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WO2017061636A1 - Procédé de préparation de dispositif microélectromécanique (mems), conditionnement de mems et terminal utilisateur - Google Patents

Procédé de préparation de dispositif microélectromécanique (mems), conditionnement de mems et terminal utilisateur Download PDF

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Publication number
WO2017061636A1
WO2017061636A1 PCT/KR2015/010526 KR2015010526W WO2017061636A1 WO 2017061636 A1 WO2017061636 A1 WO 2017061636A1 KR 2015010526 W KR2015010526 W KR 2015010526W WO 2017061636 A1 WO2017061636 A1 WO 2017061636A1
Authority
WO
WIPO (PCT)
Prior art keywords
hard mask
mems
pattern
mems structure
mask pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2015/010526
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English (en)
Korean (ko)
Inventor
서평보
문상희
이종성
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STANDING EGG Inc
Original Assignee
STANDING EGG Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STANDING EGG Inc filed Critical STANDING EGG Inc
Priority to PCT/KR2015/010526 priority Critical patent/WO2017061636A1/fr
Publication of WO2017061636A1 publication Critical patent/WO2017061636A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • H10P76/00—

Definitions

  • the parallel plate method In a MEMS device that senses capacitance between a plurality of plates, the parallel plate method must form a step in the plurality of plates. Conventionally, by forming a step using a plurality of masks (such as a hard mask or a photoresist mask), it is difficult to realize alignment characteristics between a plurality of plates in the same manner as design conditions. In addition, due to the difference in the gap space between the plurality of plates, as the capacitance in the unintended direction is sensed, there is a problem in that the axial sensitivity is deteriorated.
  • a plurality of masks such as a hard mask or a photoresist mask
  • Another technical problem of the present invention is to provide a method for manufacturing a MEMS device capable of improving the axial sensitivity characteristic of a parallel plate-based MEMS device.
  • MEMS device manufacturing method for solving the above technical problem, providing a substrate comprising a silicon oxide layer and a silicon layer formed on the silicon oxide layer, a hard mask on the silicon layer Forming a pattern, reducing a thickness of a region requiring a step among the hard mask patterns, forming a MEMS structure pattern by first etching the silicon layer using the hard mask pattern, and forming the hard mask pattern Forming a step in the MEMS structure pattern by performing secondary etching on the MEMS structure pattern, and removing a portion of the silicon oxide layer to complete a movable MEMS structure.
  • reducing the thickness of a region requiring a step among the hard mask patterns may include: a photoresist pattern exposing a region requiring a step among the hard mask patterns on the silicon layer and the hard mask pattern; And forming a portion of the hard mask pattern to be etched using the photoresist pattern.
  • the MEMS structure may have a parallel plate-based structure.
  • MEMS device manufacturing method for solving the above technical problem, providing a substrate comprising a silicon oxide layer and a silicon layer formed on the silicon oxide layer, a hard mask on the silicon layer Forming a pattern, reducing a thickness of a portion of the hard mask pattern, forming a MEMS structure pattern by first etching the silicon layer using the hard mask pattern, using the hard mask pattern Second etching the MEMS structure pattern to reduce the thickness of a portion of the MEMS structure pattern; and removing a portion of the silicon oxide layer to complete a movable MEMS structure.
  • FIG. 9 is a diagram schematically illustrating a MEMS package including a MEMS device manufactured by the method of manufacturing a MEMS device according to an embodiment of the present invention.
  • FIGS. 2 to 5 are cross-sectional views schematically illustrating a method of manufacturing a MEMS device according to an embodiment of the present invention.
  • step S50 the silicon layer 130 is first etched using the hard mask pattern 155 to form the MEMS structure pattern 135.
  • the primary etching may be a deep reactive ion etching (DRIE) process, but is not limited thereto.
  • step S60 the MEMS structure pattern 135 is secondly etched using the hard mask pattern 155 to form a step in the MEMS structure pattern 135. Specifically, only the portion 151 for forming the step of the hard mask pattern 155 is removed and the remaining portion is retained to expose a portion of the MEMS structure pattern 135 covered by the portion 151. In order to remove the portion 151, a blanket etching process or the like may be used.
  • the sensor hub 3000 may include a plurality of MEMS devices 3200 and 3400 and a plurality of ASIC devices 3300 and 3500. At least one of the plurality of MEMS devices 3200 and 3400 may be formed in substantially the same manner as the MEMS device 1 described with reference to FIG. 8.
  • the first MEMS device 3200 may be an acceleration sensor
  • the second MEMS device 3400 may be a gyro sensor, but is not limited thereto.
  • the plurality of ASIC devices 3300 and 3500 may process sensing signals of the corresponding MEMS devices 3200 and 3400, respectively.
  • the processing device 3100 may function as a coprocessor for professionally performing sensor data processing on behalf of the application processor. Unlike shown, three or more MEMS devices and ASIC devices may be provided within the sensor hub 3000.
  • FIG. 12 is a diagram schematically illustrating a user terminal including a MEMS device manufactured by a method of manufacturing a MEMS device according to an embodiment of the present invention.
  • the user terminal 200 includes a wireless communication unit 4100, an A / V input unit 4200, a user input unit 4300, a sensing unit 4400, an output unit 4500, a storage unit 4600, and the like.
  • the interface unit 4700 includes a control unit 4800 and a power supply unit 4900.
  • the user input unit 4300 receives various information from the user.
  • the user input unit 4300 may include input means such as a key, a button, a switch, a touch pad, and a wheel.
  • input means such as a key, a button, a switch, a touch pad, and a wheel.
  • a touch screen may be configured.
  • the MEMS device 1 described with reference to FIG. 8 or the sensor hubs 2000 and 3000 described with reference to FIGS. 10 to 11 may be provided in the sensor unit 4400.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)

Abstract

La présente invention porte sur un procédé de préparation de dispositif microélectromécanique (MEMS), un conditionnement de MEMS et un terminal utilisateur. Le procédé de préparation de dispositif MEMS comprend les étapes consistant à : fournir un substrat comprenant une couche d'oxyde de silicium et une couche de silicium qui est formée sur la couche d'oxyde de silicium ; former un motif de masque dur sur la couche de silicium ; réduire l'épaisseur d'une zone nécessitant une partie en forme de gradin dans le motif de masque dur ; former un motif de structure MEMS au moyen de la gravure primaire de la couche de silicium en utilisant le motif de masque dur ; former une partie en forme de gradin sur le motif de structure MEMS au moyen de la gravure secondaire du motif de structure MEMS à l'aide du motif de masque dur ; et compléter une structure MEMS mobile au moyen de l'élimination d'une partie de la couche d'oxyde de silicium.
PCT/KR2015/010526 2015-10-06 2015-10-06 Procédé de préparation de dispositif microélectromécanique (mems), conditionnement de mems et terminal utilisateur Ceased WO2017061636A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/KR2015/010526 WO2017061636A1 (fr) 2015-10-06 2015-10-06 Procédé de préparation de dispositif microélectromécanique (mems), conditionnement de mems et terminal utilisateur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2015/010526 WO2017061636A1 (fr) 2015-10-06 2015-10-06 Procédé de préparation de dispositif microélectromécanique (mems), conditionnement de mems et terminal utilisateur

Publications (1)

Publication Number Publication Date
WO2017061636A1 true WO2017061636A1 (fr) 2017-04-13

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/010526 Ceased WO2017061636A1 (fr) 2015-10-06 2015-10-06 Procédé de préparation de dispositif microélectromécanique (mems), conditionnement de mems et terminal utilisateur

Country Status (1)

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WO (1) WO2017061636A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003218009A (ja) * 2002-01-23 2003-07-31 Seiko Epson Corp エッチングパターン形成方法、及び微細パターン加工品
JP2005118943A (ja) * 2003-10-17 2005-05-12 Sony Corp マイクロマシンの製造方法およびマイクロマシン
KR20060121068A (ko) * 2005-05-23 2006-11-28 (주)에스엠엘전자 다양한 단차를 갖는 미세 구조물의 제조 방법
JP2011091127A (ja) * 2009-10-21 2011-05-06 Konica Minolta Holdings Inc Ｓｉ基板加工方法
JP2013084996A (ja) * 2013-02-01 2013-05-09 Seiko Epson Corp ノズルプレートの製造方法及び流体噴射ヘッドの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003218009A (ja) * 2002-01-23 2003-07-31 Seiko Epson Corp エッチングパターン形成方法、及び微細パターン加工品
JP2005118943A (ja) * 2003-10-17 2005-05-12 Sony Corp マイクロマシンの製造方法およびマイクロマシン
KR20060121068A (ko) * 2005-05-23 2006-11-28 (주)에스엠엘전자 다양한 단차를 갖는 미세 구조물의 제조 방법
JP2011091127A (ja) * 2009-10-21 2011-05-06 Konica Minolta Holdings Inc Ｓｉ基板加工方法
JP2013084996A (ja) * 2013-02-01 2013-05-09 Seiko Epson Corp ノズルプレートの製造方法及び流体噴射ヘッドの製造方法

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