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GB1480050A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1480050A
GB1480050A GB45075/74A GB4507574A GB1480050A GB 1480050 A GB1480050 A GB 1480050A GB 45075/74 A GB45075/74 A GB 45075/74A GB 4507574 A GB4507574 A GB 4507574A GB 1480050 A GB1480050 A GB 1480050A
Authority
GB
United Kingdom
Prior art keywords
base
collector
low resistivity
thick
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB45075/74A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1480050A publication Critical patent/GB1480050A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1480050 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 17 Oct 1974 [20 Oct 1973] 45075/74 Heading H1K A semi-conductor device includes a transistor in which the collector has high and low resistivity portions 13, 17 and the base has thick and thin portions 24b, 24a, the high resistivity collector part 13 extending at least partly between the base and the low resistivity collector part 17 which extends across the whole base area. The thick base part 24b entirely surrounds the thin part 24a at the surface and extends down to at least the low resistivity collector part 17. As shown, the transistor forms part of an I.C. in which isolation zones 15 separates one island 13 from an adjacent island 14 in which is formed a conventional transistor. The base contact 28 overlies only the thick base part 24b and the base is surrounded at the surface by a further low resistivity part 26 of the collector 13. The emitter 23 covers the whole of the thin base part area 24a. In another arrangement, the further low resistivity part (5c, Fig. 2, not shown) of the collector extends from the surface only partly through the high resistivity portion (5b) and does not connect with the main low resistivity portion (5a).
GB45075/74A 1973-10-20 1974-10-17 Semiconductor device Expired GB1480050A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7314466A NL7314466A (en) 1973-10-20 1973-10-20 SEMI-GUIDE DEVICE.

Publications (1)

Publication Number Publication Date
GB1480050A true GB1480050A (en) 1977-07-20

Family

ID=19819856

Family Applications (1)

Application Number Title Priority Date Filing Date
GB45075/74A Expired GB1480050A (en) 1973-10-20 1974-10-17 Semiconductor device

Country Status (6)

Country Link
JP (1) JPS5513427B2 (en)
CH (1) CH573664A5 (en)
DE (1) DE2447867A1 (en)
FR (1) FR2248615B1 (en)
GB (1) GB1480050A (en)
NL (1) NL7314466A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004040643A1 (en) * 2002-10-28 2004-05-13 Infineon Technologies Ag Method for producing a transistor structure

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4199775A (en) * 1974-09-03 1980-04-22 Bell Telephone Laboratories, Incorporated Integrated circuit and method for fabrication thereof
DE2805008A1 (en) * 1978-02-06 1979-08-09 Siemens Ag HF transistor with strip shaped emitter zone - has collector doping in strips or grid to reduce collector-base capacitance
DE10044838C2 (en) * 2000-09-11 2002-08-08 Infineon Technologies Ag Semiconductor component and method for producing such
RU2677123C1 (en) 2015-01-26 2019-01-15 Ниппон Стил Энд Сумитомо Метал Корпорейшн Surface shape defect formation areas evaluation method, surface shape defect sources areas evaluation method, surface shape defect formation areas evaluation device, surface shape defect sources areas evaluation device, program and recording medium

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004040643A1 (en) * 2002-10-28 2004-05-13 Infineon Technologies Ag Method for producing a transistor structure
KR100725618B1 (en) * 2002-10-28 2007-06-07 인피네온 테크놀로지스 아게 How to fabricate a transistor structure
CN1331213C (en) * 2002-10-28 2007-08-08 因芬尼昂技术股份公司 Method for producing a transistor structure
US7371650B2 (en) 2002-10-28 2008-05-13 Infineon Technologies Ag Method for producing a transistor structure
SG155055A1 (en) * 2002-10-28 2009-09-30 Infineon Technologies Ag Method for producing a transistor structure

Also Published As

Publication number Publication date
JPS5068783A (en) 1975-06-09
FR2248615A1 (en) 1975-05-16
FR2248615B1 (en) 1979-02-16
JPS5513427B2 (en) 1980-04-09
DE2447867A1 (en) 1975-04-30
CH573664A5 (en) 1976-03-15
NL7314466A (en) 1975-04-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee