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WO2018026032A1 - Dispositif mems doté d'une structure d'arrêt améliorée, son procédé de fabrication, et boîtier mems et système informatique qui comprennent un dispositif mems - Google Patents

Dispositif mems doté d'une structure d'arrêt améliorée, son procédé de fabrication, et boîtier mems et système informatique qui comprennent un dispositif mems Download PDF

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Publication number
WO2018026032A1
WO2018026032A1 PCT/KR2016/008590 KR2016008590W WO2018026032A1 WO 2018026032 A1 WO2018026032 A1 WO 2018026032A1 KR 2016008590 W KR2016008590 W KR 2016008590W WO 2018026032 A1 WO2018026032 A1 WO 2018026032A1
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WO
WIPO (PCT)
Prior art keywords
forming
wafer
mems device
mass structure
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2016/008590
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English (en)
Korean (ko)
Inventor
서평보
문상희
김덕수
이종성
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STANDING EGG Inc
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STANDING EGG Inc
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Priority to PCT/KR2016/008590 priority Critical patent/WO2018026032A1/fr
Priority to KR1020160105524A priority patent/KR20180016220A/ko
Publication of WO2018026032A1 publication Critical patent/WO2018026032A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0181—See-saws
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes

Definitions

  • the present invention relates to a MEMS device having an improved stopper structure, a method of manufacturing the same, a MEMS package and a computing system including the MEMS device.
  • MEMS Micro Electro Mechanical Systems
  • military applications such as satellites, missiles, and unmanned aerial vehicles, and for hand shake prevention, mobile phones, cameras, camcorders, etc. It is used for various purposes such as motion sensing and navigation for game consoles.
  • Stictions in mass structures are causing fatal problems for MEMS devices. Stictions occurring during the manufacturing process of a MEMS device lower its yield, while stictions occurring during use of a MEMS device cause reliability problems of the MEMS device.
  • the stiction that occurs during the manufacturing process of the MEMS device mainly occurs during the release of the mass structure, and the stiction that occurs during the use of the MEMS device is caused by a change in high temperature and humidity by an external force exceeding the restoring force of the mass structure. It is caused by various reasons, such as by deformation of the mass structure resulting from or by the electrical force between the mass structures.
  • An object of the present invention is to provide an MEMS device having an improved stopper structure, a manufacturing method thereof, a MEMS package and a computing system including the MEMS device.
  • the sensor wafer has a teeter-totter structure, and includes a z-axis mass structure that is rotatable about a rotation axis perpendicular to the acceleration direction, wherein the cap wafer includes a plurality of z-axis mass structures facing the z-axis mass structure.
  • the sensor wafer has a teeter-totter structure and includes a z-axis mass structure that is rotatable about a rotation axis perpendicular to the acceleration direction, wherein the cap wafer includes a plurality of sensing electrodes and the plurality of sensing electrodes.
  • a plurality of stopper patterns disposed adjacent to the sensing electrode, respectively, and at least one wire electrically connecting the plurality of stopper patterns to a ground.
  • a part of the at least one wire may include a conductive pattern formed on the plurality of stopper patterns.
  • the heights of the plurality of stopper patterns may be higher than the heights of the plurality of sensing electrodes and lower than the heights of the filler patterns.
  • the z-axis mass structure includes a first area having a first area and a second area having a second area greater than the first area, wherein the cap wafer is the z-axis mass structure
  • a cavity corresponding to the second region of the substrate may further include a cavity, and some of the plurality of stopper patterns may be disposed adjacent to the cavity.
  • forming the sensor wafer comprises forming a z-axis mass structure having a teeter-totter structure and rotatable about an axis of rotation perpendicular to the direction of acceleration;
  • the forming of the cap wafer may include forming an insulating pattern including a filler pattern corresponding to the bonding pad and a plurality of stopper patterns, adjacent to the plurality of stopper patterns on the insulating pattern, respectively;
  • bonding the sensor wafer and the cap wafer comprises electrically connecting the z-axis mass structure of the sensor wafer and the at least one wire of the cap wafer.
  • forming the sensor wafer comprises forming a z-axis mass structure having a teeter-totter structure and rotatable about an axis of rotation perpendicular to the direction of acceleration;
  • the forming of the cap wafer may include forming an insulating pattern including a filler pattern corresponding to the bonding pad and a plurality of stopper patterns, adjacent to the plurality of stopper patterns on the insulating pattern, respectively;
  • a plurality of sensing electrodes facing the structure and at least one wire electrically connected to the plurality of stopper patterns Comprises the step of including the step of forming the conductive pattern and electrically connected to the step of bonding the sensor wafer and the cap wafer is ground with the at least one wiring of the cap wafer.
  • the forming of the conductive pattern may include forming the conductive pattern so that a part of the at least one wire is formed on the plurality of stopper patterns.
  • the forming of the insulating pattern may include forming the insulating pattern such that the heights of the plurality of stopper patterns are higher than the heights of the plurality of sensing electrodes and lower than the heights of the filler patterns. have.
  • the forming of the z-axis mass structure includes: the z-axis mass structure including a first area having a first area and a second area having a second area greater than the first area.
  • Forming the z-axis mass structure and forming the cap wafer further comprises forming a cavity in a substrate corresponding to the second region of the z-axis mass structure, forming the insulating pattern The insulating pattern may be formed such that a part of the plurality of stopper patterns is disposed adjacent to the cavity.
  • MEMS package according to another aspect of the present invention for solving the above problems includes any one of the above-described MEMS device.
  • a computing system for solving the above problems includes any one of the above-described MEMS device.
  • the present invention by using a plurality of stopper patterns to reduce the contact area of the mass structure when the stiction occurs, it is possible to prevent the stiction of the MEMS device.
  • the present invention since a plurality of stopper patterns are formed in the fixed cap wafer, compared with the case where the stopper pattern is formed in the moving mass structure, it is possible to prevent nonlinearity of the mass structure and the resulting noise.
  • the plurality of stopper patterns are electrically connected to the mass structure or the ground, the electric force that can be generated in the stopper pattern is removed, and further, the stiction failure due to electrical charge can be prevented. Can be.
  • FIG. 1 is a plan view schematically showing the structure of a MEMS device according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view schematically showing the structure of a MEMS device according to an embodiment of the present invention.
  • FIG 3 is a plan view schematically showing the structure of a MEMS device according to another embodiment of the present invention.
  • FIG. 8 is a diagram schematically illustrating a MEMS package including a MEMS device according to an embodiment of the present invention.
  • FIGS. 9 to 10 are schematic diagrams of a sensor hub including a MEMS device according to an embodiment of the present invention.
  • FIG. 11 is a schematic diagram of a computing system including a MEMS device in accordance with an embodiment of the present invention.
  • first, second, etc. are used to describe various elements, components and / or sections, these elements, components and / or sections are of course not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Therefore, the first device, the first component, or the first section mentioned below may be a second device, a second component, or a second section within the technical spirit of the present invention.
  • a device described as "below or beneath” of another device may be placed “above” of another device.
  • the exemplary term “below” can encompass both an orientation of above and below.
  • the device may be oriented in other directions as well, in which case spatially relative terms may be interpreted according to orientation.
  • an acceleration sensor among various MEMS devices will be described as an example.
  • the present invention is not limited thereto, and a person of ordinary skill in the art to which the present invention pertains is not limited to the technical idea or essential to any MEMS device such as a gyro sensor, a pressure sensor, a microphone, as well as an acceleration sensor. It will be appreciated that the same may be applied substantially without changing the feature.
  • FIG. 1 is a plan view schematically showing the structure of a MEMS device according to an embodiment of the present invention
  • Figure 2 is a cross-sectional view schematically showing the structure of a MEMS device according to an embodiment of the present invention.
  • MEMS device 1 according to an embodiment of the present invention is shown.
  • the MEMS device 1 includes a sensor wafer 100 and a cap wafer 200 formed on the sensor wafer 100.
  • the sensor wafer 100 includes a mass structure 150 that is movable in accordance with an external force (or an inertial force due to an external force).
  • the mass structure 150 has a teeter-totter structure and is rotatable about a predetermined axis of rotation.
  • the mass structure 150 is disposed on the substrate 110 of the sensor wafer 100 and is connected to the substrate 110 by the support structure 160.
  • Support structure 160 may be formed in the opening.
  • Support structure 160 may include pedestal 161, one or more torsion bars 162.
  • the torsion bar 162 may extend from both sides of the pedestal 161 to be connected to the mass structure 150. Although not clearly shown, unlike the illustrated in FIG. 1, the torsion bar 162 may extend from one or more surfaces of the pedestal 161.
  • the support structure 160 may further include a post 163 connecting the pedestal 161 and the substrate 110.
  • the torsion bar 162 may define a rotation axis in which the mass structure 150 rotates with respect to the pedestal 161 and the substrate 110.
  • the mass structure 150 may be divided into a plurality of regions.
  • the axis of rotation can be defined such that the moment of the first region of the mass structure 150 (left region of FIG. 1) is less than the moment of the second region of the mass structure 150 (right region of FIG. 1). (Ie, the first area has a first area, and the second area has a second area larger than the first area), but is not limited thereto.
  • An empty space exists between the mass structure 150 and the substrate 110, so that the mass structure 150 is rotatable.
  • a wire providing a predetermined voltage may be connected to the pedestal 161.
  • the substrate 110, the mass structure 150, and the support structures 161 and 162 may include silicon, and the support structure 163 may include silicon oxide, but is not limited thereto.
  • the cap wafer 200 includes a plurality of sensing electrodes 241.
  • the plurality of sensing electrodes 241 may be formed on the substrate 210 of the cap wafer 200.
  • the plurality of sensing electrodes 241 may be disposed to face the mass structure 150 on the mass structure 150.
  • the plurality of sensing electrodes 241 may include a metal, but is not limited thereto.
  • the first sensing electrode (the sensing electrode 241 located in the left region of FIG. 1) forms a first capacitor together with the first region of the corresponding mass structure 150, and the second sensing electrode (FIG. 1).
  • the sensing electrode 241 positioned in the right region of the second electrode may form a second capacitor together with the second region of the corresponding mass structure 150.
  • a wire providing a predetermined voltage may be connected to the plurality of sensing electrodes 241.
  • a predetermined cavity 250 may be formed in the substrate 210.
  • the cavity 250 may be disposed to correspond to the second region of the mass structure 150 on the upper portion of the second region of the mass structure 150.
  • the cavity 250 may be disposed adjacent to the second sensing electrode.
  • the width of the cavity 250 is greater than the width of the mass structure 150, and when the rotational movement of the mass structure 150 rotates, an end portion of the second region of the mass structure 150 may move into a space in the cavity 250. .
  • the sensor wafer 100 and the cap wafer 200 may be bonded to seal the mass structure 150.
  • the sensor wafer 100 and the cap wafer 200 may be connected by a filler pattern to be described later.
  • the filler pattern may space the cap wafer 200 from the sensor wafer 100 to secure a space in which the mass structure 150 may rotate.
  • the mass structure 150 may be used for z-axis acceleration sensing.
  • the direction of acceleration and the axis of rotation of the mass structure 150 are perpendicular.
  • the mass structure 150 rotates about the rotation axis according to the direction and magnitude of the acceleration, and the capacitance of the first capacitor and the capacitance of the second capacitor may increase or decrease in opposite directions. That is, when the capacitance of the first capacitor is increased, the capacitance of the second capacitor is decreased, and when the capacitance of the first capacitor is decreased, the capacitance of the second capacitor may be increased.
  • the mass structure 150 and the plurality of sensing electrodes 241 may be parallel to each other. The direction and magnitude of acceleration may be determined by using the change in capacitance.
  • the MEMS device 1 has the following improved stopper structure.
  • a plurality of stopper patterns 223 are disposed in the cap wafer 200 adjacent to the plurality of sensing electrodes 241, respectively.
  • a portion of the plurality of stopper patterns 223 is disposed adjacent to the left edge of the first sensing electrode, and another portion of the plurality of stopper patterns 223 is adjacent to the right edge of the second sensing electrode and the cavity 250.
  • a part of the plurality of stopper patterns 223 is disposed to face an end portion of the first region of the mass structure 150, such that an end portion of the second region of the mass structure 150 is moved to the substrate when the rotation of the mass structure 150 rotates.
  • the plurality of stopper patterns 223 are disposed to face the central portion of the second region of the mass structure 150 such that an end portion of the first region of the mass structure 150 is rotated when the mass structure 150 is rotated. Can prevent stiction that may occur in contact with the region A of the upper surface of the substrate 110.
  • the plurality of stopper patterns 223 may be higher than the height of the plurality of sensing electrodes 241 and lower than the height of the filler pattern, and may have an appropriate height to prevent contact between the mass structure 150 and the substrate 110. have.
  • the plurality of stopper patterns 223 may include an insulating material such as silicon oxide, but is not limited thereto.
  • the plurality of stopper patterns 223 may be electrically connected to the mass structure 150 by a predetermined wiring 243.
  • a conductive pattern to be described later may be formed on the plurality of stopper patterns 223, and the conductive pattern may be connected to the wiring 243.
  • the wiring 243 may be electrically connected to the conductive pad 242 facing the support structure 160.
  • the conductive pad 242 may be in contact with the pedestal 161 of the support structure 160.
  • the mass structure 150 of the MEMS device 1 to 2 the mass structure 150 of the MEMS device 1, the support structure 160, the plurality of electrodes 241, the plurality of stopper patterns 223, the cavity 250, and the like.
  • the size, shape, material, etc. of the component may vary in various embodiments.
  • FIG. 3 is a plan view schematically showing the structure of a MEMS device according to another embodiment of the present invention. For convenience of explanation, the description will focus on differences from the MEMS device 1 of FIG. 1.
  • a MEMS device 2 according to another embodiment of the present invention is shown.
  • the plurality of stopper patterns 223 may be electrically connected to the ground by a predetermined wiring 243.
  • a conductive pattern to be described later may be formed on the plurality of stopper patterns 223, and the conductive pattern may be connected to the wiring 243.
  • the wiring 243 may be electrically connected to a sealing pattern formed along the outer periphery of the cap wafer 200.
  • the sealing pattern may be formed on the filler pattern for sealing.
  • the sealing pattern may be electrically connected to the GND pads on the opposite side of the cap wafer 200 through the silicon through electrode described below.
  • the silicon through electrode may be electrically connected to the GND pad through a redistribution layer (RDL) line.
  • RDL redistribution layer
  • FIGS. 4 to 7 schematically illustrate a method of manufacturing a MEMS device according to an embodiment of the present invention. It is a figure which shows.
  • a sensor wafer 100 is formed.
  • a substrate is provided.
  • the substrate includes a silicon handle layer 110, an insulating layer 120, and a silicon device layer 130.
  • the insulating layer 120 is formed on the silicon handle layer 110, and the silicon device layer 130 is formed on the insulating layer 120.
  • the insulating layer 120 may include silicon oxide, but is not limited thereto.
  • the substrate may be provided by oxidizing the silicon substrate 110 to form the insulating layer 120, and depositing the silicon layer 130 on the insulating layer 120.
  • a silicon-on-insulator (SOI) substrate may be provided.
  • a bonding pad 140 is formed on the silicon device layer 130.
  • the bonding pad 140 may include germanium, but is not limited thereto. Subsequently, a portion of the silicon device layer 130 is etched to form a mass structure pattern, and a portion of the insulating layer 120 below the mass structure pattern is released to complete the mass structure 150 described above. Vapor etching may be used to remove the insulating layer 120 below the mass structure pattern.
  • a cap wafer 200 is formed.
  • the substrate 210 is provided.
  • the substrate 210 may be a silicon substrate, but is not limited thereto.
  • an SOI substrate may be used, similarly to the sensor wafer 100.
  • a plurality of trenches 211 are formed on an upper surface of the substrate 210, and a plurality of through insulation patterns 221 are formed on sidewalls and bottom surfaces of the plurality of trenches 211.
  • conductive materials are filled in the plurality of through insulation patterns 221 in the plurality of trenches 211 to form the plurality of silicon through electrode patterns 230.
  • the plurality of through insulation patterns 221 may include silicon oxide
  • the plurality of through silicon electrode patterns 230 may include polysilicon, but is not limited thereto.
  • a photolithography process, an etching process, an oxidation process, and a CMP ( Chemical Mechanical Planarization) process and the like can be used.
  • an insulating layer 220 and a plurality of insulating patterns 222 and 223 are formed on the substrate 210, the plurality of through insulation patterns 221, and the silicon through electrode pattern 230.
  • the plurality of insulating patterns 222 and 223 include a plurality of filler patterns 222 and the plurality of stopper patterns 223 described above.
  • the plurality of filler patterns 222 may be formed to correspond to the bonding pads 140 adjacent to the plurality of trenches 211 or the plurality of silicon through electrode patterns 230.
  • a plurality of filler patterns 222 may be formed along the outer periphery of the cap wafer 200 for sealing.
  • the plurality of stopper patterns 223 may be formed to have a height higher than that of the plurality of sensing electrodes 241 and lower than that of the plurality of filler patterns 222.
  • the filler pattern 222 and the stopper pattern 223 may include an insulating material such as silicon oxide, but are not limited thereto.
  • an insulating material such as silicon oxide
  • a deposition process, a photolithography process, an etching process, or the like may be used.
  • a portion of the insulating layer 220 on the silicon through electrode pattern 211 is etched to expose at least a portion of the upper surface of the silicon through electrode pattern 211.
  • a conductive pattern 240 is formed on at least a portion of the upper surface of the silicon through electrode pattern 211, a part of the insulating layer 220, the plurality of filler patterns 222, and the plurality of stopper patterns 223.
  • a portion of the conductive pattern 240 may include the plurality of sensing electrodes 241 described above, the conductive pad 242 contacting the pedestal 161 of the support structure 160, and the plurality of stopper patterns 223 described above.
  • the wire 243 may be electrically connected.
  • a portion of the wiring 243 may be formed on the plurality of stopper patterns 223.
  • the wiring 243 may be electrically connected to a sealing pattern formed along an outer circumference of the conductive pad 242 or the cap wafer 200 facing the support structure 160.
  • the conductive pattern 240 may include aluminum or polysilicon, but is not limited thereto.
  • a deposition process, a photolithography process, an etching process, or the like may be used.
  • a portion of the insulating layer 220 and a portion of the substrate 210 are etched to form a cavity 215 in the substrate 210, thereby completing the cap wafer 200.
  • the formation position of the cavity 215 may be variously modified.
  • the sensor wafer 100 and the cap wafer 200 are bonded using the bonding pads 140.
  • the bonding pads 310 and the conductive patterns 240 on the filler pattern 222 may be bonded by eutectic bonding.
  • the mass structure 150 of the sensor wafer 100 and the wiring of the cap wafer 200 may be electrically connected.
  • a silicon through electrode is formed by a grinding process on the bottom surface of the cap wafer 200 by a backside process, and an insulating layer, a repositioning wiring, or a conductive pattern for a pad may be additionally formed.
  • the sealing pattern may be electrically connected to the GND pad through the silicon through electrode and the relocation wiring. Accordingly, the MEMS devices 1 and 2 of FIGS. 1 to 2 or 3 may be completed.
  • FIG. 8 is a diagram schematically illustrating a MEMS package including a MEMS device according to an embodiment of the present invention.
  • the MEMS package 1000 includes a PCB substrate 1100, a MEMS device 1200 stacked on the PCB substrate 1100, and an ASIC device 1300.
  • the MEMS device 1200 may be formed in substantially the same manner as the MEMS devices 1 and 2 described with reference to FIGS. 1 to 2 or 3. 8 illustrates a wire bonding method, but the present invention is not limited thereto, and a flip chip method may be used.
  • FIGS. 9 to 10 are schematic diagrams of a sensor hub including a MEMS device according to an embodiment of the present invention.
  • the sensor hub 2000 may include a processing device 2100, a MEMS device 2200, and an application specific integrated circuit (ASIC) device 2300.
  • the MEMS device 2200 may be formed in substantially the same manner as the MEMS devices 1 and 2 described with reference to FIGS. 1 to 2 or 3.
  • the ASIC device 2300 may process the sensing signal of the MEMS device 2200.
  • the processing device 2100 may function as a coprocessor for professionally performing sensor data processing on behalf of the application processor.
  • the sensor hub 3000 may include a plurality of MEMS devices 3200 and 3400 and a plurality of ASIC devices 3300 and 3500. At least one of the plurality of MEMS devices 3200 and 3400 may be formed in substantially the same manner as the MEMS devices 1 and 2 described with reference to FIGS. 1 to 2 or 3.
  • the first MEMS device 3200 may be an acceleration sensor
  • the second MEMS device 3400 may be a gyro sensor, but is not limited thereto.
  • the plurality of ASIC devices 3300 and 3500 may process sensing signals of the corresponding MEMS devices 3200 and 3400, respectively.
  • the processing device 3100 may function as a coprocessor for professionally performing sensor data processing on behalf of the application processor. Unlike shown, three or more MEMS devices and ASIC devices may be provided within the sensor hub 3000.
  • FIG. 11 is a schematic diagram of a computing system including a MEMS device in accordance with an embodiment of the present invention.
  • the computing system 4000 includes a wireless communication unit 4100, an A / V input unit 4200, a user input unit 4300, a sensing unit 4400, an output unit 4500, a storage unit 4600, and the like.
  • the interface unit 4700 includes a control unit 4800 and a power supply unit 4900.
  • the wireless communication unit 4100 may wirelessly communicate with an external device.
  • the wireless communication unit 4100 may wirelessly communicate with an external device using various wireless communication methods such as mobile communication, WiBro, Wi-Fi, Bluetooth, Zigbee, ultrasonic wave, infrared ray, and RF (Radio Frequency). Can be.
  • the wireless communication unit 4100 may transmit data and / or information received from the external device to the controller 4800, and may transmit data and / or information transmitted from the controller 4800 to the external device.
  • the wireless communication unit 4100 may include a mobile communication module 4110 and a short range communication module 4120.
  • the wireless communication unit 4100 may include the location information module 4130 to obtain location information of the computing system 4000.
  • Location information of the computing system 4000 may be provided from, for example, a GPS positioning system, a WiFi positioning system, a cellular positioning system, or a beacon positioning system, but is not limited to any positioning system. Location information may be provided.
  • the wireless communication unit 4100 may transfer the location information received from the positioning system to the controller 4800.
  • the A / V input unit 4200 is for inputting a video or audio signal and may include a camera module 4210 and a microphone module 4220.
  • the camera module 4210 may include, for example, an image sensor such as a complementary metal oxide semiconductor (CMOS) sensor, a charge coupled device (CCD) sensor, or the like.
  • CMOS complementary metal oxide semiconductor
  • CCD charge coupled device
  • the user input unit 4300 receives various information from the user.
  • the user input unit 4300 may include input means such as a key, a button, a switch, a touch pad, and a wheel.
  • input means such as a key, a button, a switch, a touch pad, and a wheel.
  • a touch screen may be configured.
  • the sensor unit 4400 detects a state of the computing system 4000 or a state of a user.
  • the sensing unit 4400 may include sensing means such as a touch sensor, a proximity sensor, a pressure sensor, a vibration sensor, a geomagnetic sensor, a gyro sensor, an acceleration sensor, and a biometric sensor.
  • the sensing unit 240 may be used for user input.
  • the output unit 4500 notifies the user of various information.
  • the output unit 4500 may output information in the form of text, video or audio.
  • the output unit 4500 may include a display module 4510 and a speaker module 4520.
  • the display module 4510 may be provided in a PDP, LCD, TFT LCD, OLED, flexible display, three-dimensional display, electronic ink display, or any form well known in the art.
  • the output unit 4500 may further comprise any form of output means well known in the art.
  • the storage unit 4600 stores various data and commands.
  • the storage unit 4600 may store system software and various applications for operating the computing system 4000.
  • the storage unit 4600 may include a RAM, a ROM, an EPROM, an EEPROM, a flash memory, a hard disk, a removable disk, or any type of computer readable recording medium well known in the art.
  • the interface unit 4700 serves as a path to an external device connected to the computing system 4000.
  • the interface unit 4700 receives data and / or information from an external device or receives power and transmits the data and / or information to components inside the computing system 4000, or transmits data and / or information inside the computing system 4000 to an external device. It can transmit power or supply internal power.
  • the interface unit 4700 includes, for example, a wired / wireless headset port, a charging port, a wired / wireless data port, a memory card port, a universal serial bus (USB) port, and an identification module. Port may be connected to a connected device, an audio input / output (I / O) port, a video input / output (I / O) port, or the like.
  • the controller 4800 controls other components to control the overall operation of the computing system 4000.
  • the controller 4800 may execute system software and various applications stored in the storage 4600.
  • the controller 2800 may include an integrated circuit such as a microprocessor, a microcontroller, a digital signal processing core, a graphics processing core, an application processor, or the like.
