[go: up one dir, main page]

WO2014162387A1 - Structure de connexion par câble et dispositif électrique - Google Patents

Structure de connexion par câble et dispositif électrique Download PDF

Info

Publication number
WO2014162387A1
WO2014162387A1 PCT/JP2013/059827 JP2013059827W WO2014162387A1 WO 2014162387 A1 WO2014162387 A1 WO 2014162387A1 JP 2013059827 W JP2013059827 W JP 2013059827W WO 2014162387 A1 WO2014162387 A1 WO 2014162387A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductor
wire
opening
sealing film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/059827
Other languages
English (en)
Japanese (ja)
Inventor
秀隆 大峡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku Pioneer Corp
Pioneer Corp
Original Assignee
Tohoku Pioneer Corp
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Pioneer Corp, Pioneer Corp filed Critical Tohoku Pioneer Corp
Priority to PCT/JP2013/059827 priority Critical patent/WO2014162387A1/fr
Publication of WO2014162387A1 publication Critical patent/WO2014162387A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
    • H01L2224/48453—Shape of the interface with the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0175—Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09372—Pads and lands
    • H05K2201/09381—Shape of non-curved single flat metallic pad, land or exposed part thereof; Shape of electrode of leadless component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/099—Coating over pads, e.g. solder resist partly over pads
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/10287—Metal wires as connectors or conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10742—Details of leads
    • H05K2201/1075—Shape details
    • H05K2201/10787—Leads having protrusions, e.g. for retention or insert stop
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10742—Details of leads
    • H05K2201/1075—Shape details
    • H05K2201/10795—Details of lead tips, e.g. pointed
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10742—Details of leads
    • H05K2201/1075—Shape details
    • H05K2201/10863—Adaptations of leads or holes for facilitating insertion
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0285—Using ultrasound, e.g. for cleaning, soldering or wet treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
    • H05K2203/1377—Protective layers
    • H05K2203/1383—Temporary protective insulating layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/282—Applying non-metallic protective coatings for inhibiting the corrosion of the circuit, e.g. for preserving the solderability
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/288—Removal of non-metallic coatings, e.g. for repairing

Definitions

  • the present invention relates to a wire connection structure and an electrical device.
  • connection methods uses a bonding wire (hereinafter referred to as a wire).
  • Patent Document 1 discloses connecting an organic EL (Electroluminescence) panel and a driving IC (Integrated Circuit) with a wire.
  • the driving IC is disposed on the sealing resin of the organic EL panel.
  • a cover When providing a conductor on the substrate, a cover may be provided to protect this conductor. On the other hand, when a covering is provided, it is difficult to electrically connect this conductor to another conductor.
  • the conductor is electrically connected to another conductor.
  • the invention according to claim 1 includes a substrate and a wire,
  • the substrate has a conductor and a covering covering the conductor,
  • the wire connection structure is characterized in that the wire passes through the opening of the covering and is connected to the conductor.
  • the invention according to claim 9 is a functional component having a substrate, a conductor formed on the substrate, and a covering covering the conductor; A wire connected to the functional component; With The wire is an electrical device that is connected to the conductor through an opening provided in the covering.
  • FIG. 3 is a plan view illustrating a configuration of a light-emitting device included in the electric apparatus according to Example 1.
  • FIG. 4 is a cross-sectional view taken along line AA in FIG. 3.
  • FIG. 4 is a sectional view taken along the line CC of FIG. 3.
  • FIG. 4 is a sectional view taken along line BB in FIG. 3. It is a figure which shows the modification of FIG.
  • FIG. 6 is a diagram illustrating a configuration of an electrical device according to a second embodiment.
  • FIG. 6 is a diagram illustrating a configuration of an electrical device according to a third embodiment.
  • FIG. 6 is a plan view illustrating a configuration of an electric device according to a fourth embodiment. It is a perspective view of an electric equipment.
  • FIG. 9 is a cross-sectional view illustrating a configuration of an electric device according to a fifth embodiment.
  • FIG. 1A is a plan view showing a wire connection structure according to the first embodiment
  • FIG. 1B is a cross-sectional view taken along the line AA in FIG.
  • at least the first surface of the substrate 100 is formed of an insulator.
  • a conductor 20 is formed on the first surface.
  • the conductor 20 is covered with a sealing film 210 (covering body).
  • the sealing film 210 is, for example, an aluminum oxide film.
  • An opening 212 is formed in the sealing film 210.
  • the opening 212 is located on a part (for example, one end) of the conductor 20 in a plan view.
  • a wire 30 is connected to the conductor 20.
  • the wire 30 is connected to the conductor 20 by having one end 32 passing through the opening 212.
  • the wire 30 is made of, for example, copper, but may be made of another metal (for example, Au).
  • the conductor 20 is a wiring.
  • the shape (outer shape) of the conductor 20 has a short side direction and a long side direction.
  • the short direction is the width direction of the conductor 20, and the long direction corresponds to the length direction of the conductor 20.
  • the opening 212 crosses the conductor 20 in the width direction (Y direction in FIG. 1A). Specifically, the opening 212 is linear, intersects with the conductor 20, and has an intersection.
  • the length of the opening 212 is longer than the width of the conductor 20.
  • the one end 32 of the wire 30 covers the opening 212 in the width direction of the opening 212 (X direction in FIG. 1A).
  • the size of one end 32 (also referred to as one end portion) of the wire 30 in the width direction of the opening 212 is larger than the width of the opening 212.
  • one end of the wire covers the conductor 20.
  • a part of the opening 212 may be configured by the surface layer of the conductor 20 being recessed or bent.
  • the conductor 20 is protected by the sealing film 210. Since the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.
  • the conductor 20 when the conductor 20 is connected to a moisture-sensitive element such as an organic EL element, if the opening 212 is provided, moisture may be transmitted to the element through the conductor 20.
  • one end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it is possible to suppress the sealing ability of the sealing film 210 against the organic EL element from being reduced due to the opening 212 being provided in the sealing film 210.
  • the opening 212 crosses the conductor 20 in the width direction (Y direction in FIG. 1A). For this reason, the opening 212 can be formed by moving the jig while being in contact with the sealing film 210. In this case, the opening 212 can be easily formed.
  • FIG. 2A is a plan view showing a wire connection structure according to the second embodiment.
  • the present embodiment is the same as the wire connection structure according to the first embodiment, except that the width of the opening 212 is small and the entire opening 212 is covered by the one end 32 of the wire 30.
  • the opening 212 shows a case where the wire 30 is formed by penetrating the sealing film 210.
  • one end of the wire 30 is minutely vibrated by ultrasonic waves or the like to crack or break through the sealing film 210.
  • an opening 212 is formed in the sealing film 210.
  • the portion of the sealing film 210 above the connection portion of the conductor 20 is made thinner than the other portions so that the sealing film 210 is easily cracked or pierced. It doesn't matter. Further, not only in the present embodiment but also in the covering body in Embodiment 1 and the examples described later, a part of the covering body may be formed thinner than the other parts.
  • FIG. 2B is a cross-sectional view taken along the line AA in FIG.
  • the outer peripheral edge of one end 32 of the wire 30 is located outside the outer peripheral edge of the opening 212 in the sealing film 210, and the sealing film on the outer peripheral edge of the opening 212 or outside thereof. It is arranged on 210.
  • a part of the sealing film 210 located below the one end 32 of the wire 30 includes a part of the sealing film 210 that is a ridge or a part of the sealing film 210 having unevenness. That is, the surface roughness of this part of the sealing film 210 is larger than the surface roughness of the other part of the sealing film 210.
  • the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.
  • One end 32 of the wire 30 covers the entire opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can further suppress that the sealing capability of the sealing film 210 falls.
  • the sealing film 210 is an oxide film formed on the surface layer of the conductor 20 (for example, an oxide film such as aluminum oxide, It may be a naturally formed oxide film or the like.
  • the opening 212 is formed in the oxide film.
  • FIG. 3 is a plan view illustrating a configuration of the light emitting device 10 (functional component) included in the electric apparatus according to the first embodiment.
  • 4 is a cross-sectional view taken along line AA in FIG. 3
  • FIG. 5 is a cross-sectional view taken along line CC in FIG. 3
  • FIG. 6 is a cross-sectional view taken along line BB in FIG.
  • the electric apparatus according to the present embodiment includes a light emitting device 10 and an electric component 70 (shown in FIG. 8).
  • the light emitting device 10 is, for example, a display or a lighting device.
  • the light emitting device 10 may include the first electrode 110, the organic layer 140, and the second electrode 150 to realize color rendering.
  • the first electrode 110, the organic layer 140, and the second electrode 150 may be formed on one surface without forming the partition wall 170 as a structure to be described later.
  • the case where the light-emitting device 10 is a display is illustrated.
  • the light emitting device 10 includes a substrate 100, a first electrode 110 (lower electrode), an organic EL element, an insulating layer 120, a plurality of first openings 122, a plurality of second openings 124, a plurality of lead wires 130, an organic layer 140, a first layer. It has two electrodes 150 (upper electrode), a plurality of lead wires 160, and a plurality of partition walls 170.
  • the insulating layer 120 and the partition 170 are an example of a structure formed over a substrate.
  • the organic EL element is composed of a laminate in which the organic layer 140 is sandwiched between the first electrode 110 and the second electrode 150. This organic EL element is located between the plurality of partition walls 170. That is, the organic EL element and the lead wiring 160 are located on the first surface side of the substrate 100. And the light emission part is comprised by the organic EL element.
  • the substrate 100 is formed of, for example, glass or a resin material, but may be formed of other materials.
  • the substrate 100 may have flexibility.
  • the first electrode 110 is formed on the first surface side of the substrate 100 and extends in a line shape in the first direction (Y direction in FIG. 3).
  • the first electrode 110 is a transparent electrode made of an inorganic material such as ITO (Indium Thin Oxide) or IZO (indium zinc oxide), or a conductive polymer such as a polythiophene derivative.
  • the first electrode 110 is formed as a part of the conductor (first conductor).
  • the first electrode 110 may be a metal thin film that is thin enough to transmit light.
  • the end of the first electrode 110 is connected to the lead wiring 130.
  • the first conductor is a layer in which the first electrode 110 and the lead wiring 130 are stacked.
  • the lead wiring 130 is a wiring that connects the first electrode 110 and the outside including electric components such as a driving IC.
  • the lead wire 130 is a metal wire made of a metal material or an alloy such as ITO, IZO, Al, Cr, or Ag, which is an oxidized conductive material, but is a wire formed of a conductive material other than metal. There may be. Further, the lead wiring 130 may have a laminated structure in which a plurality of layers are stacked. In this case, one layer of the lead wiring may be formed of the first conductor, and one layer of the first electrode 110 and the lead wiring 130 may be continuously formed of the first conductor.
  • the lead-out wiring 130 may have a configuration in which an alloy layer of Ni and Mo, an alloy layer of Mo and Nb, an Al layer, and an alloy layer of Ni and Mo are stacked in this order.
  • the lead-out wiring 130 may have a configuration in which an alloy layer of Ni and Nb, an alloy layer of Al and Nd, and an alloy layer of Mo and Nb are stacked in this order.
  • the lead wiring 132 and the lead wiring 130 are formed in this order on the substrate 100.
  • the lead-out wiring 132 is formed of the same material as that of the first electrode 110.
  • the lead wires 130 and 132 are formed up to the vicinity of the first opening 122 closest to the lead wire 130.
  • the first electrode 110 is covered with the insulating layer 120, but at least a part of the lead wiring 130 and the lead wiring 132 electrically connected to the first electrode 110 is covered with the insulating layer 120. It doesn't matter.
  • the insulating layer 120 is formed on and between the plurality of first electrodes 110 as shown in FIGS.
  • the insulating layer 120 is a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed.
  • a positive photosensitive resin is used as the insulating layer 120.
  • the insulating layer 120 may be a resin other than a polyimide resin, for example, an epoxy resin or an acrylic resin.
  • a plurality of first openings 122 and a plurality of second openings 124 are formed in the insulating layer 120.
  • the first opening 122 is located at the intersection of the second conductor 152 that becomes the first electrode 110 and the second electrode 150 in plan view.
  • a portion of the second conductor 152 located in the first opening 122 serves as the second electrode 150.
  • the plurality of first openings 122 are provided at predetermined intervals.
  • the plurality of first openings 122 are arranged in the direction in which the first electrode 110 extends.
  • the plurality of first openings 122 are also arranged in the extending direction of the second conductor 152. For this reason, the plurality of first openings 122 are arranged to form a matrix.
  • the second opening 124 is located at one end of each of the plurality of second conductors 152 in plan view.
  • the second openings 124 are arranged along one side of the matrix formed by the first openings 122. When viewed in a direction along one side (for example, the Y direction in FIG. 3), the second openings 124 are arranged at a predetermined interval in the direction along the first electrode 110.
  • the lead wiring 160 or a part of the lead wiring 160 is exposed from the second opening 124.
  • the insulating layer 120 having the first opening 122 and the insulating layer 120 having the second opening 124 may be formed of the same material or different materials. Alternatively, the insulating layer 120 having the second opening 124 may be formed on the outer peripheral side of the substrate 100 with respect to the insulating layer 120 having the first opening 122.
  • the insulating layer 120 having the first opening 122 and the insulating layer 120 having the second opening 124 may be continuous layers or separated layers (separated layers).
  • an organic layer 140 is formed.
  • the organic layer 140 is formed by stacking, for example, a hole transport layer, a light emitting layer, and an electron transport layer.
  • a part of the organic layer refers to, for example, a hole transport layer, a light emitting layer, an electron transport layer, a hole injection layer described later, or an electron injection layer.
  • the hole transport layer is in contact with the first electrode 110, and the electron transport layer is in contact with the second electrode 150. In this way, the organic layer 140 is sandwiched between the first electrode 110 and the second electrode 150.
  • a hole injection layer may be formed between the first electrode 110 and the hole transport layer, or an electron injection layer may be formed between the second electrode 150 and the electron transport layer. . Also, not all of the above layers are necessary. For example, when recombination of holes and electrons occurs in the electron transport layer, the light-emitting layer is unnecessary because the electron transport layer also functions as the light-emitting layer.
  • at least one of the first electrode 110, the hole injection layer, the hole transport layer, the electron transport layer, the electron injection layer, and the second conductor 152 to be the second electrode 150 is an inkjet method or the like. It may be formed using a coating method. Further, an electron injection layer made of an inorganic material such as LiF may be provided between the organic layer 140 and the second electrode 150.
  • each layer constituting the organic layer 140 is shown to protrude to the outside of the first opening 122.
  • each layer which comprises the organic layer 140 may be continuously formed between the adjacent 1st opening 122 in the direction where the partition 170 is extended, or continuously. It may not be formed.
  • the organic layer 140 is not formed in the second opening 124.
  • the organic layer 140 is sandwiched between the first electrode 110 and the second electrode 150.
  • the second electrode 150 is formed above the organic layer 140 and extends in a second direction (X direction in FIG. 3) intersecting the first direction.
  • the second electrode 150 is electrically connected to the organic layer 140.
  • the second electrode 150 may be formed on the organic layer 140 or may be formed on a conductive layer formed on the organic layer 140.
  • the second conductor 152 serving as the second electrode 150 is a metal layer formed of a metal material such as Ag or Al, or a layer formed of an oxidized conductive material such as IZO.
  • the light emitting device 10 includes a plurality of second conductors 152 that are parallel to each other.
  • One second conductor 152 is formed in a direction passing over the plurality of first openings 122.
  • the second conductor 152 is connected to the lead wiring 160.
  • the end portion of the second conductor 152 is positioned on the second opening 124, whereby the second conductor 152 and the lead-out wiring 160 are connected in the second opening 124.
  • a lead wire 162 is formed under the lead wire 160.
  • the width of the lead wiring 162 is larger than the width of the lead wiring 160, but may be small.
  • the lead wires 160 and 162 are formed in a region where the first electrode 110 and the lead wires 130 and 132 are not formed on the first surface side of the substrate 100.
  • the lead wiring 160 may be formed simultaneously with the lead wiring 130, for example, or may be formed in a separate process from the lead wiring 130.
  • the lead wiring 162 may be formed simultaneously with the lead wiring 132, for example, or may be formed in a separate process from the lead wiring 132.
  • the lead-out wiring 162 is formed of the same or different material as the material constituting the first electrode 110.
  • the first electrode 110 is formed of ITO, which is an oxidized conductive material, an oxide conductive material such as ITO having the same or different composition as the ITO constituting the first electrode 110, or IZO.
  • Materials include metal materials such as Al.
  • a part of one end side (light emitting part side) of the lead wiring 160 is covered with the insulating layer 120 and exposed through the second opening 124.
  • the second conductor 152 is connected to the lead wiring 160.
  • a part of the other end side (outer peripheral side of the substrate) of the lead wiring 160 is drawn to the outside of the insulating layer 120. That is, the other end side of the lead wiring 160 is exposed from the insulating layer 120.
  • a partition wall 170 is formed between the adjacent second conductors 152.
  • the partition wall 170 extends in parallel with the second conductor 152, that is, in the second direction.
  • the base of the partition wall 170 is, for example, the insulating layer 120.
  • the partition 170 is, for example, a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed.
  • the partition wall 170 is formed using, for example, a negative photosensitive resin.
  • the partition wall 170 may be made of a resin other than a polyimide resin, for example, an inorganic material such as an epoxy resin, an acrylic resin, or silicon dioxide.
  • the partition wall 170 has a trapezoidal cross-sectional shape (reverse trapezoid). That is, the width of the upper surface of the partition wall 170 is larger than the width of the lower surface of the partition wall 170. Therefore, by forming the partition wall 170 in front of the second conductor 152 (second electrode 150), the second conductor 152 is formed on the first surface s side of the substrate 100 using a vapor deposition method or a sputtering method.
  • the plurality of second electrodes 150 can be formed in a lump by forming them on one surface. Since the second conductor 152 formed on one surface is divided by the partition wall 170, a plurality of second conductors 152 are provided on the organic layer 140.
  • the position at which the second conductor 152 is divided includes, for example, the insulating layer 120 that is the base of the partition 170, the side surface of the partition 170, or the like. Then, by changing the extending direction of the partition wall 170, the second conductor 152 can be patterned into a free shape such as a stripe shape, a dot shape, an icon shape, or a curve. Note that a second conductor 152 is formed on the partition wall 170.
  • the organic layer 140 is made of a coating material
  • the organic layer 140 is formed by applying the coating material to the plurality of first openings 122.
  • the partition 170 is connected to the first openings 122 on both sides of the partition 170, and the first opening on one side of the partition 170 is connected to each other. It may have a function of preventing the organic layer 140 from being continuously formed from 122 to the first opening 122 on the other side.
  • the partition wall 170 is formed before the organic layer 140.
  • a sealing film 210 is formed above the second conductor 152.
  • the sealing film 210 is an aluminum oxide film, for example, and is formed using, for example, an ALD (Atomic Layer Deposition) method.
  • ALD Atomic Layer Deposition
  • the sealing film 210 is formed on the second conductor 152, but another film may exist between the second conductor 152 and the sealing film 210.
  • the film thickness of the sealing film 210 is, for example, not less than 10 nm and not more than 30 nm.
  • a film formed by the ALD method has high step coverage.
  • the step coverage means the uniformity of the film thickness in a portion where there is a step.
  • the sealing film 210 covers the insulating layer 120, the extraction wiring 160, and the extraction wiring 130. Note that the sealing film 210 may be formed using a film formation method other than the ALD method, for example, a CVD method.
  • the lead wire 130 and the lead wire 160 correspond to the conductor 20 in the embodiment. As shown in FIG. 8, the lead wiring 130 and the lead wiring 160 are connected to the electrical component 70, for example, the control IC via the wire 30.
  • the wire 30 passes through the opening 212 provided in the sealing film 210 and is connected to different lead wires 130 (or lead wires 160).
  • the opening 212 may be formed when the wire 30 is connected to the lead wiring 130 and the lead wiring 160. As described above, when the wire 30 is connected to the lead-out wiring 130 and the lead-out wiring 160, one end portion of the wire 30 is microvibrated by ultrasonic waves or the like to crack or break through the sealing film 210. At this time, an opening 212 is formed in the sealing film 210.
  • a part of the sealing film 210 that is on the connection portion with the wire 30 of the lead-out wirings 130 and 160 is replaced with another part. It may be formed thinner than the portion. All the thinly formed portions of the sealing film 210 may be located in the opening 212, or a part may be located outside the opening 212. As long as a crack or the like is generated in the sealing film 210 and the wire 30 can pass through the sealing film 210, the thickness and distribution of the sealing film 210 are not particularly limited.
  • the substrate 100 has a polygonal shape such as a square, a rectangle, or a rectangle.
  • This polygon includes a shape with rounded corners.
  • a plurality of end portions (part) of the lead wires 130 and 132 and end portions (part) of the lead wires 160 and 162 are arranged in parallel along one side of the substrate 100. Therefore, at least one of the end portions of the lead wires 130 and 132 and the end portions of the lead wires 160 and 162 is positioned in parallel inside one opening 212. In the opening 212, the end portions of the lead wirings 130 and 132 and the end portions of the lead wirings 160 and 162 are exposed or appear with respect to the sealing film 210.
  • the opening 212 may be provided individually for each of the end portions of the lead wires 130 and 132 and the end portions of the lead wires 160 and 162. In this case, it can suppress that the one end 32 of the adjacent wire 30 mutually short-circuits.
  • the wire 30 to be connected to the first electrode 110 is connected to the lead wire 130 through the opening 212
  • the wire 30 to be connected to the second electrode 150 is The lead wire 160 is connected to the lead wire 160 through the opening 212.
  • a conductive layer to be the first electrode 110 is formed on the substrate 100, and this conductive layer is selectively removed using etching (for example, dry etching or wet etching). As a result, the first electrode 110 and the lead wires 132 and 162 are formed on the substrate 100.
  • etching for example, dry etching or wet etching
  • a conductive layer to be the lead wirings 130 and 160 is formed on the substrate 100, the first electrode 110, and the lead wiring 162, and the conductive layer is etched (for example, dry etching or wet etching). Selectively remove. Thereby, the lead wires 130 and 160 are formed.
  • an insulating layer is formed on the substrate 100, the first electrode 110, and the lead wires 130 and 160, and this insulating layer is selectively removed using etching (for example, dry etching or wet etching). Thereby, the insulating layer 120, the first opening 122, and the second opening 124 are formed.
  • etching for example, dry etching or wet etching
  • the insulating layer 120 is subjected to heat treatment. Thereby, imidation of the insulating layer 120 proceeds.
  • an insulating film to be the partition wall 170 is formed on the insulating layer 120, and this insulating film is selectively removed using etching (for example, dry etching or wet etching). Thereby, the partition 170 is formed.
  • etching for example, dry etching or wet etching.
  • the cross-sectional shape of the partition 170 can be changed to an inverted trapezoid by adjusting the conditions during exposure and development.
  • the partition wall 170 is a negative resist
  • the portion of the negative resist irradiated with the irradiation light from the exposure light source is cured.
  • the partition 170 is formed by dissolving and removing the uncured portion of the negative resist with a developer.
  • each layer to be an organic layer is sequentially formed in the first opening 122.
  • at least the hole injection layer is formed using a coating method such as spray coating, dispenser coating, inkjet, or printing.
  • the coating material enters the first opening 122, and the coating material is dried, whereby the above-described layers are formed.
  • a coating material used in the coating method a polymer material, a polymer material containing a low-molecular material, or the like is suitable.
  • the coating material for example, a polyalkylthiophene derivative, a polyaniline derivative, triphenylamine, a sol-gel film of an inorganic compound, an organic compound film containing a Lewis acid, a conductive polymer, or the like can be used.
  • the remaining layers (for example, electron transport layers) of the organic layer 140 are formed by a vapor deposition method. However, these layers may also be formed using any of the above-described coating methods.
  • the second electrode 150 is formed on the organic layer 140 by using, for example, a vapor deposition method or a sputtering method.
  • At least one of the layers other than the organic layer 140 is also formed using any of the above-described coating methods. It may be formed.
  • the sealing film 210 is formed using the method described above. Thereafter, a resist pattern is formed on the sealing film 210, and the sealing film 210 is selectively etched (for example, dry etching or wet etching) using the resist pattern as a mask. Thereby, an opening 212 is formed in the sealing film 210. Note that the opening 212 may be formed by moving the jig in contact with the sealing film 210. Note that in the case where a part of the sealing film 210 is formed thinner than the other part, the etching time of the sealing film 210 may be shortened and etching may be stopped before opening.
  • the wire 30 is connected to each of the plurality of lead wires 130 and the plurality of lead wires 160.
  • the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.
  • One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.
  • variety of the part which does not become a light emission area among the edges of the light-emitting device 10 can be narrowed.
  • FIG. 9 is a diagram illustrating the configuration of the electrical device according to the second embodiment.
  • the electrical device according to the present embodiment has the same configuration as the electrical device according to the first embodiment except for the following points.
  • the drawing of the lead wires 130 and 132, the lead wires 160 and 162, and the sealing film 210 is omitted.
  • the light emitting device 10 has a sealing resin layer 300.
  • the sealing resin layer 300 is formed using, for example, a mold.
  • a circuit board 75 is formed on the sealing resin layer 300.
  • the circuit board 75 has a control IC.
  • the lead wires 130 and 160 of the light emitting device 10 are connected to the circuit board 75 via the wires 30.
  • the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.
  • One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.
  • FIG. 10 is a diagram illustrating the configuration of the electrical device according to the third embodiment.
  • the electrical device according to the present embodiment has the same configuration as the electrical device according to the second embodiment, except that the sealing plate 102 is used instead of the sealing resin layer 300.
  • a plurality of electrical components 70 such as a semiconductor package are provided on the sealing plate 102.
  • a conductor 20 is provided on the sealing plate 102.
  • the conductor 20 is a wiring and is connected to the electrical component 70.
  • One end 32 of the wire 30 is connected to the lead wiring 130 (or the lead wiring 160), and the other end of the wire 30 is connected to the conductor 20 on the sealing plate 102.
  • the connection between the first conductor 20 and the wire 30 can also be confirmed by the same method as in the embodiment.
  • the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.
  • One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.
  • FIG. 11 is a plan view illustrating the configuration of the electrical device according to the fourth embodiment.
  • FIG. 12 is a perspective view of the electrical apparatus.
  • the electric apparatus according to the present embodiment has a configuration in which a plurality of light emitting devices 10 are arranged in a matrix. The gap between adjacent light emitting devices 10 is as narrow as possible.
  • the light emitting device 10 has the configuration shown in any one of the second and third embodiments. For this reason, the width
  • the external connection unit 60 is provided near the light emitting devices 10 arranged in a matrix.
  • the external connection unit 60 is a part for connecting an electrical device to the outside.
  • the external connection unit 60 and the light emitting device 10 located next to the external connection unit 60 are connected to each other through the wire 30.
  • each of the plurality of light emitting devices 10 is electrically connected to the light emitting device 10 located adjacent thereto via a wire 30. Therefore, the light emitting device 10 that is not located next to the external connection unit 60 among the plurality of light emitting devices 10 can be electrically connected to the external connection unit 60 via the other light emitting devices 10.
  • the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.
  • One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.
  • the width of the portion of the edge of the light emitting device 10 that does not become the light emitting region can be narrowed, even if a plurality of light emitting devices 10 emit light simultaneously, the boundaries of the light emitting devices 10 are not noticeable. Therefore, one image can be displayed using the plurality of light emitting devices 10.
  • FIG. 13 is a cross-sectional view illustrating the configuration of the electrical device according to the fifth embodiment.
  • the electric apparatus according to the present embodiment has a liquid crystal display unit.
  • a liquid crystal layer 52 is provided between a transparent substrate 54 and a transparent substrate 56, and the liquid crystal layer 52 is sealed with a sealing layer 57.
  • the opening 212 is provided in the oxide film formed on the conductor 20 or the protective film (coating film) that protects the conductor 20, one end 32 of the wire 30 is connected to the conductor 20. Can do. One end 32 of the wire 30 covers the opening 212.
  • the oxide film described above is a metal oxide film such as aluminum oxide when the conductor 20 is formed of a metal material such as Al.
  • the protective film described above is formed of an inorganic material such as Ni, Mo, or Nb. Examples of protective films include a single layer made of Ni and Mo material, a single layer made of Mo and Ni, a single layer made of Ni and Nb material, and a single layer made of Mo and Nb material. It may be a single layer or a laminate in which two or more of these single layers are laminated. You may make it function as a protective film and may provide other functions, such as covering the conductor 20.
  • FIG. The illustration of the oxide film, protective film, and opening 212 is omitted.
  • An electrical component 70 is mounted on the transparent substrate 54.
  • the electrical component 70 is a control IC for the liquid crystal display unit.
  • the electrical component 70 is connected to a wiring (conductor 20) provided on the transparent substrate 54.
  • the end portion of the first conductor 20 is connected to the external connection terminal 72 through the wire 30.
  • the electrical component 70 and the wire 30 are sealed with a sealing resin 58. In plan view, the end of the external connection terminal 72 is located outside the sealing resin 58.
  • the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.
  • One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Cette invention concerne une structure de connexion par câble dans laquelle au moins une première surface d'un substrat (100) est constituée d'un matériau isolant. Un conducteur (20) est formé sur la première surface. Le conducteur (20) est couvert d'un film d'encapsulation (210). Ledit film d'encapsulation (210) est, par exemple, un film d'oxyde d'aluminium. Une ouverture (212) est ménagée dans le film d'encapsulation (210). L'ouverture (212) est disposée au-dessus d'une partie (par exemple, une extrémité) du conducteur (20) vu en plan. Un câble (30) est relié au conducteur (20). Ledit câble (30) est relié au conducteur (20) par insertion d'une extrémité (32) dudit câble (30) à travers l'ouverture (212).
PCT/JP2013/059827 2013-04-01 2013-04-01 Structure de connexion par câble et dispositif électrique Ceased WO2014162387A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/059827 WO2014162387A1 (fr) 2013-04-01 2013-04-01 Structure de connexion par câble et dispositif électrique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/059827 WO2014162387A1 (fr) 2013-04-01 2013-04-01 Structure de connexion par câble et dispositif électrique

Publications (1)

Publication Number Publication Date
WO2014162387A1 true WO2014162387A1 (fr) 2014-10-09

Family

ID=51657721

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/059827 Ceased WO2014162387A1 (fr) 2013-04-01 2013-04-01 Structure de connexion par câble et dispositif électrique

Country Status (1)

Country Link
WO (1) WO2014162387A1 (fr)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5197371A (fr) * 1975-02-24 1976-08-26
JPS5663061U (fr) * 1979-10-19 1981-05-27
JPS57138165A (en) * 1981-02-20 1982-08-26 Nec Corp Manufacture of semiconductor device
JPS5918862B1 (fr) * 1974-04-08 1984-05-01 Tokyo Shibaura Electric Co
JPS59208767A (ja) * 1983-05-13 1984-11-27 Hitachi Ltd 半導体装置
JPS60140833A (ja) * 1983-12-28 1985-07-25 Nec Corp 半導体装置
JPS60186030A (ja) * 1984-03-05 1985-09-21 Fujitsu Ltd ボンデイング方法
JPH03116941A (ja) * 1989-09-29 1991-05-17 Fujitsu Ltd 半導体装置の製造方法
JPH04119639A (ja) * 1990-09-10 1992-04-21 Hitachi Ltd 半導体装置
JP2009272494A (ja) * 2008-05-08 2009-11-19 Alps Electric Co Ltd 電子デバイス及びその製造方法、ならびに、前記電子デバイスを用いた接続構造体及びその製造方法
JP2010039211A (ja) * 2008-08-05 2010-02-18 Fujitsu Ltd 表示装置及びその製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918862B1 (fr) * 1974-04-08 1984-05-01 Tokyo Shibaura Electric Co
JPS5197371A (fr) * 1975-02-24 1976-08-26
JPS5663061U (fr) * 1979-10-19 1981-05-27
JPS57138165A (en) * 1981-02-20 1982-08-26 Nec Corp Manufacture of semiconductor device
JPS59208767A (ja) * 1983-05-13 1984-11-27 Hitachi Ltd 半導体装置
JPS60140833A (ja) * 1983-12-28 1985-07-25 Nec Corp 半導体装置
JPS60186030A (ja) * 1984-03-05 1985-09-21 Fujitsu Ltd ボンデイング方法
JPH03116941A (ja) * 1989-09-29 1991-05-17 Fujitsu Ltd 半導体装置の製造方法
JPH04119639A (ja) * 1990-09-10 1992-04-21 Hitachi Ltd 半導体装置
JP2009272494A (ja) * 2008-05-08 2009-11-19 Alps Electric Co Ltd 電子デバイス及びその製造方法、ならびに、前記電子デバイスを用いた接続構造体及びその製造方法
JP2010039211A (ja) * 2008-08-05 2010-02-18 Fujitsu Ltd 表示装置及びその製造方法

Similar Documents

Publication Publication Date Title
US11164928B2 (en) Flexible organic electroluminescent device and method for fabricating the same
JP6189692B2 (ja) Ｏｌｅｄ表示パネル
WO2014162395A1 (fr) Dispositif électroluminescent
JP6207928B2 (ja) 発光装置の製造方法
JP6404361B2 (ja) 発光装置
JP6463354B2 (ja) 発光装置
JP6093439B2 (ja) 電気機器及び電気部品の接続構造
WO2014162387A1 (fr) Structure de connexion par câble et dispositif électrique
JP6164982B2 (ja) 発光装置
WO2014162802A1 (fr) Dispositif optique
WO2014162453A1 (fr) Structure de liaison, et dispositif luminescent
WO2014162386A1 (fr) Structure de connexion par câble et dispositif électrique
JP6294071B2 (ja) 発光装置
JP6302683B2 (ja) 発光装置
JP6441595B2 (ja) 発光装置
JP2014203525A (ja) 接合構造および発光装置
JP2016192342A (ja) 発光装置
JP6371532B2 (ja) 発光装置
WO2014162934A1 (fr) Dispositif optique
JP2017107873A (ja) 発光装置
JP2017191784A (ja) 発光装置
JPWO2014141463A1 (ja) 発光装置及び発光装置の検査方法
WO2017122360A1 (fr) Dispositif électroluminescent
WO2014162449A1 (fr) Structure de jonction et dispositif électroluminescent
KR20070051621A (ko) 오엘이디 디스플레이 소자

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13881126

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13881126

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP