JP2000248360A - Magnetron sputtering equipment - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To make it possible to effectively use electric power to be sputtered for a target, to maintain a high use efficiency of the target, and to control the thickness distribution of a thin film formed on a substrate within a predetermined range. Provided is a magnetron sputtering apparatus that can be housed inside. SOLUTION: A drive for reciprocating a magnetic field generating mechanism 7 for generating a plurality of closed racetrack-shaped high-density plasmas on the surface of a rectangular target 4 in parallel to either the long side or the short side of the target 4. The device 8 is provided. The driving device 8 reciprocates the magnetic field generating mechanism 7 at a constant speed with an amplitude equal to or smaller than the interval between the racetrack-shaped high-density plasmas generated on the surface of the target 4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetron sputtering apparatus, and more particularly to a magnetron sputtering apparatus using a rectangular target larger than the effective film forming area on a stationary rectangular substrate to obtain a uniform thickness and film quality. The present invention relates to a magnetron sputtering apparatus provided with a magnetron cathode electrode capable of forming a thin film.

[0002]

2. Description of the Related Art In recent years, there has been a demand for a device capable of forming a uniform and uniform film thickness on a large-area substrate for manufacturing a liquid crystal display device. As the film forming apparatus, a magnetron sputtering apparatus is often used.

The basic structure of a general magnetron sputtering apparatus will be described with reference to FIG.

The magnetron sputtering apparatus has a configuration in which a substrate 102 on which a film is to be formed is placed in a vacuum chamber 101, and a target 103 which is a base material of a thin film is disposed opposite the substrate 102.

[0005] The target 103 is bonded to a backing plate 104 cooled by cooling water or the like with a low melting point metal (solder) such as indium (not shown).
The backing plate 104 suppresses a temperature rise due to ion bombardment during sputtering.

[0006] A magnetic circuit 105 is provided on the back side of the backing plate 104 so as to generate a tunnel-like poloidal magnetic field on the surface of the target 103.

When a negative potential is applied from the power supply 106 to the target 103 in a state where a tunnel-like poloidal magnetic field is generated by the magnetic circuit 105, the target 10
The three surfaces are bombarded with ions in the plasma. At this time,
Since the secondary electrons emitted by the γ action are captured by the poloidal magnetic field, a closed annular (hereinafter, referred to as a racetrack) high-density plasma is formed along the tunnel-like poloidal magnetic field.

[0008] The ions in the high-density plasma are accelerated toward the target 103 by the electric field of the ion sheath generated near the surface of the target 103, collide with the target 103, and cause the substance constituting the target 103 to be removed. Splash. At this time, secondary electrons are simultaneously emitted from the surface of the target 103 by the γ action.

The particles scattered from the surface of the target 103 adhere and deposit on the surface of the substrate 102 facing the target 103 to form a thin film.

In this magnetron sputtering apparatus, local high-density plasma can be generated in the form of a race track, so that high-speed film formation and suppression of a rise in the temperature of the substrate can be achieved.

However, in the magnetron sputtering apparatus having the above-described configuration, an in-plane distribution of the thickness and film characteristics of the thin film formed on the substrate 102 occurs, reflecting that the target 103 is locally consumed.

Therefore, various techniques have been proposed for making the thickness of the thin film formed on the substrate 102 uniform and for uniformly consuming the target 103 effectively. Such a technique is roughly classified into, for example, a case where the substrate 102 on which a film is to be formed by sputtering is circular and a case where the substrate 102 is rectangular. Basically, in either technique, the target 103 is uniformly consumed by intentionally moving the magnetic circuit 105 disposed on the back surface of the backing plate 104 that holds the target 103, and is formed on the substrate 102. Attempts are being made to obtain uniformity in film thickness and film quality.

In other words, in order to make the thickness of the thin film formed on the substrate 102 uniform and to use the target 103 uniformly and effectively, the magnetic circuit 105 is formed when the substrate 102 is circular. What is necessary is just to rotate in the plane substantially parallel to the surface of the target 103, and when the board | substrate 102 is rectangular, what is necessary is just to reciprocate the magnetic circuit 105 in the plane substantially parallel to the surface of the target 103.

Here, a magnetron sputtering apparatus for forming a thin film on a substrate surface using a rectangular target larger than the effective film formation area of the substrate when the substrate on which the film is to be formed is rectangular will be described. I do. In this magnetron sputtering apparatus, a magnetic circuit as a magnetic field generating means is reciprocated in a plane substantially parallel to the target surface.

First, a magnetron sputtering apparatus in which a magnetic circuit unit serving as a magnetic field generating means is constituted by a single magnetic circuit will be described below with reference to FIGS.

FIG. 15 is a sectional view showing a main part of a film forming chamber of a magnetron sputtering apparatus disclosed in Japanese Patent Application Laid-Open No. 6-10127. FIG.
FIG. 1 is a perspective view of a main part of a film forming chamber of a magnetron sputtering apparatus disclosed in Japanese Patent Application Laid-Open No. 6-206.

In the magnetron sputtering apparatus shown in FIG. 15, a magnet unit 113 as a magnetic circuit unit composed of one magnetic circuit is provided on the back side of a backing plate 111 on which a target 112 is mounted. The magnet unit 113 is provided with a moving unit 114 for moving the magnet unit 113 along the back surface of the backing plate 111.

At this time, the magnet device 113 moves until the high-density plasma protrudes between one end and the other end of the target 112 at each end. At the time of sputtering, excitation and thermal electron supply by light irradiation are performed so that plasma is not unstable at each end of the target 112.

The magnetron sputtering apparatus shown in FIG. 16 has a magnetic field unit as a magnetic circuit unit composed of one magnetic circuit movable in the direction of the arrow on the back surface of a backing plate 215 on which a target (not shown) is attached. Although the configuration is the same as that of the magnetron sputtering apparatus shown in FIG. 15 in that the generating means 211 is disposed, a rib 215 a is provided on the surface of the backing plate 215 opposite to the target mounting surface, and mechanical interference with the rib 215 a is provided. The difference is that an escape is provided in the magnetic field generating means 211 so as not to make the gap.

Since the ribs 215a are provided on the backing plate 215, the mechanical strength can be ensured without forming the backing plate 215 thick.

When the size of the backing plate 215 is increased with the increase in the size of the substrate to be sputtered, it is necessary to increase the thickness of the backing plate 215 in order to prevent the target on the backing plate 215 from being deformed by atmospheric pressure.
By providing the ribs 215a as described above, deformation of the target due to atmospheric pressure can be suppressed without increasing the thickness of the backing plate 215.

Further, in order to suppress the deformation of the target due to the atmospheric pressure, Japanese Patent Laid-Open No. 5-132774 discloses that
A magnetron sputtering apparatus provided with a means for evacuating a space accommodating a magnetic field generating means is disclosed. In this magnetron sputtering apparatus, as shown in FIG.
Magnetic field generating means 305 and target 30
Nine surfaces are brought close to each other to obtain a strong magnetic field on the surface of the target 309.

Next, a magnetron sputtering apparatus in which a magnetic circuit unit serving as a magnetic field generating means is composed of a plurality of magnetic circuits will be described with reference to FIGS.
This will be described below with reference to (a) to (c).

FIGS. 18A to 18C and FIG. 19A
(C) is an explanatory view of a magnetron sputtering apparatus disclosed in Japanese Patent Application Laid-Open No. 6-192833.

FIG. 18A shows a set of targets 401.
FIG. 4 is a schematic cross-sectional view of a magnetron sputtering apparatus provided with a magnetic circuit unit 403 in which a plurality of magnetic circuits 403a having the same magnetic field strength are arranged for the magnetic circuit unit 403a and the backing plate 402.

FIG. 18B shows that the magnetic field strength of the magnetic circuit 413a corresponding to the both sides of the target 401 corresponds to the magnetic circuit 413 corresponding to the center of the target 401.
FIG. 5 is a schematic cross-sectional view of a magnetron sputtering apparatus provided with a magnetic circuit unit 413 configured to be stronger than the magnetic field strength in FIG.

FIG. 18C shows a magnetic circuit 423a corresponding to both sides of the target 401 having a magnetic field strength corresponding to the central portion of the target 401, similarly to the magnetron sputtering apparatus shown in FIG. 42
It is a schematic sectional drawing of the magnetron sputtering apparatus in which the magnetic circuit unit 423 comprised so that it might become stronger than the magnetic field intensity in 3b is provided.

FIG. 19A shows a plurality of magnetic circuits 433a.
, And a magnetic circuit unit 43 in which magnetic shields 434 and 435 are formed between and around each magnetic circuit 433a.
3 is a plan view of FIG.

FIG. 19B is a plan view of the rectangular target 431 eroded by the magnetic circuit unit 433 shown in FIG. 19A. Here, the target 431 is set while the magnetic circuit unit 433 is stationary.
Is eroded, and the eroded portion 431a has a race track shape. In this case, the magnetic strength of each magnetic circuit 433a of the magnetic circuit unit 433 is the same.

FIG. 19C is a cross-sectional view of the target 431 shown in FIG. 19B. In this case, since the magnetic strength of each magnetic circuit 433a in the magnetic circuit unit 433 is the same, each eroded portion 43 of the target 431 is
The depth of 1a is the same.

When the magnetic circuit unit 433 is stationary as described above, only the portion corresponding to the magnetic circuit 433a is eroded, so that the magnetic circuit unit 433 is shown in FIG. By moving the target 431 in the X and Y directions indicating the longitudinal direction of the target 431 as described above, the target 431 can be eroded almost uniformly as the eroded portion 431b indicated by the dashed line in FIG. 19C. .

FIGS. 20 (a) and 20 (b) show Japanese Patent Application Laid-Open No. 8-134.
640 shows a magnetic field generating means of the magnetron sputtering apparatus disclosed in Japanese Patent Application Publication No. 640. FIG. 7A is a perspective view of a magnetic circuit unit 501 including a single magnetic circuit 501a, and FIG. 7B is a plan view of a magnetic circuit unit 511 obtained by combining a plurality of magnetic circuits 511a.

In the magnetron sputtering apparatus disclosed in the above publication, for example, as shown in FIG. 20 (b), the magnetic circuit unit 511 is reciprocated in the directions of arrows X and Y which are the longitudinal directions of a rectangular target (not shown). When trying to keep the non-uniform wear of the film and the thickness distribution of the thin film caused thereby within a desired range, each magnetic circuit 5
It is necessary to weaken the magnetic field intensity in the region of the target surface corresponding to the magnet portion 512 constituting the outer peripheral portion of 11a.

For this reason, in the magnetic circuit unit 501 shown in FIG. 20A, the height of the magnet portion 502 constituting the outer peripheral portion of the magnetic circuit 501a is set at the center of the magnet portion 503.
By lowering it, the magnetic field intensity in the region of the target surface corresponding to the outer peripheral portion of the magnetic circuit 501a is reduced.

On the other hand, in the magnetic circuit unit 511 shown in FIG. 20B, the distance (GA, GB) between the magnet portion 512 forming the outer peripheral portion of the magnetic circuit 511a and the center magnet 513 at the center thereof is increased. Thus, the magnetic field strength in the region of the target surface corresponding to the outer peripheral portion of the magnetic circuit 511a is reduced.

FIGS. 21 (a) and 21 (b) show Japanese Patent Application Laid-Open No. 8-199.
FIG. 1 shows a side view of a magnetic field generating means of a magnetron sputtering apparatus disclosed in Japanese Patent Publication No. 354. FIG.
FIG. 4 is a sectional view of a main part including a surface perpendicular to the longitudinal direction of the magnetic circuit unit 601, and FIG.
1 is a cross-sectional view of a main part including a plane perpendicular to the lateral direction of FIG.

The magnetic circuit unit 601 has the structure shown in FIG.
As shown in FIG. 21A, a plurality of magnetic circuits 601a... Are provided, and the distance between the magnetic circuits 601a can be adjusted independently.
As shown in (b), it can be freely inclined in the long side direction.

Thus, when the magnetic circuit unit 601 as the magnetic field generating means is reciprocated to adjust the non-uniform consumption of the target 602 and the thickness distribution of the thin film caused by the non-uniform consumption to within a desired range. The non-uniformity of the thickness of the thin film due to the asymmetry of the plasma that cannot be completely removed is corrected by the reciprocation of the magnetic circuit unit 601 and the magnetic circuit 6
By tilting 01a, the asymmetry of the plasma is compensated.

FIGS. 22 (a) to 22 (c) show Japanese Patent Application Laid-Open No. 9-12 / 1997.
1 shows a magnetron sputtering apparatus disclosed in Japanese Patent No. 5242. 2A is a sectional view of a main part of a film forming chamber 700 of the magnetron sputtering apparatus, and FIG. 2B is a plan view of a magnetic field generating unit 702 of the magnetron sputtering apparatus arranged in the film forming chamber 700. c) The target 701 is adjusted by adjusting the distance between the magnetic pole surfaces of the five magnet units 703 constituting the magnetic field generating means 702 and the target 701.
FIG. 9 is a cross-sectional view showing the arrangement of each magnet unit 703 when adjusting the magnetic field intensity on the surface and, finally, adjusting the thickness distribution of the thin film formed on the substrate 704.

The magnetron sputtering apparatus having the above-described configuration includes the above-described FIGS. 18 (a) to 18 (c) and FIG.
(C) for increasing the intensity of the magnetic field generated on the target surface by the magnetic circuits at both ends of a plurality of magnetic circuit units constituting the magnetic field generating means as disclosed in JP-A-6-192833. In addition to the circuit configuration,
The target 7 is provided by the magnet unit 703 located at the center.
A configuration for increasing the intensity of a magnetic field generated on the surface and a configuration of an end of a magnet unit 703 for suppressing uneven consumption of the target 701 due to the configuration are disclosed.

[0041]

However, each of the above-described conventional configurations has the following problems.

(A) In the magnetron sputtering apparatus shown in FIGS. 15 and 16, since the magnetic field generating means is constituted by a single magnet unit, the uniformity of the thickness of the thin film formed on the substrate is reduced. In order to achieve this, it is necessary to reciprocate the magnet unit over the entire width of the target.

Further, in order to increase the film forming speed, it is necessary to increase the input power for generating plasma. However, if the input power is increased too much, the ion current density hitting the target becomes too large,
The discharge mode changes from a glow discharge that causes a sputtering action (an electron supply source that requires secondary electron emission to maintain the discharge due to the γ action) to an arc discharge (an electron supply source that requires thermionic emission to maintain the discharge). Would. That is, the input power density cannot be increased beyond a certain value.

Therefore, due to the above-mentioned adverse effects caused by the increase of the input power and the necessity of reciprocating the magnet unit over the entire width of the target, the case where a target which is considerably large relative to the width of the magnet unit is used. Cannot apply an extremely large amount of electric power to a racetrack-shaped high-density plasma obtained by a single magnet unit, and there is a limit in improving a film forming speed for the purpose of improving apparatus performance.

Furthermore, in order to make the thickness distribution of the thin film formed on the substrate uniform, the speed of the reciprocating motion of the magnet unit needs to be controlled by the relative position with respect to the target, which requires a complicated control system. I do.

(B) In the magnetron sputtering apparatus shown in FIG.
Regarding the provision of 15a, the following problem occurs when the target is bonded to the backing plate 215 with low melting point solder such as indium.

Normally, a copper-based material having good thermal conductivity is used as the material of the backing plate 215 in order to suppress a rise in target temperature due to ion bombardment of the target during sputtering. The target is bonded to the backing plate 215 with indium-based low-temperature solder, and then cooled by directly or indirectly cooling (usually water cooling) the backing plate 215.

The target is a backing plate 215
(A thin film material itself to be formed on a substrate, or a material for forming a thin film by reactive sputtering), so that there is a difference in thermal expansion to a greater or lesser degree. In this state, if the target and the backing plate 215 are bonded to each other with indium-based low-temperature solder (melting point: about 150 ° C.), warpage occurs as a whole due to a difference in thermal expansion. Attempts have been made to make the material of the backing plate 215 have thermal expansion equivalent to that of the target, while trying to eliminate warpage while sacrificing heat conduction, but this is not preferred from the viewpoint of material cost and processing cost. .

Further, in the magnetron sputtering apparatus shown in FIG. 16, the warping of the backing plate 215 due to the bonding of the target can be reduced, but the thermal stress due to the difference between the thermal history and the thermal expansion at the time of bonding is actually reduced. Since it remains as it is, a large stress is applied to the target surface. In particular, when the target is a ceramic material having a smaller thermal expansion than a copper-based material, a large tensile-side stress remains on the target surface, which is not preferable because of the mechanical strength of the target.

When a flat backing plate without ribs is used, the form in which the backing plate is flexed positively at an appropriate temperature should be maintained for a certain time when the temperature of the target is lowered in the bonding step. Thus, a process of causing plastic flow of indium solder to reduce thermal stress and reduce warpage of the entire target can also be performed. However, if the backing plate has ribs as described above, the degree of freedom in this process is reduced.

Further, the publication that discloses the magnetron sputtering apparatus shown in FIG. 16 only discloses that the weight of the backing plate 215 is reduced for the purpose of reducing the thickness thereof. There is no description.

(C) In the magnetron sputtering apparatus shown in FIG. 17, the pressure in the space accommodating the magnetic field generating means 305 is not specified, and the outer wall of the space accommodating the magnetic field generating means, the magnetic field generating means 305 or Since the potential of the magnetic field generating means driving mechanism is not specified, if the space accommodating the magnetic field generating means is evacuated simply to reduce the pressure difference from the atmospheric pressure, the geometrical arrangement in that space Depending on the potential of each component, electric discharge occurs between the backing plate 304 and the magnetic field generating means 305 or the magnetic field generating means moving mechanism, etc., so that not only power supplied for sputtering is lost, but also a failure in the mechanism. Induces.

Here, "just" means the magnetic field generating means 3
When exhausting the space accommodating the backing plate 05, the degree of exhausting is used in consideration of only the deformation of the backing plate 304 due to the pressure difference from the atmospheric pressure. Therefore, as an exhaust pump for exhausting the space accommodating the magnetic field generating means 305, an oil rotary pump or a pump capable of exhausting to about several Pa, such as a combination of an oil rotary pump and a mechanical booster pump, is used. Such a pump is preferably selected also from the viewpoint of equipment cost and maintenance.

However, when these pumps are used as the exhaust pump, the space for accommodating the magnetic field generating means 305 has a pressure of only about several Pa, and the potential of the magnetic field generating means 305 and the driving mechanism of the magnetic field generating means are set to the target. 3
09 and the backing plate 304, for example, if grounded, the backing plate 30 to which the target 309 is bonded for sputtering.
When a high voltage is applied to No. 4, unnecessary discharge occurs not only on the surface of the target 309 as described above.

In order to avoid this, when the space accommodating the magnetic field generating means is evacuated, the ultimate pressure is set to 10 ^-3.
Use of a turbo molecular pump or a cryopump that is lower than about Pa is disadvantageous in terms of cost.

(D) FIGS. 18 (a) to 18 (c) to FIG.
In the magnetron sputtering apparatus shown in (a) to (c), the effects obtained by each specific means can be expected to be those disclosed in the respective gazettes. However, there is still a problem for the purpose of "suppressing uneven consumption of the target" in the dimensions of the plurality of magnet units constituting the magnetic field generating means and the amplitude of the reciprocating motion of the magnetic field generating means.

FIGS. 18 (a) to 18 (c) and FIG. 19 (a)
In the magnetron sputtering apparatus disclosed in JP-A-6-192833 described in (c), the amplitude of the reciprocating motion of the magnetic field generating means is substantially equal to the width of one magnetic circuit unit 403 in the short side direction. The reciprocating motion changes the speed in a sinusoidal manner.

At this time, when the magnetic circuit unit 403 shown in FIGS. 18A to 18C is stopped, the target 401 is in an eroded state as shown in FIG. 23A, for example. In the figure, a portion where the concave portion is eroded is shown.

The erosion state when the magnetic circuit unit 403 is reciprocated is as shown in FIGS. Here, P1 in FIGS.
To P4 indicate the amplitude when the magnetic circuit unit 403 reciprocates, and indicates that the amplitude gradually increases. Then, when the amplitude shown in FIG. 23E is P4, the state is substantially equal to the width of one magnetic circuit 403a of the magnetic circuit unit 403 in the short side direction. That is, the target 401 is not uniformly eroded, and a portion where the erosion progresses and a portion where the erosion does not progress much are distributed in the form of vertical stripes.

Therefore, the utilization efficiency of the target 401 is determined by the portion where erosion progresses most. Further, in this state, the thickness distribution of the thin film formed on the substrate also becomes a vertical stripe distribution reflecting the erosion state of the target 401.

(E) In the magnetron sputtering apparatus disclosed in JP-A-8-134640 described with reference to FIGS. 20A and 20B, the amplitude of the reciprocating motion of the magnetic circuit unit 511 is shorter than that of one magnetic circuit 511a. It is set to be equal to about half of the width in the side direction. The speed of the reciprocating motion of the magnetic circuit unit 511 is changed in a sine wave shape.

The above publication does not disclose the target erosion state obtained when the magnetic circuit unit 511 is stopped, so that the target erosion state when the magnetic circuit unit 511 is reciprocated and discharged is not necessarily clear. However, since the size of the single magnetic circuit 511a and the average pitch of each magnetic circuit 511a are not specified, the target erosion does not always progress uniformly. Furthermore, there is a difference in the time during which the target is exposed to the high-density plasma because the reciprocating motion has a sinusoidal speed change, and the target erosion easily proceeds at both ends of the amplitude of the reciprocating motion.

The distribution of the erosion state of the target in the above publication is, for example, a vertical stripe distribution as shown in FIG. This has similar problems, albeit to different degrees, with respect to the target utilization efficiency and the thickness distribution of the thin film formed on the substrate described above.

(F) In the magnetron sputtering apparatus disclosed in JP-A-8-199354 described with reference to FIGS. 21 (a) and 21 (b), the amplitude and speed change of the reciprocating motion of the magnetic circuit unit 601 are not described. . In this publication, in addition to a mechanism for reciprocating the magnetic circuit unit 601 itself in which a plurality of magnetic circuits 601a are integrated, a mechanism for adjusting the interval between the plurality of magnetic circuits 601a, a magnetic circuit 601a and a backing plate ( (A target surface). In particular, the latter has a configuration in which the distance between the magnetic circuit unit 601 and the backing plate (target surface), that is, the degree of inclination, can be changed in the long side direction of each magnetic circuit 601a.

However, the magnetron sputtering apparatus disclosed in the above publication merely shows one specific example of a means for adjusting the thickness distribution of the thin film formed on the substrate, and the apparatus configuration becomes complicated and the cost increases. Not only
Since the number of movable parts increases, it becomes difficult to secure the reliability of the apparatus itself.

Further, the magnetic circuit unit 601 is used most of the time at a position separated from the position closest to the backing plate (target surface), so that the performance of the magnetic circuit unit 601 can be sufficiently exhibited. Absent.

(G) In the magnetron sputtering apparatus disclosed in JP-A-6-192833 described with reference to FIGS. 22A to 22C, the amplitude of the reciprocating motion of the magnetic field generating means 702 is equal to that of one magnet unit 703. Although it is assumed that the width is equal to about half of the width in the short side direction, the arrangement pitch of the magnet units 703 is not described as in JP-A-8-134640. Further, the speed of the reciprocating motion of the magnetic field generating means 702 is also sinusoidal in the disclosed example.

Therefore, the erosion of the target 701 does not always proceed uniformly, and the magnetic field generating means 7
There is a difference in the time during which the target is exposed to the high-density plasma by the amount of the reciprocating motion of 02 having a sinusoidal velocity change,
Target erosion easily progresses at both ends of the amplitude of the reciprocating motion.

The present invention has been made in view of the above-mentioned problems, and has as its object to have a simple mechanism composed of cost-effective parts and to effectively target the supplied electric power. It is an object of the present invention to provide a magnetron sputtering apparatus which can be used for sputtering, can keep the target use efficiency high, and can keep the thickness distribution of a thin film formed on a substrate within a predetermined range.

[0070]

According to a first aspect of the present invention, there is provided a magnetron sputtering apparatus which is disposed opposite to a rectangular substrate on which a thin film is formed in a vacuum chamber, and wherein the substrate is effectively formed. A rectangular target having a larger area, a plasma generating means for generating a plurality of closed racetrack-like high-density plasmas on the surface of the target by performing a magnetron discharge on the target, and the plasma generating means Driving means for reciprocating the target in parallel with either the long side or the short side of the target, wherein the plasma generating means includes a moving direction of the plasma generating means on a surface of the target. Along the distance between the racetrack-shaped high-density plasma linear regions in the longitudinal direction and the adjacent racetrack-shaped high-density The racetrack-shaped high-density plasma is generated so that the interval in the long axis direction linear region of the plasma is substantially equal, and the driving means generates an amplitude having a size equal to or less than the interval between the generated racetrack-shaped high-density plasmas. In this method, the plasma generating means is reciprocated at a constant speed.

According to the above configuration, the plasma generating means is provided on the surface of the target along the moving direction of the plasma generating means with the distance between the racetrack-shaped high-density plasmas in the long-axis direction linear region. The racetrack-like high-density plasma is generated such that the intervals between adjacent racetrack-like high-density plasmas in the long-axis linear region are substantially equal. As a result, the power supplied for plasma generation is dispersed into a plurality of plasmas, so that the power density can be suppressed, and large power can be supplied without abnormal discharge such as arc discharge. It is possible to increase the film forming speed as the performance of the above.

Further, since the driving means reciprocates the plasma generating means at a constant speed with an amplitude not larger than the interval between the generated high-density plasmas of the racetracks, the individual racetracks can be moved. The target surface portions eroded by the high-density plasma do not overlap, and the erosion of the target locally can be prevented from progressing.

Therefore, according to the magnetron sputtering apparatus having the above-described structure, the magnetron sputtering apparatus has a simple mechanism composed of cost-effective parts, and can effectively use the supplied electric power for sputtering the target. The utilization efficiency of the target can be kept high, and the thickness distribution of the thin film formed on the substrate can be kept within a predetermined range.

The magnetron sputtering apparatus of claim 2 is
In order to solve the above problem, in addition to the configuration of claim 1, the interval between the racetrack-shaped high-density plasmas is a distance between the highest density portions of the racetrack-shaped high-density plasma. And

According to the above configuration, in addition to the effect of the first aspect, the interval between the racetrack-shaped high-density plasmas is the distance between the highest-density portions of the racetrack-shaped high-density plasma. The amplitude when the composite magnetic circuit is reciprocated at a constant speed in the direction in which the magnetic units are arranged can be set smaller than the distance between the highest-density portions of the racetrack-shaped high-density plasma. As a result, the target surface portions eroded by the individual racetrack-shaped high-density plasmas do not overlap, and the erosion of the target does not proceed locally.

The magnetron sputtering apparatus of claim 3 is
In order to solve the above-mentioned problems, a rectangular target is disposed opposite to a rectangular substrate on which a thin film is formed in a first vacuum chamber, and the rectangular target is disposed on a back side of a backing plate supporting the target. Magnetic field generating means for generating a magnetic field on the surface of the target facing the substrate, and driving means for reciprocating the magnetic field generating means with respect to the target in parallel with either the long side or the short side of the target. The magnetic field generating means comprises a composite magnetic circuit in which a plurality of rectangular magnet units for generating a magnetic field on the target surface are arranged such that their long sides are adjacent to each other and have the same polarity, The driving means may include a line connecting a point at which a component perpendicular to the target surface of the magnetic field generated on the target surface becomes zero, and a long side of the magnet unit. The composite magnetic circuit is moved so that the amplitude SW when the composite magnetic circuit is reciprocated at a constant speed in the direction in which the magnetic units are arranged with respect to the pitch P of the line is such that SW ≦ P is satisfied. It is characterized by:

According to the above arrangement, the magnetic field generation means arranges a plurality of rectangular magnet units for generating a magnetic field on the target surface such that the long sides are adjacent to each other and have the same polarity. With such a composite magnetic circuit, a plurality of closed racetrack-shaped high-density plasmas converged by the generated magnetic field can be obtained on the surface of a target using these composite magnetic circuits as a source.

As a result, the power supplied for plasma generation is dispersed to a plurality of plasmas, so that the power density can be suppressed, and large power can be supplied without abnormal discharge such as arc discharge. As a result, it is possible to increase the film forming speed as the performance of the apparatus.

Further, the driving means may include a line parallel to the long side of the magnet unit among the lines connecting the points at which the component perpendicular to the target surface of the magnetic field generated on the target surface by the composite magnetic circuit becomes zero. With respect to the pitch P, the amplitude SW when the composite magnetic circuit is reciprocated at a constant speed in the direction in which the respective magnetic units are arranged is set so that the relationship of SW ≦ P is satisfied, so that the individual racetracks are set. The target surface portions eroded by the high-density plasma do not overlap, and the erosion of the target does not proceed locally.

The magnetron sputtering apparatus of claim 4 is
In order to solve the above problem, in addition to the configuration of claim 3, the magnet unit has a center magnet disposed at the center of the unit, and has a polarity surrounding the center magnet and opposite to the center magnet. Of the magnetic field generated on the target surface by the central magnet and the peripheral magnet, the line connecting the points at which the component perpendicular to the target surface becomes zero. The pitch P of a portion parallel to the long side of the magnet unit is P> MW /
2 is formed.

According to the above construction, in addition to the function of the third aspect, the magnet unit has a center magnet disposed at the center of the unit and a polarity surrounding the center magnet and opposite to the center magnet. Of the magnetic field generated on the target surface by the central magnet and the peripheral magnet, the line connecting the points at which the component perpendicular to the target surface becomes zero. The pitch P of a portion parallel to the long side of the magnet unit is P> MW / 2 with respect to the dimension MW in the short side direction of the magnet unit.
With such a configuration, the pitch of the racetrack-like high-density plasma formed by a single magnet unit is also larger than MW / 2.

Therefore, the gap between the magnet units is adjusted so that the distance from the race track-like high-density plasma generated in the adjacent magnet unit is equal to the pitch interval of the high-density plasma generated in each magnet unit. Can be arranged.

A magnetron sputtering apparatus according to claim 5 is
In order to solve the above problem, in addition to the configuration of claim 3 or 4, the composite magnetic circuit includes n (n> 1) magnet units, and a distance between the magnet units is set to be equal to each magnet unit. Is set equal to the pitch P of the generated magnetic field, and when the size of the target in the magnet unit arrangement direction is TW, P = TW /
It is characterized in that it is set to be (2 × n + 1).

According to the above configuration, in addition to the function of the third or fourth aspect, the composite magnetic circuit is composed of n (n> 1) magnet units, and the distance between each magnet unit is set to be equal to that of each magnet unit. Is set equal to the pitch P of the generated magnetic field, and when the size of the target in the magnet unit arrangement direction is TW, P = TW /
By setting to be (2 × n + 1), the target can be eroded at the pitch P interval.

The magnetron sputtering apparatus according to claim 6 is
In order to solve the above problem, in addition to the configuration according to any one of claims 3 to 5, the magnetic field generating means is disposed in a second vacuum chamber provided on a surface of the target opposite to the substrate facing surface. It is characterized by being.

According to the above configuration, in addition to the function of any one of claims 3 to 5, the magnetic field generating means is disposed in the second vacuum chamber provided on the opposite side of the target from the substrate facing surface. The backing plate to which the target is bonded in the operation state of the apparatus is connected to the first vacuum chamber (film-forming space side) on the target side and the second vacuum chamber on the back side thereof.
Both surfaces of the vacuum chamber (composite magnetic circuit side) are evacuated.

As a result, there is no pressure difference on both sides of the backing plate to which the target is bonded, which substantially affects the mechanical structure. Therefore, the backing plate is necessary for bonding to the target and attaching to the apparatus. A thickness having mechanical strength may be sufficient, and the thickness can be made thinner than a case where it has strength enough to withstand atmospheric pressure.

The magnetron sputtering apparatus according to claim 7 is
In order to solve the above problem, in addition to the configuration of claim 6, a magnetic field generating means disposed in the second vacuum chamber, a driving means for driving the magnetic field generating means, and the second vacuum chamber itself , And the target and the backing plate supporting the target are set to the same potential.

According to the above arrangement, in addition to the function of claim 6, the magnetic field generating means disposed in the second vacuum chamber, the driving means for driving the magnetic field generating means, and the second vacuum chamber itself are By being set to the same potential as the target and the backing plate supporting the target,
Even if the exhaust of the second vacuum chamber provided on the back surface of the target in which the magnetic field generating means is housed is about the so-called "roughing" like an oil rotary pump or a combination of an oil rotary pump and a mechanical booster pump, the target is bonded. When a magnetron discharge for sputtering is generated by applying a high voltage to the backing plate thus formed, the backing plate and the second vacuum chamber provided on the back surface of the target in which the magnetic field generating means are accommodated, or the contents thereof. Does not discharge.

Therefore, since the pump for evacuating the second vacuum chamber can be replaced by the roughing pump as described above, an expensive pump for evacuating to a high vacuum and various valves for operating the pump are included. Since no exhaust system is required, the cost of the apparatus can be reduced.

The magnetron sputtering apparatus of claim 8 is
In order to solve the above-mentioned problem, in addition to the configuration of any one of claims 3 to 7, the composite magnetic circuit has a magnetic field in which both ends in the arrangement direction of the magnet units on the substrate facing surface of the target have a magnetic field with respect to the center. It is characterized in that both ends in a direction orthogonal to the direction in which the magnet units are arranged are adjusted so that the magnetic field is weaker than the central part.

According to the above arrangement, in addition to the function of any one of claims 3 to 7, the composite magnetic circuit has a magnetic field in which both ends in the arrangement direction of the magnet units on the substrate facing surface of the target have a magnetic field with respect to the center. Strong, both ends in the direction perpendicular to the direction in which the magnet units are arranged are adjusted so that the magnetic field is weaker than the center, so that the target is uniformly eroded,
The film thickness distribution on the substrate can be corrected.

Therefore, when the magnet unit is assembled in the composite magnetic circuit, the magnetic field is adjusted so that the magnetic field becomes stronger at the both ends of the target surface in the arrangement direction of the magnet unit with respect to the central portion, so that the magnet unit extends along the long side of the target. It is possible to increase the plasma density of the portion and correct the film thickness distribution in the direction in which the magnetic field generating means reciprocates (the direction of the short side of the target).

Further, by weakening the magnetic field at the ends perpendicular to the magnet units in the direction perpendicular to the center, the high-density plasma at the long-side ends (peripheral portions along the target short sides) of the rectangular magnet units is reduced. It is possible to reduce the density, adjust the target erosion progress rate based on the difference in plasma residence time on the target surface when the magnetic field generating means reciprocates, and correct the film thickness distribution.

The magnetron sputtering apparatus of claim 9 is
In order to solve the above problem, in addition to the configuration of claim 8, the magnet unit includes a magnet assembly in which a center magnet and a peripheral magnet are bonded and fixed to a magnet assembly yoke, and an entire base of the magnet unit. The magnet assembly is fastened to the base yoke by bolts using fastening holes provided in the magnet assembly yoke, and the diameter of the fastening hole is larger than the diameter of the bolt. Is also formed to be large.

According to the above construction, in addition to the function of claim 8, the magnet unit comprises a magnet assembly in which a center magnet and a peripheral magnet are bonded and fixed to a magnet assembly yoke, and an entire base of the magnet unit. The magnet assembly is fastened to the base yoke with bolts using fastening holes provided in the magnet assembly yoke, so that the target surface of the magnetic field generated by the magnet unit is The above intensity distribution adjustment can be realized by bolting with the auxiliary yoke inserted between the magnet assembly and the base yoke.

According to a tenth aspect of the present invention, in order to solve the above problem, in addition to the configuration of the ninth aspect, a fastening hole of the magnet assembly yoke fastens the magnet assembly and the base yoke. In this case, the position of the magnet assembly is formed in a long hole so as to be adjustable on the base yoke in the driving direction of the magnetic field generating means.

According to the above construction, in addition to the function of the ninth aspect, when the magnet assembly and the base yoke are fastened to each other, the fastening hole of the magnet assembly yoke is positioned above the base yoke. Is formed in an elongated hole so that it can be adjusted in the driving direction of the magnetic field generating means, so that when a plurality of magnet units are combined, a portion of the race track-shaped high-density plasma that is parallel to the long side direction of the magnet unit is combined. Fine adjustment can be made so that the pitches in the rectangular short side direction become equal.

In order to solve the above-mentioned problem, the magnetron sputtering apparatus according to claim 11 is used in claim 9 or claim 10.
In addition to the above configuration, at least one of the magnet assembly yoke and the base yoke is characterized in that a longitudinal end portion of the magnet unit is formed thinner than other portions.

According to the above construction, the present invention is characterized in that:
In addition to the operation described above, at least one of the magnet assembly yoke and the base yoke is formed so that the longitudinal end of the magnet unit is formed thinner than the other parts, so that the magnetic field at the longitudinal end of the magnet unit is in the center. It can be adjusted to be particularly weak.

The magnetron sputtering apparatus according to claim 12 is for solving the above-mentioned problems.
In addition to the above configuration, the magnet assembly yoke and the base yoke are made of a conductive soft magnetic material, and the center magnet and the peripheral magnet are made of a conductive magnet material or a conductive material on the surface. The magnet assembly is made of a coated magnet material, and is characterized in that the center magnet and the peripheral magnet are fixed to the magnet assembly yoke with a conductive adhesive.

According to the above configuration, in addition to the function of any one of the ninth and eleventh aspects, the magnet assembly yoke and the base yoke are made of a conductive soft magnetic material, Is made of a conductive magnet material or a magnet material having a surface coated with a conductive material, and the magnet assembly has a center magnet and a peripheral magnet fixed to a magnet assembly yoke with a conductive adhesive. Thus, the magnetic field generating means is supported by a conductive substance, and the necessary electric connection is made, so that the same potential can be obtained up to the magnet surface of the composite magnetic circuit.

[0103]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described.
The following is a description based on FIG. 1 to FIG.

As shown in FIG. 1, the magnetron sputtering apparatus according to the present embodiment has a film forming chamber 1 forming a first vacuum chamber and a magnet forming a second vacuum chamber adjacent to the film forming chamber 1. A room 2 is provided.

In the film forming chamber 1, a substrate 3 on which a thin film is formed on the surface and a target 4 facing the substrate 3 and serving as a base material of the thin film formed on the surface of the substrate 3 are arranged. Have been.

The substrate 3 is mounted on a substrate holder 5 provided in the film forming chamber 1 on a surface opposite to a film forming surface. still,
The mounting of the substrate 3 on the substrate holder 5 is appropriately selected, for example, when it is performed in the film forming chamber 1, when it is performed in a vacuum chamber (not shown) in the previous stage, or when it is performed in the atmosphere. Shall be.

The target 4 is arranged at the boundary between the film forming chamber 1 and the magnet chamber 2 and forms the bottom of the film forming chamber 1. The target 4 is connected to a backing plate 6 constituting the upper surface of the magnet chamber 2 on the side opposite to the surface facing the substrate 3 by a low melting point metal (not shown) such as solder or indium.

The backing plate 6 has a mechanism to be cooled by cooling water or the like, so that the temperature of the connected target 4 is prevented from rising during sputtering.

A magnetic field generating mechanism 7 as a magnetic field generating means for generating a tunnel-like poloidal magnetic field on the surface of the target 4 connected to the backing plate 6 is provided in the magnet chamber 2. . In addition,
The detailed configuration of the magnetic field generation mechanism 7 will be described later.

Further, a driving device 8 for reciprocating the magnetic field generating mechanism 7 in the directions of arrows A and B at a constant speed is provided in the magnet chamber 2.

Since the film forming chamber 1 constitutes the first vacuum chamber as described above, the film forming chamber 1 is formed outside the film forming chamber 1 (in the direction of the arrow) through an exhaust duct 9 by an exhaust pump (not shown). A mechanism for exhausting gas in the film forming chamber 1 and a mechanism for introducing gas into the film forming chamber 1 from a gas supply source (not shown) outside the film forming chamber 1 through a gas pipe 10 are provided. By these mechanisms, at the time of film formation, the inside of the film formation chamber
The pressure is set to about 1 Pa.

The magnet chamber 2 has a mechanism for exhausting gas to the outside of the magnet chamber 2 (arrows in the drawing) through an exhaust duct 11 by an exhaust pump (not shown). With this mechanism, the inside of the magnet chamber 2 is also
It is continuously evacuated and set at a pressure of about 0.01 to 1 Pa.

Since the pressure in the film forming chamber 1 and the magnet chamber 2 may be set to about 0.01 to 1 Pa as described above, a mechanical booster pump is used as an exhaust pump.

For example, the pressure in the film forming chamber 1 is set at a pressure of about 0.05 to 1 Pa during film formation (at the time of gas introduction), and 10 ^-5 to 10 ^-4 Pa without gas introduction. Pressure is set to about

The magnet chamber 2 has an atmospheric pressure of 1
Because it is about 0 ⁵ Pa, there is no problem at a pressure of about 100Pa in order to prevent warping of the target 4.

In the magnetron sputtering apparatus having the above configuration, the magnet chamber 2, the driving device 8, the magnetic field generating mechanism 7, and the backing plate 6 are electrically connected to each other so as to have the same electric potential. Since the chamber 1 is grounded, the magnet chamber 2 is fixed to the film forming chamber 1 via insulating materials 12 so as not to be electrically short-circuited.

Further, the above-mentioned exhaust duct 11 is connected to the magnet chamber 2 via an insulating flange 13.

Further, on both sides of the film forming chamber 1, valves 14 for connecting with other mechanisms (not shown) adjacent to the film forming chamber 1 are provided. Here, the other mechanism is, for example, another film forming chamber, a load lock chamber, or a mechanism in the atmosphere. Therefore, the film forming chamber 1 and the film forming chamber 1
Opening and closing the valve 14 makes it possible to set the same atmosphere or a different atmosphere between another mechanism and the other mechanism connected by the valve 14.

Further, a mask 15 for preventing the sputtered thin film from adhering at the time of sputtering is provided on the peripheral portion of the substrate 3.

Further, a ground shield 16 is provided on the periphery of the target 4 to prevent a mechanism around the target 4 from being exposed to plasma during sputtering.

A power supply 17 for applying a negative potential is connected to the backing plate 6.

Therefore, the magnetic field generating mechanism 7, the backing plate 6 and the power supply 17 constitute a plasma generating means for generating a high-density plasma on the surface of the target 4.

Here, the magnetic field generating mechanism 7 provided in the magnetron sputtering apparatus will be described in detail.

First, the configuration of the magnetic field generating mechanism 7 will be briefly described.

As shown in FIG. 1, the magnetic field generating mechanism 7 has a composite magnetic circuit structure in which a plurality of magnet units 30 are arranged on a substantially flat support member 7a parallel to the target 4. Has become. The support member 7a is fixed to a driving device 8, and the driving device 8 causes the arrow A
・ It moves in the B direction. The magnet unit 30 is used as a magnetron cathode electrode in the present magnetron sputtering device.

In other words, the magnetic field generating mechanism 7 has a function as plasma converging means for converging plasma on the surface of the target 4 during film formation.

Each of the magnet units 30 has a rectangular shape whose longitudinal direction is perpendicular to the moving direction of the magnetic field generating mechanism 7, and is disposed on the support member 7a at substantially equal intervals. I have.

Next, a magnetron discharge utilizing the magnet unit 30 will be described below with reference to FIGS. 2 (a) to 2 (d) show only necessary members for convenience of explanation.

The magnet unit 30 has a rectangular shape.
As shown in FIG. 2A, a center magnet 31, a peripheral magnet 32 formed in a substantially mouth shape around the center magnet 31, and a yoke 33 for fixing the center magnet 31 and the peripheral magnet 32. It is composed of The center magnet 31 and the peripheral magnet 32 are fixed with magnetic poles of opposite polarities facing the yoke 33. Here, the center magnet 31 is N
The pole and the peripheral magnet 32 are in a state where the S pole is in contact with the yoke 33.

In the magnet unit 30, the center magnet 3
1. A magnetic circuit is configured by the peripheral magnet 32 and the yoke 33, and a poloidal magnetic field is generated in a space above the magnet unit 30. That is, in the magnet unit 30, as shown in FIG. 2B, the lines of magnetic force 34 generate a poloidal magnetic field from the peripheral magnet 32 to the center magnet 31.

The magnetic lines of force 3 in the magnet unit 30
The shape and strength of 4 are determined by the dimensions and magnetic characteristics of the center magnet 31, the peripheral magnet 32, and the yoke 33. In addition, yoke 3
3 has such a size as not to cause magnetic saturation.

In the magnetron sputtering apparatus having the above-described configuration, as shown in FIG. 2C, the target 4 bonded to the backing plate 6 is disposed on the magnetic pole surface of the magnet unit 30 opposite to the yoke 33. . Here, if the backing plate 6 is made of a non-ferromagnetic material such as copper and the target 4 is also made of a non-ferromagnetic material, the magnet unit 30 maintains the shape of the magnetic field lines 34 generated. A magnetic field is generated on the surface of the target 4.

In the magnet unit 30, as shown in FIG. 2D, magnetic lines of force 34 are formed not only in the longitudinal direction but also in the lateral direction on the surface of the target 4. And
The magnetic field distribution by the magnetic field lines 34 at this time is called a “tunnel-like magnetic field” or a “tunnel-like poloidal magnetic field” because of its shape. That is, the magnet unit 30 generates a tunnel-shaped magnetic field on the surface of the target 4.

Here, the sputtering in the magnetron sputtering apparatus will be described below. In addition,
Here, a case where the target 4 is not a ferromagnetic material will be described.

First, as shown in FIG. 2D, in a state where a tunnel-shaped magnetic field is formed on the surface of the target 4, the surface side of the target 4 is evacuated and an inert gas such as Ar is introduced. At a pressure of about 10 ^-2 to 10 ^-1 Pa.

Next, as shown in FIG. 2C, a negative voltage is applied from the power supply 17 to the backing plate 6 to which the target 4 is bonded, and an electric field 35 is applied to the surface of the target 4 to cause glow discharge.

At this time, the surface of the target 4 is bombarded with ions in the plasma, and the secondary electrons emitted by the γ action of the bombardment of the ions are captured by the tunnel-like magnetic field.
Then, on the surface of the target 4, an elongated annular shape (hereinafter, referred to as a race track shape) along a tunnel-like magnetic field.
Is formed.

Subsequently, the ions in the plasma are accelerated toward the target 4 by the electric field of the ion sheath generated near the surface of the target 4 and collide with the target 4 to disperse the substance constituting the target 4. At this time, secondary electrons are simultaneously emitted from the target surface by the γ action. Particles scattered from the surface of the target 4 adhere to and deposit on the substrate 3 facing the target 4 to form a thin film.

The high density plasma 36 in the form of a race track has the highest density at a position where the magnetic field is parallel to the surface of the target 4, that is, at a position where the magnetic field component perpendicular to the target 4 is zero. Then, at this position, the erosion due to the sputtering action of the target 4 proceeds fastest. Therefore, an erosion area 37 in the form of a race track along the high-density plasma 36 is generated on the target 4 as shown in FIG.

In the magnet unit 30 used in the magnetron sputtering apparatus according to the present invention, the distance between the erosion areas 37 in the form of the race track in the short direction of the magnet unit 30 is １ ／ or more of the dimension MW in the short side direction of the magnet unit 30. The dimensions of the center magnet 31 and the peripheral magnet 32 are determined so as to be as follows.

As described in the related art, if the sputtering is continued while the single rectangular magnet unit 30 is stationary with respect to the target 4, the fact that the target 4 is locally consumed is reflected. As a result, distribution of the thickness and film characteristics of the formed thin film in the plane of the substrate 3 occurs. Therefore, the thickness of the thin film formed on the substrate 3 can be made uniform,
Must be uniformly consumed and used effectively.

The magnetic field generating mechanism 7 is shown in FIGS.
As shown in FIG. 5, a plurality of racetrack-shaped high-density plasmas 36 are generated on the surface of the target 4. Here, the magnetic field generating mechanism 7 includes seven magnet units 3
Since it is made of zero, seven high-density plasmas 36 are formed on the surface of the target 4.

Each of the magnet units 30 has a center magnet 31 and a peripheral magnet 31 so that the distance between the erosion areas 37 in the form of a race track is at least の of the lateral dimension MW of the magnet unit 30 as described above. Since the dimensions of 32 are determined, the magnet units 30 are arranged in such a manner that their long sides are adjacent to each other while maintaining a clearance C between the respective magnet units 30, and a race track shape formed by each of the adjacent magnet units 30 is formed. The interval where the erosion of the target 4 progresses most by the high-density plasma 36, that is, the interval between the portions where the plasma density is the highest, can be made equal to the interval in the short direction of the magnet unit 30 in the erosion region 37. In the following description, the magnet unit 30 in the erosion area 37 will be described.
Is defined as a pitch P.

In the state shown in FIG.
Is stopped and the magnetron discharge is continued, the target 4 is eroded in a state in which a plurality of erosion regions 37 (FIG. 2D) in the form of race tracks formed by the high-density plasma 36 are arranged at equal pitches P. .

However, in the magnetron sputtering apparatus having the above-described structure, the driving device 8 for reciprocating the magnetic field generating mechanism 7 in the lateral direction of the magnet unit 30 in a plane parallel to the target 4 is provided. Therefore, this driving device 8
To reciprocate the magnetic field generating mechanism 7 at a constant speed, and set the amplitude SW thereof equal to or smaller than the pitch P of the high-density plasma 36. As a result, the time during which the entire surface of the target 4 is exposed to the racetrack-shaped high-density plasma 36 is averaged, so that the erosion progress of the entire surface of the target 4 can be made uniform.

At this time, the dimension TW (dimension in the lateral direction) of the target 4 in the direction in which the magnetic field generating mechanism 7 reciprocates is at least the number n of the magnet units 30 (n = 7 in the present embodiment).
Must be greater than twice the pitch P. Actually, the portion where the erosion of the target 4 proceeds has a finite width, but even if the magnet unit 30 is stopped and the magnetron discharge is continued, it does not extend beyond the width of the magnet unit 30 itself. And the magnet unit 3
The dimensions of the zero center magnet 31 and the peripheral magnet 32 are determined.

In the magnet unit 30 of the present invention, the pitch P
Are determined so that they are equal to or more than の of the short-side dimension MW of the magnet unit 30. Therefore, the dimension TW of the target 4 is set such that TW = P (2n + 1). Is determined, the target 4 can be used effectively without enlarging a portion that is not eroded at the end in the reciprocating movement direction.

Further, details of the configuration of the magnetic field generating mechanism 7 will be described below with reference to FIGS. 4 (a) and 4 (b) and FIGS. 5 (a) and 5 (b).

FIG. 4A is a plan view of the magnetic field generating mechanism 7, and FIG. 4B is a side view of the magnetic field generating mechanism 7 of FIG. 5A is an enlarged view of a main part 40 of FIG. 4A, and FIG. 5B is a side view of FIG.

The magnetic field generating mechanism 7 has a configuration in which seven magnet units 30 are arranged as shown in FIG. As shown in FIG. 4 (b), each of the magnet units 30 is such that the height of the center magnet 31 and the peripheral magnet 32 at the longitudinal end side of the magnet unit 30 from the supporting member 7a is other than the center magnet 31. And it is formed so as to be smaller than the peripheral magnet 32.

The center magnet 31 and the peripheral magnet 32 are
It is divided into multiple blocks. For example, the center magnet 31
In the figure, only one block at the longitudinal end of the magnet unit 30 is used as the center magnet 31b, and the other blocks are used as the center magnet 31a.
And for convenience. On the other hand, the peripheral magnet 32 is configured such that, at the longitudinal end of the magnet unit 30, one block on the long side is the peripheral magnet 32 b and the block on the short side is the peripheral magnet 32 b.
It is distinguished from c for convenience.

Therefore, in the magnet unit 30,
The thickness of the portion composed of the center magnet 31a, the peripheral magnet 32b, and the peripheral magnet 32c on the end side in the longitudinal direction is such that the central magnet 3
It is formed so as to be thinner than the thickness of the portion constituted by 1b and the peripheral magnet 32a. This detailed configuration will be described later.

Further, as shown in FIG. 5B, the yoke 33 to which the center magnet 31 and the peripheral magnet 32 are attached has a base yoke 41 and a magnet assembly yoke 42 for the center magnet for attaching the center magnet 31 to. And a magnet assembly yoke 43 for the peripheral magnet for attaching the peripheral magnet 32.

The center magnet 31 is adhered and fixed to the center magnet magnet yoke 42 and the center magnet magnet assembly 4 is fixed.
The peripheral magnet 32 is bonded and fixed to a peripheral magnet magnet assembly yoke 43 so as to form a peripheral magnet magnet assembly 4.
5.

The peripheral magnet magnet assembly 45 has a fastening hole 47 for fastening to the base yoke 41 with a bolt 46. That is, the magnet assembly 45 for the peripheral magnet is
And fixed. In addition, the magnet assembly 44 for the center magnet is used.
Although not shown, they are similarly fastened and fixed from the back side of the base yoke 41 by bolts.

The fastening hole 47 of the magnet assembly 45 for the peripheral magnet is larger than the diameter of the bolt 46, and the fixing position when the magnet assembly 45 for the peripheral magnet is fixed to the base yoke 41 by the bolt 46. Is formed in a long hole shape so that the fine adjustment can be made. That is, when a plurality of magnet units 30 are combined, fine adjustment is performed so that the pitches P of the race track-shaped high-density plasma 36 in the rectangular short direction parallel to the longitudinal direction of the magnet units 30 are equal to each other. Can be.

Further, the center magnet 31 and the peripheral magnet 32 are made of a conductive magnet material or a conductive surface coating (not shown).
The center magnet 31 and the surrounding magnet assembly 45 are provided with the center magnet 31 and the surrounding magnet 32. The center magnet 31 and the surrounding magnet 32 are the center magnet assembling yoke 42 and the surrounding magnet assembly. The yoke 43 is fixed with a conductive adhesive (not shown). Thus, the surfaces of the center magnet 31 and the peripheral magnet 32 can be electrically set to the same potential as the center magnet magnet assembly 44 and the peripheral magnet magnet assembly 45. Therefore, the backing plate on which the target 4 is bonded to the magnet unit 30 is provided. 6 and the same potential.

Further, the base yoke 41, the magnet assembly 44 for the center magnet and the magnet assembly 45 for the peripheral magnet
Is formed such that one or both of the ends of the magnet unit 30 in the longitudinal direction are thinner than other portions. Thereby, it can be adjusted so that the magnetic field at the longitudinal end of the magnet unit 30 is weaker than the central part.

Here, a configuration for making the magnetic field strength different between the longitudinal end portion and the central portion of the magnet unit 30 will be described below with reference to FIGS. 6 (a) to 6 (d). FIGS. 6B to 6D are longitudinal sectional views of various configurations of the magnet unit 30 used for the magnetron cathode electrode of the magnetron sputtering apparatus of the present invention. FIG. 6A shows the magnet unit 30.
FIG.

As described above, the magnet unit 30 includes the magnet assembly 44 for the center magnet and the magnet assembly 4 for the peripheral magnet.
5 is fastened with a bolt to a base yoke 41 serving as the entire base of the magnet unit 30, and the base yoke 41, the magnet assembly 44 for the center magnet and the magnet assembly 45 for the peripheral magnet are formed of the constituent members of the magnet unit 30. At the longitudinal end 30b of the magnet unit 30, one or both of them are formed thinner than the central part 30a.

In order to adjust the intensity distribution of the magnetic field generated by the magnet unit 30 on the surface of the target 4, the distance between the surface of the magnet unit 30 and the surface of the target 4 is adjusted by the magnetic field generating mechanism 7, the backing plate 6, Is adjusted according to the interval.

In the magnet unit 30 shown in FIG. 6 (b), the thickness of the magnet assembly 44 for the center magnet and the magnet assembly 45 for the peripheral magnet are made uniform, and the thickness of the base yoke 41 is set to the longitudinal end 30b of the magnet unit 30. At the center portion 30a. As a result, the distance between the surface of the magnet unit 30 and the surface of the target 4 at the longitudinal end 30b of the magnet unit 30 is longer than the distance at the center 30a, and the magnetic field intensity at the surface of the target 4 is reduced. The area corresponding to the longitudinal end 30b is smaller than the area corresponding to the center 30a. That is, the magnet unit 30 is provided with a longitudinal end 30b of the magnet unit 30.
, To reduce the magnetic field strength.

The magnet unit 30 shown in FIG.
As in the magnet unit 30 shown in FIG. 6A, the thickness of the center magnet magnet assembly 44 and the peripheral magnet magnet assembly 45 is uniform. This magnet unit 30
In this embodiment, an auxiliary yoke 48 is provided between the base yoke 41 and the magnet assembly 45 for the peripheral magnet except for the vicinity of the center of the central portion 30a. Although not shown, an auxiliary yoke 48 having the same thickness is provided between the center magnet magnet assembly 44 and the base yoke 41. As a result, the surface of the region other than the vicinity of the center of the center portion 30a of the magnet unit 30 comes closer to the target 4, and as a result, the magnetic field strength near the center of the target 4 becomes weaker than that on both sides.

Furthermore, the magnet unit 3 shown in FIG.
0 is the central portion 3 of the magnet unit 30 shown in FIG.
The auxiliary yoke 48 is provided only near the center of Oa. As a result, only the surface near the center of the magnet unit 30 comes closer to the target 4, and as a result, the magnetic field intensity near the center of the target 4 becomes stronger than in other regions.

In the magnetic field generating mechanism 7, the magnet units 30 to be combined may all have the same size and the same polarity magnetic pole structure.
When a plurality of the magnet units 30 are arranged, the magnetic field strength on the surface of the target 4 generated by the magnetic field generating mechanism 7 becomes weak at the end in the arrangement direction of the magnet units 30. In addition, the uniformity of the magnetic field can be obtained by increasing the size in the direction in which the magnet units 30 of the peripheral magnets 32 are arranged.

For example, as shown in FIG.
In the case where the magnet unit 30 is combined, if an auxiliary plate 49 is provided between the support member 7a of the magnetic field generating mechanism 7 and the magnet unit 30 at the short end, the magnetic field generating mechanism 7 Of the magnetic field generated on the target 4
The magnetic field strength can be increased at the end of the magnet units 30 in the arrangement direction, and as a result, the magnetic field strength on the surface of the target 4 can be made uniform. The auxiliary plate 49
Need not have soft magnetism as long as it is a conductive material.

Here, the actual dimensions of the magnetic field generating mechanism 7 shown in FIGS. 4A and 4B will be described.

Target 4 applied to magnetic field generating mechanism 7
Has a size of 825 mm x 975 mm x 6 mm,
The thickness of the backing plate 6 is 19 mm. Since there are seven magnet units 30 (n = 7), the width TW of the magnetic field generating mechanism 7 in the direction in which the magnet units 30 are arranged is TW = 825 m.
m, and TW = (2 × 7 + 1) × P, the pitch P =
Each magnet unit 30 was arranged so as to be 55 mm.

The center magnet 31 and the peripheral magnet 32 constituting the magnet unit 30 are neodymium rare earth permanent magnets having a thickness (magnetization direction) of 15 mm and a residual magnetic flux density of about 1.35 T. Magnet unit 30 at both ends
The center magnet 31 and the peripheral magnet 32 belonging to the other magnet unit 30 are designed to increase the dimension in the arrangement direction of the magnet units 30 as compared with the center magnet 31 and the peripheral magnet 32 belonging to another magnet unit 30.

Thus, the magnetic field strength distribution in the direction in which the magnet units 30 are arranged can be made uniform in a state where the seven magnet units are on the same plane. Further, the magnet assembly for central magnet 44 at the long side end of each magnet unit 30,
Both the magnet assembly 45 for the peripheral magnet and the base yoke 41 were formed thin.

As described above, in order to make the erosion of the target 4 substantially uniform, the pitch P of the high-density plasma 36 on the surface of the target 4 needs to be the same in the magnetic field generating mechanism 7 as described above.

In order to make the pitch P between the magnet units 30 equal to each other in the magnetic field generating mechanism 7, as described above, the width MW and the pitch P of the magnet unit 30 in the short direction are P> MW / 2. It should be in the relationship. Regarding this, FIGS. 8A to 9C and FIGS.
This will be described below with reference to (c). FIG.
(C) is an explanatory diagram for the case of P> MW / 2, FIG.
(A)-(c) is explanatory drawing about the case of P <MW / 2.

As shown in FIG. 8A, the magnet unit 3
The position of the magnet unit 30 between the positions where the lines of magnetic force 34 become parallel to the surface of the target 4 in the arrangement of the target 4 shown in FIG. When the pitch P, which is the distance, is set large,
As shown in FIG. 8B, the distance between the highest plasma portions of the high-density plasma 36 formed on the surface of the target 4 is also the pitch P.

Therefore, when the magnet unit 30 in which P> MW / 2 is set is arranged in the longitudinal direction, FIG.
As shown in (c), a gap C can be provided between each magnet unit 30. In this case, by adjusting the gap C, the distance between the high-density plasmas 36 of the adjacent magnet units 30 can be made equal to the pitch P of the magnet units 30. That is, when the magnet units 30 are arranged in the short direction of the magnet units 30, the intervals between the high-density plasmas 36 can all be the same.

On the other hand, as shown in FIG.
9 (b), the magnetic force lines 34 ′ are parallel to the surface of the target 4 in the arrangement of the target 4 shown in FIG. When the distance P 'between the positions is set to be small, the distance between the highest portions of the high-density plasma 36' formed on the surface of the target 4 also becomes P ', as shown in FIG. 9B. Here, assuming that MW is constant,
P> P ′. The magnet unit 30 'includes a center magnet 31', a peripheral magnet 32 ', and a yoke 33'.

Therefore, in an attempt to make the distance between the high-density plasmas 36 ′ of each magnet unit 30 ′ the same,
Even if the magnet units 30 'set to P'<MW / 2 are arranged in the longitudinal direction, as shown in FIG. 9C, P '<
MW / 2, each magnet unit 30 '
Are arranged without gaps, the distance P ″ of the high-density plasma 36 ′ between the magnet units 30 ′ is larger than the distance P ′ (P ′ <P ″), and the magnet unit 30 ′ is separated from the magnet unit 30 ′. High-density plasma 3 when arranged in short direction
The intervals between 6 'cannot be the same.

From the above, it can be seen that in order to make the erosion of the target 4 uniform, the width MW and the pitch P in the short direction of the magnet unit 30 need only be in a relationship of P> MW / 2.

Therefore, as shown in FIG. 10, of the dimensions of the target 4, the dimension TW in the direction in which the plurality of magnet units 30 are arranged and the longitudinal direction of the magnet unit 30 of the racetrack-shaped high-density plasma 36. Is equal to the pitch P in the short side direction of the rectangle parallel to P = TW / (2 × n +
It can be designed to satisfy the relationship 1).
In this state, when the sputtering is performed without moving the magnetic field generating mechanism 7, the target 4 is eroded at the portions arranged at the pitch P as shown in FIG.

The magnetic field generating mechanism 7 is configured to reciprocate at a constant speed in the direction in which the magnet units 30 are arranged. At this time, the amplitude SW of the magnetic field generation mechanism 7 is eroded by the individual high-density plasma 36 by setting SW ≦ P with respect to the pitch P of the long sides of the racetrack-shaped high-density plasma 36. The surface portions of the target 4 are set so as not to overlap. In this case, as shown in FIG. 11B, the erosion of the target 4 does not progress locally,
It is almost uniformly eroded.

As described above, the purpose of the present invention is not to make the progress of erosion of the target 4 completely uniform, but to keep the thickness distribution of the thin film formed on the substrate 3 within a predetermined range. The purpose is to maximize the use efficiency of the target 4 as much as possible.

For example, if the target 4 has an infinite size, a thin film having a uniform thickness can be formed on the substrate 3 if the target 4 is completely and uniformly eroded. In this case, the ratio between the target material deposited on the substrate 3 as a thin film and the target material removed from the surface of the target 4 becomes zero.
This is because the denominator indicating the above ratio becomes infinite because the target 4 has an infinite size.

If the target 4 and the substrate 3 have the same or smaller areas, the thickness of the thin film formed on the substrate 3 will not be uniform even if the target 4 is eroded evenly.

Therefore, it is conceivable to use a target slightly larger than the effective film formation area of the substrate 3 as the target 4. In this case, the target 4 has a size of 1.2 to 1.5 times, preferably 1.3 to 1.4 times, the side length of the substrate 3.

In this case, in order to make the erosion progress of the target 4 as uniform as possible, and to make the thin film formed on the substrate 3 uniform, the magnetic field is generated so that the erosion progresses faster at the periphery of the target 4 than at the center. The mechanism 7 is adjusted.

Therefore, the target 4 is
As shown in (c), the erosion progress of both ends of the target 4 is more advanced than the erosion progress of the other portions.

If the magnetic field generating mechanism 7 is reciprocated in the direction in which the magnet units 30 are arranged according to the amplitude SW ≦ P,
As shown in FIG. 11D, it can be seen that the target 4 is eroded almost uniformly as a whole although the erosion progresses slightly at the periphery.

As described above, since the size of the target 4 is finite, the ratio between the target material deposited as a thin film on the substrate 3 and the target material removed from the surface of the target 4 does not become zero. , Usually target 4
About 50% of the amount of target material removed from the surface will be deposited on the substrate 3.

The ratio of the volume of the eroded portion of the target 4 to the volume of the new target base material is 20 to 3%.
Since it is 0%, at most about 60%, the target material actually deposited on the surface of the substrate 3 is at most about 30% of the new target 4 itself.

As described above, by weighting the progress of erosion of the target 4, the thickness distribution of the thin film formed on the substrate 3 can be adjusted, and the use efficiency of the target 4 itself can be increased. .

More specifically, for example, when the magnet unit 30 is incorporated into the magnetic field generating mechanism 7, the magnetic field is stronger at both ends in the direction in which the magnet units 30 are arranged on the surface of the target 4 than at the center, and the magnet units 30 are arranged at right angles. The center magnets 3 are arranged so that the magnetic field is weaker at the ends in the direction than at the center.
1. Adjust the dimensions of the peripheral magnet 32 and the yoke 33. Thus, the target 4 can be uniformly eroded, and the thickness distribution of the thin film on the substrate 3 can be corrected.

For example, the three-dimensional graphs shown in FIGS. 12 and 13 assume that the surface of the target 4 is eroded uniformly, and furthermore, the emission density of sputtered particles is the The figure shows the result of performing a film thickness distribution simulation of a thin film formed on the surface of the substrate 3 based on the cosine law when the cosine is proportional to the cosine.

In the three-dimensional graph, the target 4 has a similar shape to the substrate 3 with a side length of 1.5 times that of the substrate 3.
Shows the results when the short side is 550 mm and the long side is 650 mm.

Here, the numerical values on the horizontal axis of the three-dimensional graph in FIGS. 12 and 13 indicate the distance from the center of each side of the substrate 3. That is, the axis corresponding to the short side direction of the substrate 3 indicates a value from -270 mm to +270 mm, and the axis corresponding to the long side direction indicates the value from -320 mm to +310 mm. The vertical axis indicates the relative thickness distribution of the thin film formed on the surface of the substrate 3. The numerical value on the vertical axis indicates the deviation of the film thickness within one surface of the substrate 3 with the central film thickness (0 in distribution) being (Tmax + Tmin) / 2.
If the value Z on the vertical axis is expressed by a mathematical expression, it is as follows.

Z = {Tlocal− (Tmax + Tmin) / 2}
/ {(Tmax + Tmin) / 2} × 100 where Tmax is the maximum in-plane film thickness, Tmin is the minimum in-plane film thickness, and Tlocal is the film thickness at each position.

Usually, the film thickness distribution is ± (Tmax−Tmin)
/ (Tmax + Tmin) is evaluated by a numerical value expressed as a percentage. In the above equation, Tlocal is Tmax or Tmi.
It is equivalent to the value to which n is substituted.

Although the degree of the film thickness distribution of the thin film formed on the surface of the substrate 3 also depends on the distance between the substrate 3 and the target 4, the target 4 is infinitely large with respect to the substrate 3 as described above. Reflecting the absence, the film thickness becomes thinner at the periphery of the substrate 3, particularly at the four corners, as shown in the three-dimensional graph shown in FIG.

To correct this, a simulation of the film thickness distribution based on the cosine law in which the erosion progresses rapidly at the peripheral portion of the target 4 (the emission density of sputtered particles is large) was performed, and the three-dimensional graph shown in FIG. 13 was obtained. It became. It can be seen from this three-dimensional graph that the drop in the film thickness at the peripheral portion of the substrate 3 has been corrected.

Therefore, when assembling the magnet unit 30 into the magnetic field generating mechanism 7, the magnet unit 3
By increasing the magnetic field at both ends in the direction in which the magnetic field is aligned with the central part, the plasma density in the portion along the long side of the target 4 is increased, and the direction in which the magnetic field generating mechanism 7 reciprocates (target 4 (short side direction) can be corrected.

Further, by weakening the magnetic field at the end perpendicular to the arrangement of the magnet units 30 with respect to the center, the end of the rectangular magnet unit 30 in the long side direction (the peripheral portion along the short side of the target 4) ), The erosion progress rate of the target 4 is adjusted based on the difference in plasma stay time on the surface of the target 4 when the magnetic field generation mechanism 7 reciprocates, and the film thickness distribution is corrected. be able to.

As described above, by adopting the configuration disclosed in the present invention, a thin film having a uniform thickness and film quality can be formed on the surface of a stationary rectangular substrate by using a rectangular target larger than the effective film formation area of the substrate. A magnetron sputtering apparatus having a magnetron cathode electrode that can be formed can be configured in a form that enables high-speed film formation without providing a complicated mechanism.

More specifically, since the magnetic field generating means is a combination of a plurality of rectangular magnet units, it is possible to obtain a plurality of racetrack-shaped high-density plasmas. As a result, the power supplied for plasma generation is dispersed into a plurality of plasmas, so that the power density can be easily suppressed as compared with the case where a single magnet unit is used, and there is no abnormal discharge such as arc discharge. It is possible to supply a large amount of power, and it is possible to increase the film forming speed as the performance of the apparatus.

Regarding a single magnet unit, the pitch P of a portion parallel to the long side direction of the magnet unit of the race track-like high-density plasma formed on the target surface by the single magnet unit
With respect to the dimension MW in the short side direction of the magnet unit, P>
MW / 2, so that the pitch of the racetrack-like high-density plasma formed by adjacent magnet units is equal to the pitch P of the racetrack-like high-density plasma formed by each magnet unit. The gap C between the units can be secured and arranged.

On the other hand, since the magnetic field generating means is installed in a vacuum chamber provided on the back side of the target, the backing plate to which the target is bonded in the operating state of the apparatus has the target side (film formation space side) and its back side (composite magnetic field). Both sides (circuit side) are evacuated. This allows
Since there is no pressure difference on both sides of the backing plate to which the target is bonded, which substantially affects the mechanical structure, the backing plate has the mechanical strength necessary for bonding to the target and attaching to the device. The thickness may be small, and the thickness can be reduced as compared with a case where the layer has strength enough to withstand the atmospheric pressure.

Furthermore, since the distance between the surface of the magnetic field generating means and the target surface can be reduced, when the same magnetic field generating means is used, the magnetic field intensity on the target surface can be increased, and the higher density can be achieved. Plasma can be generated, and device performance can be improved. Further, the volume of the permanent magnet required for obtaining a constant magnetic field strength can be reduced, which is advantageous in cost.

Furthermore, since the main part of the magnetic field generating means, the main part of the reciprocating drive system of the magnetic field generating means, and the vacuum chamber itself have the same potential as the target and the backing plate, the vacuum chamber provided on the back of the target in which the magnetic field generating means is housed. The exhaust of the magnetron for sputtering by applying a high voltage to the backing plate to which the target is bonded, even if the exhaust of the so-called "roughing" like an oil rotary pump or a combination of an oil rotary pump and a mechanical booster pump. When a discharge is caused, no discharge occurs between the backing plate and the vacuum chamber provided on the back surface of the target in which the magnetic field generating means is housed or its contents.

Also, a pump for evacuating the vacuum chamber provided on the back surface of the target in which the magnetic field generating means is housed can be a roughing pump as described above. Since an exhaust system including various valves for operating the device is not required, the cost as an apparatus can be reduced.

Further, when the magnet units are assembled into a composite magnetic circuit, a magnetic field is strong at the both ends of the magnet surface on the target surface in the direction in which the magnet units are arranged. The center magnet, the peripheral magnet, and the yoke dimensions are adjusted so as to be weak.

Thus, the magnetic field generating means is reciprocated on the back side of the backing plate in the short side direction of each magnetic circuit to change the position of the racetrack-shaped high-density plasma on the target surface, thereby uniformly eroding the target. When forming a sputtered thin film on a substrate by proceeding, when the target is completely and uniformly eroded in an actual device configuration in which the target is not infinitely large with respect to the size of the substrate to be formed Can be corrected.

Further, the magnet unit constitutes a magnet assembly in which a center magnet and a peripheral magnet are adhered and fixed to a magnet assembly yoke, and the magnet assembly is bolted to a base yoke serving as a base for the entire magnet unit. The strength distribution of the magnetic field generated by the magnet unit on the target surface is adjusted by bolting with the auxiliary yoke inserted between the magnet assembly and the base yoke. It can be realized by adjusting the distance between.

The fastening hole provided in the magnet assembly yoke of the magnet assembly is a long hole so that the position of the magnet assembly can be adjusted in the driving direction of the magnetic field generating means on the base yoke. The pitch P in the rectangular short side direction of the portion parallel to the long side direction of the magnet unit of the race track-shaped high density plasma when a plurality of magnet units are combined without setting the processing accuracy of the
Can be adjusted to be equal. That is, it is possible to reduce the cost of the magnet and to easily manufacture a desired magnetic field generating means by absorbing variations in magnetic characteristics including the yoke and variations in assembly such as adhesion accuracy.

Further, the base yoke and the magnet assembly yoke of the magnet assembly, which are constituent members of the magnet unit, are arranged at the longitudinal ends of the magnet unit where the racetrack-shaped high-density plasma on the target surface is almost parallel to the driving direction of the magnetic field generating means. In either part, either or both of the base yoke and the magnet assembly yoke are formed to be thinner than the other parts, so that the magnetic field at the end perpendicular to the magnet unit, i.e., at the end in the longitudinal direction of the magnet unit, is higher than the center. It can be adjusted to be particularly weak.

The base yoke and the magnet assembly yoke are made of a conductive soft magnetic material. The center magnet and the peripheral magnet are made of a conductive magnet material or have a conductive surface coating. In the magnet assembly, the center magnet and the peripheral magnet are fixed to the magnet assembly yoke with a conductive adhesive, so that the magnetic field generating means is supported by a conductive substance, and the necessary electrical connection is made. The same potential can be achieved even for the magnets constituting the magnetic circuit.

As the permanent magnet material constituting the above-mentioned center magnet and peripheral magnet, a rare earth magnet (neodymium-iron, samarium-cobalt, etc.) is used as the magnet having the largest energy product. However, rare earth magnets are fragile and have poor corrosion resistance. Therefore, if the surface is coated with a conductive coating, the above-mentioned disadvantages can be compensated, and damage and corrosion of the magnet can be prevented when assembling the magnet unit or the composite magnetic circuit.

[0214]

As described above, the magnetron sputtering apparatus according to the first aspect of the present invention is disposed to face a rectangular substrate on which a thin film is formed in a vacuum chamber, and has a rectangular shape larger than the effective film forming area of the substrate. A target, and magnetron discharge to the target to generate a plurality of closed racetrack-shaped high-density plasmas on the surface of the target; and Drive means for reciprocating in parallel to either the long side or the short side of the target, wherein the plasma generation means includes a Longitudinal distance between the racetrack-shaped high-density plasma in the long-axis linear region and the adjacent long-track straight-track high-density plasma in the long-axis direction The driving means generates the racetrack-shaped high-density plasma such that the interval in the region becomes substantially equal to the area, and the driving means causes the plasma generating means to have an amplitude not larger than the interval between the generated racetrack-shaped high-density plasmas. This is a configuration of reciprocating at a constant speed.

Therefore, the plasma generating means is provided on the surface of the target along the moving direction of the plasma generating means in the longitudinal direction linear region of each race track-shaped high-density plasma and the adjacent races. The track-shaped high-density plasma is generated such that the intervals in the long-axis direction linear region of the track-shaped high-density plasma are substantially equal.

As a result, the power supplied for plasma generation is dispersed to a plurality of plasmas, so that the power density can be suppressed and large power can be supplied without abnormal discharge such as arc discharge. As a result, it is possible to increase the film forming speed as the performance of the apparatus.

Further, since the driving means reciprocates the plasma generating means at a constant speed with an amplitude not larger than the interval between the generated high-density plasmas of the racetracks, the individual racetracks are individually driven. The target surface portions eroded by the high-density plasma do not overlap, and the erosion of the target locally can be prevented from progressing.

Therefore, according to the magnetron sputtering apparatus having the above-described structure, the magnetron sputtering apparatus has a simple mechanism composed of cost-effective components, and can effectively use the supplied electric power for sputtering the target. This has the effect of keeping the utilization efficiency of the target high and keeping the thickness distribution of the thin film formed on the substrate within a predetermined range.

According to the magnetron sputtering apparatus of the second aspect of the present invention, as described above, in addition to the configuration of the first aspect, the interval between the racetrack-shaped high-density plasmas is the highest density of the racetrack-shaped high-density plasmas. The configuration is a distance between high portions.

Therefore, in addition to the effect of the configuration of claim 1, the interval between the racetrack-shaped high-density plasmas is the distance between the highest-density portions of the racetrack-shaped high-density plasma, so The amplitude when the magnetic circuit is reciprocated at a constant speed in the direction in which the magnetic units are arranged can be set smaller than the distance between the highest-density portions of the racetrack-shaped high-density plasma. As a result, The target surface portions eroded by the individual racetrack-shaped high-density plasmas do not overlap, and the erosion of the target can be locally suppressed.

As described above, the magnetron sputtering apparatus according to the third aspect of the present invention is disposed opposite to the rectangular substrate on which the thin film is formed in the first vacuum chamber, and has a rectangular shape larger than the effective film forming area of the substrate. A target, disposed on the back side of the backing plate supporting the target, a magnetic field generating means for generating a magnetic field on the surface of the target facing the substrate, and the magnetic field generating means, with respect to the target, Driving means for reciprocating in parallel to either the long side or the short side of the target, wherein the magnetic field generating means includes a rectangular magnet unit for generating a magnetic field on the target surface, the long sides of which are adjacent to each other. And a plurality of composite magnetic circuits arranged so as to exhibit the same polarity. The composite magnetic circuit is reciprocated at a constant speed in the direction in which the magnetic units are arranged with respect to a pitch P of a line connecting the points at which the component perpendicular to the surface becomes zero and parallel to the long side of the magnet unit. The composite magnetic circuit is configured to reciprocate so that the amplitude SW at the time of performing the operation satisfies the relationship of SW ≦ P.

Therefore, the composite magnetic circuit in which the magnetic field generating means arranges a plurality of rectangular magnet units for generating a magnetic field on the target surface such that the long sides thereof are adjacent to each other and have the same polarity. Thus, a plurality of closed racetrack-shaped high-density plasmas converged by the generated magnetic field can be obtained on the surface of the target having the composite magnetic circuit as a source.

As a result, the power supplied for plasma generation is dispersed to a plurality of plasmas, so that the power density can be suppressed, and large power can be supplied without abnormal discharge such as arc discharge. As a result, it is possible to increase the film forming speed as the performance of the apparatus.

[0224] Further, the driving means may determine a line parallel to the long side of the magnet unit among the lines connecting the points at which the component perpendicular to the target surface of the magnetic field generated on the target surface by the composite magnetic circuit becomes zero. With respect to the pitch P, the amplitude SW when the composite magnetic circuit is reciprocated at a constant speed in the direction in which the respective magnetic units are arranged is set so that the relationship of SW ≦ P is satisfied, so that the individual racetracks are set. The target surface portions eroded by the high-density plasma do not overlap, and the effect of locally suppressing the erosion of the target is achieved.

According to a fourth aspect of the present invention, as described above, in addition to the configuration of the third aspect, the magnet unit includes a center magnet disposed at the center of the unit,
A peripheral magnet is provided so as to surround the center magnet and to have a magnetic pole of opposite polarity to the central magnet, and a magnetic field generated on the target surface by the central magnet and the peripheral magnet. The pitch P of a portion parallel to the long side of the magnet unit in the line connecting the points at which the component perpendicular to the target surface becomes zero is P> MW with respect to the dimension MW in the short side direction of the magnet unit. / 2.

Therefore, in addition to the effect of the configuration of claim 3, the magnet unit includes a center magnet disposed at the center of the unit and a magnetic pole surrounding the center magnet and having a polarity opposite to that of the center magnet. Are constituted by peripheral magnets arranged so as to face each other, and among the lines connecting points at which the component perpendicular to the target surface of the magnetic field generated on the target surface by the central magnet and the peripheral magnet becomes zero, The pitch P of the portion parallel to the long side of the magnet unit is P> MW / 2 with respect to the dimension MW of the magnet unit in the short side direction.
With such a configuration, the pitch of the racetrack-like high-density plasma formed by a single magnet unit is also larger than MW / 2.

Therefore, the gap between the magnet units is adjusted so that the distance between the race track-like high-density plasma generated in the adjacent magnet units is equal to the pitch interval of the high-density plasma generated in each magnet unit. The effect that it can be arrange | positioned by this is produced.

According to the magnetron sputtering apparatus of the fifth aspect of the present invention, as described above, in addition to the configuration of the third or fourth aspect, the composite magnetic circuit comprises n (n> 1) magnet units. The interval between the magnet units is set to be equal to the pitch P of the magnetic field generated by each magnet unit, and when the size of the target in the magnet unit arrangement direction is TW, P = TW / (2 ×
n + 1).

Therefore, in addition to the effect of the third or fourth aspect, the composite magnetic circuit is composed of n (n> 1) magnet units, and the interval between each magnet unit is generated from each magnet unit. Is set to be equal to the magnetic field pitch P, and when the size of the target in the magnet unit arrangement direction is TW, P = TW /
By setting (2 × n + 1), the erosion area where the targets are arranged at the pitch P can be scanned with the moving width SW of the magnetic field generating means to be uniform.

According to the magnetron sputtering apparatus of the invention of claim 6, as described above, in addition to any one of the constitutions of claims 3 to 5, the magnetic field generating means is provided on the opposite side of the target to the substrate facing surface. Is arranged in a second vacuum chamber provided in the first vacuum chamber.

Therefore, in addition to the effect of any one of the third to fifth aspects, the magnetic field generating means is disposed in the second vacuum chamber provided on the surface of the target opposite to the substrate facing surface. In this way, the backing plate to which the target is bonded in the operating state of the apparatus is connected to the first vacuum chamber (film deposition space side) on the target side and the second vacuum chamber on the back side thereof.
Both surfaces of the vacuum chamber (composite magnetic circuit side) are evacuated.

As a result, there is no pressure difference on both sides of the backing plate to which the target is bonded, which substantially affects the mechanical structure. Therefore, the backing plate is necessary for bonding to the target and for attaching to the apparatus. The thickness may have a mechanical strength, which is advantageous in that the thickness can be reduced as compared with a case where the strength is sufficient to withstand the atmospheric pressure.

According to a seventh aspect of the present invention, as described above, in addition to the structure of the sixth aspect, the magnetic field generating means disposed in the second vacuum chamber and the driving means for driving the magnetic field generating means are provided. And the second vacuum chamber itself,
This is a configuration in which the same potential as the above-mentioned target and the backing plate supporting the target are set.

Therefore, in addition to the effect of the configuration of claim 6, in addition to the magnetic field generating means disposed in the second vacuum chamber, the driving means for driving the magnetic field generating means, and the second vacuum chamber itself, By being set to the same potential as the target and the backing plate supporting the target,
Even if the exhaust of the second vacuum chamber provided on the back surface of the target in which the magnetic field generating means is housed is about the so-called "roughing" like an oil rotary pump or a combination of an oil rotary pump and a mechanical booster pump, the target is bonded. When a magnetron discharge for sputtering is generated by applying a high voltage to the backing plate thus formed, the backing plate and the second vacuum chamber provided on the back surface of the target in which the magnetic field generating means are accommodated, or the contents thereof. Does not discharge.

Therefore, since the pump for evacuating the second vacuum chamber can be replaced by the roughing pump as described above, an expensive pump for evacuating to a high vacuum and various valves for operating the pump are included. Since an exhaust system is not required, there is an effect that the cost as an apparatus can be reduced.

According to the magnetron sputtering apparatus of the invention of claim 8, as described above, in addition to any one of the constitutions of claims 3 to 7, the composite magnetic circuit may be arranged in the direction in which the magnet units are arranged on the surface of the target facing the substrate. Both ends are adjusted so that the magnetic field is stronger than the center, and both ends in the direction perpendicular to the arrangement direction of the magnet units are adjusted so that the magnetic field is weaker than the center.

Therefore, in addition to the effect of any one of the third to seventh aspects, the composite magnetic circuit has a strong magnetic field at both ends in the arrangement direction of the magnet units on the surface of the target opposed to the substrate with respect to the center, By adjusting both ends in the direction perpendicular to the direction in which the magnet units are arranged so that the magnetic field is weaker than the center, the target is uniformly eroded,
The film thickness distribution on the substrate can be corrected.

Therefore, when the magnet unit is assembled in the composite magnetic circuit, the magnetic field is adjusted so that the magnetic field is stronger at the both ends in the direction of the magnet unit arrangement on the surface of the target than at the center, thereby extending along the target long side. It is possible to increase the plasma density of the portion and correct the film thickness distribution in the direction in which the magnetic field generating means reciprocates (the direction of the short side of the target).

Further, by weakening the magnetic field at the ends perpendicular to the magnet units in the direction perpendicular to the center, the high-density plasma at the long-side ends (peripheral portions along the short sides of the target) of the rectangular magnet units is reduced. This has the effect of reducing the density, adjusting the target erosion progress speed based on the difference in the plasma residence time on the target surface when the magnetic field generating means reciprocates, and correcting the film thickness distribution.

According to a ninth aspect of the present invention, as described above, in addition to the configuration of the eighth aspect, the magnet unit includes a magnet assembly in which a center magnet and a peripheral magnet are bonded and fixed to a magnet assembly yoke. And a base yoke serving as an entire base of the magnet unit. The magnet assembly is fastened to the base yoke with bolts using fastening holes provided in the magnet assembly yoke, and The diameter of the hole is configured to be larger than the diameter of the bolt.

Therefore, in addition to the effect of the constitution of claim 8, the magnet unit comprises a magnet assembly in which a center magnet and a peripheral magnet are bonded and fixed to a magnet assembly yoke, and a base serving as a base of the entire magnet unit. The magnet assembly is configured to be fastened to the base yoke with bolts using fastening holes provided in the magnet assembly yoke, so that a magnetic field generated by the magnet unit is formed on the target surface. The strength distribution can be adjusted by bolting with the auxiliary yoke inserted between the magnet assembly and the base yoke.

According to a tenth aspect of the present invention, as described above, in addition to the configuration of the ninth aspect, the fastening hole of the magnet assembly yoke is used for fastening the magnet assembly and the base yoke. The magnet assembly is formed in a long hole so that the position of the magnet assembly can be adjusted on the base yoke in the driving direction of the magnetic field generating means.

Therefore, in addition to the effect of the ninth aspect, when the magnet assembly and the base yoke are fastened to each other, the fastening hole of the magnet assembly yoke allows the magnet assembly to be positioned on the base yoke by the magnetic field. By being formed in a long hole so that it can be adjusted in the driving direction of the generating means, when a plurality of magnet units are combined, the rectangular short of a portion parallel to the long side direction of the magnet unit of the race track-shaped high-density plasma is obtained. There is an effect that fine adjustment can be performed so that the pitch in the side direction becomes equal.

As described above, in the magnetron sputtering apparatus according to the eleventh aspect, in addition to the configuration of the ninth or tenth aspect, at least one of the magnet assembly yoke and the base yoke has a longitudinal end portion of the magnet unit. This is a configuration formed thinner than other portions.

Therefore, in addition to the effect of the ninth or tenth aspect, at least one of the magnet assembly yoke and the base yoke is formed such that the longitudinal end of the magnet unit is formed thinner than other portions. In addition, it is possible to adjust the magnetic field at the longitudinal end of the magnet unit so that the magnetic field is particularly weak at the center.

According to the magnetron sputtering apparatus of the twelfth aspect, as described above, in addition to any one of the ninth to eleventh aspects, the magnet assembly yoke and the base yoke are made of a conductive soft magnetic material. The center magnet and the peripheral magnet are constituted by a conductive magnet material or a magnet material having a surface coated with a conductive material, and the magnet assembly is configured such that the center magnet and the peripheral magnet are arranged with respect to a magnet assembly yoke. This is a configuration in which it is fixed with a conductive adhesive.

Therefore, in addition to the effect of any one of the ninth and eleventh aspects, the magnet assembly yoke and the base yoke are made of a conductive soft magnetic material, and the center magnet and the peripheral magnet are It is composed of a conductive magnet material or a magnet material having a surface coated with a conductive material, and the magnet assembly has a center magnet and a peripheral magnet fixed to a magnet assembly yoke with a conductive adhesive. The support of the magnetic field generating means is made of a conductive material, and the necessary electric connection is made, whereby the same potential can be obtained up to the magnet surface of the composite magnetic circuit.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a magnetron sputtering apparatus according to an embodiment of the present invention.

2A and 2B are diagrams illustrating a magnetron discharge in a rectangular magnet unit constituting a magnetic field generating mechanism provided in the magnetron sputtering apparatus shown in FIG. 1, wherein FIG. 2A is a perspective view of one magnet unit, (b) is a longitudinal sectional view of the magnet unit shown in (a), (c) is an explanatory diagram in the case of glow discharge in combination with a target in the magnet unit shown in (a), and (d) is (c) It is a perspective view of.

3A and 3B are diagrams showing a state of formation of high-density plasma on a target by a magnetic field generating mechanism of the magnetron sputtering apparatus shown in FIG. 1, wherein FIG. 3A is a plan view and FIG.
FIG. 3 is a longitudinal sectional view of the magnetic field generation mechanism of FIG.

4A is a plan view of a magnetic field generating mechanism of the magnetron sputtering apparatus shown in FIG. 1, and FIG. 4B is a side view of the magnetic field generating mechanism shown in FIG.

5A is an enlarged view of a main part of the magnetic field generating mechanism shown in FIG. 4A, and FIG. 5B is a cross-sectional view of FIG.

6A and 6B are diagrams showing various configuration examples of a magnet unit constituting a magnetic field generating mechanism of the magnetron sputtering apparatus shown in FIG. 1, wherein FIG. 6A is a plan view and FIG. A vertical cross-sectional view, (c) is a cross-sectional view perpendicular to the short direction of the magnet unit in which the auxiliary plate is inserted at two locations in the longitudinal direction, and (d) is an auxiliary plate inserted at only one central portion in the longitudinal direction. It is sectional drawing perpendicular | vertical to the transversal direction of a magnet unit.

FIG. 7 is a schematic configuration diagram showing another example of the magnetic field generation mechanism provided in the magnetron sputtering apparatus of the present invention.

FIGS. 8A to 8C illustrate a case where the relationship between the pitch P between the magnet units constituting the magnetic field generating mechanism and the width MW in the lateral direction of the magnet units is P> MW / 2. FIG.

FIGS. 9A to 9C are diagrams illustrating a case where the relationship between the pitch P between the magnet units constituting the magnetic field generating mechanism and the width MW of the magnet units in the lateral direction is P <MW / 2. FIG.

FIG. 10 shows a target size when a high-density plasma is generated on a target by the magnetic field generating mechanism of the present invention, and a width TW of a magnetic field generating mechanism in which a plurality of magnet units are arranged and a high-density plasma. And the pitch P of the portion parallel to the longitudinal direction of the magnet unit is P = TW / (2 ×
FIG. 9 is an explanatory diagram showing a case where a relationship of (n + 1) is satisfied.

11A and 11B are diagrams showing a state in which a target is eroded by high-density plasma generated from a magnetic field generation mechanism of the present invention. FIG. 11A shows a case where the erosion progress speed is the same at all erosion positions of the target. FIG. 4B is an explanatory view showing a target erosion state when the magnetron discharge is performed with the magnetic field generation mechanism stopped, and FIG. 4B shows the case of FIG. FIG. 3C is a diagram illustrating a target erosion state when the magnetron discharge is performed at a target erosion position corresponding to the magnet units at both ends where the erosion speed is higher than the others and the magnetic field generating mechanism is stopped and the magnetron discharge is performed. Explanatory drawing showing the erosion state of the target, (d) in the case of (c), when the magnetic field generating mechanism is reciprocated at an amplitude where the erosion positions of adjacent targets do not overlap. It is an explanatory diagram showing a target erosion conditions.

FIG. 12 is a graph showing a result of a film thickness distribution simulation of a thin film formed on a substrate surface based on a cosine law, and is a three-dimensional graph in a case where there is a film thickness distribution;

FIG. 13 is a graph showing a result of a film thickness distribution simulation of a thin film formed on a substrate surface based on the cosine law, and is a three-dimensional graph in a case where the film thickness distribution is corrected.

FIG. 14 is a schematic sectional view of a conventional magnetron sputtering apparatus.

FIG. 15 is a sectional view of a main part of a film forming chamber of another conventional magnetron sputtering apparatus.

FIG. 16 is a perspective view of a main part of a film forming chamber of still another conventional magnetron sputtering apparatus.

FIG. 17 is a schematic sectional view of another conventional magnetron sputtering apparatus.

FIGS. 18A to 18C are explanatory diagrams showing an arrangement relationship between a magnetic circuit unit and a target provided in still another conventional magnetron sputtering apparatus.

19A and 19B show the relationship between a magnetic circuit unit and a target provided in another conventional magnetron sputtering apparatus, wherein FIG. 19A is a plan view of the magnetic circuit unit, FIG. 19B is a plan view of the target, and FIG. FIG. 4 is a cross-sectional view showing a state in which the target shown in FIG.

FIG. 20 shows a magnetic circuit unit provided in still another conventional magnetron sputtering apparatus, wherein (a) is a perspective view of a magnetic circuit unit composed of one magnetic circuit,
FIG. 3B is a plan view of a magnetic circuit unit including a plurality of magnetic circuits.

21A and 21B show another conventional magnetron sputtering apparatus, and FIG. 21A is a schematic longitudinal sectional view of a rectangular magnetic circuit unit provided in the magnetron sputtering apparatus;
FIG. 2B is a schematic cross-sectional view in the lateral direction of a rectangular magnetic circuit unit provided in the magnetron sputtering apparatus.

FIGS. 22A and 22B show another conventional magnetron sputtering apparatus, wherein FIG. 22A is a schematic sectional view of the magnetron sputtering apparatus, and FIG. 22B is a plan view of a magnetic circuit unit provided in the magnetron sputtering apparatus shown in FIG. FIG. 3C is an explanatory view showing a positional relationship between a magnetic circuit unit and a target provided in the magnetron sputtering apparatus shown in FIG.

FIG. 23 is a longitudinal sectional view of a magnetic circuit unit showing an eroded state of a rectangular target eroded by a conventional magnetic circuit unit including a plurality of magnetic circuits;
(A) is a longitudinal sectional view showing the erosion state of the target when the magnetic circuit unit is stationary, and (b) shows the erosion state of the target when the magnetic circuit unit oscillates by the amplitude P1 in the longitudinal direction of the target. Longitudinal section,
(C) is a longitudinal sectional view showing the erosion state of the target when the magnetic circuit unit oscillates by the amplitude P2 in the longitudinal direction of the target, and (d) is a case where the magnetic circuit unit oscillates by the amplitude P3 in the longitudinal direction of the target. FIG. 7E is a longitudinal sectional view showing the eroded state of the target, and FIG. 7E is a longitudinal sectional view showing the eroded state of the target when the magnetic circuit unit oscillates by the amplitude P4 in the longitudinal direction of the target.

FIG. 24 is a perspective view showing a target eroded state by a conventional magnetron sputtering apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Film-forming chamber (1st vacuum chamber) 2 Magnet chamber (2nd vacuum chamber) 3 Substrate 4 Target 6 Backing plate (plasma generation means) 7 Magnetic field generation mechanism (plasma generation means, magnetic field generation means) 8 Drive device (drive means) 17) Power supply (plasma generating means) 30 Magnet unit 31 Central magnet 32 Peripheral magnet 33 Yoke 34 Magnetic field line 35 Electric field 36 High density plasma (race track-like high density plasma) 41 Base yoke 42 Magnet assembly yoke for central magnet 43 Magnet for peripheral magnet Assy yoke 44 Magnet assembly for center magnet 45 Magnet assembly for peripheral magnet 46 Bolt 47 Fastening hole

Claims (12)

[Claims] 1. A rectangular target having a thin film formed in a vacuum chamber opposed to a rectangular substrate, the rectangular target being larger than an effective film forming area of the substrate, and a magnetron discharge performed on the target. Plasma generating means for generating a plurality of closed racetrack-shaped high-density plasmas on the surface of the target, and the plasma generating means is arranged in parallel with either the long side or the short side of the target with respect to the target. A driving unit for reciprocating movement, wherein the plasma generation unit is arranged on the surface of the target along a moving direction of the plasma generation unit, with an interval in a long-axis direction linear region of each racetrack-shaped high-density plasma. So that the distance between adjacent racetrack-shaped high-density plasmas in the long-axis linear region is approximately equal. Generates a Zuma, said drive means, a magnetron sputtering apparatus according to claim amplitude of the generated each racetrack shaped high-density plasma intervals following magnitude of the reciprocating at a constant speed the plasma generation means. 2. The magnetron sputtering apparatus according to claim 1, wherein the interval between the racetrack-shaped high-density plasmas is a distance between the highest density portions of the racetrack-shaped high-density plasma. 3. A rectangular target, which is disposed opposite to a rectangular substrate on which a thin film is formed in a first vacuum chamber and is larger than an effective film forming area of the substrate, and a back side of a backing plate supporting the target. And a magnetic field generating means for generating a magnetic field on the surface of the target facing the substrate, wherein the magnetic field generating means is arranged parallel to either the long side or the short side of the target with respect to the target. Driving means for reciprocating movement, wherein the magnetic field generating means comprises a plurality of rectangular magnet units for generating a magnetic field on the target surface such that their long sides are adjacent to each other and have the same polarity. Wherein the driving means comprises a line connecting points at which the component of the magnetic field generated on the target surface perpendicular to the target surface becomes zero. With respect to the pitch P of the line parallel to the long side of the magnet unit, the amplitude SW when the composite magnetic circuit is reciprocated at a constant speed in the direction in which the respective magnetic units are arranged so that the relationship of SW ≦ P is satisfied. A magnetron sputtering apparatus, wherein the composite magnetic circuit is moved. 4. The magnet unit according to claim 1, wherein the central magnet is disposed at the center of the magnet unit, and a peripheral portion is disposed so as to surround the central magnet and to have a magnetic pole having a polarity opposite to that of the central magnet. A portion parallel to the long side of the magnet unit in a line connecting points at which a component perpendicular to the target surface of the magnetic field generated on the target surface by the center magnet and the peripheral magnet is zero. 4. The magnetron sputtering apparatus according to claim 3, wherein the pitch P is formed such that P> MW / 2 with respect to the dimension MW in the short side direction of the magnet unit. 5. The composite magnetic circuit comprises n (n> 1) magnet units, the interval between the magnet units is set to be equal to the pitch P, and the magnet units of the target are aligned. 5. The magnetron sputtering apparatus according to claim 3, wherein, when the dimension in the direction is TW, P = TW / (2 × n + 1). 6. The apparatus according to claim 3, wherein said magnetic field generating means is disposed in a second vacuum chamber provided on a surface of said target opposite to said substrate facing surface. Magnetron sputtering equipment. 7. A magnetic field generating means disposed in said second vacuum chamber, a driving means for driving said magnetic field generating means, and said second vacuum chamber itself are the same as said target and a backing plate supporting said target. 7. The magnetron sputtering apparatus according to claim 6, wherein the magnetron sputtering apparatus is set to a potential. 8. The composite magnetic circuit according to claim 1, wherein a magnetic field is stronger at both ends in the arrangement direction of the magnet units on the substrate facing surface of the target than at the center, and both ends in a direction orthogonal to the arrangement direction of the magnet units are located at the center. 8. The magnetron sputtering apparatus according to claim 3, wherein the magnetic field is adjusted so as to be weaker. 9. The magnet unit includes a magnet assembly in which a center magnet and a peripheral magnet are bonded and fixed to a magnet assembly yoke, and a base yoke serving as a base of the entire magnet unit. Using a fastening hole provided in the magnet assembly yoke, the base yoke is fastened with a bolt, the diameter of the fastening hole is formed to be larger than the diameter of the bolt. The magnetron sputtering apparatus according to claim 8, wherein 10. The fastening hole of the magnet assembly yoke,
10. The magnet assembly according to claim 9, wherein when the magnet assembly and the base yoke are fastened, the position of the magnet assembly is formed in an elongated hole so that the position of the magnet assembly can be adjusted in the driving direction of the magnetic field generating means on the base yoke. The magnetron sputtering apparatus as described in the above. 11. The magnetron sputtering apparatus according to claim 9, wherein at least one of the magnet assembly yoke and the base yoke is formed so that a longitudinal end of the magnet unit is thinner than other portions. . 12. The magnet assembly yoke and the base yoke are made of a conductive soft magnetic material, and the center magnet and the peripheral magnet have a surface coated with a conductive magnet material or a conductive material. The magnetron according to any one of claims 9 to 11, wherein the magnet assembly is made of a magnet material, and the center magnet and the peripheral magnet are fixed to a magnet assembly yoke with a conductive adhesive. Sputtering equipment.