TWI762872B - Sputtering apparatus - Google Patents

Abstract

An object of the present invention is to facilitate the opening and closing operation of a sputtering apparatus that makes the in-plane characteristic distribution of the thin film uniform. The solution is to support the weight of the electrode plates (28a) and (28b) on the target side in the vacuum chamber (11) composed of the target side vacuum chamber (11a) and the substrate side vacuum chamber (11b). In a vacuum chamber (11a), electrode plates (28a) and (28b) are arranged on the short sides of the target (13) to shorten the distance between the target (13) and the ground potential, and the electric The slurry is uniform. Since the inside of the substrate side vacuum chamber (11b) is reduced in weight, when the substrate side vacuum chamber (11b) is moved to open and close the vacuum chamber (11), the opening and closing operation is facilitated.

Description

Sputtering device

The present invention relates to a sputtering technique, and particularly to a sputtering technique for uniformizing the in-plane characteristic distribution of a metal thin film.

Thin film formation by sputtering is a widely used technique, and in recent years, in order to form a thin film on a large substrate, a technique for forming a thin film with uniform characteristic distribution on a large area substrate is required.

In the plasma device 102 of FIG. 9 (a plan view and a cross-sectional view taken along lines EE and FF), a target 113 is arranged on the front surface of the cathode electrode 112 , and an outer peripheral magnet 125 and an inner magnet 126 are arranged on the back surface. When the target 113 is sputtered, the plural magnet devices 115 ₁ to 115 ₄ of the yoke 127 form a thin film on the surface of the substrate 116 arranged on the substrate arrangement portion 114 opposite to the target 113 .

The anode electrode 117 is arranged on the outer periphery of the substrate 116, and the plasma formed on the surface of the target 113 is uniform.

However, when the size of the target 113 or the magnet devices 115 ₁ to 115 ₄ increases as the size of the substrate 116 increases, the area close to the short sides of the substrate 116 and the central portion therebetween are characteristics of the thin film to be formed. The difference will get bigger.

If the resistance value of the thin film in the short side portion is significantly different from that in the central portion, the light emission distribution of the light emitting layer formed on the surface of the substrate will be different, resulting in a screen with non-uniform brightness.

The following patent documents describe a magnetron sputtering apparatus corresponding to a large-sized substrate, in which a ground potential electrode coupled with a movable magnetron plasma is arranged to achieve uniformity of film quality and film thickness.

[Prior Art Literature] [Patent Literature]

[Patent Document 1]

Japanese Patent Application Laid-Open No. 07-331433

The present invention was made in order to solve the above-mentioned inadequacy of the prior art, and its object is to make the characteristic distribution of the thin film formed on the surface of the large substrate uniform, and in particular, to reduce the size of the substrate near the end of the elongated magnetron magnet. The difference between the thin film properties of the region near the edge and the thin film properties of the region near the center of the substrate.

Another object of the present invention is to reduce the weight of the vacuum chamber on the substrate side, and to enable opening and closing of the vacuum chamber with an easy operation.

In order to solve the above-mentioned problems, a sputtering apparatus of the present invention includes: a vacuum chamber; a target arranged inside the vacuum chamber; and a cathode electrode arranged on the back side of the target and connected to the A sputtering power supply; a plurality of magnet devices arranged on the back side of the cathode electrode; a substrate arrangement part for arranging the substrate; and a ring-shaped anode electrode connected to a ground potential and covering the outer periphery of the substrate In the above, each of the magnet devices is provided with an elongated annular outer peripheral magnet and an inner magnet arranged on the inner side thereof, and on the surface of the target is a magnetic flux formed between the outer peripheral magnet and the inner magnet on the inner side. Leakage, the target is sputtered to form a thin film on the surface of the substrate, characterized in that the outer peripheral magnet and the inner magnet system on the inner side are separated, and the area between the outer peripheral magnet and the inner magnet system on the inner side is a plasma domain system. An electrode plate connected to the ground potential is arranged between the two ends of the plasma field and the plane where the surface of the substrate is located, which is formed into an elongated annular shape. The TB distance between the surface of the electrode plate and the surface of the target is shorter than the TA distance between the surface of the anode electrode and the surface of the target, at both ends of the target along the plasma field On the two sides of the position, the aforementioned electrode plates are arranged.

In the sputtering apparatus of the present invention, the vacuum chamber is separable into a target-side vacuum chamber in which the target is arranged, and a substrate-side vacuum chamber in which the anode electrode is arranged, wherein the In a state where the target-side vacuum chamber and the substrate-side vacuum chamber are in close contact with each other, the target and the anode electrode are arranged vertically, and the weight of the electrode plate is supported by the target-side vacuum chamber.

When the target-side vacuum chamber is separated from the substrate-side vacuum chamber, the target-side vacuum chamber is in a stationary state, and the substrate-side vacuum chamber is moved.

In the sputtering apparatus of the present invention, the distance between the surface of the electrode plate and the surface of the target is greater than the TS distance between the surface of the target and the surface of the substrate arranged in the substrate arrangement portion 10% larger than 90%.

In the sputtering apparatus of the present invention, the target is a flat metal molybdenum plate, and the thin film is a metal molybdenum thin film.

Among the surfaces of the substrate, the difference in thin film properties between the region near the end of the elongated magnetron and the region in the center of the substrate becomes smaller, and the As a result, regarding the properties of the thin film formed on the rectangular substrate, the properties of the region near the short sides and the properties of the region sandwiched near the center of the region are uniform.

Since the electrode plate and the support member are supported by the target-side vacuum chamber, the inside of the substrate-side vacuum chamber is reduced in weight. Therefore, when the substrate-side vacuum chamber is moved to open and close the vacuum chamber, the opening and closing operation is facilitated.

2: Sputtering device

10: Plasma Field

11: Vacuum tank

11a: Target side vacuum tank

11b: Substrate side vacuum tank

13: Target

14: Substrate configuration section

15 ₁ ~15 ₄ : Magnet device

16: Substrate

17: Anode electrode

28a, 28b: Electrode plate

22: Sputtering power supply

[ Fig. 1 ] is a sputtering apparatus of the present invention.

2 is a plan view for explaining the internal structure of the sputtering apparatus of the present invention, and a cross-sectional view taken along line A-A and a cross-sectional view taken along line B-B.

3 is a plan view, a cross-sectional view taken along the line C-C, and a cross-sectional view taken along the line D-D for explaining the magnet device used in the present invention.

[ Fig. 4] (a) to (c) are cross-sectional views for explaining the operation of the magnet device.

[ Fig. 5] Fig. 5 is a diagram for explaining another example of the present invention.

6 is a schematic perspective view of the sputtering apparatus of the present invention.

[ Fig. 7 ] A bar graph for comparing temperature distributions of substrates.

8 is a sputtering apparatus in which an electrode plate is attached to an anode electrode.

[ Fig. 9] Fig. 9 is a diagram illustrating a conventional sputtering apparatus.

The code|symbol 2 of FIG. 1 is the sputtering apparatus of this invention, and has the vacuum chamber 11. As shown in FIG. FIG. 2 shows a portion inside the outer periphery of the anode electrode 17 to be described later. Plan view, and its A-A line truncated sectional view and B-B line truncated sectional view.

Inside the vacuum chamber 11 , a rectangular target 13 is arranged, and a cathode electrode 12 is arranged on the back side of the target 13 .

The surface of the cathode electrode 12 is in contact with the back surface of the target 13 .

A magnet case 51 is disposed on the back side of the cathode electrode 12 , and a plurality of (here, four) magnet devices 15 ₁ to 15 ₄ are disposed inside the magnet case 51 . The magnet devices 15 ₁ to 15 ₄ are called magnetron magnets.

The magnet devices 15 ₁ to 15 ₄ arranged on the back side of the cathode electrode 12 are basically of the same shape and size, and FIG. 3 shows a plan view of one magnet device 15 ₁ to 15 ₄ and a cross-sectional view taken along the line CC. Cutaway section of line DD.

The magnet devices 15 ₁ to 15 ₄ have a ring-shaped outer magnet 25 and a linear inner magnet 26 arranged in the outer magnet 25 . The magnet devices 15 ₁ to 15 ₄ are elongated and each has a longitudinal direction.

Here, the distances between the outer peripheral magnets 25 of the respective magnet devices 15 ₁ to 15 ₄ and the back surface of the target 13 are set to be equal, and the inner magnets 26 of the respective magnet devices 15 ₁ to 15 ₄ and the back surface of the target 13 are set equal. The distances between them are also set to be equal, but the present invention is not limited to this. In order to make the distribution of the film thickness and the distribution of the film quality uniform, the distances between the magnet devices 15 ₁ to 15 ₄ and the back surface of the target 13 may be They are different from each other, or the magnet devices 15 ₁ to 15 ₄ and the back surface of the target 13 are arranged non-parallel.

Here, the distance between the outer peripheral magnet 25 and the back surface of the target 13 and the distance between the inner magnet 26 and the back surface of the target 13 in each of the magnet devices 15 ₁ to 15 ₄ are also set to be equal. Among the magnet devices 15 ₁ to 15 ₄ , the magnet devices 15 ₁ to 15 ₄ in which the distances between the inner magnet 26 and the back surface of the target 13 are different, or between the outer peripheral magnet 25 and the back surface of the target 13 may be included. The distances are 15 ₁ ~15 ₄ for different magnet devices.

Of the two magnetic poles of the outer peripheral magnet 25, one magnetic pole is disposed toward the cathode electrode 12, and the other magnetic pole is disposed toward the opposite side of the cathode electrode 12 and is disposed in contact with the surface of the yoke 27, and the two magnetic poles of the inner magnet 26 are disposed. Among the magnetic poles, one magnetic pole is disposed toward the cathode electrode 12 , and the other magnetic pole is disposed toward the opposite side of the cathode electrode 12 and is disposed in contact with the surface of the yoke 27 .

Among the magnetic poles facing the cathode electrode 12 of the outer peripheral magnet 25 and the magnetic poles facing the cathode electrode 12 of the inner magnet 26 , one of the magnetic poles is N pole, the other magnetic pole is S pole, and the magnetic pole facing the cathode electrode 12 The magnetic flux formed during this time is leaked to the surface of the target 13 and is bent into an arch shape, so that the electron density on the surface of the target 13 is increased.

A position in the vacuum chamber 11 opposite to the surface of the target 13 is an arrangement stage 54 , and the substrate arrangement portion 14 is arranged on the stage 54 .

The substrate placement portion 14 has a rectangular shape, and a rectangular substrate 16 to be deposited on the substrate placement portion 14 is placed.

The substrate 16 is smaller than the target 13 . Hereinafter, if the inner side and the outer side are determined by the positional relationship when projected on the plane on which the surface of the substrate 16 is positioned on the substrate arrangement portion 14 , the outer periphery of the substrate 16 is smaller than the target 13 . The outer circumference of the is more arranged on the inner side.

The target 13 and the substrate 16 are arranged so that the long side of the target 13 and the long side of the substrate 16 are parallel, and the surface of the target 13 and the surface of the substrate 16 are also arranged parallel.

The length of the magnet devices 15 ₁ to 15 ₄ in the longitudinal direction is substantially the same as the length of the target 13 in the longitudinal direction, the long side of the substrate 16 is shorter than the length of the target 13 in the longitudinal direction, and the long side of the substrate 16 It is shorter than the length in the longitudinal direction of the magnet devices 15 ₁ to 15 ₄ .

Each of the magnet devices 15 ₁ to 15 ₄ is arranged on the moving plate 52 in a state where the back side of the yoke 27 is in contact with the moving plate 52 .

The longitudinal directions of the respective magnet devices 15 ₁ to 15 ₄ are parallel to each other, parallel to the long sides of the target 13 and the substrate 16 , and aligned in a line in the direction in which the short sides extend.

A moving device 53 is arranged outside the vacuum chamber 11. When the moving device 53 operates, the moving plate 52 moves along the surface of the target 13 on the back side of the target 13. The magnet devices 15 ₁ to 15 ₄ are Moves together with the moving plate 52 .

The magnetic flux leaking to the surface of the target 13 moves together with the movement of the magnet devices 15 ₁ to 15 ₄ .

