JP2003239069A - Method and system for manufacturing thin film - Google Patents
Method and system for manufacturing thin filmInfo
- Publication number
- JP2003239069A JP2003239069A JP2002037825A JP2002037825A JP2003239069A JP 2003239069 A JP2003239069 A JP 2003239069A JP 2002037825 A JP2002037825 A JP 2002037825A JP 2002037825 A JP2002037825 A JP 2002037825A JP 2003239069 A JP2003239069 A JP 2003239069A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- magnetron
- thin film
- sputtering
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims description 17
- 239000010408 film Substances 0.000 claims abstract description 48
- 238000004544 sputter deposition Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 210000002381 plasma Anatomy 0.000 claims abstract description 29
- 239000013077 target material Substances 0.000 claims abstract description 28
- 230000003628 erosive effect Effects 0.000 claims description 11
- 239000000470 constituent Substances 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 229910020923 Sn-O Inorganic materials 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- 229910007541 Zn O Inorganic materials 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 238000005546 reactive sputtering Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 12
- 229910001882 dioxygen Inorganic materials 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 229910018516 Al—O Inorganic materials 0.000 description 4
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、透明導電膜のよう
な薄膜の製造方法及び製造装置に関するものでありし、
一層特に本発明は、液晶ディスプレイ又はプラズマディ
スプレイなどの各種フラットパネルディスプレイ、或い
は太陽電池などに用いるＩｎ−Ｏ又はＳｎ−Ｏ又はＺｎ
−Ｏを基本構成元素とする酸化物透明導電膜の製造方法
及び製造装置に関するものである。TECHNICAL FIELD The present invention relates to a method and an apparatus for manufacturing a thin film such as a transparent conductive film,
More particularly, the present invention is an In-O or Sn-O or Zn used for various flat panel displays such as liquid crystal displays or plasma displays, or solar cells.
The present invention relates to a method and an apparatus for manufacturing an oxide transparent conductive film containing -O as a basic constituent element.
【０００２】[0002]
【従来の技術】従来、この種の透明導電膜の製造は、大
面積基板への均一な膜形成や制御性の面で優れるため、
基板の大面積化が進むフラットパネルディスプレイを中
心にスパッタ法が多く用いられるようになってきてい
る。2. Description of the Related Art Conventionally, the production of this type of transparent conductive film is excellent in terms of uniform film formation on a large area substrate and controllability.
The sputtering method has been widely used mainly for flat panel displays in which the area of the substrate is increasing.
【０００３】一般的に、スパッタ法による薄膜形成で
は、析出速度の改善のためターゲット上に形成されたル
ープ状の磁場に電子をトラップし局所的に高密度のプラ
ズマを発生させる手法（マグネトロンスパッタ法）が用
いられている。しかしながら、マグネトロンスパッタ法
ではプラズマが局所的に発生することから、ターゲット
上でのスパッタ発生領域（エロージョン）も局在し、そ
のためターゲットの利用効率が低く、ランニングコスト
を大きくする１つの原因となっている。Generally, in forming a thin film by a sputtering method, a method of trapping electrons in a loop-shaped magnetic field formed on a target to locally generate high-density plasma in order to improve the deposition rate (magnetron sputtering method). ) Is used. However, since the plasma is locally generated in the magnetron sputtering method, the sputtering generation area (erosion) on the target is also localized, which is one of the causes of low target utilization efficiency and high running cost. There is.
【０００４】これに対し、カソード背面に配置するマグ
ネトロン磁気回路を、カソードに対し揺動させ、それに
伴いエロージョンをターゲット上で移動させることによ
り、上記問題点を改善する技術が用いられているが、こ
の場合ターゲット幅を大きくする必要があり、それに伴
うターゲット材や装置長のコストアップが問題となる。On the other hand, there is used a technique for improving the above problems by swinging the magnetron magnetic circuit arranged on the back surface of the cathode with respect to the cathode and moving the erosion on the target accordingly. In this case, it is necessary to increase the target width, which causes a problem of cost increase of the target material and the device length.
【０００５】また、マグネトロン磁気回路を揺動させた
場合でも、ターゲット幅と中央部とで通過するエロージ
ョン本数の違いにより、スパッタされる量が異なるた
め、ターゲットが階段状に掘れてしまい、ターゲット使
用効率の低下が問題となる。Even when the magnetron magnetic circuit is oscillated, the amount of sputtered is different due to the difference in the number of erosion passages between the target width and the central portion, so that the target is dug in a staircase and the target is used. The decrease in efficiency becomes a problem.
【０００６】また、近年、ノートパソコンやデスクトッ
プ型ディスプレイの普及とともに、ＬＣＤパネルの低コ
スト化が進み、同時に低コストでかつ生産性の高い製造
装置の要求が大きくなってきている。Further, in recent years, along with the spread of notebook personal computers and desktop displays, the cost of LCD panels has been reduced, and at the same time, the demand for low-cost and highly productive manufacturing equipment has been increasing.
【０００７】[0007]
【発明が解決しようとする課題】そこで、本発明は、上
記の従来技術に伴う問題点を解消し、カソード背面に設
置するマグネトロン磁気回路の数を増やすことにより、
低コストで生産性も高く、酸化物透明導電膜のような薄
膜を形成できる製造方法及び製造装置を提供することを
目的としている。Therefore, the present invention solves the problems associated with the above-mentioned prior art and increases the number of magnetron magnetic circuits installed on the back surface of the cathode.
It is an object of the present invention to provide a manufacturing method and a manufacturing apparatus capable of forming a thin film such as an oxide transparent conductive film at low cost and high productivity.
【０００８】[0008]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明の第１の発明によれば、スパッタ室内に配
置されたカソードに対向した位置を移動する基板に対
し、カソード表面に設置されたターゲット材をスパッタ
することにより連続的に薄膜を形成する装置において、
同電位のカソード背面に２つのマグネトロン磁気回路を
配置し、それぞれ閉じたループを有するマグネトロンプ
ラズマを２つ発生させるように構成したことを特徴とし
ている。In order to achieve the above object, according to the first aspect of the present invention, a cathode surface is provided on a substrate which moves in a position facing the cathode, which is disposed in a sputtering chamber. In the device that continuously forms a thin film by sputtering the installed target material,
It is characterized in that two magnetron magnetic circuits are arranged on the back surface of the cathode of the same potential, and two magnetron plasmas each having a closed loop are generated.
【０００９】好ましくは、カソード背面に配置したマグ
ネトロン磁気回路は、カソード表面に設置されたターゲ
ット表面で４００Ｇ以上となるような磁場強度を有し、
マグネトロンプラズマを発生させた時のスパッタ電圧が
３５０Ｖ以下となるように構成され得る。Preferably, the magnetron magnetic circuit arranged on the back surface of the cathode has a magnetic field strength of 400 G or more on the target surface installed on the cathode surface,
The sputtering voltage when the magnetron plasma is generated may be 350 V or less.
【００１０】また、カソード背面に配置したマグネトロ
ン磁気回路は、カソード背面に対し揺動し、それに応じ
てマグネトロンプラズマを発生させた際のプラズマがタ
ーゲット表面を移動するように構成され得る。Further, the magnetron magnetic circuit arranged on the back surface of the cathode may be constructed so as to oscillate with respect to the back surface of the cathode, and the plasma when the magnetron plasma is generated accordingly moves on the target surface.
【００１１】カソード背面に配置した各マグネトロン磁
気回路の揺動幅は好ましくは各磁気回路によるエロージ
ョンピッチと同じ距離（４０〜１００ｍｍ）に最適化さ
れ得る。これにより、一台のマグネトロン磁気回路を用
いた従来の装置におけるカソードに比べ、効率よくター
ゲットをスパッタできるようになる。The swing width of each magnetron magnetic circuit arranged on the back surface of the cathode can be preferably optimized to the same distance (40 to 100 mm) as the erosion pitch by each magnetic circuit. As a result, the target can be sputtered more efficiently than the cathode in the conventional device using one magnetron magnetic circuit.
【００１２】本発明の一つの実施の形態では、ターゲッ
ト材は、Ｉｎ、Ｓｎ或いはＺｎをベースとし、Ｓｎ、Ａ
ｌ、Ｚｎ、Ｓｂなどの微量の添加物を一種類又は数種類
組み合せたものを基本構成元素とした酸化物ターゲット
から成り、反応性スパッタ法によりＩｎ−Ｏ或いはＳｎ
−Ｏ或いはＺｎ−Ｏを基本構成元素とする酸化物透明導
電膜を形成するようにされ得る。In one embodiment of the present invention, the target material is based on In, Sn or Zn, and Sn, A
It is composed of an oxide target having a basic constituent element of one kind or a combination of several kinds of minute amounts of additives such as 1, Zn, and Sb, and is made of In-O or Sn by the reactive sputtering method.
It is possible to form an oxide transparent conductive film having —O or Zn—O as a basic constituent element.
【００１３】また、本発明の第２の発明によれば、スパ
ッタ室内に配置されたカソードに対向した位置を移動す
る基板に対し、カソード表面に設置されたターゲット材
をスパッタすることにより連続的に薄膜を形成する方法
において、同電位のカソード背面に配置した２つのマグ
ネトロン磁気回路を用いて、カソード表面に設置された
ターゲット表面に４００Ｇ以上の磁場強度をもつそれぞ
れ閉じたループを有するマグネトロンプラズマを発生さ
せ、マグネトロンプラズマを発生させた時のスパッタ電
圧が３５０Ｖ以下となるようにしたことを特徴としてい
る。According to the second aspect of the present invention, the target material placed on the cathode surface is continuously sputtered onto the substrate that moves in a position facing the cathode, which is placed in the sputtering chamber. In the method of forming a thin film, two magnetron magnetic circuits arranged on the back surface of the cathode of the same potential are used to generate a magnetron plasma having a closed loop having a magnetic field strength of 400 G or more on the target surface set on the cathode surface. The sputtering voltage is set to 350 V or less when the magnetron plasma is generated.
【００１４】本発明の第２の発明の一つの実施の形態で
は、ターゲット材として、Ｉｎ、Ｓｎ或いはＺｎをベー
スとし、Ｓｎ、Ａｌ、Ｚｎ、Ｓｂといった微量の添加物
を一種類又は数種類組み合せたものを基本構成元素とし
た酸化物ターゲットを用いて、反応性スパッタ法により
Ｉｎ−Ｏ或いはＳｎ−Ｏ或いはＺｎ−Ｏを基本構成元素
とする酸化物透明導電膜を形成するようにされ得る。In one embodiment of the second aspect of the present invention, the target material is based on In, Sn or Zn, and one or several kinds of trace additives such as Sn, Al, Zn and Sb are combined. It is possible to form an oxide transparent conductive film containing In-O, Sn-O, or Zn-O as a basic constituent element by a reactive sputtering method using an oxide target containing a basic constituent element.
