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DE602007002105D1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE602007002105D1
DE602007002105D1 DE602007002105T DE602007002105T DE602007002105D1 DE 602007002105 D1 DE602007002105 D1 DE 602007002105D1 DE 602007002105 T DE602007002105 T DE 602007002105T DE 602007002105 T DE602007002105 T DE 602007002105T DE 602007002105 D1 DE602007002105 D1 DE 602007002105D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007002105T
Other languages
English (en)
Inventor
Atsushi Hirose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE602007002105D1 publication Critical patent/DE602007002105D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/513—Indexing scheme relating to amplifiers the amplifier being made for low supply voltages
    • H10W90/724—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE602007002105T 2006-04-28 2007-04-04 Halbleiterbauelement Active DE602007002105D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006126017 2006-04-28

Publications (1)

Publication Number Publication Date
DE602007002105D1 true DE602007002105D1 (de) 2009-10-08

Family

ID=38542045

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007002105T Active DE602007002105D1 (de) 2006-04-28 2007-04-04 Halbleiterbauelement

Country Status (6)

Country Link
US (2) US7667272B2 (de)
EP (1) EP1857907B1 (de)
KR (1) KR101373034B1 (de)
CN (1) CN101064496B (de)
DE (1) DE602007002105D1 (de)
TW (1) TWI431931B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7923800B2 (en) * 2006-12-27 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2008270757A (ja) * 2007-03-26 2008-11-06 Semiconductor Energy Lab Co Ltd 半導体装置
WO2009014155A1 (en) 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
US8363365B2 (en) * 2008-06-17 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5448584B2 (ja) * 2008-06-25 2014-03-19 株式会社半導体エネルギー研究所 半導体装置
WO2010035608A1 (en) 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5343510B2 (ja) * 2008-10-29 2013-11-13 ミツミ電機株式会社 半導体装置
JP2011254338A (ja) * 2010-06-03 2011-12-15 Toshiba Corp 半導体装置
US9117958B2 (en) 2010-06-25 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device comprising photoelectric conversion element
JP5646360B2 (ja) * 2011-02-04 2014-12-24 株式会社東芝 半導体装置
CN102136827B (zh) * 2011-05-10 2013-11-06 覃超 可补偿输入失调电压的差分放大器及补偿方法
US8698480B2 (en) 2011-06-27 2014-04-15 Micron Technology, Inc. Reference current distribution
JP2013093565A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 半導体装置
US9841326B2 (en) * 2015-06-17 2017-12-12 Taiwan Semiconductor Manufacturing Co., Ltd. Thermal detection circuit
KR102403383B1 (ko) * 2019-02-28 2022-06-02 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 소스 저항기를 갖는 반도체 디바이스 및 그 제조 방법
US11217526B2 (en) 2019-02-28 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with source resistor and manufacturing method thereof
CN111739886A (zh) * 2019-03-22 2020-10-02 英飞凌科技股份有限公司 具有负载晶体管和感测晶体管的晶体管布置
US11971735B2 (en) * 2019-11-01 2024-04-30 Texas Instruments Incorporated Low area frequency compensation circuit and method

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4334198A (en) 1980-04-24 1982-06-08 Rca Corporation Biasing of transistor amplifier cascades
US4620212A (en) 1982-05-28 1986-10-28 Nec Corporation Semiconductor device with a resistor of polycrystalline silicon
US4686487A (en) * 1986-07-28 1987-08-11 Commodore Business Machines, Inc. Current mirror amplifier
JPH03108758A (ja) * 1989-09-22 1991-05-08 Toshiba Corp ペアトランジスタおよびそれを利用する電子回路
JPH0637558A (ja) 1992-07-20 1994-02-10 Nkk Corp 増幅回路
JP3300534B2 (ja) * 1993-09-13 2002-07-08 株式会社東芝 電子回路
JP3203996B2 (ja) * 1994-11-01 2001-09-04 三菱電機株式会社 電流−電圧変換アンプのテスト回路
JP3444093B2 (ja) * 1996-06-10 2003-09-08 株式会社デンソー 光センサ回路
US6287888B1 (en) * 1997-12-26 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and process for producing photoelectric conversion device
JP3844613B2 (ja) * 1998-04-28 2006-11-15 株式会社半導体エネルギー研究所 薄膜トランジスタ回路およびそれを用いた表示装置
JP3319406B2 (ja) * 1998-09-18 2002-09-03 日本電気株式会社 比較増幅検出回路
US6255897B1 (en) * 1998-09-28 2001-07-03 Ericsson Inc. Current biasing circuit
US5977759A (en) 1999-02-25 1999-11-02 Nortel Networks Corporation Current mirror circuits for variable supply voltages
US7030551B2 (en) * 2000-08-10 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
US7068552B2 (en) 2001-06-21 2006-06-27 Kabushiki Kaisha Toshiba Sense amplifier
JP2003100992A (ja) 2001-06-21 2003-04-04 Toshiba Corp センスアンプ
US7193619B2 (en) * 2001-10-31 2007-03-20 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
JP2003204067A (ja) * 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
JP4030758B2 (ja) * 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6930326B2 (en) * 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
JP4089289B2 (ja) * 2002-05-17 2008-05-28 株式会社日立製作所 画像表示装置
JP4373063B2 (ja) * 2002-09-02 2009-11-25 株式会社半導体エネルギー研究所 電子回路装置
US6876233B1 (en) * 2003-02-15 2005-04-05 Medtronics, Inc. DC cancellation apparatus and method
US7253391B2 (en) * 2003-09-19 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Optical sensor device and electronic apparatus
JP4827396B2 (ja) 2003-10-06 2011-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7495272B2 (en) 2003-10-06 2009-02-24 Semiconductor Energy Labortaory Co., Ltd. Semiconductor device having photo sensor element and amplifier circuit
WO2005114749A1 (en) 2004-05-21 2005-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4817636B2 (ja) 2004-10-04 2011-11-16 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US7492028B2 (en) 2005-02-18 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method of the same, and a semiconductor device

Also Published As

Publication number Publication date
TWI431931B (zh) 2014-03-21
US9041112B2 (en) 2015-05-26
CN101064496B (zh) 2011-07-06
CN101064496A (zh) 2007-10-31
US20070252213A1 (en) 2007-11-01
US7667272B2 (en) 2010-02-23
KR101373034B1 (ko) 2014-03-11
EP1857907A1 (de) 2007-11-21
EP1857907B1 (de) 2009-08-26
TW200805875A (en) 2008-01-16
US20100140456A1 (en) 2010-06-10
KR20070106459A (ko) 2007-11-01

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Legal Events

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