TWI894496B - Sputtering device - Google Patents

Abstract

The sputtering apparatus of the present invention includes a cathode unit that emits sputtering particles toward a processed surface of a film-forming substrate. The cathode unit comprises a target, a magnet unit, a magnetic scanning unit, and an auxiliary magnet. The auxiliary magnet is arranged along a magnet at a first swing end, tilting the magnetic field lines formed by the magnet at the first swing end toward a second swing end.

Description

Sputtering equipment

The present invention relates to a sputtering device, and more particularly to a preferred technique for film formation with a magnetron cathode.

Regarding film forming apparatuses having magnetron cathodes, a method is known in which a magnet is moved relative to a target in order to improve target utilization efficiency.

Furthermore, as disclosed in Patent Document 1, it is also known that in order to improve the uniformity of a film formed by a film forming method, in addition to moving the magnet, the cathode and the target are also swung relative to the film-forming substrate.

Furthermore, as disclosed in Patent Document 2, it is known that a magnet and a cathode are swung for the purpose of preventing the generated particles from adversely affecting the film formation in the sputtering treatment chamber.

Furthermore, the present applicants have disclosed a technique such as Patent Document 3 as a technique for oscillating a film-forming substrate relative to a magnet and a cathode. [Prior Art Document] [Patent Document]

[Patent Document 1] Japanese Patent Publication No. 2009-41115 [Patent Document 2] Japanese Patent Publication No. 2012-158835 [Patent Document 3] Japanese Patent Publication No. 6579726

[Identify the problem you want to solve]

However, even with the aforementioned technique of scanning (oscillating) the magnet relative to the target, non-eroded areas can occur. These non-eroded areas, near the edge of the film-forming area near the magnet's oscillating region, can sometimes cause particle generation. There is a demand to address the generation of these non-eroded areas. In particular, it is known that a blurred boundary between the non-eroded and eroded areas is more likely to cause problematic particles than the generation of non-eroded areas, such as re-sputtering of re-deposited films (re-attached films, sputtered films attached to the target). Furthermore, when a non-erosion area is generated during the scanning (oscillation) of a magnet relative to a target, the film thickness decreases near the periphery of the film-forming area near the magnet's oscillation zone, resulting in uneven film thickness distribution and film quality distribution. This problem remains unresolved. Furthermore, as substrates become larger, the demand for improvements to these problems is increasing.

The present invention was developed in light of the above-mentioned circumstances and achieves the following objectives: 1. Suppressing the formation of a fuzzy region around the non-erosion-generating area, thereby reducing the causes of particle generation. 2. Stabilizing the generated plasma distribution, thereby improving the uniformity of the film thickness distribution and the distribution of film thickness characteristics regardless of the swing position of the magnet. [Technical Solution]

The inventors of this case conducted intensive research and successfully suppressed the generation of particles in non-etched areas, and successfully suppressed the uneven distribution of film thickness and film properties.

During sputtering, applied electric force generates a magnetic field (magnetic field, magnetic lines of force) from a magnet. At this time, plasma or electrons that contribute to sputtering move along the magnetic lines of force generated by the magnet. Among the magnetic lines of force generated by the magnet, those that contribute to plasma generation arc from the north pole of the magnet, one of the two poles arranged parallel to the target, toward the target, and then reach the south pole. At this time, the magnetic lines of force generated by the magnet penetrate the target from the north pole in the thickness direction from the back side to the front side, forming an arc in the plasma generation space, and then penetrate the target from the front side to the back side in the thickness direction, returning to the south pole.

A grounded portion, such as an anode, is positioned around the edge of the target. In this state, when a magnet is scanned (oscillated) near the oscillating end, it is positioned close to the anode. This phenomenon sometimes occurs near the oscillating end of the magnet: magnetic lines of force generated from the north pole flow toward the anode near the magnetic lines of force, rather than returning to the south pole. This causes electrons to follow (move) along the magnetic lines of force, not return to the plasma formation space, and instead flow to the anode without contributing to plasma formation. This is called electron absorption.

When electrons are absorbed by the anode, the electron density on the front side of the target, i.e., in the plasma generation space, decreases. This can sometimes cause the density of the generated plasma to decrease, or even eliminate plasma generation. This phenomenon is called plasma absorption. When this occurs, the target is not sputtered by the plasma, resulting in non-eroded areas, which can expand.

When electrons are absorbed by the anode, the plasma near the anode switches on and off due to the oscillation of the magnet and other factors. This causes the plasma to switch on and off, causing sputtering. This increases the possibility of particles being generated by sputtering of the re-deposited film.

Specifically, the formation of non-eroded areas can cause particles to form near the periphery of the film-forming area near the magnet's oscillation zone. In this case, the boundary between the non-eroded and eroded areas becomes unclear, forming an erosion-non-erosion boundary region.

Thus, it is known that when the boundary between the non-etched area and the etched area is blurred, it is more likely to cause the generation of problematic particles, such as re-sputtering of the re-deposited film, than when the non-etched area is generated.

As described above, when electrons are absorbed by the anode, the magnetic field lines from the magnet are directed toward the anode, that is, inclined toward the outside of the target contour relative to the thickness direction of the target.

Therefore, the inventors of this application discovered that to solve this problem, the amount of absorbed electrons can be reduced by directing the magnetic flux generated by the magnet at the oscillating end of the magnet away from the anode. Specifically, the inventors discovered that effectively reducing the non-erosion area is to tilt the magnetic flux generated by the magnet at one oscillating end of the magnet further toward the other end of the oscillating end relative to the thickness direction of the target, that is, to tilt the magnetic flux generated by the magnet further toward the inside of the target contour relative to the thickness direction of the target.

Furthermore, in the above explanation, although the magnetic lines of force are usually expressed as running from the north pole to the south pole, even if the polarity is opposite, it does not hinder the understanding of the phenomenon.

Furthermore, when non-erosion areas are created, plasma generation is suppressed. Consequently, the applied power is not consumed by plasma generation, resulting in surplus power. This surplus power is redistributed to areas different from the original non-erosion areas, or absorbed by overall voltage (power) fluctuations. Consequently, just as voltage fluctuations do, the plasma generation conditions fluctuate, leading to increased unevenness in film thickness distribution and film quality characteristics.

That is, when electrons are absorbed by the anode, non-eroded areas are generated, which leads to uneven film thickness distribution and amplified uneven distribution of film properties.

Furthermore, when non-eroded areas are generated, partial changes in plasma generation conditions due to voltage fluctuations, etc., can sometimes result in non-eroded areas that differ from the original non-eroded areas. In this case, particle generation, film thickness distribution, and film quality distribution become more uneven.

Therefore, the inventors of this application discovered that, to solve this problem, the amount of absorbed electrons can be reduced by directing the magnetic flux generated by the magnet at one of its oscillating ends away from the anode. Specifically, the inventors discovered that effectively suppressing uneven film thickness distribution and film quality distribution is to tilt the magnetic flux generated by the magnet at one of its oscillating ends further toward the other end of the magnet relative to the target thickness direction, that is, to tilt it further inward of the target contour relative to the target thickness direction.

In light of these circumstances, the inventors of this invention have completed the present invention as follows. One aspect of the present invention includes a cathode unit for emitting sputtering particles toward a processing surface of a film-forming substrate. The cathode unit includes a target having an erosion region formed thereon, a magnet unit, a magnet scanning unit, and an auxiliary magnet. The magnet unit includes a plurality of magnets disposed on a side of the target opposite to the film-forming substrate, such that the erosion region is formed on the target. The magnet scanning unit is capable of reciprocating the magnet unit and the film-forming substrate relative to each other between a first swing end and a second swing end along a swing direction of the film-forming substrate. An auxiliary magnet is arranged along the magnets located at the first swing end among the plurality of magnets, tilting the magnetic field lines formed by the magnets located at the first swing end toward the second swing end. The plurality of magnets extend along the processed surface of the film formation substrate and in a direction intersecting the swing direction. In one aspect of the sputtering apparatus of the present invention, the auxiliary magnet may be arranged along the magnets located at the first swing end on a side opposite to the second swing end relative to the first swing end, and the auxiliary magnet may be swung integrally with the magnets. In the sputtering apparatus according to one aspect of the present invention, the auxiliary magnet may have the same polarity as the magnet located at the first swing end. In the sputtering apparatus according to one aspect of the present invention, the magnetic strength of the auxiliary magnet may be equal to or less than the magnetic strength of the magnet located at the first swing end. In the sputtering apparatus according to one aspect of the present invention, the auxiliary magnet may have a protrusion extending along the magnet toward the target. In the sputtering apparatus according to one aspect of the present invention, the auxiliary magnet may be disposed on the opposite side of the substrate to be processed relative to the target and mounted on a magnetic yoke forming a magnetic circuit. Regarding one aspect of the sputtering device of the present invention, the cathode unit may include: a flat yoke having a central region containing a magnetic body on its surface; an auxiliary yoke adjacent to the yoke; a central magnetic portion arranged in a straight line in the central region of the yoke; a peripheral magnetic portion arranged along the periphery of the central magnetic portion so as to surround the central magnetic portion; and a parallel region in which the central magnetic portion is disposed. The sputtering device includes a magnetic circuit disposed on the surface of the magnetic yoke and a backing plate arranged to overlap the magnetic circuit. Each of the plurality of magnets constituting the magnetic unit is disposed on the magnetic yoke, and the auxiliary magnet is disposed parallel to the peripheral magnetic portion. The auxiliary magnet is secured to the magnetic yoke via the auxiliary yoke, and the auxiliary yoke comprises a magnetic material or a dielectric material. In one aspect of the sputtering device of the present invention, the auxiliary yoke and the auxiliary magnet may be removable from the magnetic yoke. In one aspect of the sputtering device of the present invention, the magnet located at the first oscillating end among the plurality of magnets may include a plurality of magnetic field generating regions divided in the intersecting direction, each of the magnetic field generating regions including a divided magnetic yoke, a divided peripheral magnet portion, a divided central magnet portion, and a divided auxiliary magnet. The position of each of the magnetic field generating regions is adjustable in the intersecting direction and in the thickness direction of the magnetic yoke, and the magnet having the plurality of magnetic field generating regions with adjusted positions can be oscillated by the magnet scanning unit.

One form of the sputtering device of the present invention includes a cathode unit for emitting sputtering particles toward a processed surface of a film-forming substrate. The cathode unit includes a target having an erosion area, a magnet unit, a magnet scanning unit, and an auxiliary magnet. The magnet unit includes a plurality of magnets, which are arranged on the opposite side of the film-forming substrate relative to the target, so that the erosion area is formed on the target. The magnet scanning unit enables the magnet unit and the film-forming substrate to reciprocate relative to each other between a first swing end and a second swing end along a swing direction of the processed surface of the film-forming substrate. The auxiliary magnet tilts the magnetic field lines formed by the magnets located at the first oscillating end of the plurality of magnets toward the second oscillating end. The plurality of magnets extend along the processed surface of the film-forming substrate and in a direction intersecting the oscillating direction. In this manner, the magnetic field generated by the auxiliary magnet tilts the magnetic field lines formed by the magnets located at the first oscillating end of the plurality of magnets. This reduces the amount of electrons absorbed by the anode. This suppresses plasma absorption, thereby preventing a decrease in plasma density. This effectively reduces the eroded-non-eroded interface, thereby reducing the generation of particles caused by this interface. At the same time, it suppresses fluctuations in the supply voltage and, consequently, in the plasma density caused by the magnet's oscillation position, stabilizes the plasma generation state and effectively minimizes variations in film thickness and film quality distribution.

In one aspect of the sputtering plating apparatus of the present invention, the auxiliary magnet may be positioned along the magnet located at the first swing end, on a side of the magnet opposite to the second swing end relative to the first swing end, and the auxiliary magnet may be swung integrally with the magnet. This arrangement suppresses the reduction of magnetic flux from the magnet regardless of the swing position of the magnet. This stabilizes plasma generation and prevents the formation of erosion-non-erosion boundary regions. This also suppresses particle generation and the generation of uneven film thickness and film quality distribution.

In one aspect of the sputtering apparatus of the present invention, the auxiliary magnet may have the same polarity as the magnet located at the first oscillating end. This allows the magnetic flux lines from the plasma-generating magnet to be repelled by the magnetic flux lines from the auxiliary magnet. This allows the magnet to be tilted in a specific direction while maintaining a desired magnetic intensity (magnetic flux density). This prevents a drop in plasma density and suppresses the formation of an eroded-non-eroded boundary region. This also suppresses particle generation and minimizes uneven film thickness and film quality distribution.

In one aspect of the sputtering apparatus of the present invention, the magnetic strength of the auxiliary magnet may be equal to or less than the magnetic strength of the magnet located at the first oscillating end. This prevents the magnetic flux lines from the plasma-generating magnet from being excessively tilted by the magnetic flux lines from the auxiliary magnet, but rather from being tilted at a specific angle. Consequently, unnecessary plasma density drops and non-erosion boundary regions are prevented, and the formation of erosion-non-erosion boundary regions can be suppressed. This can also suppress particle generation, and prevent uneven film thickness distribution and film quality distribution.

In one aspect of the sputtering apparatus of the present invention, the auxiliary magnet may include a protrusion extending from the magnet toward the target. This allows the auxiliary magnet's magnetic flux lines to be concentrated from the protrusion. This effectively tilts the magnetic flux lines from the plasma-generating magnet without dispersing them. Consequently, the auxiliary magnet can be made smaller and lighter, and the magnet and auxiliary magnet can be swung without adding unnecessary burden to the magnetic scanning unit. This prevents a decrease in plasma density and the creation of an unnecessary non-erosion boundary region, thereby suppressing the formation of an erosion-non-erosion boundary region. It can suppress particle generation and prevent uneven film thickness and film quality distribution.

In one aspect of the sputtering apparatus of the present invention, the auxiliary magnet may be positioned on the opposite side of the substrate being processed relative to the target and fixed to a magnetic yoke that forms a magnetic path. This arrangement allows the auxiliary magnet to be integrally swung with the magnet. Furthermore, the auxiliary magnet can maintain a constant slope of the magnetic lines of force relative to the magnet at the first swaying end, regardless of the swaying position. Furthermore, the magnetic force of the auxiliary magnet can be incorporated into the magnetic path of the magnet formed together with the yoke, thereby more efficiently generating plasma.

Regarding one aspect of the sputtering device of the present invention, the cathode unit may include: a flat yoke having a central region containing a magnetic body on its surface; an auxiliary yoke adjacent to the yoke; a central magnetic portion arranged in a straight line in the central region of the yoke; a peripheral magnetic portion arranged along the periphery of the central magnetic portion so as to surround the central magnetic portion; and a parallel region in which the central magnetic portion is disposed. The peripheral magnet portion is parallel to the peripheral magnet portion; a magnetic circuit is provided on the surface of the magnetic yoke; and a backing plate is arranged to overlap the magnetic circuit. Each of the plurality of magnets constituting the magnetic unit is arranged on the magnetic yoke. The auxiliary magnet is arranged parallel to the peripheral magnet portion and is secured to the magnetic yoke via the auxiliary magnetic yoke. The auxiliary magnetic yoke comprises a magnetic material or a dielectric material. In this manner, the magnetic pole surface of the peripheral magnet portion is arranged along a surface parallel to the film formation substrate. The peripheral magnets located at the first oscillating end in the oscillating direction tilt the magnetic field lines that are farther from the second oscillating end than perpendicular to the magnetic pole plane, at least toward the second oscillating end. This reduces the amount of electrons absorbed by the anode even when the magnet is in the oscillating position closest to the anode. This prevents the plasma density from decreasing around the oscillating end, preventing the generation of excess non-erosion boundary regions and thus suppressing the formation of erosion-non-erosion boundary regions. This suppresses particle generation and minimizes uneven film thickness and film quality distribution.

In one aspect of the sputtering apparatus of the present invention, the auxiliary yoke and the auxiliary magnet may be removable from the yoke. This allows for the formation of magnetic flux lines corresponding to the processing conditions when the sputtering apparatus is subjected to different processing conditions. Therefore, the inclination angle of the magnetic flux lines from the magnet at the oscillating end must be varied. In this case, the configuration can be easily changed by replacing the auxiliary magnet.

In one aspect of the sputtering apparatus of the present invention, the magnet located at the first oscillating end of the plurality of magnets may have a plurality of magnetic field generating regions divided in the cross direction. Each of the magnetic field generating regions may include a divided magnetic yoke, a divided peripheral magnet portion, a divided central magnet portion, and a divided auxiliary magnet. The position of each magnetic field generating region may be adjusted in the cross direction and in the thickness direction of the yoke, and the magnet having the plurality of magnetic field generating regions with adjusted positions may be oscillated by the magnet scanning unit. To control the film formation state across the entire film formation area, for example, the magnetic flux density conditions associated with plasma generation may be adjusted in the cross direction and in the thickness direction of the yoke. With this configuration, the plurality of magnetic field generating regions are divided, and the positions of the cross direction and the thickness direction of the magnetic yokes of each of the plurality of magnetic field generating regions can be adjusted. Therefore, the magnetic flux density conditions in each of the plurality of magnetic field generating regions can be adjusted. By adjusting each of the plurality of magnetic field generating regions in the cross direction and the thickness direction of the magnetic yokes, the magnetic flux lines of the peripheral magnetic poles in the magnet located at the first oscillating end can be tilted in a desired direction in each of the plurality of magnetic field generating regions using the divided auxiliary magnets. The tilted magnetic flux lines in the desired direction can be maintained in each of the plurality of magnetic field generating regions. [Effects of the Invention]

According to one aspect of the sputtering apparatus of the present invention, a desired magnetic flux density, and thus a stable plasma density, can be maintained. Furthermore, the formation of a fuzzy region around the non-erosion-producing area can be suppressed, thereby reducing particle generation, and the resulting plasma distribution can be stabilized. This can achieve the following effects: Regardless of the magnet's swing position, the uniformity of the film thickness distribution and the distribution of film thickness characteristics can be improved.

The following describes a sputtering apparatus and sputtering method according to an embodiment of the present invention with reference to the accompanying drawings. Figure 1 is a schematic top view of a sputtering apparatus according to this embodiment. In Figure 1 , reference numeral 1 represents the sputtering apparatus.

<Sputtering Apparatus 1> The sputtering apparatus 1 of this embodiment is an example of an inter-back vacuum processing apparatus. This type of vacuum processing apparatus can be used, for example, in the manufacturing process of semiconductor devices, liquid crystal displays, organic EL (electroluminescence) displays, and other FPD (flat panel display) manufacturing processes. Specifically, in this vacuum processing apparatus, when forming TFTs (Thin Film Transistors) on substrates such as glass, the substrate, which is made of glass or resin, undergoes heating, film formation, and etching in a vacuum environment.

In this embodiment, the glass substrate 11 (film formation substrate, transparent substrate) can be a substrate with a side length of approximately 100 mm or a rectangular substrate with a side length of 2000 mm or longer. Furthermore, substrates with a thickness of 1 mm or less, a thickness of several mm, or a thickness of 10 mm or greater can also be used as the glass substrate 11.

As shown in FIG1 , the sputtering apparatus 1 includes a loading/unloading chamber 2 (vacuum chamber), a film forming chamber 4 (vacuum chamber), and a transfer chamber 3. The loading/unloading chamber 2 carries a roughly rectangular glass substrate 11 from the outside into the loading/unloading chamber 2, or carries the loading/unloading chamber 2 out of the loading/unloading chamber 2. In the film forming chamber 4, a film such as a ZnO-based or In ₂ O ₃ -based transparent conductive film, a film of a metal or oxide such as aluminum or silver, and other films are formed on the glass substrate 11 by sputtering. The film forming chamber 4 is pressure-resistant. The transfer chamber 3 is located between the film forming chamber 4 and the loading/unloading chamber 2. FIG1 shows a side sputtering apparatus as the sputtering apparatus 1 of this embodiment. A sputter-down sputtering apparatus or a sputter-up sputtering apparatus may be used as the sputtering apparatus 1 .

Furthermore, in addition to the above-mentioned structure, the sputtering apparatus 1 also has a film forming chamber 4A (vacuum chamber) and a loading/unloading chamber 2a (vacuum chamber). The plurality of vacuum chambers 2, 2a, 4, and 4A are arranged so as to surround the transfer chamber 3. The sputtering apparatus 1 having such a vacuum chamber is configured to have, for example, two loading/unloading chambers (vacuum chambers) formed adjacent to each other and a plurality of processing chambers (vacuum chambers). For example, one of the loading/unloading chambers 2 and 2a is a loading chamber for carrying the glass substrate 11 from the outside to the inside of the sputtering apparatus 1 (vacuum processing apparatus). The other of the loading/unloading chambers 2 and 2a is an unloading chamber for carrying the glass substrate 11 from the inside of the sputtering apparatus 1 to the outside. Furthermore, the film forming chamber 4 and the film forming chamber 4A may be configured to perform different film forming steps.

It is sufficient that a partition valve is formed between each of the vacuum chambers 2 , 2 a , 4 , 4A and the transfer chamber 3 .

A positioning member may also be provided in the loading/unloading chamber 2 to determine the placement and alignment of the glass substrate 11 brought in from outside the sputtering apparatus 1. Furthermore, a rough exhaust device (rough exhaust device, low vacuum exhaust device) such as a rotary pump is provided in the loading/unloading chamber 2 to perform rough vacuuming of the interior of the loading/unloading chamber 2.

As shown in Figure 1, a transfer device 3a (transfer robot) is located within the transfer chamber 3. In the following description, it will sometimes be referred to as the transfer robot 3a. The transfer device 3a comprises a rotating shaft, a robotic arm mounted on the rotating shaft, a hand formed at one end of the robotic arm, and an up-and-down mechanism for moving the hand. The hand arm includes a first master arm, a second master arm, a first slave arm, and a second slave arm, all of which are rotatable relative to each other. The transfer device 3a is capable of moving glass substrates 11, serving as transport objects, between each of the vacuum chambers 2, 2a, 4, and 4A and the transfer chamber 3.

As shown in Figure 1, the film-forming chamber 4 is equipped with a cathode device 10, a substrate holder 13 (including a mask and other components) that serves as a substrate holder, a gas introduction system, and a high-vacuum exhaust system. As shown in Figure 1, the interior of the film-forming chamber 4 includes a front space 41, which exposes the surface of the glass substrate 11 during film formation, and a back space 42, located on the back side of the glass substrate 11. The cathode device 10 is located within the front space 41.

The cathode assembly 10 is vertically positioned within the film-forming chamber 4, at a position farthest from the transfer port 4a connected to the transfer chamber 3. As shown in Figure 1 , the substrate holder 13 (substrate holder) is positioned within the rear space 42. The substrate holder 13 supports the glass substrate 11 brought in from the transfer port 4a.

The substrate holding portion 13 holds the glass substrate 11 so that a target 23 described below faces the surface 11a (film forming surface) of the glass substrate 11 during film formation. The substrate holding portion 13 holds the glass substrate 11 at a position corresponding to the film forming port 4b during film formation.

The substrate holder 13 may also include a swing shaft and a holding portion. The swing shaft, for example, extends below the rear space 42, approximately parallel to at least one of the transfer port 4a and the film-forming port 4b. The holding portion is attached to the swing shaft and holds the backside of the glass substrate 11. The gas introduction device introduces gas into the film-forming chamber 4. The high vacuum exhaust device is a turbomolecular pump, for example, that reduces the pressure inside the film-forming chamber 4 to achieve a high vacuum state.

<Cathode Assembly 10> Figure 2 is a perspective view of the cathode assembly 10 of the sputtering apparatus 1 according to this embodiment. Figure 3 is a schematic diagram showing the positional relationship between the glass substrate and the cathode assembly in the sputtering apparatus according to this embodiment.

Figures 2-6 and 8-11 use an XYZ orthogonal coordinate system. The Z direction is the vertical direction (the direction of gravity). Furthermore, the Z direction is the longitudinal direction of the glass substrate 11. The Y direction is the thickness direction of the glass substrate 11. Furthermore, the Y direction is the thickness direction of the magnetic yoke. The X direction is the width direction of the glass substrate 11. In the following description, the plane parallel to the Z and X directions is sometimes referred to as the ZX plane. Furthermore, the X direction corresponds to the swing direction. In this case, the Z direction intersecting the X direction corresponds to the intersecting direction intersecting the swing direction. The cathode device 10 enables the glass substrate 11, which is located at the film forming position (plasma processing position) within the film forming chamber 4, to be swung in the X direction.

The cathode apparatus 10 includes a cathode box 10A and a cathode unit 22. As shown in Figure 2, the cathode unit 22 is disposed within the cathode box 10A. Figure 2 shows a vertical cathode apparatus 10 in which the glass substrate 11 and target 23 are arranged vertically. A down deposition cathode apparatus 10 can also be used. In a down deposition cathode apparatus, the glass substrate 11 is positioned below the target 23 with the glass substrate 11 facing horizontally. In this position, a film is formed on the glass substrate 11. Here, the horizontal direction refers to a direction parallel to the X and Y directions.

<Cathode Unit 22> As shown in Figure 3, the cathode unit 22 is arranged along the ZX plane opposite the surface of the glass substrate 11. The cathode unit 22 is configured to emit sputtering particles toward the treated surface 11a of the glass substrate 11. Within the cathode unit 22, a target 23, a backing plate 24, and a magnetic unit MU (magnetic circuit) are arranged in this order, in a direction from the glass substrate 11 toward the magnetic scanning unit 29 (opposite to the Y direction shown in Figure 3). The magnetic scanning unit 29 will be described below.

<Target 23> Figure 4 is a front view showing the positional relationship between the glass substrate, target, and magnet unit in the sputtering apparatus of this embodiment. Target 23 is formed into a flat plate parallel to the ZX plane facing the glass substrate 11. Target 23 is positioned so as to face the glass substrate 11. In other words, as shown in Figure 3, target 23 has a surface 23a facing the glass substrate 11. As shown in Figure 2, target 23 is exposed on the surface of cathode box 10A at a position facing the glass substrate 11. As shown in Figures 3 and 4, target 23 has a greater width in the Z direction than glass substrate 11. Furthermore, target 23 has a greater width in the X direction than glass substrate 11. An anode 28 is provided around target 23. The anode 28 covers the backing plate 24 that protrudes outward from the ends of the target 23 in both the X and Z directions. In other words, in the Y direction, the anode 28 is positioned between the glass substrate 11 and the backing plate 24. The anode 28 is positioned around the entire circumference of the target 23 in both the X and Z directions.

<Backing Plate 24> The backing plate 24 is a flat plate shaped along the ZX plane facing the glass substrate 11. It is bonded to the surface of the target 23 that does not face the glass substrate 11, that is, the surface of the target 23 opposite the surface 23a. A control unit 26 equipped with a DC power supply is connected to the backing plate 24. DC power supplied from the DC power supply is supplied to the target 23 via the backing plate 24. Instead of a DC power supply, a DC power supply, a pulse power supply, or an RF (Radio Frequency) power supply can be used as the cathode power supply. The cathode unit 22 is provided with the target 23 along the ZX plane facing the processed surface 11a of the glass substrate 11.

<Magnet Unit MU> The cathode unit 22 includes a magnet unit MU. The magnet unit MU includes a plurality of magnets 25 and two auxiliary magnets 27. The magnet unit MU is located on the side of the backing plate 24 opposite the target 23. In other words, the glass substrate 11 is located on the front side of the target 23, while the magnet unit MU is located on the back side of the target 23.

The magnet unit MU is a multi-linked magnet. In the magnet unit MU, a plurality of magnets 25 are arranged parallel to one another and spaced evenly apart in the X direction. The magnets 25 are arranged vertically in the Z direction, with the longitudinal direction of each magnet 25 parallel to the Z direction. In the magnet unit MU of this embodiment, for example, nine magnets 25 are arranged in the X direction. Specifically, the magnet unit MU includes a first magnet 25F, a second magnet 25S, a third magnet 25T, a fourth magnet 25Y, a fifth magnet 25G, a sixth magnet 25R, a seventh magnet 25V, an eighth magnet 25E, and a ninth magnet 25N. In this embodiment, the number of magnets 25 is nine. The number of magnets 25 can be determined based on the area of the glass substrate 11, the area of the target 23, or the swing range of the magnets 25 described below. In other words, the magnet unit MU includes N magnets 25 (N is an integer greater than or equal to 2). In this case, the magnets 25 that house the auxiliary magnets 27 are the (N-1)th and Nth magnets. Furthermore, in the cathode unit 22 of this embodiment, the target 23 is fixed relative to the glass substrate 11. The cathode unit 22 is fixed to the film forming chamber 4.

Each of the nine magnets 25 forms a magnetron magnetic field on the surface 23a of the target 23 facing the glass substrate 11. Each of the nine magnets 25 is individually connected to a control unit 26. The control unit 26 can control the magnetic field state generated by each of the nine magnets 25.

<Magnetic Field Generating Regions MG1, MG2, and MG3> Each of the nine magnets 25 has three magnetic field generating regions arranged along the Z direction: a first magnetic field generating region MG1, a plurality of second magnetic field generating regions MG2, and a third magnetic field generating region MG3. The first magnetic field generating region MG1 is located on one side of the magnet in the Z direction. The third magnetic field generating region MG3 is located on the other side of the magnet in the Z direction. The plurality of second magnetic field generating regions MG2 are located between the first and third magnetic field generating regions MG1 and MG3. In this embodiment, the number of the plurality of second magnetic field generating regions MG2 is five. The number of the plurality of second magnetic field generating regions MG2 is not limited to this embodiment and may be less than five or may be six or more. These multiple magnetic field generating regions MG1, MG2, and MG3 can be connected continuously in the Z direction or divided in the Z direction. This embodiment describes the structure in which multiple magnetic field generating regions MG1, MG2, and MG3 are connected.

Figure 5 is an enlarged front view of the end of the magnet unit MU of the sputtering apparatus of this embodiment. Figure 6 is an enlarged cross-sectional view of the end of the magnet unit MU of the sputtering apparatus of this embodiment. Furthermore, Figures 5 and 6 respectively illustrate the configuration of the magnets and auxiliary magnets that comprise the magnet unit MU. Figure 5 shows the first magnet 25F, the second magnet 25S, and the auxiliary magnet 27. Figure 5 also shows the first magnet 25F and the auxiliary magnet 27. Figure 5 also shows a portion of the first magnetic field generating region MG1 and the second magnetic field generating region MG2 shown in Figure 4. In the following description, the auxiliary magnet provided in the first magnet 25F is described, and the description of the auxiliary magnet provided in the ninth magnet 25N may be omitted. When describing the common structure of the first magnet 25F to the ninth magnet 25N, the first magnet 25F to the ninth magnet 25N may be simply referred to as magnet 25.

As shown in FIG. 4 to FIG. 6 , each of the first to ninth magnets 25F to 25N includes a yoke 31 , an auxiliary yoke 31 d , a peripheral magnet portion 32 , and a central magnet portion 33 .

<Magnetic Yoke 31 and Auxiliary Magnetic Yoke 31d> The magnetic yoke 31 is a magnetic base (magnetic material) that is a generally rectangular flat plate when viewed along the Y direction. The magnetic yoke 31 has a central region 31C on its surface 31S. The auxiliary yoke 31d is adjacent to the magnetic yoke 31. The auxiliary yoke 31d is made of a magnetic material or a dielectric material. The plurality of magnets 25 that constitute the magnetic unit MU are disposed on the yoke 31.

<Peripheral Magnet 32 and Central Magnet 33> The peripheral magnet 32 is separated from the central magnet 33 within the plane of the yoke 31. The peripheral magnet 32 is a substantially oblong annular magnet disposed along the periphery of the central magnet 33, surrounding it. The central magnet 33 is a rectilinear composite magnet. The longitudinal direction of the composite magnet corresponds to the Z direction. The central magnet 33 is located at the center position 31CP in the X direction of the central region 31C of the yoke 31.

The central magnetic portion 33 and the peripheral magnetic portion 32 form a magnetic circuit on the surface 31S of the yoke 31. This magnetic circuit overlaps with the backing plate 24. In the center portion MP of the magnet 25, which is the longitudinal direction (Z direction), the central magnetic portion 33 and the peripheral magnetic portion 32 are parallel to each other. The area where the central magnetic portion 33 and the peripheral magnetic portion 32 are parallel to each other is the parallel region PR.

The central magnetic portion 33 is divided into a plurality of magnets along the Z direction in which the central magnetic portion 33 extends. In other words, the central magnetic portion 33 includes a plurality of divided magnets. The central magnetic portion 33 is formed by arranging the plurality of divided magnets continuously in the Z direction. Similarly, the peripheral magnetic portion 32 is divided into a plurality of magnets along the Z direction in which the peripheral magnetic portion 32 extends. In other words, the peripheral magnetic portion 32 includes a plurality of divided magnets. The peripheral magnetic portion 32 is formed by arranging the plurality of divided magnets continuously in the Z direction. Furthermore, as shown in Figures 5 and 6 , the peripheral magnet portion 32 includes an end peripheral magnet portion 32a located at an end in the Z direction. The end peripheral magnet portion 32a extends in the X direction. Furthermore, the peripheral magnet portion 32 includes a first peripheral magnet portion 32b. The first peripheral magnet portion 32b is adjacent to the end peripheral magnet portion 32a in the Z direction. The first peripheral magnet portion 32b extends in the Z direction, which is its longitudinal direction. The end peripheral magnet portion 32a may also include a portion extending in the Z direction adjacent to the first peripheral magnet portion 32b. In other words, as shown in Figure 5 , the end peripheral magnet portion 32a may have a substantially C-shape at one end of the magnet 25 in the Z direction. Furthermore, at the other end of the magnet 25 in the Z direction, the end peripheral magnetic portion 32a may also have a generally inverted C shape.

The peripheral magnet portion 32 includes a second peripheral magnet portion 32c extending in the Z direction. The second peripheral magnet portion 32c is adjacent to the first peripheral magnet portion 32b in the longitudinal direction. The second peripheral magnet portion 32c is located on the opposite side of the first peripheral magnet portion 32b in the Z direction from the end peripheral magnet portion 32a. The peripheral magnet portion 32 includes a third peripheral magnet portion 32d extending in the Z direction. The third peripheral magnet portion 32d is adjacent to the second peripheral magnet portion 32c in the longitudinal direction. The third peripheral magnet portion 32d is located on the side opposite the first peripheral magnet portion 32b in the Z direction relative to the second peripheral magnet portion 32c. The peripheral magnet portion 32 has a fourth peripheral magnet portion 32e extending in the Z direction. The fourth peripheral magnet portion 32e is adjacent to the third peripheral magnet portion 32d in the longitudinal direction. The fourth peripheral magnet portion 32e is located on the side opposite the second peripheral magnet portion 32c in the Z direction relative to the third peripheral magnet portion 32d. The peripheral magnet portion 32 has a fifth peripheral magnet portion 32f extending in the Z direction. The fifth peripheral magnet portion 32f is adjacent to the fourth peripheral magnet portion 32e in the longitudinal direction. The fifth peripheral magnet portion 32f is located on the opposite side of the third peripheral magnet portion 32d relative to the fourth peripheral magnet portion 32e in the Z direction.

Furthermore, the peripheral magnet portion 32 has a segmented portion extending in the Z direction (see Figure 4). This segmented portion is adjacent to the fifth peripheral magnet portion 32f. The segmented portion of the peripheral magnet portion 32 is located in the parallel region PR. In the peripheral magnet portion 32, each of the end peripheral magnet portion 32a, the first peripheral magnet portion 32b, the second peripheral magnet portion 32c, the third peripheral magnet portion 32d, and the fourth peripheral magnet portion 32e is a permanent magnet. In the peripheral magnet portion 32, the end peripheral magnet portion 32a, the first peripheral magnet portion 32b, the second peripheral magnet portion 32c, the third peripheral magnet portion 32d, and the fourth peripheral magnet portion 32e can be configured to independently generate different magnetic fields or to generate magnetic fields of equal strength. In the peripheral magnet portion 32, the fifth peripheral magnet portion 32f and the segment extending from the fifth peripheral magnet portion 32f in the Z direction are permanent magnets.

As shown in Figures 5 and 6 , the central magnet portion 33 includes a first coil portion 35b. The first coil portion 35b is located at the end in the Z direction, which serves as the longitudinal direction. The first coil portion 35b is adjacent to the end peripheral magnet portion 32a in the Z direction. The first coil portion 35b is composed of coil wire wound around an axis parallel to the Y direction, which serves as the vertical direction in Figure 5 . Specifically, the first coil portion 35b includes a first core portion 34b parallel to the Y direction, and is composed of coil wire wound around the first core portion 34b. The first core portion 34b is located at the center of the coil. The first core portion 34b is a permanent magnet. The first coil portion 35b is positioned in the Z direction, aligned with the first peripheral magnet portion 32b. The center of the first core portion 34b is positioned approximately at the same position as the center of the first peripheral magnet portion 32b in the Z direction. The first coil portion 35b does not contact the end peripheral magnet portion 32a or the first peripheral magnet portion 32b.

The central magnet portion 33 has a second coil portion 35c adjacent to the first coil portion 35b. The second coil portion 35c is located on the side opposite to the end peripheral magnet portion 32a relative to the first coil portion 35b in the Z direction. The second coil portion 35c has a second core 34c located at the center of the second coil portion 35c. The second core 34c is a permanent magnet. The second coil portion 35c is arranged at a position consistent with the second peripheral magnet portion 32c in the Z direction. The center of the second core 34c is arranged at a position approximately the same as the center position of the second peripheral magnet portion 32c in the Z direction. The second coil portion 35c does not contact the first coil portion 35b and the second peripheral magnet portion 32c.

The central magnet portion 33 includes a third coil portion 35d adjacent to the second coil portion 35c. The third coil portion 35d is located on the opposite side of the first coil portion 35b relative to the second coil portion 35c in the Z direction. The third coil portion 35d includes a third core 34d located at the center of the third coil portion 35d. The third core 34d is a permanent magnet. The third coil portion 35d is positioned in the Z direction in a manner consistent with the third peripheral magnet portion 32d. The center of the third core 34d is positioned in the Z direction at a position substantially identical to the center of the third peripheral magnet portion 32d. The third coil portion 35d does not contact the second coil portion 35c or the third peripheral magnet portion 32d.

The central magnet portion 33 includes a fourth coil portion 35e adjacent to the third coil portion 35d. The fourth coil portion 35e is located on the side opposite the second coil portion 35c relative to the third coil portion 35d in the Z direction. The fourth coil portion 35e includes a fourth core 34e located at the center of the fourth coil portion 35e. The fourth core 34e is a permanent magnet. The fourth coil portion 35e is positioned in the Z direction in a manner consistent with the fourth peripheral magnet portion 32e. The center of the fourth core 34e is positioned in the Z direction at a position substantially identical to the center of the fourth peripheral magnet portion 32e. The fourth coil portion 35e does not contact the third coil portion 35d or the fourth peripheral magnet portion 32e.

The central magnet portion 33 has a fifth magnet portion 37 adjacent to the fourth coil portion 35e. The fifth magnet portion 37 is located on the side opposite to the third coil portion 35d relative to the fourth coil portion 35e in the Z direction. The fifth magnet portion 37 is a permanent magnet. The fifth magnet portion 37 is arranged at a position consistent with the fifth peripheral magnet portion 32f in the Z direction. The fifth magnet portion 37 is arranged approximately parallel to the fifth peripheral magnet portion 32f. As shown in Figure 5, the fifth magnet portion 37 is arranged at a position approximately the same as the first core portion 34b to the fourth core portion 34e in the X direction. In other words, the first core portion 34b to the fourth core portion 34e and the fifth magnet portion 37 are arranged along the Z direction. The fifth magnetic portion 37 has substantially the same length as the fifth peripheral magnetic portion 32f in the Z direction. The fifth magnetic portion 37 does not contact the fourth coil portion 35e or the fifth peripheral magnetic portion 32f.

Furthermore, the central magnetic portion 33 has a segmented portion extending in the Z direction. This segmented portion is adjacent to the fifth magnetic portion 37. The segmented portion of the central magnetic portion 33 is located in the parallel region PR. In the central magnetic portion 33, each of the first coil portion 35b, the second coil portion 35c, the third coil portion 35d, and the fourth coil portion 35e is connected to the control unit 26 (see Figure 3), which has a power supply function. In other words, the control unit 26 functions as a power source. In the central magnetic portion 33, current is independently supplied to each of the first coil portion 35b, the second coil portion 35c, the third coil portion 35d, and the fourth coil portion 35e. As a result, the first coil portion 35b, the second coil portion 35c, the third coil portion 35d, and the fourth coil portion 35e can generate different magnetic fields.

Furthermore, the central magnetic portion 33 includes a long core portion 36 extending in the Z direction. In the central magnetic portion 33, each of the first core portion 34b, the second core portion 34c, the third core portion 34d, and the fourth core portion 34e has an end portion located on the side opposite the yoke 31 in the Y direction. These four ends are adjacent to the long core portion 36. The long core portion 36 is positioned at approximately the same X-direction position as the fifth magnetic portion 37. In other words, the long core portion 36 and the fifth magnetic portion 37 are aligned in the Z direction. The long core portion 36 is a permanent magnet or a magnetic material. In the central magnet portion 33, the long core portion 36 forms a magnetic circuit with the peripheral magnet portion 32a, the first peripheral magnet portion 32b, the second peripheral magnet portion 32c, the third peripheral magnet portion 32d, and the fourth peripheral magnet portion 32e of the peripheral magnet portion 32. In the central magnet portion 33, each of the first coil portion 35b through the fourth coil portion 35e is independently supplied with current. This allows for adjustment of the magnetic field intensity and distribution within the magnetic circuit encompassing the long core portion 36 and the peripheral magnet portion 32.

Furthermore, in the above example, the first to fourth coil portions 35b, 35e that comprise the central magnetic portion 33 are electromagnetic. However, the composition of the central magnetic portion 33 is not limited to electromagnetic. A permanent magnet corresponding to the long core portion 36 may also be used as the central magnetic portion 33. Figure 5 shows one end of the magnet 25 in the Z direction, but the other end of the magnet 25 may also have the same composition as that of the one end of the magnet 25 described above.

<Magnetic Scanning Unit 29> The cathode device 10 includes a magnetic scanning unit 29. The magnetic scanning unit 29 moves the magnet unit MU along a swing direction, which serves as one scanning direction. The swing direction is the X direction, which is perpendicular to the Z direction in which the multiple magnet units MU are vertically arranged. In other words, the magnetic scanning unit 29 can reciprocate the magnet unit MU relative to the glass substrate 11. The magnetic scanning unit 29 changes the position of the magnet unit MU relative to the target 23. The magnetic scanning unit 29 can swing the magnet unit MU without changing the relative positional relationship of the multiple magnets 25 that constitute the magnet unit MU. That is, the magnet unit MU can be moved (swayed) relative to the target 23 in parallel with the particle emission surface of the target 23 by the magnet scanning section 29.

The magnetic scanning unit 29 includes, for example, a rail, a roller, and multiple motors. The rail extends in the scanning direction. The roller is attached to each of the two ends of the cathode unit 22 in the X direction. The motor rotates each roller. The magnetic scanning unit 29 may also include an LM guide (linear motion guide) having a rail extending in the scanning direction. The rail of the magnetic scanning unit 29 has a width in the scanning direction (X direction) that is the same as or greater than that of the target 23. Furthermore, the configuration of the magnetic scanning unit 29 is not limited to the above configuration as long as the magnetic scanning unit 29 can move the multiple magnets 25 in the scanning direction as a whole. The magnetic scanning unit 29 may also be applied to a structure other than a structure having a rail, a roller, and a motor.

<Auxiliary Magnets 27> As shown in Figure 4, two auxiliary magnets 27 are positioned at both ends of the magnet unit MU in the X direction. In other words, one auxiliary magnet 27 (the first auxiliary magnet) is positioned at one end (the first end) of the magnet unit MU in the X direction. Another auxiliary magnet 27 (the second auxiliary magnet) is positioned at the other end (the second end) of the magnet unit MU in the X direction. The auxiliary magnets 27 are positioned on the opposite side of the glass substrate 11 from the target 23. They are attached to the yokes 31 that form the magnetic circuits in each of the first magnet 25F and the ninth magnet 25N.

Furthermore, in this embodiment, the magnet unit MU is composed of an array of nine magnets 25. A first magnet 25F is positioned at one end of the magnet unit MU in the X direction (the first end, the first end of the array). A ninth magnet 25N is positioned at the other end of the magnet unit MU in the X direction (the second end, the second end of the array). In this configuration, an auxiliary magnet 27 is positioned at the end (outer edge) of the first magnet 25F on the side opposite the second magnet 25S in the X direction. Another auxiliary magnet 27 is positioned at the end (outer edge) of the ninth magnet 25N on the side opposite the eighth magnet 25E in the X direction. In other words, an auxiliary magnet 27 is positioned at the swinging end, which is one end of the magnet unit MU in the X direction. Furthermore, another auxiliary magnet 27 is located at the other end of the magnet unit MU in the X direction, which is the swing end. Specifically, the auxiliary magnet 27 is located at the outer edges of the magnets at the first swing end and the outer edges of the magnets at the second swing end of the magnet unit MU in the X direction.

Specifically, the auxiliary magnet 27 has the function of tilting the magnetic field lines formed by the magnet 25 located at the first swing end toward the second swing end, along the magnet 25 located at the first swing end. The auxiliary magnet 27 is arranged along the magnet 27 located at the first swing end, on the side opposite to the second swing end.

As shown in Figures 4-6, the auxiliary magnet 27 is a linear magnet parallel to the peripheral magnet portion 32. The auxiliary magnet 27 extends in the Z direction. The auxiliary magnet 27 has the same polarity as the peripheral magnet portion 32 closest to the auxiliary magnet 27. That is, as shown in Figure 6, if the peripheral magnet portion 32 has an N pole, the auxiliary magnet 27 has the same polarity as the peripheral magnet portion 32—that is, an N pole. The auxiliary magnet 27 is located at the outermost ends of the magnet unit MU in the X direction. In other words, the auxiliary magnet 27 is positioned adjacent to the outermost peripheral magnet portion 32 of the first magnet 25F in the X direction. Furthermore, the auxiliary magnet 27 is positioned adjacent to the outermost peripheral magnet portion 32 of the ninth magnet 25N in the X direction. In other words, the auxiliary magnet 27 is not positioned on the second through eighth magnets 25S, 25E. In other words, the auxiliary magnet 27 is positioned only at positions corresponding to the ends of the target 23 in the X direction.

The auxiliary magnet 27 has the same length as the peripheral magnet portion 32 closest to the auxiliary magnet 27. That is, the Z-direction dimension of the auxiliary magnet 27 is approximately equal to the Z-direction dimensions of the first magnet 25F and the ninth magnet 25N located at the two ends of the magnet unit MU in the X-direction. Here, the Z-direction dimension of the auxiliary magnet 27 is approximately 5 mm greater or less than the Z-direction dimensions of the first magnet 25F and the ninth magnet 25N.

The auxiliary magnet 27 is a magnet having a rectangular shape in a top view, similar to the peripheral magnet portion 32 closest to the auxiliary magnet 27. The auxiliary magnet 27 has the same cross-sectional shape as the peripheral magnet portion 32 along its entire length in the Z direction. The auxiliary magnet 27 is extremely close to the peripheral magnet portion 32 closest to the auxiliary magnet 27 in the X direction. Specifically, as shown in FIG6 , the auxiliary magnet 27 is in extremely close contact with the peripheral magnet portion 32 closest to the auxiliary magnet 27 in the X direction; or, as described below, the auxiliary magnet 27 may be separated by a specific distance in the X direction.

The auxiliary magnet 27 has a protrusion 27a. In this embodiment, the protrusion 27a is a portion of the magnet 25 that extends in the Z direction, with respect to the ZX plane formed by the end surface 30 (pole plane) of the peripheral magnetic portion 32. The protrusion 27a extends in the Z direction and projects from the ZX plane toward the Y direction. In the following description, the end surface 30 is sometimes referred to as the pole plane 30.

Furthermore, the front end of the protrusion 27a may protrude from the magnetic pole plane 30 toward the target 23. The front end of the protrusion 27a may also be located at the same position as the magnetic pole plane 30 in the Y direction. The front end of the protrusion 27a may also be farther from the target 23 than the magnetic pole plane 30.

The auxiliary magnet 27 is tilted relative to the magnetic pole plane 30. Specifically, as shown in Figure 6 , the auxiliary magnet 27 can be tilted at an angle θ relative to the ZX plane. Here, angle θ refers to the angle relative to the Y direction, which is the normal to the surface 23a of the target 23. In other words, the auxiliary magnet 27 rotates at an angle θ about an axis parallel to the Z direction. This angle θ is also referred to as the "magnet tilt angle."

Let's explain the "magnet tilt angle" in more detail. The auxiliary magnet 27 has a first magnetic pole surface 27F and a second magnetic pole surface 27S located on the opposite side of the first magnetic pole surface 27F. The first magnetic pole surface 27F faces the backing plate 24. In other words, the first magnetic pole surface 27F is exposed in the space SP between the backing plate 24 and the magnet 25. The second magnetic pole surface 27S is the surface that contacts the auxiliary magnetic yoke 31d described below. The symbol 27Q indicates the center position of the first magnetic pole surface 27F, that is, the center position between the first corner C1 and the second corner C2. The symbol 27R indicates the center position of the second magnetic pole surface 27S, that is, the center position between the third corner C3 and the fourth corner C4. In the auxiliary magnet 27, the line perpendicular to the first magnetic pole surface 27F and the second magnetic pole surface 27S and passing through the center positions 27Q and 27R is the magnet tilt line 27D. In other words, the line passing through the center position 27R and perpendicular to the second magnetic pole surface 27S is the magnet tilt line 27D. The angle θ between the magnet tilt line 27D and the Y direction, which is the normal to the surface 23a of the target 23, is the magnet tilt angle. The magnet tilt line 27D extending from the second magnetic pole surface 27S toward the first magnetic pole surface 27F is oriented toward the swing region SW of the magnet 25. The angle θ is in the range of 0 deg to 90 deg, more preferably in the range of 0 deg to 60 deg, further preferably in the range of 0 deg to 45 deg, or in the range of 0 deg to 30 deg.

<Variations of the Auxiliary Magnet 27> Figure 27 shows a variation of the auxiliary magnet 27. The auxiliary magnet 27 shown in Figure 27 has a pentagonal shape when viewed from above. The auxiliary magnet 27 includes a first magnetic pole surface 27F having a vertex and a second magnetic pole surface 27S. The first magnetic pole surface 27F has two sides. The vertex connecting the two sides corresponds to a center position 27Q. The second magnetic pole surface 27S has a center position 27R. A protrusion 27a is formed at the center position 27Q of the first magnetic pole surface 27F of the auxiliary magnet 27. The protrusion 27a has a convex shape. In the auxiliary magnet 27 shown in Figure 27 , a line perpendicular to the second magnetic pole surface 27S and passing through center positions 27Q and 27R is the magnet tilt line 27D. The angle θ between the magnet tilt line 27D and the Y direction, which is the normal to the surface 23a of the target 23, is the magnet tilt angle. The magnet tilt line 27D, extending from the second magnetic pole surface 27S toward the first magnetic pole surface 27F, faces the swing region SW of the magnet 25.

The magnetic strength of the auxiliary magnet 27 is equal to or less than the magnetic strength of the peripheral magnet portion 32 closest to the auxiliary magnet 27. Specifically, the magnetic strength of the auxiliary magnet 27 can be set to be within a range of 1/2 to 3/4, or 1/2 to 1/3, of the magnetic strength of the peripheral magnet portion 32 closest to the auxiliary magnet 27. The magnetic strength of the peripheral magnet portion 32 can be set to be 1 to 1.5 times, or 1.1 to 1.4 times, of the magnetic strength of the auxiliary magnet 27, for example, approximately 1.39 times.

As shown in Figure 6, the auxiliary magnet 27 is secured to the yoke 31 via an auxiliary yoke 31d. The auxiliary yoke 31d is adjacent to the X-direction end of the yoke 31. The auxiliary yoke 31d may also be integrally formed with the yoke 31. In this case, the auxiliary yoke 31d is formed from the same material as the yoke 31. The auxiliary yoke 31d may be made of a magnetic or dielectric material. The auxiliary yoke 31d and the auxiliary magnet 27 are removable from the yoke 31. The auxiliary magnet 27 is secured to the auxiliary yoke 31d by a securing member 27g so as to maintain the aforementioned specific angle θ. As a result, the second magnetic pole surface 27S of the auxiliary magnet 27 abuts the auxiliary yoke 31d. This creates a magnetic circuit that combines the magnetic circuit formed by the central magnet portion 33, the peripheral magnet portion 32, and the yoke 31, with the magnetic circuit formed by the auxiliary magnet 27 and the auxiliary yoke 31d.

In the cathode unit 22 of this embodiment, as shown in Figures 3 and 4, sputtering particles are emitted from a target, forming a film on the glass substrate 11. At this time, the magnetic scanning unit 29 reciprocates the magnetic unit MU between the swing end Revers and the swing end Forward. In this embodiment, the swing end Forward is an example of the "first swing end." The swing end Revers is an example of the "second swing end." Furthermore, when the swing end Forward is the "second swing end," the swing end Revers becomes the "first swing end."

In the cathode unit 22, the magnetic scanning unit 29 moves the multi-connected magnet composed of a plurality of magnets 25, namely the magnetic unit MU, together. Specifically, as shown in Figure 3, first, the magnetic scanning unit 29 moves the magnetic unit MU from the central position center in the swing direction (X direction) to the right to the swing end Forward. Thereafter, the magnetic scanning unit 29 moves the magnetic unit MU from the swing end Forward to the left via the central position center to the swing end Revers. Thereafter, the magnetic scanning unit 29 moves the magnetic unit MU from the swing end Revers to the central position center. Through this series of movement actions, one scan is completed. In the cathode unit 22, this scan is repeated multiple times.

Simultaneously, in each of the first magnet 25F through the ninth magnet 25N that constitute the magnet unit MU, the control unit 26, functioning as a power source, applies current to the first coil portion 35b, second coil portion 35c, third coil portion 35d, and fourth coil portion 35e of the central magnet portion 33 at the Z-direction end. This creates a magnetic field within the magnet 25. At this point, a magnetic circuit is formed by the central magnet portion 33, the peripheral magnet portion 32, and the yoke 31. Furthermore, a magnetic circuit is also formed within the first magnet 25F and the ninth magnet 25N by the auxiliary magnet 27 and the auxiliary yoke 31d.

Next, the film formation on the glass substrate 11 in the sputtering apparatus 1 of this embodiment will be described.

First, the glass substrate 11 is loaded from outside the sputtering apparatus 1 into the interior. Next, the glass substrate 11 is placed on a positioning member in the loading/unloading chamber 2. Thus, the glass substrate 11 is aligned so as to be positioned at a specific position on the positioning member (see FIG. 1 ).

Next, the glass substrate 11 placed on the positioning member of the loading/unloading chamber 2 is supported by the robot of the transfer device 3a. The glass substrate 11 is taken out of the loading/unloading chamber 2 and then transferred to the film forming chamber 4 via the transfer chamber 3.

At this point, within the film-forming chamber 4, the drive unit rotates the swing axis of the substrate holder 13, placing the substrate holder 13 in a horizontal placement position. Furthermore, the lift pins (not shown) are positioned in a standby position, projecting upward from the substrate holder 13. In this state, the glass substrate 11, which has arrived in the film-forming chamber 4, is inserted onto the upper side of the substrate holder 13 by the transfer device 3a.

Next, the robot arm of the transport device 3a approaches the substrate holder 13, aligning the glass substrate 11 with a specific in-plane position on the substrate holder 13 and placing the glass substrate 11 on the lift pins. The arm of the transport robot 3a then retreats toward the transport chamber 3. The lift pins then descend, supporting the glass substrate 11 on the substrate holder 13.

Next, the swing axis rotates, and while the glass substrate 11 is held by the substrate holder 13, it stands upright, reaching the lead processing position. This substantially closes the film forming opening 4b with the glass substrate 11, holding the glass substrate 11 in the film forming position. In this state, the magnetic field generated by the magnet unit MU generates plasma between the surface 23a of the target 23 and the glass substrate 11. The target 23 is sputtered, and the material constituting the target 23 adheres to the surface of the glass substrate 11. This allows the glass substrate 11 to undergo film formation.

At the completion of the film formation process, the swing axis rotates, and the glass substrate 11, held by the substrate holder 13, reaches a horizontal placement position. The transport device 3a removes the processed glass substrate 11 from the film formation chamber 4. The glass substrate 11 is then removed from the loading/unloading chamber 2 via the transport chamber 3.

The following describes the function of the auxiliary magnet 27 in this embodiment. Figure 7 is a schematic diagram of the target surface used to illustrate the function of the auxiliary magnet 27. Figure 8 is a diagram used to illustrate the function of the auxiliary magnet 27 and is a schematic diagram showing the electron tracking state when the auxiliary magnet 27 is not present. Figure 9 is a diagram used to illustrate the function of the auxiliary magnet 27 and is a schematic diagram showing the direction of magnetic field lines when the auxiliary magnet 27 is not present. First, the case without the auxiliary magnet 27 will be described.

As described above, the magnetic field formed by the magnet unit MU having the plurality of magnets 25 generates plasma between the surface 23a of the target 23 and the glass substrate 11. In this state, by setting the sputtering conditions described below, a film is formed on the surface of the glass substrate 11.

During sputtering, as shown in Figure 9, magnetic lines of force are generated from the peripheral magnet portion 32 at the north pole toward the central magnet portion 33 at the south pole. A magnetic circuit is formed by the central magnet portion 33, the peripheral magnet portion 32, and the magnetic yoke 31. Thus, as shown in Figure 8, electrons follow these magnetic lines of force.

At this point, at the target 23's swinging end within its swinging region SW, as shown in Figure 9, magnetic flux lines generated by the N-pole peripheral magnet portion 32 extend toward the anode 28 near the magnet 25. The magnetic flux density decreases on the target 23's surface 23a. Specifically, as shown in Figure 8, the tracking electron density becomes insufficient, and the plasma density becomes insufficient. As a result, as shown in Figure 7, no eroded regions are formed on the target 23's surface 23a at either end in the X direction, resulting in non-eroded regions E1. In Figure 9, the magnetic flux lines from the N-pole peripheral magnet portion 32 tilt leftward in the X direction toward the anode 28 as they extend toward the Y direction.

Furthermore, magnetic lines of force are formed from the N-pole peripheral magnet portion 32 toward the S-pole central magnet portion 33. These magnetic lines of force cause electrons on the surface 23a of the target 23 to orbit around the central magnet portion 33, which is surrounded by the peripheral magnet portion 32. At this time, along the length of the magnet 25, electrons moving in the Z direction from the central magnet portion 33, which is the end of the electron's movement direction, experience a slower movement speed and higher density near the region where the peripheral magnet portion 32a bends in the X direction.

As a result, the electron density decreases at locations where the electrons bend from the end peripheral magnet portion 32a along the peripheral magnet portion 32 from the X direction to the Z direction. Consequently, erosion of the target 23's surface 23a is reduced, forming a non-erosion region E2. This phenomenon occurs because the electrons orbiting the central magnet portion 33 in the adjacent magnets 25 have opposite directions and cancel each other out. Therefore, this phenomenon is observed in the two magnets 25 at the two ends of the magnet unit MU in the X direction. Furthermore, in each of the magnets 25 at the two ends of the magnet unit MU in the X direction, the non-erosion region E2 is formed on opposite sides in the Z direction.

As a result, when there are no auxiliary magnets 27, as shown in Figure 7, non-erosion areas E2 are formed at two of the four corners of the target 23, forming a diagonal area. In Figure 7, non-erosion areas are formed near the lower left and upper right corners. Furthermore, when non-erosion areas E1 and E2 are formed in this way, non-erosion areas E3 are also easily formed in areas other than the two diagonal areas. This is because when the non-erosion areas are formed, the supplied power applied is not consumed by plasma generation, resulting in a surplus. This surplus power is redistributed to areas other than the two diagonal non-erosion areas, or is absorbed as an overall voltage (power) fluctuation. Therefore, it can be considered that the plasma generation conditions change as the voltage changes.

Figure 10 illustrates the function of auxiliary magnet 27 and is a schematic diagram showing the electron tracking state when auxiliary magnet 27 is present. Figure 11 also illustrates the function of auxiliary magnet 27 and is a schematic diagram showing the direction of magnetic field lines when auxiliary magnet 27 is present. Next, the case with auxiliary magnet 27 will be described.

During sputtering, as shown in Figure 11, magnetic lines of force are formed from the peripheral magnet portion 32 at the north pole toward the central magnet portion 33 at the south pole. In this case, a magnetic circuit is formed, encompassing not only the central magnet portion 33, the peripheral magnet portion 32, and the yoke 31, but also the auxiliary magnet 27 and auxiliary yoke 31d. Thus, as shown in Figure 10, electrons follow these lines of force.

At this point, at the target 23's swinging end position within its swinging region, as shown in Figure 11 , the magnetic flux lines from the N-pole peripheral magnet portion 32 are influenced by the magnetic flux lines from the auxiliary magnet 27 and tilt rightward in the Y direction, orthogonal to the magnetic pole plane 30, rather than toward the anode 28 , or in the X direction. This prevents a decrease in the magnetic flux density on the target 23's surface 23a. In other words, as shown in Figure 10 , the tracking electron density, and therefore the plasma density, can be maintained at a sufficient level. Consequently, the non-erosion region E1 formed by the magnets 25 at both ends of the magnet unit MU in the X direction on the target 23's surface 23a, as shown in Figure 7 , can be suppressed.

Furthermore, the structure including the auxiliary magnet 27 forms a magnetic circuit including the central magnet portion 33, the peripheral magnet portion 32, the magnetic yoke 31, the auxiliary magnet 27, and the auxiliary magnetic yoke 31d. Therefore, the magnetic field lines from the north-pole peripheral magnet portion 32 toward the south-pole central magnet portion 33 cause electrons on the surface 23a of the target 23 to circulate around the central magnet portion 33 surrounded by the peripheral magnet portions 32. At the ends of the magnet 25, where the electrons move in the Z direction along the central magnet portion 33, the electrons are bent in the X direction along the end peripheral magnet portions 32a. However, this does not slow the electron's movement speed, and thus suppresses an increase in density.

As a result, electron density does not decrease at locations where electrons bend from the end peripheral magnet portion 32a along the peripheral magnet portion 32 from the X direction toward the Z direction. Consequently, the formation of non-erosion areas E2 on the surface 23a of the target 23 can be suppressed in the two magnets 25 located at either end of the magnet unit MU in the X direction, as shown in FIG22 . Specifically, by having auxiliary magnets 27 adjacent to the two magnets 25 located at either end of the magnet unit MU in the X direction, the formation of two diagonally opposite non-erosion areas E2 can be suppressed. As a result, voltage fluctuations are suppressed, and after the formation of the non-erosion regions E1 and E2 is suppressed, it is possible to suppress the formation of the non-erosion region E3 in locations other than the two diagonal locations.

According to the sputtering apparatus 1 of this embodiment, the auxiliary magnet 27 prevents the magnetic flux generated by the magnet 25 at the swinging end of the magnet 25 from being directed toward the anode 28. This reduces the amount of electrons absorbed by the anode 28. Specifically, the magnetic flux generated by the magnet 25 can be directed in the Y direction, or tilted further to the right in Figure 10 relative to the Y direction, that is, tilted further inward of the target contour relative to the target thickness. This reduces the non-erosion areas E1, E2, and E3.

Specifically, by reducing the generation of non-eroded regions E1, E2, and E3, the generation of particles can be suppressed. Specifically, the boundary between the non-eroded and eroded regions becomes less distinct, thereby reducing the formation of erosion-non-erosion boundary regions that can cause particle generation.

Furthermore, by suppressing the generation of non-erosion areas E1 to E3, the supplied power is not redistributed, thereby suppressing partial changes in plasma generation conditions caused by voltage fluctuations, thereby suppressing particle generation and uneven distribution of film thickness and film quality characteristics.

Figure 12 is a graph showing the relationship between the swing position of the magnet 25 and the supply voltage (discharge voltage) from the plasma generation power supply in this embodiment. Here, the magnet unit MU, which includes multiple magnets 25, performs two reciprocating motions (two scans). Specifically, the magnet unit MU starts from the swing end (Forward) shown in Figure 12 and moves to the swing end (Reverse). Then, the magnet unit MU moves in the reverse direction and returns to the swing end (Forward). Furthermore, the magnet unit MU starts from the swing end (Forward) and moves to the swing end (Reverse). Then, the magnet unit MU moves in the reverse direction and returns to the swing end (Forward). Furthermore, in FIG12 , the solid line indicates the case where the auxiliary magnet 27 is installed, and the dotted line indicates the case where the auxiliary magnet 27 is not installed.

As shown in Figure 12, the installation of the auxiliary magnet 27 reduces the amplitude of the discharge voltage fluctuation caused by the swing position compared to the case without the auxiliary magnet 27. Furthermore, as shown in Figure 12, the installation of the auxiliary magnet 27 suppresses the spike fluctuation of the discharge voltage compared to the case without the auxiliary magnet 27.

FIG13 shows the film thickness distribution of a film formed by sputtering under condition 0 using the auxiliary magnet 27 in the sputtering apparatus 1 of this embodiment. FIG14 shows the film resistance (sheet resistance) Rs distribution of a film formed by sputtering under condition 0 using the auxiliary magnet 27 in the sputtering apparatus 1 of this embodiment.

As shown in Figure 13, the installation of auxiliary magnets 27 allows the film thickness distribution to fall within a range of ±4.2% compared to the case without auxiliary magnets 27. As shown in Figure 14, the installation of auxiliary magnets 27 allows the film resistance value Rs distribution to fall within a range of ±12.5% compared to the case without auxiliary magnets 27.

In contrast, Figures 15 to 20 show the sputtering film deposition conditions under three different conditions when no auxiliary magnet 27 is used. Figure 15 shows the film thickness distribution under condition 1. Figure 16 shows the film resistance distribution under condition 1. Figure 17 shows the film thickness distribution under condition 2. Figure 18 shows the film resistance distribution under condition 2. Figure 19 shows the film thickness distribution under condition 3. Figure 20 shows the film resistance distribution under condition 3.

The results for conditions 1-3 show that the film thickness distribution and the film resistance distribution are in a trade-off relationship. As shown in Figure 21, it was previously impossible to achieve a distribution below the inversely proportional line connecting the three conditions. In contrast, under condition 0 (corresponding to Figures 13 and 14), using auxiliary magnets 27, both the film thickness distribution and the film resistance distribution were reduced compared to the case without auxiliary magnets 27.

The following describes the arrangement and dimensions of the auxiliary magnet 27 and the magnet 25.

As shown in Figure 6, the auxiliary magnet 27 and the peripheral magnet portion 32 closest to the auxiliary magnet 27 are arranged. Here, the inclination angle between the Y direction and the magnet inclination line 27D is θ. The distance between the auxiliary magnet 27 and the peripheral magnet portion 32 closest to the auxiliary magnet 27 in the X direction is Wx. The distance between the auxiliary magnet 27 and the magnetic pole plane 30 in the Y direction is Wy.

Here, angle θ represents the tilt angle of the auxiliary magnet 27's north-south pole axis relative to the Y direction. The direction in which the magnetic field lines formed by the north pole approach the nearest peripheral magnet portion 32 is considered positive. In other words, the magnet tilt line 27D extending from the second magnetic pole surface 27S toward the first magnetic pole surface 27F is oriented toward the swinging region SW of the magnet 25. The value of angle θ is varied within a range of 0 degrees to 90 degrees.

The distance Wx is the distance between the auxiliary magnet 27 and the nearest peripheral magnet portion 32 in the X-direction. When the auxiliary magnet 27 is tilted at an angle θ, this distance is the distance from the protrusion 27b protruding in the X-direction from the auxiliary magnet 27 to the peripheral magnet portion 32. The distance Wx ranges from 0 mm to 30 mm.

Distance Wy is the distance in the Y direction between the protrusion 27a, the most prominent part of the auxiliary magnet 27's north pole facing the target 23, and the pole plane 30. A negative value for distance Wy indicates that protrusion 27a is farther from the target 23 than the pole plane 30. Distance Wy ranges from 0 mm to 50 mm.

Figures 23 to 26 show the plasma density on the surface 23a of the target 23 near the anode 28 when the arrangement of the magnet 25 and the auxiliary magnet 27 of this embodiment is changed. Here, Figures 23 to 26 show the symbols "×", "△", "0", and "◎". The plasma density represented by these symbols increases in sequence. That is, the symbol "×" indicates the lowest plasma density. The symbol "◎" indicates the highest plasma density, which is equal to the plasma density at a position away from the anode 28. The symbol "0" indicates approximately 80% of the plasma density of the symbol "◎". The symbol "△" indicates less than 50% of the plasma density of the symbol "◎".

The results shown in Figures 23 to 26 show that the plasma density remains unchanged when the angle θ is 90 degrees. Furthermore, it can be seen that the angle θ, the distance Wx, and the distance Wy are not independent parameters. Regarding the angle θ, the distance Wx, and the distance Wy, it can be seen that if the slope of the angle θ, the distance Wx, and the distance Wy is such that the magnetic flux of the closest peripheral magnet portion 32 is pressed toward the inside of the swing region, then the optimal range of values cannot be determined solely by, for example, the distance Wx.

Specifically, the following optimal ranges can be set: θ = 0 degrees, -10 mm ≤ Wy ≤ 10 mm, 0 mm ≤ Wx ≤ 20 mm, θ = 30 degrees, -10 mm ≤ Wy ≤ 10 mm, 0 mm ≤ Wx ≤ 30 mm, θ = 60 degrees, 0 mm ≤ Wy ≤ 10 mm, 20 mm ≤ Wx ≤ 30 mm.

Furthermore, (θ[deg], Wx[mm], Wy[mm]) can also be set to a range formed by connecting the points of (0, 0, -10)(0, 0, 0)(0, 0, 10)(0, 10, 0)(30, 0, -10)(30, 0, 0)(30, 0, 10)(30, 10, 0)(30, 10, 10)(30, 20, 0)(30, 20, 10)(30, 30, 10)(60, 30, 0)

<Variations of Magnetic Field Generating Regions MG1, MG2, and MG3> In the above embodiment, a configuration was described in which the multiple magnetic field generating regions MG1, MG2, and MG3 constituting each of the nine magnets 25 are connected continuously in the Z direction. In this variation, a configuration is described in which the multiple magnetic field generating regions MG1, MG2, and MG3 are divided in the Z direction. In this divided configuration, for example, the multiple magnetic field generating regions MG1, MG2, and MG3 may be divided individually. Alternatively, a unit region may be formed of two, three, or four magnetic field generating regions, and the multiple unit regions may be divided into separate units.

In each of the second through eighth magnets 25S through 25E, the plurality of magnetic field generating regions MG1, MG2, and MG3 each comprise a split magnetic yoke, a split peripheral magnetic portion, and a split central magnetic portion. Furthermore, in each of the first and ninth magnets 25F and 25N, the plurality of magnetic field generating regions MG1, MG2, and MG3 each comprise a split magnetic yoke, a split peripheral magnetic portion, a split central magnetic portion, and a split auxiliary magnet. Here, the split magnetic yoke corresponds to the aforementioned magnetic yoke 31. The split peripheral magnetic portion corresponds to the aforementioned peripheral magnetic portion 32. The split central magnetic portion corresponds to the aforementioned central magnetic portion 33. The split auxiliary magnet corresponds to the aforementioned auxiliary magnet 27.

The positions of the plurality of magnetic field generating regions MG1, MG2, and MG3 of each of the nine magnets 25 can be adjusted in the Z and Y directions. The magnet 25 having the plurality of magnetic field generating regions MG1, MG2, and MG3 with adjusted positions can be swung by the magnet scanning unit 29.

To control the film formation conditions across the entire film formation area, for example, the magnetic flux density conditions associated with plasma generation may need to be adjusted in the Z and Y directions. According to this variation, the multiple magnetic field generating regions MG1, MG2, and MG3 are divided, enabling adjustment of the positions of the multiple magnetic field generating regions MG1, MG2, and MG3 in the Z and Y directions. Consequently, the magnetic flux density conditions can be adjusted within each of the multiple magnetic field generating regions MG1, MG2, and MG3. By adjusting each of the multiple magnetic field generating regions MG1, MG2, and MG3 in the Z and Y directions, the magnetic flux lines of the peripheral magnetic poles of the magnet 25 located at the first oscillating end can be tilted in the desired direction within each of the multiple magnetic field generating regions using the divided auxiliary magnets. In each of the plurality of magnetic field generating regions MG1, MG2, and MG3, it is possible to maintain a state in which the magnetic field lines are tilted in a desired direction. [Example]

Hereinafter, embodiments of the present invention will be described.

Here, a verification test conducted as a specific example of film formation using sputter plating according to the present invention is described. The non-etched areas of the target 23 were verified, and the film thickness distribution and sheet resistance distribution were measured.

Experimental Example 1 Using the sputtering apparatus 1 with the auxiliary magnet 27 shown in the embodiment, the swing amplitude was set to 82.5 mm from the center. Specifically, half of the swing distance in the X direction from the swing end (Revers) to the swing end (Forward) was 82.5 mm.

The film deposition parameters are shown here. Condition 0 Target composition: ITO (Indium Tin Oxide) Substrate dimensions (X x Z): 1500 mm x 1800 mm Film composition: ITO Film thickness: 80 nm Power supply (plasma formation power): 15 kW Bias power: Not used Supply gas and gas flow rate: Ar 120 sccm Atmosphere pressure: 0.2 Pa Film deposition time: 53 sec

Auxiliary magnet 27 width in the X direction (pole surface width): 185 mm Angle θ: 30° Wx: 17 mm Wy: 20 mm Auxiliary magnet yoke 31d: SUS430 As shown in Figures 13, 14, and 21, film formation characteristics with a film thickness distribution within 4.2% and a sheet resistance distribution within 12.5% were achieved.

<Experimental Examples 2-4> ITO films were deposited in the same manner, but without using auxiliary magnet 27. Condition 1 Target composition: ITO Substrate dimensions (X-axis x Z-axis): 1500 mm x 1800 mm Film composition: ITO Film thickness: 80 nm Power supply (plasma formation power): 30 kW Bias power: Not used Supply gas and gas flow rate: Ar 120 sccm Atmosphere pressure: 0.2 Pa Film deposition time: 65 sec

As a result, under condition 1, as shown in Figures 15, 16, and 21, film formation characteristics with a film thickness distribution of 7.9% and a sheet resistance distribution of 11.5% were achieved.

Condition 2 Target composition: ITO Substrate size (X direction × Z direction): 1500 mm × 1800 mm Film composition: ITO Film thickness: 80 nm Supply power (plasma formation power): 30 kW Bias power: Not used Supply gas and gas flow rate: _H2O 0.5 sccm, Ar 120 sccm Atmosphere pressure: 0.5 Pa Film formation time: 74 sec

As a result, under condition 2, as shown in Figures 17, 18, and 21, film formation characteristics with a film thickness distribution of 5.5% and a sheet resistance distribution of 21.3% were achieved.

Condition 3 Target composition: ITO Substrate size (X direction × Z direction): 1500 mm × 1800 mm Film composition: ITO Film thickness: 80 nm Supply power (plasma formation power): 60 kW Bias power: Not used Supply gas and gas flow rate: _H2O 0.5 sccm, Ar 360 sccm Atmosphere pressure: 0.3 Pa Film formation time: 86 sec

As a result, under condition 3, as shown in Figures 19, 20, and 21, film formation characteristics with a film thickness distribution of 4.2% and a sheet resistance distribution of 26.6% were obtained.

Experimental Example 5 Sputter plating was performed without auxiliary magnet 27, and the target surface was visually observed. Target composition: Aluminum Substrate dimensions (X-direction × Z-direction): 1500 mm × 1800 mm

As a result, the dimensions of the non-eroded area E1 (shown in Figure 7) were measured to be 11 mm, 17 mm, 8 mm, and 11 mm, respectively. The dimensions of the non-eroded area E2 (shown in Figure 7) were measured to be 19 mm and 20 mm, respectively. The dimensions of the non-eroded area E3 (shown in Figure 7) were measured to be 10 mm, 5 mm, 8 mm, and 10 mm, respectively. Also, the boundary area was observed and its dimensions were measured to be 15 mm, respectively.

<Experimental Example 6> Sputter plating was performed using auxiliary magnet 27, and the target surface was visually observed. Target composition: Aluminum Substrate dimensions (X direction × Z direction): 1500 mm × 1800 mm

Auxiliary magnet 27 width in the X direction (width of the magnetic pole surface): 185 mm Angle θ: 30° Wx: 17 mm Wy: 20 mm Auxiliary magnet yoke 31d: SUS430 As a result, the dimension of the non-eroded area E1 shown in Figure 22 was 22 mm. However, no boundary area was observed.

<Experimental Example 7> Using auxiliary magnet 27, the plasma density was measured by varying (θ [deg], Wx [mm], Wy [mm]) as shown in Figures 23 to 26. The results are shown in Figures 23 to 26. As described above, it was determined that angle θ, distance Wx, and distance Wy must satisfy a specific relationship.

Furthermore, in Experimental Example 6, which used an auxiliary magnet 27, the surface of the target 23 was examined after the sputtering process. An image of the corner at this time is shown in Figure 28. The results show that the boundary between the non-etched area and the target 23 is clear and not blurred. During the process, the plasma did not disappear in the non-etched area, and no boundary area was observed.

Similarly, in Experimental Example 5, which did not use the auxiliary magnet 27, the surface of the target 23 was examined after the sputtering process. An image of the corner at this time is shown in Figure 29. The results show that the boundary between the non-etched area and the target 23 is blurred, and the plasma disappears in the non-etched area during the process, allowing the boundary area to be observed.

These results indicate that by using the auxiliary magnet 27 to press the magnetic lines away from the anode 28, the boundary area between the eroded and non-eroded regions is reduced, thereby reducing particles and improving the film thickness distribution and sheet resistance distribution.

1: Sputtering device 2: Loading/unloading chamber (vacuum chamber) 2a: Loading/unloading chamber (vacuum chamber) 3: Transfer chamber 3a: Transfer device (transfer robot) 4: Film deposition chamber (vacuum chamber) 4A: Film deposition chamber (vacuum chamber) 4a: Transfer port 4b: Film deposition port 10: Cathode device 10A: Cathode cassette 11: Glass substrate (film deposition substrate, transparent substrate) 13: Substrate holder 22: Cathode unit 23: Target 23a: Surface 24: Backing plate 25: Magnet (magnetic circuit) 25E: 8th magnet 25F: 1st magnet 25G: 5th magnet 25N: 9th magnet 25R: 6th magnet 25S: 2nd magnet 25T: 3rd magnet 25V: 7th magnet 25Y: 4th magnet 26: Control unit 27: Auxiliary magnet 27a: Rib 27b: Rib 27D: Magnet tilt line 27F: 1st magnetic pole surface 27g: Fixing member 27Q: Center position 27R: Center position 27S: 2nd magnetic pole surface 28: Anode 29: Magnetic scanning section 30: End surface (magnetic pole plane) 31: Magnetic yoke 31C: Center area 31CP: Center position 31d: Auxiliary magnetic yoke 31S: Surface 32: Peripheral magnet section 32a: End peripheral magnet section 32b: First peripheral magnet section 32c: Second peripheral magnet section 32d: Third peripheral magnet section 32e: Fourth peripheral magnet section 32f: Fifth peripheral magnet section 33: Central magnet section 33a: End magnet section 33b: First coil section 34b: First core section 34c: Second core section 34d: Third core section 34e: Fourth core section 35b: First coil section 35c: Second coil section 35d: Third coil section 35e: Fourth coil section 36: Long core section 37: Fifth magnet section 41: Front space 42: Back space C1: 1st corner C2: 2nd corner C3: 3rd corner C4: 4th corner Center: Center E1: Non-erosion area E2: Non-erosion area E3: Non-erosion area Forward: Swinging end MG1: 1st magnetic field generating area MG2: 2nd magnetic field generating area MG3: 3rd magnetic field generating area MU: Magnet unit (magnetic circuit) PR: Parallel region Revers: Swinging end SP: Space

Figure 1 is a schematic top view of a sputtering apparatus according to an embodiment of the present invention. Figure 2 is a perspective view of a cathode unit in the sputtering apparatus according to an embodiment of the present invention. Figure 3 is a schematic diagram illustrating the positional relationship between a glass substrate and the cathode unit in the sputtering apparatus according to an embodiment of the present invention. Figure 4 is a front view illustrating the positional relationship between a glass substrate, a target, and a magnet unit in the sputtering apparatus according to an embodiment of the present invention. Figure 5 is a diagram illustrating an end portion of a magnet unit in the sputtering apparatus according to an embodiment of the present invention and is an enlarged front view illustrating the configuration of the magnets and auxiliary magnets that constitute the magnet unit. Figure 6 shows an end portion of a magnet unit in a sputter plating apparatus according to an embodiment of the present invention and is an enlarged cross-sectional view illustrating the structure of the magnet and auxiliary magnets that constitute the magnet unit. Figure 7 schematically illustrates the non-etched area, etched area, and boundary area in a target in a sputter plating apparatus according to an embodiment of the present invention. Figure 8 schematically illustrates the electron tracking state in a sputter plating apparatus according to an embodiment of the present invention without an auxiliary magnet. Figure 9 schematically illustrates the direction of magnetic field lines in a sputter plating apparatus according to an embodiment of the present invention without an auxiliary magnet. Figure 10 schematically illustrates the electron tracking state in a sputter plating apparatus according to an embodiment of the present invention. Figure 11 is a schematic diagram showing the direction of magnetic field lines in a sputtering apparatus according to an embodiment of the present invention. Figure 12 is a graph showing the change in voltage corresponding to the swing position in a sputtering apparatus according to an embodiment of the present invention. Figure 13 is a graph showing an example of the thickness distribution of a film formed by a sputtering apparatus according to an embodiment of the present invention. Figure 14 is a graph showing an example of the resistance distribution of a film formed by a sputtering apparatus according to an embodiment of the present invention. Figure 15 is a graph showing an example of the thickness distribution of a film formed by a sputtering apparatus. Figure 16 is a graph showing an example of the resistance distribution of a film formed by a sputtering apparatus. Figure 17 is a graph showing an example of the film thickness distribution formed by a sputtering apparatus. Figure 18 is a graph showing an example of the film resistance distribution formed by a sputtering apparatus. Figure 19 is a graph showing an example of the film thickness distribution formed by a sputtering apparatus. Figure 20 is a graph showing an example of the film resistance distribution formed by a sputtering apparatus. Figure 21 is a graph showing the relationship between the film thickness distribution and the film resistance distribution in the sputtering apparatus of the present invention. Figure 22 is an image of the target surface after treatment using an auxiliary magnet in the sputtering apparatus of the present invention. Figure 23 is a diagram showing the relationship between the arrangement of auxiliary magnets and plasma density in the sputtering apparatus of the present invention. Figure 24 is a diagram showing the relationship between the arrangement of auxiliary magnets and plasma density in the sputtering apparatus of the present invention. Figure 25 is a diagram showing the relationship between the arrangement of auxiliary magnets and plasma density in the sputtering apparatus of the present invention. Figure 26 is a diagram showing the relationship between the arrangement of auxiliary magnets and plasma density in the sputtering apparatus of the present invention. Figure 27 is an enlarged cross-sectional view showing a variation of the auxiliary magnets in the sputtering apparatus of the present invention. Figure 28 shows an image of the surface of a target corner after treatment using an auxiliary magnet in the sputter plating apparatus of the present invention. Figure 29 shows an image of the surface of a target corner after treatment using an auxiliary magnet in the sputter plating apparatus of the present invention.

1: Sputtering device

2: Loading/unloading chamber (vacuum chamber)

2a: Loading/unloading chamber (vacuum chamber)

3:Transportation room

3a: Transport device (transport robot)

4: Film Forming Chamber (Vacuum Chamber)

4A: Film Forming Room (Vacuum Chamber)

4a:Transport port

4b: Film-forming port

10: Cathode device

11: Glass substrate (film-forming substrate, transparent substrate)

13: Substrate holding unit

41:Front space

42: Dorsal space

Claims (9)

A sputtering device is provided with a cathode unit for emitting sputtering particles toward a processed surface of a film-forming substrate, wherein the cathode unit comprises: a target having a non-etching area and an etched area; a magnet unit having a plurality of magnets, the plurality of magnets being arranged on a side opposite to the film-forming substrate relative to the target so that the etched area is formed on the target; and a magnet scanning unit capable of moving the magnet unit and the film-forming substrate together. The film-forming substrate reciprocates relatively between the first swing end and the second swing end along the swing direction of the processed surface of the film-forming substrate; the auxiliary magnet, along the magnet located at the first swing end among the plurality of magnets, tilts the magnetic field lines formed by the magnet located at the first swing end toward the second swing end, and the plurality of magnets along the processed surface of the film-forming substrate The processing surface extends in a direction intersecting the above-mentioned swinging direction; a flat magnetic yoke having a central area containing a magnetic body on its surface; and an auxiliary magnetic yoke fixed in a manner of contacting the side surface of the above-mentioned magnetic yoke located at the above-mentioned first swinging end; and each of the above-mentioned multiple magnets constituting the above-mentioned magnetic unit is arranged on the above-mentioned magnetic yoke, the above-mentioned auxiliary magnet is fixed to the above-mentioned auxiliary magnetic yoke, and the above-mentioned auxiliary magnet is not affected by the above-mentioned magnetic body. The swing position of the magnet during the relative reciprocating motion between the unit and the film-forming substrate is affected, thereby maintaining the slope of the magnetic field lines of the magnet constant. The sputtering device reduces the formation of an etched-non-etched boundary region in which the boundary between the non-etched region and the etched region becomes unclear, inhibits re-sputtering of the re-deposited film, and inhibits changes in plasma density caused by the swing position of the magnet. The sputtering device of claim 1, wherein the auxiliary magnet is arranged along the magnet located at the first swing end on the side opposite to the second swing end relative to the first swing end, and the auxiliary magnet can swing integrally with the magnet. The sputtering device of claim 2, wherein the auxiliary magnet has the same polarity as the magnet located at the first swing end. A sputtering device as claimed in claim 3, wherein the magnetic strength of the auxiliary magnet is equal to or less than the magnetic strength of the magnet located at the first swing end. A sputtering device as claimed in claim 4, wherein the auxiliary magnet has a protrusion protruding along the magnet toward the target. The sputtering apparatus of claim 5, wherein the auxiliary magnet is arranged on the opposite side of the substrate to be processed relative to the target, and is mounted and fixed on a magnetic yoke forming a magnetic circuit. A sputtering device as claimed in any one of claims 1 to 6, wherein the cathode unit comprises: a central magnetic portion arranged in a straight line in the central region of the magnetic yoke; a peripheral magnetic portion arranged along the periphery of the central magnetic portion so as to surround the central magnetic portion; a parallel region in which the central magnetic portion and the peripheral magnetic portion are parallel to each other; a magnetic circuit arranged on the surface of the magnetic yoke; and a backing plate arranged to overlap with the magnetic circuit; and the auxiliary magnet is arranged parallel to the peripheral magnetic portion, the auxiliary magnet is fixed to the magnetic yoke via the auxiliary magnetic yoke, and the auxiliary magnetic yoke comprises a magnetic body or a dielectric body. The sputtering device of claim 7, wherein the auxiliary magnetic yoke and the auxiliary magnet are capable of being removed from the magnetic yoke. A sputtering device as claimed in claim 8, wherein the magnet located at the first swing end among the plurality of magnets has a plurality of magnetic field generating areas divided in the cross direction, each of the magnetic field generating areas has a divided magnetic yoke, a divided peripheral magnet portion, a divided central magnet portion and a divided auxiliary magnet, and the position of each of the magnetic field generating areas can be adjusted in the cross direction and the thickness direction of the magnetic yoke, and the magnet having the plurality of magnetic field generating areas with adjusted positions can be swung by the magnet scanning portion.