DE60116381D1 - Elektro-optische struktur und verfahren zu ihrer herstellung - Google Patents
Elektro-optische struktur und verfahren zu ihrer herstellungInfo
- Publication number
- DE60116381D1 DE60116381D1 DE60116381T DE60116381T DE60116381D1 DE 60116381 D1 DE60116381 D1 DE 60116381D1 DE 60116381 T DE60116381 T DE 60116381T DE 60116381 T DE60116381 T DE 60116381T DE 60116381 D1 DE60116381 D1 DE 60116381D1
- Authority
- DE
- Germany
- Prior art keywords
- oxide
- buffer layer
- layer
- accommodating buffer
- monocrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/02—Optical fibres with cladding with or without a coating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0338—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect structurally associated with a photoconductive layer or having photo-refractive properties
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Glass Compositions (AREA)
- Electric Cable Installation (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US669602 | 2000-09-26 | ||
| US09/669,602 US6493497B1 (en) | 2000-09-26 | 2000-09-26 | Electro-optic structure and process for fabricating same |
| PCT/US2001/028096 WO2002027362A2 (en) | 2000-09-26 | 2001-09-07 | Electro-optic structure and process for fabricating same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60116381D1 true DE60116381D1 (de) | 2006-02-02 |
| DE60116381T2 DE60116381T2 (de) | 2006-07-13 |
Family
ID=24686965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60116381T Expired - Lifetime DE60116381T2 (de) | 2000-09-26 | 2001-09-07 | Elektro-optische struktur und verfahren zu ihrer herstellung |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6493497B1 (de) |
| EP (1) | EP1354227B9 (de) |
| JP (1) | JP2004527778A (de) |
| KR (1) | KR100809860B1 (de) |
| CN (1) | CN1239930C (de) |
| AT (1) | ATE314669T1 (de) |
| AU (1) | AU2001287142A1 (de) |
| DE (1) | DE60116381T2 (de) |
| TW (1) | TW557584B (de) |
| WO (1) | WO2002027362A2 (de) |
Families Citing this family (93)
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| US6807352B2 (en) * | 2001-02-11 | 2004-10-19 | Georgia Tech Research Corporation | Optical waveguides with embedded air-gap cladding layer and methods of fabrication thereof |
| US6785458B2 (en) * | 2001-02-11 | 2004-08-31 | Georgia Tech Research Corporation | Guided-wave optical interconnections embedded within a microelectronic wafer-level batch package |
| JP4103421B2 (ja) * | 2001-03-28 | 2008-06-18 | セイコーエプソン株式会社 | 電子デバイス及び電子機器 |
| GB2385427A (en) * | 2002-02-06 | 2003-08-20 | Sdl Integrated Optics Ltd | Optical devices |
| US6999670B1 (en) * | 2002-08-27 | 2006-02-14 | Luxtera, Inc. | Active waveguides for optoelectronic devices |
| US7388259B2 (en) * | 2002-11-25 | 2008-06-17 | International Business Machines Corporation | Strained finFET CMOS device structures |
| US7020374B2 (en) * | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| US6845198B2 (en) * | 2003-03-25 | 2005-01-18 | Sioptical, Inc. | High-speed silicon-based electro-optic modulator |
| EP1625424A4 (de) * | 2003-04-23 | 2009-04-15 | Siophcal Inc | Auf einer optischen soi-plattform gebildete planare submikrometer-lichtwelleneinrichtungen |
| US6887798B2 (en) * | 2003-05-30 | 2005-05-03 | International Business Machines Corporation | STI stress modification by nitrogen plasma treatment for improving performance in small width devices |
| US7329923B2 (en) * | 2003-06-17 | 2008-02-12 | International Business Machines Corporation | High-performance CMOS devices on hybrid crystal oriented substrates |
| US7279746B2 (en) * | 2003-06-30 | 2007-10-09 | International Business Machines Corporation | High performance CMOS device structures and method of manufacture |
| US6993212B2 (en) * | 2003-09-08 | 2006-01-31 | Intel Corporation | Optical waveguide devices having adjustable waveguide cladding |
| US7410846B2 (en) | 2003-09-09 | 2008-08-12 | International Business Machines Corporation | Method for reduced N+ diffusion in strained Si on SiGe substrate |
| US6890808B2 (en) * | 2003-09-10 | 2005-05-10 | International Business Machines Corporation | Method and structure for improved MOSFETs using poly/silicide gate height control |
| US6887751B2 (en) * | 2003-09-12 | 2005-05-03 | International Business Machines Corporation | MOSFET performance improvement using deformation in SOI structure |
| US7170126B2 (en) * | 2003-09-16 | 2007-01-30 | International Business Machines Corporation | Structure of vertical strained silicon devices |
| US6869866B1 (en) | 2003-09-22 | 2005-03-22 | International Business Machines Corporation | Silicide proximity structures for CMOS device performance improvements |
| US7144767B2 (en) * | 2003-09-23 | 2006-12-05 | International Business Machines Corporation | NFETs using gate induced stress modulation |
| US6872641B1 (en) * | 2003-09-23 | 2005-03-29 | International Business Machines Corporation | Strained silicon on relaxed sige film with uniform misfit dislocation density |
| US7119403B2 (en) | 2003-10-16 | 2006-10-10 | International Business Machines Corporation | High performance strained CMOS devices |
| US7037770B2 (en) | 2003-10-20 | 2006-05-02 | International Business Machines Corporation | Method of manufacturing strained dislocation-free channels for CMOS |
| US7303949B2 (en) | 2003-10-20 | 2007-12-04 | International Business Machines Corporation | High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture |
| US7129126B2 (en) | 2003-11-05 | 2006-10-31 | International Business Machines Corporation | Method and structure for forming strained Si for CMOS devices |
| US7015082B2 (en) * | 2003-11-06 | 2006-03-21 | International Business Machines Corporation | High mobility CMOS circuits |
| US7029964B2 (en) * | 2003-11-13 | 2006-04-18 | International Business Machines Corporation | Method of manufacturing a strained silicon on a SiGe on SOI substrate |
| US7122849B2 (en) * | 2003-11-14 | 2006-10-17 | International Business Machines Corporation | Stressed semiconductor device structures having granular semiconductor material |
| US7247534B2 (en) | 2003-11-19 | 2007-07-24 | International Business Machines Corporation | Silicon device on Si:C-OI and SGOI and method of manufacture |
| US7198995B2 (en) | 2003-12-12 | 2007-04-03 | International Business Machines Corporation | Strained finFETs and method of manufacture |
| US7247912B2 (en) * | 2004-01-05 | 2007-07-24 | International Business Machines Corporation | Structures and methods for making strained MOSFETs |
| US7118999B2 (en) | 2004-01-16 | 2006-10-10 | International Business Machines Corporation | Method and apparatus to increase strain effect in a transistor channel |
| US7202132B2 (en) | 2004-01-16 | 2007-04-10 | International Business Machines Corporation | Protecting silicon germanium sidewall with silicon for strained silicon/silicon germanium MOSFETs |
| US7381609B2 (en) | 2004-01-16 | 2008-06-03 | International Business Machines Corporation | Method and structure for controlling stress in a transistor channel |
| US7923782B2 (en) * | 2004-02-27 | 2011-04-12 | International Business Machines Corporation | Hybrid SOI/bulk semiconductor transistors |
| US7205206B2 (en) | 2004-03-03 | 2007-04-17 | International Business Machines Corporation | Method of fabricating mobility enhanced CMOS devices |
| US7504693B2 (en) * | 2004-04-23 | 2009-03-17 | International Business Machines Corporation | Dislocation free stressed channels in bulk silicon and SOI CMOS devices by gate stress engineering |
| DE102004026145A1 (de) * | 2004-05-28 | 2006-05-11 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterstruktur mit einem spannungsempfindlichen Element und Verfahren zum Messen einer elastischen Spannung in einer Halbleiterstruktur |
| GB2430306B (en) * | 2004-05-28 | 2009-10-21 | Advanced Micro Devices Inc | Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure |
| US7223994B2 (en) | 2004-06-03 | 2007-05-29 | International Business Machines Corporation | Strained Si on multiple materials for bulk or SOI substrates |
| US7037794B2 (en) * | 2004-06-09 | 2006-05-02 | International Business Machines Corporation | Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain |
| US7227205B2 (en) * | 2004-06-24 | 2007-06-05 | International Business Machines Corporation | Strained-silicon CMOS device and method |
| TWI463526B (zh) * | 2004-06-24 | 2014-12-01 | 萬國商業機器公司 | 改良具應力矽之ｃｍｏｓ元件的方法及以該方法製備而成的元件 |
| US7288443B2 (en) | 2004-06-29 | 2007-10-30 | International Business Machines Corporation | Structures and methods for manufacturing p-type MOSFET with graded embedded silicon-germanium source-drain and/or extension |
| US7217949B2 (en) * | 2004-07-01 | 2007-05-15 | International Business Machines Corporation | Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI) |
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| US7384829B2 (en) * | 2004-07-23 | 2008-06-10 | International Business Machines Corporation | Patterned strained semiconductor substrate and device |
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| US7193254B2 (en) * | 2004-11-30 | 2007-03-20 | International Business Machines Corporation | Structure and method of applying stresses to PFET and NFET transistor channels for improved performance |
| US7238565B2 (en) | 2004-12-08 | 2007-07-03 | International Business Machines Corporation | Methodology for recovery of hot carrier induced degradation in bipolar devices |
| US7262087B2 (en) * | 2004-12-14 | 2007-08-28 | International Business Machines Corporation | Dual stressed SOI substrates |
| US7173312B2 (en) * | 2004-12-15 | 2007-02-06 | International Business Machines Corporation | Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification |
| US7274084B2 (en) * | 2005-01-12 | 2007-09-25 | International Business Machines Corporation | Enhanced PFET using shear stress |
| US7432553B2 (en) * | 2005-01-19 | 2008-10-07 | International Business Machines Corporation | Structure and method to optimize strain in CMOSFETs |
| US7220626B2 (en) * | 2005-01-28 | 2007-05-22 | International Business Machines Corporation | Structure and method for manufacturing planar strained Si/SiGe substrate with multiple orientations and different stress levels |
| US7256081B2 (en) * | 2005-02-01 | 2007-08-14 | International Business Machines Corporation | Structure and method to induce strain in a semiconductor device channel with stressed film under the gate |
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-
2000
- 2000-09-26 US US09/669,602 patent/US6493497B1/en not_active Expired - Fee Related
-
2001
- 2001-09-07 AU AU2001287142A patent/AU2001287142A1/en not_active Abandoned
- 2001-09-07 KR KR1020037004273A patent/KR100809860B1/ko not_active Expired - Fee Related
- 2001-09-07 EP EP01966646A patent/EP1354227B9/de not_active Expired - Lifetime
- 2001-09-07 AT AT01966646T patent/ATE314669T1/de not_active IP Right Cessation
- 2001-09-07 DE DE60116381T patent/DE60116381T2/de not_active Expired - Lifetime
- 2001-09-07 WO PCT/US2001/028096 patent/WO2002027362A2/en not_active Ceased
- 2001-09-07 JP JP2002530885A patent/JP2004527778A/ja active Pending
- 2001-09-07 CN CNB018163637A patent/CN1239930C/zh not_active Expired - Fee Related
- 2001-09-21 TW TW090123359A patent/TW557584B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100809860B1 (ko) | 2008-03-04 |
| AU2001287142A1 (en) | 2002-04-08 |
| JP2004527778A (ja) | 2004-09-09 |
| TW557584B (en) | 2003-10-11 |
| EP1354227A2 (de) | 2003-10-22 |
| EP1354227B9 (de) | 2006-06-21 |
| DE60116381T2 (de) | 2006-07-13 |
| CN1239930C (zh) | 2006-02-01 |
| ATE314669T1 (de) | 2006-01-15 |
| US6493497B1 (en) | 2002-12-10 |
| WO2002027362A2 (en) | 2002-04-04 |
| WO2002027362A3 (en) | 2003-07-31 |
| CN1543580A (zh) | 2004-11-03 |
| EP1354227B1 (de) | 2005-12-28 |
| KR20030051676A (ko) | 2003-06-25 |
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