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WO2002008806A3 - Monolithic optical system - Google Patents

Monolithic optical system Download PDF

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Publication number
WO2002008806A3
WO2002008806A3 PCT/US2001/022423 US0122423W WO0208806A3 WO 2002008806 A3 WO2002008806 A3 WO 2002008806A3 US 0122423 W US0122423 W US 0122423W WO 0208806 A3 WO0208806 A3 WO 0208806A3
Authority
WO
WIPO (PCT)
Prior art keywords
high quality
buffer layer
accommodating buffer
layer
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/022423
Other languages
French (fr)
Other versions
WO2002008806A2 (en
Inventor
Barbara M Foley
Jerald A Hallmark
William Jay Ooms
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2001282899A priority Critical patent/AU2001282899A1/en
Publication of WO2002008806A2 publication Critical patent/WO2002008806A2/en
Publication of WO2002008806A3 publication Critical patent/WO2002008806A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12107—Grating

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)

Abstract

High quality epitaxial layers of compound semiconductor materials (111) can be grown overlying large silicon wafers by first growing an accommodating buffer layer (24) on a silicon wafer (92). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (98) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Optical structures, including optical sources (1112) such as light emitting diodes or lasers and photodetectors such as photodiodes (1114) may be formed in the high quality epitaxial compound semiconductor material while wave guides (1004) having refractive and reflective capabilities are formed in the oxide layers underlying the high quality epitaxial compound semiconductor material. These optical structures are monolithically coupled to one another to form monolithic optical systems.
PCT/US2001/022423 2000-07-21 2001-07-17 Monolithic optical system Ceased WO2002008806A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001282899A AU2001282899A1 (en) 2000-07-21 2001-07-17 Monolithic optical system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62177900A 2000-07-21 2000-07-21
US09/621,779 2000-07-21

Publications (2)

Publication Number Publication Date
WO2002008806A2 WO2002008806A2 (en) 2002-01-31
WO2002008806A3 true WO2002008806A3 (en) 2002-06-27

Family

ID=24491597

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/022423 Ceased WO2002008806A2 (en) 2000-07-21 2001-07-17 Monolithic optical system

Country Status (3)

Country Link
AU (1) AU2001282899A1 (en)
TW (1) TW523809B (en)
WO (1) WO2002008806A2 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7005717B2 (en) 2000-05-31 2006-02-28 Freescale Semiconductor, Inc. Semiconductor device and method
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US7045815B2 (en) 2001-04-02 2006-05-16 Freescale Semiconductor, Inc. Semiconductor structure exhibiting reduced leakage current and method of fabricating same
US7067856B2 (en) 2000-02-10 2006-06-27 Freescale Semiconductor, Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US7105866B2 (en) 2000-07-24 2006-09-12 Freescale Semiconductor, Inc. Heterojunction tunneling diodes and process for fabricating same
US7161227B2 (en) 2001-08-14 2007-01-09 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US7211852B2 (en) 2001-01-19 2007-05-01 Freescale Semiconductor, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US7342276B2 (en) 2001-10-17 2008-03-11 Freescale Semiconductor, Inc. Method and apparatus utilizing monocrystalline insulator

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001276964A1 (en) * 2000-07-24 2002-02-05 Motorola, Inc. Integrated radiation emitting system and process for fabricating same
US6806202B2 (en) 2002-12-03 2004-10-19 Motorola, Inc. Method of removing silicon oxide from a surface of a substrate
DE102006017293A1 (en) 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh Method for production of optically pumpable semiconductor device, involves providing connection carrier assembly comprising plurality of connection carriers, which are mechanically and fixedly connected to one another
TWI295355B (en) 2006-08-30 2008-04-01 Ind Tech Res Inst Optical diffusion module and method of manufacturing optical diffusion structure
TWI363900B (en) 2007-10-04 2012-05-11 Ind Tech Res Inst Light guiding film
DE102008029726A1 (en) * 2008-06-23 2009-12-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Light conductor arrangement for use as integrated optical circuit, has reflecting surface whose expansion amount is greater than diameter of waveguide, in direction perpendicular to semiconductor substrate
ES2717200T3 (en) 2008-12-12 2019-06-19 Bae Systems Plc Improvements in waveguides or related to these
DE102018221841A1 (en) * 2018-12-14 2020-06-18 Volkswagen Aktiengesellschaft Illuminated display device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4084130A (en) * 1974-01-18 1978-04-11 Texas Instruments Incorporated Laser for integrated optical circuits
EP0602568A2 (en) * 1992-12-17 1994-06-22 Eastman Kodak Company A multilayer structure having a (111)-oriented buffer layer
US5357122A (en) * 1991-09-05 1994-10-18 Sony Corporation Three-dimensional optical-electronic integrated circuit device with raised sections
DE19607107A1 (en) * 1996-02-26 1997-08-28 Sel Alcatel Ag Light conductor to opto-electronic component coupling apparatus for optical communications
JPH11238683A (en) * 1998-02-20 1999-08-31 Asahi Chem Ind Co Ltd Manufacture of compound semiconductor film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4084130A (en) * 1974-01-18 1978-04-11 Texas Instruments Incorporated Laser for integrated optical circuits
US5357122A (en) * 1991-09-05 1994-10-18 Sony Corporation Three-dimensional optical-electronic integrated circuit device with raised sections
EP0602568A2 (en) * 1992-12-17 1994-06-22 Eastman Kodak Company A multilayer structure having a (111)-oriented buffer layer
DE19607107A1 (en) * 1996-02-26 1997-08-28 Sel Alcatel Ag Light conductor to opto-electronic component coupling apparatus for optical communications
JPH11238683A (en) * 1998-02-20 1999-08-31 Asahi Chem Ind Co Ltd Manufacture of compound semiconductor film

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 13 30 November 1999 (1999-11-30) *
Q.-Y. TONG ET AL.: "IOS-a new type of materials combination for system-on-a-chip preparation", IEEE INTERNATIONAL SOI CONFERENCE, 4 October 1999 (1999-10-04) - 7 October 1999 (1999-10-07), Rohnert Park, CA, USA, pages 104 - 105, XP001056585 *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067856B2 (en) 2000-02-10 2006-06-27 Freescale Semiconductor, Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US7005717B2 (en) 2000-05-31 2006-02-28 Freescale Semiconductor, Inc. Semiconductor device and method
US7105866B2 (en) 2000-07-24 2006-09-12 Freescale Semiconductor, Inc. Heterojunction tunneling diodes and process for fabricating same
US7211852B2 (en) 2001-01-19 2007-05-01 Freescale Semiconductor, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US7045815B2 (en) 2001-04-02 2006-05-16 Freescale Semiconductor, Inc. Semiconductor structure exhibiting reduced leakage current and method of fabricating same
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US7161227B2 (en) 2001-08-14 2007-01-09 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US7342276B2 (en) 2001-10-17 2008-03-11 Freescale Semiconductor, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices

Also Published As

Publication number Publication date
WO2002008806A2 (en) 2002-01-31
AU2001282899A1 (en) 2002-02-05
TW523809B (en) 2003-03-11

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