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DE60029554D1 - Halbleiterbauelement mit hochspannungselement - Google Patents

Halbleiterbauelement mit hochspannungselement

Info

Publication number
DE60029554D1
DE60029554D1 DE60029554T DE60029554T DE60029554D1 DE 60029554 D1 DE60029554 D1 DE 60029554D1 DE 60029554 T DE60029554 T DE 60029554T DE 60029554 T DE60029554 T DE 60029554T DE 60029554 D1 DE60029554 D1 DE 60029554D1
Authority
DE
Germany
Prior art keywords
high voltage
semiconductor component
voltage element
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60029554T
Other languages
English (en)
Other versions
DE60029554T2 (de
Inventor
P Meeuwsen
G Huizing
W Ludikhuize
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE60029554D1 publication Critical patent/DE60029554D1/de
Application granted granted Critical
Publication of DE60029554T2 publication Critical patent/DE60029554T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H10W42/80—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
DE60029554T 1999-06-03 2000-05-19 Halbleiterbauelement mit hochspannungselement Expired - Lifetime DE60029554T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP99201760 1999-06-03
EP99201760 1999-06-03
PCT/EP2000/004625 WO2000075989A1 (en) 1999-06-03 2000-05-19 Semiconductor device comprising a high-voltage circuit element

Publications (2)

Publication Number Publication Date
DE60029554D1 true DE60029554D1 (de) 2006-09-07
DE60029554T2 DE60029554T2 (de) 2007-07-12

Family

ID=8240264

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60029554T Expired - Lifetime DE60029554T2 (de) 1999-06-03 2000-05-19 Halbleiterbauelement mit hochspannungselement

Country Status (6)

Country Link
US (1) US6608351B1 (de)
EP (1) EP1116273B1 (de)
JP (1) JP2003501837A (de)
KR (1) KR100722012B1 (de)
DE (1) DE60029554T2 (de)
WO (1) WO2000075989A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555883B1 (en) * 2001-10-29 2003-04-29 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US6890804B1 (en) * 2003-11-21 2005-05-10 Agere Systems, Inc. Metal-oxide-semiconductor device formed in silicon-on-insulator
US20050274985A1 (en) * 2004-05-26 2005-12-15 Adlerstein Michael G RF decoupled field plate for FETs
US7262476B2 (en) * 2004-11-30 2007-08-28 Agere Systems Inc. Semiconductor device having improved power density
JP4890793B2 (ja) * 2005-06-09 2012-03-07 トヨタ自動車株式会社 半導体装置の製造方法
US7655977B2 (en) * 2005-10-18 2010-02-02 International Rectifier Corporation Trench IGBT for highly capacitive loads
JP4989085B2 (ja) * 2006-02-24 2012-08-01 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP5307973B2 (ja) * 2006-02-24 2013-10-02 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
DE102006033692B4 (de) * 2006-07-20 2011-01-05 Austriamicrosystems Ag Verfahren zur Herstellung eines strukturierten Dielektrikums für einen LDMOS-Transistor
DE102006055742B4 (de) * 2006-11-25 2011-07-14 Infineon Technologies Austria Ag Halbleiterbauelementanordnung mit mehreren zu einer Driftzone benachbart angeordneten Steuerelektroden
JP5699420B2 (ja) * 2008-06-16 2015-04-08 富士電機株式会社 Ｍｏｓ型半導体装置
CN102456578B (zh) * 2010-11-03 2013-09-04 凹凸电子（武汉）有限公司 高压晶体管及其制造方法
US8598679B2 (en) * 2010-11-30 2013-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked and tunable power fuse
EP2715298B1 (de) 2011-06-03 2017-04-19 Vlaamse Instelling voor Technologisch Onderzoek (VITO) Verfahren zum puffern thermischer energie und thermisches energiepuffersystem
JP5637188B2 (ja) * 2011-09-27 2014-12-10 株式会社デンソー 横型素子を有する半導体装置
CA2878975C (en) * 2012-07-27 2020-12-22 Praevium Research, Inc. Amplified widely tunable short cavity laser
GB2511559B (en) 2013-03-07 2018-11-14 Mondelez Uk R&D Ltd Improved Packaging and Method of Forming Packaging
WO2015104900A1 (ja) * 2014-01-10 2015-07-16 三菱電機株式会社 半導体装置
JP6550674B2 (ja) * 2015-08-13 2019-07-31 ローム株式会社 半導体装置
JP6710627B2 (ja) * 2016-12-20 2020-06-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1260618A (en) * 1969-08-09 1972-01-19 Soc Gen Semiconduttori Spa Planar junctions with integrated resistor, for high voltages
FR2454233B1 (fr) * 1979-04-11 1986-01-24 Materiel Telephonique Demodulateur stochastique pour signaux modules en sauts de phase, fonctionnant en temps partage sur plusieurs canaux
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
DE3112467A1 (de) * 1981-03-28 1982-12-30 Robert Bosch Gmbh, 7000 Stuttgart "kraftstoff-einspritzduese fuer brennkraftmaschinen"
GB2167229B (en) * 1984-11-21 1988-07-20 Philips Electronic Associated Semiconductor devices
JPH0653981B2 (ja) * 1987-01-23 1994-07-20 株式会社日立製作所 リング精紡機
US5107323A (en) * 1988-12-22 1992-04-21 At&T Bell Laboratories Protective layer for high voltage devices
JP2850694B2 (ja) * 1993-03-10 1999-01-27 株式会社日立製作所 高耐圧プレーナ型半導体装置

Also Published As

Publication number Publication date
KR100722012B1 (ko) 2007-05-25
EP1116273B1 (de) 2006-07-26
US6608351B1 (en) 2003-08-19
KR20010072193A (ko) 2001-07-31
WO2000075989A1 (en) 2000-12-14
JP2003501837A (ja) 2003-01-14
EP1116273A1 (de) 2001-07-18
DE60029554T2 (de) 2007-07-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL