[go: up one dir, main page]

WO2019080875A1 - Masque - Google Patents

Masque

Info

Publication number
WO2019080875A1
WO2019080875A1 PCT/CN2018/111670 CN2018111670W WO2019080875A1 WO 2019080875 A1 WO2019080875 A1 WO 2019080875A1 CN 2018111670 W CN2018111670 W CN 2018111670W WO 2019080875 A1 WO2019080875 A1 WO 2019080875A1
Authority
WO
WIPO (PCT)
Prior art keywords
holes
hole
equal
effective
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/111670
Other languages
English (en)
Chinese (zh)
Inventor
苏君海
龚建国
吴俊雄
冉应刚
柯贤军
李建华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Truly Huizhou Smart Display Ltd
Original Assignee
Truly Huizhou Smart Display Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Truly Huizhou Smart Display Ltd filed Critical Truly Huizhou Smart Display Ltd
Priority to US16/758,418 priority Critical patent/US20200340093A1/en
Publication of WO2019080875A1 publication Critical patent/WO2019080875A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features

Definitions

  • the present application relates to the field of organic light emitting display manufacturing technology, and in particular to a mask.
  • the most influential process of the AMOLED (Active-matrix organic light emitting diode) production process is the evaporation process.
  • the basic process of the evaporation process is to heat the organic material to evaporate the organic material.
  • the through holes etched by the high-precision fine mask are evaporated onto the glass substrate to form a light-emitting unit.
  • High-precision fine masks are usually fabricated by etching methods.
  • the high-precision fine mask thickness is ⁇ 40um. Due to its small thickness, the traditional high-precision fine mask is very soft and extremely deformable.
  • the conventional high-precision fine mask design usually requires setting a Dummy area outside the effective area of the evaporation, and reducing the high-precision fine mask through the Dummy area.
  • the deformation of the traditional high-precision fine mask is due to the fact that there is a physical part that is not etched between the effective area and the Dummy, resulting in different mechanical properties of the high-precision fine mask. Under the influence of the force of the net, wrinkles are likely to occur, and the generation of wrinkles will cause color mixing of the vapor deposition products, and the color mixture will seriously affect the yield of the AMOLED.
  • a mask is provided.
  • a mask comprising: a reserved area and at least one effective evaporation zone, the reserved area being disposed outside of the effective evaporation zone;
  • the at least one effective evaporation zone is provided with a plurality of first through holes
  • the reserved area is provided with a plurality of second through holes, the second through hole has the same shape as the first through hole, and the size of the second through hole and the size of the first through hole Equal, and the spacing between the second through holes is equal to the spacing between the first through holes.
  • each of the first through holes is disposed in a rectangular array
  • each of the second through holes is disposed in a rectangular array, and a row spacing of the second through holes and a line spacing of the first through holes Equally, a column pitch of the second through holes is equal to a column pitch of the first through holes, and at least a portion of the second through holes are aligned with the first through holes.
  • the row spacing of the first vias is equal to the column spacing.
  • the effective vapor deposition zone has a square shape.
  • the effective vapor deposition zone has a circular shape.
  • the effective evaporation zone has an irregular shape.
  • the second through hole extends through two opposite surfaces of the reserved area.
  • the first through hole and the second through hole respectively have a circular cross section, and an aperture of the first through hole and an aperture of the second through hole are equal.
  • first through hole and the second through hole respectively have a square cross section, and the width of the first through hole and the width of the second through hole are equal.
  • the first through hole and the second through hole respectively have a polygonal cross section, and a width of the first through hole and a width of the second through hole are equal.
  • each of the first through holes is disposed in a rectangular array
  • each of the second through holes is disposed in a rectangular array
  • a row spacing of the second through holes and a line spacing of the first through holes Equally, the column spacing of the second through holes is equal to the column spacing of the first through holes, and at least a portion of the second through holes are aligned with the first through holes, the first through holes
  • the row spacing is equal to the column spacing
  • the effective evaporation zone has a square shape
  • the second through hole extends through two opposite surfaces of the reserved area
  • the holes each have a circular cross section, and the apertures of the first through holes and the apertures of the second through holes are equal.
  • the mask plate is provided with a second through hole in a reserved area outside the effective vapor deposition zone. Since the shape, size and spacing of the second through hole are the same as the shape, size and spacing of the first through hole, the reservation is reserved.
  • the zone has the same mechanical properties as the effective vapor deposition zone. Therefore, the reserved zone and the effective vapor deposition zone have the same stress characteristics, so that wrinkles are not easily generated between the reserved zone and the effective vapor deposition zone, thereby effectively avoiding pixel color mixing. The evaporation effect is better and the yield of AMOLED is improved.
  • FIG. 1 is a schematic structural view of a mask according to an embodiment.
  • a mask comprising a reserved area and at least one effective evaporation zone, the reserved area being disposed outside of the effective evaporation zone; the at least one effective evaporation zone is provided with a plurality of first passes a hole having a second through hole having a shape identical to a shape of the first through hole, and a size of the second through hole and the first through hole The dimensions are equal, and the spacing between the second through holes is equal to the spacing between the first through holes.
  • the second through hole is opened in the reserved area outside the effective evaporation zone, and the shape, size, and spacing of the second through hole are the same as the shape, size, and spacing of the first through hole, so reserved
  • the zone has the same mechanical properties as the effective vapor deposition zone. Therefore, the reserved zone and the effective vapor deposition zone have the same stress characteristics, so that wrinkles are not easily generated between the reserved zone and the effective vapor deposition zone, thereby effectively avoiding pixel color mixing. The evaporation effect is better and the yield of AMOLED is improved.
  • a mask 10 including: a reserved area 120 and an effective evaporation zone 110, the reserved area 120 being disposed in the effective evaporation zone 110.
  • the plurality of first through holes 111 are defined in the effective vapor deposition zone 110; the plurality of second through holes 121 are defined in the reserved area 120, and the shape of the second through holes 121 and the first through holes 111 are The shape of the second through hole 121 is equal to the size of the first through hole 111, and the spacing between the second through holes 121 and the distance between the first through holes 111 equal.
  • the cross-sectional shape of the second through hole 121 is the same as the cross-sectional shape of the first through hole 111, and the cross-sectional shape of the second through hole 121 is the same as the cross-sectional shape of the first through hole 111.
  • the width of the second through hole 121 is equal to the width of the first through hole 111, for example, the width of the cross section of the second through hole 121 and the width of the cross section of the first through hole 111.
  • the spacing between the two of the second through holes 121 is equal to the spacing between the two of the first through holes 111.
  • the mask 10 is divided into a reserved area 120 and an effective evaporation area 110.
  • the effective evaporation area 110 is an effective evaporation area for vapor deposition to form effective pixels, for example, effective steaming.
  • the plating zone 110 is used for vapor deposition of the pixel pattern, and the evaporated organic material is evaporated onto the substrate through the first through hole 111 of the effective evaporation zone 110, and the first through hole 111 is a pixel hole for making the organic organic The material penetrates and is evaporated on the substrate.
  • the reserved area 120 is a non-vapor deposition area, and the reserved area 120 may also be referred to as a Dummy area.
  • the reserved area 120 can be regarded as an area formed by the mask sheet 10 extending outside the effective vapor deposition zone 110, and the reserved area 120 is not used for evaporation.
  • the second through hole 121 is not provided in the reserved area 120, but the second through hole 121 is not used for evaporation, that is, the second through hole 121 does not pass through the evaporated organic material, and is in use.
  • the second through hole 121 of the reserved area 120 is blocked to prevent the evaporated organic material from passing through the second through hole 121 of the reserved area 120. That is to say, in the masking process 10 in the present embodiment, the evaporation of the pixel pattern is performed only in the effective vapor deposition zone 110 during the vapor deposition process, and the reserved area 120 does not vaporize the pixel pattern.
  • the second through hole 121 is formed in the reserved area 120, since the shape of the second through hole 121 is the same as the shape of the first through hole 111, the size of the second through hole 121 is equal to the size of the first through hole 111, and the second The spacing between the through holes 121 is equal to the spacing between the first through holes 111, and therefore, the reserved area 120 has the same structure as the effective vapor deposition area 110, and therefore, the reserved area 120 has the effective evaporation area 110.
  • the reserved region 120 and the effective vapor deposition zone 110 have the same stress characteristics, so that the reserved region 120 and the effective vapor deposition zone 110 are not easily wrinkled under the influence of the tensioning force, thereby effectively avoiding pixel color mixing, thereby making it possible to avoid pixel color mixing.
  • the evaporation effect is better, and the yield of AMOLED is improved.
  • the mask 10 further includes a barrier film having the same shape as the reserved region 120.
  • the shape of the film is aligned with the reserved area 120 and abuts the reserved area 120.
  • the film is disposed in the second through hole 121.
  • the barrier film can isolate the organic material of the reserved area 120, and the organic material is prevented from passing through the second through hole 121, thereby further improving the vapor deposition effect.
  • each of the first through holes 111 is disposed in a rectangular array
  • each of the second through holes 121 is disposed in a rectangular array
  • a row spacing of the second through holes 121 and the first through holes 111 are The row spacing is equal
  • the column spacing of the second vias 121 is equal to the column spacing of the first vias 111
  • at least a portion of the second vias 121 are aligned with the first vias.
  • the first through holes 111 are aligned, for example, at least one row of the second through holes 121 is aligned with the row of the first through holes 111, for example, at least one column of the second through holes 121 is aligned with the row of the first through holes 111. That is, a portion of the second through holes 121 corresponding to the first through holes 111 in the reserved area 120, each row is aligned with a row of first through holes 111, and each column is aligned with a column of the first through holes 111.
  • each of the first through holes 111 is arranged in a plurality of rows and columns, and the row spacing between the first through holes 111 of the adjacent two rows is equal, and the first through holes of the adjacent two columns
  • the column spacings between the 111 are equal to each other;
  • the second through holes 121 are arranged in a plurality of rows and columns, and the row spacing of the second through holes 121 is equal to the row spacing of the first through holes 111, and the columns of the second through holes 121 are arranged.
  • the pitch is equal to the column pitch of the first through holes 111, and for the second through holes 121 partially aligned with the first through holes 111, each row of the second through holes 121 is aligned with the row of first through holes 111, each column
  • the two through holes 121 are aligned with the first through holes 111, so that the distribution structure of the second through holes 121 of the reserved area 120 is the same as that of the first through holes 111 of the effective vapor deposition zone 110, so that the reserved area
  • the 120 has the same structure as the effective vapor deposition zone 110, so that the reserved area 120 has the same mechanical properties as the effective vapor deposition zone 110, further making the evaporation effect better.
  • the row spacing of the first via holes 111 is equal to the column pitch, that is, the row spacing of the first via holes 111 is equal to the column pitch of the first via holes 111, and is in the effective evaporation region 110 in this embodiment.
  • the first through holes 111 are equally spaced in the lateral direction and the longitudinal direction.
  • the row spacing of the second through holes 121 is equal to the column spacing.
  • the row spacing of the second through holes 121 is equal to the spacing of the second through holes 121.
  • the column spacing, the second through holes 121 of the reserved area 120 are also equally spaced in the lateral direction and the longitudinal direction, so that the opening distances of the reserved area 120 and the effective evaporation area 110 are equal, which is advantageous for further avoiding the mask.
  • the plate 10 produces wrinkles under the influence of the tensioning force, which further makes the evaporation effect better.
  • the display screen of the mobile phone may be square or rectangular, and the electronic The display on the watch or smart meter can be rectangular or circular, and for the display such as camera and other sensors on the display panel, the display can be irregular shape, in order to adapt to different display requirements, in one implementation
  • the shape of the effective evaporation zone 110 is square.
  • the shape of the reserved area 120 is a square shape, and the reserved area 120 of the mouth shape surrounds the effective evaporation zone 110 of the square.
  • the effective evaporation zone 110 is circular in shape.
  • the reserved area 120 has a circular shape, and the annular reserved area 120 surrounds the circular effective evaporation zone 110, so that the effective evaporation zone 110 is evaporated on the substrate.
  • the display area of the corresponding display screen is circular.
  • the effective evaporation zone 110 has an irregular shape.
  • the reserved area 120 is a hollow hollow irregular shape, and the shape of the reserved area 120 matches the shape of the effective vapor deposition area 110, and the reserved area 120 surrounds the irregular shape.
  • the vapor deposition zone 110 is such that, by the vapor deposition of the effective vapor deposition zone 110, an irregularly shaped pixel region is formed on the substrate, and the display area of the corresponding display screen is irregular.
  • the positional accuracy of the first through hole 111 is less than 10 ⁇ m, for example, the width of the first through hole 111 is greater than or equal to 20 ⁇ m, for example, the first through hole 111 The width is less than or equal to 30 ⁇ m.
  • the positional accuracy of the second through hole 121 is less than 10 ⁇ m, for example, the width of the second through hole 121 is greater than or equal to 20 ⁇ m, for example, the width of the second through hole 121 is less than or equal to 30 ⁇ m.
  • the second through hole 121 penetrates through two opposite surfaces of the reserved area 120, that is, the second through hole 121 is a through hole, and both ends of the second through hole 121 are transparent.
  • the structure of the second through hole 121 is made the same as that of the first through hole 111, so that the reserved area 120 has the same mechanical properties as the effective vapor deposition zone 110, so that the reserved area 120 and the effective evaporation area 110 are It is not easy to produce wrinkles between them, effectively avoiding pixel color mixing, which makes the evaporation effect better.
  • the through holes on the mask 10 may be formed by etching.
  • the second The through hole 121 is a non-permeate hole.
  • the second through hole 121 is provided with a stopper film.
  • the two ends of the second through hole 121 are not transparent, specifically, the mask 10 is During the etching, the second via hole 121 is formed by half etching on the reserved region 120, and the effective vapor deposition region 110 is completely etched to form the first via hole 111, that is, when the reserved region 120 is etched, the second The through hole 121 is etched to form a stopper film, so that the two ends of the second through hole 121 are not transparent, and thus, the reserved area 120 is provided with a second pass having the same shape and size as the first through hole 111 of the effective vapor deposition zone 110.
  • the reserved area 120 has the same mechanical properties as the effective evaporation zone 110, effectively avoiding wrinkles, and since the second through hole 121 is not transparent, the organic material after evaporation can be effectively prevented, so , can avoid evaporation of the position on the corresponding substrate of the reserved area 120 Material, thus making vapor deposition better.
  • the first through holes 111 may be circular holes, square holes or polygonal holes for vapor deposition to form different pixel patterns.
  • the first through holes 111 and the second pass The holes 121 have a circular cross section, respectively, and the apertures of the first through holes 111 and the apertures of the second through holes 121 are equal.
  • the first through hole 111 and the second through hole 121 are respectively circular in cross section.
  • the first through hole 111 and the second through hole 121 are respectively circular holes.
  • the first through hole 111 and the second through hole 121 respectively have a square cross section, and the width of the first through hole 111 and the width of the second through hole 121 are equal.
  • the first through hole 111 and the second through hole 121 are respectively square in cross section.
  • the first through hole 111 and the second through hole 121 are respectively square holes.
  • the first through hole 111 and the second through hole 121 respectively have a polygonal cross section, and the width of the first through hole 111 and the width of the second through hole 121 are equal.
  • the first through hole 111 and the second through hole 121 are respectively polygonal in cross section.
  • the first through hole 111 and the second through hole 121 are respectively polygonal holes.
  • the first through hole 111 is a circular hole, a square hole or a polygonal hole. In other embodiments, it may also be an irregularly shaped through hole, which is not cumbersome in this embodiment, so that it can adapt to different pixel patterns.
  • the evaporation requirement since the second through hole 121 has the same shape as the first through hole 111, the reserved area 120 and the effective evaporation area 110 have the same stress characteristics, so that the reserved area 120 and the effective evaporation area 110 is not easy to produce wrinkles under the influence of the tension of the net force, effectively avoiding the color mixing of the pixels, so that the evaporation effect is better.
  • the effective evaporation zone may be multiple, for example, two effective evaporation zones, two effective evaporation zones are adjacently disposed, and the reserved zone is disposed outside the two effective evaporation zones. And between two effective evaporation zones. For another example, there are three effective vapor deposition zones, and, for example, four effective vapor deposition zones. For the implementation of the plurality of effective vapor deposition zones, it is not cumbersome to describe in the embodiment that the number of the effective vapor deposition zones can be formed by etching on the mask according to the display requirements of the display screen, and the reserved area is set and effectively steamed.
  • the first through holes of the plating zone are shaped, sized, and spaced apart by the second through holes such that the reserved regions and the effective vapor deposition zones have the same stress characteristics.
  • the entire mask has a through hole as a whole, and the conventional mask is different only in the effective vapor deposition zone.
  • the pixel opening of the effective evaporation zone portion of the entire mask is identical to the pixel opening of the non-effective area (reserved area), and the entire mask is completely filled with the through holes, so that the high-precision fine mask is entirely
  • the distribution of the through holes is relatively uniform, so that the overall mechanical properties of the mask in the effective evaporation zone and the reserved area are consistent, for example, the effective vapor deposition zone and the reserved zone have the same performance parameters in elastic modulus and shear modulus. Therefore, the high-precision fine mask is deformed uniformly under the action of the tensioning force, thereby avoiding the wrinkles of the high-precision fine mask and reducing the color mixing of the product illuminating pixels.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un masque (10), comprenant une région de maquette (120) et au moins une région de dépôt effectif (110), la région de maquette (120) étant disposée au niveau d'un côté externe de la région de dépôt effectif (110) ; de multiples premiers trous traversants (111) sont disposés dans ladite région de dépôt effectif (110) ; de multiples seconds trous traversants (121) sont disposés dans la région de maquette (120), les seconds trous traversants (121) ayant une forme identique aux premiers trous traversants (111), les dimensions des seconds trous traversants (121) étant égales aux dimensions des premiers trous traversants (111), et l'espacement entre les seconds trous traversants (121) étant identique à l'espacement entre les premiers trous traversants (111).
PCT/CN2018/111670 2017-10-25 2018-10-24 Masque Ceased WO2019080875A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/758,418 US20200340093A1 (en) 2017-10-25 2018-10-24 Mask

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201711006705.4 2017-10-25
CN201711006705.4A CN107815641B (zh) 2017-10-25 2017-10-25 掩膜板

Publications (1)

Publication Number Publication Date
WO2019080875A1 true WO2019080875A1 (fr) 2019-05-02

Family

ID=61608592

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/111670 Ceased WO2019080875A1 (fr) 2017-10-25 2018-10-24 Masque

Country Status (3)

Country Link
US (1) US20200340093A1 (fr)
CN (1) CN107815641B (fr)
WO (1) WO2019080875A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107815641B (zh) * 2017-10-25 2020-05-19 信利（惠州）智能显示有限公司 掩膜板
CN108642440B (zh) * 2018-05-14 2019-09-17 昆山国显光电有限公司 掩膜板及掩膜组件
CN110396660B (zh) 2019-08-30 2021-10-08 昆山国显光电有限公司 掩膜板及掩膜板制备方法
CN113302330A (zh) * 2019-09-12 2021-08-24 京东方科技集团股份有限公司 掩膜装置及其制造方法、蒸镀方法、显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102201550A (zh) * 2010-03-17 2011-09-28 三星移动显示器株式会社 单元掩模、掩模组件和制造显示设备的方法
CN103014618A (zh) * 2012-12-25 2013-04-03 唐军 蒸镀用掩模板及其制造方法
CN104846328A (zh) * 2014-02-14 2015-08-19 三星显示有限公司 掩模框架组件及其制造方法
CN205576262U (zh) * 2016-05-09 2016-09-14 鄂尔多斯市源盛光电有限责任公司 一种掩膜板
CN107460436A (zh) * 2017-07-25 2017-12-12 武汉华星光电半导体显示技术有限公司 金属网板及蒸镀掩膜装置
CN107815641A (zh) * 2017-10-25 2018-03-20 信利（惠州）智能显示有限公司 掩膜板

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004055231A (ja) * 2002-07-17 2004-02-19 Dainippon Printing Co Ltd 有機ｅｌ素子製造に用いる真空蒸着用多面付けメタルマスク
KR102000718B1 (ko) * 2012-11-15 2019-07-19 삼성디스플레이 주식회사 박막 증착용 마스크 조립체 및 이의 제조 방법
CN203021638U (zh) * 2012-12-25 2013-06-26 唐军 蒸镀用掩模板
CN204803392U (zh) * 2015-07-27 2015-11-25 昆山国显光电有限公司 精密掩膜板
CN106086781B (zh) * 2016-06-15 2018-09-11 京东方科技集团股份有限公司 掩膜组件及其制造方法、显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102201550A (zh) * 2010-03-17 2011-09-28 三星移动显示器株式会社 单元掩模、掩模组件和制造显示设备的方法
CN103014618A (zh) * 2012-12-25 2013-04-03 唐军 蒸镀用掩模板及其制造方法
CN104846328A (zh) * 2014-02-14 2015-08-19 三星显示有限公司 掩模框架组件及其制造方法
CN205576262U (zh) * 2016-05-09 2016-09-14 鄂尔多斯市源盛光电有限责任公司 一种掩膜板
CN107460436A (zh) * 2017-07-25 2017-12-12 武汉华星光电半导体显示技术有限公司 金属网板及蒸镀掩膜装置
CN107815641A (zh) * 2017-10-25 2018-03-20 信利（惠州）智能显示有限公司 掩膜板

Also Published As

Publication number Publication date
CN107815641A (zh) 2018-03-20
CN107815641B (zh) 2020-05-19
US20200340093A1 (en) 2020-10-29

Similar Documents

Publication Publication Date Title
WO2019080871A1 (fr) Dispositif de masque et ensemble de masque de celui-ci, et plaque de masque
TWI690107B (zh) 掩膜板及掩膜元件
WO2019080875A1 (fr) Masque
US10079272B2 (en) Substrate assembly and manufacturing method thereof and display device
US20150376765A1 (en) Mask, method for manufacturing the same and process device
US20150101536A1 (en) Mask assembly and deposition apparatus using the same for flat panel display
WO2017215286A1 (fr) Plaque de masque et procédé d'assemblage pour plaque de masque
US20210363626A1 (en) Display panel and mask plate for fabricating the same
US20180080114A1 (en) Evaporation mask, method of patterning substrate using the same, and display substrate
US20160322572A1 (en) Mask
CN110055493B (zh) 蒸镀用的精密金属掩膜版及其组件
KR102269310B1 (ko) 마스크 스트립 및 그것의 제조 방법 및 마스크 플레이트
WO2017117999A1 (fr) Plaque de masque métallique et procédé de fabrication s'y rapportant
TWI706189B (zh) 掩模板及顯示面板的製造方法
TWI659117B (zh) 精密金屬遮罩、顯示基板及其對位方法
US20190032192A1 (en) Metallic stencil and evaporation mask device
US20150287922A1 (en) Evaporation method and evaporation device
WO2017193646A1 (fr) Plaque de masque
WO2021073191A1 (fr) Masque
CN106367716B (zh) 掩模板及显示面板的制作方法
WO2019218605A1 (fr) Plaque de masque
WO2016150289A1 (fr) Plaque de masque
WO2021046807A1 (fr) Dispositif de masque et son procédé de fabrication, procédé d'évaporation, et dispositif d'affichage
US9905762B2 (en) Display substrate and fabricating method thereof, and system for fabricating display substrate and display device
CN107742637A (zh) 一种像素结构、掩膜版、显示面板及显示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18871499

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18871499

Country of ref document: EP

Kind code of ref document: A1