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GB1260618A - Planar junctions with integrated resistor, for high voltages - Google Patents

Planar junctions with integrated resistor, for high voltages

Info

Publication number
GB1260618A
GB1260618A GB24140/70A GB2414070A GB1260618A GB 1260618 A GB1260618 A GB 1260618A GB 24140/70 A GB24140/70 A GB 24140/70A GB 2414070 A GB2414070 A GB 2414070A GB 1260618 A GB1260618 A GB 1260618A
Authority
GB
United Kingdom
Prior art keywords
layer
junction
semi
conductor
weakly conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24140/70A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SGS Societa Generale Semiconduttori SpA
Original Assignee
SGS Societa Generale Semiconduttori SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Societa Generale Semiconduttori SpA filed Critical SGS Societa Generale Semiconduttori SpA
Publication of GB1260618A publication Critical patent/GB1260618A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H10W20/40—
    • H10W74/40—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)

Abstract

1,260,618. Semi-conductor devices. SOC. GENERALE SEMICONDUTTORI S.p.A. SGS. 19 May, 1970 [9 Aug., 1969], No. 24140/70. Heading H1K. A thin layer 11 of weakly conducting material overlying an oxide layer 5 interconnects opposite sides of a planar PN junction 8, 9 which emerges at a surface of a semi-conductor body 4 below the oxide layer 5. The layer 11 provides a distributed electrostatic potential in the surface of the body 4, and improves the breakdown characteristic of the junction 8, 9. The body 4 may be of Si, the junction 8, 9 being formed by oxide-masked diffusion of B from vapour. The thickness of the weakly conducting layer 11 may vary as shown to control its resistance, or the same effect may be obtained by varying its surface configuration along its length. Discrete highly conductive areas (13a-13d), Figs. 4 and 5 (not shown), may be provided above or below the weakly conducting layer to modify the potential distribution induced in the semi-conductor. The invention is applicable to integrated circuits, diodes, transistors and thyristors.
GB24140/70A 1969-08-09 1970-05-19 Planar junctions with integrated resistor, for high voltages Expired GB1260618A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT5295669 1969-08-09

Publications (1)

Publication Number Publication Date
GB1260618A true GB1260618A (en) 1972-01-19

Family

ID=11278832

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24140/70A Expired GB1260618A (en) 1969-08-09 1970-05-19 Planar junctions with integrated resistor, for high voltages

Country Status (4)

Country Link
DE (1) DE2031082C2 (en)
FR (1) FR2070661B1 (en)
GB (1) GB1260618A (en)
NL (1) NL168654C (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0615291B1 (en) * 1993-03-10 1997-05-21 Hitachi, Ltd. A high breakdown voltage semiconductor device having a semi-insulating layer
WO2000075989A1 (en) * 1999-06-03 2000-12-14 Koninklijke Philips Electronics N.V. Semiconductor device comprising a high-voltage circuit element

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE785747A (en) * 1971-07-02 1973-01-02 Philips Nv SEMICONDUCTOR DEVICE
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
JPS5218070B2 (en) * 1972-10-04 1977-05-19
US4009483A (en) * 1974-04-04 1977-02-22 Motorola, Inc. Implementation of surface sensitive semiconductor devices
JPS51111069A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor device
GB2011178B (en) * 1977-12-15 1982-03-17 Philips Electronic Associated Fieldeffect devices
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
DE3520599A1 (en) * 1984-06-15 1985-12-19 Rca Corp., Princeton, N.J. Semiconductor component
GB2167229B (en) * 1984-11-21 1988-07-20 Philips Electronic Associated Semiconductor devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA941074A (en) * 1964-04-16 1974-01-29 Northern Electric Company Limited Semiconductor devices with field electrodes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0615291B1 (en) * 1993-03-10 1997-05-21 Hitachi, Ltd. A high breakdown voltage semiconductor device having a semi-insulating layer
WO2000075989A1 (en) * 1999-06-03 2000-12-14 Koninklijke Philips Electronics N.V. Semiconductor device comprising a high-voltage circuit element

Also Published As

Publication number Publication date
FR2070661B1 (en) 1974-03-22
NL168654B (en) 1981-11-16
FR2070661A1 (en) 1971-09-17
NL168654C (en) 1982-04-16
NL7009259A (en) 1971-02-11
DE2031082C2 (en) 1983-02-17
DE2031082A1 (en) 1971-04-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years