【００１５】好ましくは、各マグネトロン磁気回路をカ
ソード背面に対し揺動させることにより、それに応じて
マグネトロンプラズマを発生させた際のプラズマがター
ゲット表面を移動するようにし、その揺動幅を各磁気回
路によるエロージョンピッチと同じ距離となるようにさ
れ得る。Preferably, each magnetron magnetic circuit is oscillated with respect to the back surface of the cathode so that the plasma at the time of generating the magnetron plasma moves on the target surface, and the oscillating width is set to each magnetic circuit. According to the erosion pitch according to the present invention.
【００１６】[0016]
【発明の実施の形態】以下、添付図面を参照して、本発
明の好ましい実施の形態による透明導電膜の製造方法及
び製造装置について説明する。図１は、本発明の一実施
の形態による透明導電膜の製造装置の全体構成を概略的
に示す。図示装置は仕込み取り出し室１とスパッタ室２
とを備え、これら両室は仕切りバルブ３により仕切られ
ている。仕込み取り出し室１はバルブ４を通じて真空排
気ポンプ５により所望のレベルに真空排気されるように
構成されている。同様にスパッタ室２はバルブ６を通じ
て真空排気ポンプ７により所望のレベルに真空排気され
るように構成されている。また、スパッタ室２には、マ
スフローコントローラーを有するＡｒガス導入系８及び
酸素ガス導入系９により所定量の混合ガスが導入され
る。BEST MODE FOR CARRYING OUT THE INVENTION A method and apparatus for manufacturing a transparent conductive film according to a preferred embodiment of the present invention will be described below with reference to the accompanying drawings. FIG. 1 schematically shows the overall configuration of a transparent conductive film manufacturing apparatus according to an embodiment of the present invention. The illustrated apparatus has a charge / unload chamber 1 and a sputter chamber 2
These chambers are partitioned by a partition valve 3. The charging / discharging chamber 1 is configured to be evacuated to a desired level by a vacuum exhaust pump 5 through a valve 4. Similarly, the sputtering chamber 2 is configured to be evacuated to a desired level by a vacuum exhaust pump 7 through a valve 6. A predetermined amount of mixed gas is introduced into the sputtering chamber 2 by an Ar gas introduction system 8 and a oxygen gas introduction system 9 each having a mass flow controller.
【００１７】スパッタ室２内には、ポリテトラフルオロ
エチレン製の電気絶縁用板１０を介してカソード電極１
１が設置されている。カソード電極１１に表面には、タ
ーゲット材１２が装着されている。カソード電極１１の
下部には、ターゲット材１２上にループ状の磁場を形成
するための２つのマグネトロン磁気回路１３が設置され
ている。また、２つのマグネトロン磁気回路１３はそれ
ぞれ揺動機構１４に装着され、磁気回路揺動用駆動装置
１５により、２つ同時に揺動できるように構成されてい
る。In the sputtering chamber 2, a cathode electrode 1 is provided via an electrically insulating plate 10 made of polytetrafluoroethylene.
1 is installed. A target material 12 is attached to the surface of the cathode electrode 11. Below the cathode electrode 11, two magnetron magnetic circuits 13 for forming a loop magnetic field on the target material 12 are installed. Further, the two magnetron magnetic circuits 13 are respectively mounted on the rocking mechanism 14, and the two magnetic circuit rocking drive devices 15 are configured to rock the two magnetrons simultaneously.
【００１８】カソード電極１１は直流電源１６に接続さ
れ、この直流電源１６と図示していないＲＦ電源より電
力を供給することにより、ターゲット材１２上のループ
状の磁場に沿って高密度プラズマ１７が形成され、この
プラズマ形成領域を中心にターゲット材１２がスパッタ
される。The cathode electrode 11 is connected to a direct current power source 16, and by supplying electric power from the direct current power source 16 and an RF power source (not shown), a high density plasma 17 is generated along a loop magnetic field on the target material 12. The target material 12 is formed and the target material 12 is sputtered around the plasma formation region.
【００１９】また、スパッタ室２内には、基板ホルダー
１８が示されており、この基板ホルダー１８には基板１
９が装着され、そして基板ホルダー１８は仕込み取り出
し室１とスパッタ室２との間を移動するように図示して
いない搬送機構で支持されている。また基板ホルダー１
８はスパッタ室２の右端に設けたシースヒータ２０によ
り加熱できるように構成されている。A substrate holder 18 is shown in the sputtering chamber 2, and the substrate holder 18 has a substrate 1
9 is mounted, and the substrate holder 18 is supported by a transfer mechanism (not shown) so as to move between the loading / unloading chamber 1 and the sputtering chamber 2. Board holder 1
Reference numeral 8 is configured to be heated by a sheath heater 20 provided at the right end of the sputtering chamber 2.
【００２０】このように構成した図示装置の動作におい
て、仕込み取り出し室１はバルブ４を通じて真空排気ポ
ンプ５により真空排気された後、基板１９を装着した基
板ホルダー１８は仕切りバルブ３を通ってスパッタ室２
内に搬送される。スパッタ室２は、バルブ６を通じて真
空排気ポンプ７により高真空に排気された後に、マスフ
ローコントローラーを有するＡｒガス導入系８及び酸素
ガス導入系９より所定量の混合ガスが導入される。一方
カソード電極１１に、直流電源１６及びＲＦ電源より電
力を供給することにより、ターゲット材１２上のループ
状の磁場に沿って高密度プラズマ１７が形成され、この
領域を中心にターゲット材１２がスパッタされる。この
ように高密度プラズマ１７が形成され、ターゲット材１
２がスパッタされている領域にシースヒータ２０によっ
て加熱された基板ホルダー１８に乗った基板１９を搬送
する。それにより、スパッタされたターゲット材は基板
ホルダー１８に装着された基板１９上に酸化膜となり形
成される。この際、基板１９の温度は、シースヒータ２
０により制御される。In the operation of the illustrated apparatus thus constructed, the charge / unload chamber 1 is evacuated by the vacuum exhaust pump 5 through the valve 4, and then the substrate holder 18 on which the substrate 19 is mounted passes through the partition valve 3 and the sputtering chamber. Two
Be transported inside. The sputtering chamber 2 is evacuated to a high vacuum by a vacuum exhaust pump 7 through a valve 6, and then a predetermined amount of mixed gas is introduced from an Ar gas introduction system 8 and an oxygen gas introduction system 9 having a mass flow controller. On the other hand, by supplying electric power to the cathode electrode 11 from the DC power supply 16 and the RF power supply, high-density plasma 17 is formed along the loop-shaped magnetic field on the target material 12, and the target material 12 is sputtered around this area. To be done. Thus, the high-density plasma 17 is formed, and the target material 1
The substrate 19 placed on the substrate holder 18 heated by the sheath heater 20 is transported to the region where 2 is sputtered. Thereby, the sputtered target material is formed as an oxide film on the substrate 19 mounted on the substrate holder 18. At this time, the temperature of the substrate 19 is set to the sheath heater 2
Controlled by 0.
【００２１】図２には、ターゲット材１２の表面におけ
る平行すなわち水平磁場強度とスパッタ電圧との関係を
示す。図２から認められるように、ターゲット材１２の
表面における水平磁場強度が強くなると、放電電圧は低
下できる。そのため本発明においては好ましくはターゲ
ット材１２の表面における水平磁場強度が４００Ｇ以上
になるようにして、スパッタ電圧を３５０Ｖ以下にでき
るようにしている。FIG. 2 shows the relationship between the parallel or horizontal magnetic field strength on the surface of the target material 12 and the sputtering voltage. As can be seen from FIG. 2, as the horizontal magnetic field strength on the surface of the target material 12 becomes stronger, the discharge voltage can be lowered. Therefore, in the present invention, it is preferable that the horizontal magnetic field strength on the surface of the target material 12 is 400 G or more so that the sputtering voltage can be 350 V or less.
【００２２】[0022]
【実施例１】図１の製造装置内のカソード電極１１に組
成がＩｎ２Ｏ３−１０重量％ＳｎＯ ２となるターゲット
材１２を設置し、また基板ホルダー１８にガラス基板１
９を置いて仕込み取り出し室１に設置した。またスパッ
タ室２を３．８×１０−４Ｐａ以下まで真空排気した
後、スパッタ室２内のシースヒータ２０に電力を投入し
た。このとき、基板ホルダー１８上に設置されたガラス
基板１９の表面の温度はターゲット材１２の直前（成膜
直前）で２００℃となるようにシースヒータ２０へ投入
する電力を調整した。続いてスパッタ室２にＡｒガスを
１８０ｓｃｃｍ導入し、圧力が０．６７Ｐａとなるよう
にバルブのコンダクタンスを調整し、さらに酸素ガスを
所定量導入した。続いてカソード電極１１に直流電力
８．６ｋｗを投入し、基板ホルダー１８の搬送速度６０
０ｍｍ／ｍｉｎ．にて成膜を行った。放電電圧は約２５
０Ｖとした。このとき膜形成中のガラス基板１９の温度
が２００℃となるよう基板加熱ヒータで制御した。また
このときターゲット材１２の表面での水平磁場強度がお
よそ９００Ｏｅとなるように磁気回路１３に希土類の永
久磁石を用いた。Example 1 Assembled to the cathode electrode 11 in the manufacturing apparatus of FIG.
Nari is InTwoOThree-10 wt% SnO TwoTarget
The material 12 is installed, and the glass substrate 1 is placed on the substrate holder 18.
9 was placed and installed in the charging / discharging chamber 1. See you
The chamber 2 is 3.8 × 10-4Evacuated to below Pa
After that, power is applied to the sheath heater 20 in the sputtering chamber 2.
It was At this time, the glass installed on the substrate holder 18
The temperature of the surface of the substrate 19 is immediately before the target material 12 (deposition
Immediately before) put into the sheath heater 20 so that the temperature becomes 200 ° C.
The power to be adjusted was adjusted. Subsequently, Ar gas is supplied to the sputtering chamber 2.
Introduce 180 sccm so that pressure becomes 0.67 Pa
Adjust the valve conductance to
A predetermined amount was introduced. Then, direct current power is applied to the cathode electrode 11.
8.6 kW is input and the substrate holder 18 is transported at a speed of 60.
0 mm / min. The film was formed at. Discharge voltage is about 25
It was set to 0V. At this time, the temperature of the glass substrate 19 during film formation
Was controlled by the substrate heater so that the temperature was 200 ° C. Also
At this time, the horizontal magnetic field strength on the surface of the target material 12 is
The magnetic circuit 13 has a long-lasting rare earth element so that it becomes approximately 900 Oe.
A permanent magnet was used.
【００２３】図３に、ダイナミックレートの結果を示
す。従来の磁気回路１台の場合に比べ本発明による磁気
回路２台の場合、ほぼ２倍のダイナミックレートが得ら
れた。FIG. 3 shows the result of the dynamic rate. With the two magnetic circuits according to the present invention, the dynamic rate almost doubled was obtained as compared with the conventional one magnetic circuit.
【００２４】図４には、導入した酸素ガス量と得られた
Ｉｎ−Ｓｎ−Ｏ系透明導電膜（ＩＴＯ膜）の比抵抗の関
係を示す。酸素ガス量が０．５ｓｃｃｍのとき最も低い
比抵抗１８６μΩｃｍが得られた。このとき得られたＩ
ｎ−Ｓｎ−Ｏ系透明導電膜の膜厚はおよそ１５０ｎｍで
あった。FIG. 4 shows the relationship between the amount of introduced oxygen gas and the specific resistance of the obtained In-Sn-O type transparent conductive film (ITO film). The lowest specific resistance of 186 μΩcm was obtained when the oxygen gas amount was 0.5 sccm. I obtained at this time
The film thickness of the n-Sn-O type transparent conductive film was about 150 nm.
【００２５】[0025]
【実施例２】次に、図１の製造装置内のカソード電極１
１に組成がＳｎＯ２−３重量％Ｓｂ ２Ｏ３となるターゲ
ット材１２を設置し、実施例１と同様の条件で、ガラス
基板１９上にＳｎ−Ｓｂ−Ｏ系透明導電膜を形成した。
放電電圧は約３２３Ｖとした。Example 2 Next, the cathode electrode 1 in the manufacturing apparatus of FIG.
The composition is SnOTwo-3 wt% Sb TwoOThreeTarget
The glass material 12 is installed, and glass is used under the same conditions as in Example 1.
A Sn—Sb—O-based transparent conductive film was formed on the substrate 19.
The discharge voltage was about 323V.
【００２６】図５に、導入した酸素ガス量と得られたＳ
ｎ−Ｓｂ−Ｏ系透明導電膜の比抵抗の関係を示す。酸素
ガス量が３０ｓｃｃｍのとき最も低い比抵抗１５００μ
Ωｃｍが得られた。このとき得られたＳｎ−Ｓｂ−Ｏ系
透明導電膜の膜厚はおよそ１７０ｎｍであった。FIG. 5 shows the amount of oxygen gas introduced and the S obtained.
The relationship of the specific resistance of an n-Sb-O type transparent conductive film is shown. Lowest specific resistance 1500μ when oxygen gas amount is 30sccm
Ωcm was obtained. The thickness of the Sn—Sb—O transparent conductive film obtained at this time was about 170 nm.
【００２７】[0027]
【実施例３】次に、図１の製造装置内のカソード電極１
１に組成がＺｎＯ−２重量％Ａｌ２Ｏ３となるターゲッ
ト材を設置し、実施例１と同様の条件で、ガラス基板１
９上にＺｎ−Ａｌ−Ｏ系透明導電膜を形成した。放電電
圧は約３１４Ｖとした。Example 3 Next, the cathode electrode 1 in the manufacturing apparatus of FIG.
A target material having a composition of ZnO-2 wt% Al 2 O 3 was placed on the glass substrate 1 under the same conditions as in Example 1.
A Zn—Al—O-based transparent conductive film was formed on No. 9. The discharge voltage was about 314V.
【００２８】図６に、導入した酸素ガス量と得られたＺ
ｎ−Ａｌ−Ｏ系透明導電膜の比抵抗の関係を示す。酸素
ガス量が０．２ｓｃｃｍのとき最も低い比抵抗２０５０
μΩｃｍが得られた。このとき得られたＺｎ−Ａｌ−Ｏ
系透明導電膜の膜厚はおよそ１００ｎｍであった。FIG. 6 shows the amount of oxygen gas introduced and the obtained Z.
The relationship of the specific resistance of an n-Al-O type transparent conductive film is shown. The lowest specific resistance of 2050 when the oxygen gas amount is 0.2 sccm
μΩcm was obtained. Zn-Al-O obtained at this time
The film thickness of the transparent conductive film was about 100 nm.
【００２９】[0029]
【実施例４】次に、磁気回路１台、及び磁気回路２台で
磁気回路の位置（ピッチ）と揺動距離をそれぞれ変化さ
せてスパッタさせた時のターゲットの掘れを確認した。
条件としては、スパッタ室２にＡｒガスを１８０ｓｃｃ
ｍ導入し、圧力が０．６７Ｐａとなるようにバルブのコ
ンダクタンスを調整した。続いてカソード電極１１に直
流電力８．６ｋｗを投入し、約２０００ｋｗｈｒ連続放
電させ、ターゲットの磁気回路揺動方向の掘れ量を測定
した。磁気回路幅は９０ｍｍでエロージョンピッチが６
０ｍｍとなるようなものを用いた。磁気回路の揺動速度
は３０００ｍｍ／ｍｉｎ．一定の等速反転運動させた。
ターゲット幅は３００ｍｍのものを用いた。[Embodiment 4] Next, the digging of the target was confirmed when the position (pitch) and the swing distance of the magnetic circuit were changed with one magnetic circuit and two magnetic circuits, respectively.
The conditions are as follows: Ar gas 180 spc in the sputtering chamber 2
The valve conductance was adjusted so that the pressure became 0.67 Pa. Subsequently, DC power of 8.6 kw was applied to the cathode electrode 11 to continuously discharge about 2000 kwhr, and the amount of digging in the swinging direction of the magnetic circuit of the target was measured. Magnetic circuit width is 90 mm and erosion pitch is 6
A material having a thickness of 0 mm was used. The swing speed of the magnetic circuit is 3000 mm / min. A constant velocity reversal motion was performed.
A target width of 300 mm was used.
【００３０】図７のａ）、ｂ）にターゲットの磁気回路
揺動方向の掘れ量の結果を示す。ａ）は従来の磁気回路
１台で揺動幅１８０ｍｍの場合、ｂ）は磁気回路２台で
磁気回路ピッチ１２０ｍｍ、揺動幅６０ｍｍの場合であ
る。ａ）の場合、磁気回路を揺動させたときにターゲッ
ト端部（ａ１部）ではエロージョンが１本通過するのに
対してターゲット中央部（ａ２部）ではエロージョンが
２本通過するため、図のように階段状に掘れてしまう。
これに対して本発明のｂ）の場合、磁気回路ピッチ（エ
ロージョンピッチ）が均等であり、そのピッチと磁気回
路揺動幅とがちょうど一致するため、最も効率よくター
ゲットをスパッタすることができた。この時のターゲッ
ト使用効率はａ）で約３５〜４０％であるのに対しｂ）
では約４５〜５０％の値が得られた。7A and 7B show the results of the digging amount of the target in the swinging direction of the magnetic circuit. a) is a case where a conventional magnetic circuit has a swing width of 180 mm, and b) is a case where two magnetic circuits have a magnetic circuit pitch of 120 mm and a swing width of 60 mm. In the case of a), when the magnetic circuit is swung, one erosion passes at the target end (a1 part), whereas two erosion passes at the target central part (a2 part). It will be dug like a staircase.
On the other hand, in the case of b) of the present invention, the magnetic circuit pitch (erosion pitch) is uniform and the pitch and the magnetic circuit swing width are exactly the same, so that the target could be sputtered most efficiently. . The target usage efficiency at this time is about 35-40% in a), while b).
A value of about 45-50% was obtained.
【００３１】以上、実施例では同電位のカソード背面に
２つのマグネトロン磁気回路を配置したカソードを用い
ても、従来のマグネトロン磁気回路１つのカソードを用
いた時とほぼ同等の低抵抗透明導電膜が得られている。
また、本発明の透明導電膜作製法では、現状磁気回路１
つのカソードと比較すると成膜レートが２倍になりター
ゲット使用効率も改善されるため、カソード台数、電源
台数、ポンプ台数を大幅に削減できるため、装置を大幅
に低価格化できることが可能となる。また、それにとも
ない装置の長さも短くすることが可能となる。As described above, in the embodiment, even if the cathode in which two magnetron magnetic circuits are arranged on the back surface of the cathode of the same potential is used, the low resistance transparent conductive film which is almost equivalent to that when one cathode of the conventional magnetron magnetic circuit is used can be obtained. Has been obtained.
In addition, in the transparent conductive film manufacturing method of the present invention, the present magnetic circuit 1 is used.
Since the film formation rate is doubled and the target usage efficiency is improved as compared with one cathode, the number of cathodes, the number of power sources, and the number of pumps can be significantly reduced, and the cost of the device can be significantly reduced. In addition, the length of the device can be shortened accordingly.
【００３２】[0032]
【発明の効果】以上説明したように、本発明によれば、
スパッタ室内に配置されたカソードに対向した位置を移
動する基板に対し、カソード表面に設置されたターゲッ
ト材をスパッタすることにより連続的に薄膜を形成する
装置において、同電位のカソード背面に２つのマグネト
ロン磁気回路を配置し、それぞれ閉じたループを有する
マグネトロンプラズマを２つ発生させるように構成した
ことにより、従来の磁気回路１つのカソードと比較して
成膜レートが２倍になり、ターゲット使用効率も改善さ
れる。その結果、カソード台数、電源台数、ポンプ台数
を大幅に削減でき、それに伴い装置の長さも短くするこ
とができ、装置を大幅に低価格化できることが可能とな
る。As described above, according to the present invention,
In a device that continuously forms a thin film by sputtering a target material placed on the cathode surface onto a substrate that moves in a position facing the cathode placed in a sputtering chamber, two magnetrons are provided on the back surface of the cathode at the same potential. By arranging a magnetic circuit and generating two magnetron plasmas each having a closed loop, the film formation rate is doubled compared with the conventional one cathode of the magnetic circuit, and the target use efficiency is also increased. Be improved. As a result, the number of cathodes, the number of power sources, and the number of pumps can be significantly reduced, and the length of the device can be shortened accordingly, and the cost of the device can be significantly reduced.
【００３３】また、本発明の製造方法においては、同電
位のカソード背面に配置した２つのマグネトロン磁気回
路を用いて、カソード表面に設置されたターゲット表面
に４００Ｇ以上の磁場強度をもつそれぞれ閉じたループ
を有するマグネトロンプラズマを発生させ、マグネトロ
ンプラズマを発生させた時のスパッタ電圧が３５０Ｖ以
下となるように構成したことにより、従来の方法と比較
して成膜レートを２倍にすることができ，その結果、タ
ーゲット使用効率を大幅に改善でき、成膜コストを大幅
に低減できるようになる。Further, in the manufacturing method of the present invention, two magnetron magnetic circuits arranged on the back surface of the cathode of the same potential are used, and a closed loop having a magnetic field strength of 400 G or more is provided on the target surface provided on the cathode surface. Since the magnetron plasma having the above is generated and the sputtering voltage when the magnetron plasma is generated is 350 V or less, the film forming rate can be doubled as compared with the conventional method. As a result, the target use efficiency can be significantly improved, and the film formation cost can be significantly reduced.
【図１】本発明の一実施の形態による透明導電膜の製造
装置の概略線図。FIG. 1 is a schematic diagram of a transparent conductive film manufacturing apparatus according to an embodiment of the present invention.
【図２】ターゲット材の表面における平行すなわち水平
磁場強度とスパッタ電圧との関係を示すグラフ。FIG. 2 is a graph showing the relationship between the parallel or horizontal magnetic field strength and the sputtering voltage on the surface of the target material.
【図３】本発明の実施例による透明導電膜の製造方法に
従って、Ｉｎ−Ｓｎ−Ｏ系透明導電膜（ＩＴＯ膜）を成
膜した際の、投入Ｐｏｗｅｒと成膜レートの関係を示す
グラフ。FIG. 3 is a graph showing the relationship between the input power and the film formation rate when an In—Sn—O-based transparent conductive film (ITO film) is formed according to the method for manufacturing a transparent conductive film according to the example of the present invention.
【図４】本発明の実施例による透明導電膜の製造方法に
従って、Ｉｎ−Ｓｎ−Ｏ系透明導電膜（ＩＴＯ膜）を成
膜した際の、導入酸素ガス量と膜の比抵抗の関係を示す
グラフ。FIG. 4 shows the relationship between the amount of introduced oxygen gas and the specific resistance of a film when an In—Sn—O-based transparent conductive film (ITO film) is formed according to the method for producing a transparent conductive film according to an example of the present invention. The graph that shows.
【図５】本発明の別の実施例による透明導電膜の製造方
法に従って、Ｓｎ−Ｓｂ−Ｏ系透明導電膜を成膜した際
の、導入酸素ガス量と膜の比抵抗の関係を示すグラフ。FIG. 5 is a graph showing the relationship between the amount of introduced oxygen gas and the specific resistance of the film when the Sn—Sb—O-based transparent conductive film is formed according to the method for manufacturing a transparent conductive film according to another embodiment of the present invention. .
【図６】本発明のさらに別の実施例による透明導電膜の
製造方法に従って、Ｚｎ−Ａｌ−Ｏ系透明導電膜を成膜
した際の、導入酸素ガス量と膜の比抵抗の関係を示すグ
ラフ。FIG. 6 shows the relationship between the amount of introduced oxygen gas and the specific resistance of a film when a Zn—Al—O-based transparent conductive film is formed according to a method for manufacturing a transparent conductive film according to still another example of the present invention. Graph.
【図７】本発明の実施例による透明導電膜の製造方法に
従って、長時間放電を行った際の、ａ）磁気回路１台の
場合、ｂ）磁気回路２台の場合におけるターゲットの磁
気回路揺動方向の掘れ方を示す図。FIG. 7 shows a magnetic circuit fluctuation of a target in the case of (a) one magnetic circuit and (b) two magnetic circuits when discharging for a long time according to the method for manufacturing a transparent conductive film according to the embodiment of the present invention. The figure which shows how to dig in a moving direction.
１ ：仕込み取り出し室 ２ ：スパッタ室 ３ ：仕切りバルブ ４ ：バルブ ５ ：真空排気ポンプ ６ ：バルブ ７ ：真空排気ポンプ ８ ：Ａｒガス導入系 ９ ：酸素ガス導入系 １０：電気絶縁用板 １１：カソード電極 １２：ターゲット材 １３：磁気回路 １４：揺動機構 １５：磁気回路揺動用駆動装置 １６：直流電源 １７：マグネトロンプラズマ １８：基板ホルダー １９：基板 ２０：シースヒータ 1: Preparation room 2: Sputtering room 3: Partition valve 4: Valve 5: Vacuum pump 6: Valve 7: Vacuum pump 8: Ar gas introduction system 9: Oxygen gas introduction system 10: Plate for electrical insulation 11: cathode electrode 12: Target material 13: Magnetic circuit 14: Swing mechanism 15: Drive device for swinging magnetic circuit 16: DC power supply 17: Magnetron plasma 18: Substrate holder 19: Substrate 20: Sheath heater
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小松 孝 千葉県山武郡山武町横田523 株式会社ア ルバック千葉超材料研究所内 (72)発明者 中村 肇 千葉県山武郡山武町横田523 株式会社ア ルバック千葉超材料研究所内 (72)発明者 清田 淳也 千葉県山武郡山武町横田523 株式会社ア ルバック千葉超材料研究所内 (72)発明者 杉浦 功 千葉県山武郡山武町横田523 株式会社ア ルバック千葉超材料研究所内 Ｆターム(参考） 4K029 BA45 BA47 BA49 BC09 BD00 CA06 DC40 DC43 EA09 KA01 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Takashi Komatsu 523 Yokota, Sanmu-cho, Sanmu-gun, Chiba Prefecture Lubac Chiba Institute for Materials Research (72) Inventor Hajime Nakamura 523 Yokota, Sanmu-cho, Sanmu-gun, Chiba Prefecture Lubac Chiba Institute for Materials Research (72) Inventor Junya Kiyota 523 Yokota, Sanmu-cho, Sanmu-gun, Chiba Prefecture Lubac Chiba Institute for Materials Research (72) Inventor Isao Sugiura 523 Yokota, Sanmu-cho, Sanmu-gun, Chiba Prefecture Lubac Chiba Institute for Materials Research F-term (reference) 4K029 BA45 BA47 BA49 BC09 BD00 CA06 DC40 DC43 EA09 KA01
Claims (8)
した位置を移動する基板に対し、カソード表面に設置さ
れたターゲット材をスパッタすることにより連続的に薄
膜を形成する装置において、同電位のカソード背面に２
つのマグネトロン磁気回路を配置し、それぞれ閉じたル
ープを有するマグネトロンプラズマを２つ発生させるよ
うに構成したことを特徴とする薄膜の製造装置。1. A cathode having the same potential in an apparatus for continuously forming a thin film by sputtering a target material placed on the cathode surface onto a substrate moving in a position facing the cathode placed in a sputtering chamber. 2 on the back
An apparatus for producing a thin film, comprising two magnetron magnetic circuits arranged to generate two magnetron plasmas each having a closed loop.
回路は、カソード表面に設置されたターゲット表面で４
００Ｇ以上となるような磁場強度を有し、マグネトロン
プラズマを発生させた時のスパッタ電圧が３５０Ｖ以下
となるように構成されていることを特徴とする請求項１
に記載の薄膜の製造装置。2. The magnetron magnetic circuit arranged on the back surface of the cathode has a target surface arranged on the cathode surface.
The magnetic field strength is set to 00 G or more, and the sputtering voltage when magnetron plasma is generated is set to 350 V or less.
An apparatus for producing a thin film as described in.
回路は、カソード背面に対し揺動し、それに応じてマグ
ネトロンプラズマを発生させた際のプラズマがターゲッ
ト表面を移動するように構成されていることを特徴とす
る請求項１に記載の薄膜の製造装置。3. The magnetron magnetic circuit arranged on the back surface of the cathode is configured so as to oscillate with respect to the back surface of the cathode, and the plasma when the magnetron plasma is generated accordingly moves on the target surface. The thin film manufacturing apparatus according to claim 1.
気回路の揺動幅が各磁気回路によるエロージョンピッチ
と同じ距離に最適化されることを特徴とする請求項３に
記載の薄膜の製造装置。4. The thin film manufacturing apparatus according to claim 3, wherein the swing width of each magnetron magnetic circuit arranged on the back surface of the cathode is optimized to the same distance as the erosion pitch by each magnetic circuit.
ベースとし、Ｓｎ、Ａｌ、Ｚｎ、Ｓｂなどの微量の添加
物を一種類又は数種類組み合せたものを基本構成元素と
した酸化物ターゲットから成り、反応性スパッタ法によ
りＩｎ−Ｏ或いはＳｎ−Ｏ或いはＺｎ−Ｏを基本構成元
素とする酸化物透明導電膜を形成するようにしたことを
特徴とする請求項１に記載の薄膜の製造装置。5. A target material comprising an oxide target based on In, Sn or Zn, and having as a basic constituent element one or a combination of trace amounts of additives such as Sn, Al, Zn and Sb. 2. The thin film manufacturing apparatus according to claim 1, wherein an oxide transparent conductive film containing In-O, Sn-O, or Zn-O as a basic constituent element is formed by a reactive sputtering method.
した位置を移動する基板に対し、カソード表面に設置さ
れたターゲット材をスパッタすることにより連続的に薄
膜を形成する方法において、同電位のカソード背面に配
置した２つのマグネトロン磁気回路を用いて、カソード
表面に設置されたターゲット表面に４００Ｇ以上の磁場
強度をもつそれぞれ閉じたループを有するマグネトロン
プラズマを発生させ、マグネトロンプラズマを発生させ
た時のスパッタ電圧が３５０Ｖ以下となるようにしたこ
とを特徴とする薄膜の製造方法。6. A method of continuously forming a thin film by sputtering a target material placed on the surface of a cathode to a substrate which moves in a position facing the cathode placed in a sputtering chamber, and the cathode having the same potential. Using two magnetron magnetic circuits arranged on the back surface, a magnetron plasma having a magnetic field strength of 400 G or more and a closed loop is generated on the target surface placed on the cathode surface, and sputtering is performed when the magnetron plasma is generated. A method for producing a thin film, characterized in that the voltage is set to 350 V or less.
ｎをベースとし、Ｓｎ、Ａｌ、Ｚｎ、Ｓｂといった微量
の添加物を一種類又は数種類組み合せたものを基本構成
元素とした酸化物ターゲットを用いて、反応性スパッタ
法によりＩｎ−Ｏ或いはＳｎ−Ｏ或いはＺｎ−Ｏを基本
構成元素とする酸化物透明導電膜を形成することを特徴
とする請求項６に記載の薄膜の製造方法。7. A target material of In, Sn or Z
In-O or Sn-O by reactive sputtering using an oxide target based on n and having a basic constituent element of one kind or a combination of several kinds of additives such as Sn, Al, Zn and Sb. Alternatively, the method for producing a thin film according to claim 6, wherein an oxide transparent conductive film having Zn-O as a basic constituent element is formed.
対し揺動させることにより、それに応じてマグネトロン
プラズマを発生させた際のプラズマがターゲット表面を
移動するようにし、その揺動幅を各磁気回路によるエロ
ージョンピッチと同じ距離となるようにしたことを特徴
とする請求項６に記載の薄膜の製造方法。8. By swinging each magnetron magnetic circuit with respect to the back surface of the cathode, the plasma when the magnetron plasma is generated is moved correspondingly to the target surface, and the swing width is set by each magnetic circuit. The method for producing a thin film according to claim 6, wherein the distance is the same as the erosion pitch.
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| JP2007039712A (en) * | 2005-08-01 | 2007-02-15 | Ulvac Japan Ltd | Sputtering apparatus, film forming method |
| WO2009028372A1 (en) * | 2007-08-24 | 2009-03-05 | Ulvac, Inc. | Method for forming transparent conductive film |
| WO2009038091A1 (en) * | 2007-09-19 | 2009-03-26 | Ulvac, Inc. | Solar battery manufacturing method |
| WO2009038094A1 (en) * | 2007-09-19 | 2009-03-26 | Ulvac, Inc. | Solar battery manufacturing method |
| JP2009144234A (en) * | 2007-12-18 | 2009-07-02 | Ulvac Japan Ltd | Film forming apparatus and film forming method |
| WO2009093580A1 (en) * | 2008-01-24 | 2009-07-30 | Ulvac, Inc. | Process for producing liquid crystal display device |
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| KR100977622B1 (en) * | 2008-06-11 | 2010-08-23 | (주)이루자 | Metal catalyst doping equipment and doping method and manufacturing method of flat panel display device using the same |
| EP2352173A4 (en) * | 2008-10-17 | 2013-10-09 | Ulvac Inc | METHOD FOR MANUFACTURING SOLAR CELL |
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