[go: up one dir, main page]

AU2001280127A1 - Method of processing silicon single crystal ingot - Google Patents

Method of processing silicon single crystal ingot

Info

Publication number
AU2001280127A1
AU2001280127A1 AU2001280127A AU8012701A AU2001280127A1 AU 2001280127 A1 AU2001280127 A1 AU 2001280127A1 AU 2001280127 A AU2001280127 A AU 2001280127A AU 8012701 A AU8012701 A AU 8012701A AU 2001280127 A1 AU2001280127 A1 AU 2001280127A1
Authority
AU
Australia
Prior art keywords
single crystal
silicon single
crystal ingot
processing silicon
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001280127A
Inventor
Masanori Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd, Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of AU2001280127A1 publication Critical patent/AU2001280127A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H10P52/00—

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
AU2001280127A 2000-08-28 2001-08-23 Method of processing silicon single crystal ingot Abandoned AU2001280127A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-257437 2000-08-28
JP2000257437A JP2002075923A (en) 2000-08-28 2000-08-28 Processing method of silicon single crystal ingot
PCT/JP2001/007226 WO2002019404A1 (en) 2000-08-28 2001-08-23 Method of processing silicon single crystal ingot

Publications (1)

Publication Number Publication Date
AU2001280127A1 true AU2001280127A1 (en) 2002-03-13

Family

ID=18745894

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001280127A Abandoned AU2001280127A1 (en) 2000-08-28 2001-08-23 Method of processing silicon single crystal ingot

Country Status (5)

Country Link
US (1) US20030181023A1 (en)
JP (1) JP2002075923A (en)
AU (1) AU2001280127A1 (en)
TW (1) TW507283B (en)
WO (1) WO2002019404A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004335955A (en) * 2003-05-12 2004-11-25 Sumitomo Mitsubishi Silicon Corp METHOD FOR DETECTING CONCENTRATION OF Cu ON SILICON SUBSTRATE
JP2005059354A (en) * 2003-08-11 2005-03-10 Sumitomo Electric Ind Ltd Method for producing a single crystal mass for slicing a semiconductor wafer
JP2007118581A (en) * 2005-09-28 2007-05-17 Hiroshi Ishizuka Hard-brittle material thin sheet and production method thereof
KR100892208B1 (en) * 2007-07-03 2009-04-07 백지숙 Device for curved webbing belt tip
CN102049818B (en) * 2009-10-28 2013-09-11 上海日进机床有限公司 Cutting method for crystalline silicon ingot
DE102012210047A1 (en) * 2012-06-14 2013-12-19 Crystal-N Gmbh Process for cutting a single crystal
CN103921361A (en) * 2014-04-29 2014-07-16 南通综艺新材料有限公司 Steel wire technology for cutting solar silicon wafers
JP7148437B2 (en) * 2019-03-01 2022-10-05 信越半導体株式会社 Work cutting method and work cutting device
JP2025034956A (en) 2023-08-31 2025-03-13 株式会社レゾナック SiC single crystal boule, method for producing SiC single crystal boule, and method for producing SiC substrate
CN117103474A (en) * 2023-09-07 2023-11-24 常州时创能源股份有限公司 Half-sheet cutting process

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS3924990B1 (en) * 1962-02-14 1964-11-06
JPS49111290A (en) * 1973-02-26 1974-10-23
US4089705A (en) * 1976-07-28 1978-05-16 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Hexagon solar power panel
JPH06103674B2 (en) * 1987-06-19 1994-12-14 住友電気工業株式会社 Method and apparatus for adjusting angle of semiconductor single crystal ingot.
DE3811091A1 (en) * 1988-03-31 1989-10-12 Heliotronic Gmbh METHOD FOR COMMANDING LOW CONTAMINATION OF SOLID, PIECE OF SILICONE
DE4102484A1 (en) * 1991-01-29 1992-07-30 Bayer Ag METHOD FOR THE PRODUCTION OF METAL DISC AND THE USE OF SILICONE DISC
JPH07314435A (en) * 1994-05-19 1995-12-05 M Setetsuku Kk Wire saw device
JPH11288881A (en) * 1998-04-02 1999-10-19 Oki Electric Ind Co Ltd Manufacture of rectangular wafer
JP3498638B2 (en) * 1999-06-18 2004-02-16 三菱住友シリコン株式会社 Wire saw equipment

Also Published As

Publication number Publication date
JP2002075923A (en) 2002-03-15
US20030181023A1 (en) 2003-09-25
WO2002019404A1 (en) 2002-03-07
TW507283B (en) 2002-10-21

Similar Documents

Publication Publication Date Title
EP1347083A4 (en) Silicon single crystal wafer and method for producing silicon single crystal
EP1193333A4 (en) Method for preparing silicon single crystal and silicon single crystal
AU2002347705A1 (en) High resistivity silicon carbide single crystal and method of producing it
AU770276C (en) Polycrystalline silicon and process and apparatus for producing the same
AU2002303885A1 (en) Method and apparatus to correct wafer drift
AU2001253308A1 (en) System for the preferential removal of silicon oxide
EP1270769A4 (en) Method for producing silicon single crystal having no flaw
AU2001288042A1 (en) High speed silicon etching method
EP1403404A4 (en) Single crystal silicon carbide and method for producing the same
AU1801100A (en) Method for growing single crystal of silicon carbide
EP1310583A4 (en) Silicon single crystal wafer and method for manufacturing the same
AU2002306289A1 (en) Method of manufacturing silicon
AU2001240043A1 (en) Apparatus and method for fabrication of photonic crystals
AU2003290909A1 (en) Method of producing silicon monocrystal
AU4277700A (en) Method for removal of sic
AU2001285142A1 (en) Method and apparatus for purifying silicon
EP1275755A4 (en) Silicon wafer and method for producing silicon single crystal
AU1801000A (en) Method of manufacturing single-crystal silicon carbide
EP1193332A4 (en) Method for producing silicon single crystal
EP1431425A4 (en) Single crystal semiconductor manufacturing apparatus and method, and single crystal ingot
EP1199387A4 (en) Method for growing single crystal of semiconductor
AU2001280127A1 (en) Method of processing silicon single crystal ingot
AU2003301326A1 (en) Method of measuring point defect distribution of silicon single crystal ingot
AU2001239776A1 (en) Silicon wafer manufacturing system and method
EP0990718A4 (en) Method of producing silicon single crystal and single crystal silicon wafer