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GB933176A - Improvements relating to the growth of single crystals - Google Patents

Improvements relating to the growth of single crystals

Info

Publication number
GB933176A
GB933176A GB22053/61A GB2205361A GB933176A GB 933176 A GB933176 A GB 933176A GB 22053/61 A GB22053/61 A GB 22053/61A GB 2205361 A GB2205361 A GB 2205361A GB 933176 A GB933176 A GB 933176A
Authority
GB
United Kingdom
Prior art keywords
molten zone
clamps
current
growth
combined
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22053/61A
Inventor
Denys Bromley Gasson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB22053/61A priority Critical patent/GB933176A/en
Publication of GB933176A publication Critical patent/GB933176A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

<PICT:0933176/III/1> A dendritic crystal is pulled, by the use of a seed crystal 6, from a supercooled region of a molten zone 4 in a horizontal rod 1 of silicon supported by clamps 2 which are moved together as pulling proceeds. The molten zone is suspended by the passage of a current therethrough combined with the application of a horizontal magnetic field, produced by an electromagnet 3, normal to the current path. The molten zone and the supercooled region may be formed by the heating effect of the current combined with extraction of heat from the clamps 2, or (as shown) by two induction coils 5 of variable power and position.
GB22053/61A 1961-06-19 1961-06-19 Improvements relating to the growth of single crystals Expired GB933176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB22053/61A GB933176A (en) 1961-06-19 1961-06-19 Improvements relating to the growth of single crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB22053/61A GB933176A (en) 1961-06-19 1961-06-19 Improvements relating to the growth of single crystals

Publications (1)

Publication Number Publication Date
GB933176A true GB933176A (en) 1963-08-08

Family

ID=10173136

Family Applications (1)

Application Number Title Priority Date Filing Date
GB22053/61A Expired GB933176A (en) 1961-06-19 1961-06-19 Improvements relating to the growth of single crystals

Country Status (1)

Country Link
GB (1) GB933176A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3494745A (en) * 1967-04-06 1970-02-10 Corning Glass Works Method of growing single crystal in a horizontally disposed rod

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3494745A (en) * 1967-04-06 1970-02-10 Corning Glass Works Method of growing single crystal in a horizontally disposed rod

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