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DE202004021352U8 - Leistungshalbleitervorrichtungen - Google Patents

Leistungshalbleitervorrichtungen Download PDF

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Publication number
DE202004021352U8
DE202004021352U8 DE202004021352U DE202004021352U DE202004021352U8 DE 202004021352 U8 DE202004021352 U8 DE 202004021352U8 DE 202004021352 U DE202004021352 U DE 202004021352U DE 202004021352 U DE202004021352 U DE 202004021352U DE 202004021352 U8 DE202004021352 U8 DE 202004021352U8
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DE
Germany
Prior art keywords
semiconductor devices
power semiconductor
power
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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DE202004021352U
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English (en)
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DE202004021352U1 (de
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Fairchild Semiconductor Corp
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Fairchild Semiconductor Corp
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Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of DE202004021352U1 publication Critical patent/DE202004021352U1/de
Publication of DE202004021352U8 publication Critical patent/DE202004021352U8/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/669—Vertical DMOS [VDMOS] FETs having voltage-sensing or current-sensing structures, e.g. emulator sections or overcurrent sensing cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H10P30/204—
    • H10P30/208—
    • H10P30/222—
    • H10W90/726—
DE202004021352U 2003-12-30 2004-12-29 Leistungshalbleitervorrichtungen Expired - Lifetime DE202004021352U1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US53379003P 2003-12-30 2003-12-30
US60/533,790 2003-12-30
US58884504P 2004-07-15 2004-07-15
US60/588,845 2004-07-15
PCT/US2004/043965 WO2005065385A2 (en) 2003-12-30 2004-12-28 Power semiconductor devices and methods of manufacture

Publications (2)

Publication Number Publication Date
DE202004021352U1 DE202004021352U1 (de) 2007-08-16
DE202004021352U8 true DE202004021352U8 (de) 2008-02-21

Family

ID=34753010

Family Applications (3)

Application Number Title Priority Date Filing Date
DE202004021352U Expired - Lifetime DE202004021352U1 (de) 2003-12-30 2004-12-29 Leistungshalbleitervorrichtungen
DE112004003046.3T Expired - Fee Related DE112004003046B4 (de) 2003-12-30 2004-12-29 Leistungshalbleitervorrichtungen
DE112004002608.3T Expired - Fee Related DE112004002608B4 (de) 2003-12-30 2004-12-29 Leistungshalbleitervorrichtungen und Herstellungsverfahren

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE112004003046.3T Expired - Fee Related DE112004003046B4 (de) 2003-12-30 2004-12-29 Leistungshalbleitervorrichtungen
DE112004002608.3T Expired - Fee Related DE112004002608B4 (de) 2003-12-30 2004-12-29 Leistungshalbleitervorrichtungen und Herstellungsverfahren

Country Status (6)

Country Link
JP (3) JP4903055B2 (de)
KR (2) KR20070032627A (de)
CN (3) CN103199017B (de)
DE (3) DE202004021352U1 (de)
TW (3) TWI404220B (de)
WO (1) WO2005065385A2 (de)

Families Citing this family (338)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6838722B2 (en) 2002-03-22 2005-01-04 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
CN103199017B (zh) * 2003-12-30 2016-08-03 飞兆半导体公司 形成掩埋导电层方法、材料厚度控制法、形成晶体管方法
US7183610B2 (en) * 2004-04-30 2007-02-27 Siliconix Incorporated Super trench MOSFET including buried source electrode and method of fabricating the same
JP5135663B2 (ja) * 2004-10-21 2013-02-06 富士電機株式会社 半導体装置およびその製造方法
US7453119B2 (en) 2005-02-11 2008-11-18 Alphs & Omega Semiconductor, Ltd. Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
JP4955222B2 (ja) * 2005-05-20 2012-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
WO2006135746A2 (en) * 2005-06-10 2006-12-21 Fairchild Semiconductor Corporation Charge balance field effect transistor
JP4921730B2 (ja) * 2005-06-20 2012-04-25 株式会社東芝 半導体装置
EP1908119B1 (de) * 2005-07-27 2012-04-18 Infineon Technologies Austria AG Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
US8110868B2 (en) 2005-07-27 2012-02-07 Infineon Technologies Austria Ag Power semiconductor component with a low on-state resistance
US8461648B2 (en) 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
DE102006002065B4 (de) * 2006-01-16 2007-11-29 Infineon Technologies Austria Ag Kompensationsbauelement mit reduziertem und einstellbarem Einschaltwiderstand
US7595542B2 (en) * 2006-03-13 2009-09-29 Fairchild Semiconductor Corporation Periphery design for charge balance power devices
US7446374B2 (en) * 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
DE102006026943B4 (de) 2006-06-09 2011-01-05 Infineon Technologies Austria Ag Mittels Feldeffekt steuerbarer Trench-Transistor mit zwei Steuerelektroden
US8432012B2 (en) * 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
US7544571B2 (en) * 2006-09-20 2009-06-09 Fairchild Semiconductor Corporation Trench gate FET with self-aligned features
JP2008153620A (ja) * 2006-11-21 2008-07-03 Toshiba Corp 半導体装置
US9437729B2 (en) 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US9947770B2 (en) 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
DE102007020657B4 (de) * 2007-04-30 2012-10-04 Infineon Technologies Austria Ag Halbleiterbauelement mit einem Halbleiterkörper und Verfahren zur Herstellung desselben
GB2457410B (en) * 2007-06-22 2012-01-04 Panasonic Corp Plasma display panel driving device and plasma display
JP5285242B2 (ja) * 2007-07-04 2013-09-11 ローム株式会社 半導体装置
KR100847642B1 (ko) * 2007-08-10 2008-07-21 주식회사 동부하이텍 파티클 발생 방지를 위한 포토 키 처리방법
US8497549B2 (en) * 2007-08-21 2013-07-30 Fairchild Semiconductor Corporation Method and structure for shielded gate trench FET
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
ATE515064T1 (de) 2007-10-29 2011-07-15 Nxp Bv Graben-gate-mosfet und verfahren zu dessen herstellung
JP2009164558A (ja) * 2007-12-10 2009-07-23 Toyota Central R&D Labs Inc 半導体装置とその製造方法、並びにトレンチゲートの製造方法
JP5481030B2 (ja) 2008-01-30 2014-04-23 ルネサスエレクトロニクス株式会社 半導体装置
US7833862B2 (en) 2008-03-03 2010-11-16 Infineon Technologies Austria Ag Semiconductor device and method for forming same
US7952166B2 (en) 2008-05-22 2011-05-31 Infineon Technologies Austria Ag Semiconductor device with switch electrode and gate electrode and method for switching a semiconductor device
US7786600B2 (en) 2008-06-30 2010-08-31 Hynix Semiconductor Inc. Circuit substrate having circuit wire formed of conductive polarization particles, method of manufacturing the circuit substrate and semiconductor package having the circuit wire
US7936009B2 (en) * 2008-07-09 2011-05-03 Fairchild Semiconductor Corporation Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein
EP2329516A4 (de) 2008-08-28 2013-04-24 Memc Electronic Materials Bulk-siliziumwaferprodukt zur herstellung dreidimensionaler multigate-mosfets
TWI414019B (zh) * 2008-09-11 2013-11-01 He Jian Technology Suzhou Co Ltd 一種閘氧化層的製造方法
KR101174302B1 (ko) * 2008-10-14 2012-08-16 미쓰비시덴키 가부시키가이샤 파워 디바이스
US7915672B2 (en) * 2008-11-14 2011-03-29 Semiconductor Components Industries, L.L.C. Semiconductor device having trench shield electrode structure
JP5195357B2 (ja) * 2008-12-01 2013-05-08 トヨタ自動車株式会社 半導体装置
US8158456B2 (en) * 2008-12-05 2012-04-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming stacked dies
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8304829B2 (en) 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8188484B2 (en) * 2008-12-25 2012-05-29 Rohm Co., Ltd. Semiconductor device
US8188538B2 (en) 2008-12-25 2012-05-29 Rohm Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US8148749B2 (en) * 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US8723259B2 (en) 2009-02-24 2014-05-13 Mitsubishi Electric Corporation Silicon carbide semiconductor device
US7989885B2 (en) * 2009-02-26 2011-08-02 Infineon Technologies Austria Ag Semiconductor device having means for diverting short circuit current arranged in trench and method for producing same
WO2010111825A1 (en) * 2009-03-30 2010-10-07 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Electronic package and method of fabrication thereof
US7952141B2 (en) * 2009-07-24 2011-05-31 Fairchild Semiconductor Corporation Shield contacts in a shielded gate MOSFET
JP4998524B2 (ja) * 2009-07-24 2012-08-15 サンケン電気株式会社 半導体装置
JP5402395B2 (ja) * 2009-08-21 2014-01-29 オムロン株式会社 静電誘導型発電装置
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9425306B2 (en) 2009-08-27 2016-08-23 Vishay-Siliconix Super junction trench power MOSFET devices
US8981434B2 (en) 2009-08-31 2015-03-17 Renesas Electronics Corporation Semiconductor device and field effect transistor
CN103367452B (zh) * 2009-09-11 2015-11-25 中芯国际集成电路制造(上海)有限公司 绿色晶体管、电阻随机存储器及其驱动方法
US8421162B2 (en) 2009-09-30 2013-04-16 Suvolta, Inc. Advanced transistors with punch through suppression
US8273617B2 (en) 2009-09-30 2012-09-25 Suvolta, Inc. Electronic devices and systems, and methods for making and using the same
US9425305B2 (en) * 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
CN102790091B (zh) * 2009-10-20 2015-04-01 中芯国际集成电路制造(上海)有限公司 绿色晶体管、纳米硅铁电存储器及其驱动方法
US9419129B2 (en) 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
US8421196B2 (en) 2009-11-25 2013-04-16 Infineon Technologies Austria Ag Semiconductor device and manufacturing method
US8174070B2 (en) 2009-12-02 2012-05-08 Alpha And Omega Semiconductor Incorporated Dual channel trench LDMOS transistors and BCD process with deep trench isolation
US8198678B2 (en) 2009-12-09 2012-06-12 Infineon Technologies Austria Ag Semiconductor device with improved on-resistance
CN102130006B (zh) * 2010-01-20 2013-12-18 上海华虹Nec电子有限公司 沟槽型双层栅功率mos晶体管的制备方法
JP5762689B2 (ja) 2010-02-26 2015-08-12 株式会社東芝 半導体装置
JP5736394B2 (ja) 2010-03-02 2015-06-17 ヴィシェイ−シリコニックス 半導体装置の構造及びその製造方法
CN102194880B (zh) * 2010-03-05 2015-01-14 万国半导体股份有限公司 带有沟槽-氧化物-纳米管超级结的器件结构及制备方法
TWI407531B (zh) * 2010-03-05 2013-09-01 Great Power Semiconductor Corp 具有蕭特基二極體之功率半導體結構及其製造方法
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8367501B2 (en) * 2010-03-24 2013-02-05 Alpha & Omega Semiconductor, Inc. Oxide terminated trench MOSFET with three or four masks
TWI419237B (zh) * 2010-04-27 2013-12-11 Great Power Semiconductor Corp 低閘極阻抗之功率半導體結構的製造方法
CN102254944A (zh) * 2010-05-21 2011-11-23 上海新进半导体制造有限公司 一种沟槽mosfet功率整流器件及制造方法
US8319282B2 (en) 2010-07-09 2012-11-27 Infineon Technologies Austria Ag High-voltage bipolar transistor with trench field plate
CN102376758B (zh) * 2010-08-12 2014-02-26 上海华虹宏力半导体制造有限公司 绝缘栅双极晶体管、制作方法及沟槽栅结构制作方法
EP2421046A1 (de) * 2010-08-16 2012-02-22 Nxp B.V. MOSFET mit einem Kapazitätskontrollbereich
CN102386182B (zh) * 2010-08-27 2014-11-05 万国半导体股份有限公司 在分立的功率mos场效应管集成传感场效应管的器件及方法
JP2012060063A (ja) 2010-09-13 2012-03-22 Toshiba Corp 半導体装置及びその製造方法
JP2012064641A (ja) * 2010-09-14 2012-03-29 Toshiba Corp 半導体装置
DE102010043088A1 (de) * 2010-10-29 2012-05-03 Robert Bosch Gmbh Halbleiteranordnung mit Schottkydiode
US8580667B2 (en) * 2010-12-14 2013-11-12 Alpha And Omega Semiconductor Incorporated Self aligned trench MOSFET with integrated diode
TWI414069B (zh) * 2011-01-05 2013-11-01 Anpec Electronics Corp Power transistor with low interface of low Miller capacitor and its making method
JP5556799B2 (ja) * 2011-01-12 2014-07-23 株式会社デンソー 半導体装置
US8313995B2 (en) 2011-01-13 2012-11-20 Infineon Technologies Austria Ag Method for manufacturing a semiconductor device
DE102011003456A1 (de) 2011-02-01 2012-08-02 Robert Bosch Gmbh Halbleiteranordnung mit reduziertem Einschaltwiderstand
JP2012204395A (ja) * 2011-03-23 2012-10-22 Toshiba Corp 半導体装置およびその製造方法
JP2012204529A (ja) * 2011-03-24 2012-10-22 Toshiba Corp 半導体装置及びその製造方法
JP2012204636A (ja) 2011-03-25 2012-10-22 Toshiba Corp 半導体装置およびその製造方法
TW201240087A (en) * 2011-03-30 2012-10-01 Anpec Electronics Corp Power device with boundary trench structure
US8823089B2 (en) * 2011-04-15 2014-09-02 Infineon Technologies Ag SiC semiconductor power device
KR101851821B1 (ko) * 2011-05-05 2018-06-11 에이비비 슈바이쯔 아게 바이폴라 펀치 쓰루 반도체 디바이스 및 그러한 반도체 디바이스의 제조 방법
DE112012002136B4 (de) * 2011-05-18 2025-03-27 Vishay-Siliconix Halbleitervorrichtungen
US8884340B2 (en) 2011-05-25 2014-11-11 Samsung Electronics Co., Ltd. Semiconductor devices including dual gate electrode structures and related methods
JP5677222B2 (ja) * 2011-07-25 2015-02-25 三菱電機株式会社 炭化珪素半導体装置
CN102916043B (zh) * 2011-08-03 2015-07-22 中国科学院微电子研究所 Mos-hemt器件及其制作方法
US8981748B2 (en) * 2011-08-08 2015-03-17 Semiconductor Components Industries, Llc Method of forming a semiconductor power switching device, structure therefor, and power converter
CN102956640A (zh) * 2011-08-22 2013-03-06 大中积体电路股份有限公司 双导通半导体组件及其制作方法
JP2013058575A (ja) * 2011-09-07 2013-03-28 Toshiba Corp 半導体装置及びその製造方法
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9184255B2 (en) * 2011-09-30 2015-11-10 Infineon Technologies Austria Ag Diode with controllable breakdown voltage
US8659126B2 (en) * 2011-12-07 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit ground shielding structure
JP5742668B2 (ja) * 2011-10-31 2015-07-01 三菱電機株式会社 炭化珪素半導体装置
JP2013115225A (ja) * 2011-11-29 2013-06-10 Toshiba Corp 電力用半導体装置およびその製造方法
KR101275458B1 (ko) * 2011-12-26 2013-06-17 삼성전기주식회사 반도체 소자 및 그 제조 방법
JP5720582B2 (ja) 2012-01-12 2015-05-20 トヨタ自動車株式会社 スイッチング素子
US9082746B2 (en) * 2012-01-16 2015-07-14 Infineon Technologies Austria Ag Method for forming self-aligned trench contacts of semiconductor components and a semiconductor component
JP5848142B2 (ja) * 2012-01-25 2016-01-27 ルネサスエレクトロニクス株式会社 縦型プレーナパワーｍｏｓｆｅｔの製造方法
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
CN104106142B (zh) * 2012-02-10 2016-03-09 松下知识产权经营株式会社 半导体装置及其制造方法
JP5856868B2 (ja) * 2012-02-17 2016-02-10 国立大学法人九州工業大学 同一基板へのｃｍｏｓ及びトレンチダイオードの作製方法
US9159786B2 (en) 2012-02-20 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Dual gate lateral MOSFET
US8866222B2 (en) 2012-03-07 2014-10-21 Infineon Technologies Austria Ag Charge compensation semiconductor device
CN103378159B (zh) * 2012-04-20 2016-08-03 英飞凌科技奥地利有限公司 具有mosfet的晶体管装置和制造方法
CN103377922B (zh) * 2012-04-23 2015-12-16 中芯国际集成电路制造(上海)有限公司 一种鳍式场效应晶体管及其形成方法
CN104541374A (zh) * 2012-04-30 2015-04-22 维西埃-硅化物公司 半导体器件
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US8884369B2 (en) * 2012-06-01 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical power MOSFET and methods of forming the same
US20130320512A1 (en) 2012-06-05 2013-12-05 Infineon Technologies Austria Ag Semiconductor Device and Method of Manufacturing a Semiconductor Device
US8680614B2 (en) * 2012-06-12 2014-03-25 Monolithic Power Systems, Inc. Split trench-gate MOSFET with integrated Schottky diode
ITMI20121123A1 (it) * 2012-06-26 2013-12-27 St Microelectronics Srl Transistore mos a gate verticale con accesso ad armatura di campo
US9293376B2 (en) 2012-07-11 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for power MOS transistor
CN104241341A (zh) * 2012-07-27 2014-12-24 俞国庆 一种高频低功耗的功率mos场效应管器件
JP2014027182A (ja) * 2012-07-27 2014-02-06 Toshiba Corp 半導体装置
JP5715604B2 (ja) 2012-09-12 2015-05-07 株式会社東芝 電力用半導体素子
US9059256B2 (en) 2012-09-13 2015-06-16 Infineon Technologies Ag Method for producing a controllable semiconductor component
JP5802636B2 (ja) * 2012-09-18 2015-10-28 株式会社東芝 半導体装置およびその製造方法
JP5867617B2 (ja) * 2012-10-17 2016-02-24 富士電機株式会社 半導体装置
JP2014099484A (ja) * 2012-11-13 2014-05-29 Toshiba Corp 半導体装置
CN103855047B (zh) * 2012-12-04 2016-10-26 上海华虹宏力半导体制造有限公司 深沟槽产品的物理分析结构及方法
US9853140B2 (en) 2012-12-31 2017-12-26 Vishay-Siliconix Adaptive charge balanced MOSFET techniques
CN103011550B (zh) * 2013-01-16 2013-11-13 四川亿思通科技工程有限公司 污泥冻溶脱水处理系统及其处理方法
KR101392587B1 (ko) * 2013-02-19 2014-05-27 주식회사 동부하이텍 고전압 정전기 방전 보호 소자
JP6143490B2 (ja) 2013-02-19 2017-06-07 ローム株式会社 半導体装置およびその製造方法
JP6164604B2 (ja) 2013-03-05 2017-07-19 ローム株式会社 半導体装置
JP6164636B2 (ja) 2013-03-05 2017-07-19 ローム株式会社 半導体装置
KR102011933B1 (ko) * 2013-03-06 2019-08-20 삼성전자 주식회사 비휘발성 메모리 소자 제조 방법
JP2014187141A (ja) 2013-03-22 2014-10-02 Toshiba Corp 半導体装置
JP5784665B2 (ja) 2013-03-22 2015-09-24 株式会社東芝 半導体装置の製造方法
US20140306284A1 (en) * 2013-04-12 2014-10-16 Infineon Technologies Austria Ag Semiconductor Device and Method for Producing the Same
JP2014216572A (ja) 2013-04-26 2014-11-17 株式会社東芝 半導体装置
TWI514578B (zh) * 2013-06-21 2015-12-21 Chip Integration Tech Co Ltd 雙溝渠式整流器及其製造方法
TWI511293B (zh) * 2013-06-24 2015-12-01 Chip Integration Tech Co Ltd 雙溝渠式ｍｏｓ電晶體結構及其製造方法
US9112022B2 (en) * 2013-07-31 2015-08-18 Infineon Technologies Austria Ag Super junction structure having a thickness of first and second semiconductor regions which gradually changes from a transistor area into a termination area
CN104347376B (zh) * 2013-08-05 2017-04-26 台湾茂矽电子股份有限公司 于金属氧化物半导体场效应晶体管中形成遮蔽栅极的方法
KR102036386B1 (ko) * 2013-08-20 2019-10-25 한국전력공사 전기비저항을 이용한 지중 자원 모니터링 방법
JP6197995B2 (ja) * 2013-08-23 2017-09-20 富士電機株式会社 ワイドバンドギャップ絶縁ゲート型半導体装置
JP2015056492A (ja) * 2013-09-11 2015-03-23 株式会社東芝 半導体装置
CN104465603A (zh) * 2013-09-23 2015-03-25 台达电子企业管理（上海）有限公司 功率模块
US9525058B2 (en) * 2013-10-30 2016-12-20 Infineon Technologies Austria Ag Integrated circuit and method of manufacturing an integrated circuit
CN104282750B (zh) * 2013-11-20 2017-07-21 沈阳工业大学 主辅栅分立控制u形沟道无掺杂场效应晶体管
CN104282751B (zh) * 2013-11-20 2017-07-21 沈阳工业大学 高集成度高迁移率源漏栅辅控型无结晶体管
CN103887286A (zh) * 2013-11-29 2014-06-25 杭州恩能科技有限公司 一种具有提高抗浪涌电流能力的半导体装置
JP6271440B2 (ja) 2014-01-31 2018-01-31 ルネサスエレクトロニクス株式会社 半導体装置
JP6226786B2 (ja) 2014-03-19 2017-11-08 三菱電機株式会社 半導体装置およびその製造方法
KR102156130B1 (ko) * 2014-04-10 2020-09-15 삼성전자주식회사 반도체 소자 형성 방법
DE102014106825B4 (de) 2014-05-14 2019-06-27 Infineon Technologies Ag Halbleitervorrichtung
TWI555208B (zh) * 2014-05-20 2016-10-21 力祥半導體股份有限公司 線型架構之功率半導體元件
CN105097570B (zh) * 2014-05-21 2017-12-19 北大方正集团有限公司 钝化层制造方法及高压半导体功率器件
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
WO2015198435A1 (ja) * 2014-06-26 2015-12-30 三菱電機株式会社 半導体装置
CN105448893B (zh) * 2014-06-30 2017-12-15 苏州远创达科技有限公司 一种半导体器件中的静电放电保护结构及半导体器件
WO2016006263A1 (ja) * 2014-07-11 2016-01-14 新電元工業株式会社 半導体装置及び半導体装置の製造方法
DE102014109926A1 (de) * 2014-07-15 2016-01-21 Infineon Technologies Austria Ag Halbleitervorrichtung mit einer Vielzahl von Transistorzellen und Herstellungsverfahren
KR101621150B1 (ko) 2014-07-21 2016-05-13 주식회사 케이이씨 전력 정류 디바이스
KR101621151B1 (ko) 2014-07-21 2016-05-13 주식회사 케이이씨 전력 정류 디바이스
KR102098996B1 (ko) 2014-08-19 2020-04-08 비쉐이-실리코닉스 초접합 금속 산화물 반도체 전계 효과 트랜지스터
KR102026543B1 (ko) 2014-08-19 2019-09-27 비쉐이-실리코닉스 전자 회로
DE102014112379B4 (de) * 2014-08-28 2025-07-17 Infineon Technologies Austria Ag Halbleitervorrichtung, elektronische anordnung und verfahren zum herstellen einer halbleitervorrichtung
DE102014112338A1 (de) 2014-08-28 2016-03-03 Infineon Technologies Austria Ag Halbleiterbauelement und Verfahren zum Herstellen eines Halbleiterbauelements
JP2016096165A (ja) * 2014-11-12 2016-05-26 サンケン電気株式会社 半導体装置
US9515177B2 (en) * 2014-11-25 2016-12-06 Infineon Technologies Ag Vertically integrated semiconductor device and manufacturing method
US9443973B2 (en) 2014-11-26 2016-09-13 Infineon Technologies Austria Ag Semiconductor device with charge compensation region underneath gate trench
JP6299581B2 (ja) 2014-12-17 2018-03-28 三菱電機株式会社 半導体装置
DE102014226161B4 (de) 2014-12-17 2017-10-26 Infineon Technologies Ag Halbleitervorrichtung mit Überlaststrombelastbarkeit
JP6526981B2 (ja) 2015-02-13 2019-06-05 ローム株式会社 半導体装置および半導体モジュール
JP6224257B2 (ja) * 2015-02-20 2017-11-01 新電元工業株式会社 半導体装置
JP2016167519A (ja) 2015-03-09 2016-09-15 株式会社東芝 半導体装置
DE102015204315B4 (de) 2015-03-11 2018-06-28 Infineon Technologies Ag Sensor für ein Halbleiterbauelement
CN106033781A (zh) * 2015-03-16 2016-10-19 中航（重庆）微电子有限公司 肖特基势垒二极管及其制备方法
CN104733535A (zh) * 2015-03-17 2015-06-24 北京中科新微特科技开发股份有限公司 一种功率mosfet
JP2016181618A (ja) 2015-03-24 2016-10-13 株式会社デンソー 半導体装置
JP2016181617A (ja) 2015-03-24 2016-10-13 株式会社デンソー 半導体装置
DE102015105758A1 (de) * 2015-04-15 2016-10-20 Infineon Technologies Ag Halbleiterbauelement und herstellungsverfahren
US9299830B1 (en) * 2015-05-07 2016-03-29 Texas Instruments Incorporated Multiple shielding trench gate fet
TWI555163B (zh) * 2015-07-22 2016-10-21 新唐科技股份有限公司 半導體結構
JP6512025B2 (ja) * 2015-08-11 2019-05-15 富士電機株式会社 半導体素子及び半導体素子の製造方法
JP6696166B2 (ja) * 2015-08-19 2020-05-20 富士電機株式会社 半導体装置および製造方法
KR102404114B1 (ko) 2015-08-20 2022-05-30 온세미컨덕터코리아 주식회사 슈퍼정션 반도체 장치 및 그 제조 방법
JP6666671B2 (ja) * 2015-08-24 2020-03-18 ローム株式会社 半導体装置
EP3951887A1 (de) * 2015-09-11 2022-02-09 Nexperia B.V. Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements
US9806186B2 (en) * 2015-10-02 2017-10-31 D3 Semiconductor LLC Termination region architecture for vertical power transistors
DE102015221376A1 (de) * 2015-11-02 2017-05-04 Robert Bosch Gmbh Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements und Steuergerät für ein Fahrzeug
JP2017107895A (ja) * 2015-12-07 2017-06-15 サンケン電気株式会社 半導体装置
DE102015121566B4 (de) * 2015-12-10 2021-12-09 Infineon Technologies Ag Halbleiterbauelemente und eine Schaltung zum Steuern eines Feldeffekttransistors eines Halbleiterbauelements
DE102015121563B4 (de) 2015-12-10 2023-03-02 Infineon Technologies Ag Halbleiterbauelemente und ein Verfahren zum Bilden eines Halbleiterbauelements
DE102015224965A1 (de) * 2015-12-11 2017-06-14 Robert Bosch Gmbh Flächenoptimierter Transistor mit Superlattice-Strukturen
CN105428241B (zh) * 2015-12-25 2018-04-17 上海华虹宏力半导体制造有限公司 具有屏蔽栅的沟槽栅功率器件的制造方法
DE102015122938B4 (de) 2015-12-30 2021-11-11 Infineon Technologies Austria Ag Transistor mit feldelektrode und verfahren zu dessen herstellung
JP6519894B2 (ja) 2016-03-31 2019-05-29 新電元工業株式会社 半導体装置の製造方法及び半導体装置
JP6367514B2 (ja) 2016-03-31 2018-08-01 新電元工業株式会社 半導体装置の製造方法及び半導体装置
JPWO2017187856A1 (ja) * 2016-04-27 2018-05-10 三菱電機株式会社 半導体装置
US9691864B1 (en) * 2016-05-13 2017-06-27 Infineon Technologies Americas Corp. Semiconductor device having a cavity and method for manufacturing thereof
TWI577040B (zh) * 2016-05-19 2017-04-01 國立中山大學 單晶片光伏元件串聯結構的製造方法
JP6649183B2 (ja) 2016-05-30 2020-02-19 株式会社東芝 半導体装置
WO2017214627A1 (en) * 2016-06-10 2017-12-14 Maxpower Semiconductor, Inc. Fabrication of trench-gated wide-bandgap devices
US12284817B2 (en) 2016-06-10 2025-04-22 Maxpower Semiconductor Inc. Trench-gated heterostructure and double-heterostructure active devices
JP6977273B2 (ja) * 2016-06-16 2021-12-08 富士電機株式会社 半導体装置および製造方法
CN107564814B (zh) * 2016-06-30 2020-11-10 株洲中车时代半导体有限公司 一种制作功率半导体的方法
CN106129113B (zh) * 2016-07-11 2019-06-14 中国科学院微电子研究所 一种垂直双扩散金属氧化物半导体场效应晶体管
TWI693713B (zh) 2016-07-22 2020-05-11 立積電子股份有限公司 半導體結構
US9972540B2 (en) 2016-08-07 2018-05-15 International Business Machines Corporation Semiconductor device having multiple thickness oxides
US10529799B2 (en) 2016-08-08 2020-01-07 Mitsubishi Electric Corporation Semiconductor device
CN107785263B (zh) * 2016-08-26 2020-09-04 台湾半导体股份有限公司 具有多重宽度电极结构的场效晶体管及其制造方法
CN107785426B (zh) * 2016-08-31 2020-01-31 无锡华润上华科技有限公司 一种半导体器件及其制造方法
CN107785273B (zh) * 2016-08-31 2020-03-13 无锡华润上华科技有限公司 半导体器件及其制造方法
JP6669628B2 (ja) * 2016-10-20 2020-03-18 トヨタ自動車株式会社 スイッチング素子
JP6659516B2 (ja) * 2016-10-20 2020-03-04 トヨタ自動車株式会社 半導体装置
WO2018078776A1 (ja) * 2016-10-27 2018-05-03 サンケン電気株式会社 半導体装置
CN107039298B (zh) * 2016-11-04 2019-12-24 厦门市三安光电科技有限公司 微元件的转移装置、转移方法、制造方法、装置和电子设备
US9812535B1 (en) * 2016-11-29 2017-11-07 Infineon Technologies Austria Ag Method for manufacturing a semiconductor device and power semiconductor device
KR102335489B1 (ko) * 2016-12-13 2021-12-03 현대자동차 주식회사 반도체 소자 및 그 제조 방법
JP6233539B1 (ja) * 2016-12-21 2017-11-22 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6589845B2 (ja) * 2016-12-21 2019-10-16 株式会社デンソー 半導体装置
JP6996082B2 (ja) * 2016-12-22 2022-01-17 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102017101662B4 (de) 2017-01-27 2019-03-28 Infineon Technologies Austria Ag Halbleiterbauelement mit einer Isolationsstruktur und einer Verbindungsstruktur sowie ein Verfahren zu dessen Herstellung
US10163900B2 (en) 2017-02-08 2018-12-25 Globalfoundries Inc. Integration of vertical field-effect transistors and saddle fin-type field effect transistors
US10211333B2 (en) * 2017-04-26 2019-02-19 Alpha And Omega Semiconductor (Cayman) Ltd. Scalable SGT structure with improved FOM
US10236340B2 (en) 2017-04-28 2019-03-19 Semiconductor Components Industries, Llc Termination implant enrichment for shielded gate MOSFETs
US10374076B2 (en) 2017-06-30 2019-08-06 Semiconductor Components Industries, Llc Shield indent trench termination for shielded gate MOSFETs
CN109216452B (zh) * 2017-07-03 2021-11-05 无锡华润上华科技有限公司 沟槽型功率器件及其制备方法
CN109216432A (zh) * 2017-07-03 2019-01-15 无锡华润上华科技有限公司 沟槽型功率器件及其制备方法
CN109216175B (zh) * 2017-07-03 2021-01-08 无锡华润上华科技有限公司 半导体器件的栅极结构及其制造方法
KR102590893B1 (ko) 2017-07-19 2023-10-17 글로벌웨어퍼스 재팬 가부시키가이샤 3차원 구조체의 제조 방법, 세로형 트랜지스터의 제조 방법, 세로형 트랜지스터용 웨이퍼 및 세로형 트랜지스터용 기판
JP6820811B2 (ja) * 2017-08-08 2021-01-27 三菱電機株式会社 半導体装置および電力変換装置
KR101960077B1 (ko) * 2017-08-30 2019-03-21 파워큐브세미(주) 플로팅 쉴드를 갖는 실리콘카바이드 트렌치 게이트 트랜지스터 및 그 제조 방법
TWI695418B (zh) * 2017-09-22 2020-06-01 新唐科技股份有限公司 半導體元件及其製造方法
JP2019068592A (ja) 2017-09-29 2019-04-25 トヨタ自動車株式会社 電力変換装置
TWI737855B (zh) * 2017-11-15 2021-09-01 力智電子股份有限公司 功率電晶體及其製造方法
CN108010847B (zh) * 2017-11-30 2020-09-25 上海华虹宏力半导体制造有限公司 屏蔽栅沟槽mosfet及其制造方法
US10777465B2 (en) 2018-01-11 2020-09-15 Globalfoundries Inc. Integration of vertical-transport transistors and planar transistors
CN108172622A (zh) * 2018-01-30 2018-06-15 电子科技大学 功率半导体器件
CN108447911B (zh) * 2018-03-09 2021-07-27 香港商莫斯飞特半导体股份有限公司 一种深浅沟槽半导体功率器件及其制备方法
JP6864640B2 (ja) 2018-03-19 2021-04-28 株式会社東芝 半導体装置及びその制御方法
US10304933B1 (en) * 2018-04-24 2019-05-28 Semiconductor Components Industries, Llc Trench power MOSFET having a trench cavity
CN109037337A (zh) * 2018-06-28 2018-12-18 华为技术有限公司 一种功率半导体器件及制造方法
JP7078226B2 (ja) * 2018-07-19 2022-05-31 国立研究開発法人産業技術総合研究所 半導体装置
US10580888B1 (en) * 2018-08-08 2020-03-03 Infineon Technologies Austria Ag Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices
CN109326639B (zh) * 2018-08-23 2021-11-23 电子科技大学 具有体内场板的分离栅vdmos器件及其制造方法
CN109119476A (zh) * 2018-08-23 2019-01-01 电子科技大学 具有体内场板的分离栅vdmos器件及其制造方法
DE102018124737B4 (de) * 2018-10-08 2025-08-14 Infineon Technologies Ag Halbleiterbauelement mit einem sic halbleiterkörper und verfahren zur herstellung eines halbleiterbauelements
KR102100863B1 (ko) * 2018-12-06 2020-04-14 현대오트론 주식회사 SiC MOSFET 전력 반도체 소자
US11348997B2 (en) 2018-12-17 2022-05-31 Vanguard International Semiconductor Corporation Semiconductor devices and methods for fabricating the same
CN111384149B (zh) * 2018-12-29 2021-05-14 比亚迪半导体股份有限公司 沟槽型igbt及其制备方法
CN113261079B (zh) * 2019-01-08 2024-07-23 三菱电机株式会社 半导体装置以及电力变换装置
CN109767980B (zh) * 2019-01-22 2021-07-30 上海华虹宏力半导体制造有限公司 超级结及其制造方法、超级结的深沟槽制造方法
TWI823892B (zh) * 2019-01-24 2023-12-01 世界先進積體電路股份有限公司 半導體裝置及其製造方法
JP7352360B2 (ja) * 2019-02-12 2023-09-28 株式会社東芝 半導体装置
JP7077251B2 (ja) * 2019-02-25 2022-05-30 株式会社東芝 半導体装置
US11217541B2 (en) 2019-05-08 2022-01-04 Vishay-Siliconix, LLC Transistors with electrically active chip seal ring and methods of manufacture
US11521967B2 (en) 2019-06-28 2022-12-06 Stmicroelectronics International N.V. Multi-finger devices with reduced parasitic capacitance
DE102019210285B4 (de) 2019-07-11 2023-09-28 Infineon Technologies Ag Erzeugen eines vergrabenen Hohlraums in einem Halbleitersubstrat
US11218144B2 (en) 2019-09-12 2022-01-04 Vishay-Siliconix, LLC Semiconductor device with multiple independent gates
JP2021044517A (ja) * 2019-09-13 2021-03-18 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
CN110943132B (zh) * 2019-12-17 2025-01-14 华羿微电子股份有限公司 低电容的沟槽型vdmos器件及其制备方法
CN113130632B (zh) * 2019-12-31 2022-08-12 无锡华润上华科技有限公司 横向扩散金属氧化物半导体器件及其制备方法
JP7374795B2 (ja) * 2020-02-05 2023-11-07 株式会社東芝 半導体装置
EP3863066A1 (de) * 2020-02-06 2021-08-11 Infineon Technologies Austria AG Transistorvorrichtung und verfahren zur herstellung eines gates einer transistorvorrichtung
US11264287B2 (en) 2020-02-11 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with cut metal gate and method of manufacture
JP7510295B2 (ja) * 2020-02-18 2024-07-03 株式会社東芝 半導体装置
JP7465123B2 (ja) 2020-03-12 2024-04-10 株式会社東芝 半導体装置
JP7387501B2 (ja) 2020-03-18 2023-11-28 株式会社東芝 半導体装置およびその制御方法
JP7270575B2 (ja) * 2020-04-15 2023-05-10 株式会社東芝 半導体装置
US12382647B2 (en) * 2020-04-24 2025-08-05 Kyocera Corporation Semiconductor device and method for manufacturing semiconductor device
CN111883515A (zh) * 2020-07-16 2020-11-03 上海华虹宏力半导体制造有限公司 沟槽栅器件及其制作方法
JP7470071B2 (ja) 2020-07-22 2024-04-17 株式会社東芝 半導体装置
JP7319754B2 (ja) 2020-08-19 2023-08-02 株式会社東芝 半導体装置
KR102382846B1 (ko) * 2020-08-28 2022-04-05 부산대학교 산학협력단 SiC 트렌치 게이트 MOSFET 구조의 임계 치수 변화를 줄이기 위한 자기 정렬 공정 방법 및 자기 정렬 공정 장치
CN112271134B (zh) * 2020-10-20 2021-10-22 苏州东微半导体股份有限公司 半导体功率器件的制造方法
KR102413641B1 (ko) 2020-11-27 2022-06-27 주식회사 예스파워테크닉스 트렌치 파워 모스펫 제조 방법 및 그 방법에 의해 제조된 트렌치 파워 모스펫
TWI801783B (zh) * 2020-12-09 2023-05-11 大陸商上海瀚薪科技有限公司 碳化矽半導體元件
KR102437528B1 (ko) * 2020-12-22 2022-08-29 한국과학기술원 쇼트키 배리어 다이오드 수동소자 및 그 제조 방법
CN112820648B (zh) * 2020-12-31 2023-08-01 扬州扬杰电子科技股份有限公司 一种氮化镓金属氧化物半导体晶体管及其制备方法
JP2022111450A (ja) * 2021-01-20 2022-08-01 株式会社東芝 半導体装置
US11387338B1 (en) 2021-01-22 2022-07-12 Applied Materials, Inc. Methods for forming planar metal-oxide-semiconductor field-effect transistors
WO2022162894A1 (ja) * 2021-01-29 2022-08-04 サンケン電気株式会社 半導体装置
JP7470075B2 (ja) 2021-03-10 2024-04-17 株式会社東芝 半導体装置
CN113066865B (zh) * 2021-03-15 2022-10-28 无锡新洁能股份有限公司 降低开关损耗的半导体器件及其制作方法
KR102444384B1 (ko) 2021-03-16 2022-09-19 주식회사 키파운드리 트렌치 파워 mosfet 및 그 제조방법
JP7472068B2 (ja) 2021-03-19 2024-04-22 株式会社東芝 半導体装置及び半導体回路
FR3121280B1 (fr) * 2021-03-29 2023-12-22 Commissariat Energie Atomique Transistor à effet de champ à structure verticale
CN115148812A (zh) * 2021-03-30 2022-10-04 无锡华润上华科技有限公司 半导体器件及其制造方法
JP2022167237A (ja) * 2021-04-22 2022-11-04 有限会社Mtec 半導体素子の製造方法及び縦型ｍｏｓｆｅｔ素子
CN113192842B (zh) * 2021-05-19 2023-05-09 厦门中能微电子有限公司 一种CoolMOS器件制作方法
CN115394753B (zh) * 2021-05-20 2025-02-21 原相科技股份有限公司 远红外线感测元件及制造方法与感测介电层厚度决定方法
EP4102559A1 (de) 2021-06-10 2022-12-14 Hitachi Energy Switzerland AG Leistungshalbleitermodul
JP7614977B2 (ja) 2021-08-18 2025-01-16 株式会社東芝 半導体装置およびその製造方法
CN113707713B (zh) * 2021-08-31 2023-06-30 西安电子科技大学 多级瓣状体区金属氧化物半导体功率器件及其制作方法
JP7610492B2 (ja) 2021-09-08 2025-01-08 株式会社東芝 半導体装置
EP4152408A1 (de) * 2021-09-21 2023-03-22 Infineon Technologies Austria AG Halbleiterchip mit einem bauelement
DE102021125271A1 (de) 2021-09-29 2023-03-30 Infineon Technologies Ag LeistungshalbleitervorrichtungVerfahren zur Herstellung einer Leistungshalbleitervorrichtung
CN114188395A (zh) * 2021-10-09 2022-03-15 无锡先瞳半导体科技有限公司 电荷补偿型屏蔽栅沟槽功率器件及其制备方法
CN113990921B (zh) * 2021-10-18 2023-12-08 深圳市威兆半导体股份有限公司 半导体纵向器件及其生产方法
CN114267584A (zh) * 2021-12-22 2022-04-01 扬州杰利半导体有限公司 一种适用于深沟槽蚀刻的芯片制作工艺
JP7461534B2 (ja) * 2021-12-23 2024-04-03 ローム株式会社 半導体装置
KR102635228B1 (ko) * 2021-12-28 2024-02-13 파워큐브세미 (주) 절연 거리가 확보된 박막형 패키지
CN114334823A (zh) * 2021-12-31 2022-04-12 上海晶岳电子有限公司 一种改善晶圆翘曲的sgt器件及其制作方法
CN114068531B (zh) * 2022-01-17 2022-03-29 深圳市威兆半导体有限公司 一种基于sgt-mosfet的电压采样结构
US12155245B2 (en) 2022-01-18 2024-11-26 Innoscience (suzhou) Semiconductor Co., Ltd. Nitride-based bidirectional switching device for battery management and method for manufacturing the same
EP4244893A4 (de) 2022-01-18 2023-11-29 Innoscience (Suzhou) Semiconductor Co., Ltd. Auf nitrid basierende bidirektionale schaltvorrichtung für batterieverwaltung und verfahren zum herstellen derselben
CN114496995B (zh) * 2022-04-18 2022-06-17 深圳市威兆半导体有限公司 一种带温度采样功能的屏蔽栅器件
CN115274566B (zh) * 2022-07-08 2025-04-29 上海华虹宏力半导体制造有限公司 一种集成肖特基二极管的屏蔽栅沟槽mosfet的制作方法
US20240014210A1 (en) * 2022-07-08 2024-01-11 Samsung Electronics Co., Ltd. Power management integrated circuit and semiconductor package including the same
CN115458599B (zh) * 2022-07-25 2025-12-19 深圳基本半导体股份有限公司 一种sgt-mosfet元胞及其制造方法和一种电子装置
US12279455B2 (en) 2022-09-18 2025-04-15 Vanguard International Semiconductor Corporation Semiconductor device and method of fabricating the same
JP2024044148A (ja) * 2022-09-20 2024-04-02 株式会社東芝 半導体装置、及び半導体装置の製造方法
JP7801978B2 (ja) * 2022-09-22 2026-01-19 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
EP4345908A1 (de) * 2022-09-28 2024-04-03 Nexperia B.V. Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements
WO2024083312A1 (en) * 2022-10-18 2024-04-25 Huawei Digital Power Technologies Co., Ltd. Power mosfet device
TWI838929B (zh) * 2022-10-28 2024-04-11 世界先進積體電路股份有限公司 半導體裝置及其製造方法
CN120380862A (zh) * 2022-12-07 2025-07-25 Lx半导体科技有限公司 能够抑制触发的闩锁电路及包括能够抑制触发的闩锁电路的半导体基底的结构
CN115799340B (zh) * 2023-01-09 2023-05-12 无锡先瞳半导体科技有限公司 屏蔽栅场效应晶体管
TWI832716B (zh) * 2023-03-02 2024-02-11 鴻海精密工業股份有限公司 製作半導體裝置的方法與半導體裝置
CN116313809B (zh) * 2023-03-14 2024-02-23 深圳市至信微电子有限公司 沟槽型mos场效应晶体管的制备方法和应用
CN116093146B (zh) * 2023-04-11 2024-02-20 江苏应能微电子股份有限公司 一种分段式分离栅sgt mosfet结构
DE102024202924B4 (de) 2023-05-31 2025-07-24 Infineon Technologies Ag Halbleitervorrichtung, umfassend eine mehrschichtige dielektrische high-k-gate-laminatstruktur und ein verfahren zur herstellung davon
CN116388742B (zh) * 2023-06-02 2023-08-29 东莞市长工微电子有限公司 功率半导体器件栅极驱动电路及驱动方法
CN117352555B (zh) * 2023-12-06 2024-04-09 无锡锡产微芯半导体有限公司 一种集成式屏蔽栅沟槽mosfet及其制备工艺
EP4571842A1 (de) * 2023-12-12 2025-06-18 Infineon Technologies Austria AG Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements
CN117410346B (zh) * 2023-12-14 2024-03-26 深圳市森国科科技股份有限公司 一种沟槽栅碳化硅mosfet及制作方法
WO2025190498A1 (en) * 2024-03-15 2025-09-18 Hitachi Energy Ltd Unit cell of a multi-trench semiconductor device and semiconductor device
TWI891309B (zh) * 2024-03-29 2025-07-21 世界先進積體電路股份有限公司 半導體裝置
CN118053761B (zh) * 2024-04-16 2024-06-25 泰科天润半导体科技（北京）有限公司 一种抑制栅极击穿的沟槽栅碳化硅mosfet的制备方法
CN118136675B (zh) * 2024-05-07 2024-07-05 南京第三代半导体技术创新中心有限公司 具备电场调制结构的双沟槽碳化硅mosfet器件及其制造方法
KR102791033B1 (ko) 2024-06-13 2025-04-07 에스케이파워텍 주식회사 트렌치 게이트 모스펫 제조 방법
CN118448464B (zh) * 2024-07-04 2024-10-25 深圳天狼芯半导体有限公司 具有低输入电容的超结mosfet及其制备方法、芯片
TWI903680B (zh) * 2024-08-08 2025-11-01 尼克森微電子股份有限公司 功率元件及其製造方法
CN118969793B (zh) * 2024-10-17 2025-03-18 湖南三安半导体有限责任公司 半导体器件
CN119317170B (zh) * 2024-12-13 2025-03-11 深圳云潼微电子科技有限公司 一种屏蔽栅沟槽mos器件及制作方法
CN120568776B (zh) * 2025-07-30 2025-10-03 长春长光圆辰微电子技术有限公司 基于条型终端的沟槽肖特基二极管及其制备方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326711A (en) * 1993-01-04 1994-07-05 Texas Instruments Incorporated High performance high voltage vertical transistor and method of fabrication
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US6037628A (en) * 1997-06-30 2000-03-14 Intersil Corporation Semiconductor structures with trench contacts
WO2000042665A1 (de) * 1999-01-11 2000-07-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mos-leistungsbauelement und verfahren zum herstellen desselben
EP1168455A2 (de) * 2000-06-30 2002-01-02 Kabushiki Kaisha Toshiba Leistungshalbleiter-Schaltelement
US6359308B1 (en) * 1999-07-22 2002-03-19 U.S. Philips Corporation Cellular trench-gate field-effect transistors
WO2003023861A2 (en) * 2001-09-13 2003-03-20 Koninklijke Philips Electronics N.V. Edge termination in mos transistors
US20030197220A1 (en) * 2001-09-07 2003-10-23 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
EP1369927A2 (de) * 2002-06-05 2003-12-10 Shindengen Electric Manufacturing Co., Ltd. Halbleiteranordnung mit Feldformungsgebieten

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4541001A (en) * 1982-09-23 1985-09-10 Eaton Corporation Bidirectional power FET with substrate-referenced shield
JP2590863B2 (ja) * 1987-03-12 1997-03-12 日本電装株式会社 導電変調型ｍｏｓｆｅｔ
JP2570742B2 (ja) * 1987-05-27 1997-01-16 ソニー株式会社 半導体装置
JPS6459868A (en) * 1987-08-29 1989-03-07 Fuji Electric Co Ltd Semiconductor device having insulating gate
US5430324A (en) * 1992-07-23 1995-07-04 Siliconix, Incorporated High voltage transistor having edge termination utilizing trench technology
JP3257186B2 (ja) * 1993-10-12 2002-02-18 富士電機株式会社 絶縁ゲート型サイリスタ
JPH08264772A (ja) * 1995-03-23 1996-10-11 Toyota Motor Corp 電界効果型半導体素子
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
US6236099B1 (en) * 1996-04-22 2001-05-22 International Rectifier Corp. Trench MOS device and process for radhard device
JPH09331062A (ja) * 1996-06-11 1997-12-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH1117000A (ja) * 1997-06-27 1999-01-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4061711B2 (ja) * 1998-06-18 2008-03-19 株式会社デンソー Ｍｏｓトランジスタ及びその製造方法
US6351018B1 (en) * 1999-02-26 2002-02-26 Fairchild Semiconductor Corporation Monolithically integrated trench MOSFET and Schottky diode
US6376878B1 (en) * 2000-02-11 2002-04-23 Fairchild Semiconductor Corporation MOS-gated devices with alternating zones of conductivity
JP2001284584A (ja) * 2000-03-30 2001-10-12 Toshiba Corp 半導体装置及びその製造方法
EP1170803A3 (de) * 2000-06-08 2002-10-09 Siliconix Incorporated MOSFET mit Graben-Gateelektrode und Verfahren zu dessen Herstellung
DE10038177A1 (de) * 2000-08-04 2002-02-21 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterschaltelement mit zwei Steuerelektroden
US6593620B1 (en) * 2000-10-06 2003-07-15 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US6608350B2 (en) * 2000-12-07 2003-08-19 International Rectifier Corporation High voltage vertical conduction superjunction semiconductor device
JP4357753B2 (ja) * 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置
US6677641B2 (en) * 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6683363B2 (en) * 2001-07-03 2004-01-27 Fairchild Semiconductor Corporation Trench structure for semiconductor devices
US6621107B2 (en) * 2001-08-23 2003-09-16 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
JP4097417B2 (ja) * 2001-10-26 2008-06-11 株式会社ルネサステクノロジ 半導体装置
DE10153315B4 (de) * 2001-10-29 2004-05-19 Infineon Technologies Ag Halbleiterbauelement
JP4009825B2 (ja) * 2002-02-20 2007-11-21 サンケン電気株式会社 絶縁ゲート型トランジスタ
CN103199017B (zh) * 2003-12-30 2016-08-03 飞兆半导体公司 形成掩埋导电层方法、材料厚度控制法、形成晶体管方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326711A (en) * 1993-01-04 1994-07-05 Texas Instruments Incorporated High performance high voltage vertical transistor and method of fabrication
US6037628A (en) * 1997-06-30 2000-03-14 Intersil Corporation Semiconductor structures with trench contacts
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
WO2000042665A1 (de) * 1999-01-11 2000-07-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mos-leistungsbauelement und verfahren zum herstellen desselben
US6359308B1 (en) * 1999-07-22 2002-03-19 U.S. Philips Corporation Cellular trench-gate field-effect transistors
EP1168455A2 (de) * 2000-06-30 2002-01-02 Kabushiki Kaisha Toshiba Leistungshalbleiter-Schaltelement
US20030197220A1 (en) * 2001-09-07 2003-10-23 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
WO2003023861A2 (en) * 2001-09-13 2003-03-20 Koninklijke Philips Electronics N.V. Edge termination in mos transistors
EP1369927A2 (de) * 2002-06-05 2003-12-10 Shindengen Electric Manufacturing Co., Ltd. Halbleiteranordnung mit Feldformungsgebieten

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