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DE60128544D1 - Verfahren zur herstellung einer siliziumschmelze - Google Patents

Verfahren zur herstellung einer siliziumschmelze

Info

Publication number
DE60128544D1
DE60128544D1 DE60128544T DE60128544T DE60128544D1 DE 60128544 D1 DE60128544 D1 DE 60128544D1 DE 60128544 T DE60128544 T DE 60128544T DE 60128544 T DE60128544 T DE 60128544T DE 60128544 D1 DE60128544 D1 DE 60128544D1
Authority
DE
Germany
Prior art keywords
producing
silicone melt
silicone
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60128544T
Other languages
English (en)
Other versions
DE60128544T2 (de
Inventor
John D Holder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE60128544D1 publication Critical patent/DE60128544D1/de
Application granted granted Critical
Publication of DE60128544T2 publication Critical patent/DE60128544T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
DE60128544T 2000-02-14 2001-01-31 Verfahren zur herstellung einer siliziumschmelze Expired - Lifetime DE60128544T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US503566 1995-07-18
US09/503,566 US6344083B1 (en) 2000-02-14 2000-02-14 Process for producing a silicon melt
PCT/US2001/003460 WO2001061081A1 (en) 2000-02-14 2001-01-31 Process for producing a silicon melt

Publications (2)

Publication Number Publication Date
DE60128544D1 true DE60128544D1 (de) 2007-07-05
DE60128544T2 DE60128544T2 (de) 2008-01-31

Family

ID=24002600

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60128544T Expired - Lifetime DE60128544T2 (de) 2000-02-14 2001-01-31 Verfahren zur herstellung einer siliziumschmelze

Country Status (7)

Country Link
US (2) US6344083B1 (de)
EP (1) EP1257697B1 (de)
JP (1) JP4335489B2 (de)
KR (1) KR100705526B1 (de)
DE (1) DE60128544T2 (de)
TW (1) TWI228552B (de)
WO (1) WO2001061081A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6344083B1 (en) * 2000-02-14 2002-02-05 Memc Electronic Materials, Inc. Process for producing a silicon melt
US6749683B2 (en) * 2000-02-14 2004-06-15 Memc Electronic Materials, Inc. Process for producing a silicon melt
US6730580B2 (en) * 2001-07-03 2004-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealing
KR101229067B1 (ko) * 2004-02-02 2013-02-04 신에쯔 한도타이 가부시키가이샤 실리콘 단결정, 실리콘 웨이퍼, 그 제조장치 및 제조방법
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7691199B2 (en) * 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7344594B2 (en) * 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
CN102929104B (zh) * 2005-06-02 2016-08-03 卡尔蔡司Smt有限责任公司 光学成像装置
JP4753308B2 (ja) * 2006-07-13 2011-08-24 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハ素材の溶解方法及び半導体ウェーハの結晶育成方法
US20090120353A1 (en) * 2007-11-13 2009-05-14 Memc Electronic Materials, Inc. Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt
US9945048B2 (en) * 2012-06-15 2018-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615261A (en) 1969-04-02 1971-10-26 Motorola Inc Method of producing single semiconductor crystals
US4249988A (en) * 1978-03-15 1981-02-10 Western Electric Company, Inc. Growing crystals from a melt by controlling additions of material thereto
US4415401A (en) * 1980-03-10 1983-11-15 Mobil Solar Energy Corporation Control of atmosphere surrounding crystal growth zone
US4591409A (en) 1984-05-03 1986-05-27 Texas Instruments Incorporated Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth
JPS61127697A (ja) 1984-11-20 1986-06-14 Nec Corp シリコン単結晶の製造方法
DE3485093D1 (de) * 1984-12-28 1991-10-24 Ibm Zuechtungsverfahren und vorrichtung zur herstellung von siliciumkristallen mit hohem und kontrolliertem kohlenstoffgehalt.
US5373805A (en) * 1991-10-17 1994-12-20 Shin-Etsu Handotai Co., Ltd. Single crystal pulling apparatus
JP2785585B2 (ja) 1992-04-21 1998-08-13 信越半導体株式会社 シリコン単結晶の製造方法
US5976247A (en) 1995-06-14 1999-11-02 Memc Electronic Materials, Inc. Surface-treated crucibles for improved zero dislocation performance
US5980629A (en) 1995-06-14 1999-11-09 Memc Electronic Materials, Inc. Methods for improving zero dislocation yield of single crystals
JPH0930889A (ja) * 1995-07-18 1997-02-04 Komatsu Electron Metals Co Ltd 半導体単結晶の引上装置
US5588993A (en) 1995-07-25 1996-12-31 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
US5676751A (en) * 1996-01-22 1997-10-14 Memc Electronic Materials, Inc. Rapid cooling of CZ silicon crystal growth system
US5814148A (en) * 1996-02-01 1998-09-29 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
US5919303A (en) 1997-10-16 1999-07-06 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
US5913975A (en) 1998-02-03 1999-06-22 Memc Electronic Materials, Inc. Crucible and method of preparation thereof
TW508378B (en) 1998-03-09 2002-11-01 Shinetsu Handotai Kk A method for producing a silicon single crystal wafer and a silicon single crystal wafer
US6344083B1 (en) * 2000-02-14 2002-02-05 Memc Electronic Materials, Inc. Process for producing a silicon melt

Also Published As

Publication number Publication date
JP4335489B2 (ja) 2009-09-30
KR100705526B1 (ko) 2007-04-10
US6344083B1 (en) 2002-02-05
US6652645B2 (en) 2003-11-25
DE60128544T2 (de) 2008-01-31
EP1257697A1 (de) 2002-11-20
TWI228552B (en) 2005-03-01
JP2003522718A (ja) 2003-07-29
WO2001061081A1 (en) 2001-08-23
EP1257697B1 (de) 2007-05-23
KR20020081324A (ko) 2002-10-26
WO2001061081A9 (en) 2002-11-07
US20020020339A1 (en) 2002-02-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition