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AU2001267920A1 - Iii group nitride compound semiconductor light emitting element - Google Patents

Iii group nitride compound semiconductor light emitting element

Info

Publication number
AU2001267920A1
AU2001267920A1 AU2001267920A AU6792001A AU2001267920A1 AU 2001267920 A1 AU2001267920 A1 AU 2001267920A1 AU 2001267920 A AU2001267920 A AU 2001267920A AU 6792001 A AU6792001 A AU 6792001A AU 2001267920 A1 AU2001267920 A1 AU 2001267920A1
Authority
AU
Australia
Prior art keywords
light emitting
emitting element
semiconductor light
compound semiconductor
nitride compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001267920A
Inventor
Shinya Asami
Jun Ito
Naoki Shibata
Hiroshi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of AU2001267920A1 publication Critical patent/AU2001267920A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
AU2001267920A 2000-07-03 2001-07-03 Iii group nitride compound semiconductor light emitting element Abandoned AU2001267920A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000-201563 2000-07-03
JP2000201563 2000-07-03
JP2000323231A JP2002084000A (en) 2000-07-03 2000-10-23 Group III nitride compound semiconductor light emitting device
JP2000-323231 2000-10-23
PCT/JP2001/005769 WO2002003517A1 (en) 2000-07-03 2001-07-03 Iii group nitride compound semiconductor light emitting element

Publications (1)

Publication Number Publication Date
AU2001267920A1 true AU2001267920A1 (en) 2002-01-14

Family

ID=26595293

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001267920A Abandoned AU2001267920A1 (en) 2000-07-03 2001-07-03 Iii group nitride compound semiconductor light emitting element

Country Status (8)

Country Link
US (1) US6838706B2 (en)
EP (1) EP1306946A4 (en)
JP (1) JP2002084000A (en)
KR (2) KR100680430B1 (en)
CN (1) CN1286230C (en)
AU (1) AU2001267920A1 (en)
TW (1) TWI242297B (en)
WO (1) WO2002003517A1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002084000A (en) 2000-07-03 2002-03-22 Toyoda Gosei Co Ltd Group III nitride compound semiconductor light emitting device
GB2407702A (en) * 2003-10-28 2005-05-04 Sharp Kk A semiconductor light-emitting device
WO2005086243A1 (en) * 2004-03-08 2005-09-15 Showa Denko K.K. Pn junction type croup iii nitride semiconductor light-emitting device
KR100770491B1 (en) * 2005-03-16 2007-10-25 최운용 Fabrication of Optical Semiconductor Transparent Electrode by Plasma Treatment
JP2006332365A (en) * 2005-05-26 2006-12-07 Toyoda Gosei Co Ltd Group III nitride compound semiconductor light emitting device and light emitting device using the same
JP5025168B2 (en) * 2006-06-08 2012-09-12 昭和電工株式会社 Method for producing group III nitride semiconductor multilayer structure
US7847280B2 (en) * 2007-08-08 2010-12-07 The Regents Of The University Of California Nonpolar III-nitride light emitting diodes with long wavelength emission
KR100972978B1 (en) * 2007-12-13 2010-07-29 삼성엘이디 주식회사 Nitride semiconductor devices
JP4640427B2 (en) * 2008-03-14 2011-03-02 ソニー株式会社 GaN-based semiconductor light-emitting device, light-emitting device assembly, light-emitting device, method for manufacturing GaN-based semiconductor light-emitting device, driving method for GaN-based semiconductor light-emitting device, and image display device
JP4908453B2 (en) * 2008-04-25 2012-04-04 住友電気工業株式会社 Method for fabricating a nitride semiconductor laser
JP5196160B2 (en) * 2008-10-17 2013-05-15 日亜化学工業株式会社 Semiconductor light emitting device
JP5353802B2 (en) * 2010-04-12 2013-11-27 豊田合成株式会社 Semiconductor light emitting device manufacturing method, lamp, electronic device, and mechanical device
JP2012169383A (en) * 2011-02-11 2012-09-06 Toyoda Gosei Co Ltd Group iii nitride semiconductor light-emitting element and method of manufacturing the same
JP2013008803A (en) * 2011-06-23 2013-01-10 Toyoda Gosei Co Ltd Method for manufacturing group iii nitride semiconductor light-emitting element
TWI524551B (en) 2012-11-19 2016-03-01 新世紀光電股份有限公司 Nitride semiconductor structure and semiconductor light emitting device
CN103972343B (en) * 2013-01-25 2017-09-22 新世纪光电股份有限公司 Nitride semiconductor structure and semiconductor light emitting element
JP6436694B2 (en) 2014-09-17 2018-12-12 住友化学株式会社 Manufacturing method of nitride semiconductor template
JP6415909B2 (en) 2014-09-17 2018-10-31 住友化学株式会社 Manufacturing method of nitride semiconductor template
KR102358689B1 (en) * 2015-08-26 2022-02-04 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device
TWI738640B (en) 2016-03-08 2021-09-11 新世紀光電股份有限公司 Semiconductor structure
TWI717386B (en) 2016-09-19 2021-02-01 新世紀光電股份有限公司 Semiconductor device containing nitrogen
CN111200235A (en) * 2020-01-10 2020-05-26 松山湖材料实验室 Preparation method and device of on-chip integrated AlGaN pulse laser

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273366A (en) * 1994-03-28 1995-10-20 Pioneer Electron Corp Method for manufacturing group III nitride light emitting device
US5557115A (en) 1994-08-11 1996-09-17 Rohm Co. Ltd. Light emitting semiconductor device with sub-mount
US5751752A (en) 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
KR100267839B1 (en) * 1995-11-06 2000-10-16 오가와 에이지 Nitride semiconductor devices
JPH1012922A (en) * 1996-06-19 1998-01-16 Toyoda Gosei Co Ltd Group iii nitride semiconductor light emitting element
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JP3314641B2 (en) * 1996-11-29 2002-08-12 日亜化学工業株式会社 Nitride semiconductor laser device
JP3904709B2 (en) * 1997-02-21 2007-04-11 株式会社東芝 Nitride-based semiconductor light-emitting device and method for manufacturing the same
KR19990014304A (en) * 1997-07-30 1999-02-25 아사구사 나오유끼 Semiconductor laser, semiconductor light emitting device and manufacturing method thereof
JPH11340580A (en) * 1997-07-30 1999-12-10 Fujitsu Ltd Semiconductor laser, semiconductor light emitting device, and method of manufacturing the same
JPH11312841A (en) 1998-04-28 1999-11-09 Nichia Chem Ind Ltd Nitride semiconductor laser device
JPH11330547A (en) 1998-05-15 1999-11-30 Matsushita Electron Corp Semiconductor light emitting element and its manufacture
JP2000077795A (en) * 1998-06-17 2000-03-14 Matsushita Electric Ind Co Ltd Semiconductor laser device
US6606335B1 (en) * 1998-07-14 2003-08-12 Fujitsu Limited Semiconductor laser, semiconductor device, and their manufacture methods
JP2000091631A (en) * 1998-09-10 2000-03-31 Toyoda Gosei Co Ltd Gallium nitride-based compound semiconductor light emitting element
JP3703975B2 (en) * 1998-09-10 2005-10-05 豊田合成株式会社 Gallium nitride compound semiconductor light emitting device
JP2000100735A (en) * 1998-09-25 2000-04-07 Sumitomo Chem Co Ltd Group 3-5 compound semiconductor
JP3399374B2 (en) * 1998-10-23 2003-04-21 昭和電工株式会社 Light emitting device with quantum well structure
JP2000286448A (en) * 1999-03-31 2000-10-13 Toyoda Gosei Co Ltd Group III nitride compound semiconductor light emitting device
JP4465748B2 (en) 1999-06-30 2010-05-19 豊田合成株式会社 Method for producing group III nitride compound semiconductor device
JP2002084000A (en) 2000-07-03 2002-03-22 Toyoda Gosei Co Ltd Group III nitride compound semiconductor light emitting device

Also Published As

Publication number Publication date
CN1286230C (en) 2006-11-22
KR20060022733A (en) 2006-03-10
TWI242297B (en) 2005-10-21
KR100680430B1 (en) 2007-02-08
US20030189218A1 (en) 2003-10-09
US6838706B2 (en) 2005-01-04
CN1440578A (en) 2003-09-03
EP1306946A1 (en) 2003-05-02
JP2002084000A (en) 2002-03-22
WO2002003517A1 (en) 2002-01-10
KR20030011147A (en) 2003-02-06
EP1306946A4 (en) 2004-12-29

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