DE102007008568B8 - Halbleitervorrichtung mit IGBT und Diode - Google Patents

Halbleitervorrichtung mit IGBT und Diode Download PDF

Info

Publication number: DE102007008568B8
Authority: DE; Germany
Prior art keywords: igbt; diode; semiconductor device; semiconductor
Prior art date: 2006-02-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE102007008568A

Other languages

English (en)

Other versions

DE102007008568B4 (de

DE102007008568A1 (de

Inventor

Yoshihiko Ozeki

Norihito Tokura

Yukio Tsuzuki

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Denso Corp

Original Assignee

Denso Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-02-24

Filing date

2007-02-21

Publication date

2013-01-17

2007-02-21 Application filed by Denso Corp filed Critical Denso Corp

2007-09-06 Publication of DE102007008568A1 publication Critical patent/DE102007008568A1/de

2012-11-08 Application granted granted Critical

2012-11-08 Publication of DE102007008568B4 publication Critical patent/DE102007008568B4/de

2013-01-17 Publication of DE102007008568B8 publication Critical patent/DE102007008568B8/de

Status Expired - Fee Related legal-status Critical Current

2027-02-22 Anticipated expiration legal-status Critical

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/411—PN diodes having planar bodies

DE102007008568A 2006-02-24 2007-02-21 Halbleitervorrichtung mit IGBT und Diode Expired - Fee Related DE102007008568B8 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2006-049300		2006-02-24
JP2006049300A JP5011748B2 (ja)	2006-02-24	2006-02-24	半導体装置

Publications (3)

Publication Number	Publication Date
DE102007008568A1 DE102007008568A1 (de)	2007-09-06
DE102007008568B4 DE102007008568B4 (de)	2012-11-08
DE102007008568B8 true DE102007008568B8 (de)	2013-01-17

Family

ID=38329473

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE102007008568A Expired - Fee Related DE102007008568B8 (de)	2006-02-24	2007-02-21	Halbleitervorrichtung mit IGBT und Diode

Country Status (4)

Country	Link
US (1)	US8102025B2 (de)
JP (1)	JP5011748B2 (de)
CN (1)	CN100559589C (de)
DE (1)	DE102007008568B8 (de)

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EP2442355B1 (de)	2009-06-11	2014-04-23	Toyota Jidosha Kabushiki Kaisha	Halbleiterbauelement
JP5333342B2 (ja) *	2009-06-29	2013-11-06	株式会社デンソー	半導体装置
JP2011023527A (ja) *	2009-07-15	2011-02-03	Toshiba Corp	半導体装置
US9646869B2 (en) *	2010-03-02	2017-05-09	Micron Technology, Inc.	Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
US8507966B2 (en)	2010-03-02	2013-08-13	Micron Technology, Inc.	Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
US8513722B2 (en)	2010-03-02	2013-08-20	Micron Technology, Inc.	Floating body cell structures, devices including same, and methods for forming same
US9608119B2 (en)	2010-03-02	2017-03-28	Micron Technology, Inc.	Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
US8288795B2 (en)	2010-03-02	2012-10-16	Micron Technology, Inc.	Thyristor based memory cells, devices and systems including the same and methods for forming the same
JP5678469B2 (ja) *	2010-05-07	2015-03-04	株式会社デンソー	半導体装置
JP2011238771A (ja) *	2010-05-11	2011-11-24	Hitachi Ltd	半導体装置
JP6301776B2 (ja) *	2010-05-26	2018-03-28	三菱電機株式会社	半導体装置
JP5582102B2 (ja)	2010-07-01	2014-09-03	株式会社デンソー	半導体装置
JP5606240B2 (ja) *	2010-09-22	2014-10-15	三菱電機株式会社	半導体装置
JP5395275B2 (ja) *	2010-10-29	2014-01-22	パナソニック株式会社	半導体素子およびその製造方法
JP5321669B2 (ja)	2010-11-25	2013-10-23	株式会社デンソー	半導体装置
US8502346B2 (en) *	2010-12-23	2013-08-06	Alpha And Omega Semiconductor Incorporated	Monolithic IGBT and diode structure for quasi-resonant converters
US8598621B2 (en)	2011-02-11	2013-12-03	Micron Technology, Inc.	Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
US8952418B2 (en)	2011-03-01	2015-02-10	Micron Technology, Inc.	Gated bipolar junction transistors
US8519431B2 (en)	2011-03-08	2013-08-27	Micron Technology, Inc.	Thyristors
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US8772848B2 (en)	2011-07-26	2014-07-08	Micron Technology, Inc.	Circuit structures, memory circuitry, and methods
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JP6022774B2 (ja) *	2012-01-24	2016-11-09	トヨタ自動車株式会社	半導体装置
JP2014103376A (ja) *	2012-09-24	2014-06-05	Toshiba Corp	半導体装置
CN102931223B (zh) *	2012-11-28	2015-11-04	江苏物联网研究发展中心	Igbt集电极结构
CN104253151B (zh) *	2013-06-27	2017-06-27	无锡华润上华半导体有限公司	场截止型反向导通绝缘栅双极型晶体管及其制造方法
CN104253152A (zh) *	2013-06-28	2014-12-31	无锡华润上华半导体有限公司	一种igbt及其制造方法
CN103489908A (zh) *	2013-09-16	2014-01-01	电子科技大学	一种能消除负阻效应的rc-igbt
CN104465732B (zh) *	2013-09-22	2018-07-06	南京励盛半导体科技有限公司	一种半导体功率器件的结构
JP6107767B2 (ja) *	2013-12-27	2017-04-05	トヨタ自動車株式会社	半導体装置とその製造方法
DE112014006296B4 (de) *	2014-01-29	2026-01-22	Mitsubishi Electric Corporation	Leistungshalbleitervorrichtung
US9419148B2 (en) *	2014-03-28	2016-08-16	Stmicroelectronics S.R.L.	Diode with insulated anode regions
JP2016029685A (ja) *	2014-07-25	2016-03-03	株式会社東芝	半導体装置
US9673054B2 (en)	2014-08-18	2017-06-06	Micron Technology, Inc.	Array of gated devices and methods of forming an array of gated devices
US9209187B1 (en)	2014-08-18	2015-12-08	Micron Technology, Inc.	Methods of forming an array of gated devices
US9224738B1 (en)	2014-08-18	2015-12-29	Micron Technology, Inc.	Methods of forming an array of gated devices
JP6261494B2 (ja)	2014-12-03	2018-01-17	三菱電機株式会社	電力用半導体装置
JP6269860B2 (ja) *	2014-12-17	2018-01-31	三菱電機株式会社	半導体装置
JP6854654B2 (ja)	2017-01-26	2021-04-07	ローム株式会社	半導体装置
JP6652515B2 (ja) *	2017-02-09	2020-02-26	株式会社東芝	半導体装置
CN108447903B (zh) *	2017-02-16	2023-07-04	富士电机株式会社	半导体装置
JP6804379B2 (ja)	2017-04-24	2020-12-23	三菱電機株式会社	半導体装置
US10396189B2 (en) *	2017-05-30	2019-08-27	Fuji Electric Co., Ltd.	Semiconductor device
TWI695418B (zh) *	2017-09-22	2020-06-01	新唐科技股份有限公司	半導體元件及其製造方法
JP7102808B2 (ja) *	2018-03-15	2022-07-20	富士電機株式会社	半導体装置
JP7000971B2 (ja) *	2018-04-17	2022-01-19	三菱電機株式会社	半導体装置
JP6987015B2 (ja) *	2018-04-26	2021-12-22	三菱電機株式会社	半導体装置
JP2021128993A (ja) *	2020-02-13	2021-09-02	サンケン電気株式会社	半導体装置およびスイッチングシステム

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Publication number	Priority date	Publication date	Assignee	Title
US5360984A (en) *	1991-11-29	1994-11-01	Fuji Electric Co., Ltd.	IGBT with freewheeling diode
US5859446A (en) *	1996-02-28	1999-01-12	Hitachi, Ltd.	Diode and power converting apparatus
JP2000114550A (ja) *	1998-10-06	2000-04-21	Hitachi Ltd	ダイオード及び電力変換装置
JP2000340806A (ja) *	1999-05-27	2000-12-08	Toshiba Corp	半導体装置
US6177713B1 (en) *	1998-07-29	2001-01-23	Mitsubishi Denki Kabushiki Kaisha	Free wheel diode for preventing destruction of a field limiting innermost circumferential layer
JP2002270857A (ja) *	2001-03-07	2002-09-20	Toshiba Corp	半導体装置および電力変換装置
DE10160118A1 (de) *	2001-04-18	2002-10-31	Mitsubishi Electric Corp	Halbleiterelement

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2006
- 2006-02-24 JP JP2006049300A patent/JP5011748B2/ja not_active Expired - Fee Related
2007
- 2007-02-16 CN CNB2007100789830A patent/CN100559589C/zh not_active Expired - Fee Related
- 2007-02-21 DE DE102007008568A patent/DE102007008568B8/de not_active Expired - Fee Related
- 2007-02-22 US US11/709,272 patent/US8102025B2/en not_active Expired - Fee Related

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Publication number	Priority date	Publication date	Assignee	Title
US5360984A (en) *	1991-11-29	1994-11-01	Fuji Electric Co., Ltd.	IGBT with freewheeling diode
US5859446A (en) *	1996-02-28	1999-01-12	Hitachi, Ltd.	Diode and power converting apparatus
US6177713B1 (en) *	1998-07-29	2001-01-23	Mitsubishi Denki Kabushiki Kaisha	Free wheel diode for preventing destruction of a field limiting innermost circumferential layer
JP2000114550A (ja) *	1998-10-06	2000-04-21	Hitachi Ltd	ダイオード及び電力変換装置
JP2000340806A (ja) *	1999-05-27	2000-12-08	Toshiba Corp	半導体装置
JP2002270857A (ja) *	2001-03-07	2002-09-20	Toshiba Corp	半導体装置および電力変換装置
DE10160118A1 (de) *	2001-04-18	2002-10-31	Mitsubishi Electric Corp	Halbleiterelement

Also Published As

Publication number	Publication date
JP2007227806A (ja)	2007-09-06
CN100559589C (zh)	2009-11-11
CN101026161A (zh)	2007-08-29
DE102007008568B4 (de)	2012-11-08
JP5011748B2 (ja)	2012-08-29
US8102025B2 (en)	2012-01-24
US20070200138A1 (en)	2007-08-30
DE102007008568A1 (de)	2007-09-06

Publication	Publication Date	Title
DE102007008568B8 (de)	2013-01-17	Halbleitervorrichtung mit IGBT und Diode
DE602007013318D1 (de)	2011-05-05	Halbleiterbauelement
DE102008061962A8 (de)	2009-11-19	Halbleitervorrichtung mit Super Junction
BRPI0820225A2 (pt)	2015-06-16	Dispositivo semicondutor e dispositivo de monitor
DE602008000468D1 (de)	2010-02-11	Halbleiterbauelement
DE602008002784D1 (de)	2010-11-11	Halbleiterbauelement
DE602007013972D1 (de)	2011-06-01	Halbleiterbauelement
DE602007002105D1 (de)	2009-10-08	Halbleiterbauelement
EP2225504A4 (de)	2016-12-07	Eisherstellungsvorrichtung und kühlschrank
BRPI1012070A2 (pt)	2018-06-12	"dispositivo semicondutor"
EP2310443A4 (de)	2012-09-05	Kunststoffsubstrat und vorrichtung damit
EP2020690A4 (de)	2012-08-29	Halbleiter-leuchtbauelement und wafer
DE102005024684A8 (de)	2013-11-21	Halbleitervorrichtung
BRPI0907964A2 (pt)	2015-08-04	Dispositivo de trilho e refrigerador que utiliza o mesmo
EP2088620A4 (de)	2011-11-30	Halbleitervorrichtung
EP2120271A4 (de)	2015-03-25	Led-anordnung und beleuchtungsvorrichtung
EP1854155A4 (de)	2010-03-31	Lichtemittierendes halbleiterbauelement
DE502006003077D1 (de)	2009-04-23	Halbleiterbauelement und Laservorrichtung
EP2028692A4 (de)	2009-12-23	Halbleiterbauelement
DE602007013325D1 (de)	2011-05-05	Halbleitervorrichtung und Herstellungsverfahren dafür
EP2104910A4 (de)	2014-01-08	Halbleiterbauelement
DE602007006370D1 (de)	2010-06-24	Halbleiterbauelement und Herstellungsverfahren dafür
EP2159852A4 (de)	2012-09-26	Lichtemittierendes halbleiterbauelement
DE112008003200A5 (de)	2010-09-16	Strahlungsemittierender Halbleiterkörper
TWI369765B (en)	2012-08-01	Package and semiconductor device

Legal Events

Date	Code	Title	Description
2007-09-06	OP8	Request for examination as to paragraph 44 patent law
2012-06-28	R018	Grant decision by examination section/examining division
2012-11-26	R082	Change of representative	Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAIS, DE
2013-05-16	R020	Patent grant now final	Effective date: 20130209
2021-09-01	R119	Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee