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GB2019645A - Semiconductor device protected against overvoltages - Google Patents

Semiconductor device protected against overvoltages

Info

Publication number
GB2019645A
GB2019645A GB7913769A GB7913769A GB2019645A GB 2019645 A GB2019645 A GB 2019645A GB 7913769 A GB7913769 A GB 7913769A GB 7913769 A GB7913769 A GB 7913769A GB 2019645 A GB2019645 A GB 2019645A
Authority
GB
United Kingdom
Prior art keywords
region
type
resistivity
layer
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB7913769A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of GB2019645A publication Critical patent/GB2019645A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

A transistor protected against overvoltages comprises, a first low resistivity P type layer (2), a second high resistivity P type layer (4), and a third high resistivity N type layer (6) forming a first PN junction therewith. In the third layer (6) are formed a first low resistivity N type region (8), a second low resistivity P type region (10) defining a second PN junction, and a third low resistivity P type region (12) defining a third PN junction therewith. Metal layers forming collector (20), base (16) and emitter (18) terminals ohmically contact the first layer, first region and second region respectively as shown. The resistivity of the second and third layers (4, 6) and the distances between the first and second and first and third PN junctions are such that in operation, the base depletion region may reach the third junction but not the second. In a variant emitter region (10) is wholly within region (8) which is deeper and is apertured to accommodate a shallower third region (12). The conductivity types of the regions may be reversed. <IMAGE>
GB7913769A 1978-04-20 1979-04-20 Semiconductor device protected against overvoltages Withdrawn GB2019645A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22499/78A IT1094080B (en) 1978-04-20 1978-04-20 SEMICONDUCTOR PROTECTED DEVICE AGAINST OVERVOLTAGE

Publications (1)

Publication Number Publication Date
GB2019645A true GB2019645A (en) 1979-10-31

Family

ID=11197088

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7913769A Withdrawn GB2019645A (en) 1978-04-20 1979-04-20 Semiconductor device protected against overvoltages

Country Status (6)

Country Link
JP (1) JPS54158877A (en)
DE (1) DE2915918A1 (en)
FR (1) FR2423867A1 (en)
GB (1) GB2019645A (en)
IT (1) IT1094080B (en)
SE (1) SE7903441L (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2140204A (en) * 1983-05-16 1984-11-21 Ates Componenti Elettron Power transistor structure with ballast resistor
EP0210376A1 (en) * 1985-07-29 1987-02-04 Motorola, Inc. Low Voltage clamp
EP0226469A1 (en) * 1985-12-12 1987-06-24 Mitsubishi Denki Kabushiki Kaisha A semiconductor integrated circuit device
EP0443055A1 (en) * 1990-02-20 1991-08-28 Siemens Aktiengesellschaft Input protection structure for integrated circuits
EP0477429A1 (en) * 1990-09-28 1992-04-01 Siemens Aktiengesellschaft Input protection structure for integrated circuits

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100467A (en) * 1980-01-14 1981-08-12 Nec Corp Protecting device against electrostatic destruction
JPS59181679A (en) * 1983-03-31 1984-10-16 Nippon Denso Co Ltd Semiconductor device
JPS6159773A (en) * 1984-08-30 1986-03-27 Fujitsu Ltd Semiconductor integrated circuit device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2140204A (en) * 1983-05-16 1984-11-21 Ates Componenti Elettron Power transistor structure with ballast resistor
EP0210376A1 (en) * 1985-07-29 1987-02-04 Motorola, Inc. Low Voltage clamp
EP0226469A1 (en) * 1985-12-12 1987-06-24 Mitsubishi Denki Kabushiki Kaisha A semiconductor integrated circuit device
EP0443055A1 (en) * 1990-02-20 1991-08-28 Siemens Aktiengesellschaft Input protection structure for integrated circuits
EP0477429A1 (en) * 1990-09-28 1992-04-01 Siemens Aktiengesellschaft Input protection structure for integrated circuits
US5170240A (en) * 1990-09-28 1992-12-08 Siemens Aktiengesellschaft Input protection structure for integrated circuits

Also Published As

Publication number Publication date
IT7822499A0 (en) 1978-04-20
IT1094080B (en) 1985-07-26
JPS54158877A (en) 1979-12-15
SE7903441L (en) 1979-10-21
FR2423867A1 (en) 1979-11-16
DE2915918A1 (en) 1979-10-31

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)