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WO2001065222A1 - Corps structure, en particulier capteur a infrarouge, et procede de realisation d'une microstructure constituee d'un materiau fonctionnel - Google Patents

Corps structure, en particulier capteur a infrarouge, et procede de realisation d'une microstructure constituee d'un materiau fonctionnel Download PDF

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Publication number
WO2001065222A1
WO2001065222A1 PCT/DE2001/000539 DE0100539W WO0165222A1 WO 2001065222 A1 WO2001065222 A1 WO 2001065222A1 DE 0100539 W DE0100539 W DE 0100539W WO 0165222 A1 WO0165222 A1 WO 0165222A1
Authority
WO
WIPO (PCT)
Prior art keywords
functional material
recess
structural body
structuring layer
filled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2001/000539
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German (de)
English (en)
Inventor
Volker Becker
Thorsten Pannek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of WO2001065222A1 publication Critical patent/WO2001065222A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples

Definitions

  • Structural body in particular infrared sensor, and method for producing a micro structure from a functional material
  • the invention relates to a structural body, in particular an infrared sensor, and a method for producing a microstructure from a functional material, according to the preamble of the independent claims.
  • thermoelectrically or thermoresistively Radiation in heat, which is then measured thermoelectrically or thermoresistively using thermocouples or bolometers.
  • thermocouples or bolometers A prerequisite for the highest possible sensitivity of such a sensor is the most efficient conversion of infrared radiation into heat, which is often achieved by means of a suitable absorber material.
  • thermocouples of the IR sensors are always applied in the area of the so-called “hot” contacts of the thermocouples of the IR sensors, so that the absorber materials are at least indirectly thermally conductive to these “hot” contacts or areas of the thermocouples.
  • microdosing technology for example using a piston or screw dispenser
  • a piston or screw dispenser to apply the smallest amounts of lacquer to substrates using a metering needle.
  • the geometry of the structures produced by dispensing is severely limited due to the lack of photolithographic structuring.
  • the application of lacquers using microdosing technology has so far only been possible in the form of dots or lines on the surface of a corresponding substrate. In many cases, however, the circular shape of punctiform structures is not desirable.
  • the object of the present invention was to develop a method with which microstructures of a functional material with lateral structural geometries that go beyond lines and circles can be realized.
  • the structural body according to the invention and the method according to the invention for producing a microstructure from a functional material has the advantage over the prior art that it is possible to produce recesses or cavern structures in the area of the surface of a structuring layer in almost any geometry.
  • the method according to the invention and the functional material used have the advantage that the Processing of the functional material or standard processes can be used in the course of the method according to the invention, and the structuring of lacquers or functional materials that cannot be processed photolithographically is also possible.
  • the structural body according to the invention and the method according to the invention have the advantage that a significantly increased resolution, in particular location resolution, is thereby achieved in the manufacture of infrared sensors. This results from the now almost arbitrary shape of the recess filled with the functional material, for which an angular shape is often particularly advantageous for heat distribution reasons.
  • the lateral delimitation of the recesses produced also prevents excessive flow of the filled functional material.
  • the lateral boundaries also prevent the overflow filled functional material during possibly subsequent process steps with critical temperatures.
  • the filling is advantageously checked or carried out with the aid of image processing.
  • FIG. 1 shows a structural body in the form of an infrared sensor
  • FIG. 2 shows a cross section through FIG. 1 before the functional material is filled in
  • FIG. 3 shows the method step following FIG. 2 when filling the functional material
  • FIG. 4 shows a section through FIG Filling the functional material and its flowing.
  • FIG. 1 shows an infrared sensor 5 as an example of a structural body, the functioning and basic structure of which is already known from the application DE 199 32 308.9.
  • FIG. 1 shows a supporting body 12 made of a material which is preferably a good heat conductor, such as silicon, which has a cavern 20 on the back and which has a structured tion layer 11 in the form of an at least partially self-supporting membrane.
  • the thickness of the structuring layer 11 is typically in the range from 300 nm to 100 ⁇ m, in particular 1 ⁇ m to 20 ⁇ m. It preferably consists of a material which is poorly thermally conductive with respect to the material of the support body 12, such as an oxide or nitride, in particular silicon oxide or silicon nitride, or of porous silicon.
  • a suitable material for the supporting body 12 is also a silicon compound or a metal such as copper, aluminum, gold, silver, cobalt or nickel.
  • thermocouples On the surface of the structuring layer 11, in a manner known per se, a large number of thermocouples arranged in a cross or star arrangement are provided as microcomponents 17. These thermocouples each consist of a first thermal material 15 and a second thermal material 16 in the form of thin conductor tracks applied to the surface of the structuring layer 11. These conductor tracks are alternately constructed from the first thermal material 15 and the second thermal material 16, so that a thermal contact is formed in the area of the transition from the first thermal material 15 to the second thermal material 16.
  • thermocouple junctions of the thermocouples are alternately at least indirectly thermally conductive stand and with the Tragkorper 12 in combination the other hand abwech ⁇ nately to the center of a star or cross-shaped arrangement, the thermocouples are oriented toward, that is located in the cantilevered portion of the patterning layer 11 be ⁇ find, so that this thermal contacts as possible away from the Tragkorper 12 are removed and thus the lowest possible heat conduction or heat dissipation up passes over the Tragkorper 12th
  • the arrangement of the microcomponents 17 in the form of thermocouples which is known per se and thus explained in FIG.
  • the material pairs platinum / polysilicon, aluminum / poly-silicon or p- are suitable as first thermo material 15 and second thermo material 16. doped poly-silicon / n-doped poly-silicon.
  • FIG. 1 further shows that the structuring layer 11 has at least one recess 19 in the form of a cavern structure in some areas, which is at least largely filled with a functional material 10 and thus forms a microstructure 18.
  • the recess 19 or the microstructure 18 is arranged on the one hand in the immediate vicinity of the “hot” thermal contacts, but on the other hand in such a way that the recess 19 or the microstructure 18 does not cover the thermocouples or microcomponents 17, ie the recess 19 is located in the free area delimited by the thermocouples in the center of the structuring layer 11 according to FIG. 1.
  • the microcomponents 17 in a known manner as thermocouples buried within the structuring layer 11. elements.
  • the recess 19 can also be placed above the “hot” thermal contacts of the thermocouples, the recess 19 then preferably reaching as close as possible in depth to the buried “hot” thermal contacts, but preferably extending the recess 19 out of the structure the structuring layer 11 is not completely exposed.
  • the recess 19 is preferably placed in such a way and dimensioned with respect to its lateral extent and depth that the functional material 10 filled into the recess 19 is at least indirectly thermally conductive with the thermocouples arranged as microcomponents 17 on the surface of the structuring layer 11.
  • the functional material 10 filled into the recess 19 is at least indirectly thermally conductive with the thermocouples arranged as microcomponents 17 on the surface of the structuring layer 11.
  • Functional material 10 is only thermally conductive in connection with the "hot” thermal contacts of the thermocouples, due to the heat-absorbing properties of the functional material 10, and the resulting strengthening of the temperature gradient across the individual thermocouples, an increase in the sensitivity and measuring accuracy of the thermocouples and thus the entire infrared sensor 5 is reached.
  • the functional material 10 filled into the recess 19 is, for example, a dispensable lacquer in the form of an infrared absorber material, which is optionally provided with a filler. Suitable functional materials 10 of this type are described in the application DE 199 52 126.3.
  • the recess 19 is preferably a cavern structure structured on the surface out of the structuring layer 11 and having a rectangular, square, round or cruciform surface shape in plan view. It has a typical depth of 10 nm to 10 ⁇ m, in particular 200 nm to 2 ⁇ m, ne typical length from 1 ⁇ m to 1000 ⁇ m, in particular from 100 ⁇ m to 600 ⁇ m, and a width from 1 ⁇ m to 1000 ⁇ m, in particular from 100 ⁇ m to 600 ⁇ m.
  • the explained structure of the infrared sensor 5 according to FIG. 1 has the effect that the supporting body 12 forms a heat sink, while the functional material 10 is a material that absorbs warm and / or electromagnetic radiation, so that a particularly strong heat absorption occurs at this point.
  • FIG. 2 shows the first method step for producing the recess 19 in the region of the structuring layer 11 in a simplified manner.
  • a suitable etching mask For this purpose, using a suitable etching mask, a known cavern etching of the material of the structuring layer 11 is carried out, starting from the surface of the structuring layer 11. This cavern etching takes place, for example, using a known dry or wet chemical etching process, the etching masking used being the later geometry of the microstructure
  • the recess 19 is thus first structured out of the structuring layer 11 in such a way that a negative structure of the microstructure 18 to be produced thereafter is formed at least approximately in the area of the structuring layer 11.
  • the surface shape of the structured recess is
  • the cavern 20 forms, which extends in depth to the structuring layer 11.
  • the surface shape of this cavern 20, viewed from the rear of the supporting body 12, is also rectangular.
  • the cavern 20 is preferably dimensioned such that it is in all Dimensions, ie length, width and depth, is significantly larger than the recess 19.
  • the cavern 20 can also be etched before the recess 19 is produced. The preceding etching of the recess 19 is preferred, however, since this relieves the structuring layer 11.
  • FIG. 3 shows the method step following the structuring of the recess 19 and the cavern 20, the recess 19 being at least largely compatible with that at this stage with the aid of a microdosing device known per se, in particular a piston dispenser or a screw dispenser liquid functional material 10 is filled.
  • a microdosing device known per se, in particular a piston dispenser or a screw dispenser liquid functional material 10 is filled.
  • this filling is preferably carried out with the aid of a microdosing device with integrated image processing or checked with the aid of an image processing device.
  • a temperature treatment which at least temporarily lowers the viscosity of the liquid functional material 10, is optionally carried out.
  • suitable temperatures are typically between 50 ° C and 130 C C.
  • a flowing of the charged functional material 10 is the one hand, achieved a gleicholitaryige coverage as possible or off the recess produced stuffing 19 ensure, on the other hand is determined by the lateral boundary of the However, recess 19 at the same time prevents excessive flow of the filled functional material 10.
  • the limitation also prevents the filled functional material 10 from flowing away, possibly during the subsequent one Process steps with critical temperatures, ie temperatures significantly lower the viscosity of the filled functional material 10.
  • FIG. 4 finally shows how the recess 19 is filled by the functional material 10, so that the finished microstructure 18 has formed.
  • the liquid functional material 10 is finally cured in a manner known per se, for example by UV curing or a temperature treatment.
  • microstructures 18 can be used, for example, as mechanical protection of sensitive sensor elements or actuator elements, serve for example for an inertial mass of an acceleration sensor.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

L'invention concerne un corps structuré, en particulier un capteur infrarouge (5), qui comprend un corps de support (12) et une couche de structuration (11) qui est en liaison, au moins par zones, avec le corps de support (12), cette couche de structuration (11) présentant, au moins par zones, un microcomposant (17). La couche de structuration (11) est en outre, par zones, pourvue d'au moins un évidement (19) qui, au moins dans une large mesure, est rempli d'un matériau fonctionnel (10) durci, en particulier d'un matériau absorbant les infrarouges, ce matériau étant, au moment où il est introduit dans la cavité, à l'état liquide. L'invention concerne également un procédé permettant de réaliser une microstructure (18) constituée d'un matériau fonctionnel (10), procédé selon lequel, dans la zone de la surface d'une couche de structuration (11), on réalise un évidement (19) dans la couche de structuration (11), lequel forme, au moins approximativement, une structure négative de la microstructure (18) à former, et ladite cavité (19) est remplie, au moins dans une large mesure, avec un matériau (10) se trouvant d'abord à l'état liquide. Ce procédé peut en particulier être mis en oeuvre pour la réalisation du corps structuré, c'est-à-dire du capteur infrarouge (5), selon l'invention, ainsi que pour la protection mécanique de microcomposants (17) sensibles.
PCT/DE2001/000539 2000-02-29 2001-02-13 Corps structure, en particulier capteur a infrarouge, et procede de realisation d'une microstructure constituee d'un materiau fonctionnel Ceased WO2001065222A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10009593.3 2000-02-29
DE2000109593 DE10009593A1 (de) 2000-02-29 2000-02-29 Strukturkörper, insbesondere Infrarot-Sensor und Verfahren zur Erzeugung einer Mikrostruktur aus einem Funktionswerkstoff

Publications (1)

Publication Number Publication Date
WO2001065222A1 true WO2001065222A1 (fr) 2001-09-07

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DE (1) DE10009593A1 (fr)
WO (1) WO2001065222A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1296122A3 (fr) * 2001-09-10 2003-06-11 PerkinElmer Optoelectronics GmbH Capteur pour la mesure sans contact d'une température

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10033589A1 (de) 2000-07-11 2002-01-31 Bosch Gmbh Robert Mikrostrukturierter Thermosensor
DE10200558A1 (de) * 2002-01-09 2003-07-24 Bosch Gmbh Robert Temperatursensor
DE10302518B4 (de) * 2003-01-23 2005-07-21 Robert Bosch Gmbh Verfahren zur bereichsweisen Erzeugung einer Mikrostruktur auf einem Grundkörper
DE10321639A1 (de) * 2003-05-13 2004-12-02 Heimann Sensor Gmbh Infrarotsensor mit optimierter Flächennutzung
US8169045B2 (en) 2009-04-28 2012-05-01 Infineon Technologies Ag System and method for constructing shielded seebeck temperature difference sensor

Citations (4)

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Publication number Priority date Publication date Assignee Title
JPS63318175A (ja) * 1987-06-19 1988-12-27 New Japan Radio Co Ltd サ−モパイル
US5056929A (en) * 1990-01-30 1991-10-15 Citizen Watch Co., Ltd. Temperature compensation type infrared sensor
DE4041851A1 (de) * 1990-12-24 1992-07-02 Wandel & Goltermann Verfahren zum messen der leistung einer optischen strahlung, anordnung zur durchfuehrung des verfahrens, und temperaturmessquarz zur verwendung in der anordnung zur durchfuehrung des verfahrens
DE19752926A1 (de) * 1997-11-28 1999-06-10 Bosch Gmbh Robert Verfahren zum Aufbringen eines Schutzlacks auf einen Wafer

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JPS60180180A (ja) * 1984-02-27 1985-09-13 Matsushita Electric Ind Co Ltd 赤外線検出素子
DE4244607A1 (de) * 1992-12-31 1994-07-07 Hl Planartechnik Gmbh Thermoelektrischer Strahlungssensor, insbesondere für infrarotes und sichtbares Licht

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63318175A (ja) * 1987-06-19 1988-12-27 New Japan Radio Co Ltd サ−モパイル
US5056929A (en) * 1990-01-30 1991-10-15 Citizen Watch Co., Ltd. Temperature compensation type infrared sensor
DE4041851A1 (de) * 1990-12-24 1992-07-02 Wandel & Goltermann Verfahren zum messen der leistung einer optischen strahlung, anordnung zur durchfuehrung des verfahrens, und temperaturmessquarz zur verwendung in der anordnung zur durchfuehrung des verfahrens
DE19752926A1 (de) * 1997-11-28 1999-06-10 Bosch Gmbh Robert Verfahren zum Aufbringen eines Schutzlacks auf einen Wafer

Non-Patent Citations (1)

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Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 166 (E - 746) 20 April 1989 (1989-04-20) *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1296122A3 (fr) * 2001-09-10 2003-06-11 PerkinElmer Optoelectronics GmbH Capteur pour la mesure sans contact d'une température
CN100408990C (zh) * 2001-09-10 2008-08-06 帕尔金艾光电子股份有限公司 不接触式温度测量传感器及其制造方法、半导体芯片

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