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AU2000240180A1 - Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method - Google Patents

Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method

Info

Publication number
AU2000240180A1
AU2000240180A1 AU2000240180A AU4018000A AU2000240180A1 AU 2000240180 A1 AU2000240180 A1 AU 2000240180A1 AU 2000240180 A AU2000240180 A AU 2000240180A AU 4018000 A AU4018000 A AU 4018000A AU 2000240180 A1 AU2000240180 A1 AU 2000240180A1
Authority
AU
Australia
Prior art keywords
processing
thin silicon
silicon films
solidification method
surface planarization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2000240180A
Inventor
Mark A. Crowder
James S. Im
Robert S. Sposili
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Columbia University in the City of New York
Original Assignee
Columbia University in the City of New York
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Columbia University in the City of New York filed Critical Columbia University in the City of New York
Publication of AU2000240180A1 publication Critical patent/AU2000240180A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • H10P95/00—
    • H10P14/3816—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/3568—Modifying rugosity
    • B23K26/3576—Diminishing rugosity, e.g. grinding; Polishing; Smoothing
    • H10P14/3411—
    • H10P14/381—
    • H10P14/382—
    • H10P34/42—
    • H10P50/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
AU2000240180A 2000-03-21 2000-03-21 Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method Abandoned AU2000240180A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2000/007479 WO2001071791A1 (en) 2000-03-21 2000-03-21 Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method

Publications (1)

Publication Number Publication Date
AU2000240180A1 true AU2000240180A1 (en) 2001-10-03

Family

ID=21741175

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2000240180A Abandoned AU2000240180A1 (en) 2000-03-21 2000-03-21 Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method

Country Status (10)

Country Link
EP (1) EP1196947A4 (en)
JP (1) JP4220156B2 (en)
KR (1) KR100672909B1 (en)
CN (1) CN1186802C (en)
AU (1) AU2000240180A1 (en)
CA (1) CA2374498A1 (en)
HK (1) HK1046469A1 (en)
MX (1) MXPA01011852A (en)
TW (1) TW499717B (en)
WO (1) WO2001071791A1 (en)

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US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
KR100333275B1 (en) * 1999-05-20 2002-04-24 구본준, 론 위라하디락사 TFT of LCD device and the same methode
US6860939B2 (en) 2002-04-23 2005-03-01 Sharp Laboratories Of America, Inc. Semiconductor crystal-structure-processed mechanical devices, and methods and systems for making
US7125451B2 (en) 2002-04-23 2006-10-24 Sharp Laboratories Of America, Inc. Crystal-structure-processed mechanical devices and methods and systems for making
US7128783B2 (en) 2002-04-23 2006-10-31 Sharp Laboratories Of America, Inc. Thin-film crystal-structure-processed mechanical devices, and methods and systems for making
US7135070B2 (en) 2002-04-23 2006-11-14 Sharp Laboratories Of America, Inc. Monolithic stacked/layered crystal-structure-processed mechanical, and combined mechanical and electrical, devices and methods and systems for making
US7156916B2 (en) 2002-04-23 2007-01-02 Sharp Laboratories Of America, Inc. Monolithic integrated crystal-structure-processed mechanical, and combined mechanical and electrical devices, and methods and systems for making
WO2004017381A2 (en) 2002-08-19 2004-02-26 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
KR20050047103A (en) 2002-08-19 2005-05-19 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 A single-shot semiconductor processing system and method having various irradiation patterns
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
TWI359441B (en) 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
US7364952B2 (en) 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
TWI366859B (en) 2003-09-16 2012-06-21 Univ Columbia System and method of enhancing the width of polycrystalline grains produced via sequential lateral solidification using a modified mask pattern
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
JP2005129769A (en) 2003-10-24 2005-05-19 Hitachi Ltd Semiconductor thin film modification method, modified semiconductor thin film and evaluation method thereof, thin film transistor formed with the semiconductor thin film, and image display device having a circuit configured using the thin film transistor
JP2007165716A (en) 2005-12-15 2007-06-28 Advanced Lcd Technologies Development Center Co Ltd Laser crystallization apparatus and crystallization method
JP2009032969A (en) * 2007-07-27 2009-02-12 Sharp Corp Semiconductor thin film manufacturing apparatus, method thereof, semiconductor thin film and semiconductor element produced by the method
KR20100074193A (en) 2007-09-21 2010-07-01 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 Collections of laterally crystallized semiconductor islands for use in thin film transistors
KR20100105606A (en) 2007-11-21 2010-09-29 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 Systems and methods for preparation of epitaxially textured thick films
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
CN103745925A (en) * 2013-11-14 2014-04-23 上海和辉光电有限公司 Planarization polysilicon film manufacturing method
US20160074968A1 (en) * 2014-09-11 2016-03-17 Suss Microtec Photonic Systems Inc. Laser etching system including mask reticle for multi-depth etching
TWI577488B (en) * 2014-11-17 2017-04-11 財團法人工業技術研究院 Surface processing method
CN104779139A (en) * 2015-03-31 2015-07-15 深超光电（深圳）有限公司 Manufacturing method of semi-conductor thin film and manufacturing method of thin film transistor
CN106298451A (en) * 2016-08-18 2017-01-04 昆山国显光电有限公司 Laser crystallization method and device
WO2019146021A1 (en) * 2018-01-24 2019-08-01 ギガフォトン株式会社 Laser processing method and laser processing system

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JP2569711B2 (en) * 1988-04-07 1997-01-08 株式会社ニコン Exposure control device and exposure method using the same
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JPH0433327A (en) * 1990-05-30 1992-02-04 Kyocera Corp Forming method of semiconductor ctystallized film
JP2973492B2 (en) * 1990-08-22 1999-11-08 ソニー株式会社 Crystallization method of semiconductor thin film
US5529951A (en) * 1993-11-02 1996-06-25 Sony Corporation Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation
US5496768A (en) * 1993-12-03 1996-03-05 Casio Computer Co., Ltd. Method of manufacturing polycrystalline silicon thin film
JPH07249591A (en) * 1994-03-14 1995-09-26 Matsushita Electric Ind Co Ltd Laser annealing method for semiconductor thin film and thin film semiconductor device
JP3326654B2 (en) * 1994-05-02 2002-09-24 ソニー株式会社 Method of manufacturing semiconductor chip for display
TW297138B (en) * 1995-05-31 1997-02-01 Handotai Energy Kenkyusho Kk
JP3204986B2 (en) * 1996-05-28 2001-09-04 ザ トラスティース オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク Crystallization of semiconductor film region on substrate and device manufactured by this method
GB9819338D0 (en) * 1998-09-04 1998-10-28 Philips Electronics Nv Laser crystallisation of thin films
US6573531B1 (en) * 1999-09-03 2003-06-03 The Trustees Of Columbia University In The City Of New York Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures
US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification

Also Published As

Publication number Publication date
JP4220156B2 (en) 2009-02-04
JP2003528463A (en) 2003-09-24
WO2001071791A1 (en) 2001-09-27
CN1186802C (en) 2005-01-26
KR100672909B1 (en) 2007-01-22
MXPA01011852A (en) 2002-05-06
KR20020002466A (en) 2002-01-09
HK1046469A1 (en) 2003-01-10
TW499717B (en) 2002-08-21
EP1196947A1 (en) 2002-04-17
CA2374498A1 (en) 2001-09-27
EP1196947A4 (en) 2003-08-13
CN1363117A (en) 2002-08-07

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