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WO2014162449A1 - Structure de jonction et dispositif électroluminescent - Google Patents

Structure de jonction et dispositif électroluminescent Download PDF

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Publication number
WO2014162449A1
WO2014162449A1 PCT/JP2013/059927 JP2013059927W WO2014162449A1 WO 2014162449 A1 WO2014162449 A1 WO 2014162449A1 JP 2013059927 W JP2013059927 W JP 2013059927W WO 2014162449 A1 WO2014162449 A1 WO 2014162449A1
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WO
WIPO (PCT)
Prior art keywords
conductive film
electrode
wiring
conductive
buffer member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/059927
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English (en)
Japanese (ja)
Inventor
雄司 齋藤
正宣 赤木
博樹 丹
賢一 奥山
邦彦 白幡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku Pioneer Corp
Pioneer Corp
Original Assignee
Tohoku Pioneer Corp
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Pioneer Corp, Pioneer Corp filed Critical Tohoku Pioneer Corp
Priority to PCT/JP2013/059927 priority Critical patent/WO2014162449A1/fr
Publication of WO2014162449A1 publication Critical patent/WO2014162449A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/179—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines

Definitions

  • the present invention relates to a junction structure and a light emitting device.
  • organic EL Organic Electroluminescence
  • An organic EL element is comprised by the transparent electrode, the other electrode arrange
  • Examples of the technology related to the organic EL element include those described in Patent Document 1 and Patent Document 2.
  • Patent Document 1 includes a first conductive film formed by forming a metal wiring in a pattern, and a second conductive film containing a conductive polymer that continuously covers the first conductive film and the transparent substrate. A transparent electrode is described.
  • Patent Document 2 describes a light-emitting element having an electrode composed of a metal line formed in a line shape and a polymer line covering the upper surface and side surfaces of the metal line.
  • connection failure may occur at the joint and its peripheral part. In this case, the connection reliability between the two conductive films joined to each other may be reduced.
  • An example of a problem to be solved by the present invention is to improve connection reliability between two conductive films joined to each other.
  • the first conductive film has a bonding structure that covers a part of the second conductive film and the buffer member.
  • the invention according to claim 9 is: A light-emitting device having the junction structure according to any one of claims 1 to 6, An organic EL element having a first electrode, a second electrode, and an organic layer disposed between the first electrode and the second electrode; A first wiring electrically connected to the first electrode and configured by the first conductive film; A lead wire joined to the first wire and made of the second conductive film; It is a light-emitting device provided with.
  • the invention according to claim 10 is: A light-emitting device having the junction structure according to any one of claims 1 to 6, An organic EL element comprising: a first electrode composed of the first conductive film; a second electrode; and an organic layer disposed between the first electrode and the second electrode; A lead wire bonded to the first electrode and configured by the second conductive film; It is a light-emitting device provided with.
  • FIG. 2 is a cross-sectional view showing an AA cross section of FIG. 1.
  • FIG. 2 is a cross-sectional view showing a BB cross section of FIG. 1.
  • It is a figure which shows a part of light-emitting device shown in FIG. It is a figure which shows a part of light-emitting device shown in FIG.
  • junction structure comprised by the 1st electrically conductive film and 1st electrically conductive film in 1st Embodiment. It is a figure which shows an example of the junction structure comprised by the 1st electrically conductive film and 1st electrically conductive film in 1st Embodiment. It is a figure which shows an example of the junction structure comprised by the 1st electrically conductive film and 1st electrically conductive film in 1st Embodiment. It is a figure which shows the modification of the junction structure comprised by the 1st electrically conductive film and 1st electrically conductive film in 1st Embodiment.
  • FIG. 12 is a cross-sectional view showing a CC cross section of FIG. 11.
  • FIG. 12 is a cross-sectional view showing a DD cross section of FIG. 11. It is a figure which shows a part of light-emitting device shown in FIG.
  • FIG. 1 is a plan view showing a light emitting device 10 according to the first embodiment.
  • 2 is a cross-sectional view showing the AA cross section of FIG. 1
  • FIG. 3 is a cross-sectional view showing the BB cross section of FIG. 4 and 5 are views showing a part of the light emitting device 10 shown in FIG.
  • FIG. 4 shows the positional relationship between the first conductive film 110 and the second conductive film 130.
  • FIG. 5 shows the configuration of the insulating layer 120.
  • FIGS. 6 to 9 are views showing an example of the bonding structure 200 constituted by the first conductive film 110 and the second conductive film 130 in the present embodiment.
  • FIG. 10 is a view showing a modified example of the bonding structure 200 constituted by the first conductive film 110 and the second conductive film 130 in the present embodiment.
  • the first conductive film 110 made of a conductive material and the second conductive film 130 made of a metal material, which are provided on the substrate 100, are bonded to each other. Become. In the peripheral region of the second conductive film 130 on the substrate 100, one or more buffer members 202 made of a material different from the conductive material forming the first conductive film 110 are provided. The first conductive film 110 covers a part of the second conductive film 130 and the buffer member 202.
  • the light emitting device 10 has a joint structure 200.
  • the light emitting device 10 includes an organic EL element 20, a first wiring 114, and a lead wiring 134.
  • the organic EL element 20 includes a first electrode 112, a second electrode 152, and an organic layer 140 disposed between the first electrode 112 and the second electrode 152.
  • the first wiring 114 is electrically connected to the first electrode 112 and is configured by the first conductive film 110.
  • the lead wiring 134 is joined to the first wiring 114 and is configured by the second conductive film 130.
  • the bonding structure 200 is a bonding structure in which the first conductive film 110 and the second conductive film 130 are bonded to each other.
  • the bonding between the first conductive film 110 and the second conductive film 130 includes a case where another structure is interposed between the first conductive film 110 and the second conductive film 130.
  • the bonding structure 200 is formed on the substrate 100, for example. In this case, the first conductive film 110 and the second conductive film 130 are formed on the substrate 100.
  • the junction structure 200 constitutes a light emitting device including, for example, an organic EL element.
  • the light emitting device includes, for example, an organic EL element, a first wiring that is electrically connected to an electrode that constitutes the organic EL element, and a lead wiring that is electrically connected to the first wiring.
  • an electrical signal for controlling light emission / non-light emission from the outside is supplied to the electrodes constituting the organic EL element via the lead wiring and the first wiring.
  • the 1st electrically conductive film 110 among the joining structures 200 comprises the 1st wiring connected to the electrode which comprises an organic EL element, for example.
  • the second conductive film 130 of the bonding structure 200 constitutes, for example, a lead wiring. In this case, the junction structure 200 is formed between the first wiring and the lead-out wiring.
  • the first conductive film 110 is configured to substantially include a conductive material.
  • the conductive material constituting the first conductive film 110 include a transparent conductive material or a paste-like conductive material such as silver. Among these, a transparent conductive material is particularly preferable.
  • the first conductive film 110 is made of a transparent conductive material, the first conductive film 110 is a conductive film having transparency.
  • the first conductive film 110 has a shape extending in one direction parallel to the plane of the substrate 100, for example.
  • the transparent conductive material includes, for example, an inorganic material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), or a conductive polymer.
  • the transparent conductive material includes a conductive polymer
  • the first conductive film 110 can be formed using a coating method. In this case, in the step of forming the first conductive film 110, it is possible to suppress a thermal load from being applied to other components such as the substrate 100.
  • the first conductive film 110 is preferably a coating-type conductive film formed by applying a solution in which this inorganic material is dispersed in an organic solvent. . Even in such a case, the first conductive film 110 can be formed by a coating method.
  • the conductive polymer included in the transparent conductive material constituting the first conductive film 110 is a conductive polymer including, for example, a ⁇ -conjugated conductive polymer and a polyanion.
  • the ⁇ -conjugated conductive polymer is not particularly limited.
  • a chain conductive polymer of phenylenes, polyparaphenylene sulfides, polyisothianaphthenes, or polythiazyl compounds can be used. From the viewpoint of conductivity, transparency, stability, etc., polythiophenes or polyanilines are preferable, and polyethylene dioxythiophene is particularly preferable.
  • Polyanions include polyvinyl sulfonic acid, polystyrene sulfonic acid, polyallyl sulfonic acid, polyacrylic acid ethyl sulfonic acid, polyacrylic acid butyl sulfonic acid, poly-2-acrylamido-2-methylpropane sulfonic acid, polyisoprene sulfonic acid, polyvinyl Carboxylic acid, polystyrene carboxylic acid, polyallyl carboxylic acid, polyacryl carboxylic acid, polymethacryl carboxylic acid, poly-2-acrylamido-2-methylpropane carboxylic acid, polyisoprene carboxylic acid, or polyacrylic acid can be used.
  • the polyanion used in the present embodiment may be a homopolymer of these or two or more kinds of copolymers.
  • the transparent conductive material may further include a crosslinking agent, a leveling agent, an antifoaming agent, or the like.
  • the second conductive film 130 includes a metal material.
  • a metal material having a lower electrical resistivity than the conductive material constituting the first conductive film 110 is used.
  • the first conductive film 110 and the second conductive film 130 are made of different materials.
  • the metal material constituting the second conductive film 130 include Ag, Al, Cr, Mo, Ni, Nb, Ti, W, Au, Pt, Cu, and Pd.
  • the 2nd electrically conductive film 130 is comprised by 1 type, or 2 or more types of these.
  • one or a plurality of buffer members 202 are provided in the peripheral region of the second conductive film 130 on the substrate 100.
  • the buffer member 202 is provided at a position away from the second conductive film 130 so as not to directly contact the second conductive film 130.
  • the buffer member 202 is positioned in the first direction as viewed from the second conductive film 130, for example.
  • the plurality of buffer members 202 are provided on the substrate 100, the plurality of buffer members 202 are arranged in the first direction as viewed from the second conductive film 130, for example.
  • the buffer member 202 is made of a material different from the conductive material constituting the first conductive film 110.
  • the first conductive film 110 is provided so as to cover a part of the second conductive film 130 and the buffer member 202.
  • the second conductive film 130 has a part of the covering portion 220 covered with the first conductive film 110.
  • each buffer member 202 may be entirely covered with the first conductive film 110, or a part thereof may be covered with the first conductive film 110.
  • a part of the first conductive film 110 exists between the second conductive film 130 and the buffer member 202.
  • the plurality of buffer members 202 are provided on the substrate 100, for example, a part of the first conductive film 110 exists between the adjacent buffer members 202.
  • the first conductive film 110 is formed, for example, such that one end of the first conductive film 110 overlaps part of the second conductive film 130. At this time, a portion of the second conductive film 130 that overlaps the one end of the first conductive film 110 is covered with the first conductive film 110 to form the covering portion 220.
  • the first conductive film 110 extends in the first direction when viewed from the second conductive film 130. For this reason, the first conductive film 110 covers the buffer member 202 positioned in the first direction when viewed from the second conductive film 130.
  • the first direction refers to the Y direction in the figure, for example.
  • the present inventor has found that the conductive material constituting the first conductive film 110 receives a tension due to the surface tension acting on the second conductive film 130, whereby the thickness of the first conductive film 110 is partially reduced. I found out. Such a problem becomes particularly apparent when the film thickness of the second conductive film 130 is increased in order to reduce the wiring resistance in the second conductive film 130. This is presumably because the surface tension acting on the second conductive film 130 is increased by increasing the film thickness of the second conductive film 130. In this case, the wiring resistance in the first conductive film 110 increases, which may cause a connection failure between the first conductive film 110 and the second conductive film 130. As a result, the connection reliability between the two conductive films joined to each other decreases.
  • one or a plurality of buffer members 202 made of a material different from the conductive material constituting the first conductive film 110 are provided in the peripheral region of the second conductive film 130 on the substrate 100. ing.
  • the first conductive film 110 is provided so as to cover a part of the second conductive film 130 and the buffer member 202.
  • the buffer member 202 can relieve the tension that the conductive material constituting the first conductive film 110 receives from the second conductive film 130. Therefore, connection failure between the first conductive film and the second conductive film can be suppressed, and connection reliability between the two conductive films joined to each other can be improved.
  • the buffer member 202 is made of, for example, a metal material or an insulating material.
  • a metal material it is possible to suppress a decrease in wiring resistance in the joint structure 200.
  • the buffer member 202 is made of an insulating material, the buffer member 202 can be easily formed using a lithography method or the like.
  • the metal material constituting the buffer member 202 include Ag, Al, Cr, Mo, Ni, Nb, Ti, W, Au, Pt, Cu, and Pd.
  • the insulating material constituting the buffer member 202 examples include those made of organic materials such as polyimide, epoxy, and acrylic, and those made of inorganic oxides and inorganic nitrides such as SiO 2 , SiN, MgO, Al 3 O 2 , and TiO 2. Alternatively, the same material as the insulating film 120 described later can be used.
  • the buffer member 202 is made of a metal material, for example, the buffer member 202 and the second conductive film 130 can be made of the same metal material.
  • the buffer member 202 is provided in the peripheral region of the second conductive film 130.
  • the peripheral region of the second conductive film 130 refers to, for example, a region on the substrate 100 located within a certain length from the second conductive film 130 in the first direction.
  • the film thickness of the second conductive film 130 is D1
  • the length of the region sandwiched between the second conductive film 130 and the buffer member 202 is L1.
  • the length L1 preferably satisfies 0.5 ⁇ D1 ⁇ L1 ⁇ 5 ⁇ D1.
  • the conductive material constituting the first conductive film 110 is separated from the second conductive film 130 in the region located between the second conductive film 130 and the buffer member 202. It can suppress that the film thickness of the 1st electrically conductive film 110 receives a tension
  • the buffer member 202 farthest from the second conductive film 130 has a smaller film thickness than the second conductive film 130.
  • the tension that the conductive material constituting the first conductive film 110 receives from the buffer member 202 having a film thickness smaller than that of the second conductive film 130 is that the conductive material constituting the first conductive film 110 is the second conductive film. Less than the tension received from 130. Therefore, the buffer member 202 can relieve the tension that the conductive material constituting the first conductive film 110 receives from the second conductive film 130.
  • the film thickness of the buffer member 202 is made smaller than the film thickness of the second conductive film 130.
  • the thickness of all the buffer members 202 be smaller than the thickness of the second conductive film 130.
  • the tension applied to the first conductive film 110 from the second conductive film 130 can be effectively relaxed.
  • the film thickness of only a part of the buffer members 202 including the buffer member 202 located farthest from the second conductive film 130 is set to the film thickness of the second conductive film 130. It may be smaller than the thickness.
  • the film thickness of the second conductive film 130 is D1
  • the film thickness of the buffer member 202 is D2.
  • the film thickness D2 of at least the buffer member 202 farthest from the second conductive film 130 satisfies 0.2 ⁇ D1 ⁇ D2 ⁇ 0.9 ⁇ D1.
  • FIG. 6 to 9 are diagrams illustrating an example of the bonding structure 200.
  • FIG. 6 and 7 exemplify the case where only one buffer member 202 is provided on the substrate 100.
  • 6 is an example of a cross-sectional structure
  • FIG. 7 is an example of a planar structure.
  • the film thickness of the first conductive film 110 has a gradient that decreases from the second conductive film 130 toward the buffer member 202.
  • the upper surface of the first conductive film 110 has an inclined surface that becomes lower at a distance from the second conductive film 130 at least in a region overlapping with the buffer member 202.
  • Such a configuration is realized by relaxing the tension received by the conductive material constituting the first conductive film 110 by the buffer member 202.
  • the second conductive film 130 has a wiring shape extending in the first direction.
  • the width of the buffer member 202 in the second direction can be made smaller than the width of the second conductive film 130 in the second direction.
  • the second direction refers to a direction orthogonal to the first direction in a plane parallel to the plane of the substrate 100.
  • the width of the buffer member 202 in the second direction may be equal to the width of the second conductive film 130 in the second direction, or may be larger than the width of the second conductive film 130 in the second direction.
  • FIG. 8 and 9 exemplify a case where a plurality of buffer members 202 are provided on the substrate 100.
  • FIG. 9 is an example of a planar structure.
  • a plurality of buffer members 202 arranged so that the film thickness decreases as the distance from the second conductive film 130 increases on the substrate 100. That is, the buffer member 202 farthest from the second conductive film 130 among the plurality of buffer members 202 has the smallest film thickness in the plurality of buffer members 202.
  • the plurality of buffer members 202 have different film thicknesses, for example.
  • the tension received by the conductive material constituting the first conductive film 110 gradually decreases as the distance from the second conductive film 130 increases.
  • the tension applied to the conductive material constituting the first conductive film 110 can be more effectively relaxed by the plurality of buffer members 202.
  • the film thickness of the first conductive film 110 has a gradient that decreases from the second conductive film 130 toward the buffer member 202.
  • the upper surface of the first conductive film 110 has an inclined surface that becomes lower as the distance from the second conductive film 130 increases, at least in a portion overlapping the plurality of buffer members 202.
  • Such a configuration is realized by relaxing the tension received by the conductive material constituting the first conductive film 110 by the plurality of buffer members 202.
  • the second conductive film 130 has a wiring shape extending in the first direction.
  • the width of the plurality of buffer members 202 in the second direction can be made smaller than the width of the second conductive film 130 in the second direction.
  • the plurality of buffer members 202 may be arranged so that the width decreases as the distance from the second conductive film 130 increases.
  • the width of the plurality of buffer members 202 in the second direction may be equal to the width of the second conductive film 130 in the second direction, or may be larger than the width of the second conductive film 130 in the second direction.
  • the buffer member 202 has a surface tension smaller than that of the second conductive film 130, for example.
  • the tension that the conductive material constituting the first conductive film 110 receives from the buffer member 202 is smaller than the tension that the conductive material receives from the second conductive film 130. Therefore, the buffer member 202 can relieve the tension that the conductive material constituting the first conductive film 110 receives from the second conductive film 130.
  • the buffer member 202 is made of a material having a surface tension smaller than that of the second conductive film 130 so that the surface tension acting on the buffer member 202 is smaller than the surface tension acting on the second conductive film 130. be able to. Further, the surface tension acting on the buffer member 202 may be made smaller than the surface tension acting on the second conductive film 130 by performing a surface treatment for reducing the surface tension on the buffer member 202.
  • the film thickness of the buffer member 202 is not particularly limited, and may be equal to the film thickness of the second conductive film 130 or may be smaller or larger than the film thickness of the second conductive film 130.
  • FIG. 10 is a diagram illustrating a modified example of the bonding structure 200.
  • FIG. 10 illustrates a case where only one buffer member 202 is provided on the substrate 100.
  • a plurality of buffer members 202 may be provided on the substrate 100.
  • the buffer member 202 having a surface tension smaller than that of the second conductive film 130 is disposed as the buffer member 202 farthest from the second conductive film 130 among the plurality of buffer members 202.
  • the buffer member 202 other than the buffer member 202 farthest from the second conductive film 130 is also preferably the buffer member 202 having a surface tension smaller than that of the second conductive film 130.
  • the bonding structure 200 in which the first conductive film 110 and the second conductive film 130 are bonded to each other is formed as follows.
  • the second conductive film 130 is formed over the substrate 100.
  • the second conductive film 130 is formed using, for example, a coating method, a sputtering method, or a vapor deposition method.
  • a coating method used in the said process For example, the inkjet method, the screen printing method, the spray coating method, or the dispenser coating method is mentioned.
  • coating method contains binder resin and an organic solvent, for example.
  • the binder resin for example, a cellulose resin, an epoxy resin, or an acrylic resin can be used.
  • the organic solvent for example, a hydrocarbon solvent or an alcohol solvent can be used.
  • the metal particles contained in the coating liquid are, for example, Ag, Al, Cr, Mo, Ni, Nb, Ti, W, Au, Pt, Cu, or Pd.
  • one or more buffer members 202 are formed in the peripheral region of the second conductive film 130 on the substrate 100.
  • the buffer member 202 is formed using, for example, a coating method.
  • the buffer member 202 is formed, for example, by applying an insulating resin on the substrate 100 and drying it.
  • the buffer member 202 may be formed by applying an insulating resin containing a photosensitive resin over the substrate 100 to form an insulating film, and then patterning the insulating film by a photolithography method.
  • the buffer member 202 is made of a metal material
  • the buffer member 202 is formed using, for example, a coating method.
  • the coating method used in this case is not particularly limited, but for example, an ink jet method or a similar technique can be used.
  • the coating solution contains metal particles made of, for example, Ag, Al, Cr, Mo, Ni, Nb, Ti, W, Au, Pt, Cu, or Pd.
  • the coating solution may further contain a binder resin and an organic solvent.
  • the second conductive film 130 and the buffer member 202 may be formed at the same time by etching a metal film formed on the substrate 100.
  • the buffer member 202 is further etched in a state where the second conductive film 130 is masked.
  • the film thickness of the buffer member 202 can be made smaller than that of the second conductive film 130.
  • the method may further include a step of etching another buffer member 202 in a state where the second conductive film 130 and a part of the buffer members 202 are masked. Thereby, the film thickness of the buffer member 202 located farthest from the second conductive film 130 among the plurality of buffer members 202 can be minimized.
  • a first conductive film 110 is formed over the substrate 100.
  • the first conductive film 110 is formed, for example, by applying a transparent conductive material-containing coating solution on the substrate 100 and drying it.
  • the first conductive film 110 is formed so as to cover a part of the second conductive film 130 and the buffer member 202, for example.
  • the first conductive film 110 is formed so as to cover a part of the second conductive film 130 and the plurality of buffer members 202.
  • the transparent conductive material-containing coating solution is not particularly limited, but is applied onto the substrate 100 using, for example, an ink jet method, a screen printing method, a relief printing method, a gravure printing method, a die coat, a spin coat, or a spray.
  • the transparent conductive material-containing coating solution used in the step of forming the first conductive film 110 includes, for example, an organic solvent and water in addition to the above-described transparent conductive material.
  • the organic solvent for example, an alcohol solvent can be used.
  • the first conductive film 110 may be formed by applying a paste-like conductive material such as silver on the substrate 100 and drying it. In the present embodiment, the joining structure 200 is formed in this way.
  • the light emitting device 10 may be a lighting device.
  • the light-emitting device 10 is an illumination device
  • the light-emitting device 10 has a configuration in which, for example, a plurality of linear organic layers 140 having different emission colors are arranged repeatedly. Thereby, the illuminating device excellent in color rendering properties is realized.
  • the light-emitting device 10 that is a lighting device may have a planar organic layer 140.
  • the substrate 100 is, for example, a transparent substrate.
  • the substrate 100 can be a glass substrate. Thereby, the light emitting device 10 having excellent heat resistance and the like can be manufactured at low cost.
  • the substrate 100 may be a film-like substrate made of a resin material.
  • a display with particularly high flexibility can be realized.
  • the resin material constituting the film substrate include polyethylene terephthalate, polyethylene naphthalate, and polycarbonate.
  • the light emitting device 10 that is a display has a plurality of organic EL elements 20 arranged in an array on the substrate 100, for example.
  • the organic EL element 20 includes a first electrode 112 provided on the substrate 100, an organic layer 140 provided on the first electrode 112, and a second electrode 152 provided on the organic layer 140. ing. At this time, the organic layer 140 is disposed between the first electrode 112 and the second electrode 152.
  • a plurality of first electrodes 112 extending in the Y direction in the drawing and a plurality of second electrodes 152 extending in the X direction in the drawing are provided on the substrate.
  • the organic EL element 20 is formed in each portion where the first electrode 112 and the second electrode 152 overlap each other in plan view. As a result, a plurality of organic EL elements 20 arranged in an array are formed on the substrate 100.
  • the first electrode 112 serves as an anode of an organic EL element, for example.
  • the first electrode 112 is, for example, a transparent electrode that is transparent or translucent to the wavelength of light emitted from the light emitting layer 144 of the organic layer 140 described later.
  • the first electrode 112 is provided, for example, on the substrate 100 and in the pixel region 300 so as to extend linearly in the Y direction in the drawing.
  • On the substrate 100 for example, a plurality of first electrodes 112 that are separated from each other are arranged in a direction (X direction in the drawing) perpendicular to the extending direction of the first electrodes 112. At this time, the plurality of first electrodes 112 are separated from each other, for example.
  • the pixel region 300 is a region including a plurality of organic EL elements 20. In the example illustrated in FIG. 4, a region surrounded by a one-dot chain line corresponds to the pixel region 300.
  • the first electrode 112 is made of, for example, a transparent conductive material.
  • the transparent conductive material constituting the first electrode 112 for example, the same transparent conductive material as that constituting the first conductive film 110 can be used. For this reason, the 1st electrode 112 can have transparency.
  • the first wiring 114 is provided on the substrate 100.
  • the case where the 1st wiring 114 is electrically connected with the 1st electrode 112 is illustrated.
  • a plurality of first wirings 114 connected to different first electrodes 112 are provided on the substrate 100.
  • the plurality of first electrodes 112 in the present embodiment are connected to the lead-out wiring 134 via the first wiring 114, respectively.
  • the first wiring 114 is constituted by the first conductive film 110 made of a conductive material.
  • the first wiring 114 formed of the first conductive film 110 can have transparency.
  • the first electrode 112 and the first wiring 114 are provided integrally on the substrate 100, for example.
  • the first wiring 114 and the first electrode 112 are constituted by the first conductive film 110, for example.
  • a portion of the first conductive film 110 located in the pixel region 300 including the plurality of organic EL elements 20 becomes the first electrode 112.
  • a portion of the first conductive film 110 located outside the pixel region 300 becomes the first wiring 114.
  • the first electrode 112 is connected to the lead wiring 134 through the first wiring 114.
  • a plurality of first conductive films 110 extending in the Y direction in the drawing are provided on the substrate 100.
  • the plurality of first conductive films 110 are arranged in the X direction in the drawing so as to be separated from each other. A portion of the first conductive film 110 located on the end side connected to the extraction wiring 134 from the pixel region 300 indicated by the alternate long and short dash line is the first wiring 114.
  • a lead wiring 134 is provided on the substrate 100 .
  • the lead wiring 134 is connected to the first wiring 114 .
  • a plurality of lead wires 134 arranged in the X direction in the figure are provided on the substrate 100 so as to be separated from each other.
  • Each lead-out wiring 134 is connected to the first wiring 114.
  • the plurality of first wires 114 are connected to the outside via the lead wires 134, respectively.
  • a light emission / non-light emission signal is supplied to the organic EL element 20 via the first wiring 114 and the lead-out wiring 134.
  • the lead-out wiring 134 is comprised by the 2nd electrically conductive film 130 comprised with a metal material. Therefore, when the lead wiring 134 is connected to the first wiring 114, the first wiring 114 configured by the first conductive film 110 and the lead wiring 134 configured by the second conductive film 130 are bonded to each other. Thus, the joint structure 200 is formed. In the example illustrated in FIG. 4, the joint structure 200 is formed in a portion surrounded by a broken line.
  • the buffer member 202 is formed on the substrate 100 in the peripheral region of the lead wiring 134. The first wiring 114 is formed so as to cover a part of the lead wiring 134 and the buffer member 202.
  • the first wiring 114 is connected to the lead wiring 134 at one end. At this time, the first wiring 114 is bonded to, for example, the lead wiring 134 at the one end portion to form the bonding structure 200.
  • the first wiring 114 extends in the first direction when viewed from the lead wiring 134. In the present embodiment, the first direction refers to the Y direction in the figure, for example.
  • An insulating layer 120 is provided on the substrate 100 so as to cover the first electrode 112, for example.
  • the insulating layer 120 is provided so as to cover the first electrode 112 and the first wiring 114 and a part of each of the extraction wiring 164 described later.
  • the insulating layer 120 is a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by exposure and development.
  • the insulating layer 120 may be made of a resin material other than polyimide resin, and may be epoxy resin or acrylic resin.
  • the insulating layer 120 is provided with a plurality of first openings 122, for example.
  • the first openings 122 are formed so as to form a matrix, for example.
  • the plurality of first openings 122 are formed so as to be located on the first electrode 112.
  • the plurality of first openings 122 are provided at positions overlapping the second electrode 152 extending in a direction orthogonal to the first electrode 112 (X direction in the figure), for example. For this reason, the plurality of first openings 122 are arranged to form a matrix.
  • the insulating layer 120 is provided with a plurality of second openings 124, for example. As shown in FIG. 5, the second opening 124 is provided, for example, so as to be located on the lead wiring 164.
  • the plurality of second openings 124 are arranged along one side of the matrix formed by the first openings 122. When viewed in a direction along this one side (for example, Y direction in the figure), the second openings 124 are arranged at the same interval as the first openings 122.
  • a partition wall 170 is provided on the insulating layer 120. As shown in FIG. 1, the partition 170 is provided so as to extend in the X direction in the drawing. That is, the partition 170 is formed along the extending direction of the second electrode 152. A plurality of partition walls 170 are provided so as to be arranged in the Y direction in the drawing.
  • the partition wall 170 is, for example, a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed.
  • the partition wall 170 may be made of a resin material other than a polyimide resin, or may be an epoxy resin or an acrylic resin.
  • the partition wall 170 has, for example, a trapezoidal cross-sectional shape (reverse trapezoidal shape). That is, the width of the upper surface of the partition wall 170 is larger than the width of the bottom surface of the partition wall 170, for example. In this case, even when the plurality of second electrodes 152 are collectively formed by a sputtering method, a vapor deposition method, or the like, the plurality of second electrodes 152 positioned between the adjacent partition walls 170 can be separated from each other. It becomes. Therefore, the second electrode 152 can be easily formed.
  • the planar shape of the partition wall 170 is not limited to that shown in FIG. Therefore, by changing the planar shape of the partition 170, the planar pattern of the plurality of second electrodes 152 that are separated from each other by the partition 170 can be freely changed.
  • an organic layer 140 is formed in the first opening 122.
  • the organic layer 140 is configured by a stacked body in which, for example, a hole injection layer 142, a light emitting layer 144, and an electron injection layer 146 are sequentially stacked.
  • the hole injection layer 142 is in contact with the first electrode 112
  • the electron injection layer 146 is in contact with the second electrode 152.
  • the organic layer 140 is sandwiched between the first electrode 112 and the second electrode 152.
  • a hole transport layer may be formed between the hole injection layer 142 and the light emitting layer 144, or an electron transport layer may be formed between the light emitting layer 144 and the electron injection layer 146.
  • the organic layer 140 may not include the hole injection layer 142.
  • a partition 170 is provided on the insulating layer 120.
  • the organic layers 140 provided in each of a plurality of regions sandwiched between adjacent partition walls 170 are separated from each other in the Y direction in the drawing.
  • a laminated film made of the same material as the organic layer 140 is formed on the partition wall 170, for example.
  • each layer constituting the organic layer 140 is provided so as to be continuous between adjacent first openings 122 in the X direction in the drawing in which the partition 170 extends.
  • a second electrode 152 is provided on the organic layer 140.
  • the 2nd electrode 152 becomes a cathode of an organic EL element, for example.
  • the second electrode 152 is provided, for example, so as to extend linearly in the X direction in the drawing.
  • On the substrate 100 for example, a plurality of second electrodes 152 spaced apart from each other are arranged in a direction (Y direction in the drawing) perpendicular to the extending direction of the second electrodes 152.
  • the second electrode 152 is made of a metal material such as tin, magnesium, indium, calcium, aluminum, silver, or an alloy thereof. One of these materials may be used alone, or two or more arbitrary combinations may be used. Note that in the case where the second electrode 152 is a cathode, the second electrode 152 is preferably made of a conductive material having a work function smaller than that of the first electrode 112 that is an anode.
  • a second wiring 154 is provided on the substrate 100.
  • the second wiring 154 is connected to one of the first electrode 112 and the second electrode 152 that is not connected to the first wiring 114.
  • one of the first electrode 112 and the second electrode 152 that is connected to the second wiring 154 is connected to the outside via the second wiring 154.
  • a case where the second wiring 154 is provided on the organic layer 140 and connected to the second electrode 152 is exemplified.
  • a plurality of second wirings 154 connected to the different second electrodes 152 are provided on the organic layer 140.
  • the plurality of second electrodes 152 in the present embodiment are connected to the outside via the second wirings 154, respectively.
  • part of the second wiring 154 is embedded in the second opening 124, and part of the second wiring 154 is connected to an extraction wiring 164 described later.
  • the second wiring 154 is made of, for example, a metal material.
  • a metal material constituting the second wiring 154 for example, the same material as the second electrode 152 can be used.
  • the second electrode 152 and the second wiring 154 are provided integrally on the organic layer 140, for example, and constitute the conductive film 150.
  • a part of the conductive film 150 located in the pixel region 300 including the plurality of organic EL elements 20 becomes the second electrode 152.
  • a portion of the conductive film 150 located outside the pixel region 300 serves as the second wiring 154.
  • the second electrode 152 is connected to the lead wiring 164 via the second wiring 154, for example.
  • a region surrounded by a one-dot chain line corresponds to the pixel region 300.
  • a plurality of conductive films 150 extending in the X direction in the drawing are provided on the organic layer 140.
  • the plurality of conductive films 150 are arranged in the Y direction in the drawing so as to be separated from each other.
  • a portion located on the end side connected to the extraction wiring 164 with respect to the pixel region 300 becomes the second wiring 154.
  • the plurality of conductive films 150 are collectively formed on the organic layer 140 using, for example, a sputtering method or a vapor deposition method. Even in such a case, since the partition 170 is formed on the insulating layer 120 in this embodiment, the conductive film 150 provided in each of a plurality of regions sandwiched between adjacent partitions 170 is illustrated in the drawing. They are separated from each other in the Y direction. As a result, it is possible to form a plurality of conductive films 150 arranged in the Y direction in the drawing and extending in the X direction in the drawing so as to be separated from each other. At this time, a film made of the same material as the conductive film 150 is formed over the partition wall 170.
  • a lead wiring 164 is provided on the substrate 100.
  • the second wiring 154 is connected to the outside through the lead wiring 164. Therefore, the second electrode 152 is connected to the outside via the second wiring 154 and the lead wiring 164, and a signal is supplied.
  • the lead wiring 164 is made of, for example, a metal material.
  • the metal material constituting the lead wiring 164 for example, the same material as the lead wiring 134 can be used. In this case, the lead wiring 164 can be formed simultaneously with the lead wiring 134. For this reason, it can suppress that the manufacturing process number of the light-emitting device 10 increases.
  • the lead wiring 134 is formed on the substrate 100.
  • the lead wiring 134 is formed on the substrate 100 using, for example, a coating method, a sputtering method, or a vapor deposition method.
  • the lead wiring 134 is configured by the second conductive film 130.
  • the lead wiring 134 is formed using, for example, the above-described method for forming the second conductive film 130 and the material forming the second conductive film 130.
  • one or a plurality of buffer members 202 are formed in the peripheral region of the lead wiring 134 constituted by the second conductive film 130 by the method described above.
  • the lead wiring 164 is formed on the substrate 100 simultaneously with the step of forming the lead wiring 134.
  • the lead wiring 164 is formed by the same method and material as the lead wiring 134, for example.
  • the first wiring 114 is formed on the substrate 100.
  • the first wiring 114 is formed by, for example, applying a transparent conductive material-containing coating solution on the substrate 100 and drying it.
  • the first wiring 114 is the first conductive film 110.
  • the first wiring 114 is formed using, for example, the above-described method for forming the first conductive film 110 and the material constituting the first conductive film 110.
  • the first wiring 114 constituted by the first conductive film 110 and the lead wiring 134 constituted by the second conductive film 130 are bonded to each other to form the bonded structure 200.
  • the bonding structure 200 is formed using, for example, the method for forming the bonding structure 200 described above.
  • the first electrode 112 connected to the first wiring 114 is formed together with the first wiring 114.
  • the first electrode 112 is formed by the first conductive film 110 integrally with the first wiring 114, for example.
  • the first wiring 114 is dried.
  • the transparent conductive material includes a conductive polymer
  • the first wiring 114 is dried to increase the cohesive force of the conductive polymer, so that the first wiring 114 can be a strong film.
  • the first wiring 114 is cured by performing a heat treatment on the first wiring 114.
  • the transparent conductive material constituting the first wiring 114 includes a photosensitive material
  • the first wiring 114 may be cured by UV irradiation. The structure obtained at this stage is shown in FIG.
  • the insulating layer 120 is formed on the substrate 100, the first electrode 112, the first wiring 114, and the lead wiring 164.
  • the insulating layer 120 is patterned into a predetermined shape using dry etching or wet etching. As a result, a plurality of first openings 122 and a plurality of second openings 124 are formed in the insulating layer 120. At this time, the plurality of first openings 122 are formed, for example, such that a part of the first electrode 112 is exposed from each first opening 122.
  • a partition wall 170 is formed on the insulating layer 120.
  • the partition wall 170 is obtained by patterning an insulating film provided over the insulating layer 120 into a predetermined shape using dry etching or wet etching.
  • the cross-sectional shape of the partition wall 170 can be changed to an inverted trapezoid by adjusting the conditions during exposure and development. The structure obtained at this stage is shown in FIG.
  • a hole injection layer 142, a light emitting layer 144, and an electron injection layer 146 are sequentially formed in the first opening 122. These are formed using, for example, a coating method or a vapor deposition method. Thereby, the organic layer 140 is formed.
  • the conductive film 150 constituting the second electrode 152 and the second wiring 154 is formed on the organic layer 140.
  • the conductive film 150 is formed so that, for example, a part of the conductive film 150 is located in the second opening 124.
  • the conductive film 150 is formed using, for example, a vapor deposition method or a sputtering method.
  • the organic EL element 20 composed of the first electrode 112, the second electrode 152, and the organic layer 140 sandwiched therebetween is formed on the substrate 100.
  • the light emitting device 10 is formed in this way.
  • one or more buffer members 202 made of a material different from the conductive material constituting the first conductive film 110 are provided in the peripheral region of the second conductive film 130 on the substrate 100. Is provided.
  • the first conductive film 110 is provided so as to cover a part of the second conductive film 130 and the buffer member 202.
  • the buffer member 202 can relieve the tension that the conductive material constituting the first conductive film 110 receives from the second conductive film 130. Therefore, connection failure between the first conductive film and the second conductive film can be suppressed, and connection reliability between the two conductive films joined to each other can be improved.
  • a light emission including a first wiring 114 connected to the first electrode 112 configuring the organic EL element 20 and configured by the first conductive film 110 and an extraction wiring 134 configured by the second conductive film 130.
  • the device 10 can be realized. Thereby, the connection reliability between the 1st electrode 112 and the extraction wiring 134 can be improved. In addition, the operational reliability of the light emitting device 10 can be improved.
  • FIG. 11 is a plan view showing the light emitting device 12 according to the second embodiment, and corresponds to FIG. 1 according to the first embodiment.
  • 12 is a cross-sectional view taken along the line CC in FIG. 11
  • FIG. 13 is a cross-sectional view taken along the line DD in FIG. 12 and 13, the configuration of the buffer member 202 is omitted.
  • FIG. 14 is a view showing a part of the light emitting device 12 shown in FIG. FIG. 14 particularly shows the positional relationship between the first conductive film 110 and the second conductive film 130.
  • the first conductive film 110 in the bonding structure 200 constitutes an electrode constituting, for example, an organic EL element.
  • the second conductive film 130 forms, for example, a lead wiring that is electrically connected to an electrode that forms the organic EL element.
  • the junction structure 200 is formed between the electrode constituting the organic EL element and the lead wiring.
  • the electrodes constituting the organic EL element are formed so as to cover the buffer member 202 provided in the peripheral region of the lead wiring.
  • the light emitting device 12 has the same configuration as that of the light emitting device 10 according to the first embodiment, except for the configuration of the first electrode 112 and the lead wiring 134.
  • the light emitting device 12 has a joint structure 200.
  • the light emitting device 12 includes the organic EL element 20 and a lead wiring 134.
  • the organic EL element 20 includes a first electrode 112 configured by the first conductive film 110, a second electrode 152, and an organic layer 140 disposed between the first electrode 112 and the second electrode 152. is doing.
  • the lead wiring 134 is joined to the first electrode 112 and is constituted by the second conductive film 130.
  • the first electrodes 112 are arranged on the substrate 100 in the pixel region 300 in a matrix, for example.
  • the plurality of first electrodes 112 arranged in a matrix are separated from each other.
  • the pixel region 300 is a region including a plurality of organic EL elements 20. In the example illustrated in FIG. 11, the region surrounded by the alternate long and short dash line corresponds to the pixel region 300.
  • the first electrode 112 is composed of a first conductive film 110 composed of a conductive material. When the first conductive film 110 is made of a transparent conductive material, the first electrode 112 made of the first conductive film 110 can have transparency.
  • the first wiring 114 constituting the light emitting device 10 according to the first embodiment is not provided.
  • the lead-out wiring 134 extends in the Y direction in the figure.
  • a plurality of lead wires 134 arranged in the X direction in the figure are provided on the substrate 100 so as to be separated from each other.
  • Each lead-out wiring 134 is connected to a plurality of first electrodes 112 arranged in the Y direction. For this reason, the plurality of first electrodes 112 are each connected to the outside via the lead wiring 134.
  • a light emission / non-light emission signal is supplied to the organic EL element 20 through the lead wiring 134.
  • the lead-out wiring 134 is comprised by the 2nd electrically conductive film 130 comprised with a metal material.
  • the first electrode 112 configured by the first conductive film 110 and the lead-out wiring 134 configured by the second conductive film 130 are bonded to each other to form the bonded structure 200.
  • the joint structure 200 is formed in a portion surrounded by a broken line.
  • the buffer member 202 is formed on the substrate 100 in the peripheral region of the lead wiring 134.
  • the first electrode 112 is formed so as to cover a part of the lead wiring 134 and the buffer member 202.
  • the first electrode 112 is connected to the lead wiring 134 at one end. At this time, the first electrode 112 is bonded to, for example, the lead wiring 134 at the one end portion to form the bonded structure 200. As shown in FIG. 13, the portion of the lead-out wiring 134 that is joined to the first electrode 112 is located, for example, in a region where the organic EL element 20 is formed in plan view.
  • the first electrode 112 extends in the second direction when viewed from the lead wiring 134. In the present embodiment, the second direction refers to, for example, the X direction in the figure.
  • the shape of the first electrode 112 is not particularly limited and can be selected as appropriate in accordance with the design of the organic EL element 20. For example, it is rectangular.
  • the insulating layer 120 is formed so as to cover the lead wiring 134, for example.
  • the insulating layer 120 is provided so as to cover a part of each of the lead wiring 134 and the lead wiring 164.
  • a plurality of first openings 122 are formed in the insulating layer 120 so as to form a matrix, for example.
  • the first electrode 112 is formed in the first opening 122.
  • a plurality of first electrodes 112 arranged in a matrix on the substrate 100 are formed.
  • the plurality of first electrodes 112 are separated from each other by the insulating layer 120.
  • the first opening 122 is formed, for example, so as to overlap a part of the lead wiring 134 in a plan view. In this case, a part of the lead wiring 134 that overlaps the first opening 122 in plan view is connected to the first electrode 112 formed in the first opening 122.
  • the insulating layer 120 is made of the same material as that of the first embodiment, for example.
  • the partition 170, the organic layer 140, the second electrode 152, the second wiring 154, and the extraction wiring 164 in the present embodiment have the same configuration as that of the first embodiment, for example.
  • connection reliability between the first conductive film 110 and the second conductive film 130 can be improved as in the first embodiment.
  • the light emitting device 12 including the first electrode 112 configured by the first conductive film 110 and the lead-out wiring 134 configured by the second conductive film 130 can be realized. Thereby, the connection reliability between the 1st electrode 112 and the extraction wiring 134 can be improved. In addition, the operational reliability of the light emitting device can be improved.
  • Example 1 a metal film made of silver was formed on a glass substrate by a sputtering method. Next, this metal film was patterned into a line shape by dry etching to form a second conductive film and two buffer members. At this time, the two buffer members were formed in the peripheral region of the second conductive film on the substrate. Next, wet etching was performed on the two buffer members in a state where the second conductive film was masked with a photoresist. Next, wet etching was performed on the other buffer member in a state where the second conductive film and one buffer member adjacent to the second conductive film among the two buffer members were masked with a photoresist.
  • the transparent conductive material-containing coating solution was applied by an inkjet method so as to cover a part of the second conductive film and the two buffer members, and dried to form a first conductive film.
  • a solution obtained by dispersing poly (3,4-ethylenedioxythiophene) / polystyrene sulfonate (PEDOT-PSS, CLEVIOS PH510 (manufactured by Heraeus)) in a solvent was used. Thereby, the structure which consists of a 1st electrically conductive film, a 2nd electrically conductive film, and two buffer members was produced. The structure thus obtained was applied to the light emitting device according to the first embodiment.
  • Example 1 two buffer members made of silver and having a thickness smaller than that of the second conductive film were provided in the peripheral region of the second conductive film.
  • the two buffer members were arranged so that the film thickness decreased with increasing distance from the second conductive film.
  • the upper surface of the first conductive film had an inclined surface that became lower as the distance from the second conductive film was increased in the region overlapping the buffer member.
  • the connection reliability between the first conductive film and the second conductive film was excellent when a current was passed between the first conductive film and the second conductive film for a long time.

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  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention se rapporte à une structure de jonction obtenue en réunissant mutuellement un premier film conducteur (110) et un second film conducteur (130) qui sont agencés sur un substrat (100). Le premier film conducteur (110), qui constitue la structure de jonction, est composé d'un matériau conducteur. Le second film conducteur (130), qui constitue la structure de jonction, est composé d'un matériau métallique. Un ou plusieurs éléments tampons composés d'un matériau différent du matériau conducteur, qui constitue le premier film conducteur (110), sont agencés sur le substrat (100) dans la région périphérique du second film conducteur (130). Le premier film conducteur (110) est formé de sorte à recouvrir le ou les éléments tampons et une partie du second film conducteur (130).
PCT/JP2013/059927 2013-04-01 2013-04-01 Structure de jonction et dispositif électroluminescent Ceased WO2014162449A1 (fr)

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Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000235890A (ja) * 1999-02-16 2000-08-29 Idemitsu Kosan Co Ltd エレクトロルミネッセンス表示装置
JP2004311230A (ja) * 2003-04-08 2004-11-04 Pioneer Electronic Corp 発光ディスプレイパネル及びその製造方法
JP2008071930A (ja) * 2006-09-14 2008-03-27 Pioneer Electronic Corp 有機エレクトロルミネッセンス表示パネル及びその製造方法
JP2009193754A (ja) * 2008-02-13 2009-08-27 Seiko Epson Corp 有機ｅｌ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000235890A (ja) * 1999-02-16 2000-08-29 Idemitsu Kosan Co Ltd エレクトロルミネッセンス表示装置
JP2004311230A (ja) * 2003-04-08 2004-11-04 Pioneer Electronic Corp 発光ディスプレイパネル及びその製造方法
JP2008071930A (ja) * 2006-09-14 2008-03-27 Pioneer Electronic Corp 有機エレクトロルミネッセンス表示パネル及びその製造方法
JP2009193754A (ja) * 2008-02-13 2009-08-27 Seiko Epson Corp 有機ｅｌ装置

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