During the movement, each of the magnet devices 15 ₁ to 15 ₄ maintains a constant distance without changing the distance between the outer peripheral magnet 25 and the back surface of the target 13 . In addition, the distance between the inner magnet 26 and the back surface of the target 13 is not changed, and a constant distance is maintained.

Therefore, each of the magnet devices 15 ₁ to 15 ₄ moves in a plane parallel to the back surface of the target 13 together with the movement of the moving plate 52 . FIG. 4( a ) shows a state in which each of the magnet devices 15 ₁ to 15 ₄ is located in the center of the range in which each of the magnet devices 15 ₁ to 15 ₄ moves, and FIG. 4( b ) shows a state in which it is located at the right end of the drawing, The same figure (c) shows the state located at the left end of the drawing, and it repeatedly moves between the state of the same figure (b) and the state of the same figure (c).

Next, between the substrate 16 and the target 13 is an anode electrode 17 connected to the ground potential.

The anode electrode 17 has a quadrangular ring shape, and an opening 19 is formed in the center. The outer periphery and the inner periphery of the anode electrode 17 are rectangular shapes, and the outer periphery of the anode electrode 17 is located outside the outer periphery of the substrate 16 arranged in the substrate arrangement portion 14 .

In this example, the inner circumference of the anode electrode 17 is a region located closer to the center of the substrate 16 than the edge of the substrate 16 , and the two long sides of the square ring shape of the anode electrode 17 are arranged on the long sides of the substrate 16 . The two short side parts are arranged on the short side of the substrate 16, the outer periphery of the substrate 16 on the substrate arrangement portion 14 is covered by the anode electrode 17, and the bottom surface of the opening 19 is more than the outer periphery of the substrate 16. The inner part will be exposed.

A vacuum exhaust device 21 and a gas introduction device 23 are connected to the vacuum chamber 11 , the vacuum chamber 11 is evacuated by the vacuum exhaust device 21 , and a vacuum environment is formed inside the vacuum chamber 11 .

Outside the vacuum chamber 11 is provided a sputtering power source 22 electrically connected to the cathode electrode 12. The sputtering gas is introduced from the gas introduction device 23 to the interior of the vacuum chamber 11 forming a vacuum environment. A sputtering voltage is applied to the cathode electrode 12 from the sputtering power supply 22 .

The target 13 is a flat target in which a metal is formed in a plate shape, and while the magnet devices 15 ₁ to 15 ₄ are moved, a plasma of sputtering gas is formed in the vicinity of the surface of the target 13 .

The positive ions of the sputtering gas in the plasma are accelerated, the particles of the sputtering gas will be injected into the target 13, the target 13 will be sputtered, and the particles of the substance constituting the target 13 will be sputtered from the target 13. The surface release of the film flies toward the substrate 16, reaches the surface of the substrate 16, and grows the thin film.

Once a thin film of a predetermined thickness is formed on the surface of the substrate 16 , the substrate placement portion 14 and the substrate 16 are carried out to the outside of the vacuum chamber 11 , and the substrate placement portion 14 on which the substrate 16 not formed into a film is placed is loaded into the vacuum chamber 11 . internal.

In this way, the thin film is formed on the surface of the substrate 16 according to the present invention, but the resistance value of the metal thin film formed on the surface of the large substrate 16 varies depending on the position of the substrate 16 .

The distribution of the resistance value has a close relationship with the intensity distribution of the plasma. When describing the plasma of the sputtering apparatus 2, first, the distribution between the outer magnets 25 and the inner magnets 26 of the magnet devices 15 ₁ to 15 ₄ is located between the outer magnets 25 and the inner magnets 26 The spot on the surface of the target 13 where the plasma of a large intensity is formed has the characteristics of magnetron sputtering.

The outer peripheral magnet 25 of each of the magnet devices 15 ₁ to 15 ₄ is formed in an elongated annular shape in order to enlarge the area of the target to be sputtered, and since the inner magnet 26 has a linear shape, the outer peripheral magnet 25 and the inner magnet 26 The gap between is formed into an elongated annular shape. Since the plasma is formed in the same shape as the gap, the formed high-intensity plasma also has a ring shape for each of the magnet devices 15 ₁ to 15 ₄ .

The elongated annular shape of the plasma is known to have greater plasma intensity at the ends than in the straight portion. In particular, since the ends of the magnet devices 15 ₁ to 15 ₄ are arranged in a straight line, the ends of the plurality of elongated annular-shaped plasmas are aligned in parallel with each other in a state of being arranged in a straight line, and the annular-shaped plasmas are arranged in a straight line. The plasma intensity of the portion where the ends of the ring-shaped plasma are aligned will be greater than the plasma intensity of the portion of the long side of the plasma of the annular shape.

The plasma at the arranged end portion grows the thin film in the vicinity of the short side of the substrate 16 , and the long side portion of the plasma grows the thin film in the vicinity of the long side of the substrate 16 , in the central region of the surface of the substrate 16 and the The area near the short side and the area near the long side have different properties of the film.

The short sides of the anode electrodes 17 are respectively arranged in parallel to the areas where the ends of the magnet devices 15 ₁ to 15 ₄ are arranged, and the two short sides of the anode electrodes 17 are respectively arranged outside the edge of the substrate 16 . There are electrode plates 28a, 28b.

The unused target 13 before sputtering is parallel to the cathode electrode 12 , the electrode plates 28 a and 28 b , and the anode electrode 17 .

The two electrode plates 28a, 28b are parallel to each other and longer than the short side of the target 13, and are parallel to the short sides 33a, 33b of the target 13, parallel to the short side of the anode electrode 17, and the cathode electrode 12, respectively. The short sides of the two parallel edges 31a, 31b, 32a, 32b.

Of the two edges 31a, 31b, 32a, 32b of the electrode plates 28a, 28b parallel to the short sides 33a, 33b of the target 13, one of the edges 31a, 31b is located outside the short sides of the target 13, The other edges 32a and 32b are located closer to the center of the target 13 than the short sides.

Therefore, the vicinity of the short sides 33a and 33b of the target 13 is The polar plates 28a, 28b cover only a certain distance from the short sides 33a, 33b to the inside.

The cathode electrode 12 is fixed to the wall surface of the vacuum chamber 11 through the insulating plate 24 , and the cathode electrode 12 and the vacuum chamber 11 are insulated by the insulating plate 24 . On the wall surface of the vacuum chamber 11 , a ring-shaped blocking ring 36 is provided, and the target 13 is arranged inside the blocking ring 36 . The outer peripheral surface of the target 13 and the inner peripheral surface of the stopper ring 36 are arranged to be separated by a predetermined distance.

Support bodies 29a and 29b are attached to the surface of the portion of the guard ring 36 where the side faces face the sides where the short sides 33a and 33b of the target 13 are located, and the electrode plates 28a and 28b are attached to the support bodies 29a and 29b. 29b.

The electrode plates 28a, 28b, the anti-stick ring 36, and the supports 29a, 29b are electrically conductive, and the electrode plates 28a, 28b are electrically connected to the anti-stick ring 36 via the supports 29a, 29b.

The vacuum chamber 11 is connected to the ground potential, the guard ring 36 is in contact with the vacuum chamber 11 and is connected to the ground potential, so the electrode plates 28a, 28b are connected to the ground potential. The anode electrode 17 is also connected to ground potential.

If the areas between the outer peripheral magnets 25 of the magnet devices 15 ₁ to 15 ₄ and the inner magnets 26 located inside the magnet devices 15 ₁ to 15 ₄ are defined as the plasma areas 10 of the magnet devices 15 1 to 15 4, respectively, the magnet devices 15 ₁ to 15 Both ends of the outer peripheral magnet 25 of ₄ are bent into a semicircle, and subsequently, both ends of the plasma field 10 are also bent into a semicircle. As a result, the outer peripheral magnet 25 and the plasma field 10 are respectively formed into racetrack shapes. shape.

The lengths in the longitudinal direction of the plasma domains 10 of the respective magnet devices 15 ₁ to 15 ₄ are equal, the distances between the plasma domains 10 and the plane where the anode electrode 17 is located are equal, and both ends of the plasma domains 10 are curved. Among the parts, the curved parts of one end are arranged in a horizontal line, and the curved parts of the opposite end are also arranged in a horizontal line.

Among the curved portions at both ends of each plasma domain 10 , one end portion is provided with a single electrode plate 28 a between the curved portions arranged in a horizontal row and the plane where the surface of the substrate 16 is located, and the opposite side is provided with one electrode plate 28 a. The other electrode plate 28b is arranged between the curved portion arranged in a horizontal row and the plane where the surface of the substrate 16 is located.

The surface of the target 13 faces the long-side portion of the anode electrode 17 on the long-side portion of the anode electrode 17 and faces the surfaces of the electrode plates 28 a and 28 b on the short-side portion of the anode electrode 17 .

Assuming that the distance between the surface of the target 13 and the surface of the substrate 16 is the TS distance, the distance between the surface of the target 13 and the surface of the long side portion of the anode electrode 17 is the TA distance, and the surface of the target 13 is When the distance between the surfaces of the electrode plates 28a and 28b is the TB distance, the following three equations are established.

TA<TS, TB<TS, TB<TA

At the position directly next to the long side of the substrate 16, the member closest to the ground potential of the target 13 is the surface of the anode electrode 17 opposite to the target 13, and at the position directly next to the long side of the substrate 16, the target 13 is closest to the target 13. The surfaces of the members close to the ground potential of the target 13 are separated only by the TA distance.

At the position immediately beside the short side of the substrate 16, the member closest to the ground potential of the target 13 is the surface of the electrode plates 28a, 28b opposite to the target 13, and at the position immediately beside the short side of the substrate 16, the target 13 The surface of the member closest to the ground potential of the target 13 is separated only by the TB distance.

Therefore, the distance between the target 13 and the surface of the member closest to the ground potential of the target 13 is shorter than the position directly beside the short side of the substrate 16 than the position directly beside the long side.

In particular, by the electrode plates 28a, 28b, the distance between the target 13 and the ground potential is shortened on the outer side of the edge of the substrate 16, and the electrode plates 28a, 28b attract the plasma on the inner side of the edge of the substrate 16, Therefore, on the outer side of the edge of the substrate 16 , the plasma intensity on the outer side of the short side of the substrate 16 where the electrode plates 28 a and 28 b are located becomes stronger, and as a result, the plasma intensity on the substrate 16 near the short side of the substrate 16 becomes stronger. Small. In short, when the electrode plates 28a and 28b are not present, the plasma in the portion close to both ends in the longitudinal direction of the plasma field 10 on the substrate 16 is stronger than the plasma in other portions on the substrate 16, but by providing Electrode plates 28a and 28b have lower plasma intensity at the portions close to both ends of the plasma field 10 on the substrate 16 in the longitudinal direction. As a result, the plasma intensity on the substrate 16 is uniformized and the characteristics of the formed thin film are reduced. The distribution will be normalized.

If the TB distance is not larger than 10% of the TS distance between the surface of the target 13 and the surface of the substrate 16 arranged in the substrate arrangement portion 14, the characteristic distribution will be degraded on the contrary, and if it is not smaller than 90%, the effect will be weakened. The situation is confirmed.

Electrode plates 28 a and 28 b are provided on the curved portions of both ends of the plasma field 10 , and the distance between the electrode plates 28 a and 28 b and the target 13 is the distance between the electrode plates 28 a and 28 b and the target 13 when facing the surface of the target 13 . shortest. As described above, the plasma intensity on the electrode plates 28a, 28b increases.

The electrode plates 28a and 28b are arranged outside the substrate 16 As a result of the increase in the plasma intensity on the outside of the substrate 16, the plasma intensity on the substrate 16 decreases in the vicinity of the edge of the substrate 16 where the electrode plates 28a and 28b are close, so that the plasma intensity on the substrate 16 decreases. By making it uniform, the distribution of the resistance value in the surface of the substrate 16 becomes uniform.

Next, if the vacuum chamber 11 of this invention is demonstrated, the vacuum chamber 11 of this invention is comprised by the target side vacuum chamber 11a and the board|substrate side vacuum chamber 11b. The target-side vacuum chamber 11a and the substrate-side vacuum chamber 11b can be brought into close contact with each other at the edges, and in a state of close contact, an airtight vacuum chamber is formed.

In the present invention, the cathode electrode 12 , the target 13 , the guard ring 36 and the anode electrode 17 are formed vertically, and the cathode electrode 12 is attached to the vertical wall surface of the target side vacuum chamber 11 a via the vertical insulating plate 24 . The retaining ring 36 is attached to the same wall.

The target 13 is provided on the surface of the cathode electrode 12 on the opposite side to the surface in contact with the insulating plate 24 , and is located on the inner periphery of the guard ring 36 .

The electrode plates 28 a and 28 b are also attached to the wall surface to which the cathode electrode 12 , the target 13 and the retaining ring 36 are fixed via the supports 29 a and 29 b and the retaining ring 36 . Therefore, the weight of the electrode plates 28a and 28b is supported by the target side vacuum tank 11a.

During sputtering, the target-side vacuum chamber 11a and the substrate-side vacuum chamber 11b are air-tightly connected, and the substrate-side vacuum chamber 11b is provided with a vertical anode electrode 17, a substrate placement portion 14 and a substrate-side vacuum chamber 11b. The substrate 16 of the arrangement portion 14 is carried in from the outside to the inside of the vacuum chamber 11 in a vertical state, and is arranged between the anode electrode 17 and the vertical wall surface of the substrate-side vacuum chamber 11b.

During maintenance, the inside of the vacuum chamber 11 is at normal pressure, and the target side vacuum chamber 11 a and the substrate side vacuum chamber 11 b are separated as shown in the schematic perspective view of FIG. 6 .

Reference numeral 55 in FIG. 6 is a pedestal, and the target-side vacuum chamber 11a is provided on the pedestal 55 and is fixed to the ground. Therefore, the weight of the target-side vacuum chamber 11 a is supported by the stand 55 .

On the other hand, the substrate-side vacuum chamber 11b is not fixed to the pedestal 55, but is attached to the target-side vacuum chamber 11a in an airtight manner. In FIG. 6, the supports 29a, 29b are omitted.

6 shows a state in which the target-side vacuum chamber 11a is not moved, the substrate-side vacuum chamber 11b is moved to separate the target-side vacuum chamber 11a from the substrate-side vacuum chamber 11b, supports 29a, 29b and electrode plates 28a, 28b The weight is supported by the pedestal 55 via the target side vacuum tank 11a.

8 shows the sputtering apparatus when electrode plates 28a, 28b and supports 29a, 29b of the present invention are removed from the wall surface of the vacuum chamber 11, and the electrode plates 18a, 18b are provided on the anode electrode 17 by the supports 39a, 39b 132.

Temperatures were measured at plural same places in the substrate surface of the sputtering apparatus 2 of the present invention and the sputtering apparatus 132 of FIG. 8 . The measurement results are shown in the graph of FIG. 7 . The temperature distribution is roughly the same.

In addition, the sheet resistance value Rs when the molybdenum thin film was formed in the sputtering apparatus 2 of the present invention was 0.0760Ω/□±18.7%, and the film thickness distribution was 3915ű14.6%.

In the sputtering apparatus 132 of FIG. 8 , it is about the same as 0.0804Ω/□±18.2%, and the film thickness distribution is 3805ű14.1%, which are equivalent characteristics.

The film thickness distribution is shown in the table below.

However, in the case of the sputtering apparatus 132 of FIG. 8, the electrode plates 18a, 18b and the supports 39a, 39b are supported by the substrate-side vacuum chamber via the anode electrode 17, so the substrate-side vacuum chamber is separated from the target-side vacuum chamber The weight of the interior becomes large, and the separation between the target-side vacuum chamber and the substrate-side vacuum chamber is difficult.

In addition, the two support bodies 29a, 29b are each a single plate, but as in the sputtering apparatus 3 shown in FIG. 28b.

In addition, the plasma field 10 may have an endless or annular shape, and the case where both ends of the outer peripheral magnet 25 are square or elliptical is also included in the present invention.

In addition, the case where the ends of the magnet devices 15 ₁ to 15 ₄ are not arranged on the same straight line, or the case where the distance between the ends of the magnet devices 15 ₁ to 15 ₄ and the cathode electrode 12 is not constant is also included. this invention.

In addition, the electrode plates 28 a and 28 b are located on the side of the anode electrode 17 , one of the two parallel sides is located outside the side of the substrate 16 , and the other side is located more inside than the side of the target 13 .

The two electrode plates 28a and 28b have two parallel sides, respectively, and the electrode plates 28a and 28b have, for example, a rectangular shape.

Among both ends of the plasma field 10 , a single electrode plate 28 a is arranged between the curved portion lined up at one end of the plasma field 10 and the plane where the surface of the substrate 16 is located, and the plasma field 10 The other electrode plate 28b is arranged between the curved portion arranged in a line and the end portion on the opposite side of the substrate 16 and the plane where the surface of the substrate 16 is located.

In addition, among the two sides of the electrode plates 28a and 28b, the side farther from the center of the target 13 may be extended to the outside of the curved portion of the plasma field 10, and the side near the center of the target 13 is also Bends that can extend into the plasma field 10 the inside of the curved part. Also, it may be extended from both sides.

In addition, the above-mentioned target 13 is metal molybdenum, and the present invention is not limited to metal molybdenum. The sputtering device 2 of the present invention is suitable for metal titanium, molybdenum alloy, aluminum, aluminum alloy, metal tungsten, pure copper, copper alloy, tantalum, etc. The target 13 made of metal can achieve the effect of the present invention.

2: Sputtering device

11: Vacuum tank

11a: Target side vacuum tank

11b: Substrate side vacuum tank

12: Cathode electrode

13: Target

14: Substrate configuration section

15 ₁ ~15 ₄ : Magnet device

16: Substrate

17: Anode electrode

19: Opening

21: Vacuum exhaust device

22: Sputtering power supply

23: Gas introduction device

24: Insulation board

28a: Electrode plate

29a: Support body

36: Anti-lock ring

51: Magnet Box

52: Mobile board

53: Mobile Devices

54: Configuration Desk

Claims (3)

A sputtering apparatus comprising: a vacuum chamber; a target arranged inside the vacuum chamber; a cathode electrode arranged on the back side of the target and connected to a sputtering power source; a plurality of magnets A device, which is arranged on the back side of the cathode electrode; a substrate arrangement part, which arranges the substrate; and a ring-shaped anode electrode, which is connected to the ground potential and covers the outer periphery of the substrate, in each of the magnet devices. An outer peripheral magnet of an elongated annular shape and an inner magnet arranged inside it are provided, and a magnetic flux leakage formed between the outer peripheral magnet and the inner magnet inside the target is formed on the surface of the target, and the target is sputtered. A thin film is formed on the surface of the substrate, characterized in that the outer peripheral magnet and the inner magnet on the inner side are separated, and the plasma area of the area between the outer peripheral magnet and the inner magnet on the inner side is formed into an elongated annular shape between the two ends of the short side of the elongated annular shape of the plasma field and the plane where the surface of the substrate is located, an electrode plate connected to the ground potential is arranged, and the surface of the electrode plate is connected to the mark. TB distance between target surfaces The TA distance between the surface of the anode electrode and the surface of the target is shorter than that of the target, and the target is arranged only on both sides of the target along the two ends of the short side of the plasma field. The electrode plate and the vacuum chamber are separable into a target-side vacuum chamber in which the target is arranged, and a substrate-side vacuum chamber in which the anode electrode is arranged, and the target-side vacuum chamber and the target-side vacuum chamber are arranged to be separated. In a state in which the substrate side vacuum tank is in close contact and connected, the target and the anode electrode are arranged vertically, the weight of the electrode plate is supported by the target side vacuum tank, and the target side is evacuated. When the tank is separated from the substrate-side vacuum tank, the target-side vacuum tank is in a stationary state, and the substrate-side vacuum tank is moved. The sputtering apparatus according to claim 1, wherein the TB distance is larger than 10% and smaller than 90% of the TS distance between the surface of the target and the surface of the substrate arranged in the substrate arrangement portion. The sputtering apparatus according to claim 1 or 2, wherein the target is a flat metal molybdenum plate, and the thin film is a metal molybdenum thin film.

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