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WO2016150289A1 - Plaque de masque - Google Patents

Plaque de masque Download PDF

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Publication number
WO2016150289A1
WO2016150289A1 PCT/CN2016/075474 CN2016075474W WO2016150289A1 WO 2016150289 A1 WO2016150289 A1 WO 2016150289A1 CN 2016075474 W CN2016075474 W CN 2016075474W WO 2016150289 A1 WO2016150289 A1 WO 2016150289A1
Authority
WO
WIPO (PCT)
Prior art keywords
vapor deposition
unit
mask
shape
notch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/075474
Other languages
English (en)
Chinese (zh)
Inventor
张健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Ordos Yuansheng Optoelectronics Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US15/321,522 priority Critical patent/US20170204506A1/en
Publication of WO2016150289A1 publication Critical patent/WO2016150289A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to the field of electroluminescent display technology, and more particularly to a mask suitable for preparing an active organic electroluminescent device.
  • the flat panel display includes a liquid crystal display (LCD), an organic light emitting diode (OLED) display, a plasma display panel (PDP) display, an electronic ink display, and the like.
  • the OLED display has the advantages of being thin and light, low power consumption, high contrast, high color gamut, and flexible display, and is a development trend of the next generation display.
  • OLED display includes Passive Matrix/Organic Light Emitting Diode (PMOLED) display and Active Organic Light/Organic Light Emitting Diode (AMOLED) display; Low Temperature Poly-silicon (LTPS) backplane + Fine Metal Mask (FMM) mode, and semiconductor oxide backplane + white organic light emitting diode (WOLED) + color film the way.
  • PMOLED Passive Matrix/Organic Light Emitting Diode
  • AMOLED Active Organic Light/Organic Light Emitting Diode
  • LTPS Low Temperature Poly-silicon
  • FMM Fine Metal Mask
  • the former is mainly applied to small-sized panels, which correspond to mobile phones and mobile applications; the latter is mainly applied to large-sized panels, corresponding to applications such as displays and televisions.
  • the LTPS backplane + FMM approach has matured and achieved mass production.
  • the fine metal mask mode is to vapor-deposit the OLED material onto the LTPS backplane according to a predetermined procedure, and the red-green-blue device is formed by using the pattern on the FMM.
  • the mask used for the AMOLED is generally a single-structured Slit type mask or a Dot type mask; the metal mask includes a plurality of evaporation units.
  • the vapor deposition unit includes a plurality of vapor deposition notches that are regularly arranged; the vapor deposition notch of the linear mask has a linear shape, and the vapor deposition notch of the aperture mask has a hole shape.
  • each evaporation unit on a single mask has different degrees of deformation, and the edge of each evaporation unit is easily mixed after evaporation, which affects vapor deposition. quality.
  • the embodiment of the invention provides a mask suitable for preparing an active organic electroluminescent device, which is used for solving the color mixing problem caused by the deformation of the mask in the prior art and improving the evaporation quality.
  • Embodiments of the present invention provide a mask suitable for preparing an active organic electroluminescent device, comprising a plurality of vapor deposition units arranged in the same direction, each of which is provided with a plurality of vapor deposition gaps arranged in a regular arrangement
  • the shape of the vapor deposition notch of at least one of the vapor deposition units is different from the shape of the vapor deposition notch of the other vapor deposition unit.
  • the shape of the vapor deposition notch of at least one of the vapor deposition units in the mask is different from the shape of the vapor deposition notch of the other vapor deposition unit, and the flexible combination of the vapor deposition units having different shapes of the vapor deposition notches
  • the two different evaporation units mutually relieve the stress, effectively slowing down the deformation of the mask caused by the single evaporation unit, thereby solving the color mixing caused by the deformation of the mask in the prior art, and improving the evaporation quality.
  • two vapor deposition units that are symmetrical with each other with a line passing through a center position of the mask and perpendicular to a direction in which the plurality of vapor deposition units are arranged are symmetrical axes
  • the shape of the vapor-deposited notch is the same.
  • the shape variables at the symmetrical positions on the mask plate are also the same, and the correction amount required for correcting these vapor deposition units is also the same, which is advantageous for shortening the correction. The time required to shorten the process cycle.
  • the plurality of vapor deposition units are the same size.
  • the size of the evaporation unit located on the same mask is the same, two customers of the same size and different structure type display requirements can be satisfied at the same time, and the product quality can be guaranteed and improved.
  • the vapor deposition notch of the vapor deposition unit has a shape of a hole or a line.
  • shape of the vapor deposition notch is a hole shape, high pixel density can be achieved through the arrangement of the holes and the back circuit control; when the shape of the vapor deposition notch is linear, since the metal portion of the mask plate is small, the space between the wires is smaller. Large, high aperture ratio.
  • the mask comprises five evaporation units.
  • it is generally cut in the form of n (row) ⁇ 5 (column); in the evaporation process, the glass substrate is also arranged in the form of n (row) ⁇ 5 (column), so When the template includes 5 evaporation units, it meets the requirements of most evaporation processes.
  • the shape of the vapor deposition notch of the first vapor deposition unit, the third vapor deposition unit, and the fifth vapor deposition unit is linear, and the shape of the vapor deposition notch of the second vapor deposition unit and the fourth vapor deposition unit is a hole shape.
  • the direction in which the vapor deposition notches are arranged is perpendicular to the arrangement direction of the plurality of vapor deposition units.
  • the pull is performed.
  • the vapor deposition notch of the first vapor deposition unit, the third vapor deposition unit, and the fifth vapor deposition unit is linear
  • the shape of the vapor deposition notch of the second vapor deposition unit and the fourth vapor deposition unit is a hole shape
  • the shape of the vapor deposition notch of the first vapor deposition unit and the fifth vapor deposition unit is linear, and the shape of the vapor deposition notch of the second vapor deposition unit, the third vapor deposition unit, and the fourth vapor deposition unit is a hole shape.
  • the arrangement direction of the vapor deposition notches is perpendicular to the arrangement direction of the plurality of vapor deposition units.
  • a mask plate having a hole-shaped vapor deposition unit and a linear vapor deposition unit are spaced apart from each other to control color mixing in a region where the gap portion of the strip-shaped vapor deposition unit is located in the intermediate portion, and a mask having a hole-shaped structure
  • the intermediate recession is not obvious, and the vapor deposition notch of the third vapor deposition unit located in the middle portion is set to a hole shape, which can further slow the deformation of the third vapor deposition unit and ensure the shape of the third vapor deposition unit. Good, further preventing the occurrence of color mixture in the area matching the third unit on the substrate.
  • the shape of the vapor deposition notch of the first vapor deposition unit and the fifth vapor deposition unit is a hole shape
  • the shape of the vapor deposition notch of the second vapor deposition unit, the third vapor deposition unit, and the fourth vapor deposition unit is linear.
  • the arrangement direction of the vapor deposition notches is perpendicular to an arrangement direction of the plurality of vapor deposition units.
  • the mask structure of the hole type structure has many metal parts and has the characteristics of weak expansion and small shrinkage
  • the mask plate having a large deformation at both end portions and a small deformation in the intermediate portion is steamed at both ends.
  • the plating unit is formed by a hole-shaped vapor deposition unit, which can effectively reduce the degree of relaxation at both ends and reduce the deformation of the mask.
  • the vapor deposition notch of the first vapor deposition unit, the third vapor deposition unit, and the fifth vapor deposition unit has a shape of a hole, and the shape of the vapor deposition notch of the second vapor deposition unit and the fourth vapor deposition unit is linear.
  • the arrangement direction of the vapor deposition notches is perpendicular to the arrangement direction of the plurality of vapor deposition units. Since the shape of the vapor deposition notch is linear, the vapor deposition unit has the characteristics of relaxation at both ends. For a single aperture type mask, the vapor deposition unit at both ends after stretching has a large shrinkage and a serious color mixture.
  • the shape of the vapor deposition notch of the second vapor deposition unit and the fourth vapor deposition unit is linear, and can be reduced The tendency of the both ends is reduced after the slow stretching, and the deformation of the mask is reduced.
  • the material of the mask is an Invar material. Because Invar material has the advantages of high temperature and high pressure resistance, small expansion coefficient and deformation, etc. compared with other materials, the mask plate prepared by Invar alloy material is used in the evaporation process; in addition, other high temperature and high pressure resistance can be adopted.
  • the mask is prepared from other metal materials having a small expansion coefficient and a stable shape.
  • FIG. 1 is a schematic plan view showing a planar structure of a line mask in the prior art
  • FIG. 2 is a schematic plan view showing a prior art aperture mask
  • FIG. 3 is a schematic plan view showing a mask of a mask according to Embodiment 1 of the present invention.
  • FIG. 4 is a schematic plan view showing the entire mask formed by a plurality of single masks
  • FIG. 5 is a schematic plan view showing a mask of a mask according to Embodiment 2 of the present invention.
  • Figure 7 is a diagram showing the effect of the mask provided after the second embodiment of the present invention is stretched.
  • FIG. 8 is a schematic plan view showing a mask of a mask provided in Embodiment 3 of the present invention.
  • FIG. 9 is a schematic plan view showing a mask of a mask provided in Embodiment 4 of the present invention.
  • FIG. 10 is a schematic plan view showing a planar structure of a mask provided in Embodiment 5 of the present invention.
  • Fig. 11 is a view showing the effect of stretching of a single hole type mask.
  • the embodiment of the invention provides a mask suitable for preparing an active organic electroluminescent device, which is used for solving the color mixing problem caused by the deformation of the mask in the prior art and improving the evaporation quality.
  • Embodiment 1 of the present invention provides a mask suitable for preparing an active organic electroluminescent device.
  • the mask includes a plurality of vapor deposition units C arranged in the same direction, and each vapor deposition unit is provided with a plurality of vapor deposition notches regularly arranged, at least one vapor deposition The shape of the vapor deposition notch of the unit is different from the shape of the vapor deposition notch of the other vapor deposition unit.
  • a line passing through a center of the mask and perpendicular to a direction in which the plurality of vapor deposition units are arranged is an axis of symmetry, and two vapor deposition units are symmetric with each other.
  • the shape of the vapor deposition notch is the same.
  • the plurality of vapor deposition units have the same size.
  • the size of the evaporation unit located on the same mask is the same, two customers of the same size and different structure type display requirements can be satisfied at the same time, and the product quality can be guaranteed and improved.
  • the shape of the vapor deposition notch of the vapor deposition unit is a hole shape or a line shape, that is, the vapor deposition unit is a hole type vapor deposition unit or a line type evaporation unit.
  • the shape of the vapor deposition notch is a hole shape, high pixel density can be achieved through the arrangement of the holes and the back circuit control; when the shape of the vapor deposition notch is linear, since the metal portion of the mask plate is small, the space between the wires is smaller. Large, high aperture ratio.
  • the mask includes five vapor deposition units.
  • it is generally cut in the form of n (row) ⁇ 5 (column); in the evaporation process, the glass substrate is also arranged in the form of n (row) ⁇ 5 (column), so when When the reticle includes five vapor deposition units, it meets the requirements of many evaporation processes.
  • the large glass is generally divided into four small glass, and then each small glass is cut into 50 5-inch screens in the form of 10 ⁇ 5 to make the utilization of the glass substrate. maximize. Therefore, referring to FIG.
  • 10 of the masks having a vapor deposition unit of 5 inches in size can be stretched and fixed on the peripheral frame; after the evaporation is completed, the glass substrate having the same size as that of the 10 masks can be Cut into 50 5-inch screens in a 10 x 5 format.
  • the material of the mask is an invar alloy material. Because the Invar alloy material has the advantages of high temperature and high pressure resistance, small expansion coefficient, stable shape and deformation resistance, etc., the mask plate prepared by Invar alloy material is used in the evaporation process; in addition, other materials may be used. A mask is prepared from other metal/alloy materials which are resistant to high temperature and high pressure, small in expansion coefficient, stable in morphology, and resistant to deformation.
  • a second embodiment of the present invention provides a mask, which is shown in FIG. 5; the mask includes five evaporation units, wherein the first evaporation unit C1, the third evaporation unit C3, and the fifth evaporation unit
  • the shape of the vapor deposition notch of the element C5 is linear, and the shape of the vapor deposition notch of the second vapor deposition unit C2 and the fourth vapor deposition unit C4 is a hole shape.
  • the arrangement direction of the vapor deposition notches is perpendicular to the plurality of vapor deposition units. Arrange the direction.
  • a single strip of varnish material having a length of 600 m to 1200 mm, a width of 50 to 100 mm, a thickness of 20 to 50 ⁇ m, and a single varnishing unit having a symmetrical structure are stretched by a force of 3 to 9 Kg on the left and right sides; As shown, the effect after stretching is shown in Fig. 6. After the stretching, the intermediate vapor deposition unit is deformed inward, and the longitudinal direction is reduced by 1 to 8 ⁇ m, and the shrinking tendency is gradually decreased to 1-2 ⁇ m toward both sides; and the lateral elongation is 2 to 10 ⁇ m. It can be seen that after the single-line type mask is stretched, the deformation tendency of each vapor deposition unit is different.
  • the amount of stretch is reserved, and it is difficult to grasp the size and regularity. For example, if a mask having a width of 50 mm after stretching is obtained, correction is required for each vapor deposition unit, and the correction amounts are different, and the correction amounts of different positions of the single vapor deposition unit are also different. A relatively satisfactory mask can only be obtained after a long period of contact with the mask manufacturer. After the correction of the mask, the dimensions are 49.999mm on both sides and 50.004mm in the middle. The intermediate transition area is corrected, which requires a lot of tensile tests to obtain a mask with a width of 50mm after stretching.
  • a single strip of varnish material having a length of 600 m to 1200 mm, a width of 50 to 100 mm, a thickness of 20 ⁇ m to 50 ⁇ m, and five vapor deposition units having a symmetrical structure are stretched by a force of 3 to 9 kg per side;
  • the pre-effect is shown in Figure 5, and the effect after stretching is shown in Figure 7.
  • After stretching there is deformation of the same magnitude, and the longitudinal direction is reduced by 1 to 2 ⁇ m, and the five vapor deposition units have the same shrinkage tendency and the lateral elongation is 2 to 4 ⁇ m. It can be seen that after the mask of the structure is stretched, each of the vapor deposition units has the same tendency of deformation.
  • the amount of stretch can be reserved. For example, if a mask having a width of 50 mm after stretching is desired, a mask having an overall width of 49.998 mm is purchased, and the desired stretched size can be obtained after stretching.
  • each vapor deposition unit on the mask after stretching has the same tendency to deform. After determining the required width of the stretched mask, it is only necessary to purchase a suitable mask. After one or two experiments, the mask can be corrected, which effectively improves the masking efficiency and shortens the mask. The correction cycle has increased production capacity.
  • the problem of pixel density caused by the color mixing problem is also solved.
  • the mask includes both a vapor-type vapor deposition unit and a strip-shaped vapor deposition unit, the mask can meet the requirements of the customer of the aperture mask and meet the needs of the linear mask customer. And the quality of evaporation can be guaranteed and improved.
  • a third embodiment of the present invention provides a mask, which is shown in FIG. 8; the mask includes five vapor deposition units, wherein the vapor deposition notches of the first vapor deposition unit C1 and the fifth vapor deposition unit C5 have a linear shape.
  • the shape of the vapor deposition notch of the second vapor deposition unit C2, the third vapor deposition unit C3, and the fourth vapor deposition unit C4 is a hole shape.
  • the arrangement direction of the vapor deposition notches is perpendicular to the arrangement direction of the plurality of vapor deposition units.
  • the vapor deposition notch of the third vapor deposition unit C3 located in the middle portion is set to a hole shape, which can further slow down the deformation of the third vapor deposition unit C3, and ensure the third vapor deposition unit.
  • the shape of C3 is good, and the occurrence of color mixture in the area matching the third unit C3 on the substrate is prevented.
  • a fourth embodiment of the present invention provides a mask, which is shown in FIG. 9; the mask includes five vapor deposition units, wherein the vapor deposition notch of the first vapor deposition unit C1 and the fifth vapor deposition unit C5 has a hole shape.
  • the shape of the vapor deposition notch of the second vapor deposition unit C2, the third vapor deposition unit C3, and the fourth vapor deposition unit C4 is linear.
  • the arrangement direction of the vapor deposition notches is perpendicular to the plurality of vapor deposition units. Arrange the direction.
  • the mask structure of the hole type structure has many metal parts and has the characteristics of weak expansion and small shrinkage
  • the mask plate having a large deformation at both end portions and a small deformation in the intermediate portion is steamed at both ends.
  • the plating unit is formed by a hole-shaped vapor deposition unit, which can effectively reduce the degree of relaxation at both ends and reduce the deformation of the mask.
  • a fifth embodiment of the present invention provides a mask, which is shown in FIG. 10; the mask includes five vapor deposition units, wherein the first vapor deposition unit C1, the third vapor deposition unit C3, and the fifth vapor deposition unit C5 are steamed.
  • the shape of the plating notch is a hole shape, and the shape of the vapor deposition notch of the second vapor deposition unit C2 and the fourth vapor deposition unit C4 is linear.
  • the arrangement direction of the vapor deposition notches is perpendicular to the arrangement direction of the plurality of vapor deposition units.
  • the mask structure of the hole type structure has many metal parts and has the characteristics of weak expandability and small shrinkage, the single hole type mask is still susceptible to deformation.
  • the vapor deposition units on both sides are deformed inward, and the longitudinal direction is reduced by 1 to 6 ⁇ m, and the shrinking tendency is gradually decreased to the middle by 1 to 2 ⁇ m; and the lateral elongation is 2 to 8 ⁇ m. It can be seen that after the single-hole mask is stretched, the deformation trend of each vapor deposition unit is different, and the deformation of the first vapor deposition unit and the fifth evaporation unit is large, and the matching area on the substrate after vapor deposition is prone to serious occurrence. Color mixing; and, when purchasing the mask, the amount of stretch is reserved, and it is difficult to grasp the size and regularity. It is necessary to communicate with the manufacturer and test the correction several times in order to obtain the mask required to meet the process, resulting in a process. The cycle is extended.
  • the shape of the vapor deposition notch of the second vapor deposition unit and the fourth vapor deposition unit is strip-shaped, and the vapor deposition unit having a linear shape of the vapor deposition notch has a relaxation at both ends.
  • the invention reduces the shrinking tendency of the first vapor deposition unit and the fifth vapor deposition unit after stretching, reduces the deformation of the mask, and solves the color mixing problem caused by the deformation.
  • the embodiment of the present invention provides a mask suitable for preparing an active organic electroluminescent device, wherein the shape of the vapor deposition notch of at least one vapor deposition unit and the evaporation of other vapor deposition units are included in the mask.
  • the shape of the notch is different.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne une plaque de masque comprenant une pluralité d'unités d'évaporation (C1, C2, C3, C4, C5) disposées dans la même direction, chaque unité d'évaporation (C1, C2, C3, C4, C5) étant pourvue d'une pluralité d'encoches d'évaporation disposées régulièrement, caractérisée en ce que la forme des encoches d'évaporation d'au moins une unité d'évaporation (C1, C2, C3, C4, C5) est différente des formes des encoches d'évaporation des autres unités d'évaporation (C1, C2, C3, C4, C5).
PCT/CN2016/075474 2015-03-20 2016-03-03 Plaque de masque Ceased WO2016150289A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/321,522 US20170204506A1 (en) 2015-03-20 2016-03-03 Mask plate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510125791.5 2015-03-20
CN201510125791.5A CN104762590B (zh) 2015-03-20 2015-03-20 蒸镀掩膜板

Publications (1)

Publication Number Publication Date
WO2016150289A1 true WO2016150289A1 (fr) 2016-09-29

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PCT/CN2016/075474 Ceased WO2016150289A1 (fr) 2015-03-20 2016-03-03 Plaque de masque

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US (1) US20170204506A1 (fr)
CN (1) CN104762590B (fr)
WO (1) WO2016150289A1 (fr)

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CN111158211B (zh) * 2020-01-02 2023-10-27 京东方科技集团股份有限公司 掩膜板的制备方法、显示基板的制备方法
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