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WO2017108300A1 - Procédé de fabrication d'un capteur de flux à base d'un film mince ainsi que capteur de flux de ce genre - Google Patents

Procédé de fabrication d'un capteur de flux à base d'un film mince ainsi que capteur de flux de ce genre Download PDF

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Publication number
WO2017108300A1
WO2017108300A1 PCT/EP2016/078393 EP2016078393W WO2017108300A1 WO 2017108300 A1 WO2017108300 A1 WO 2017108300A1 EP 2016078393 W EP2016078393 W EP 2016078393W WO 2017108300 A1 WO2017108300 A1 WO 2017108300A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoresist
heater
temperature measuring
flow sensor
measuring elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2016/078393
Other languages
German (de)
English (en)
Inventor
David Gross
Fabian Utermoehlen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to EP16798745.2A priority Critical patent/EP3394574A1/fr
Priority to CN201680075414.8A priority patent/CN108431555A/zh
Publication of WO2017108300A1 publication Critical patent/WO2017108300A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/688—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element
    • G01F1/69—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element of resistive type
    • G01F1/692—Thin-film arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6845—Micromachined devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for

Definitions

  • the invention relates to a method for producing a thin-film based flow sensor, comprising a first heater and temperature measuring element and at least one second heater and temperature measuring element, wherein the heater and temperature measuring elements are spatially separated from each other, and wherein a support structure is provided, which for receiving the Heater and
  • Temperature measuring elements is formed.
  • the invention is further directed to such a flow sensor formed on a thin film base.
  • Flow sensors or so-called mass flow sensors which operate on the principle of the hot wire anemometer are known.
  • a hot wire is kept at a constant temperature according to a closed-loop method.
  • the stronger the surrounding mass flow e.g., airflow), the more power must be provided to keep the temperature of the hot wire constant.
  • the latter is a measure of the air flow or the
  • a semiconductor sensor constructed flow sensor is known for example from DE 40 05 801 C2. The flow sensor has a first one
  • Resistance element and a second resistance element which are connected in a Wheatstone bridge, wherein the resistance elements are spatially separated from each other and each a thin-film heating element is necessary to heat the resistance elements.
  • the resistive elements as well as the thin-film heating elements are accommodated in a protective film.
  • a semiconductor substrate has been opened by an etching process on which the resistive elements and the thin-film heating elements have been constructed by a thin-film technique.
  • a larger etching volume is necessary, and furthermore, the separate structure of resistance elements and of the thin-film heating elements results in a complex construction. In this case, it is proposed in particular to indemnify a plurality of relatively existing bridge elements, whereby a considerable
  • the openings created in the semiconductor substrate can be described as macroscopic, which may include depths of, for example, several micrometers, resulting in an additional considerable expenditure of time in the production.
  • the object of the invention is to provide an improved
  • Thin-film based flow sensor that is easy to manufacture and versatile.
  • the flow sensor should
  • Thin film base can be produced with few process steps, and should be used in standard installation situations application.
  • the method according to the invention has at least the following steps: providing a substrate; Depositing a first photoresist on the substrate; Depositing a second photoresist on the first photoresist; Opening the first and second photoresist to form a terminal metallization; Depositing a metal to form the heater and temperature sensing elements; Patterning the deposited metal; Depositing a third photoresist and removing the first photoresist by at least one sacrificial layer etch.
  • the core of the invention is a method for producing a flow sensor, which method is based on the application of a number of photoresists on a substrate.
  • the thin film base is formed by a plurality of photoresists, which are simple and flexible to produce and structure.
  • the photoresists form a carrier layer for receiving the heater and
  • CMOS wafer Characteristics of a CMOS wafer changed, since low process temperatures are needed for the production of the sensor. Moreover, the flow sensor produced according to the invention is also suitable for operation with current and voltage measurements based on standard components.
  • the structuring of the deposited metal can be effected by means of a mask or by means of etching, for example by means of the use of an etching stop layer which has been previously optically and / or thermally modified.
  • CMOS ASIC wafer a glass wafer or a polymer film is used as the substrate, so that for later use of the
  • a photoresist is deposited as a second photoresist which is chemically resistant to the sacrificial layer etching of the first photoresist. Furthermore, a photoresist is deposited as a third photoresist, the chemically also resistant to sacrificial layer etching of the first photoresist. The application of the individual photoresists is carried out with suitable
  • the support structure is constructed, for example, from SU-8, because this paint after the post-exposure beacon is insensitive to most etching methods and solvents and accordingly freestanding structures with the sacrificial layer etching of sacrificial layers, consisting of less
  • solvent-resistant photoresists are possible. Furthermore, in SU-8 photoresists, structures with high edge steepness can be produced, making these coatings particularly suitable for the construction of suspension structures.
  • the invention is further directed to a flow sensor
  • a thin film base comprising a first heater and temperature sensing element and at least one second heater and temperature sensing element, and wherein the heater and temperature sensing elements are spatially separated, and wherein there is a support structure configured to receive the heater and temperature sensing elements.
  • the support structure has a free space between the temperature measuring elements, which is produced by a sacrificial layer etching of the first photoresist.
  • the free space extends in particular between the support structure and the surface of the substrate, so that the support structure receives the heater and temperature measuring elements freely suspended above the substrate.
  • the support structure has connecting arms for contacting the heater and temperature measuring elements.
  • the connecting arms in this case comprise electrical connections for the heater and temperature measuring elements, which are enclosed up to the surface of the substrate with at least one photoresist.
  • the support structure has a structuring between the two heater and temperature measurement elements.
  • Temperature measuring elements can be enclosed in the photoresists and have a meandering structure, so that the largest possible
  • FIG. 1 is a plan view of a thin film based flow sensor made by the method of the present invention
  • Figure 2 is a cross-sectional view of the flow sensor along the
  • FIG. 3 shows a further plan view of the flow sensor
  • Figure 4 is a cross-sectional view of the flow sensor along the
  • Figure 5 shows an arrangement of two flow sensors, with a
  • Air flow have flowed from a horizontal flow direction
  • Figure 6 shows an arrangement of two flow sensors, with a
  • Air flow have flowed from a vertical flow direction.
  • Figure 1 shows an example of a possible embodiment of a
  • the flow sensor 1 which is constructed on a substrate, not shown.
  • the flow sensor 1 has a carrier structure 21, which is constructed from a plurality of layers of photoresists.
  • a carrier structure 21 which is constructed from a plurality of layers of photoresists.
  • the support structure 21 are two spatially separated from each other arranged heater and Temperature measuring elements 10 and 11 were added, which are connected via electrical connections 19 to the substrate.
  • the outgoing electrical connections 19 are received in connection arms 17, which are part of the support structure 21 and which surround the electrical connections 19.
  • the heater and temperature measuring elements 10 and 11 are constructed by deposited metals 14 and have a meandering structure in the middle.
  • FIG 2 shows a cross-sectional view of the flow sensor 1 along the section line A-A ', as shown in Figure 1.
  • the support structure 21 is composed of a second photoresist 13 and a third photoresist 15, and between the two photoresists 13 and 15 is shown in cross-section an applied metal 14, which forms the heater and temperature measuring elements 10, 11, as in the plan view in Figure 1 shown.
  • Below the photoresists 13 and 15 is a free space 16, which was created by a first photoresist 12, wherein the first photoresist 12 is a sacrificial layer, which was etched away to create the free space 16.
  • a floating arrangement of the support structure 21 arises, based on the remaining photoresists 13 and 15.
  • the free space extends between the second photoresist 13 as the lower support side of the support structure 21 and the substrate 100, for example comprising a CMOS circuit.
  • FIG. 3 shows a further plan view of a flow sensor 1, in which a section line B-B 'is shown, and the associated sectional view is shown in FIG. 4.
  • FIG. 4 shows the sectional view of the flow sensor 1 along the section line BB 'according to FIG. 3.
  • the substrate 100 is illustrated, on which the carrier structure 21 with the photoresists 13 and 15 is constructed.
  • the deposited metal 14 Between the two photoresists 13 and 15 is the deposited metal 14 to form the heater and temperature sensing elements 10, 11 as shown in Figure 3.
  • the deposited metal 14 has electrical terminals 19 to the substrate 100, and the electrical terminals 19 are enclosed in terminal arms 17 formed by the second photoresist 13 and the third photoresist 15.
  • the deposited metal 14 forms the heater and temperature sensing elements 10, 11 and has a linear relationship between the resistance value and the temperature. With constant energization can so over the
  • measured voltage are at least indirectly converted into an operating temperature of the resistor.
  • the measuring principle is based on the fact that the lying in the flow direction heater and
  • Temperature sensing element is cooled more than the subsequent heater and temperature measuring element behind the first heater and
  • Temperature measuring element located with the flow direction.
  • Figure 5 shows, for example, two flow sensors 1 with a 90 ° to each other rotated arrangement.
  • the first flow sensor 1 has an orientation, so that the first heater and temperature measuring element 10 first from the
  • Flow 20 is flowing, and only then the second heater and temperature measuring element 11 is flown. This results in a temperature Tl of the first heater and temperature measuring element 10, which is smaller than the temperature T2 of the second heater and temperature measuring element 11. This results in a voltage difference, for example via a Wheatstone ash Bridge can be measured, and over on one
  • Flow rate of the flow 20 can be closed.
  • the further flow sensor 1 is arranged rotated by 90 °, so that both heater and temperature measuring elements 10, 11 are equally flowed by the flow 20.
  • the temperature T3 of the first heater and temperature measuring element 10 is equal to the temperature T4 of the second heater and temperature measuring element 11. From the two voltages, the vector components of the flow can be determined and the amount calculated by vector addition.
  • Figure 6 shows the arrangement of the flow sensors 1 with a
  • Temperature measuring elements 10 and 11 of the flow sensors 1 in Figures 5 and 6 illustrates that can already be closed by the respective voltages resulting from the temperatures on the flow direction of the flow 20.
  • the invention is not limited in its execution to the above-mentioned preferred embodiment. Rather, a number of variants is conceivable, which makes use of the illustrated solution even with fundamentally different types of use. All from the

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  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Volume Flow (AREA)

Abstract

La présente invention concerne un procédé de fabrication d'un capteur de flux (1) à base d'un film mince, comprenant un premier élément de chauffage et de mesure de température (10) et au moins un second élément de chauffage et de mesure de température (11), les éléments de chauffage et de mesure de température (10, 11) étant séparés spatialement l'un de l'autre, une structure porteuse (21) étant formée pour recevoir les éléments de chauffage et de mesure de température (10, 11). Selon l'invention, le procédé de fabrication comprend au moins les étapes suivantes : préparation d'un substrat (100) ; dépôt d'une première résine photosensible (12) sur le substrat (100) ; dépôt d'une deuxième résine photosensible (13) sur la première résine photosensible (12) ; ouverture des première (12) et deuxième (13) résines photosensibles pour la réalisation d'une métallisation de raccordement ; dépôt d'un métal (14) pour la formation des éléments de chauffage et de mesure de température (10, 11) ; structuration du métal déposé (14) ; dépôt d'une troisième résine photosensible (15) et suppression de la première résine photosensible (12) par au moins une gravure chimique de couche sacrifiée. La présente invention concerne en outre un capteur de flux (1), fabriqué avec un procédé de ce genre.
PCT/EP2016/078393 2015-12-21 2016-11-22 Procédé de fabrication d'un capteur de flux à base d'un film mince ainsi que capteur de flux de ce genre Ceased WO2017108300A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP16798745.2A EP3394574A1 (fr) 2015-12-21 2016-11-22 Procédé de fabrication d'un capteur de flux à base d'un film mince ainsi que capteur de flux de ce genre
CN201680075414.8A CN108431555A (zh) 2015-12-21 2016-11-22 用于制造在薄膜基底上的流量传感器的方法以及这种流量传感器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015226197.2 2015-12-21
DE102015226197.2A DE102015226197A1 (de) 2015-12-21 2015-12-21 Verfahren zur Herstellung eines Strömungssensors auf Dünnfilmbasis sowie ein solcher Strömungssensor

Publications (1)

Publication Number Publication Date
WO2017108300A1 true WO2017108300A1 (fr) 2017-06-29

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Application Number Title Priority Date Filing Date
PCT/EP2016/078393 Ceased WO2017108300A1 (fr) 2015-12-21 2016-11-22 Procédé de fabrication d'un capteur de flux à base d'un film mince ainsi que capteur de flux de ce genre

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Country Link
EP (1) EP3394574A1 (fr)
CN (1) CN108431555A (fr)
DE (1) DE102015226197A1 (fr)
WO (1) WO2017108300A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109141559B (zh) * 2018-08-29 2021-05-04 杭州电子科技大学 一种大量程双模热感桥式微流量计
JP2021148603A (ja) * 2020-03-19 2021-09-27 ローム株式会社 熱式フローセンサ
CN113175963B (zh) * 2021-04-27 2022-10-28 华东师范大学 一种mems流量传感器及制备方法
CN115435855B (zh) * 2022-08-25 2024-11-01 上海声动微科技有限公司 流量传感器及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4005801A1 (de) 1990-02-22 1991-08-29 Yamatake Honeywell Co Ltd Mikrobruecken-stroemungssensor
JPH10160538A (ja) * 1996-12-02 1998-06-19 Murata Mfg Co Ltd 熱センサおよびその製造方法
EP0856825A1 (fr) * 1997-01-31 1998-08-05 STMicroelectronics S.r.l. Méthode pour la fabrication des dispositifs semi-conducteurs avec des microcapteurs de gaz
US6586841B1 (en) * 2000-02-23 2003-07-01 Onix Microsystems, Inc. Mechanical landing pad formed on the underside of a MEMS device
US6825057B1 (en) * 1997-11-25 2004-11-30 Robert Bosch Gmbh Thermal membrane sensor and method for the production thereof
US20050062121A1 (en) * 2003-09-24 2005-03-24 Inao Toyoda Sensor device having thin membrane and method of manufacturing the same
US20120231212A1 (en) * 2009-07-23 2012-09-13 Leib Juergen Method for producing a structured coating on a substrate, coated substrate, and semi-finished product having a coated substrate

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070209433A1 (en) * 2006-03-10 2007-09-13 Honeywell International Inc. Thermal mass gas flow sensor and method of forming same
JP5580415B2 (ja) * 2009-07-22 2014-08-27 コーニンクレッカ フィリップス エヌ ヴェ 短レスポンス時間及び高感度を持つ熱流センサ集積回路

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4005801A1 (de) 1990-02-22 1991-08-29 Yamatake Honeywell Co Ltd Mikrobruecken-stroemungssensor
JPH10160538A (ja) * 1996-12-02 1998-06-19 Murata Mfg Co Ltd 熱センサおよびその製造方法
EP0856825A1 (fr) * 1997-01-31 1998-08-05 STMicroelectronics S.r.l. Méthode pour la fabrication des dispositifs semi-conducteurs avec des microcapteurs de gaz
US6825057B1 (en) * 1997-11-25 2004-11-30 Robert Bosch Gmbh Thermal membrane sensor and method for the production thereof
US6586841B1 (en) * 2000-02-23 2003-07-01 Onix Microsystems, Inc. Mechanical landing pad formed on the underside of a MEMS device
US20050062121A1 (en) * 2003-09-24 2005-03-24 Inao Toyoda Sensor device having thin membrane and method of manufacturing the same
US20120231212A1 (en) * 2009-07-23 2012-09-13 Leib Juergen Method for producing a structured coating on a substrate, coated substrate, and semi-finished product having a coated substrate

Also Published As

Publication number Publication date
DE102015226197A1 (de) 2017-06-22
CN108431555A (zh) 2018-08-21
EP3394574A1 (fr) 2018-10-31

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