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GB926487A - Improvements in and relating to electrical fuse assemblies - Google Patents

Improvements in and relating to electrical fuse assemblies

Info

Publication number
GB926487A
GB926487A GB29190/60A GB2919060A GB926487A GB 926487 A GB926487 A GB 926487A GB 29190/60 A GB29190/60 A GB 29190/60A GB 2919060 A GB2919060 A GB 2919060A GB 926487 A GB926487 A GB 926487A
Authority
GB
United Kingdom
Prior art keywords
fuse
electrical fuse
carrier
base
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB29190/60A
Inventor
Thomas Geoffrey Fento Atherton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dorman & Smith Ltd
Original Assignee
Dorman & Smith Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dorman & Smith Ltd filed Critical Dorman & Smith Ltd
Publication of GB926487A publication Critical patent/GB926487A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/38—Means for extinguishing or suppressing arc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/38—Means for extinguishing or suppressing arc
    • H01H2085/386—Means for extinguishing or suppressing arc with magnetic or electrodynamic arc-blowing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Fuses (AREA)

Abstract

926,487. Fusible cut-outs. DORMAN & SMITH Ltd. July 13, 1961 [Aug. 24, 1960], No. 29190/60. Class 38 (1). An electrical fuse comprises a conductor arranged with a U-shape where the desired break point is at the base of the U so that the mutually repellant magnetic fields around the two limbs of the U cause their separation at the break-point at the fusing current. In an embodiment (Fig. 2) a fuse carrier 17 comprises a plate 18 with dependent oppositely curved flanges 19 carrying leaf contacts 20 and a bridge member 21 separating the flanges around three sides of which passes a fusing link 23. The carrier is engageable with a fuse base 10 (Fig. 1) comprising a casing ventilated at 25 carrying terminal blocks 12.
GB29190/60A 1960-11-25 1960-08-24 Improvements in and relating to electrical fuse assemblies Expired GB926487A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES71415A DE1128413B (en) 1960-11-25 1960-11-25 Process for the production of decomposition-free single-crystal silicon by crucible-free zone melting

Publications (1)

Publication Number Publication Date
GB926487A true GB926487A (en) 1963-05-22

Family

ID=7502452

Family Applications (2)

Application Number Title Priority Date Filing Date
GB29190/60A Expired GB926487A (en) 1960-11-25 1960-08-24 Improvements in and relating to electrical fuse assemblies
GB29981/61A Expired GB926497A (en) 1960-11-25 1961-08-18 A process for producing a monocrystal from a polycrystalline rod of silicon

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB29981/61A Expired GB926497A (en) 1960-11-25 1961-08-18 A process for producing a monocrystal from a polycrystalline rod of silicon

Country Status (7)

Country Link
US (1) US3175891A (en)
BE (1) BE610603A (en)
CH (1) CH395554A (en)
DE (1) DE1128413B (en)
GB (2) GB926487A (en)
NL (2) NL139006B (en)
SE (1) SE306303B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6411697A (en) * 1963-10-15 1965-04-20
DE1224273B (en) * 1964-06-23 1966-09-08 Siemens Ag Device for crucible-free zone melting
BE789637A (en) * 1972-10-03 1973-04-03 Elphiac Sa SINGLE CRYSTAL MANUFACTURING PROCESS AND INSTALLATION TO EXECUTE THIS PROCESS.
DE2356376A1 (en) * 1973-11-12 1975-05-15 Siemens Ag PROCESS FOR PRODUCING HOMOGENOUS DOPED SILICON CRYSTALS WITH N-CONDUCTIVITY BY NEUTRON RADIATION

Also Published As

Publication number Publication date
DE1128413B (en) 1962-04-26
GB926497A (en) 1963-05-22
SE306303B (en) 1968-11-25
US3175891A (en) 1965-03-30
NL139006B (en) 1973-06-15
BE610603A (en) 1962-05-22
CH395554A (en) 1965-07-15
NL266876A (en)

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