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CH504102A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
CH504102A
CH504102A CH428170A CH428170A CH504102A CH 504102 A CH504102 A CH 504102A CH 428170 A CH428170 A CH 428170A CH 428170 A CH428170 A CH 428170A CH 504102 A CH504102 A CH 504102A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
CH428170A
Other languages
German (de)
Inventor
Albertus Bosselaar Cornelis
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH504102A publication Critical patent/CH504102A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/40Vertical BJTs
    • H10D10/421Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/411PN diodes having planar bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P95/50
    • H10W10/031
    • H10W10/30
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
CH428170A 1969-03-25 1970-03-20 Semiconductor device CH504102A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6904543A NL6904543A (en) 1969-03-25 1969-03-25

Publications (1)

Publication Number Publication Date
CH504102A true CH504102A (en) 1971-02-28

Family

ID=19806513

Family Applications (1)

Application Number Title Priority Date Filing Date
CH428170A CH504102A (en) 1969-03-25 1970-03-20 Semiconductor device

Country Status (9)

Country Link
BE (1) BE747892A (en)
BR (1) BR7017682D0 (en)
CH (1) CH504102A (en)
DE (1) DE2012945C3 (en)
ES (1) ES377825A1 (en)
FR (1) FR2037251B1 (en)
GB (1) GB1300726A (en)
NL (1) NL6904543A (en)
SE (1) SE349425B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2108781B1 (en) * 1970-10-05 1974-10-31 Radiotechnique Compelec
JPS573225B2 (en) * 1974-08-19 1982-01-20
IN144541B (en) * 1975-06-11 1978-05-13 Rca Corp
DE2846637A1 (en) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie SEMICONDUCTOR COMPONENT WITH AT LEAST ONE PLANAR PN JUNCTION AND ZONE GUARD RINGS
US5345101A (en) * 1993-06-28 1994-09-06 Motorola, Inc. High voltage semiconductor structure and method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA667423A (en) * 1963-07-23 Northern Electric Company Limited Semiconductor device and method of manufacture
NL282779A (en) * 1961-09-08
FR1337348A (en) * 1961-09-08 1963-09-13 Pacific Semiconductors Coupling transistors
FR1417163A (en) * 1963-08-27 1965-11-12 Ibm Semiconductor devices and their manufacture
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes
FR1459892A (en) * 1964-08-20 1966-06-17 Texas Instruments Inc Semiconductor devices
FR1475201A (en) * 1965-04-07 1967-03-31 Itt Flat semiconductor device
DE1273700B (en) * 1965-04-07 1968-07-25 Itt Ind Ges Mit Beschraenkter Semiconductor component
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices

Also Published As

Publication number Publication date
BR7017682D0 (en) 1973-04-17
ES377825A1 (en) 1972-05-16
DE2012945B2 (en) 1977-12-29
BE747892A (en) 1970-09-24
DE2012945C3 (en) 1985-01-31
DE2012945A1 (en) 1970-10-08
FR2037251A1 (en) 1970-12-31
FR2037251B1 (en) 1974-09-20
NL6904543A (en) 1970-09-29
GB1300726A (en) 1972-12-20
SE349425B (en) 1972-09-25

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Legal Events

Date Code Title Description
PL Patent ceased