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DE60317862D1 - Lichtemittierende Halbleitervorrichtung - Google Patents

Lichtemittierende Halbleitervorrichtung

Info

Publication number
DE60317862D1
DE60317862D1 DE60317862T DE60317862T DE60317862D1 DE 60317862 D1 DE60317862 D1 DE 60317862D1 DE 60317862 T DE60317862 T DE 60317862T DE 60317862 T DE60317862 T DE 60317862T DE 60317862 D1 DE60317862 D1 DE 60317862D1
Authority
DE
Germany
Prior art keywords
light
semiconductor device
emitting semiconductor
emitting
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60317862T
Other languages
English (en)
Other versions
DE60317862T2 (de
Inventor
Takashi Matsuoka
Hiroshi Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002178536A external-priority patent/JP2004022970A/ja
Priority claimed from JP2002178531A external-priority patent/JP2004022969A/ja
Priority claimed from JP2002252837A external-priority patent/JP4300004B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE60317862D1 publication Critical patent/DE60317862D1/de
Application granted granted Critical
Publication of DE60317862T2 publication Critical patent/DE60317862T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
DE60317862T 2002-06-19 2003-04-24 Lichtemittierende Halbleitervorrichtung Expired - Lifetime DE60317862T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2002178536 2002-06-19
JP2002178536A JP2004022970A (ja) 2002-06-19 2002-06-19 半導体発光素子
JP2002178531 2002-06-19
JP2002178531A JP2004022969A (ja) 2002-06-19 2002-06-19 半導体発光素子
JP2002252837A JP4300004B2 (ja) 2002-08-30 2002-08-30 半導体発光素子
JP2002252837 2002-08-30

Publications (2)

Publication Number Publication Date
DE60317862D1 true DE60317862D1 (de) 2008-01-17
DE60317862T2 DE60317862T2 (de) 2008-12-18

Family

ID=29740559

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60317862T Expired - Lifetime DE60317862T2 (de) 2002-06-19 2003-04-24 Lichtemittierende Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US6927426B2 (de)
EP (1) EP1389814B1 (de)
KR (1) KR100568701B1 (de)
CN (1) CN1324772C (de)
DE (1) DE60317862T2 (de)

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KR100898586B1 (ko) * 2007-03-30 2009-05-20 서울옵토디바이스주식회사 발광 다이오드
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JP4510931B2 (ja) * 2008-09-09 2010-07-28 パナソニック株式会社 窒化物系半導体発光素子およびその製造方法
JP2010232597A (ja) * 2009-03-30 2010-10-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
US8183132B2 (en) * 2009-04-10 2012-05-22 Applied Materials, Inc. Methods for fabricating group III nitride structures with a cluster tool
US8491720B2 (en) * 2009-04-10 2013-07-23 Applied Materials, Inc. HVPE precursor source hardware
KR20120003493A (ko) * 2009-04-24 2012-01-10 어플라이드 머티어리얼스, 인코포레이티드 후속하는 고온 그룹 ⅲ 증착들을 위한 기판 전처리
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US8580593B2 (en) * 2009-09-10 2013-11-12 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
US20110220945A1 (en) * 2010-03-09 2011-09-15 Dae Sung Kang Light emitting device and light emitting device package having the same
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
TWI534291B (zh) 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
US8927958B2 (en) * 2011-07-12 2015-01-06 Epistar Corporation Light-emitting element with multiple light-emitting stacked layers
TWI555226B (zh) * 2011-07-12 2016-10-21 晶元光電股份有限公司 具有多層發光疊層的發光元件
US20130015461A1 (en) * 2011-07-13 2013-01-17 Kun Hsin Technology Inc. Light-emitting Device Capable of Producing White Light And Light Mixing Method For Producing White Light With Same
DE102011116232B4 (de) * 2011-10-17 2020-04-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
JP6271934B2 (ja) * 2012-11-02 2018-01-31 キヤノン株式会社 窒化物半導体面発光レーザ及びその製造方法
KR102158576B1 (ko) * 2014-02-18 2020-09-22 엘지이노텍 주식회사 자외선 발광소자 및 이를 구비하는 발광소자 패키지
JP6595801B2 (ja) 2014-05-30 2019-10-23 エルジー イノテック カンパニー リミテッド 発光素子
KR102455084B1 (ko) * 2016-02-23 2022-10-14 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지 및 이를 갖는 표시장치
CN108209941B (zh) * 2018-01-03 2021-06-08 中国科学院半导体研究所 血氧探测器探测单元、探头及其制备方法
CN111128899B (zh) * 2018-10-31 2022-03-22 成都辰显光电有限公司 外延基板及其制造方法
CN112331130A (zh) * 2019-07-31 2021-02-05 Tcl集团股份有限公司 一种量子点发光二极管的驱动方法、驱动装置及显示装置
CN112289897A (zh) * 2020-09-17 2021-01-29 华灿光电（浙江）有限公司 发光二极管外延片的制造方法及发光二极管外延片

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Also Published As

Publication number Publication date
DE60317862T2 (de) 2008-12-18
CN1467888A (zh) 2004-01-14
KR100568701B1 (ko) 2006-04-07
US6927426B2 (en) 2005-08-09
KR20040002471A (ko) 2004-01-07
CN1324772C (zh) 2007-07-04
EP1389814B1 (de) 2007-12-05
US20030234404A1 (en) 2003-12-25
EP1389814A3 (de) 2005-01-26
EP1389814A2 (de) 2004-02-18

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition