GB1076371A - Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junction - Google Patents
Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junctionInfo
- Publication number
- GB1076371A GB1076371A GB1233/65A GB123365A GB1076371A GB 1076371 A GB1076371 A GB 1076371A GB 1233/65 A GB1233/65 A GB 1233/65A GB 123365 A GB123365 A GB 123365A GB 1076371 A GB1076371 A GB 1076371A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- junction
- regions
- breakdown voltage
- surface region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W74/43—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
- Rectifiers (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,076,371. Semi-conductor devices. MOTOROLA Inc. Jan. 11, 1965 [Jan. 27, 1964], No. 1233/65. Heading H1K. The avalanche breakdown voltage of a PN junction between a surface region and an underlying region of a semi-conductor body is increased by surrounding the surface region with a further region or regions of the same conductivity type spaced from but within the space charge region of the junction at its breakdown voltage. In a typical diode device the surface region is circular and the further region or regions annular and concentric or eccentric with respect to it and preferably formed in the same diffusion process through oxide masking. This subsequently functions as a passivating layer. Alternatively the region is square or rectangular and the further regions square or rectangular frames. A planar transistor is made on a high resistivity layer epitaxially grown on a heavily doped collector substrate in the same way by diffusion, the emitter region being formed within the surface region in a further diffusion step. In operation the further regions, which may also be formed by alloying or epitaxial deposition, are left floating.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32332363A | 1963-11-13 | 1963-11-13 | |
| US34044764A | 1964-01-27 | 1964-01-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1076371A true GB1076371A (en) | 1967-07-19 |
Family
ID=26983893
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB43129/64A Expired GB1030050A (en) | 1963-11-13 | 1964-10-22 | Punchthrough breakdown rectifier |
| GB1233/65A Expired GB1076371A (en) | 1963-11-13 | 1965-01-11 | Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junction |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB43129/64A Expired GB1030050A (en) | 1963-11-13 | 1964-10-22 | Punchthrough breakdown rectifier |
Country Status (6)
| Country | Link |
|---|---|
| BE (2) | BE655472A (en) |
| CH (2) | CH419355A (en) |
| DE (1) | DE1514187A1 (en) |
| FR (1) | FR1421136A (en) |
| GB (2) | GB1030050A (en) |
| NL (2) | NL6412823A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3721001A1 (en) * | 1987-06-25 | 1989-01-05 | Bosch Gmbh Robert | HIGHLY LOCKING SEMICONDUCTOR COMPONENT |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1789195C2 (en) * | 1967-06-19 | 1983-03-17 | Robert Bosch Gmbh, 7000 Stuttgart | Planar transistor |
| DE1589529C3 (en) * | 1967-06-19 | 1982-10-14 | Robert Bosch Gmbh, 7000 Stuttgart | Planar transistor |
| NL6904543A (en) * | 1969-03-25 | 1970-09-29 | ||
| NL161923C (en) * | 1969-04-18 | 1980-03-17 | Philips Nv | SEMICONDUCTOR DEVICE. |
| US3727116A (en) * | 1970-05-05 | 1973-04-10 | Rca Corp | Integral thyristor-rectifier device |
| JPS5320194B2 (en) * | 1972-04-20 | 1978-06-24 | ||
| IT1212767B (en) * | 1983-07-29 | 1989-11-30 | Ates Componenti Elettron | SEMICONDUCTOR OVERVOLTAGE SUPPRESSOR WITH PREDETINABLE IGNITION VOLTAGE WITH PRECISION. |
-
1964
- 1964-10-22 GB GB43129/64A patent/GB1030050A/en not_active Expired
- 1964-11-04 NL NL6412823A patent/NL6412823A/xx unknown
- 1964-11-09 BE BE655472D patent/BE655472A/xx unknown
- 1964-11-10 CH CH1449464A patent/CH419355A/en unknown
-
1965
- 1965-01-11 GB GB1233/65A patent/GB1076371A/en not_active Expired
- 1965-01-20 FR FR2552A patent/FR1421136A/en not_active Expired
- 1965-01-21 BE BE658633D patent/BE658633A/xx unknown
- 1965-01-22 CH CH93765A patent/CH423000A/en unknown
- 1965-01-26 DE DE19651514187 patent/DE1514187A1/en active Pending
- 1965-01-27 NL NL6501004A patent/NL6501004A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3721001A1 (en) * | 1987-06-25 | 1989-01-05 | Bosch Gmbh Robert | HIGHLY LOCKING SEMICONDUCTOR COMPONENT |
Also Published As
| Publication number | Publication date |
|---|---|
| CH419355A (en) | 1966-08-31 |
| CH423000A (en) | 1966-10-31 |
| GB1030050A (en) | 1966-05-18 |
| NL6501004A (en) | 1965-07-28 |
| NL6412823A (en) | 1965-05-14 |
| DE1514187A1 (en) | 1969-05-14 |
| BE655472A (en) | 1965-03-01 |
| BE658633A (en) | 1965-05-17 |
| FR1421136A (en) | 1965-12-10 |
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