  • the power supply unit 4900 may include a wireless communication unit 4100, an A / V input unit 4200, a user input unit 4300, a sensor unit 4400, an output unit 4500, a storage unit 4600, an interface unit 4700, Supply power for the operation of the controller 4800.
  • the power supply 4900 may include an internal battery.
  • the MEMS devices 1 and 2 described above with reference to FIGS. 1 to 2 or 3 or the sensor hubs 2000 and 3000 described with reference to FIGS. 9 through 10 may be provided in the sensor unit 4400.
  • the method described in connection with an embodiment of the present invention may be implemented as a software module performed by a processor.
  • the software module may reside in RAM, ROM, EPROM, EEPROM, flash memory, hard disk, removable disk, CD-ROM, or any form of computer readable recording medium well known in the art. .

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  • Pressure Sensors (AREA)

Abstract

L'invention porte sur un dispositif MEMS doté d'une structure d'arrêt améliorée, sur son procédé de fabrication, et sur un boîtier MEMS et un système informatique qui comprennent le dispositif MEMS. Le dispositif MEMS comporte une tranche de capteur, une tranche de recouvrement formée sur la tranche de capteur, et un motif de pilier reliant la tranche de capteur et la tranche de recouvrement, la tranche de capteur comprenant une structure de masse d'axe z présentant une structure de bascule et pouvant tourner autour d'un axe de rotation, et qui est perpendiculaire à la direction d'accélération, et la tranche de recouvrement comprenant une pluralité d'électrodes de détection en regard de la structure de masse d'axe z, une pluralité de motifs d'arrêt disposés respectivement adjacents à la pluralité d'électrodes de détection, et au moins un câblage reliant électriquement la pluralité de motifs d'arrêt à la structure de masse d'axe z.
PCT/KR2016/008590 2016-08-04 2016-08-04 Dispositif mems doté d'une structure d'arrêt améliorée, son procédé de fabrication, et boîtier mems et système informatique qui comprennent un dispositif mems Ceased WO2018026032A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/KR2016/008590 WO2018026032A1 (fr) 2016-08-04 2016-08-04 Dispositif mems doté d'une structure d'arrêt améliorée, son procédé de fabrication, et boîtier mems et système informatique qui comprennent un dispositif mems
KR1020160105524A KR20180016220A (ko) 2016-08-04 2016-08-19 개선된 스토퍼 구조를 갖는 mems 장치, 그 제조 방법, 상기 mems 장치를 포함하는 mems 패키지 및 컴퓨팅 시스템

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PCT/KR2016/008590 WO2018026032A1 (fr) 2016-08-04 2016-08-04 Dispositif mems doté d'une structure d'arrêt améliorée, son procédé de fabrication, et boîtier mems et système informatique qui comprennent un dispositif mems

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DE102020204767A1 (de) 2020-04-15 2021-10-21 Robert Bosch Gesellschaft mit beschränkter Haftung Mikromechanische Vorrichtung mit Anschlagsfederstruktur
CN114620671A (zh) * 2022-05-16 2022-06-14 苏州敏芯微电子技术股份有限公司 一种微机电系统传感器及其制备方法
CN114789987A (zh) * 2022-06-23 2022-07-26 苏州敏芯微电子技术股份有限公司 用于感测的封装结构及其制作方法

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US5351542A (en) * 1992-01-27 1994-10-04 Kansei Corporation Acceleration sensor assembly
JPH0969635A (ja) * 1995-08-30 1997-03-11 Nec Corp 静電容量型加速度センサおよびその製造方法
JP2000065855A (ja) * 1998-08-17 2000-03-03 Mitsubishi Electric Corp 半導体加速度スイッチ、半導体加速度スイッチの製造方法
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020204767A1 (de) 2020-04-15 2021-10-21 Robert Bosch Gesellschaft mit beschränkter Haftung Mikromechanische Vorrichtung mit Anschlagsfederstruktur
US11697583B2 (en) 2020-04-15 2023-07-11 Robert Bosch Gmbh Micromechanical device including a stop spring structure
CN114620671A (zh) * 2022-05-16 2022-06-14 苏州敏芯微电子技术股份有限公司 一种微机电系统传感器及其制备方法
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CN114789987B (zh) * 2022-06-23 2022-09-27 苏州敏芯微电子技术股份有限公司 用于感测的封装结构及其制作方法

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