DE60143340D1 - Integrierte Halbleiterschaltung mit reduziertem Leckstrom - Google Patents

Integrierte Halbleiterschaltung mit reduziertem Leckstrom

Info

Publication number: DE60143340D1
Authority: DE; Germany
Prior art keywords: leakage current; semiconductor circuit; integrated semiconductor; reduced leakage; reduced
Prior art date: 2000-09-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE60143340T

Other languages

English (en)

Inventor

Toshiyuki Furusawa

Daisuke Sonoda

Kimiyoshi Usami

Naoyuki Kawabe

Masayuki Koizumi

Hidemasa Zama

Masahiro Kanazawa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-09-27

Filing date

2001-09-21

Publication date

2010-12-09

2001-09-21 Application filed by Toshiba Corp filed Critical Toshiba Corp

2010-12-09 Application granted granted Critical

2010-12-09 Publication of DE60143340D1 publication Critical patent/DE60143340D1/de

2021-09-22 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Computing Systems (AREA)
General Engineering & Computer Science (AREA)
Mathematical Physics (AREA)
Logic Circuits (AREA)
Semiconductor Integrated Circuits (AREA)
Electronic Switches (AREA)

DE60143340T 2000-09-27 2001-09-21 Integrierte Halbleiterschaltung mit reduziertem Leckstrom Expired - Lifetime DE60143340D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2000295234A JP3727838B2 (ja)	2000-09-27	2000-09-27	半導体集積回路

Publications (1)

Publication Number	Publication Date
DE60143340D1 true DE60143340D1 (de)	2010-12-09

Family

ID=18777692

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE60143340T Expired - Lifetime DE60143340D1 (de)	2000-09-27	2001-09-21	Integrierte Halbleiterschaltung mit reduziertem Leckstrom

Country Status (7)

Country	Link
US (4)	US6586982B2 (de)
EP (1)	EP1195902B1 (de)
JP (1)	JP3727838B2 (de)
KR (1)	KR100447771B1 (de)
CN (1)	CN100340063C (de)
DE (1)	DE60143340D1 (de)
TW (1)	TW517455B (de)

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2000
- 2000-09-27 JP JP2000295234A patent/JP3727838B2/ja not_active Expired - Fee Related
2001
- 2001-07-10 TW TW090116815A patent/TW517455B/zh not_active IP Right Cessation
- 2001-09-11 CN CNB011329254A patent/CN100340063C/zh not_active Expired - Fee Related
- 2001-09-21 EP EP01122513A patent/EP1195902B1/de not_active Expired - Lifetime
- 2001-09-21 US US09/961,027 patent/US6586982B2/en not_active Expired - Fee Related
- 2001-09-21 DE DE60143340T patent/DE60143340D1/de not_active Expired - Lifetime
- 2001-09-26 KR KR10-2001-0059551A patent/KR100447771B1/ko not_active Expired - Fee Related
2003
- 2003-01-14 US US10/342,045 patent/US6861882B2/en not_active Expired - Fee Related
2004
- 2004-09-21 US US10/946,398 patent/US7109771B2/en not_active Expired - Fee Related
- 2004-09-23 US US10/948,349 patent/US7088161B2/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US20030102898A1 (en)	2003-06-05
CN1347197A (zh)	2002-05-01
KR100447771B1 (ko)	2004-09-08
TW517455B (en)	2003-01-11
US6586982B2 (en)	2003-07-01
US7109771B2 (en)	2006-09-19
US6861882B2 (en)	2005-03-01
US20020036529A1 (en)	2002-03-28
US20050035803A1 (en)	2005-02-17
EP1195902B1 (de)	2010-10-27
EP1195902A2 (de)	2002-04-10
US7088161B2 (en)	2006-08-08
JP2002110920A (ja)	2002-04-12
US20050035802A1 (en)	2005-02-17
JP3727838B2 (ja)	2005-12-21
CN100340063C (zh)	2007-09-26
KR20020025035A (ko)	2002-04-03
EP1195902A3 (de)	2003-05-21

Publication	Publication Date	Title
DE60143340D1 (de)	2010-12-09	Integrierte Halbleiterschaltung mit reduziertem Leckstrom
DE60100723D1 (de)	2003-10-16	Integrierte Halbleiterschaltung mit niedrigem Leistungsverbrauch
DE60143643D1 (de)	2011-01-27	Integriertes halbleiterschaltungsbauelement
DE69943120D1 (de)	2011-02-24	Integrierte Halbleiterschaltung
DE69927658D1 (de)	2005-11-17	Integrierte Halbleiterschaltung
DE60135728D1 (de)	2008-10-23	Integrierte Halbleiterschaltung
DE60136415D1 (de)	2008-12-18	Leistungshalbleiter-Schaltelement
DE60214452D1 (de)	2006-10-19	Stromreferenzschaltung
DE60123185D1 (de)	2006-11-02	Halbleiterlaservorrichtung mit niedrigerem Schwellstrom
NO20022736D0 (no)	2002-06-07	Kretsinnkapsling med en integrert dobbelbrikke
DE10196994T1 (de)	2003-11-13	Hochgeschwindigkeits-Stromschalterschaltung
GB2372601B (en)	2003-09-24	Semiconductor integrated circuit
DE60025067D1 (de)	2006-02-02	Cmos Halbleiter integrierte Schaltung
DE60140691D1 (de)	2010-01-14	Halbleiterdiodenbauelement
DE69930586D1 (de)	2006-05-18	Integrierte Halbleiterspeicherschaltung
DE69920486D1 (de)	2004-10-28	Halbleiterschaltung
DE69940590D1 (de)	2009-04-30	Integrierter Schaltkreis mit induktiven Elementen
DE60029554D1 (de)	2006-09-07	Halbleiterbauelement mit hochspannungselement
DE69909375D1 (de)	2003-08-14	Integrierte Schaltungsanordnung
DE60114346D1 (de)	2005-12-01	Schaltnetzteilschaltung
DE50107889D1 (de)	2005-12-08	Integrierter Schaltkreis mit Selbsttest-Schaltung
DE60110363D1 (de)	2005-06-02	Referenzspannungserzeugungsschaltung
DE60133851D1 (de)	2008-06-19	Leistungshalbleiterbauelement mit Schutzschaltkreis
DE60030391D1 (de)	2006-10-12	Halbleiterschaltung mit Prüfungsfähigkeit
DE60042381D1 (de)	2009-07-30	Integrierte Halbleiterschaltungsanordnung