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GB1300726A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1300726A
GB1300726A GB03482/70A GB1348270A GB1300726A GB 1300726 A GB1300726 A GB 1300726A GB 03482/70 A GB03482/70 A GB 03482/70A GB 1348270 A GB1348270 A GB 1348270A GB 1300726 A GB1300726 A GB 1300726A
Authority
GB
United Kingdom
Prior art keywords
region
conductivity type
regions
march
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB03482/70A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1300726A publication Critical patent/GB1300726A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/50—
    • H10W10/031—
    • H10W10/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

1300726 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 20 March 1970 [25 March 1969] 13482/70 Heading H1K A semi-conductor device comprises a body 3 of one conductivity type, a surface region 4 of the opposite conductivity type, a further region 15 of the opposite conductivity type extending laterally around the region 4, and an annular channel-interrupting surface portion 18 situated beside the region 15 and between it and the surface region 4. The portion 18 may be a heavily doped region of the one conductivity type, and may adjoin the further region 15 as in Fig. 1, or may partially overlap the region 15 as in Fig. 2 (not shown) wherein the outer circumference of the region 18 lies between the inner and outer circumferences of the regions 15. In addition there may be more than one arrangement of further regions and associated channel-interrupting surface portions as in Fig. 4 (not shown). A further surface region 22, of the one conductivity type may surround the further region(s), and in one embodiment; Fig. 5 (not shown) a metal layer (21), e.g. of aluminium may be deposited on an insulating layer 6, e.g. of silicon oxide or nitride on the body 3 so as to overlie the region(s) 15 and 18 and also be contacted to the region (22). The device may be a transistor, for which purpose an emitter 9 may be formed, and this and the base region 4 may be interdigitated. The body may be of silicon, germanium or a III-V compound, and may have boron and phosphorus dopants. In an alternative diode embdoiment, Fig. 3 (not shown), the portion 18 may be formed by a part of the body 3 lying below an annular gap in the insulating layer 6, the gap lying between the regions 4 and 15. The arrangements are stated to increase reverse breakdown voltage between region 4 and body 3. Specification 1,299,804 is referred to.
GB03482/70A 1969-03-25 1970-03-20 Semiconductor devices Expired GB1300726A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6904543A NL6904543A (en) 1969-03-25 1969-03-25

Publications (1)

Publication Number Publication Date
GB1300726A true GB1300726A (en) 1972-12-20

Family

ID=19806513

Family Applications (1)

Application Number Title Priority Date Filing Date
GB03482/70A Expired GB1300726A (en) 1969-03-25 1970-03-20 Semiconductor devices

Country Status (9)

Country Link
BE (1) BE747892A (en)
BR (1) BR7017682D0 (en)
CH (1) CH504102A (en)
DE (1) DE2012945C3 (en)
ES (1) ES377825A1 (en)
FR (1) FR2037251B1 (en)
GB (1) GB1300726A (en)
NL (1) NL6904543A (en)
SE (1) SE349425B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0631320A1 (en) * 1993-06-28 1994-12-28 Motorola, Inc. High voltage semiconductor structure

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2108781B1 (en) * 1970-10-05 1974-10-31 Radiotechnique Compelec
JPS573225B2 (en) * 1974-08-19 1982-01-20
IN144541B (en) * 1975-06-11 1978-05-13 Rca Corp
DE2846637A1 (en) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie SEMICONDUCTOR COMPONENT WITH AT LEAST ONE PLANAR PN JUNCTION AND ZONE GUARD RINGS

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA667423A (en) * 1963-07-23 Northern Electric Company Limited Semiconductor device and method of manufacture
NL282779A (en) * 1961-09-08
FR1337348A (en) * 1961-09-08 1963-09-13 Pacific Semiconductors Coupling transistors
FR1417163A (en) * 1963-08-27 1965-11-12 Ibm Semiconductor devices and their manufacture
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes
FR1459892A (en) * 1964-08-20 1966-06-17 Texas Instruments Inc Semiconductor devices
FR1475201A (en) * 1965-04-07 1967-03-31 Itt Flat semiconductor device
DE1273700B (en) * 1965-04-07 1968-07-25 Itt Ind Ges Mit Beschraenkter Semiconductor component
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0631320A1 (en) * 1993-06-28 1994-12-28 Motorola, Inc. High voltage semiconductor structure

Also Published As

Publication number Publication date
BR7017682D0 (en) 1973-04-17
ES377825A1 (en) 1972-05-16
DE2012945B2 (en) 1977-12-29
CH504102A (en) 1971-02-28
BE747892A (en) 1970-09-24
DE2012945C3 (en) 1985-01-31
DE2012945A1 (en) 1970-10-08
FR2037251A1 (en) 1970-12-31
FR2037251B1 (en) 1974-09-20
NL6904543A (en) 1970-09-29
SE349425B (en) 1972-09-25

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee