BR9808074A - Componente semicondutor, em particular uma célula solar, e processo para a sua fabricação - Google Patents
Componente semicondutor, em particular uma célula solar, e processo para a sua fabricaçãoInfo
- Publication number
- BR9808074A BR9808074A BR9808074-1A BR9808074A BR9808074A BR 9808074 A BR9808074 A BR 9808074A BR 9808074 A BR9808074 A BR 9808074A BR 9808074 A BR9808074 A BR 9808074A
- Authority
- BR
- Brazil
- Prior art keywords
- solar cell
- semiconductor component
- manufacture
- layer
- semiconductor material
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- NIFIFKQPDTWWGU-UHFFFAOYSA-N pyrite Chemical compound [Fe+2].[S-][S-] NIFIFKQPDTWWGU-UHFFFAOYSA-N 0.000 abstract 2
- 229910052683 pyrite Inorganic materials 0.000 abstract 2
- 239000011028 pyrite Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
"COMPONENTE SEMICONDUTOR, EM PARTICULAR UMA CéLULA SOLAR, E PROCESSO PARA A SUA FABRICAçãO". Trata-se de um componente semicondutor (50), em particular uma célula solar, que tem pelo menos um material semicondutor de base (40) que consiste de uma estrutura policristalina. O material semicondutor de base (40) consiste, pelo menos em parte, de pirita com a composição química FeS~ 2~, e que é purificada com o propósito de alcançar um grau de pureza definido. Consegue-se o máximo benefício com o material semicondutor de base (40) quando ele é produzido a partir de pelo menos uma camada de pirita (51), pelo menos uma camada de boro (52) e pelo menos uma camada de fósforo (53). Um tipo ótimo deriva deste componente semicondutor quando ele é usado como célula solar.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH98810382.6 | 1998-04-29 | ||
| EP98810382A EP0954033A1 (de) | 1998-04-29 | 1998-04-29 | Halbleiterbauelement, insbesondere eine Solarzelle, mit einer Schicht aus Pyrit, sowie Verfahren zu dessen Herstellung |
| PCT/CH1998/000455 WO1999056325A1 (de) | 1998-04-29 | 1998-10-23 | Halbleiterbauelement, insbesondere eine solarzelle, sowie verfahren zu dessen herstellung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| BR9808074A true BR9808074A (pt) | 2000-03-28 |
| BR9808074C2 BR9808074C2 (pt) | 2000-09-05 |
| BR9808074B1 BR9808074B1 (pt) | 2010-02-09 |
Family
ID=8236060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI9808074-1A BR9808074B1 (pt) | 1998-04-29 | 1998-10-23 | componente semicondutor, em particular uma cÉlula solar. |
Country Status (26)
| Country | Link |
|---|---|
| US (1) | US6635942B2 (pt) |
| EP (2) | EP0954033A1 (pt) |
| JP (1) | JP3874429B2 (pt) |
| KR (1) | KR100613524B1 (pt) |
| CN (1) | CN1218405C (pt) |
| AR (1) | AR019111A1 (pt) |
| AT (1) | ATE287576T1 (pt) |
| AU (1) | AU756671B2 (pt) |
| BG (1) | BG64069B1 (pt) |
| BR (1) | BR9808074B1 (pt) |
| CA (1) | CA2275298C (pt) |
| CZ (1) | CZ298589B6 (pt) |
| DE (1) | DE59812504D1 (pt) |
| DK (1) | DK1032949T3 (pt) |
| ES (1) | ES2239406T3 (pt) |
| HU (1) | HU227655B1 (pt) |
| IL (1) | IL131534A (pt) |
| MY (1) | MY124379A (pt) |
| NO (1) | NO993552L (pt) |
| NZ (1) | NZ336848A (pt) |
| PL (1) | PL192742B1 (pt) |
| PT (1) | PT1032949E (pt) |
| RU (1) | RU2219620C2 (pt) |
| TR (1) | TR199903266T1 (pt) |
| TW (1) | TW434915B (pt) |
| WO (1) | WO1999056325A1 (pt) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1300375C (zh) * | 2004-12-07 | 2007-02-14 | 浙江大学 | 电沉积氧化及热硫化合成二硫化铁薄膜的方法 |
| US8093684B2 (en) * | 2006-01-16 | 2012-01-10 | Sharp Kabushiki Kaisha | Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same |
| JP4938314B2 (ja) * | 2006-01-16 | 2012-05-23 | シャープ株式会社 | 光電変換装置および半導体接合素子の製造方法 |
| US20110240108A1 (en) * | 2010-04-02 | 2011-10-06 | Matt Law | Method To Synthesize Colloidal Iron Pyrite (FeS2) Nanocrystals And Fabricate Iron Pyrite Thin Film Solar Cells |
| US10680125B2 (en) * | 2011-11-15 | 2020-06-09 | Nutech Ventures | Iron pyrite nanocrystals |
| JP5377732B2 (ja) * | 2012-09-14 | 2013-12-25 | シャープ株式会社 | 半導体、ｐ型半導体、半導体接合素子、ｐｎ接合素子、および光電変換装置 |
| WO2014209834A2 (en) * | 2013-06-24 | 2014-12-31 | Arizona Board Of Regents On Behalf Of Arizona State University | Method to produce pyrite |
| US9705012B2 (en) * | 2014-03-18 | 2017-07-11 | The United States Of America, As Represented By The Secretary Of The Navy | Method of passivating an iron disulfide surface via encapsulation in zinc sulfide |
| US10181598B2 (en) | 2015-01-05 | 2019-01-15 | University Of Florida Resarch Foundation, Inc. | Lithium ion battery cathodes, methods of making, and methods of use thereof |
| CN105140338B (zh) * | 2015-07-29 | 2017-07-04 | 云南师范大学 | 一种低成本FeS2薄膜太阳电池的制备方法 |
| EP3418717A1 (en) | 2017-06-23 | 2018-12-26 | Cellix Limited | A microfluidic apparatus for separation of particulates in a fluid |
| EP3418721A1 (en) | 2017-06-23 | 2018-12-26 | Cellix Limited | A microfluidic chip |
| EP3418719A1 (en) | 2017-06-23 | 2018-12-26 | Cellix Limited | System and method for improved identification of particles or cells |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3852563A (en) * | 1974-02-01 | 1974-12-03 | Hewlett Packard Co | Thermal printing head |
| US4131486A (en) * | 1977-01-19 | 1978-12-26 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Back wall solar cell |
| US4710786A (en) * | 1978-03-16 | 1987-12-01 | Ovshinsky Stanford R | Wide band gap semiconductor alloy material |
| JPS59115574A (ja) * | 1982-12-23 | 1984-07-04 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| US4589918A (en) * | 1984-03-28 | 1986-05-20 | National Research Institute For Metals | Thermal shock resistant thermoelectric material |
| DE3526910A1 (de) * | 1984-07-27 | 1986-02-13 | Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin | Photoaktive pyritschicht, verfahren zu deren herstellung und verwendung derartiger pyritschichten |
| CA1265922A (en) * | 1984-07-27 | 1990-02-20 | Helmut Tributsch | Photoactive pyrite layer and process for making and using same |
| US4766471A (en) * | 1986-01-23 | 1988-08-23 | Energy Conversion Devices, Inc. | Thin film electro-optical devices |
| FR2694451B1 (fr) * | 1992-07-29 | 1994-09-30 | Asulab Sa | Cellule photovoltaïque. |
| CA2110097C (en) * | 1992-11-30 | 2002-07-09 | Soichiro Kawakami | Secondary battery |
-
1998
- 1998-04-29 EP EP98810382A patent/EP0954033A1/de not_active Withdrawn
- 1998-10-23 CZ CZ0150499A patent/CZ298589B6/cs not_active IP Right Cessation
- 1998-10-23 NZ NZ336848A patent/NZ336848A/en not_active IP Right Cessation
- 1998-10-23 US US09/319,772 patent/US6635942B2/en not_active Expired - Lifetime
- 1998-10-23 ES ES98948658T patent/ES2239406T3/es not_active Expired - Lifetime
- 1998-10-23 CA CA002275298A patent/CA2275298C/en not_active Expired - Fee Related
- 1998-10-23 PL PL337092A patent/PL192742B1/pl unknown
- 1998-10-23 DE DE59812504T patent/DE59812504D1/de not_active Expired - Lifetime
- 1998-10-23 EP EP98948658A patent/EP1032949B1/de not_active Expired - Lifetime
- 1998-10-23 KR KR1019997006817A patent/KR100613524B1/ko not_active Expired - Fee Related
- 1998-10-23 TR TR1999/03266T patent/TR199903266T1/xx unknown
- 1998-10-23 AT AT98948658T patent/ATE287576T1/de active
- 1998-10-23 DK DK98948658T patent/DK1032949T3/da active
- 1998-10-23 AU AU95275/98A patent/AU756671B2/en not_active Ceased
- 1998-10-23 JP JP54086599A patent/JP3874429B2/ja not_active Expired - Fee Related
- 1998-10-23 WO PCT/CH1998/000455 patent/WO1999056325A1/de not_active Ceased
- 1998-10-23 CN CN988024780A patent/CN1218405C/zh not_active Expired - Fee Related
- 1998-10-23 IL IL13153498A patent/IL131534A/en not_active IP Right Cessation
- 1998-10-23 BR BRPI9808074-1A patent/BR9808074B1/pt not_active IP Right Cessation
- 1998-10-23 HU HU0004391A patent/HU227655B1/hu not_active IP Right Cessation
- 1998-10-23 PT PT98948658T patent/PT1032949E/pt unknown
- 1998-10-23 RU RU99118904/28A patent/RU2219620C2/ru not_active IP Right Cessation
-
1999
- 1999-04-26 MY MYPI99001623A patent/MY124379A/en unknown
- 1999-04-27 AR ARP990101934A patent/AR019111A1/es active IP Right Grant
- 1999-04-28 TW TW088106833A patent/TW434915B/zh not_active IP Right Cessation
- 1999-07-20 NO NO993552A patent/NO993552L/no not_active Application Discontinuation
- 1999-09-01 BG BG103706A patent/BG64069B1/bg unknown
Also Published As
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06A | Patent application procedure suspended [chapter 6.1 patent gazette] | ||
| B07A | Application suspended after technical examination (opinion) [chapter 7.1 patent gazette] | ||
| B07B | Technical examination (opinion): publication cancelled [chapter 7.2 patent gazette] |
Free format text: DEVERA SER ANULADA A PUBLICACAO 7.1, EFETIVADA NA RPI NO1967, DE 16/09/2008, POR TER SIDO INDEVIDA |
|
| B06A | Patent application procedure suspended [chapter 6.1 patent gazette] | ||
| B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
| B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 09/02/2010, OBSERVADAS AS CONDICOES LEGAIS. |
|
| B21F | Lapse acc. art. 78, item iv - on non-payment of the annual fees in time | ||
| B24J | Lapse because of non-payment of annual fees (definitively: art 78 iv lpi, resolution 113/2013 art. 12) |