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WO2002009158A3 - Semiconductor structure including a magnetic tunnel junction - Google Patents

Semiconductor structure including a magnetic tunnel junction Download PDF

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Publication number
WO2002009158A3
WO2002009158A3 PCT/US2001/022659 US0122659W WO0209158A3 WO 2002009158 A3 WO2002009158 A3 WO 2002009158A3 US 0122659 W US0122659 W US 0122659W WO 0209158 A3 WO0209158 A3 WO 0209158A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
silicon
accommodating buffer
buffer layer
ferromagnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/022659
Other languages
French (fr)
Other versions
WO2002009158A2 (en
Inventor
Kurt Eisenbeiser
Jeffrey M Finder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2001276980A priority Critical patent/AU2001276980A1/en
Publication of WO2002009158A2 publication Critical patent/WO2002009158A2/en
Publication of WO2002009158A3 publication Critical patent/WO2002009158A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)

Abstract

High quality epitaxial layers of ferromagnetic materials can be grown overlying large silicon wafers (22) by first growing an accommodating buffer layer (24) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. This technique permits the fabrication of devices (96) employing ferromagnetic materials on a monocrystalline semiconductor substrate. In particular, magnetic tunnel junction devices comprising an insulator layer (32) and a second ferromagnetic layer (33) formed on first ferromagnetic layer (26) may be fabricated on silicon in accordance with this technique.
PCT/US2001/022659 2000-07-24 2001-07-18 Semiconductor structure including a magnetic tunnel junction Ceased WO2002009158A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001276980A AU2001276980A1 (en) 2000-07-24 2001-07-18 Semiconductor structure including a magnetic tunnel junction

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62452600A 2000-07-24 2000-07-24
US09/624,526 2000-07-24

Publications (2)

Publication Number Publication Date
WO2002009158A2 WO2002009158A2 (en) 2002-01-31
WO2002009158A3 true WO2002009158A3 (en) 2002-07-18

Family

ID=24502329

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/022659 Ceased WO2002009158A2 (en) 2000-07-24 2001-07-18 Semiconductor structure including a magnetic tunnel junction

Country Status (3)

Country Link
AU (1) AU2001276980A1 (en)
TW (1) TW503460B (en)
WO (1) WO2002009158A2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071118B2 (en) 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US8927403B2 (en) 2005-03-15 2015-01-06 Asm International N.V. Selective deposition of noble metal thin films
US9129897B2 (en) 2008-12-19 2015-09-08 Asm International N.V. Metal silicide, metal germanide, methods for making the same
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US9587307B2 (en) 2005-03-15 2017-03-07 Asm International N.V. Enhanced deposition of noble metals

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
AU2002225761A1 (en) 2000-11-30 2002-06-11 Asm America, Inc. Thin films for magnetic devices
US6759081B2 (en) 2001-05-11 2004-07-06 Asm International, N.V. Method of depositing thin films for magnetic heads
US7037574B2 (en) 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
CN111816760B (en) * 2019-04-11 2023-07-14 上海磁宇信息科技有限公司 Magnetic memory cell of magnetic random access memory and forming method thereof
TW202200828A (en) 2020-06-24 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Vapor deposition of films comprising molybdenum

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5792569A (en) * 1996-03-19 1998-08-11 International Business Machines Corporation Magnetic devices and sensors based on perovskite manganese oxide materials
WO2001033585A1 (en) * 1999-11-05 2001-05-10 Oxxel Oxide Electronics Technology, Inc. Synthesis and magnetoresistance test system using double-perovskite samples for preparation of a magnetoresistance device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5792569A (en) * 1996-03-19 1998-08-11 International Business Machines Corporation Magnetic devices and sensors based on perovskite manganese oxide materials
WO2001033585A1 (en) * 1999-11-05 2001-05-10 Oxxel Oxide Electronics Technology, Inc. Synthesis and magnetoresistance test system using double-perovskite samples for preparation of a magnetoresistance device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
MARTINEZ BOUBETA C ET AL: "Epitaxial metallic nanostructures on GaAs", SURFACE SCIENCE, vol. 482-485, June 2001 (2001-06-01), Elsevier, Netherlands, pages 910 - 915, XP002191521, ISSN: 0039-6028 *
OBATA T ET AL: "Tunneling magnetoresistance at up to 270 K in La0.8Sr0.2MnO3/SrTiO3/La0.8Sr0.2MnO3 junctions with 1.6-nm-thick barriers", APPLIED PHYSICS LETTERS, vol. 74, no. 2, 11 January 1999 (1999-01-11), pages 290 - 292, XP000804874, ISSN: 0003-6951 *
PUST L ET AL: "Temperature dependence of the magnetization reversal in Co(fcc)-BN-Co(poly hcp) structures", JOURNAL OF APPLIED PHYSICS, vol. 85, no. 8, 15 April 1999 (1999-04-15), pages 5765 - 5767, XP000902206, ISSN: 0021-8979 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071118B2 (en) 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US8927403B2 (en) 2005-03-15 2015-01-06 Asm International N.V. Selective deposition of noble metal thin films
US9469899B2 (en) 2005-03-15 2016-10-18 Asm International N.V. Selective deposition of noble metal thin films
US9587307B2 (en) 2005-03-15 2017-03-07 Asm International N.V. Enhanced deposition of noble metals
US9129897B2 (en) 2008-12-19 2015-09-08 Asm International N.V. Metal silicide, metal germanide, methods for making the same
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide

Also Published As

Publication number Publication date
WO2002009158A2 (en) 2002-01-31
TW503460B (en) 2002-09-21
AU2001276980A1 (en) 2002-02-05

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