TWI906691B - Splashing equipment - Google Patents

Abstract

The sputtering apparatus of the present invention includes a cathode unit that emits sputtering particles onto a substrate having a substrate surface. The cathode unit has a target, a magnetic element unit, and a magnetic element scanning unit. The magnetic force density generated at the end of the swing region near the outline edge and the magnetic force density generated at the center of the aforementioned swing region are homogenized.

Description

Splashing equipment

This invention relates to a sputtering apparatus, and more particularly to a technique suitable for film formation with a magnetron cathode.

In film deposition apparatuses with magnetron cathodes, methods for moving a magnetic body relative to a target are known for improving target utilization efficiency. As disclosed in Patent 1, it is also known that, in addition to moving the magnetic body, the cathode and target are oscillated relative to the substrate to be deposited for improving film uniformity.

Furthermore, as disclosed in Patent 2, it is known that the magnetic material and cathode are oscillated to prevent generated particles from adversely affecting film formation in the sputtering chamber. Furthermore, as a technique for oscillating the substrate relative to the magnetic material and cathode, the applicant has previously disclosed the technique described in Patent 3. [Prior Art Documents] [Patent Documents]

[Patent Document 1] Japanese Patent Application Publication No. 2009-41115 [Patent Document 2] Japanese Patent Application Publication No. 2012-158835 [Patent Document 3] Japanese Patent Publication No. 6579726

[Problem to be Solved by the Invention] However, even with techniques such as scanning (oscillating) a magnetic body relative to a target as described above, non-corrosion areas can sometimes become a cause of particle generation. For example, due to the formation of non-corrosion areas, particles can sometimes be generated in the vicinity of the periphery of the film-forming area near the edge within the oscillation range of the magnetic body. Therefore, there has been a prior desire to eliminate this problem of particle generation. In particular, it is known that compared to the formation of non-corrosion areas, when the boundary between the non-corrosion and corrosion areas is unclear, resplashing due to redeposition (splashing film deposited on the target) can occur, becoming a problem-prone cause of particle generation.

Furthermore, even with techniques such as scanning (oscillating) a magnetic material relative to a target as described above, non-eroded areas are created. Therefore, in the area near the periphery of the film-forming region close to the oscillation range of the magnetic material, problems arise such as reduced film thickness, uneven film thickness distribution, and uneven film composition. These problems remain unresolved. Moreover, due to the increasing size of the film-forming substrate, further improvements to address these defects are required.

In particular, there is a demand to focus on solving the above-mentioned problem at the edge along the swing direction of the swing range of a magnetic body having a rectangular shape.

This invention was made in view of the above-mentioned situation and achieves the following objectives: 1. To suppress the generation of areas with unclear boundaries between non-corrosion and corrosion areas around the non-corrosion zone, thereby reducing the causes of particle generation. 2. To stabilize the generated plasma distribution and improve the uniformity of film thickness distribution and film thickness characteristic distribution. 3. In particular, the above-mentioned improvement can be achieved in the region near the edge of the oscillation range of a rectangular magnetic body, specifically in the area along the oscillation direction. 4. To extend target life. 5. To reduce the number of parts, enabling miniaturization and weight reduction of device components. 6. To stabilize the generated plasma distribution, improving the uniformity of film thickness distribution and film thickness characteristics regardless of the oscillation position of the magnetic body. [Technical Means for Solving the Problem]

The inventors have successfully achieved the suppression of particle generation caused by non-corrosion regions, the suppression of film thickness distribution deviations, and the suppression of film property distribution deviations through in-depth research.

In sputtering, an applied electric force generates a magnetic field (magnetic field, magnetic lines of force) from the magnetic poles (magnetic body) of the magnetic material unit. This facilitates the movement of sputtered plasma or electrons along the magnetic lines of force generated by the magnetic body. Within the magnetic material unit, an N pole is arranged in a racetrack shape around a central rod-shaped S pole. Electrons and other particles move along this racetrack shape. Here, magnetic lines of force generated by the magnetic material unit, particularly those facilitating plasma generation, extend from the N pole (parallel to the target) towards the target in an arc shape to the S pole. Simultaneously, the magnetic lines of force generated by the magnetic body penetrate the target from the N pole, from the back side to the front side, along the thickness direction. Furthermore, magnetic field lines are generated in an arc shape within the plasma generation space, extending from the front side to the back side of the target, penetrating the target in the thickness direction, and returning to the S pole.

A portion with a grounded potential, such as an anode, is arranged around the periphery of the target's end. In this state, when a magnetic element is scanned (oscillated), and the magnetic element is located near the oscillating end, it is close to the anode. Sometimes, in the region near the oscillating end of the magnetic element, magnetic field lines formed from the N pole move towards the anode of the magnetic element instead of returning to the S pole. As a result, electrons, being tracked (moved) along the magnetic field lines, do not return to the plasma generation space, thus failing to contribute to plasma generation and flowing towards the anode. This is called "electron attraction."

If electrons are attracted to the anode, the electron density on the front side of the target, i.e., in the plasma generation space, decreases. This can sometimes lead to a decrease in plasma density or even no plasma generation. This is called "plasma attraction." In cases where this occurs, the target is not sputtered with plasma. Consequently, a non-corrosive region is created, and sometimes this non-corrosive region becomes larger.

Here, when electrons are attracted to the anode, the plasma in the vicinity of the anode experiences a conduction-off event, making the plasma generation state unstable. Therefore, conduction-off events occur due to plasma-induced sputtering. Consequently, the possibility of microparticle generation caused by sputtering of the redeposited film increases.

That is, due to the formation of non-corrosion regions, the area near the periphery of the film-forming region close to the oscillation range of the magnetic unit sometimes becomes a cause of particle generation. At this time, the boundary between the non-corrosion and corrosion regions becomes unclear, forming a boundary region between corrosion and non-corrosion.

In cases where non-corrosive areas are generated and the boundaries between non-corrosive and corrosive areas are unclear, resplashing and other phenomena caused by the redeposited film can occur, which are considered to be the cause of problematic particle generation.

As described above, when electrons are attracted to the anode, the magnetic field lines formed by the magnetic unit are directed towards the anode, that is, they are tilted outwards from the outline of the target in a direction closer to the target's thickness.

To avoid this situation, the magnetic field lines generated by the magnetic field unit must be prevented from pointing towards the anode along the edge of the swing range of the rectangular magnetic element. This reduces the number of attracted electrons. Therefore, previously, anode blocks and other components that absorb magnetic field lines have been installed at the anode located around a substrate called a shield. However, the anode block, positioned opposite the target, is a film component and must be removed. Consequently, the anode block sometimes becomes a source of particle generation.

Therefore, in order to solve this problem, the inventors discovered that by preventing the magnetic field lines generated by the magnetic unit from pointing towards the anode at the swing end of the magnetic unit without using an anode block, it is possible to reduce particle generation and the number of attracted electrons. That is, at one end of the edge of the swing range of the rectangular magnetic unit, which is the edge along the swing direction, the magnetic field lines generated by the magnetic unit are inclined towards the other end of the edge of the swing range of the magnetic unit that is closer to the thickness direction of the target than the target, that is, inclined inward towards the outline of the target that is further away from the target than the thickness direction of the target. This is effective in reducing the non-corrosion area.

Furthermore, in the above explanation, it is described in the usual way as the magnetic field lines moving from the N pole to the S pole, but even if the polarities are opposite, it will not hinder the understanding of the phenomenon.

Furthermore, in the case of non-erosion regions, plasma generation is suppressed. Therefore, the applied supply power is not consumed by plasma generation and remains. This surplus power is redistributed to regions different from the initially formed non-erosion regions, or absorbed as an overall voltage (power) variation. Thus, the plasma generation conditions change like voltage variations, resulting in deviations in film thickness distribution, which in turn contribute to the amplification of deviations in film property distribution.

That is, when electrons are attracted to the anode, non-erosion regions are generated, which amplifies the deviations in film thickness distribution and film quality distribution.

Furthermore, even when non-corrosive regions are generated, sometimes changes in plasma generation conditions due to voltage variations or other reasons can lead to the formation of non-corrosive regions that differ from the initially formed non-corrosive regions. In such cases, the generation of microparticles and the amplification of deviations in film thickness distribution or film property distribution are amplified.

Therefore, in order to solve this problem, the inventors discovered that by making the edge of the rectangular magnetic unit along the direction of oscillation in the edge of the oscillation range, the magnetic field lines generated by the magnetic unit are not directed toward the anode, thereby reducing the number of attracted electrons. Specifically, it was discovered that at one end of the edge of the oscillation range of a rectangular magnetic element, which forms the edge along the oscillation direction, the magnetic field lines generated by the magnetic material are inclined towards the other end of the oscillation range edge of the magnetic element, closer to the target's thickness direction; that is, inclined inward towards the outline of the oscillation range closer to the target's thickness direction. This is effective in suppressing deviations in film thickness distribution and film property distribution. Furthermore, to solve this problem, the inventors also discovered that it is preferable to generate magnetic field lines at the oscillation end of the magnetic element as well.

On the other hand, during plasma generation, electrons orbiting the racetrack-shaped magnetic element orbit independently of electrons orbiting adjacent magnetic elements. However, in cases of disordered magnetic field lines generated by the magnetic elements, electrons orbiting adjacent magnetic elements may mix. In this state, the generated plasma becomes unstable. It has been determined that this instability occurs in the region near the ends of the long sides of a plurality of parallel magnetic elements.

In particular, consider the following situation: where a large-area substrate, such as the glass substrate used in the manufacture of flat panel displays, is formed. In this case, it is necessary to manufacture a long target. Consequently, the length of the magnetic body of the magnetic unit, i.e., the central and peripheral magnet portions of the magnet unit, also increases. In this case, in the peripheral region before the direction is changed by the bending of the electromagnetic field, the density of electrons orbiting in a racetrack shape locally increases, while in the peripheral region after the direction is changed, the density of orbiting electrons locally decreases. The inventors have discovered that due to this phenomenon, electrons orbiting adjacent magnetic units may mix.

Here, in areas where electron density is locally high, the plasma concentrates, causing the substrate temperature to rise. Conversely, in areas where electron density is locally low, plasma formation becomes unstable, and the plasma may sometimes disappear. In other words, under these conditions, the result is plasma instability, the generation of microparticles, and an amplification of deviations in film thickness distribution or film property distribution.

To solve this problem, the inventors discovered that by forming magnetic field lines in a stable racetrack shape using electrons and the like in a state where each of the parallel magnetic units is independently separated, stable plasma generation can be continuously achieved. In this way, the erosion area of the target accompanying the sputtering process can be made approximately uniform without causing local loss of plasma, thereby improving the utilization efficiency of the target.

In view of the above-mentioned considerations, the inventors have completed the invention as follows.

One aspect of the sputtering apparatus of the present invention includes a cathode unit that emits sputtering particles onto a substrate having a substrate surface; the cathode unit comprises: a target for forming an etched region; a magnetic unit disposed opposite to the target and the substrate, forming the etched region on the target; and a magnetic unit scanning unit that, between a first oscillation end and a second oscillation end along the oscillation direction of the substrate surface, moves the magnetic unit and the substrate to form a film. The device reciprocates relative to each other; a swinging region is formed between the first swinging end and the second swinging end; the swinging region has: a contour edge along the long side of the magnetic element and a central portion along the long side of the magnetic element; the magnetic element extends along the surface of the substrate in a swing width direction intersecting the swinging direction; the magnetic force density generated at the end of the swinging region near the contour edge and the magnetic force density generated at the central portion of the swinging region are homogenized. This solves the aforementioned problem. In one embodiment of the sputtering apparatus of the present invention, it is feasible for the aforementioned magnetic unit to have: a first magnetic pole, i.e., a central magnet portion, which is arranged in a straight line and forms a magnetic boundary toward the aforementioned target; and a second magnetic pole, i.e., a peripheral magnet portion, which forms a magnetic boundary toward the aforementioned target and has a polarity different from that of the first magnetic pole; and the aforementioned peripheral magnet portion has two long-side straight sections and a bridging section; the aforementioned two long-side straight sections are located at the aforementioned central magnet portion. The two sides of the bridging portion are equally spaced from the central magnet portion and extend parallel to each other along the long side direction. The bridging portion connects the ends of each of the two long-side straight portions. The peripheral magnet portion surrounds the central magnet portion along the oscillation region, thus homogenizing the magnetic field density generated at the central portion and the magnetic field density generated at the ends of the oscillation region. In one embodiment of the sputtering apparatus of the present invention, it is feasible for the bridging portion to have a corner portion, the thickness of which along the oscillation region is smaller than the thickness of each of the two long-side straight portions at the central portion along the long side direction. In one embodiment of the sputtering apparatus of the present invention, it is feasible for the aforementioned bridging portion to include: the aforementioned corner portion connected to each of the aforementioned two long-side straight portions; and a short-side straight portion connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, extending along the aforementioned swing direction within the outline of the aforementioned swing area; and the thickness of the aforementioned short-side straight portion is substantially equal to the thickness of each of the aforementioned two long-side straight portions. In one embodiment of the sputtering apparatus of the present invention, it is feasible for the aforementioned bridging portion to include: the aforementioned corner portion connected to each of the aforementioned two long-side straight portions; and a short-side straight portion connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, extending along the aforementioned swing direction within the outline of the aforementioned swing region; and compared to the outer periphery shape of the aforementioned swing region formed by the extensions of the aforementioned short-side straight portions and the extensions of the aforementioned long-side straight portions, the aforementioned corner portion is closer to the aforementioned central magnet portion along the outer periphery of the aforementioned swing region. In one embodiment of the sputtering apparatus of the present invention, it is feasible for the aforementioned bridging portion to include: the aforementioned corner portion connected to each of the aforementioned two long-side straight portions; and a short-side straight portion connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, along the aforementioned swing direction in the outline of the aforementioned swing region; and the aforementioned corner portion is connected to the aforementioned short-side straight portion at a position closer to the aforementioned central portion along the aforementioned long-side direction than the end of the aforementioned swing region along the aforementioned swing direction in the outline of the aforementioned swing region. In one embodiment of the sputtering apparatus of the present invention, it is feasible for the aforementioned bridging portion to include: the aforementioned corner portion connected to each of the aforementioned two long-side straight portions; and a short-side straight portion connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, extending along the aforementioned swing direction in the outline of the aforementioned swing region; and the length of the aforementioned short-side straight portion along the aforementioned swing direction in the outline of the aforementioned swing region is shorter along the aforementioned swing region than the separation distance of the aforementioned long-side straight portion of the aforementioned central portion along the aforementioned swing direction in the aforementioned swing direction. In one embodiment of the sputtering apparatus of the present invention, it is feasible for the aforementioned bridging portion to include: the aforementioned corner portion connected to each of the aforementioned two long-side straight portions; and a short-side straight portion connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, along the aforementioned swing direction in the outline of the aforementioned swing region; and the length of the aforementioned corner portion in the aforementioned long-side direction is approximately equal to the distance between the aforementioned long-side straight portion and the aforementioned central portion along the aforementioned swing region and the aforementioned central magnet portion. In one embodiment of the sputtering apparatus of the present invention, it is feasible for the aforementioned bridging portion to include: the aforementioned corner portion connected to each of the aforementioned two long-side straight portions; and a short-side straight portion connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, extending along the aforementioned swing direction within the outline of the aforementioned swing region; and the separation distance between the ends of the aforementioned short-side straight portions and the aforementioned central magnet portion along the aforementioned swing region is formed to be smaller than the separation distance between the aforementioned long-side straight portions and the aforementioned central magnet portion along the aforementioned swing direction at the aforementioned central portion in the aforementioned long-side direction. In one embodiment of the sputtering apparatus of the present invention, it is feasible for the aforementioned bridging portion to include: the aforementioned corner portion connected to each of the aforementioned two long-side straight portions; and a short-side straight portion connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, extending along the aforementioned swing direction in the outline of the aforementioned swing region; and the aforementioned central magnet portion having an end portion in the aforementioned long-side direction; the aforementioned central magnet portion having a narrow portion in the aforementioned end portion, the thickness of the narrow portion along the aforementioned swing region being formed to be smaller than the aforementioned central portion in the aforementioned long-side direction. In one embodiment of the sputtering apparatus of the present invention, it is feasible for the aforementioned narrow portion of the aforementioned central magnet portion to be positioned closer to the aforementioned short-side straight portion in the aforementioned long-side direction than the aforementioned long-side straight portion. In one embodiment of the sputtering apparatus of the present invention, it is feasible that the aforementioned magnetic element has a shorter dimension along its long side compared to a structure that does not reduce the thickness of the aforementioned corner portion. In one embodiment of the sputtering apparatus of the present invention, it is feasible that a plurality of the aforementioned magnetic elements are arranged in parallel along the aforementioned oscillation direction.

One aspect of the sputtering apparatus of the present invention includes a cathode unit that emits sputtering particles onto a substrate having a substrate surface; the cathode unit comprises: a target for forming an etched region; a magnetic unit disposed opposite to the target and the substrate, forming the etched region on the target; and a magnetic unit scanning unit that, between a first oscillation end and a second oscillation end along the oscillation direction of the substrate surface, moves the magnetic unit and the substrate to form a film. Reciprocating motion relative to each other; forming a swing region between the first swing end and the second swing end; the swing region having: the outline edge of the long side of the magnetic element and the central portion of the long side of the magnetic element; the magnetic element extending along the surface of the substrate in a swing width direction intersecting the swing direction; and homogenizing the magnetic force density generated at the end of the swing region near the outline edge and the magnetic force density generated at the central portion of the swing region.

Based on the above configuration, magnetic field lines are formed at the ends of the long side of the magnetic element. In this state, a balance is achieved, uniformizing the magnetic field density of the two poles relative to the center of the long side. With this magnetic element, a magnetic field not inclined to the normal of the target can be formed between the magnetic element and the target. This reduces the number of electrons attracted to the anode. Therefore, it suppresses the absorption of plasma and the decrease in plasma density, as well as the increase in adjacent plasma density accompanying the decrease. This stabilizes the generated plasma, effectively reducing the boundary region between eroded and non-eroded areas. This reduces the generation of particles caused by the formation of the boundary region between eroded and non-eroded areas.

Simultaneously, it can form a state in which electrons and other surrounding electrons are completely encapsulated within the magnetic unit, allowing them to circulate along the racetrack shape without leakage to the outside. This prevents electron and plasma from concentrating and increasing in density at the long-side ends of the magnetic unit. Furthermore, it suppresses fluctuations in the supplied voltage and the plasma density near the long-side ends of the magnetic unit. Therefore, the magnetic unit can oscillate while maintaining a stable plasma generation state. This effectively suppresses deviations in film thickness distribution and film property distribution. Consequently, target lifetime can be extended, and particle generation can be easily suppressed.

In one embodiment of the sputtering apparatus of the present invention, it is feasible for the aforementioned magnetic unit to have: a first magnetic pole, i.e., a central magnet portion, which is arranged in a straight line and forms a magnetic boundary toward the aforementioned target; and a second magnetic pole, i.e., a peripheral magnet portion, which forms a magnetic boundary toward the aforementioned target and has a polarity different from that of the first magnetic pole; and the aforementioned peripheral magnet portion has two long-side straight sections and a bridging section; the aforementioned two long-side straight sections are located at the aforementioned central magnet portion. On both sides, it is equally spaced from the aforementioned central magnet and extends parallel to each other in the aforementioned long side direction; the aforementioned bridging portion connects the ends of the aforementioned two long side straight portions; the aforementioned peripheral magnet portion surrounds the aforementioned central magnet portion along the aforementioned swing area; the aforementioned magnetic force density generated in the aforementioned central portion of the aforementioned swing area and the aforementioned magnetic force density generated at the aforementioned ends of the aforementioned swing area are uniformized.

Based on the above configuration, magnetic field lines are formed at the ends of the long side of the magnetic element. In this state, mutual balance is achieved, uniformizing the magnetic field density of the two poles relative to the central portion of the long side. By arranging the central and peripheral magnets in a manner that uniformizes the magnetic field density, a magnetic field that is not inclined to the normal to the target surface can be formed between the magnetic element and the target. This reduces the number of electrons attracted to the anode. Therefore, plasma instability due to attraction is prevented, and plasma density is uniformized. This effectively reduces the boundary region between eroded and non-eroded areas. This also reduces the generation of particles caused by the formation of the boundary region between eroded and non-eroded areas.

Simultaneously, it can form a state where the surrounding electrons are completely encapsulated by the magnetic unit, causing them to circulate along the racetrack shape and preventing leakage to the outside at the long side end of the magnetic unit. This prevents the concentration of electrons and plasma at the long side end of the magnetic unit, thus preventing increased density. It also suppresses fluctuations in the supplied voltage and the plasma density near the long side end of the magnetic unit. The magnetic unit can oscillate while maintaining a stable plasma generation state. It can effectively suppress deviations in film thickness distribution and film property distribution. This extends target lifetime and easily suppresses particle generation.

In one aspect of the sputtering apparatus of the present invention, the aforementioned bridge portion has a corner portion, and the thickness of the aforementioned corner portion along the aforementioned swing area is smaller than the thickness of each of the aforementioned central portion and the aforementioned two long-side straight portions in the aforementioned long-side direction.

According to the above configuration, electrons orbit in a racetrack shape at the end of the long side of the magnetic unit. Along the electron's trajectory, the central and peripheral magnets trap these electrons. This achieves a balance, uniformizing the magnetic field density through the central and peripheral magnets. Consequently, a magnetic field that is not skewed to the normal to the target surface is generated at the end of the long side of the magnetic unit. Therefore, the number of electrons attracted to the anode is reduced, and the increase in adjacent plasma density accompanying a decrease in plasma density is suppressed. Thus, plasma stabilization is achieved.

Simultaneously, the surrounding electrons can be completely encapsulated at the long-side end of the magnetic unit using a central and peripheral magnet. This creates a racetrack-shaped path for the captured electrons, preventing leakage to the outside. This prevents electron and plasma from concentrating and increasing in density at the long-side end of the magnetic unit. Furthermore, fluctuations in the supplied voltage suppress changes in plasma density near the long-side end of the magnetic unit. Therefore, the magnetic unit can oscillate while maintaining a stable plasma generation state. This effectively suppresses deviations in film thickness distribution and film property distribution. Consequently, target lifetime can be extended, and particle generation can be easily suppressed.

In one aspect of the sputtering apparatus of the present invention, the aforementioned bridging portion includes: the aforementioned corner portion, which is connected to each of the aforementioned two long-side straight portions; and a short-side straight portion, which is connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, and is located along the aforementioned swing direction in the outline of the aforementioned swing area; and the thickness of the aforementioned short-side straight portion is approximately equal to the thickness of each of the aforementioned two long-side straight portions.

According to the above configuration, electrons orbit in a racetrack shape at the end of the long side of the magnetic element. Along the electron's trajectory, corner portions and short straight sections trap the electrons. This achieves mutual balance, uniformizing the magnetic field density through the corner portions and short straight sections. Consequently, a magnetic field that is not skewed to the normal to the target surface can be generated at the end of the long side of the magnetic element. Therefore, the number of electrons attracted to the anode is reduced, and the increase in adjacent plasma density accompanying a decrease in plasma density is suppressed. Thus, plasma stabilization is achieved.

Simultaneously, electrons can be completely encapsulated at the long-side end of the magnetic unit through corner portions, short-side straight portions, and the central magnet portion. This creates a raceway-shaped path for the captured electrons, preventing leakage to the outside. This prevents electron and plasma density from concentrating and increasing at the long-side end of the magnetic unit. Furthermore, fluctuations in the supply voltage suppress changes in plasma density near the long-side end of the magnetic unit. Therefore, the magnetic unit can oscillate while maintaining a stable plasma state. This effectively suppresses deviations in film thickness distribution and film property distribution. This allows for the extension of target lifetime and easy suppression of particulate generation.

In one aspect of the sputtering apparatus of the present invention, the aforementioned bridging portion includes: the aforementioned corner portion, which is connected to each of the aforementioned two long-side straight portions; and a short-side straight portion, which is connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, along the aforementioned swing direction in the outline of the aforementioned swing area; and compared to the outer periphery shape of the aforementioned swing area formed by the extension lines of the aforementioned short-side straight portions and the extension lines of the aforementioned long-side straight portions, the aforementioned corner portion is closer to the aforementioned central magnet portion along the outer periphery of the aforementioned swing area.

According to the above configuration, electrons orbit in a racetrack shape at the end of the long side of the magnetic element. These electrons are captured at the corner and short straight-line portions. This achieves a balance, uniformizing the magnetic field density through the corner and short straight-line portions. Consequently, a magnetic field that is not skewed to the normal to the target surface is generated at the end of the long side of the magnetic element. Therefore, the number of electrons attracted to the anode is reduced, and the increase in adjacent plasma density accompanying a decrease in plasma density is suppressed. Thus, plasma stabilization is achieved. Here, by forming the corner portion close to the central magnet, a balanced configuration is achieved between the central magnet and the corner portion. Therefore, a stable magnetic field can be generated to trap electrons, causing them to swirl around.

Simultaneously, electrons can be completely encapsulated at the long-side end of the magnetic unit through corner portions, short-side straight portions, and the central magnet portion. This creates a raceway-shaped path for the captured electrons, preventing leakage to the outside. This prevents electron and plasma density from concentrating and increasing at the long-side end of the magnetic unit. Furthermore, fluctuations in the supply voltage suppress changes in plasma density near the long-side end of the magnetic unit. Therefore, the magnetic unit can oscillate while maintaining a stable plasma state. This effectively suppresses deviations in film thickness distribution and film property distribution. This allows for the extension of target lifetime and easy suppression of particulate generation.

In one aspect of the sputtering apparatus of the present invention, the aforementioned bridging portion includes: the aforementioned corner portion, which is connected to each of the aforementioned two long-side straight portions; and a short-side straight portion, which is connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, along the aforementioned swing direction in the outline of the aforementioned swing area; and the aforementioned corner portion is connected to the aforementioned short-side straight portion at a position closer to the aforementioned central portion along the aforementioned long-side direction than the end of the aforementioned swing area along the aforementioned swing direction in the outline of the aforementioned swing area.

According to the above configuration, electrons orbit in a racetrack shape at the long-side end of the magnetic element. These electrons are captured at the corners and the short-side straight sections. This achieves a balance, uniformizing the magnetic field density through the corners and short-side straight sections. Consequently, a magnetic field that is not skewed to the normal to the target surface is generated at the long-side end of the magnetic element. Therefore, the number of electrons attracted to the anode is reduced, and the increase in adjacent plasma density accompanying a decrease in plasma density is suppressed. Thus, plasma stabilization is achieved. Here, by connecting the corner section near the central magnet, a balanced configuration between the peripheral and central magnets is achieved. This generates a stable magnetic field that traps electrons, causing them to circulate.

Simultaneously, electrons can be completely encapsulated at the long-side end of the magnetic unit through corner portions, short-side straight portions, and the central magnet portion. This creates a raceway-shaped path for the captured electrons, preventing leakage to the outside. This prevents electron and plasma density from concentrating and increasing at the long-side end of the magnetic unit. Furthermore, fluctuations in the supply voltage suppress changes in plasma density near the long-side end of the magnetic unit. Therefore, the magnetic unit can oscillate while maintaining a stable plasma state. This effectively suppresses deviations in film thickness distribution and film property distribution. This allows for the extension of target lifetime and easy suppression of particulate generation.

In one aspect of the sputtering apparatus of the present invention, the aforementioned bridging portion includes: the aforementioned corner portion, which is connected to each of the aforementioned two long side straight portions; and a short side straight portion, which is connected to the two aforementioned corner portions connected to the aforementioned two long side straight portions, and extends along the aforementioned swing direction in the outline of the aforementioned swing area; and the length of the aforementioned short side straight portion along the aforementioned swing direction in the outline of the aforementioned swing area is shorter along the aforementioned swing area than the separation distance of the aforementioned long side straight portion of the aforementioned central portion along the aforementioned swing direction in the aforementioned swing direction.

According to the above configuration, electrons orbit in a racetrack shape at the end of the long side of the magnetic element. These electrons are captured at the corners and the short straight sections. This achieves a balance, uniformizing the magnetic field density through the corners and short straight sections. Consequently, a magnetic field that is not skewed to the normal to the target surface is generated at the end of the long side of the magnetic element. Therefore, the number of electrons attracted to the anode is reduced, and the increase in adjacent plasma density accompanying a decrease in plasma density is suppressed. Thus, plasma stabilization is achieved. Here, by configuring the length of the short straight section as described above, a balanced arrangement between the peripheral and central magnet sections is achieved. Therefore, a stable magnetic field can be generated to trap electrons, causing them to orbit around.

Simultaneously, electrons can be completely encapsulated at the long-side end of the magnetic unit through corner portions, short-side straight portions, and the central magnet portion. This creates a raceway-shaped path for the captured electrons, preventing leakage to the outside. This prevents electron and plasma density from concentrating and increasing at the long-side end of the magnetic unit. Furthermore, fluctuations in the supply voltage suppress changes in plasma density near the long-side end of the magnetic unit. Therefore, the magnetic unit can oscillate while maintaining a stable plasma state. This effectively suppresses deviations in film thickness distribution and film property distribution. This allows for the extension of target lifetime and easy suppression of particulate generation.

In one aspect of the sputtering apparatus of the present invention, the aforementioned bridging portion includes: the aforementioned corner portion, which is connected to each of the aforementioned two long-side straight portions; and a short-side straight portion, which is connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, along the aforementioned swing direction in the outline of the aforementioned swing area; and the length of the aforementioned corner portion in the aforementioned long-side direction is approximately equal to the separation distance between the aforementioned long-side straight portion and the aforementioned central portion in the aforementioned long-side direction along the aforementioned swing area and the aforementioned central magnet portion.

According to the above configuration, electrons orbit in a racetrack shape at the end of the long side of the magnetic element. These electrons are captured at the corners and the short straight sections. This achieves a balance, uniformizing the magnetic field density through the corners and short straight sections. Consequently, a magnetic field that is not skewed to the normal to the target surface is generated at the end of the long side of the magnetic element. Therefore, the number of electrons attracted to the anode is reduced, and the increase in adjacent plasma density accompanying a decrease in plasma density is suppressed. Thus, plasma stabilization is achieved. Here, by specifying the length of the corners as described above, a balanced configuration between the peripheral and central magnet sections is achieved. Therefore, a stable magnetic field can be generated to trap electrons, causing them to orbit around.

Simultaneously, electrons can be completely encapsulated at the long-side end of the magnetic unit through corner portions, short-side straight portions, and the central magnet portion. This creates a raceway-shaped path for the captured electrons, preventing leakage to the outside. This prevents electron and plasma density from concentrating and increasing at the long-side end of the magnetic unit. Furthermore, fluctuations in the supply voltage suppress changes in plasma density near the long-side end of the magnetic unit. Therefore, the magnetic unit can oscillate while maintaining a stable plasma state. This effectively suppresses deviations in film thickness distribution and film property distribution. This allows for the extension of target lifetime and easy suppression of particulate generation.

In one embodiment of the sputtering apparatus of the present invention, the aforementioned bridging portion includes: the aforementioned corner portion, which is connected to each of the aforementioned two long-side straight portions; and a short-side straight portion, which is connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, along the aforementioned swing direction in the outline of the aforementioned swing region; and the separation distance between the aforementioned short-side straight portion and the end of the aforementioned central magnet portion along the aforementioned swing region is formed to be smaller than the separation distance between the aforementioned long-side straight portion and the aforementioned central magnet portion along the aforementioned swing direction at the aforementioned central portion in the aforementioned long-side direction.

According to the above configuration, electrons orbit in a racetrack shape at the long-side end of the magnetic element. These electrons are captured at the corners and the short-side straight sections. This achieves a balance, uniformizing the magnetic field density through the corners and short-side straight sections. Consequently, a magnetic field that is not skewed to the normal to the target surface is generated at the long-side end of the magnetic element. Therefore, the number of electrons attracted to the anode is reduced, and the increase in adjacent plasma density accompanying a decrease in plasma density is suppressed. Thus, plasma stabilization is achieved. Here, the above configuration achieves a balanced arrangement between the peripheral magnet section and the central magnet section. Therefore, a stable magnetic field can be generated to trap electrons, causing them to orbit around.

Simultaneously, electrons can be completely encapsulated at the long-side end of the magnetic unit through corner portions, short-side straight portions, and the central magnet portion. This creates a raceway-shaped path for the captured electrons, preventing leakage to the outside. This prevents electron and plasma density from concentrating and increasing at the long-side end of the magnetic unit. Furthermore, fluctuations in the supply voltage suppress changes in plasma density near the long-side end of the magnetic unit. Therefore, the magnetic unit can oscillate while maintaining a stable plasma state. This effectively suppresses deviations in film thickness distribution and film property distribution. This allows for the extension of target lifetime and easy suppression of particulate generation.

In one embodiment of the sputtering apparatus of the present invention, the aforementioned bridging portion includes: the aforementioned corner portion, which is connected to each of the aforementioned two long-side straight portions; and a short-side straight portion, which is connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, along the aforementioned swing direction in the outline of the aforementioned swing area; and the aforementioned central magnet portion has an end portion in the aforementioned long-side direction; the aforementioned central magnet portion has a narrow portion in the aforementioned end portion, and the thickness of the narrow portion along the aforementioned swing area is formed to be smaller than the aforementioned central portion in the aforementioned long-side direction.

According to the above configuration, electrons orbit in a racetrack shape at the end of the long side of the magnetic element. These electrons are captured at the corners and the short straight sections. This achieves a balance, uniformizing the magnetic field density through the corners and short straight sections. Consequently, a magnetic field that is not skewed to the normal to the target surface is generated at the end of the long side of the magnetic element. Therefore, the number of electrons attracted to the anode is reduced, and the increase in adjacent plasma density accompanying a decrease in plasma density is suppressed. Thus, plasma stabilization is achieved. Here, by reducing the thickness of the corners as described above, a balanced configuration between the peripheral and central magnet sections is achieved. Therefore, a stable magnetic field can be generated to trap electrons, causing them to orbit around.

Simultaneously, electrons can be completely encapsulated at the long-side end of the magnetic unit through corner portions, short-side straight portions, and the central magnet portion. This creates a raceway-shaped path for the captured electrons, preventing leakage to the outside. This prevents electron and plasma density from concentrating and increasing at the long-side end of the magnetic unit. Furthermore, fluctuations in the supply voltage suppress changes in plasma density near the long-side end of the magnetic unit. Therefore, the magnetic unit can oscillate while maintaining a stable plasma state. This effectively suppresses deviations in film thickness distribution and film property distribution. This allows for the extension of target lifetime and easy suppression of particulate generation.

In one aspect of the sputtering apparatus of the present invention, the aforementioned narrow portion of the central magnet is positioned in the long side direction closer to the short side line portion than the long side line portion.

According to the above configuration, electrons orbit in a racetrack shape at the long-side end of the magnetic element. These electrons are captured at the corners and the short-side straight sections. This achieves a balance, uniformizing the magnetic field density through the corners and short-side straight sections. Consequently, a magnetic field that is not skewed to the normal to the target surface is generated at the long-side end of the magnetic element. Therefore, the number of electrons attracted to the anode is reduced, and the increase in adjacent plasma density accompanying a decrease in plasma density is suppressed. Thus, plasma stabilization is achieved. Here, the above configuration achieves a balanced arrangement between the peripheral magnet section and the central magnet section. Therefore, a stable magnetic field can be generated to trap electrons, causing them to orbit around.

Simultaneously, electrons can be completely encapsulated at the long-side end of the magnetic unit through corner portions, short-side straight portions, and the central magnet portion. This creates a raceway-shaped path for the captured electrons, preventing leakage to the outside. This prevents electron and plasma density from concentrating and increasing at the long-side end of the magnetic unit. Furthermore, fluctuations in the supply voltage suppress changes in plasma density near the long-side end of the magnetic unit. Therefore, the magnetic unit can oscillate while maintaining a stable plasma state. This effectively suppresses deviations in film thickness distribution and film property distribution. This allows for the extension of target lifetime and easy suppression of particulate generation.

In one aspect of the sputtering apparatus of the present invention, the aforementioned magnetic element has a shorter dimension in the long side direction compared to the structure in which the thickness of the aforementioned corner portion is not reduced.

Based on the above configuration, compared to a structure where the thickness of the corner portion is not reduced at the end of the long side of the magnetic element, the peak position of the horizontal magnetic field formed by the magnetic element can be shifted outward along the long side. This allows for a reduction in the long side dimension of the magnetic element relative to a target subjected to sputtering treatment over an etched area of the same size. Consequently, target lifetime can be extended, and particle generation can be easily suppressed.

In one aspect of the sputtering apparatus of the present invention, the aforementioned magnetic units are arranged in a plurality of parallel configurations in the aforementioned oscillation direction.

According to the above configuration, electrons orbit in a racetrack shape at the ends of the long sides of each of the oscillating plurality of magnetic units. Each of the plurality of magnetic units traps these electrons. This achieves mutual balance, thus homogenizing the magnetic field density. The magnetic units can oscillate while maintaining a stable plasma generation state. Consequently, at the ends of the long sides of each of the plurality of magnetic units, a magnetic field not inclined to the normal to the target surface can be generated between the magnetic unit and the target. Therefore, at the ends of all the magnetic units, the number of electrons attracted to the anode can be reduced, and the increase in adjacent plasma density accompanying a decrease in plasma density can be suppressed. Therefore, plasma can be stabilized within the entire target.

Simultaneously, electrons can be completely encapsulated at the ends of all magnetic units along their long sides through corner portions, short straight portions, and the central magnet portion. This creates a state where the captured electrons orbit along a racetrack shape, preventing leakage to the outside. This prevents electron and plasma from concentrating and increasing in density at the ends of all magnetic units along their long sides. Furthermore, fluctuations in the supply voltage and plasma density near the ends of the magnetic units along their long sides can be suppressed throughout the oscillation region. Therefore, the magnetic units can oscillate while maintaining a stable plasma state. This effectively suppresses deviations in film thickness distribution and film property distribution. This extends target lifetime and easily suppresses particle generation. [Effects of the Invention]

According to this invention, the required magnetic flux density can be maintained, thereby maintaining plasma density. The generation of unclear regions surrounding non-corrosive areas can be suppressed. It aims to reduce particle size and stabilize the formed plasma distribution, improving the uniformity of film thickness distribution and film thickness characteristics regardless of the oscillation position of the magnetic unit. It can extend target lifetime.

<First Embodiment> The first embodiment of the sputtering apparatus of the present invention will now be described based on the drawings. Figure 1 is a schematic top view showing the sputtering apparatus of the present embodiment. Figure 2 is a schematic side view showing the film-forming chamber of the sputtering apparatus of the present embodiment. In the figures, symbol 1 represents the sputtering apparatus.

The sputtering apparatus 1 of this embodiment is used, for example, in the manufacturing process of semiconductor devices, or in the manufacturing process of FPDs (flat panel displays) such as liquid crystal displays and organic EL displays, to form TFTs (Thin Film Transistors) on a substrate made of glass or the like. The sputtering apparatus 1 of this embodiment is a reciprocating vacuum processing apparatus that performs heating, film formation, and etching processes on a substrate made of glass or resin in a vacuum gas environment.

In this embodiment, the glass substrate (film-forming substrate, transparent substrate) 11 can be a rectangular substrate with a side length of about 100 mm to more than 2500 mm. Furthermore, in this embodiment, substrates with a thickness of less than 1 mm, substrates with a thickness of several mm, or substrates with a thickness of more than 10 mm can also be used.

The sputtering apparatus 1 of this embodiment, as shown in Figure 1, comprises: a loading/unloading chamber (vacuum chamber) 2, a film-forming chamber (vacuum chamber) 4, and a transport chamber (vacuum chamber) 3. The loading/unloading chamber 2 loads/unloads a generally rectangular glass substrate 11 (the substrate to be processed) between itself and the outside. The film-forming chamber 4 is a pressure-resistant vacuum chamber on which a film of, for example, a _transparent conductive film based on ZnO or _In₂O₃ , a metal or oxide such as aluminum or silver, or other metals, is formed on the glass substrate 11 by sputtering. The transport chamber 3 is located between the film-forming chamber 4 and the loading/unloading chamber 2. The transport chamber 3 transports the glass substrate 11 between the film-forming chamber 4 and the loading/unloading chamber 2 (vacuum chamber).

The sputtering apparatus 1 of this embodiment can be configured as a side-sputtering apparatus as shown in FIG. 1. Alternatively, the sputtering apparatus 1 of this embodiment can be configured as a downward sputtering apparatus as shown in FIG. 2. Furthermore, it can also be configured as an upward sputtering apparatus.

Furthermore, a film-forming chamber (vacuum chamber) 4A and a loading/unloading chamber (vacuum chamber) 2a can be provided in the sputtering apparatus 1. These plurality of chambers, namely the loading/unloading chamber 2, the loading/unloading chamber 2a, the film-forming chamber 4, and the film-forming chamber 4A, are arranged to surround the transport chamber 3. The sputtering apparatus 1 having these chambers is, for example, composed of two loading/unloading chambers (vacuum chambers) arranged adjacent to each other, and a plurality of processing chambers (vacuum chambers).

For example, one loading/unloading chamber 2 is a loading chamber for transporting the glass substrate 11 into the sputtering apparatus 1 (vacuum treatment apparatus) from the outside. Another loading/unloading chamber 2a is an unloading chamber for transporting the glass substrate 11 out from the inside of the sputtering apparatus 1. Furthermore, the sputtering process in the film-forming chamber 4 and the film-forming chamber 4A can be different. Also, the sputtering process in the film-forming chamber 4 and the film-forming chamber 4A can be different. For example, the sputtering apparatus 1 can be configured such that one of the film-forming chambers 4 and 4A is a side-sputtering type film-forming chamber and the other is a downward-sputtering type film-forming chamber.

A partition valve (gate valve) can be installed between the conveying chamber 3 and the loading/unloading chamber 2. Similarly, a partition valve (gate valve) can be installed between the conveying chamber 3 and the loading/unloading chamber 2a. A partition valve (gate valve) can be installed between the conveying chamber 3 and the film-forming chamber 4. A partition valve (gate valve) can be installed between the conveying chamber 3 and the film-forming chamber 4A.

A positioning component can be configured in the loading/unloading chamber 2 to set and align the placement position of the glass substrate 11 brought in from outside the sputtering apparatus 1. A coarse vacuum evacuation device (coarse vacuum evacuation device, low vacuum evacuation device) such as a rotary pump is installed in the loading/unloading chamber 2 to perform coarse vacuum evacuation. The coarse vacuum evacuation device can depressurize the internal space of the loading/unloading chamber 2.

As shown in Figure 1, a conveying device (conveying robot) 3a is arranged inside the conveying chamber 3. The conveying device 3a includes: a rotating shaft; a rotating drive device that drives the rotating shaft to rotate; a robot arm mounted on the rotating shaft; a robot hand formed at one end of the robot arm; and a vertical movement device that moves the robot hand vertically. The robot arm is composed of a first arm and a second arm, which are orthogonal to each other and can slide horizontally respectively. The conveying device 3a allows the conveyed object, i.e., the glass substrate 11, to move between the loading/unloading chamber 2, the loading/unloading chamber 2a, the film forming chamber 4, the film forming chamber 4A, and the conveying chamber 3.

As shown in FIG. 1, the film-forming chamber 4 includes: a cathode device 10; a substrate holding section 13, which is a substrate holder equipped with a shield, etc.; and a gas control section 14, which includes a gas inlet device (gas inlet section) and a high-vacuum exhaust device (high-vacuum exhaust section). The interior of the film-forming chamber 4, as shown in FIG. 1, consists of a front space 41 that exposes the front side of the glass substrate 11 during film formation, and a rear space 42 located on the back side of the glass substrate 11 during film formation. The cathode device 10 is disposed in the front space 41.

The cathode device 10 is vertically mounted inside the side-splashing film-forming chamber 4 shown in Figure 1, at the position furthest from the transfer port 4a connected to the transfer chamber 3. Furthermore, the cathode device 10 is disposed inside the downward-splashing film-forming chamber 4 shown in Figure 2, above the glass substrate 11 which is being transported from the transfer port 4a to the horizontal position of the transfer chamber 3, and facing it parallel to the glass substrate 11. Here, a mask 20 can be disposed around the film-forming port 4b.

A substrate holding section (substrate holding mechanism) 13 is disposed within the rear space 42 as shown in FIG. 1 or FIG. 2. The substrate holding section 13 supports the glass substrate 11 fed in through the transfer port 4a. As shown in FIG. 1, the substrate holding section 13 holds the glass substrate 11 with the target 23 (described later) facing the treated surface (film-forming surface) 11a of the glass substrate 11 during film formation. During film formation, the substrate holding section 13 holds the glass substrate 11 in a longitudinal position opposite to the vertically positioned cathode device 10.

The substrate holding portion 13 (substrate holding device) holds the glass substrate 11 in a manner facing the target 23 (described later) and the treated surface (film-forming surface) 11a of the glass substrate 11 during film formation, as shown in FIG. 2. During film formation, the substrate holding portion 13 holds the glass substrate 11 in a horizontal position facing the downward-facing cathode device 10. The substrate holding portion 13 may be provided inside the side-splashing film-forming chamber 4 shown in FIG. 1, comprising: a oscillating shaft extending substantially parallel to at least one of the transport port 4a and the film-forming port 4b, located below the rear space 42; and a holding portion mounted on the oscillating shaft and holding the back surface of the glass substrate 11.

The gas inlet device (gas inlet unit) in the gas control unit 14 introduces gas into the interior of the film-forming chamber 4. The high vacuum exhaust device (high vacuum exhaust unit) in the gas control unit 14 is a turbine molecular pump or the like that performs high vacuum extraction inside the film-forming chamber 4.

The cathode device 10, located inside the side-splashing film deposition chamber 4 shown in FIG. 1, can swing horizontally along the main surface of the glass substrate 11 relative to the film deposition position (plasma treatment position) inside the film deposition chamber 4. In this case, the cathode device 10 can be configured as a box shape, referred to as a cathode box. The cathode device 10, located inside the downward-splashing film deposition chamber 4 shown in FIG. 2, can swing horizontally along the main surface of the glass substrate 11 relative to the film deposition position (plasma treatment position) inside the film deposition chamber 4.

In the following description, the cathode device 10 inside the side-splashing film-forming chamber 4 shown in FIG1 will be described. However, the oscillation direction is different. The cathode device 10 inside the downward-splashing film-forming chamber 4 shown in FIG2 can also adopt the same configuration.

Figure 3 is a schematic diagram showing the positional relationship between the glass substrate and the cathode device in the sputtering apparatus of this embodiment. The cathode device 10, as shown in Figure 3, has one cathode unit 22. The cathode unit 22 is arranged along the ZX plane facing the front side of the glass substrate 11, as shown in Figure 3. In the cathode unit 22, the target 23, the back plate 24, and a plurality of magnetic element units 25 are arranged sequentially in the Y direction away from the position closest to the glass substrate 11.

Furthermore, in Figure 3, the cathode device 10 is described as a longitudinally oriented structure with the target 23 standing vertically, substantially parallel to the glass substrate 11, according to the side sputtering method shown in Figure 1. Moreover, in this embodiment, the downward sputtering method shown in Figure 2 allows for the same configuration even when the glass substrate 11 is horizontally positioned below the target 23 and downwardly deposited. This can be achieved by correspondingly changing the XYZ directions.

Figure 4 is a front view showing the positional relationship between the glass substrate, target, and magnetic element of the sputtering apparatus of this embodiment. The target 23 is configured as a flat plate along the ZX plane opposite to the glass substrate 11. The target 23 is exposed on the surface of the cathode box at the position opposite to the glass substrate 11.

As shown in Figure 4, the target 23 has a width in the Z direction that is longer than that of the glass substrate 11. Furthermore, the target 23 has a width in the swing direction (X direction) that is larger than that of the glass substrate 11. An anode 28 is disposed around the target 23. The anode 28 is disposed around the entire circumference of the target 23. The anode 28 covers the backplate 24 exposed from the target 23 relative to the glass substrate 11.

The backplate 24 is formed as a flat plate along the ZX plane facing the glass substrate 11. The backplate 24 is bonded to the side of the target 23 that does not face the glass substrate 11. A control unit 26 with a DC power supply is connected to the backplate 24. DC power supplied from the DC power supply is supplied to the target 23 via the backplate 24. A DC power supply, pulse power supply, or RF power supply can be used as the cathode power supply, replacing the DC power supply. The cathode unit 22 has the target 23 disposed along the ZX plane facing the film deposition surface 11a of the glass substrate 11. A plurality of magnetic elements 25 are disposed on the back side of the target 23 of the cathode unit 22, i.e., at a position opposite the target 23 near the backplate 24.

The plurality of magnetic elements 25 are multi-connected magnetic elements. The long side of the plurality of magnetic elements 25 is along the swing width direction, i.e., the Z direction. In other words, each of the plurality of magnetic elements 25 extends along the Z direction. The plurality of magnetic elements 25 are arranged parallel to each other along the ZX plane. The plurality of magnetic elements 25 are arranged along the front side of the glass substrate 11. In the X direction, the plurality of magnetic elements 25 are arranged at equal intervals.

In this embodiment, for example, nine magnetic elements 25 are arranged adjacent to each other in the X direction. The number of magnetic elements 25 can be appropriately set according to the area of the glass substrate 11 and the area of the target 23, or the swing range of the magnetic elements 25 described later. Furthermore, in the cathode element 22 of this embodiment, the target 23 is fixedly arranged opposite to the glass substrate 11. The target 23 is fixed to the film formation chamber 4.

A plurality of magnetic element units 25 each form a magnetic circuit. Each magnetic element unit 25 generates a magnetron magnetic field on the surface 23a of the target 23 facing the glass substrate 11. The plurality of magnetic element units 25 can be configured to form a predetermined magnetic circuit by combining permanent magnets. Each of the plurality of magnetic element units 25 can be individually connected to the control unit 26, enabling control over the state of the magnetic field generated individually.

Figure 5 is an enlarged cross-sectional view showing the end of the magnetic element of the sputtering apparatus of this embodiment. Figure 6 is an enlarged front view showing the end of the magnetic element of the sputtering apparatus of this embodiment. Hereinafter, one of the plurality of magnetic elements 25 will be described. The magnetic element 25, as shown in Figures 4 to 6, has a yoke 31, a central magnet portion 50, and a peripheral magnet portion 60.

The axle 31 is a flat, plate-shaped magnetic base with a generally rectangular outline. The axle 31 has a central region 25a on its surface. The central magnet 50 is a rod-shaped composite magnet extending along the Z direction (long side direction). The central magnet 50 is positioned centrally in the X direction within the central region 25a of the axle 31. The central magnet 50 is arranged in a generally straight line along the Z direction. The central magnet 50 forms the first magnetic pole of the magnetic field towards the target 23. The peripheral magnet 60 is separated from the central magnet 50 in the plane of the axle 31. The peripheral magnet 60 is arranged around the central magnet 50. The peripheral magnet portion 60 is a roughly oblong toroidal magnet arranged along the ZX plane. The peripheral magnet portion 60 is a second magnetic pole that forms a magnetic boundary with the target 23 and has a polarity different from the first magnetic pole. In the following description, the first and second magnetic poles are sometimes simply referred to as the two magnetic poles.

Each of the central magnet section 50 and the peripheral magnet section 60 has a pole face (pole plane) 30 facing the Y direction. In other words, each of the central magnet section 50 and the peripheral magnet section 60 has a pole face 30 along the ZX plane. The polarities of the central magnet section 50 and the peripheral magnet section 60 are different. That is, when the first pole constituting the central magnet section 50 is the N pole, the second pole constituting the peripheral magnet section 60 is the S pole. Conversely, when the first pole is the S pole, the second pole is the N pole. The central magnet section 50 and the peripheral magnet section 60 constitute a magnetic circuit. The central magnet 50 and the peripheral magnet 60 form parallel regions parallel to each other in the central region 25a of the long side direction (Z direction) of the magnetic unit 25.

The central magnet section 50 is divided into a plurality of parts along the Z direction. Each of the divided magnets in the central magnet section 50 is arranged adjacent to each other in the Z direction. The central magnet section 50 is composed of a plurality of magnet rods arranged in a circular pattern. In other words, the central magnet section 50 has a plurality of centrally divided magnets.

Similarly, the peripheral magnet section 60 is divided into a plurality of segments along the Z and X directions, extending in a ring shape. Each segmented magnet of the peripheral magnet section 60 is arranged adjacent to each other in the Z and X directions. In other words, the peripheral magnet section 60 has a plurality of peripherally segmented magnets. The peripheral magnet section 60 is configured by arranging a plurality of magnets in a ring. The peripheral magnet section 60 is arranged in an oblong shape in the ZX plane, in other words, a racetrack shape. Alternatively, the peripheral magnet section 60 has a shape in the ZX plane that is approximately rectangular with rounded corners.

Here, an oblong shape refers to the shape of a circle divided into two on a plane, separated in a direction orthogonal to the dividing line and connected by two parallel straight lines, with the ends of the two dividing lines facing each other. Alternatively, a runway shape refers to the outline shape of a rectangle with rounded corners, and the rounded corners are rounded to the extent that the shorter side disappears.

The peripheral magnet section 60, as shown in Figures 5 and 6, has a first long-side straight section 61, a second long-side straight section 62, and a bridging section 63. That is, the peripheral magnet section 60 has two long-side straight sections. Each of the first long-side straight sections 61 and 62 is a portion of the peripheral magnet section 60 extending along the Z-direction. The first long-side straight sections 61 and 62 are located on either side of the central magnet section 50 in the ZX plane, parallel to each other, and extending along the Z-direction. In the X-direction, the separation distance between the first long-side straight sections 61 and 62 spans the total length in the Z-direction. The first long-side straight sections 61 and 62 are arranged at equal intervals in the X-direction, spanning the total length in the Z-direction.

The total lengths of the first long-side straight section 61 and the second long-side straight section 62 in the Z direction are equal. The first long-side straight section 61 and the second long-side straight section 62 are positioned equally in the Z direction. The width of the first long-side straight section 61 and the total length in the Z direction are equal. The outer peripheral surface (outer peripheral portion) 61d of the first long-side straight section 61 and the outer peripheral surface (outer peripheral portion) 62d of the second long-side straight section 62 are arranged along the Z-direction edge of the outer peripheral contour of the axle 31.

The Z-direction position of the end face 61a of the first long side straight section 61 is the same as the Z-direction position of the end face 62a of the second long side straight section 62. The inner circumferential surface 61c of the first long side straight section 61 and the inner circumferential surface 62c of the second long side straight section 62 face each other parallel to each other. The inner circumferential surface 61c of the first long side straight section 61 and the inner circumferential surface 62c of the second long side straight section 62 are each formed along the ZY plane.

The bridging portion 63 bridges the end of the first long side straight section 61 in the Z direction and the end of the second long side straight section 62 in the Z direction. The bridging portion 63 is disposed at the end of the magnetic unit 25 in the Z direction. The bridging portion 63 extends from the end 61a of the first long side straight section 61 in the Z direction, bends in the X direction, then bends again in the Z direction, and connects to the end 62a of the second long side straight section 62. In other words, the bridging portion 63 has a first bent portion connected to the end 61a and a second bent portion connected to the end 62a. The bridge portion 63 is included in the end portion 25b, which is located further outward in the Z direction than the central portion 25a.

The bridging portion 63 includes a first corner portion 65, a second corner portion 64, and a short-side straight portion 66. The first corner portion 65 is connected to the end 61a of the first long-side straight portion 61. The second corner portion 64 is connected to the end 62a of the second long-side straight portion 62. The short-side straight portion 66 connects the two second corner portions 64 and the first corner portion 65. The short-side straight portion 66 extends along the X direction. The bridging portion 63 corresponds to a semi-circular portion of an elongated oval shape.

The short-side straight section 66 has a generally rectangular outline when viewed in the Y direction. The outer peripheral surface 66d of the short-side straight section 66 is positioned along the end of the axis 31 in the Z direction. The short-side straight section 66 is positioned at its center in the X direction, opposite the end of the axis 31 in the Z direction. The width of the short-side straight section 66 in the Z direction is approximately equal to the width of the first long-side straight section 61 and the second long-side straight section 62 in the X direction. Alternatively, the width of the short-side straight section 66 in the Z direction is slightly larger than the width of the first long-side straight section 61 and the second long-side straight section 62 in the X direction.

The short-side straight portion 66 is formed as a generally straight line along the X direction. In the X direction, the length of the short-side straight portion 66 is approximately the same as the distance between the first long-side straight portion 61 and the second long-side straight portion 62. That is, the position of the end face 66a of the short-side straight portion 66 in the X direction is approximately aligned with the inner circumferential surface 61c of the first long-side straight portion 61. The end face 66a of the short-side straight portion 66 in the X direction and the inner circumferential surface 61c of the first long-side straight portion 61 are on the same plane. Similarly, the position of the end face 66b of the short-side straight portion 66 in the X direction is approximately aligned with the inner circumferential surface 62c of the second long-side straight portion 62. The end face 66b of the short-side straight portion 66 in the X direction and the inner circumferential surface 62c of the first long-side straight portion 61 are on the same plane.

Alternatively, in the X direction, the length of the short side straight portion 66 is slightly smaller than the distance between the first long side straight portion 61 and the second long side straight portion 62 of the central region 25a. That is, the position of the end 66a of the short side straight portion 66 in the X direction is closer to the central magnet portion 50 than the inner circumferential surface 61c of the first long side straight portion 61. Similarly, the position of the end 66b of the short side straight portion 66 in the X direction is closer to the central magnet portion 50 than the inner circumferential surface 62c of the second long side straight portion 62.

One end of the first corner portion 65 is connected to the end 61a of the first long side straight portion 61. The other end of the first corner portion 65 is connected to the inner circumferential surface 66c of the short side straight portion 66. That is, the first corner portion 65 is connected to the end 61a of the first long side straight portion 61 at a position closer to the center of the Z direction in the outline of the swing region relative to the end 66a of the short side straight portion 66 along the swing direction. The other end of the first corner portion 65 is connected to the inner circumferential surface 66c of the end 66a of the short side straight portion 66 in the X direction closer to the central magnet portion 50.

The first corner section 65 is composed of three magnets, each having a square outline when viewed in the Y direction. That is, the first corner section 65 is composed of a first corner magnet 651, a second corner magnet 652, and a third corner magnet 653. Each of the first corner magnet 651, the second corner magnet 652, and the third corner magnet 653 has the same outline shape when viewed in the Y direction.

One end of the first angle magnet 651 in the Z-direction is connected to the end 61a of the first long side straight section 61. The entire surface of one end of the first angle magnet 651 in the Z-direction is connected to the end 61a of the first long side straight section 61. The other end of the first angle magnet 651 in the Z-direction is connected to the second angle magnet 652. One end of the second angle magnet 652 in the Z-direction is connected to the first angle magnet 651. Half of the width of the second angle magnet 652 in the X-direction is connected to the first angle magnet 651. The other end of the second angle magnet 652 in the Z-direction is connected to the third angle magnet 653. One end of the third angle magnet 653 in the Z direction is connected to the second angle magnet 652. Half of the width of the third angle magnet 653 in the X direction is connected to the second angle magnet 652. The other end of the third angle magnet 653 in the Z direction is connected to the inner circumferential surface 66c of the short side straight section 66. Half of the width of the third angle magnet 653 in the X direction is connected to the inner circumferential surface 66c of the short side straight section 66. Half of the width of the third angle magnet 653 in the X direction protrudes from the end 66a of the short side straight section 66.

The inner circumferential surface (inner circumferential portion) 651b of the first corner magnet 651 and the inner circumferential surface 61c of the first long-side straight portion 61 are on the same plane. The outer circumferential surface (outer circumferential portion) 651a of the first corner magnet 651 is closer to the central magnet 50 in the X direction than the outer circumferential surface 61d of the first long-side straight portion 61. The inner circumferential surface (inner circumferential portion) 652b of the second corner magnet 652 is closer to the central magnet 50 in the X direction than the inner circumferential surface 651b of the first corner magnet 651. The outer circumferential surface (outer circumferential portion) 652a of the second corner magnet 652 is closer to the central magnet 50 in the X direction than the outer circumferential surface 651a of the first corner magnet 651. The inner circumferential surface (inner circumferential portion) 653b of the third corner magnet 653 is closer to the central magnet 50 in the X direction than the inner circumferential surface 652b of the second corner magnet 652. The outer circumferential surface (outer circumferential portion) 653a of the third corner magnet 653 is closer to the central magnet 50 in the X direction than the outer circumferential surface 652a of the second corner magnet 652.

That is, on the outer peripheral surface of the first corner portion 65, a plurality of steps are formed in a direction that approaches the end face 66a of the short side line portion 66 from the outer peripheral surface 651a of the first long side line portion 61 towards the short side line portion 66 in the Z direction (inclined to the Z direction). Similarly, the inner peripheral surface of the first corner portion 65 is also formed in a manner that approaches the central magnet portion 50 from the first long side line portion 61 towards the central magnet portion 50 in the Z direction that approaches the short side line portion 66 in the Z direction (inclined to the Z direction).

The first corner portion 65 extends along the Z direction of the outer peripheral surface 61d of the first long side straight portion 61, and bends obliquely toward the X direction of the inner peripheral surface 66c of the short side straight portion 66. That is, the first corner portion 65 has a curved portion. The first corner portion 65 has the same width dimension in the X direction across its entire length including the curved portion. The width dimension of the first corner portion 65 in the X direction is smaller than the width dimension of the first long side straight portion 61 in the X direction. The width dimension of the first corner portion 65 in the X direction is smaller than the width dimension of the short side straight portion 66 in the Z direction.

The outer peripheral surface of the first corner portion 65 is more concave towards the inner side of the magnetic unit 25 than the outline of the axle 31. That is, the outer peripheral surface of the first corner portion 65 is more concave towards the inner side of the magnetic unit 25 than the outline of the imaginary rectangle formed by the plane extending the outer peripheral surface 61d of the first long side straight portion 61 in the Z direction and the plane extending the outer peripheral surface 66d of the short side straight portion 66 in the X direction. The outer peripheral surface of the first corner portion 65 is concave closer to the central magnet portion 50 than the outline of the imaginary rectangle of the magnetic unit 25.

The length of the first corner portion 65 in the Z direction is approximately equal to the distance between the central magnet portion 50 and the peripheral magnet portion 60 in the X direction, as described later. That is, in the Z direction, the distance between the end 61a of the first long side straight portion 61 and the inner peripheral surface 66c of the short side straight portion 66 is approximately equal to the distance between the central magnet portion 50 and the peripheral magnet portion 60 in the X direction of the central region 25a.

Like the first corner section 65, the second corner section 64 is composed of three magnets, each having a square outline when viewed in the Y direction. That is, the second corner section 64 is composed of a first corner magnet 641, a second corner magnet 642, and a third corner magnet 643. Each of the first corner magnet 641, the second corner magnet 642, and the third corner magnet 643 has the same outline shape when viewed in the Y direction.

One end of the first angle magnet section 641 in the Z-direction is connected to the end 62a of the second long-side straight section 62. The entire surface of one end of the first angle magnet section 641 in the Z-direction is connected to the end 62a of the second long-side straight section 62. The other end of the first angle magnet section 641 in the Z-direction is connected to the second angle magnet section 642. One end of the second angle magnet section 642 in the Z-direction is connected to the first angle magnet section 641. Half of the width of the second angle magnet section 642 in the X-direction is connected to the first angle magnet section 641. The other end of the second angle magnet section 642 in the Z-direction is connected to the third angle magnet section 643. One end of the third angle magnet 643 in the Z direction is connected to the second angle magnet 642. Half of the width of the third angle magnet 643 in the X direction is connected to the second angle magnet 642. The other end of the third angle magnet 643 in the Z direction is connected to the inner circumferential surface 66c of the short side straight section 66. Half of the width of the third angle magnet 643 in the X direction is connected to the inner circumferential surface 66c of the short side straight section 66. Half of the width of the third angle magnet 643 in the X direction protrudes from the end 66b of the short side straight section 66.

The inner circumferential surface (inner circumferential portion) 641b of the first corner magnet 641 and the inner circumferential surface 62b of the second long-side straight portion 62 are on the same plane. The outer circumferential surface (outer circumferential portion) 641a of the first corner magnet 641 is closer to the central magnet 50 in the X direction than the outer circumferential surface 62d of the second long-side straight portion 62. The inner circumferential surface (inner circumferential portion) 642b of the second corner magnet 642 is closer to the central magnet 50 in the X direction than the inner circumferential surface 641b of the first corner magnet 641. The outer circumferential surface (outer circumferential portion) 642a of the second corner magnet 642 is closer to the central magnet 50 in the X direction than the outer circumferential surface 641a of the first corner magnet 641. The inner circumferential surface (inner circumferential portion) 643b of the third corner magnet 643 is closer to the central magnet 50 in the X direction than the inner circumferential surface 642b of the second corner magnet 642. The outer circumferential surface (outer circumferential portion) 643a of the third corner magnet 643 is closer to the central magnet 50 in the X direction than the outer circumferential surface 642a of the second corner magnet 642.

That is, on the outer peripheral surface of the second corner portion 64, a plurality of steps are formed in a direction that approaches the end face 66a of the second long side straight portion 66 from the outer peripheral surface 641a of the second long side straight portion 62 toward the short side straight portion 66 in the Z direction (inclined to the Z direction). Similarly, the inner peripheral surface of the second corner portion 64 is formed with a plurality of steps in a direction that approaches the central magnet portion 50 from the second long side straight portion 62 in the Z direction that approaches the short side straight portion 66 in the Z direction (inclined to the Z direction).

The second corner portion 64 extends along the Z direction of the outer peripheral surface 62d of the second long side straight portion 62, and bends obliquely toward the X direction of the inner peripheral surface 66c of the short side straight portion 66. That is, the second corner portion 64 has a curved portion. The second corner portion 64 has the same width dimension in the X direction across its entire length including the curved portion. The width dimension of the second corner portion 64 in the X direction is smaller than the width dimension of the second long side straight portion 62 in the X direction. The width dimension of the second corner portion 64 in the X direction is smaller than the width dimension of the short side straight portion 66 in the Z direction.

The outer peripheral surface of the second corner portion 64 is more recessed toward the inner side of the magnetic unit 25 than the outline of the axle 31. That is, the outer peripheral surface of the second corner portion 64 is more recessed toward the inner side of the magnetic unit 25 than the outline of the imaginary rectangle formed by the plane extending the outer peripheral surface 62d of the second long side straight portion 62 in the Z direction and the plane extending the outer peripheral surface 66d of the short side straight portion 66 in the X direction. The outer peripheral surface of the second corner portion 64 is recessed closer to the central magnet portion 50 than the outline of the imaginary rectangle of the magnetic unit 25.

The length of the second corner portion 64 in the Z direction is approximately equal to the distance between the central magnet portion 50 and the peripheral magnet portion 60 in the X direction, as described later. That is, in the Z direction, the distance between the end 62a of the second long side straight portion 62 and the inner circumferential surface 66c of the short side straight portion 66 is approximately equal to the distance between the central magnet portion 50 and the peripheral magnet portion 60 in the X direction of the central region 25a.

The second corner section 64 and the first corner section 65 are formed symmetrically with respect to the central axis of the magnetic unit 25 (the dotted line shown in Figure 6). The second corner section 64 and the first corner section 65 are also formed symmetrically with respect to the central axis of the peripheral magnet section 60. The bridging section 63 is formed symmetrically with respect to the central axis of the magnetic unit 25. The dimension of the bridging section 63 in the Z direction is equal to the dimension obtained by summing the distance between the central magnet section 50 and the peripheral magnet section 60 in the X direction of the central region 25a, and the width of the short-side straight section 66 in the Z direction.

The first long-side straight section 61 is composed of a plurality of first-divided straight sections (magnets) of a predetermined length. The second long-side straight section 62 is composed of a plurality of second-divided straight sections (magnets) of a predetermined length. The peripheral magnet section 60 is formed by linearly combining a plurality of first-divided and a plurality of second-divided straight sections. Each of the plurality of divided straight sections constituting the first long-side straight section 61 and the second long-side straight section 62 is a permanent magnet. The bridging section 63 is formed by combining a second corner section 64, a first corner section 65, and a short-side straight section 66, each of a predetermined length. The magnets constituting the second corner section 64, the first corner section 65, and the short-side straight section 66 are permanent magnets.

The bridging portion 63 has a generally semi-circular shape. The thickness of the radial peripheral magnet portion 60 relative to the center of the semi-circle along the ZX plane will be explained. The thicknesses of the first long-side straight portion 61, the second long-side straight portion 62, and the short-side straight portion 66 are approximately equal. Compared to the thicknesses of the first long-side straight portion 61, the second long-side straight portion 62, and the short-side straight portion 66, the thicknesses of the second corner portion 64 and the first corner portion 65 are smaller. In the following explanation, the magnetic element whose thickness is reduced compared to the corner portions 64 and 65 is sometimes referred to as a "thickness-reduced magnetic element." Conversely, magnetic units whose thickness is not reduced compared to the thickness of the straight sections 61, 62, and 66, and the thickness of the corner sections 64 and 65, are sometimes referred to as "magnetic units whose thickness is not reduced."

As shown in Figures 5 and 6, the central magnet section 50 is formed in a straight line or rod shape in the Z direction. The central magnet section 50 is composed of a plurality of segmented central magnet sections (magnets) having a predetermined length. The central magnet section 50 is formed by linearly assembling the plurality of segmented central magnet sections. Each of the plurality of segmented central magnet sections constituting the central magnet section 50 is a permanent magnet. The central magnet section 50 is not in contact with the peripheral magnet section 60. The central magnet section 50 is separate from the peripheral magnet section 60.

The central magnet section 50 has a long straight section 51 and a narrow section 56. The narrow section 56 is located at the end of the central magnet section 50 in the Z direction.

The long-side straight section 51 is formed in the central region 25a as a straight line extending in the Z direction. The long-side straight section 51 is arranged parallel to the center of the magnetic unit 25 in the X direction, i.e., the central axis 25Z. The center position of the long-side straight section 51 extending in the Z direction, i.e., the center in the X direction, coincides with the central axis 25Z of the magnetic unit 25 in the Z direction. The long-side straight section 51 extends from the central region 25a toward the end region 25b. The portion of the long-side straight section 51 exposed in the end region 25b is formed as a straight line extending in the Z direction. The length of the long-side straight section 51 in the Z direction is equal to the lengths of the first long-side straight section 61 and the second long-side straight section 62 in the Z direction. The long-side straight section 51 is parallel to the first long-side straight section 61 and the second long-side straight section 62 in the central region 25a. The long side straight section 51 is parallel to the first long side straight section 61 and the second long side straight section 62 in the end region 25b.

The long side straight section 51 extends across the central region 25a and the portion exposed in the end region 25b. The width in the X direction is constant throughout the entire length of the long side straight section 51. The thickness of the long side straight section 51 along the X direction of the ZX plane is approximately equal to the thickness of the first long side straight section 61 and the second long side straight section 62 of the central region 25a, and the thickness of the short side straight section 66.

The narrow portion 56 is located in the end region 25b. Viewed in the Y direction, the narrow portion 56 has a rectangular outline. The width of the narrow portion 56 in the X direction is smaller than the width of the long side straight portion 51 of the central region 25a in the X direction. The width of the narrow portion 56 in the X direction is approximately 10% to 20% smaller than the width of the long side straight portion 51 of the central region 25a in the X direction. The narrow portion 56 is connected to the end face 51a of the long side straight portion 51 in the Z direction. The narrow portion 56 is positioned at the center of the end face 51a of the long side straight portion 51 in the X direction. That is, the end face 51a of the long side straight portion 51 has portions at both ends in the X direction that are not connected to the narrow portion 56.

The narrow portion 56 has an end face (end point) 56c that connects to the end point 51a of the long side straight portion 51. The end face (end point) 56c is formed on the same plane as the end face 61a of the first long side straight portion 61 and the end face 62a of the second long side straight portion 62. In the Z-direction, the end face (end point) 56c of the narrow portion 56 is positioned at the same location as the first corner portion 65 connecting to the first long side straight portion 61. In the Z-direction, the narrow portion 56 is positioned closer to the short side straight portion 66 than the first long side straight portion 61 and the second long side straight portion 62.

The Z-direction dimension of the narrow portion 56 is approximately half the distance between the end 51a of the long side straight portion 51 and the inner circumferential surface 66c of the short side straight portion 66 in the Z-direction. The Z-direction dimension of the narrow portion 56 is approximately half the Z-direction dimension of the second corner portion 64 and the first corner portion 65. The distance between the end face 56d of the narrow portions 56 facing each other in the Z-direction and the inner circumferential surface 66c of the short side straight portion 66 is smaller than the X-direction distance between the long side straight portion 51 of the central region 25a and the first long side straight portion 61. That is, the distance between the end face (end point) 56d of the narrow portion 56 facing each other in the Z direction and the inner peripheral surface 66c of the short side straight portion 66 is approximately half the distance between the long side straight portion 51 of the central region 25a and the first long side straight portion 61 in the X direction.

In the magnetic element 25 of this embodiment, the thickness of the second corner portion 64, the first corner portion 65, and the narrow portion 56 is reduced. Therefore, in the end region 25b, the magnetic field density of the two poles is more uniform compared to the central region 25a. This reduces the generation of magnetic field lines pointing towards the anode 28 instead of the target 23, prevents unnecessary concentration of magnetic field lines, and prevents disturbances such as those caused by electrons circling in a racetrack shape. Therefore, it is possible to stabilize plasma generation, achieve uniform plasma density, and suppress particle generation.

The cathode device 10 includes a magnetic element scanning unit 29 that moves a plurality of magnetic elements 25 along a single scanning direction, namely a oscillation direction. The oscillation direction is the X direction, orthogonal to the Z direction in which the plurality of magnetic elements 25 are vertically positioned. The magnetic element scanning unit 29 changes the position of the plurality of magnetic elements 25 relative to the target 23. The magnetic element scanning unit 29 can oscillate without changing the relative positional relationship of the plurality of magnetic elements 25. That is, each of the plurality of magnetic elements 25 can move (oscillate) relative to the target 23 parallel to the particle emission surface of the target 23 via the magnetic element scanning unit 29.

When viewed from the Y direction, the area scanned by the magnetic element scanning unit 29 by the magnetic element 25 is called the oscillation region. Furthermore, the expression "along the oscillation region" is sometimes used to mean "along the ZX plane." When viewed from the Y direction, the oscillation region has a generally rectangular outline. The oscillation region is defined between the first oscillation end and the second oscillation end, which form the two oscillation ends in the X direction.

The magnetic unit scanning section 29 is composed, for example, of a track, rollers, and a plurality of motors. The track extends along the scanning direction. Rollers are mounted at each of the two ends of the cathode unit 22 in the X direction. The plurality of motors cause each of the plurality of rollers to rotate. The magnetic unit scanning section 29 may be composed of an LM guide rail (registered trademark) having a track extending along the scanning direction. The width of the track of the magnetic unit scanning section 29 in the scanning direction (X direction) is the same as or longer than the width of the target 23. Furthermore, the magnetic unit scanning unit 29 can be configured in other ways as long as it can move a plurality of magnetic units 25 as a single unit along the scanning direction.

In the cathode unit 22 of this embodiment, as shown in Figures 3 and 4, when film is formed by sputtering particles emitted by the magnetic unit scanning section 29, the magnetic unit 25 moves back and forth between the swing end position Reverse and the swing end position Forward.

In the cathode unit 22, a plurality of interconnected magnetic elements, each composed of multiple magnetic elements 25, move together. Specifically, the interconnected magnetic elements move by being driven by the magnetic element scanning unit 29. Here, referring to FIG3, the first scan of the interconnected magnetic elements performed by the magnetic element scanning unit 29 will be explained. First, the interconnected magnetic elements move to the left from the center position (center) in the oscillation direction (X direction) to the oscillation end position (Forward). Then, the interconnected magnetic elements move to the right from the oscillation end position (Forward), passing through the center position (center) to the oscillation end position (Reverse). Then, they move from the oscillation end position (Reverse) back to the center position (center). This completes the first scan of the interconnected magnetic elements. In cathode cell 22, this type of multi-connected magnetic material was scanned repeatedly.

Simultaneously, within the magnetic unit 25, the central magnet 50 and the peripheral magnet 60 form a magnetic field. At this time, the central magnet 50, the peripheral magnet 60, and the yoke 31 form a magnetic circuit.

Next, in the sputtering apparatus 1 of this embodiment, the film formation on the glass substrate 11 will be explained.

First, the glass substrate 11, brought in from outside the sputtering apparatus 1, is placed in the positioning components within the loading/unloading chamber 2 and aligned (see Figure 1). Second, the glass substrate 11 is supported by the robotic arm of the conveying device 3a and removed from the loading/unloading chamber 2. Then, the glass substrate 11 is conveyed via the conveying chamber 3 to the film deposition chamber 4.

Within the film-forming chamber 4, the substrate holding portion 13 is rotated and positioned in a horizontal holding position by a drive unit. Furthermore, a top pin (not shown) is positioned in a ready position, protruding upwards from the substrate holding portion 13, by a top pin moving part. In this state, the glass substrate 11 arriving at the film-forming chamber 4 is inserted above the substrate holding portion 13 by the transport device 3a.

Next, the robotic arm of the conveying device 3a descends and approaches the substrate holding part 13, placing the glass substrate 11 on the top pin in a position aligned with the substrate holding part 13. Then, the robotic arm of the conveying robot 3a retracts into the conveying chamber 3. Afterward, the top pin descends, supporting the glass substrate 11 on the substrate holding part 13.

Next, film formation is performed by sputtering. First, the film formation process in the case where the sputtering apparatus 1 is a side-sputtering apparatus will be explained. In the sputtering apparatus 1, when the substrate holding part 13 rotates, the glass substrate 11 is held upright by the substrate holding part 13 to reach the vertical processing position. This substantially closes the film formation port 4b, holding the glass substrate 11 in the film formation position. In this state, a predetermined gas environment is obtained by the gas control part 14. In this state, plasma is generated by the control part 26, and film formation is performed by sputtering. The magnetic field formation during film formation will be described later.

Furthermore, the film formation process in the case where the sputtering apparatus 1 is a downward sputtering apparatus will be explained. In the sputtering apparatus 1, the substrate holding part 13 rises, and the glass substrate 11 is held by the substrate holding part 13 until it reaches the vertical processing position. This substantially closes the film formation port 4b, holding the glass substrate 11 in the film formation position. In this state, a predetermined gas environment is obtained by the gas control part 14. In this state, plasma is generated by the control part 26, and film formation is performed by sputtering. The formation of the magnetic field during film formation will also be described later.

Next, the processes following the completion of the film deposition treatment will be explained. First, the process following the film deposition treatment will be explained in the case where the sputtering apparatus 1 is a side-sputtering apparatus. In the sputtering apparatus 1, during the film deposition treatment, the substrate holding part 13 is rotated. This allows the glass substrate 11 to reach a horizontally positioned position while being held by the substrate holding part 13. Furthermore, the process following the film deposition treatment will be explained in the case where the sputtering apparatus 1 is a downward-sputtering apparatus. In the sputtering apparatus 1, when the film deposition treatment is completed, the substrate holding part 13 is lowered. This allows the glass substrate 11 to reach a position where it can be removed while being held by the substrate holding part 13. After the film-forming process is completed, the glass substrate 11 is removed from the film-forming chamber 4 by the conveying device 3a. Then, the glass substrate 11 is removed from the loading and unloading chamber 2 via the conveying chamber 3.

The function of the magnetic element 25 in this embodiment will be explained below.

Figure 7 is a diagram illustrating the function of the magnetic element. Figure 7 is a cross-sectional view along the Z-direction showing the electron tracking state with the thickness of the magnetic element not reduced. Figure 8 is a diagram illustrating the function of the magnetic element. Figure 8 is a schematic diagram showing the electron tracking state of the ZX plane with the thickness of the magnetic element not reduced. Figure 9 is a diagram illustrating the function of the magnetic element. Figure 9 is a schematic diagram showing the direction of the magnetic field lines in the ZY plane with the thickness of the magnetic element not reduced. Figure 10 is a diagram illustrating the function of the magnetic element. Figure 10 is a schematic diagram showing the thickness of the target excavated by plasma with the thickness of the magnetic element not reduced. First, the thickness of the magnetic element 25 with the thickness not reduced will be explained.

Furthermore, in the following description, it will be explained with the three magnetic units 25 arranged in the X direction.

As described above, plasma is generated between the surface 23a of the target 23 and the glass substrate 11 by means of the magnetic field formed by the magnetic unit 25. In this state, a film is formed on the front side of the glass substrate 11 by setting the sputtering conditions described later.

Here, during sputtering, as shown in Figure 9, magnetic field lines are formed from the peripheral magnet 60 at the N pole towards the central magnet 50 at the S pole. A magnetic circuit is formed by the central magnet 50, the peripheral magnet 60, and the yoke 31. Therefore, as shown in Figure 8, electrons are tracked along the magnetic field lines and orbit in a racetrack pattern. At this time, the tracked electrons orbit along the racetrack pattern of the peripheral magnet 60. The tracked electrons orbit between the peripheral magnet 60 and the central magnet 50 in the ZX plane.

At this time, in the area near the end region 25b of the swing region of the target 23 along the swing direction, as shown in Figure 9, the magnetic field lines formed from the peripheral magnet portion 60 of the N pole move towards the approaching anode 28, not towards the target 23 itself. That is, the magnetic field lines extend further outward from the swing region of the target 23 than the direction along the normal to the surface 23a of the target 23. The magnetic field lines formed from the peripheral magnet portion 60 of the N pole in Figure 9 slope downward in the Z direction and to the left in the X direction, towards the anode 28.

Therefore, the density of magnetic field lines formed from the peripheral magnet portion 60 of the N pole decreases in the region near the surface 23a of the target 23. At this time, in the end region 25b, because electrons orbit in a racetrack pattern, the electron flow becomes unstable compared to the central region 25a, and the tracked electron density becomes unstable. In this unstable electron density situation, for example, along the racetrack-shaped flow, regions with high and low electron densities alternate. Figure 7 shows the state where the tracked electron density becomes too high, resulting in plasma concentration.

When the tracked electron density is insufficient, no etched region forms on the surface 23a of the target 23, and non-etched regions are formed at both ends in the Z direction. Conversely, when the tracked electron density is too high, the plasma knocks into the non-etched regions, causing particle generation. Furthermore, when the tracked electron density is too high, the amount of target 23 excavated increases, and the thickness of the target 23 is excessively reduced locally.

Furthermore, magnetic field lines are formed from the peripheral magnet section 60 at the N pole towards the central magnet section 50 at the S pole. Through these magnetic field lines, electrons orbit around the central magnet section 50, which is surrounded by the peripheral magnet section 60, on the surface 23a of the target 23. At this time, in the region near the end of the long side of the magnetic element 25 in the direction of electron movement, that is, near the position where the electrons moving in the Z direction along the central magnet section 50 bend in the X direction along the bridging portion 63, the electrons move slower and the density increases compared to the central region 25a.

As a result, at the location where the electron density increases along the bridging portion 63 and the electrons further bend from the X direction to the Z direction, the density decreases. Consequently, erosion of the surface 23a of the target 23 is reduced, forming a non-eroded region. However, since this phenomenon occurs in each adjacent magnetic element 25, the electrons orbiting each other should escape separately into the adjacent magnetic element 25. The result, as shown in Figure 8, is the state of flow and mixing of tracked electrons in the plurality of magnetic elements 25.

Figure 10 shows the thickness of the target 23, which is plasma-dug along the swing direction, corresponding to the end region 25b. Furthermore, Figure 10 schematically shows the profile of a cross-section in the thickness direction of the target after sputtering. Furthermore, without reducing the thickness of the magnetic element 25, as shown in Figure 10, along the swing direction of the target 23 corresponding to the end region 25b, portions of the target 23 are partially dried by plasma, and portions are not plasma-dug. Here, the target lifetime is determined by the portion of the target 23 with the smallest thickness. Therefore, even with the same target 23 thickness, the target lifetime is shorter.

Furthermore, non-corrosion regions are formed at two diagonally opposite locations on target 23. Similarly, non-corrosion regions are easily formed outside of these two diagonally opposite locations. When non-corrosion regions are formed, the applied electrical power is not consumed by the plasma and remains. This remaining power is redistributed to areas different from the two diagonally opposite non-corrosion regions, or absorbed as a whole by voltage (electrical) fluctuations. Because this phenomenon is repeated, it is believed that, without reducing the thickness of the magnetic element 25, the plasma generation conditions change like voltage fluctuations. It is determined that this instability in plasma generation is a cause of deterioration in film formation characteristics or particle generation.

This results in phenomena such as the direction of the magnetic field lines deviating from the normal direction of the surface 23a of the target 23, insufficient electron tracking, and plasma instability. The inventors believe that this phenomenon is caused by a deterioration in the magnetic balance between the central magnet portion 50 and the peripheral magnet portion 60 in the region near the bridging portion 63, without reducing the thickness of the magnetic element 25.

That is, in the central region 25a sandwiched between the first long-side straight portion 61 and the long-side straight portion 51, and in the central region 25a sandwiched between the second long-side straight portion 62 and the long-side straight portion 51, the strength balance of the N and S poles is better. Therefore, the magnetic field lines are directed towards the normal direction of the surface 23a of the target 23, electrons are adequately tracked, and electrons flow smoothly. In contrast, in the end region 25b near the bridging portion 63, along the racetrack-shaped trajectory of the electrons, the strength balance of the N and S poles changes relative to the central region 25a. It is believed that due to this magnetic configuration, the magnetic force balance deteriorates. In this embodiment, the goal is to improve this balance.

Figure 11 is a diagram illustrating the function of the reduced-thickness magnetic element in this embodiment. Figure 11 is a cross-sectional view along the Z-direction showing the electron tracking status of the magnetic element 25. Figure 12 is a diagram illustrating the function of the reduced-thickness magnetic element in this embodiment. Figure 12 is a schematic diagram showing the electron tracking status of the ZX plane of the magnetic element 25. Figure 13 is a diagram illustrating the function of the reduced-thickness magnetic element in this embodiment. Figure 13 is a schematic diagram showing the direction of the magnetic field lines of the magnetic element 25 along the ZY plane. Figure 14 is a diagram illustrating the function of the reduced-thickness magnetic element in this embodiment. Figure 14 is a schematic diagram showing the thickness of the target excavated by the plasma of the magnetic element 25. Secondly, the reduction in the thickness of the magnetic unit 25 will be explained.

Similarly, the explanation will be based on the assumption that the three magnetic units 25 are arranged in the X direction.

Here, during sputtering, in the reduced-thickness magnetic unit 25, as shown in Figure 13, magnetic field lines are formed from the peripheral magnet 60 at the N pole towards the central magnet 50 at the S pole. At this time, a magnetic circuit is formed by the central magnet 50, the peripheral magnet 60, and the yoke 31. Therefore, as shown in Figure 12, electrons are tracked along the magnetic field lines and orbit in a racetrack pattern. The tracked electrons orbit along the peripheral magnet 60 in a racetrack pattern. The tracked electrons orbit between the peripheral magnet 60 and the central magnet 50 in the ZX plane.

At this point, in the region near the end region 25b, as shown in Figure 13, the thickness of the bridging portion 63 is reduced compared to the central region 25a. Consequently, the magnetic field lines formed from the peripheral magnet portion 60 of the N pole are directed towards the approaching target 23, not towards the anode 28. That is, the magnetic field lines formed from the bridging portion 63 are along the normal to the surface 23a of the target 23, and do not extend in a direction that opens outwards towards the swinging area of the target 23. The magnetic field lines formed from the bridging portion 63 of the N pole do not slope downwards in the Z direction and to the left in the X direction in Figure 13, and do not face the anode 28.

Therefore, in the region near the surface 23a of the target 23, the density of magnetic field lines formed from the bridging portion 63 of the N pole does not decrease. The magnetic field lines formed from the bridging portion 63 maintain a uniform density. At this time, in the end region 25b, since electrons orbit in a racetrack pattern, the electron flow does not become unstable compared to the central region 25a. In the end region 25b, the tracked electron density is stabilized compared to the central region 25a. Because the electron density does not become unstable, there is no alternating high and low electron density along the racetrack-shaped flow. Figure 11 shows the state where the tracked electron density becomes uniform and the plasma is not concentrated.

Since the tracked electron density does not become insufficient, the etched region on the surface 23a of the target 23 is appropriately formed. Even at both ends of the Z-direction, the non-etched regions are only slightly large. Furthermore, since the tracked electron density does not become excessively dense, it will not become a cause of particle generation due to plasma impacting the non-etched regions. Consequently, the tracked electron density does not become excessively dense. Therefore, the amount of target 23 excavated does not increase. The thickness of the target 23 can be maintained without localized excessive reduction, resulting in a more uniform reduction of the target 23's thickness.

Furthermore, magnetic field lines are formed from the peripheral magnet 60 at the N pole towards the central magnet 50 at the S pole. Through these magnetic field lines, electrons orbit around the central magnet 50, which is surrounded by the peripheral magnet 60, on the surface 23a of the target 23. At this time, in the region near the end of the long side of the magnetic element 25 in the direction of electron movement—that is, near the position where electrons moving along the central magnet 50 bend along the bridging portion 63 in the X direction—the electron movement speed does not decrease compared to the central region 25a. Therefore, in the end region 25b, the electron density does not increase excessively, maintaining the same electron density as the central region 25a.

As a result, at the location where electrons bend along the bridging portion 63 from the X direction to the Z direction, the electron density remains uniform. Consequently, erosion of the target 23 surface 23a is not reduced, and the formation of non-eroded regions is suppressed. Furthermore, this phenomenon occurs in each adjacent magnetic unit 25, and electrons that should orbit separately almost never escape into adjacent magnetic units 25. As a result, as shown in Figure 12, the flow of tracked electrons can be maintained in a separate and isolated manner within each of the plurality of magnetic units 25.

Figure 14 shows the thickness of the target 23, which is plasma-dug along the swing direction of the target 23 corresponding to the end region 25b. Furthermore, Figure 14 schematically shows the profile of a cross-section in the thickness direction of the target after sputtering. As in this embodiment, by reducing the thickness of the magnetic element 25, as shown in Figure 14, the depth of the target 23, which is plasma-dug along the swing direction of the target 23 corresponding to the end region 25b, is made uniform. That is, the difference in depth between portions locally deep-dug by plasma and shallow-dug by plasma can be suppressed in the target 23. This helps to prevent a shorter target lifespan. In other words, for a target 23 of the same thickness, the utilization efficiency of the target 23 can be improved.

Furthermore, normally, non-corrosion areas are easily formed at the two diagonally opposite locations of the target 23, and also at locations other than the two diagonally opposite locations. However, in the magnetic element 25 of this embodiment, the formation of non-corrosion areas can be suppressed. Alternatively, in the magnetic element 25 of this embodiment, even if non-corrosion areas are formed, their boundaries can be set to a clear state.

Therefore, in the magnetic element 25 of this embodiment, the phenomena of repeated residual and redistribution of residual electricity, or repeated overall electrical fluctuations, occurring when non-erosion regions are formed, can be suppressed. Consequently, changes in plasma generation conditions caused by voltage variations can be suppressed. Because the stability of this plasma generation is improved, deterioration of film-forming properties or particle generation can be suppressed.

Thus, in the magnetic unit 25 of this embodiment, the balance of magnetic forces between the central magnet 50 and the peripheral magnet 60 is improved in the region near the bridging portion 63. Consequently, phenomena such as the deviation of the direction of the magnetic field lines from the normal direction of the surface 23a of the target 23, insufficient electron tracking, and plasma instability can all be suppressed.

That is, similar to the central region 25a sandwiched between the first long side straight portion 61 and the long side straight portion 51, and the central region 25a sandwiched between the second long side straight portion 62 and the long side straight portion 51, the strength balance of the N pole and S pole in the region near the bridging portion 63 is better in the magnetic element 25 of this embodiment. Therefore, in the magnetic element 25 of this embodiment, in the end region 25b, the magnetic field lines are directed towards the normal direction of the surface 23a of the target 23, allowing for sufficient electron tracking and smooth electron flow. This balance can be improved in this embodiment.

In the magnetic element 25 of this embodiment, by reducing the thickness of the bridging portion 63, the generation of non-corrosion regions can be reduced, thus suppressing particle generation. That is, the formation of the boundary between corrosion and non-corrosion regions, where the boundary between non-corrosion and corrosion regions becomes unclear and thus causes particle generation, is reduced. Furthermore, in this embodiment, by suppressing the generation of non-corrosion regions, the power supply is no longer allocated, suppressing partial changes in plasma generation conditions caused by voltage fluctuations, etc. This suppresses particle generation and deviations in film thickness distribution and film property distribution.

Figures 15A and 15B are diagrams illustrating the function of the reduced-thickness magnetic element of this embodiment. Figure 15A is a graph showing the position of the peak position of the horizontal magnetic field formed by the magnetic element 25 along the Z direction from the central position in the X direction of the magnetic element 25. Figure 15B is a graph illustrating the graph of Figure 15A, showing the position of the magnetic element 25 in the Z direction. The symbol PZ0 shown in Figure 15B indicates that the Z-direction position of Figure 15A is 0 (mm). Figures 16A and 16B are diagrams illustrating the function of the reduced-thickness magnetic element of this embodiment. Figure 16A is a graph showing the position of the peak position of the horizontal magnetic field formed by the magnetic element 25 along the X direction from the central position in the Z direction of the magnetic element 25. Figure 16B is a graph illustrating the curves of Figure 16A, showing the X-direction positions of the three magnetic elements 25. The three magnetic elements 25 are respectively represented by the symbols 25L, 25M, and 25N. The symbol PX0 shown in Figure 16B corresponds to the case where the X-direction position in Figure 16A is -300 (mm). The symbol PX1 shown in Figure 16B indicates that the X-direction position in Figure 16A is 200 (mm).

In the magnetic unit 25 with reduced thickness, the magnitude of the horizontal magnetic field in the magnetic field formed by the peripheral magnet 60 and the central magnet 50 is formed as shown in Figures 15A and 16A.

In the Z direction of the reduced-thickness magnetic element 25, a peak value of the horizontal magnetic field is formed by the peripheral magnet portion 60 and the central magnet portion 50. As shown in Figure 15A, regarding the magnetic field strength in the Z direction from the outermost position of the magnetic body's outline, the peak value of the reduced-thickness magnetic element 25 has the same rising shape as the peak value when the thickness of the magnetic element 25 is not reduced. Regarding the position where the magnetic field strength begins to decrease inward, i.e., the peak position of the horizontal magnetic field, the reduced-thickness magnetic element 25 differs from the case where the thickness of the magnetic element 25 is not reduced. The peak position of the reduced-thickness magnetic element 25 is approximately 20 mm away from the central region 25a compared to the peak position of the magnetic element with no reduction in thickness.

Furthermore, as shown in Figure 16A, it can be seen that in the magnetic unit 25L located at the end in the X direction, the peak values of the following two magnetic field intensities are different. [Magnetic Field Intensity A] The peak value of the magnetic field intensity formed by the second long side straight section 62 of the peripheral magnet section 60 located at the very end in the X direction. [Magnetic Field Intensity B] The peak value of the magnetic field intensity formed by the first long side straight section 61 of the peripheral magnet section 60 adjacent to the long side straight section 51 of the central magnet section 50 on the inner side of the oscillation region. Magnetic field intensity A is approximately 0.9 (0.027/0.030) smaller than magnetic field intensity B.

Furthermore, it can be seen that the peak values of the magnetic field strengths formed by the first long straight section 61 of the peripheral magnet portion 60 for each of the three magnetic units 25L, 25M, and 25N differ for the following two: [Magnetic Field Strength C] The maximum peak value of the magnetic field strength formed by the first long straight section 61 of the magnetic unit 25M located in the center of the X direction. [Magnetic Field Strength D] The maximum peak value of the magnetic field strength formed by the first long straight section 61 of the adjacent magnetic units 25L and 25N. Moreover, magnetic field strength C is approximately 0.983 (0.0295/0.030) smaller than magnetic field strength D.

Thus, in the reduced-thickness magnetic element 25, the peak position of the horizontal magnetic field shifts to a more outward position compared to the magnetic element with unreduced thickness. Consequently, when plasma is generated in the same spatial location, the required length of the magnetic element 25 in the Z direction can be shortened. Therefore, in the central region 25a, the lengths of the first long side straight portion 61, the second long side straight portion 62, and the long side straight portion 51 can be reduced. That is, the number of magnets constituting the central region 25a can be reduced, the number of parts can be reduced, and the magnetic element 25 can be miniaturized.

At the same time, the weight of the magnetic unit 25, which is oscillating by the magnetic unit scanning section 29, can be reduced, and the magnetic unit scanning section 29 can be miniaturized. Along with this, the cathode box in the film formation chamber 4 can be miniaturized, the cathode device 10 can be miniaturized, and the generation of particles can be further reduced.

Furthermore, in this embodiment, the outer periphery of the bridging portion 63 is recessed inwards. To address this, it is preferable to reduce the thickness of the bridging portion 63 by causing its inner periphery to expand outwards. This is because, as shown in FIG. 26, this structure improves plasma concentration in the vicinity of the first corner portion 65 and the second corner portion 64, but it cannot reduce the mixing of surrounding tracking electrons with electrons surrounding the adjacent magnetic unit 25. FIG. 26 shows the electrons surrounding the magnetic unit 25 with reduced thickness achieved by causing its inner periphery to expand outwards.

In the sputtering apparatus 1 of this embodiment, by shaking the reduced-thickness magnetic unit 25, the magnetic force balance between the central magnet 50 and the peripheral magnet 60 is improved in the region near the bridging portion 63. Therefore, phenomena such as the deviation of the direction of the magnetic field lines from the normal direction of the surface 23a of the target 23, insufficient electron tracking, and plasma instability can be suppressed. This suppresses the formation of non-corrosion areas, suppresses the generation of particles from non-corrosion areas, suppresses the reduction of film-forming properties, and improves the uniformity of film thickness.

That is, in this embodiment, the following configuration is adopted. The width of the second corner portion 64 and the first corner portion 65 is smaller than the width of the first long side straight portion 61, the long side straight portion 51 and the second long side straight portion 62. Compared with the outer periphery shape along the swing area formed by the extension line of the short side straight portion 66 and the extension lines of the first long side straight portion 61 and the second long side straight portion 62, the outer periphery of the second corner portion 64 and the first corner portion 65 on the ZX surface is formed closer to the central magnet portion 50. The lengths of the second corner portion 64 and the first corner portion 65 in the Z direction are approximately equal to the distances between the first long side line portion 61 and the long side line portion 51 along the ZX plane in the central region 25a, and the distances between the second long side line portion 62 and the long side line portion 51. The distance between the short side line portion 66 on the ZX plane and the end 56d of the central magnet portion 50 is smaller than the distances between the first long side line portion 61 and the long side line portion 51 along the X direction in the central region 25a, and the distances between the second long side line portion 62 and the long side line portion 51. In this way, a balance can be achieved in the magnetic force generated by the two poles of the central magnet 50 and the peripheral magnet 60, so that the magnetic force density of the two poles in the end region 25b of the magnetic unit 25 is uniform with the magnetic force density of the two poles in the central region 25a of the magnetic unit 25. The above-mentioned effect can be achieved.

Furthermore, in this embodiment, by eliminating localized plasma concentrations, the effects of improving substrate temperature deviations and film quality deviations can be achieved.

<Second Embodiment> The sputtering apparatus of the second embodiment of the present invention will be described below based on the drawings.

Figure 17 is an enlarged front view showing the end of the magnetic body of the sputtering apparatus of this embodiment. This embodiment differs from the first embodiment in that the shape of the corner portion is different. In this embodiment, the same symbols are assigned to the components corresponding to those in the first embodiment, and their descriptions are omitted.

As shown in FIG17, the second corner portion 64 and the first corner portion 65 of this embodiment have a fourth corner magnet portion 645 and a fourth corner magnet portion 655 with a ZX surface outline that is a parallelogram.

One end of the first corner portion 65 is connected to the end 61a of the first long side straight portion 61. The other end of the first corner portion 65 is connected to the inner circumferential surface (inner circumferential portion) 66c of the short side straight portion 66. That is, the first corner portion 65 is connected to the end 66a of the short side straight portion 66 in the outline of the swing area, closer to the center in the Z direction. The other end of the first corner portion 65 is connected to the end 66a of the shorter side straight portion 66 in the X direction, closer to the inner circumferential surface 66c of the central magnet portion 50.

One end of the fourth angle magnet 655 in the Z direction is connected to the end 61a of the first long side straight section 61. The entire surface of one end of the fourth angle magnet 655 in the Z direction is connected to the end 61a of the first long side straight section 61. One end of the fourth angle magnet 655 in the Z direction is connected to the center of the end 61a of the first long side straight section 61 in the X direction. The other end of the fourth angle magnet 655 in the Z direction is connected to the inner circumferential surface 66c of the short side straight section 66. Half of the width dimension of the fourth angle magnet 655 in the X direction is connected to the inner circumferential surface 66c of the short side straight section 66. Half of the width dimension of the fourth angle magnet 655 in the X direction protrudes from the end 66a of the short side straight section 66.

The Z-direction end of the inner peripheral surface (inner peripheral portion) 655b of the fourth corner magnet 655 is connected to the end 61a of the first long side straight portion 61 at a position further outward in the X-direction than the inner peripheral surface 61c of the first long side straight portion 61. The Z-direction end of the inner peripheral surface 655b of the fourth corner magnet 655 can be connected in a manner consistent with the inner peripheral surface 61b of the first long side straight portion 61. The inner peripheral surface 655b of the fourth corner magnet 655 is inclined relative to the Z-direction axis of the magnetic element 25. The inner peripheral surface 655b of the fourth corner magnet 655 is inclined in such a way that it approaches the inner peripheral surface 645b of the fourth corner magnet 645 (described later) as it moves outward in the Z-direction.

The outer peripheral surface (outer peripheral portion) 655a of the fourth corner magnet portion 655 is closer to the central magnet portion 50 in the X direction than the outer peripheral surface 61d of the first long side straight portion 61. The outer peripheral surface 655a of the fourth corner magnet portion 655 is inclined relative to the axis in the Z direction of the magnetic element 25. The outer peripheral surface 655a of the fourth corner magnet portion 655 is inclined in such a way that it approaches the outer peripheral surface 645a of the fourth corner magnet portion 645 (described later) in the Z direction as it moves outward.

That is, the outer peripheral surface 655a of the first corner portion 65 is inclined in a direction along the Z direction from the first long side line portion 61 toward the short side line portion 66 (inclined in the Z direction), approaching the end face 66a of the short side line portion 66 from the outer peripheral surface 61d of the first long side line portion 61. The inner peripheral surface 655b of the first corner portion 65 is similarly inclined in a direction along the Z direction from the first long side line portion 61 toward the short side line portion 66 (inclined in the Z direction), approaching the central magnet portion 50 from the first long side line portion 61.

The first corner portion 65 extends along the Z direction of the outer peripheral surface 61d of the first long side straight portion 61, and slopes towards the X direction of the inner peripheral surface 66c of the short side straight portion 66. That is, the first corner portion 65 has a sloped portion. The first corner portion 65, spanning the entire length of the sloped portion, has the same width dimension in the X direction. The width dimension of the first corner portion 65 in the X direction is smaller than the width dimension of the first long side straight portion 61 in the X direction. The width dimension of the first corner portion 65 in the X direction is smaller than the width dimension of the short side straight portion 66 in the Z direction.

The outer peripheral surface 655a of the first corner portion 65 is more recessed toward the inner side of the magnetic unit 25 than the outline of the axle 31. That is, the outer peripheral surface 655a of the first corner portion 65 is more recessed toward the inner side of the magnetic unit 25 than the outline of the imaginary rectangle formed by the plane extending the outer peripheral surface 61d of the first long side straight portion 61 in the Z direction and the plane extending the outer peripheral surface 66d of the short side straight portion 66 in the X direction. The outer peripheral surface 655a of the first corner portion 65 is recessed closer to the central magnet portion 50 than the outline of the imaginary rectangle of the magnetic unit 25.

The length of the first corner portion 65 in the Z direction and the distance between the central magnet portion 50 and the peripheral magnet portion 60 in the X direction are approximately equal. That is, in the Z direction, the distance between the end 61a of the first long side straight portion 61 and the inner peripheral surface 66c of the short side straight portion 66 and the distance between the central magnet portion 50 and the peripheral magnet portion 60 in the X direction of the central region 25a are approximately equal.

One end of the second corner portion 64 is connected to the end 62a of the second long-side straight portion 62. The other end of the second corner portion 64 is connected to the inner circumferential surface (inner circumferential portion) 66c of the short-side straight portion 66. That is, the second corner portion 64 is connected to the end 66a of the short-side straight portion 66 in the outline of the swing area, closer to the center in the Z direction. The other end of the second corner portion 64 is connected to the end 66a of the shorter-side straight portion 66 in the X direction, closer to the inner circumferential surface 66c of the central magnet portion 50.

One end of the fourth angle magnet 645 in the Z direction is connected to the end 62a of the second long side straight section 62. The entire surface of one end of the fourth angle magnet 645 in the Z direction is connected to the end 62a of the second long side straight section 62. One end of the fourth angle magnet 645 in the Z direction is connected to the center of the end 62a of the second long side straight section 62 in the X direction. The other end of the fourth angle magnet 645 in the Z direction is connected to the inner circumferential surface 66c of the short side straight section 66. Half of the width dimension of the fourth angle magnet 645 in the X direction is connected to the inner circumferential surface 66c of the short side straight section 66. Half of the width dimension of the fourth angle magnet 645 in the X direction protrudes from the end 66a of the short side straight section 66.

The Z-direction end of the inner peripheral surface (inner peripheral portion) 645b of the fourth corner magnet 645 is connected to the end 62a of the second long side straight portion 62 at a position further outward in the X-direction than the inner peripheral surface 61c of the second long side straight portion 62. The Z-direction end of the inner peripheral surface 645b of the fourth corner magnet 645 can be connected in a manner consistent with the inner peripheral surface 61c of the second long side straight portion 62. The inner peripheral surface 645b of the fourth corner magnet 645 is inclined relative to the Z-direction axis of the magnetic element 25. The inner peripheral surface 645b of the fourth corner magnet 645 is inclined in such a way that it approaches the inner peripheral surface 655b of the fourth corner magnet 655 as it moves outward in the Z-direction.

The outer peripheral surface (outer peripheral portion) 645a of the fourth corner magnet portion 645 is closer to the central magnet portion 50 in the X direction than the outer peripheral surface 62d of the second long side straight portion 62. The outer peripheral surface 645a of the fourth corner magnet portion 645 is inclined relative to the axis in the Z direction of the magnetic element 25. The outer peripheral surface 645a of the fourth corner magnet portion 645 is inclined in such a way that it approaches the outer peripheral surface 655a of the fourth corner magnet portion 655 in the Z direction as it moves outward.

That is, the outer peripheral surface 645a of the second corner portion 64 is inclined in a direction along the Z-direction from the second long side line portion 62 toward the short side line portion 66 (inclined in the Z-direction), approaching the end face 66a of the short side line portion 66 from the outer peripheral surface 62d of the second long side line portion 62. The inner peripheral surface 645b of the second corner portion 64 is similarly inclined in a direction along the Z-direction from the second long side line portion 62 toward the short side line portion 66 (inclined in the Z-direction), approaching the central magnet portion 50 from the second long side line portion 62.

The second corner portion 64 extends along the Z direction of the outer peripheral surface 62d of the second long side straight portion 62, and slopes towards the X direction of the inner peripheral surface 66c of the short side straight portion 66. That is, the second corner portion 64 has a sloped portion. The second corner portion 64, spanning the entire length of the sloped portion, has the same width dimension in the X direction. The width dimension of the second corner portion 64 in the X direction is smaller than the width dimension of the first long side straight portion 61 in the X direction. The width dimension of the second corner portion 64 in the X direction is smaller than the width dimension of the short side straight portion 66 in the Z direction.

The outer peripheral surface 645a of the second corner portion 64 is more recessed toward the inner side of the magnetic unit 25 than the outline of the axle 31. That is, the outer peripheral surface 645a of the second corner portion 64 is more recessed toward the inner side of the magnetic unit 25 than the outline of the imaginary rectangle formed by the plane extending the outer peripheral surface 62d of the second long side straight portion 62 in the Z direction and the plane extending the outer peripheral surface 66d of the short side straight portion 66 in the X direction. The outer peripheral surface 645a of the second corner portion 64 is recessed closer to the central magnet portion 50 than the outline of the imaginary rectangle of the magnetic unit 25.

The length of the second corner portion 64 in the Z direction and the distance between the central magnet portion 50 and the peripheral magnet portion 60 in the X direction are approximately equal. That is, in the Z direction, the distance between the end 62a of the second long side straight portion 62 and the inner peripheral surface 66c of the short side straight portion 66 and the distance between the central magnet portion 50 and the peripheral magnet portion 60 in the X direction of the central region 25a are approximately equal.

Figure 18 is a diagram illustrating the function of the reduced-thickness magnetic element of this embodiment. Figure 18 is a cross-sectional schematic view along the Z direction showing the electron tracking status of the magnetic element 25. Figure 19 is a diagram illustrating the function of the reduced-thickness magnetic element of this embodiment. Figure 19 is a schematic diagram showing the electron tracking status of the ZX plane of the magnetic element 25.

In the magnetic unit 25 of this embodiment, magnetic field lines are also formed from the peripheral magnet portion 60 toward the central magnet portion 50 towards the S pole. At this time, in the region near the end region 25b, as shown in FIG. 17, the thickness of the bridging portion 63 is reduced compared to the central region 25a. Therefore, the magnetic field lines formed from the peripheral magnet portion 60 of the N pole are directed toward the approaching target 23, not toward the anode 28. That is, the magnetic field lines formed from the bridging portion 63 extend along the normal to the surface 23a of the target 23, and do not extend in a direction that opens outwards toward the swinging area of the target 23. The magnetic field lines formed from the bridging portion 63 of the N pole in this embodiment are the same as those in the first embodiment shown in FIG13; they do not tilt to the left in the X direction as they point downwards in the Z direction, and do not point towards the anode 28.

Therefore, in the region near the surface 23a of the target 23, the density of magnetic field lines formed from the bridging portion 63 of the N pole does not decrease. The magnetic field lines formed from the bridging portion 63 maintain a uniform density. At this time, in the end region 25b, since electrons orbit in a racetrack pattern, the electron flow does not become unstable compared to the central region 25a. In the end region 25b, the tracked electron density is stabilized compared to the central region 25a. Because the electron density does not become unstable, there is no alternating high and low electron density along the racetrack-shaped flow. Figure 18 shows the state where the tracked electron density becomes uniform and the plasma is not concentrated.

Since the tracked electron density does not become insufficient, the etched region on the surface 23a of the target 23 is formed appropriately. Even if non-etched regions are formed at both ends in the Z direction, the non-etched regions are only slightly large. Furthermore, since the tracked electron density does not become too dense, it will not become a cause of particle generation due to plasma knocking on the non-etched regions. Consequently, the tracked electron density does not become too dense. Therefore, the amount of target 23 excavated does not increase. The thickness of the target 23 can be maintained in a state where it is not excessively reduced locally, and the thickness of the target 23 is reduced more uniformly.

Furthermore, magnetic field lines are formed from the peripheral magnet 60 at the N pole towards the central magnet 50 at the S pole. Through these magnetic field lines, electrons orbit around the central magnet 50, which is surrounded by the peripheral magnet 60, on the surface 23a of the target 23. At this time, in the region near the end of the long side of the magnetic element 25 in the direction of electron movement—that is, near the position where electrons moving along the central magnet 50 bend along the bridging portion 63 in the X direction—the electron movement speed does not decrease compared to the central region 25a. Therefore, in the end region 25b, the electron density does not increase excessively, maintaining the same electron density as the central region 25a.

As a result, at the location where electrons bend along the bridging portion 63 from the X direction to the Z direction, the electron density remains uniform. Consequently, erosion of the target 23 surface 23a is not reduced, and the formation of non-eroded regions is suppressed. Furthermore, this phenomenon occurs in each adjacent magnetic unit 25, and electrons that should orbit separately hardly escape into adjacent magnetic units 25. As a result, as shown in Figure 19, a state of separate orbiting of electrons tracked by multiple magnetic units 25 can be maintained.

In this embodiment, the same effect as the above-described embodiment can be achieved. Furthermore, in this embodiment, by eliminating localized plasma concentration, the effects of improving substrate temperature deviation and film quality deviation can be achieved.

<Third Embodiment> The sputtering apparatus of the third embodiment of the present invention will be described below based on the drawings.

Figure 20 is an enlarged front view showing the end of the magnetic body of the sputtering apparatus of this embodiment. This embodiment differs from the first embodiment in that the shape of the central magnet portion is different. In this embodiment, the same symbols are assigned to the components corresponding to those in the first embodiment, and their descriptions are omitted.

As shown in FIG. 20, the central magnet portion 50 of this embodiment is eccentric in the X direction in the end region 25b. That is, relative to the central axis 25Z of the long side straight section 51 of the central region 25a, the central magnet portion 50 is offset in the X direction in the end region 25b as it separates from the central region 25a in the Z direction. In the end region 25b, the configuration is such that the offset of the central magnet portion 50 in the X direction increases as it separates from the central region 25a in the Z direction.

That is, at the end 51a of the long straight section 51 in the central region 25a, a straight section 52 offset to the right in FIG. 20 is connected. One end of the straight section 52 is connected to the end 51a of the long straight section 51. The straight section 52 is arranged parallel to the central axis 25Z of the magnetic unit 25. The center position of the straight section 52 in the X direction (the central axis extending along the Z direction) is offset to the right more than the central axis 25Z of the magnetic unit 25 along the Z direction in FIG. 20. The width dimension of the straight section 52 in the X direction is the same as the width dimension of the long straight section 51 in the X direction.

A straight section 53 is connected to the straight section 52. One end of the straight section 53 is connected to the other end of the straight section 52. The straight section 53 is arranged parallel to the central axis 25Z of the magnetic unit 25. The center position of the straight section 53 in the X direction (along the central axis in the Z direction) is offset to the right compared to the central axis in the Z direction of the straight section 52 in Figure 20. The width dimension of the straight section 53 in the X direction is the same as the width dimension of the long side straight section 51 in the X direction.

A straight section 54 is connected to the straight section 53. One end of the straight section 54 is connected to the other end of the straight section 53. The straight section 54 is arranged parallel to the central axis 25Z of the magnetic unit 25. The center position of the straight section 54 in the X direction (along the central axis in the Z direction) is offset to the right compared to the central axis in the Z direction of the straight section 53 in FIG. 20. The width dimension of the straight section 54 in the X direction is the same as the width dimension of the long side straight section 51 in the X direction. The end (end face) 54a of the straight section 54 in the X direction is connected to the end 56c of the narrow section 56 in the Z direction.

The width of the narrow portion 56 in the X direction is smaller than the width of the long side straight portion 51 of the central region 25a in the X direction. The width of the narrow portion 56 in the X direction is approximately 10% to 20% smaller than the width of the long side straight portion 51 of the central region 25a in the X direction. The narrow portion 56 is positioned at the center of the end portion 54a of the straight portion 54 in the X direction. That is, the end portion 54a of the straight portion 54 has portions at both ends in the X direction that do not connect with the narrow portion 56.

The straight sections 52, 53, and 54 are all disposed in the end region 25b. The straight sections 52, 53, and 54 are formed with a plurality of steps along the Z direction. Furthermore, the straight sections 52, 53, and 54 are not limited to the above configuration as long as the longer side straight section 51 is offset to the right in FIG. 20.

In this embodiment of the magnetic element 25, the distance between the central magnet 50 and the first long-side straight portion 61 in the X-direction of the end region 25b is shorter than the distance between the central magnet 50 and the second long-side straight portion 62 in the X-direction. Through the magnetic field formed in this embodiment of the magnetic element 25, the density difference of orbiting electrons in the end region 25b before and after the change of direction from the X-direction to the Z-direction and from the Z-direction to the X-direction is small and uniform.

In the end region 25b, the scattering of peripheral electrons toward the glass substrate 11 after changing direction in the ZX plane towards the central region 25a is more suppressed than in the magnetic element 25 of the first embodiment. In other words, the scattering of peripheral electrons toward the glass substrate 11 after changing direction in the ZX plane towards the central region 25a is more effectively captured by the leaked magnetic field compared to the magnetic element 25 of the first embodiment.

On the other hand, after the direction is changed, within a predetermined length from the end region 25b to the central region 25a, the density of orbiting electrons in the end region 25b will not increase and expand in the Y-axis direction. Therefore, there will be no local disappearance of plasma caused by the increase in the density of orbiting electrons and their expansion in the Y-axis direction.

Here, the range by which the central magnet 50 is moved in the X direction, as the end region 25b, is appropriately set according to the length of the magnetic unit 25 in the Z-axis direction, the distance between the sputtering surface and the glass substrate 11, and the electrical force applied to the target 23 during sputtering. For example, the length of the end region 25b in the Z-axis direction can be set to more than twice the distance in the X-axis direction between the long side straight portion 51 of the central region 25a and the first long side straight portion 61, and the distance in the X-axis direction between the long side straight portion 51 and the second long side straight portion 62.

At this time, one end of the central magnet 50 is preferably offset in such a way that the distance in the X direction between the end region 25b and the first long side straight section 61 gradually decreases as it moves outward in the Z direction. Similarly, the other end of the central magnet 50 is preferably offset in such a way that the distance in the X direction between the end region 25b and the second long side straight section 62 gradually decreases as it moves outward in the Z direction.

In the magnetic element 25 of this embodiment, the difference in electron density around the periphery before and after the change of direction along the ZX plane in the end region 25b is small. Furthermore, in the magnetic element 25, the scattering of peripheral electrons towards the glass substrate 11 towards the central region 25a after the change of direction in the ZY plane is further suppressed. That is, in the magnetic element 25, electrons are sufficiently captured by the magnetic field formed by the central magnet 50 and the peripheral magnet 60. Moreover, in the magnetic element 25, even after the change of direction, the electron density around the periphery in the end region 25b is equal to the electron density in the central region 25a. In the magnetic element 25, it is confirmed that magnetic field lines do not extend towards the Y-axis direction.

From the above results, it is clear that the preferred configuration is as follows: Like the magnetic element 25, the central magnet 50 and the peripheral magnet 60 are offset by bringing the two ends of the central magnet 50 closer to the different first long side lines 61 and 62 of the peripheral magnet 60. It has been determined that the magnetic element 25 of this embodiment is suitable as an electron divergence suppression device for suppressing the upward divergence of surrounding electrons.

According to the magnetic element 25 of this embodiment, it can span approximately the entire length in the Z direction, generating a racetrack-shaped plasma that is approximately symmetrical in the X direction and has a uniform electron density distribution. Therefore, when a thin film is deposited on a glass substrate 11 using a sputtering apparatus 1 equipped with the aforementioned magnetic element 25, the entire surface of the glass substrate 11 can be covered, and the film thickness or quality distribution can be well achieved. Furthermore, since the stroke length of the reciprocating movement in the X-axis direction performed by the magnetic element scanning unit 29 is set to a longer value, the utilization efficiency of the target 23 can be improved.

Furthermore, although not specifically illustrated, consider the following configuration: In contrast to the above configuration, the central magnet 50 has a straight shape, and relative to the central magnet 50, the area near the bridging portion 63 of the peripheral magnet 60 in the end region 25b is offset in different directions. However, it has been confirmed that in this configuration, it is impossible to suppress the propagation of orbiting electrons in the peripheral region after the orientation of the bridging portion 63 is changed.

In this embodiment, the same effect as the above-described embodiment can be achieved. Furthermore, in this embodiment, by eliminating localized plasma concentration, the effects of improving substrate temperature deviation and film quality deviation can be achieved.

<Fourth Embodiment> The sputtering apparatus of the fourth embodiment of the present invention will be described below based on the drawings.

Figure 21 is an enlarged front view showing the end of the magnetic body of the sputtering apparatus of this embodiment. This embodiment differs from the first to third embodiments described above in terms of the auxiliary magnetic body. In this embodiment, the same symbols are assigned to the components corresponding to the first to third embodiments, and their descriptions are omitted.

The sputtering apparatus 1 of this embodiment, as shown in FIG. 21, includes an auxiliary magnetic body 27. The magnetic body unit 25 of the auxiliary magnetic body 27, located at the outer edge of the swinging end and the swinging beginning end, is disposed opposite to the end of the auxiliary magnetic body 27 in the X-direction direction. The auxiliary magnetic body 27 is formed in a straight line shape. The auxiliary magnetic body 27 is arranged parallel to the first long side straight section 61 of the peripheral magnet section 60. The pole of the auxiliary magnetic body 27 is the same as the pole of the nearest peripheral magnet section 60. That is, as shown in FIG. 21, if the peripheral magnet section 60 is an N pole, then the auxiliary magnetic body 27 is also provided to be an N pole. The auxiliary magnet 27 is not located outside the peripheral magnet portion 60 of the outermost magnetic unit 25 located at both ends of the plurality of magnetic unit 25 in the X-direction. That is, the auxiliary magnet 27 is only located in the X-direction at the position corresponding to the end of the target 23.

The auxiliary magnetic element 27 extends along the same Z-direction as the nearest peripheral magnet portion 60. That is, the Z-direction dimension of the auxiliary magnetic element 27 is approximately equal to the Z-direction dimension of the outermost magnetic element unit 25 located at both ends of the X-direction. Here, the Z-direction dimension of the auxiliary magnetic element 27 can be set to approximately ±5 mm relative to the Z-direction dimension of the outermost magnetic element unit 25 located at both ends of the X-direction. The Z-direction dimension of the magnetic element unit 25 is set to the length of the peripheral magnet portion 60 along the central axis 25Z.

The cross-sectional shape of the auxiliary magnetic body 27 is the same as the first long side straight portion 61 of the nearest peripheral magnet portion 60. That is, the auxiliary magnetic body 27 is a magnet with a generally rectangular cross-sectional shape. The auxiliary magnetic body 27 has the same cross-sectional shape along its entire length in the Z direction. The auxiliary magnetic body 27 is positioned very close to the nearest peripheral magnet portion 60 in the X direction. Specifically, as shown in FIG. 21, the auxiliary magnetic body 27 is in very close contact with the nearest peripheral magnet portion 60 in the X direction. Alternatively, as described later, the auxiliary magnetic body 27 may also be separated from the nearest peripheral magnet portion 60 by a predetermined distance in the X direction.

The auxiliary magnetic element 27 has a protrusion 27a. The protrusion 27a protrudes toward the target 23 relative to the ZX plane formed by the end face (pole plane) 30 of the peripheral magnet portion 60 of the magnetic element unit 25. The protrusion 27a is a convex portion protruding from the ZX plane in the Y direction. The protrusion 27a is continuously formed in the Z direction. The front end of the protrusion 27a may protrude toward the target 23 further than the pole plane 30. The front end of the protrusion 27a may be located at the same position as the pole plane 30 in the Y direction. The front end of the protrusion 27a may be further separated from the target 23 than the pole plane 30.

In other words, the auxiliary magnetic body 27, having a rectangular cross-sectional shape, is positioned such that one side is inclined to the pole plane 30. Here, a corner formed between the two sides of the auxiliary magnetic body 27 protrudes from the pole plane 30 in the Y direction. This protruding corner is located at the corner of the magnetic body unit 25 within the pole plane 30. This protruding corner (protruding corner) is a protrusion 27a. Furthermore, the configuration of the protrusion 27a is not limited to adjusting the orientation of the auxiliary magnetic body 27 with a rectangular cross-sectional shape. For example, the auxiliary magnetic body 27 may have a protrusion 27a by providing a protrusion on one side of the auxiliary magnetic body 27. The protrusions 27a of the auxiliary magnetic body 27 only need to be formed at a predetermined position in the width direction of the auxiliary magnetic body 27. In this case, with the auxiliary magnetic body 27 arranged parallel to the magnetic pole plane 30, the protrusions 27a protrude from the magnetic pole plane 30 in the Y direction. In this embodiment, the auxiliary magnetic body 27 is configured such that one side of the auxiliary magnetic body 27 is inclined relative to the magnetic pole plane 30.

The auxiliary magnetic body 27 is tilted relative to the magnetic pole plane 30. That is, the auxiliary magnetic body 27 can be tilted at an angle θ relative to the ZX plane, as shown in Figure 21. Here, the angle θ is tilted in a manner that rotates in the X direction with the Z direction as the axis relative to the normal of the surface 23a of the target 23 (i.e., the Y direction). The direction of the tilt angle of the auxiliary magnetic body 27 is set to positive, with the magnetic pole surface of the auxiliary magnetic body 27 facing the inside of the oscillation area of the magnetic body unit 25. In this case, the angle θ can be set to the range of 0 deg to 90 deg, more preferably to the range of 0 deg to 60 deg, further to the range of 0 deg to 45 deg, and 0 deg to 30 deg.

The magnetic strength of the auxiliary magnetic body 27 is equal to or less than the magnetic strength of the first long side straight portion 61 of the nearest peripheral magnet portion 60. Specifically, the magnetic strength of the auxiliary magnetic body 27 can be set to be 1/2 to 3/4, or 1/2 to 1/3, of the magnetic strength of the nearest first long side straight portion 61. The magnetic strength of the nearest first long side straight portion 61 can be set to be 1 to 1.5 times, or 1.1 to 1.4 times, for example, about 1.39 times, of the magnetic strength of the auxiliary magnetic body 27.

The auxiliary magnetic body 27 is fixed to the yoke 31 via the auxiliary yoke 31d. The auxiliary yoke 31d is adjacent to the X-direction end of the yoke 31. Alternatively, the auxiliary yoke 31d can be integral with the yoke 31. In this case, the auxiliary yoke 31d and the yoke 31 are made of the same material. The auxiliary yoke 31d is composed of a magnetic body or a dielectric body. The auxiliary magnetic body 27 is fixed to the auxiliary yoke 31d at a predetermined angle θ by a fixing member 27g. The magnetic pole face of the auxiliary magnetic body 27, opposite to that of the target 23, abuts against the auxiliary yoke 31d. In doing so, the magnetism of the auxiliary magnet 27 and the auxiliary yoke 31d is applied to the magnetic circuit formed by the central magnet 50, the peripheral magnet 60, and the yoke 31.

In the sputtering apparatus 1 of this embodiment, similar to the embodiments described above, magnetic field lines are formed during sputtering, extending from the peripheral magnet 60 at the N pole to the central magnet 50 at the S pole. In addition to the central magnet 50, the peripheral magnet 60, and the yoke 31, auxiliary magnets 27 and auxiliary yokes 31d are also included, forming a magnetic circuit. This allows electrons to be tracked along the magnetic field lines.

At this time, at the position of the swing end within the swing range of target 23, magnetic field lines are formed from the peripheral magnet portion 60 of the N pole. These magnetic field lines are influenced by the magnetic field lines formed by the self-auxiliary magnet 27, thereby tilting to the right in the Y direction orthogonal to the magnetic pole plane 30, or the X direction in Figure 21, so as not to face the anode 28. Thus, the magnetic field line density on the surface 23a of target 23 does not decrease. That is, the tracked electron density is sufficiently maintained without being insufficient, and the plasma density is sufficiently maintained. As a result, non-erosion regions forming at both ends in the X direction on the surface 23a of target 23 can be suppressed.

Furthermore, it also includes a central magnet 50, a peripheral magnet 60, a yoke 31, an auxiliary magnet 27, and an auxiliary yoke 31d, forming a magnetic circuit. Therefore, through the magnetic field lines from the peripheral magnet 60 at the N pole to the central magnet 50 at the S pole, electrons orbit around the central magnet 50 surrounded by the peripheral magnet 60 on the surface 23a of the target 23. At this time, in the end region 25b of the magnetic element unit 25, in the area near the position where electrons moving along the central magnet 50 in the Z direction bend along the bridging portion 63 in the X direction, the slowing down of electron movement speed can be further suppressed, and the increase in density can be further suppressed.

As a result, no decrease in electron density occurs at the position where electrons bend along the bridging portion 63 from the X direction to the Z direction. Consequently, the formation of non-corrosion regions on the surface 23a of the target 23 is suppressed in the two magnetic units 25 that form the oscillation ends, i.e., at both ends in the X direction. That is, by having the auxiliary magnetic body 27 adjacent to each of the two magnetic units 25 at both ends in the X direction, the formation of non-corrosion regions at the two diagonally opposite locations can be suppressed. Thus, by suppressing voltage changes and suppressing the formation of non-corrosion regions, the formation of non-corrosion regions that are prone to form outside the two diagonally opposite locations can be further suppressed.

According to the sputtering apparatus 1 of this embodiment, the effect in the region near the Z-direction end of the swing region can be achieved in the same way as in the embodiments described above. Furthermore, according to the sputtering apparatus 1 of this embodiment, by means of the magnetic field formed by the auxiliary magnetic body 27, the magnetic lines of force formed by the magnetic body unit 25 at the swing end of the magnetic body unit 25 can be further prevented from pointing towards the anode 28. Thereby, in this embodiment, electrons attracted towards the anode 28 can be further suppressed. That is, in this embodiment, the magnetic lines of force formed by the magnetic body unit 25 can be tilted towards the Y direction at the swing end, or to the right of FIG. 21, rather than the Y direction. That is, in this embodiment, the magnetic lines of force formed by the magnetic element 25 can be inclined inward toward the outline of the target 23 at the swing end relative to the thickness direction of the target 23. In this way, the generation of non-erosion areas can be suppressed.

That is, by further reducing the generation of non-eroded areas, the generation of particles can be suppressed. In other words, previously, the boundary between non-eroded and eroded areas became unclear, which was the cause of particle generation, but according to this embodiment, the formation of the boundary area between eroded and non-eroded areas is reduced.

Figure 22 is a diagram illustrating the function of the reduced-thickness magnetic element in this embodiment. Figure 22 is a cross-sectional schematic view along the Z direction showing the electron tracking status of the magnetic element 25. Figure 23 is a diagram illustrating the function of the reduced-thickness magnetic element in this embodiment. Figure 23 is a schematic diagram showing the electron tracking status of the ZX plane of the magnetic element 25.

In the magnetic unit 25 of this embodiment, magnetic field lines are also formed between the auxiliary magnetic body 27 and the peripheral magnet 60, pointing towards the central magnet 50 at the S pole. At this time, in the region near the end region 25b, as shown in FIG. 20, the thickness of the bridging portion 63 is reduced compared to the central region 25a. Therefore, the magnetic field lines formed from the peripheral magnet 60 at the N pole are directed towards the approaching target 23, not towards the anode 28. That is, the magnetic field lines formed from the bridging portion 63 extend along the normal to the surface 23a of the target 23, and do not extend in a direction that opens outwards towards the swinging area of the target 23. The magnetic field lines formed from the bridging portion 63 of the N pole in this embodiment are the same as those in the first embodiment shown in FIG. 13; they do not tilt to the left in the X direction while pointing downwards in the Z direction, and do not point towards the anode 28. Even when the auxiliary magnet 27 is provided, this phenomenon does not change significantly.

Therefore, in the region near the surface 23a of the target 23, the density of magnetic field lines formed from the bridging portion 63 of the N pole does not decrease. The magnetic field lines formed from the bridging portion 63 maintain a uniform density. At this time, in the end region 25b, since electrons orbit in a racetrack pattern, the electron flow does not become unstable compared to the central region 25a. In the end region 25b, the tracked electron density is stabilized compared to the central region 25a. Because the electron density does not become unstable, there is no alternation between high and low electron density along the racetrack-shaped flow. Even when the auxiliary magnet 27 is provided, this phenomenon does not change significantly. Figure 22 shows the state where the tracked electron density becomes uniform and the plasma is no longer concentrated.

Since the tracked electron density does not become insufficient, the erosion region on the surface 23a of the target 23 is appropriately formed, and even the non-erosion regions formed at both ends in the Z direction are only slightly large. Furthermore, since the tracked electron density does not become excessively dense, the plasma will not strike the non-erosion regions, thus preventing the generation of particles. Moreover, since the tracked electron density does not become excessively dense, the amount of electrons excavated from the target 23 will not increase. Therefore, the thickness of the target 23 can be maintained without localized excessive reduction, resulting in a more uniform reduction of the target 23's thickness.

Furthermore, magnetic field lines are formed from the peripheral magnet 60 at the N pole towards the central magnet 50 at the S pole. Through these magnetic field lines, electrons orbit the central magnet 50, which is surrounded by the peripheral magnet 60, on the surface 23a of the target 23. At this time, the electrons move along the long side of the magnetic unit 25, that is, along the central magnet 50 in the Z direction. Regarding the direction of electron movement, the speed of electron movement in the region near the point where the bridging portion 63 bends in the X direction does not decrease compared to the speed of movement in the central region 25a. Therefore, in the end region 25b, the electron density does not increase excessively and remains at the same level as in the central region 25a.

As a result, at the location where electrons bend along the bridging portion 63 from the X direction to the Z direction, the electron density remains uniform. Consequently, erosion of the target 23 surface 23a is not reduced, and the formation of non-eroded areas is suppressed. Furthermore, this phenomenon occurs in each adjacent magnetic unit 25; electrons that should orbit separately almost never escape into adjacent magnetic units 25. As a result, as shown in Figure 23, the flow of tracked electrons can be maintained separately in each of the plurality of magnetic units 25. Even when an auxiliary magnet 27 is provided, this phenomenon does not change significantly.

Therefore, according to this embodiment, a cathode unit having each magnetic element 25 with a bridge portion 63 having reduced thickness and an auxiliary magnetic element 27 is realized. This suppresses phenomena such as the deviation of the direction of the magnetic field lines from the normal direction of the target surface 23a, insufficient electron tracking, and plasma instability at both the X-direction and Z-direction ends of the oscillation region. This suppresses the formation of non-corrosion regions throughout the entire circumference of the oscillation region. It also suppresses the generation of particles from non-corrosion regions. Furthermore, it suppresses the reduction of film-forming properties, improves film thickness uniformity, and aims to increase target lifetime.

Therefore, according to the sputtering apparatus 1 of this embodiment, the same effect as that in the area near the end of the swinging area in the Z direction of the above-described embodiments can be achieved in the area near the end in the X direction. That is, the above-described effect can be achieved in the entire circumference of the swinging area in all four directions.

Furthermore, in this invention, each of the above-mentioned embodiments can be individually selected and implemented separately.

For example, the auxiliary magnetic body 27 of the fourth embodiment can be combined with any of the first to third embodiments. Furthermore, the fourth corner magnet 655 and the fourth corner magnet 645 of the second embodiment can be combined with the central magnet 50 eccentric in the X-direction of the third embodiment. Alternatively, the fourth corner magnet 655 and the fourth corner magnet 645 of the second embodiment can be combined with the central magnet 50 eccentric in the X-direction of the third embodiment and the auxiliary magnetic body 27 of the fourth embodiment. [Example]

The following describes an embodiment of the present invention.

Here, a confirmation test is described as a specific example of the sputtering apparatus of the present invention. Here, the non-corrosion area of the target 23 was confirmed, and the target excavation amount distribution, film thickness distribution, and sheet resistance distribution were measured.

<Experimental Example 1> Using the sputtering apparatus 1 with an eccentric central magnet portion 50 and a reduced-thickness bridging portion 63 as shown in the third embodiment, the length of the magnetic element 25 in the Z direction is set to 2340 mm. Other dimensions (indicated by arrows) are the values (mm) shown in Figures 24A, 24B, and 25A. Three magnetic elements 25 are arranged in the X direction to form a cathode device 10. Figure 24A shows the sputtering apparatus with the comparative magnetic element. Figures 24B and 25A show the magnetic element of the third embodiment shown in Figure 20. In the comparative magnetic element, the thickness is not reduced, and the central magnet portion is not eccentric in the X direction. The dashed line DL shown in Figure 24B corresponds to the Z-direction end face EL of the magnetic element shown in Figure 24A. In other words, the Z-direction length of the magnetic element in the first embodiment is shorter than that of the comparative magnetic element. This is because in the magnetic element of the first embodiment, a magnetic field can be formed neatly, and the plasma is not disordered, thus allowing for a shorter Z-direction length.

This section displays the film deposition specifications. • Condition 0 Target Composition: ITO (Indium Tin Oxide) Target Size: X-axis × Z-axis: 1800 mm × 2300 mm Target Thickness: 16 mm Substrate Size: X-axis × Z-axis: 1500 mm × 1850 mm Film Composition: ITO Film Thickness: 80 nm Power Supply (Plasma Generation Power): 15 kW Bias Power: Not Used Supply Gas and Gas Flow Rate: Ar 120 sccm Ambient Gas Pressure: 0.2 Pa Deposition Time: 53 sec

As a result, compared with magnetic elements of the same thickness, the film thickness distribution and sheet resistance distribution can be improved when using magnetic elements of reduced thickness.

The amount of excavation along the X direction of the target in the area near the outer periphery of the target's swinging area in the Z direction was measured. The results are shown in Figures 10 and 14.

Here, compared to magnetic elements with unreduced thickness, the minimum and maximum target excavation amounts are improved when using magnetic elements with reduced thickness.

<Experimental Example 2> Prepare the following three magnetic elements: ・Magnetic element with unreduced thickness ・Magnetic element 25 with reduced thickness ・A fourth embodiment of auxiliary magnetic element 27 is added to the magnetic element 25 with reduced thickness. The peak position of the horizontal magnetic field formed in each of the three magnetic elements is determined by simulation. The results are shown in Figures 15A and 16B. The specifications of the auxiliary magnetic element are shown below.

Auxiliary magnet 27, width in the X direction (width of the pole face): 185 mm Angle θ: 30° Wx: 17 mm Wy: 20 mm Auxiliary yoke 31d: SUS430

In Figure 15A, the positional variation of the peak position of the horizontal magnetic field formed by each magnetic element along the central axis 25Z of the magnetic element is shown. The same applies to Figure 15B. Here, the peak position of the magnetic element with unreduced thickness is shown as Experimental Example 2-0. The peak position of the magnetic element 25 with reduced thickness is shown as Experimental Example 2-1. The peak position of the magnetic element 25 with the addition of an auxiliary magnetic element 27 of a fourth embodiment in the reduced-thickness magnetic element 25 is shown as Experimental Example 2-2.

As shown in Figures 15A and 15B, the increase in magnetic field strength in the Z-direction from the outermost position of the magnetic element 25 is the same compared to the case where the thickness is not reduced. Simultaneously, in the magnetic element 25 with reduced thickness, the position where the magnetic field strength begins to weaken inwards shifts outwards in the Z-direction compared to the case where the thickness is not reduced. It can be seen that by using the magnetic element 25 with reduced thickness, the peak position of the horizontal magnetic field in the Z-direction shifts outwards along the central axis 25Z by approximately 20 mm compared to the case where the thickness is not reduced. The results show that by using a magnetic element 25 with reduced thickness, even if the length of the magnetic element 25 in the Z direction is shortened by about 20 mm compared to a magnetic element with unreduced thickness, the same magnetic field can still be generated.

As shown in Figures 15A and 15B, the increase in magnetic field strength in the Z-direction from the outermost position inward is the same for the case of a magnetic element 25 with an auxiliary magnet and reduced thickness compared to a magnetic element with no reduced thickness. Simultaneously, in the magnetic element 25 with an auxiliary magnet and reduced thickness, the position where the magnetic field strength begins to weaken inward shifts outward in the Z-direction compared to the case of a magnetic element with no reduced thickness. It can be seen that by using a magnetic element 25 with an auxiliary magnet and reduced thickness, the peak position of the horizontal magnetic field in the Z-direction shifts outward along the central axis 25Z by approximately 20 mm compared to the case of a magnetic element with no reduced thickness. The results show that by using a magnetic element 25 with auxiliary magnetism and reduced thickness, a magnetic field equivalent to that of a magnetic element with unreduced thickness can be generated, even if the length of the magnetic element 25 in the Z direction is shortened by about 20 mm compared to a magnetic element with unreduced thickness.

In Figures 16A and 16B, the peak position of the horizontal magnetic field formed by each magnetic element is shown as the positional variation along the X direction in the central region 25a of the magnetic element. Here, the peak position of the magnetic element with no reduction in thickness is shown as Experimental Example 2-0. The peak position of the magnetic element 25 with reduced thickness is shown as Experimental Example 2-1. The peak position of the magnetic element 25 with the addition of an auxiliary magnetic element 27 of a fourth embodiment in the reduced-thickness magnetic element 25 is shown as Experimental Example 2-2.

As shown in Figures 16A and 16B, the magnetic field strength generated in the central region 25a shows little difference in the X-direction when using magnetic element 25 with reduced thickness and magnetic element with no reduced thickness. Therefore, it can be seen that in the magnetic element 25L located at the end in the X-direction, there is a difference in the peak values of the following two magnetic field strengths. [Magnetic Field Strength E] is the peak value of the magnetic field strength formed in the magnetic unit 25L located at the oscillating end in the X direction, near the second long side straight section 62 of the peripheral magnet section 60 located at the very end in the X direction. [Magnetic Field Strength F] is the peak value of the magnetic field strength formed by the first long side straight section 61 adjacent to the oscillating region on the inner side, separated by the long side straight section 51. Furthermore, it can be seen that the magnetic field strength E is approximately 0.9 (0.027/0.030) smaller than the magnetic field strength F.

Furthermore, it is known that the peak values of the magnetic field strengths formed by the first long side straight section 61 of the peripheral magnet section 60 for each of the three magnetic units 25L, 25M, and 25N differ as follows: [Magnetic Field Strength G] is the maximum peak value of the magnetic field strength in the region near the first long side straight section 61 of the magnetic unit 25M, which is located in the center of the X-direction. [Magnetic Field Strength H] is the maximum peak value of the magnetic field strength in the region near the first long side straight section 61 of adjacent magnetic units 25L and 25N. Moreover, the magnetic field strength G is approximately 0.983 (0.0295/0.030) smaller than the magnetic field strength H.

<Experimental Example 3> Figure 25B shows a magnetic element 25 having a second corner portion 64 and a first corner portion 65 with inclined portions, as described in the second embodiment, and an eccentric central magnet portion 50. Using the magnetic element shown in Figure 25B, film deposition was performed in the same manner as in Experimental Example 2. Furthermore, the length in the Z direction of the magnetic element shown in Figure 25B was set to 2340 mm. Other dimensions (indicated by arrows) are the values (mm) shown in Figure 25B. Even with the magnetic element 25 having inclined corner portions, the same results were obtained as with the magnetic element having corner portions with stepped formations.

1: Sputtering apparatus 2, 2a: Loading/unloading chamber (vacuum chamber) 3: Transfer chamber (vacuum chamber) 3a: Transfer device (transfer robot) 4: Film forming chamber (vacuum chamber) 4A: Film forming chamber (vacuum chamber) 4a: Transfer port 4b: Film forming port 10: Cathode apparatus 11: Glass substrate (substrate to be formed, transparent substrate) 11a: Processed surface (film forming surface) 13: Substrate holding part (substrate holding mechanism) 14: Gas control part 20: Mask 22: Cathode unit 23: Target 23a: Surface 24: Backplate 25: Magnetic unit (magnetic circuit) 25a: Central area 25b: End area 25L, 25M 25N: Magnetic unit 25Z: Central axis 26: Control section 27: Auxiliary magnetic element 27a: Protrusion 27g: Fixing component 28: Anode 29: Magnetic unit scanning section 30: Magnetic pole surface (magnetic pole plane) 31: Yarn 31d: Auxiliary yoke 41: Front space 42: Rear space 50: Central magnet section 51, 61, 62: Long side straight section 51a, 54a, 56c, 56d, 61a, 62a, 66a: End point (end face) 52, 53, 54: Straight section 56: Narrow section 60: Peripheral magnet section 61c, 62c, 66c, 641b, 642b, 643b, 645b, 651b, 652b, 653b, 655b: Inner peripheral surface (inner peripheral part) 61d, 62d, 641a, 642a, 643a, 645a, 651a, 652a, 653a, 655a: Outer peripheral surface (outer peripheral part) 63: Bridging section 64, 65: Corner section 66: Short side straight section 66b: End point 66d: Outer peripheral surface 641, 651: First corner magnet section 642, 652: Second corner magnet section 643, 653: 3rd corner magnet 645, 655: 4th corner magnet center: Central position DL: Dashed line E: Magnetic field strength EL: End face Forward: Swinging end position N: Pole PX0, PX1, PZ0: Symbols Reverse: Swinging end position S: Pole X, Y, Z: Direction/Axis θ: Angle

Figure 1 is a schematic top view showing the sputtering apparatus of the first embodiment of the present invention. Figure 2 is a schematic side view showing the film-forming chamber of the sputtering apparatus of the first embodiment of the present invention. Figure 3 is a schematic diagram showing the positional relationship between the glass substrate and the cathode device of the sputtering apparatus of the first embodiment of the present invention. Figure 4 is a front view showing the positional relationship between the glass substrate, the target, and the magnetic element of the sputtering apparatus of the first embodiment of the present invention. Figure 5 is an enlarged cross-sectional view showing the end of the magnetic element of the sputtering apparatus of the first embodiment of the present invention. Figure 6 is an enlarged front view showing the end of the magnetic element of the sputtering apparatus of the first embodiment of the present invention. Figure 7 is a diagram illustrating the function of the magnetic element in the sputtering apparatus. Figure 8 is a diagram illustrating the function of the magnetic element in the sputtering apparatus. Figure 9 is a diagram illustrating the function of the magnetic element in the sputtering apparatus. Figure 10 is a diagram illustrating the function of the magnetic element in the sputtering apparatus. Figure 11 is a diagram illustrating the function of the magnetic element in the sputtering apparatus of the first embodiment of the present invention. Figure 12 is a diagram illustrating the function of the magnetic element in the sputtering apparatus of the first embodiment of the present invention. Figure 13 is a diagram illustrating the function of the magnetic element in the sputtering apparatus of the first embodiment of the present invention. Figure 14 is a diagram illustrating the function of the magnetic element in the sputtering apparatus of the first embodiment of the present invention. Figure 15A is a diagram illustrating the function of the magnetic element in the sputtering apparatus of the first embodiment of the present invention. Figure 15B is a diagram illustrating the function of the magnetic element in the sputtering apparatus of the first embodiment of the present invention. Figure 16A is a diagram illustrating the function of the magnetic element in the sputtering apparatus of the first embodiment of the present invention. Figure 16B is a diagram illustrating the function of the magnetic element in the sputtering apparatus of the first embodiment of the present invention. Figure 17 is an enlarged front view showing the end of the magnetic element in the sputtering apparatus of the second embodiment of the present invention. Figure 18 is a diagram illustrating the function of the magnetic element in the sputtering apparatus of the second embodiment of the present invention. Figure 19 is a diagram illustrating the function of the magnetic element in the sputtering apparatus of the second embodiment of the present invention. Figure 20 is an enlarged front view showing the end of the magnetic element in the sputtering apparatus of the third embodiment of the present invention. Figure 21 is an enlarged cross-sectional view showing the end of the magnetic element in the sputtering apparatus of the fourth embodiment of the present invention. Figure 22 is a diagram illustrating the function of the magnetic element in the sputtering apparatus of the fourth embodiment of the present invention. Figure 23 is a diagram illustrating the function of the magnetic element in the sputtering apparatus of the fourth embodiment of the present invention. Figure 24A is a diagram illustrating a comparative example of the sputtering apparatus. Figure 24B is a diagram illustrating an embodiment of the sputtering apparatus of the present invention. Figure 25A is a diagram illustrating an embodiment of the sputtering apparatus of the present invention. Figure 25B is a diagram illustrating an embodiment of the sputtering apparatus of the present invention. Figure 26 is a diagram illustrating the function of the magnetic unit in the sputtering apparatus of the first embodiment of the present invention.

1: Splash plating equipment

2,2a: Loading and unloading chamber (vacuum chamber)

3: Transfer chamber (vacuum chamber)

3a: Conveying device (conveying robot)

4: Film-forming chamber (vacuum chamber)

4A: Film-forming chamber (vacuum chamber)

4a:Transport port

4b: Film-forming orifice

10: Cathode Device

11: Glass substrate (film-forming substrate, transparent substrate)

13: Substrate Holding Section (Substrate Holding Mechanism)

14: Gas Control Department

41:Front space

42: Rear Space

Claims (11)

A sputtering apparatus includes a cathode unit that emits sputtering particles onto a substrate having a substrate surface; and the cathode unit has: a target for forming an etching region; a magnetic unit disposed on the side opposite to the target and the substrate, forming the etching region on the target; and a magnetic unit scanning unit that reciprocates the magnetic unit relative to the substrate between a first oscillation end and a second oscillation end along the oscillation direction of the substrate surface; the sputtering apparatus has an anode disposed around the end of the target; and an oscillation region is formed between the first oscillation end and the second oscillation end. The aforementioned oscillation region has: a contour edge along the long side of the aforementioned magnetic element, and a central portion along the long side of the aforementioned magnetic element; the aforementioned magnetic element extends along the surface of the aforementioned substrate in an oscillation width direction intersecting the aforementioned oscillation direction; the magnetic force density generated at the end of the aforementioned oscillation region near the aforementioned contour edge and the magnetic force density generated at the aforementioned central portion of the aforementioned oscillation region are homogenized; at the end of the aforementioned oscillation region near the aforementioned contour edge, a magnetic field is formed between the aforementioned magnetic element and the aforementioned target that is not directed toward the aforementioned anode but toward the aforementioned target; and the aforementioned magnetic element has: The first magnetic pole, i.e., the central magnetic section, is arranged in a straight line to form a magnetic boundary toward the aforementioned target; and the second magnetic pole, i.e., the peripheral magnetic section, forms a magnetic boundary toward the aforementioned target, and its polarity is different from that of the first magnetic pole; the peripheral magnetic section has two long-side straight sections and a bridging section; the two long-side straight sections are located on both sides of the central magnetic section, are equally spaced from the central magnetic section, and extend parallel to each other in the long-side direction; the bridging section connects the ends of each of the two long-side straight sections; the peripheral magnetic section surrounds the periphery of the central magnetic section along the aforementioned oscillation region; the aforementioned magnetic force density generated in the aforementioned central section of the aforementioned oscillation region and the aforementioned magnetic force density generated at the aforementioned ends of the aforementioned oscillation region are homogenized; The aforementioned bridge joint has a corner section; and the thickness of the aforementioned corner section in the aforementioned swing direction is smaller than the thickness of each of the aforementioned central section and the aforementioned two long straight sections in the aforementioned swing direction in the aforementioned long side direction. As in the sputtering apparatus of claim 1, the aforementioned bridging portion includes: the aforementioned corner portion connected to each of the aforementioned two long-side straight portions; and a short-side straight portion connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, along the aforementioned swing direction in the outline of the aforementioned swing area; and the thickness of the aforementioned short-side straight portion is substantially equal to the thickness of each of the aforementioned two long-side straight portions. As in the sputtering apparatus of claim 1, the aforementioned bridging portion includes: the aforementioned corner portion connected to each of the aforementioned two long-side straight portions; and a short-side straight portion connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, along the aforementioned swing direction in the outline of the aforementioned swing area; and compared to the outer periphery shape of the aforementioned swing area formed by the extension lines of the aforementioned short-side straight portions and the extension lines of the aforementioned long-side straight portions, the aforementioned corner portion is closer to the aforementioned central magnet portion along the outer periphery shape of the aforementioned swing area. As in the sputtering apparatus of claim 1, the aforementioned bridging portion includes: the aforementioned corner portion connected to each of the aforementioned two long-side straight portions; and a short-side straight portion connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, along the aforementioned swing direction in the outline of the aforementioned swing area; and the aforementioned corner portion is connected to the aforementioned short-side straight portion at a position closer to the aforementioned central portion along the aforementioned swing direction than the end of the aforementioned swing area in the outline of the aforementioned swing area. As in the sputtering apparatus of claim 1, the aforementioned bridging portion includes: the aforementioned corner portion connected to each of the aforementioned two long-side straight portions; and a short-side straight portion connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, extending along the aforementioned swing direction in the outline of the aforementioned swing region; and the length of the aforementioned short-side straight portion along the aforementioned swing direction in the outline of the aforementioned swing region is shorter along the aforementioned swing region than the separation distance of the aforementioned long-side straight portion of the aforementioned central portion along the aforementioned swing direction in the aforementioned swing direction. As in the sputtering apparatus of claim 1, the aforementioned bridging portion includes: the aforementioned corner portion connected to each of the aforementioned two long-side straight portions; and a short-side straight portion connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, along the aforementioned swing direction in the outline of the aforementioned swing area; and the length of the aforementioned corner portion in the aforementioned long-side direction is approximately equal to the separation distance between the aforementioned long-side straight portion and the aforementioned central portion in the aforementioned long-side direction along the aforementioned swing area and the aforementioned central magnet portion. As in the sputtering apparatus of claim 1, the aforementioned bridging portion includes: the aforementioned corner portion connected to each of the aforementioned two long-side straight portions; and a short-side straight portion connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, along the aforementioned swing direction in the outline of the aforementioned swing region; and the separation distance between the aforementioned short-side straight portion and the end of the aforementioned central magnet portion along the aforementioned swing region is formed to be smaller than the separation distance between the aforementioned long-side straight portion and the aforementioned central magnet portion along the aforementioned swing direction at the aforementioned central portion in the aforementioned long-side direction. As in the sputtering apparatus of claim 1, the aforementioned bridging portion comprises: the aforementioned corner portion connected to each of the aforementioned two long-side straight portions; and a short-side straight portion connected to the two aforementioned corner portions connected to the aforementioned two long-side straight portions, along the aforementioned swing direction in the outline of the aforementioned swing area; and the aforementioned central magnet portion having an end in the aforementioned long-side direction; the aforementioned central magnet portion having a narrow portion at the aforementioned end; and the thickness of the aforementioned narrow portion in the aforementioned swing direction being formed to be smaller than the thickness of the aforementioned central portion in the aforementioned swing direction in the aforementioned long-side direction. For example, in the sputtering apparatus of claim 8, the aforementioned narrow portion of the central magnet is arranged in the long side direction closer to the short side line portion than the aforementioned long side line portion. For example, in the sputtering apparatus of claim 1, the thickness of the aforementioned corner portion is not reduced compared to the aforementioned oscillation direction, and the aforementioned magnetic element has a shorter dimension in the aforementioned long side direction. The sputtering apparatus of any of claims 1 to 10, wherein the aforementioned magnetic units are arranged in a plurality of parallel configurations in the aforementioned oscillation direction.