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WO2014162387A1 - Wire connection structure and electrical device - Google Patents

Wire connection structure and electrical device Download PDF

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Publication number
WO2014162387A1
WO2014162387A1 PCT/JP2013/059827 JP2013059827W WO2014162387A1 WO 2014162387 A1 WO2014162387 A1 WO 2014162387A1 JP 2013059827 W JP2013059827 W JP 2013059827W WO 2014162387 A1 WO2014162387 A1 WO 2014162387A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductor
wire
opening
sealing film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/059827
Other languages
French (fr)
Japanese (ja)
Inventor
秀隆 大峡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku Pioneer Corp
Pioneer Corp
Original Assignee
Tohoku Pioneer Corp
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Pioneer Corp, Pioneer Corp filed Critical Tohoku Pioneer Corp
Priority to PCT/JP2013/059827 priority Critical patent/WO2014162387A1/en
Publication of WO2014162387A1 publication Critical patent/WO2014162387A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
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    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4845Details of ball bonds
    • H01L2224/48451Shape
    • H01L2224/48453Shape of the interface with the bonding area
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0175Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09372Pads and lands
    • H05K2201/09381Shape of non-curved single flat metallic pad, land or exposed part thereof; Shape of electrode of leadless component
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09818Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/099Coating over pads, e.g. solder resist partly over pads
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227Other objects, e.g. metallic pieces
    • H05K2201/10287Metal wires as connectors or conductors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10742Details of leads
    • H05K2201/1075Shape details
    • H05K2201/10787Leads having protrusions, e.g. for retention or insert stop
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10742Details of leads
    • H05K2201/1075Shape details
    • H05K2201/10795Details of lead tips, e.g. pointed
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10742Details of leads
    • H05K2201/1075Shape details
    • H05K2201/10863Adaptations of leads or holes for facilitating insertion
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0285Using ultrasound, e.g. for cleaning, soldering or wet treatment
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/13Moulding and encapsulation; Deposition techniques; Protective layers
    • H05K2203/1377Protective layers
    • H05K2203/1383Temporary protective insulating layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • H05K3/282Applying non-metallic protective coatings for inhibiting the corrosion of the circuit, e.g. for preserving the solderability
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • H05K3/288Removal of non-metallic coatings, e.g. for repairing

Definitions

  • the present invention relates to a wire connection structure and an electrical device.
  • connection methods uses a bonding wire (hereinafter referred to as a wire).
  • Patent Document 1 discloses connecting an organic EL (Electroluminescence) panel and a driving IC (Integrated Circuit) with a wire.
  • the driving IC is disposed on the sealing resin of the organic EL panel.
  • a cover When providing a conductor on the substrate, a cover may be provided to protect this conductor. On the other hand, when a covering is provided, it is difficult to electrically connect this conductor to another conductor.
  • the conductor is electrically connected to another conductor.
  • the invention according to claim 1 includes a substrate and a wire,
  • the substrate has a conductor and a covering covering the conductor,
  • the wire connection structure is characterized in that the wire passes through the opening of the covering and is connected to the conductor.
  • the invention according to claim 9 is a functional component having a substrate, a conductor formed on the substrate, and a covering covering the conductor; A wire connected to the functional component; With The wire is an electrical device that is connected to the conductor through an opening provided in the covering.
  • FIG. 3 is a plan view illustrating a configuration of a light-emitting device included in the electric apparatus according to Example 1.
  • FIG. 4 is a cross-sectional view taken along line AA in FIG. 3.
  • FIG. 4 is a sectional view taken along the line CC of FIG. 3.
  • FIG. 4 is a sectional view taken along line BB in FIG. 3. It is a figure which shows the modification of FIG.
  • FIG. 6 is a diagram illustrating a configuration of an electrical device according to a second embodiment.
  • FIG. 6 is a diagram illustrating a configuration of an electrical device according to a third embodiment.
  • FIG. 6 is a plan view illustrating a configuration of an electric device according to a fourth embodiment. It is a perspective view of an electric equipment.
  • FIG. 9 is a cross-sectional view illustrating a configuration of an electric device according to a fifth embodiment.
  • FIG. 1A is a plan view showing a wire connection structure according to the first embodiment
  • FIG. 1B is a cross-sectional view taken along the line AA in FIG.
  • at least the first surface of the substrate 100 is formed of an insulator.
  • a conductor 20 is formed on the first surface.
  • the conductor 20 is covered with a sealing film 210 (covering body).
  • the sealing film 210 is, for example, an aluminum oxide film.
  • An opening 212 is formed in the sealing film 210.
  • the opening 212 is located on a part (for example, one end) of the conductor 20 in a plan view.
  • a wire 30 is connected to the conductor 20.
  • the wire 30 is connected to the conductor 20 by having one end 32 passing through the opening 212.
  • the wire 30 is made of, for example, copper, but may be made of another metal (for example, Au).
  • the conductor 20 is a wiring.
  • the shape (outer shape) of the conductor 20 has a short side direction and a long side direction.
  • the short direction is the width direction of the conductor 20, and the long direction corresponds to the length direction of the conductor 20.
  • the opening 212 crosses the conductor 20 in the width direction (Y direction in FIG. 1A). Specifically, the opening 212 is linear, intersects with the conductor 20, and has an intersection.
  • the length of the opening 212 is longer than the width of the conductor 20.
  • the one end 32 of the wire 30 covers the opening 212 in the width direction of the opening 212 (X direction in FIG. 1A).
  • the size of one end 32 (also referred to as one end portion) of the wire 30 in the width direction of the opening 212 is larger than the width of the opening 212.
  • one end of the wire covers the conductor 20.
  • a part of the opening 212 may be configured by the surface layer of the conductor 20 being recessed or bent.
  • the conductor 20 is protected by the sealing film 210. Since the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.
  • the conductor 20 when the conductor 20 is connected to a moisture-sensitive element such as an organic EL element, if the opening 212 is provided, moisture may be transmitted to the element through the conductor 20.
  • one end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it is possible to suppress the sealing ability of the sealing film 210 against the organic EL element from being reduced due to the opening 212 being provided in the sealing film 210.
  • the opening 212 crosses the conductor 20 in the width direction (Y direction in FIG. 1A). For this reason, the opening 212 can be formed by moving the jig while being in contact with the sealing film 210. In this case, the opening 212 can be easily formed.
  • FIG. 2A is a plan view showing a wire connection structure according to the second embodiment.
  • the present embodiment is the same as the wire connection structure according to the first embodiment, except that the width of the opening 212 is small and the entire opening 212 is covered by the one end 32 of the wire 30.
  • the opening 212 shows a case where the wire 30 is formed by penetrating the sealing film 210.
  • one end of the wire 30 is minutely vibrated by ultrasonic waves or the like to crack or break through the sealing film 210.
  • an opening 212 is formed in the sealing film 210.
  • the portion of the sealing film 210 above the connection portion of the conductor 20 is made thinner than the other portions so that the sealing film 210 is easily cracked or pierced. It doesn't matter. Further, not only in the present embodiment but also in the covering body in Embodiment 1 and the examples described later, a part of the covering body may be formed thinner than the other parts.
  • FIG. 2B is a cross-sectional view taken along the line AA in FIG.
  • the outer peripheral edge of one end 32 of the wire 30 is located outside the outer peripheral edge of the opening 212 in the sealing film 210, and the sealing film on the outer peripheral edge of the opening 212 or outside thereof. It is arranged on 210.
  • a part of the sealing film 210 located below the one end 32 of the wire 30 includes a part of the sealing film 210 that is a ridge or a part of the sealing film 210 having unevenness. That is, the surface roughness of this part of the sealing film 210 is larger than the surface roughness of the other part of the sealing film 210.
  • the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.
  • One end 32 of the wire 30 covers the entire opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can further suppress that the sealing capability of the sealing film 210 falls.
  • the sealing film 210 is an oxide film formed on the surface layer of the conductor 20 (for example, an oxide film such as aluminum oxide, It may be a naturally formed oxide film or the like.
  • the opening 212 is formed in the oxide film.
  • FIG. 3 is a plan view illustrating a configuration of the light emitting device 10 (functional component) included in the electric apparatus according to the first embodiment.
  • 4 is a cross-sectional view taken along line AA in FIG. 3
  • FIG. 5 is a cross-sectional view taken along line CC in FIG. 3
  • FIG. 6 is a cross-sectional view taken along line BB in FIG.
  • the electric apparatus according to the present embodiment includes a light emitting device 10 and an electric component 70 (shown in FIG. 8).
  • the light emitting device 10 is, for example, a display or a lighting device.
  • the light emitting device 10 may include the first electrode 110, the organic layer 140, and the second electrode 150 to realize color rendering.
  • the first electrode 110, the organic layer 140, and the second electrode 150 may be formed on one surface without forming the partition wall 170 as a structure to be described later.
  • the case where the light-emitting device 10 is a display is illustrated.
  • the light emitting device 10 includes a substrate 100, a first electrode 110 (lower electrode), an organic EL element, an insulating layer 120, a plurality of first openings 122, a plurality of second openings 124, a plurality of lead wires 130, an organic layer 140, a first layer. It has two electrodes 150 (upper electrode), a plurality of lead wires 160, and a plurality of partition walls 170.
  • the insulating layer 120 and the partition 170 are an example of a structure formed over a substrate.
  • the organic EL element is composed of a laminate in which the organic layer 140 is sandwiched between the first electrode 110 and the second electrode 150. This organic EL element is located between the plurality of partition walls 170. That is, the organic EL element and the lead wiring 160 are located on the first surface side of the substrate 100. And the light emission part is comprised by the organic EL element.
  • the substrate 100 is formed of, for example, glass or a resin material, but may be formed of other materials.
  • the substrate 100 may have flexibility.
  • the first electrode 110 is formed on the first surface side of the substrate 100 and extends in a line shape in the first direction (Y direction in FIG. 3).
  • the first electrode 110 is a transparent electrode made of an inorganic material such as ITO (Indium Thin Oxide) or IZO (indium zinc oxide), or a conductive polymer such as a polythiophene derivative.
  • the first electrode 110 is formed as a part of the conductor (first conductor).
  • the first electrode 110 may be a metal thin film that is thin enough to transmit light.
  • the end of the first electrode 110 is connected to the lead wiring 130.
  • the first conductor is a layer in which the first electrode 110 and the lead wiring 130 are stacked.
  • the lead wiring 130 is a wiring that connects the first electrode 110 and the outside including electric components such as a driving IC.
  • the lead wire 130 is a metal wire made of a metal material or an alloy such as ITO, IZO, Al, Cr, or Ag, which is an oxidized conductive material, but is a wire formed of a conductive material other than metal. There may be. Further, the lead wiring 130 may have a laminated structure in which a plurality of layers are stacked. In this case, one layer of the lead wiring may be formed of the first conductor, and one layer of the first electrode 110 and the lead wiring 130 may be continuously formed of the first conductor.
  • the lead-out wiring 130 may have a configuration in which an alloy layer of Ni and Mo, an alloy layer of Mo and Nb, an Al layer, and an alloy layer of Ni and Mo are stacked in this order.
  • the lead-out wiring 130 may have a configuration in which an alloy layer of Ni and Nb, an alloy layer of Al and Nd, and an alloy layer of Mo and Nb are stacked in this order.
  • the lead wiring 132 and the lead wiring 130 are formed in this order on the substrate 100.
  • the lead-out wiring 132 is formed of the same material as that of the first electrode 110.
  • the lead wires 130 and 132 are formed up to the vicinity of the first opening 122 closest to the lead wire 130.
  • the first electrode 110 is covered with the insulating layer 120, but at least a part of the lead wiring 130 and the lead wiring 132 electrically connected to the first electrode 110 is covered with the insulating layer 120. It doesn't matter.
  • the insulating layer 120 is formed on and between the plurality of first electrodes 110 as shown in FIGS.
  • the insulating layer 120 is a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed.
  • a positive photosensitive resin is used as the insulating layer 120.
  • the insulating layer 120 may be a resin other than a polyimide resin, for example, an epoxy resin or an acrylic resin.
  • a plurality of first openings 122 and a plurality of second openings 124 are formed in the insulating layer 120.
  • the first opening 122 is located at the intersection of the second conductor 152 that becomes the first electrode 110 and the second electrode 150 in plan view.
  • a portion of the second conductor 152 located in the first opening 122 serves as the second electrode 150.
  • the plurality of first openings 122 are provided at predetermined intervals.
  • the plurality of first openings 122 are arranged in the direction in which the first electrode 110 extends.
  • the plurality of first openings 122 are also arranged in the extending direction of the second conductor 152. For this reason, the plurality of first openings 122 are arranged to form a matrix.
  • the second opening 124 is located at one end of each of the plurality of second conductors 152 in plan view.
  • the second openings 124 are arranged along one side of the matrix formed by the first openings 122. When viewed in a direction along one side (for example, the Y direction in FIG. 3), the second openings 124 are arranged at a predetermined interval in the direction along the first electrode 110.
  • the lead wiring 160 or a part of the lead wiring 160 is exposed from the second opening 124.
  • the insulating layer 120 having the first opening 122 and the insulating layer 120 having the second opening 124 may be formed of the same material or different materials. Alternatively, the insulating layer 120 having the second opening 124 may be formed on the outer peripheral side of the substrate 100 with respect to the insulating layer 120 having the first opening 122.
  • the insulating layer 120 having the first opening 122 and the insulating layer 120 having the second opening 124 may be continuous layers or separated layers (separated layers).
  • an organic layer 140 is formed.
  • the organic layer 140 is formed by stacking, for example, a hole transport layer, a light emitting layer, and an electron transport layer.
  • a part of the organic layer refers to, for example, a hole transport layer, a light emitting layer, an electron transport layer, a hole injection layer described later, or an electron injection layer.
  • the hole transport layer is in contact with the first electrode 110, and the electron transport layer is in contact with the second electrode 150. In this way, the organic layer 140 is sandwiched between the first electrode 110 and the second electrode 150.
  • a hole injection layer may be formed between the first electrode 110 and the hole transport layer, or an electron injection layer may be formed between the second electrode 150 and the electron transport layer. . Also, not all of the above layers are necessary. For example, when recombination of holes and electrons occurs in the electron transport layer, the light-emitting layer is unnecessary because the electron transport layer also functions as the light-emitting layer.
  • at least one of the first electrode 110, the hole injection layer, the hole transport layer, the electron transport layer, the electron injection layer, and the second conductor 152 to be the second electrode 150 is an inkjet method or the like. It may be formed using a coating method. Further, an electron injection layer made of an inorganic material such as LiF may be provided between the organic layer 140 and the second electrode 150.
  • each layer constituting the organic layer 140 is shown to protrude to the outside of the first opening 122.
  • each layer which comprises the organic layer 140 may be continuously formed between the adjacent 1st opening 122 in the direction where the partition 170 is extended, or continuously. It may not be formed.
  • the organic layer 140 is not formed in the second opening 124.
  • the organic layer 140 is sandwiched between the first electrode 110 and the second electrode 150.
  • the second electrode 150 is formed above the organic layer 140 and extends in a second direction (X direction in FIG. 3) intersecting the first direction.
  • the second electrode 150 is electrically connected to the organic layer 140.
  • the second electrode 150 may be formed on the organic layer 140 or may be formed on a conductive layer formed on the organic layer 140.
  • the second conductor 152 serving as the second electrode 150 is a metal layer formed of a metal material such as Ag or Al, or a layer formed of an oxidized conductive material such as IZO.
  • the light emitting device 10 includes a plurality of second conductors 152 that are parallel to each other.
  • One second conductor 152 is formed in a direction passing over the plurality of first openings 122.
  • the second conductor 152 is connected to the lead wiring 160.
  • the end portion of the second conductor 152 is positioned on the second opening 124, whereby the second conductor 152 and the lead-out wiring 160 are connected in the second opening 124.
  • a lead wire 162 is formed under the lead wire 160.
  • the width of the lead wiring 162 is larger than the width of the lead wiring 160, but may be small.
  • the lead wires 160 and 162 are formed in a region where the first electrode 110 and the lead wires 130 and 132 are not formed on the first surface side of the substrate 100.
  • the lead wiring 160 may be formed simultaneously with the lead wiring 130, for example, or may be formed in a separate process from the lead wiring 130.
  • the lead wiring 162 may be formed simultaneously with the lead wiring 132, for example, or may be formed in a separate process from the lead wiring 132.
  • the lead-out wiring 162 is formed of the same or different material as the material constituting the first electrode 110.
  • the first electrode 110 is formed of ITO, which is an oxidized conductive material, an oxide conductive material such as ITO having the same or different composition as the ITO constituting the first electrode 110, or IZO.
  • Materials include metal materials such as Al.
  • a part of one end side (light emitting part side) of the lead wiring 160 is covered with the insulating layer 120 and exposed through the second opening 124.
  • the second conductor 152 is connected to the lead wiring 160.
  • a part of the other end side (outer peripheral side of the substrate) of the lead wiring 160 is drawn to the outside of the insulating layer 120. That is, the other end side of the lead wiring 160 is exposed from the insulating layer 120.
  • a partition wall 170 is formed between the adjacent second conductors 152.
  • the partition wall 170 extends in parallel with the second conductor 152, that is, in the second direction.
  • the base of the partition wall 170 is, for example, the insulating layer 120.
  • the partition 170 is, for example, a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed.
  • the partition wall 170 is formed using, for example, a negative photosensitive resin.
  • the partition wall 170 may be made of a resin other than a polyimide resin, for example, an inorganic material such as an epoxy resin, an acrylic resin, or silicon dioxide.
  • the partition wall 170 has a trapezoidal cross-sectional shape (reverse trapezoid). That is, the width of the upper surface of the partition wall 170 is larger than the width of the lower surface of the partition wall 170. Therefore, by forming the partition wall 170 in front of the second conductor 152 (second electrode 150), the second conductor 152 is formed on the first surface s side of the substrate 100 using a vapor deposition method or a sputtering method.
  • the plurality of second electrodes 150 can be formed in a lump by forming them on one surface. Since the second conductor 152 formed on one surface is divided by the partition wall 170, a plurality of second conductors 152 are provided on the organic layer 140.
  • the position at which the second conductor 152 is divided includes, for example, the insulating layer 120 that is the base of the partition 170, the side surface of the partition 170, or the like. Then, by changing the extending direction of the partition wall 170, the second conductor 152 can be patterned into a free shape such as a stripe shape, a dot shape, an icon shape, or a curve. Note that a second conductor 152 is formed on the partition wall 170.
  • the organic layer 140 is made of a coating material
  • the organic layer 140 is formed by applying the coating material to the plurality of first openings 122.
  • the partition 170 is connected to the first openings 122 on both sides of the partition 170, and the first opening on one side of the partition 170 is connected to each other. It may have a function of preventing the organic layer 140 from being continuously formed from 122 to the first opening 122 on the other side.
  • the partition wall 170 is formed before the organic layer 140.
  • a sealing film 210 is formed above the second conductor 152.
  • the sealing film 210 is an aluminum oxide film, for example, and is formed using, for example, an ALD (Atomic Layer Deposition) method.
  • ALD Atomic Layer Deposition
  • the sealing film 210 is formed on the second conductor 152, but another film may exist between the second conductor 152 and the sealing film 210.
  • the film thickness of the sealing film 210 is, for example, not less than 10 nm and not more than 30 nm.
  • a film formed by the ALD method has high step coverage.
  • the step coverage means the uniformity of the film thickness in a portion where there is a step.
  • the sealing film 210 covers the insulating layer 120, the extraction wiring 160, and the extraction wiring 130. Note that the sealing film 210 may be formed using a film formation method other than the ALD method, for example, a CVD method.
  • the lead wire 130 and the lead wire 160 correspond to the conductor 20 in the embodiment. As shown in FIG. 8, the lead wiring 130 and the lead wiring 160 are connected to the electrical component 70, for example, the control IC via the wire 30.
  • the wire 30 passes through the opening 212 provided in the sealing film 210 and is connected to different lead wires 130 (or lead wires 160).
  • the opening 212 may be formed when the wire 30 is connected to the lead wiring 130 and the lead wiring 160. As described above, when the wire 30 is connected to the lead-out wiring 130 and the lead-out wiring 160, one end portion of the wire 30 is microvibrated by ultrasonic waves or the like to crack or break through the sealing film 210. At this time, an opening 212 is formed in the sealing film 210.
  • a part of the sealing film 210 that is on the connection portion with the wire 30 of the lead-out wirings 130 and 160 is replaced with another part. It may be formed thinner than the portion. All the thinly formed portions of the sealing film 210 may be located in the opening 212, or a part may be located outside the opening 212. As long as a crack or the like is generated in the sealing film 210 and the wire 30 can pass through the sealing film 210, the thickness and distribution of the sealing film 210 are not particularly limited.
  • the substrate 100 has a polygonal shape such as a square, a rectangle, or a rectangle.
  • This polygon includes a shape with rounded corners.
  • a plurality of end portions (part) of the lead wires 130 and 132 and end portions (part) of the lead wires 160 and 162 are arranged in parallel along one side of the substrate 100. Therefore, at least one of the end portions of the lead wires 130 and 132 and the end portions of the lead wires 160 and 162 is positioned in parallel inside one opening 212. In the opening 212, the end portions of the lead wirings 130 and 132 and the end portions of the lead wirings 160 and 162 are exposed or appear with respect to the sealing film 210.
  • the opening 212 may be provided individually for each of the end portions of the lead wires 130 and 132 and the end portions of the lead wires 160 and 162. In this case, it can suppress that the one end 32 of the adjacent wire 30 mutually short-circuits.
  • the wire 30 to be connected to the first electrode 110 is connected to the lead wire 130 through the opening 212
  • the wire 30 to be connected to the second electrode 150 is The lead wire 160 is connected to the lead wire 160 through the opening 212.
  • a conductive layer to be the first electrode 110 is formed on the substrate 100, and this conductive layer is selectively removed using etching (for example, dry etching or wet etching). As a result, the first electrode 110 and the lead wires 132 and 162 are formed on the substrate 100.
  • etching for example, dry etching or wet etching
  • a conductive layer to be the lead wirings 130 and 160 is formed on the substrate 100, the first electrode 110, and the lead wiring 162, and the conductive layer is etched (for example, dry etching or wet etching). Selectively remove. Thereby, the lead wires 130 and 160 are formed.
  • an insulating layer is formed on the substrate 100, the first electrode 110, and the lead wires 130 and 160, and this insulating layer is selectively removed using etching (for example, dry etching or wet etching). Thereby, the insulating layer 120, the first opening 122, and the second opening 124 are formed.
  • etching for example, dry etching or wet etching
  • the insulating layer 120 is subjected to heat treatment. Thereby, imidation of the insulating layer 120 proceeds.
  • an insulating film to be the partition wall 170 is formed on the insulating layer 120, and this insulating film is selectively removed using etching (for example, dry etching or wet etching). Thereby, the partition 170 is formed.
  • etching for example, dry etching or wet etching.
  • the cross-sectional shape of the partition 170 can be changed to an inverted trapezoid by adjusting the conditions during exposure and development.
  • the partition wall 170 is a negative resist
  • the portion of the negative resist irradiated with the irradiation light from the exposure light source is cured.
  • the partition 170 is formed by dissolving and removing the uncured portion of the negative resist with a developer.
  • each layer to be an organic layer is sequentially formed in the first opening 122.
  • at least the hole injection layer is formed using a coating method such as spray coating, dispenser coating, inkjet, or printing.
  • the coating material enters the first opening 122, and the coating material is dried, whereby the above-described layers are formed.
  • a coating material used in the coating method a polymer material, a polymer material containing a low-molecular material, or the like is suitable.
  • the coating material for example, a polyalkylthiophene derivative, a polyaniline derivative, triphenylamine, a sol-gel film of an inorganic compound, an organic compound film containing a Lewis acid, a conductive polymer, or the like can be used.
  • the remaining layers (for example, electron transport layers) of the organic layer 140 are formed by a vapor deposition method. However, these layers may also be formed using any of the above-described coating methods.
  • the second electrode 150 is formed on the organic layer 140 by using, for example, a vapor deposition method or a sputtering method.
  • At least one of the layers other than the organic layer 140 is also formed using any of the above-described coating methods. It may be formed.
  • the sealing film 210 is formed using the method described above. Thereafter, a resist pattern is formed on the sealing film 210, and the sealing film 210 is selectively etched (for example, dry etching or wet etching) using the resist pattern as a mask. Thereby, an opening 212 is formed in the sealing film 210. Note that the opening 212 may be formed by moving the jig in contact with the sealing film 210. Note that in the case where a part of the sealing film 210 is formed thinner than the other part, the etching time of the sealing film 210 may be shortened and etching may be stopped before opening.
  • the wire 30 is connected to each of the plurality of lead wires 130 and the plurality of lead wires 160.
  • the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.
  • One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.
  • variety of the part which does not become a light emission area among the edges of the light-emitting device 10 can be narrowed.
  • FIG. 9 is a diagram illustrating the configuration of the electrical device according to the second embodiment.
  • the electrical device according to the present embodiment has the same configuration as the electrical device according to the first embodiment except for the following points.
  • the drawing of the lead wires 130 and 132, the lead wires 160 and 162, and the sealing film 210 is omitted.
  • the light emitting device 10 has a sealing resin layer 300.
  • the sealing resin layer 300 is formed using, for example, a mold.
  • a circuit board 75 is formed on the sealing resin layer 300.
  • the circuit board 75 has a control IC.
  • the lead wires 130 and 160 of the light emitting device 10 are connected to the circuit board 75 via the wires 30.
  • the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.
  • One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.
  • FIG. 10 is a diagram illustrating the configuration of the electrical device according to the third embodiment.
  • the electrical device according to the present embodiment has the same configuration as the electrical device according to the second embodiment, except that the sealing plate 102 is used instead of the sealing resin layer 300.
  • a plurality of electrical components 70 such as a semiconductor package are provided on the sealing plate 102.
  • a conductor 20 is provided on the sealing plate 102.
  • the conductor 20 is a wiring and is connected to the electrical component 70.
  • One end 32 of the wire 30 is connected to the lead wiring 130 (or the lead wiring 160), and the other end of the wire 30 is connected to the conductor 20 on the sealing plate 102.
  • the connection between the first conductor 20 and the wire 30 can also be confirmed by the same method as in the embodiment.
  • the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.
  • One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.
  • FIG. 11 is a plan view illustrating the configuration of the electrical device according to the fourth embodiment.
  • FIG. 12 is a perspective view of the electrical apparatus.
  • the electric apparatus according to the present embodiment has a configuration in which a plurality of light emitting devices 10 are arranged in a matrix. The gap between adjacent light emitting devices 10 is as narrow as possible.
  • the light emitting device 10 has the configuration shown in any one of the second and third embodiments. For this reason, the width
  • the external connection unit 60 is provided near the light emitting devices 10 arranged in a matrix.
  • the external connection unit 60 is a part for connecting an electrical device to the outside.
  • the external connection unit 60 and the light emitting device 10 located next to the external connection unit 60 are connected to each other through the wire 30.
  • each of the plurality of light emitting devices 10 is electrically connected to the light emitting device 10 located adjacent thereto via a wire 30. Therefore, the light emitting device 10 that is not located next to the external connection unit 60 among the plurality of light emitting devices 10 can be electrically connected to the external connection unit 60 via the other light emitting devices 10.
  • the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.
  • One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.
  • the width of the portion of the edge of the light emitting device 10 that does not become the light emitting region can be narrowed, even if a plurality of light emitting devices 10 emit light simultaneously, the boundaries of the light emitting devices 10 are not noticeable. Therefore, one image can be displayed using the plurality of light emitting devices 10.
  • FIG. 13 is a cross-sectional view illustrating the configuration of the electrical device according to the fifth embodiment.
  • the electric apparatus according to the present embodiment has a liquid crystal display unit.
  • a liquid crystal layer 52 is provided between a transparent substrate 54 and a transparent substrate 56, and the liquid crystal layer 52 is sealed with a sealing layer 57.
  • the opening 212 is provided in the oxide film formed on the conductor 20 or the protective film (coating film) that protects the conductor 20, one end 32 of the wire 30 is connected to the conductor 20. Can do. One end 32 of the wire 30 covers the opening 212.
  • the oxide film described above is a metal oxide film such as aluminum oxide when the conductor 20 is formed of a metal material such as Al.
  • the protective film described above is formed of an inorganic material such as Ni, Mo, or Nb. Examples of protective films include a single layer made of Ni and Mo material, a single layer made of Mo and Ni, a single layer made of Ni and Nb material, and a single layer made of Mo and Nb material. It may be a single layer or a laminate in which two or more of these single layers are laminated. You may make it function as a protective film and may provide other functions, such as covering the conductor 20.
  • FIG. The illustration of the oxide film, protective film, and opening 212 is omitted.
  • An electrical component 70 is mounted on the transparent substrate 54.
  • the electrical component 70 is a control IC for the liquid crystal display unit.
  • the electrical component 70 is connected to a wiring (conductor 20) provided on the transparent substrate 54.
  • the end portion of the first conductor 20 is connected to the external connection terminal 72 through the wire 30.
  • the electrical component 70 and the wire 30 are sealed with a sealing resin 58. In plan view, the end of the external connection terminal 72 is located outside the sealing resin 58.
  • the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.
  • One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Provided is a wire connection structure in which at least a first surface of a substrate (100) is formed from an insulator. A conductor (20) is formed on the first surface. The conductor (20) is covered by a sealing film (210). The sealing film (210) is, for example, an aluminum oxide film. An opening (212) is formed in the sealing film (210). The opening (212) is positioned above a part (an end, for example) of the conductor (20) in a planar view. A wire (30) is connected to the conductor (20). The wire (30) is connected to the conductor (20) by passing one end (32) of said wire (30) through the opening (212).

Description

ワイヤの接続構造及び電気機器Wire connection structure and electrical equipment

 本発明は、ワイヤの接続構造及び電気機器に関する。 The present invention relates to a wire connection structure and an electrical device.

 発光装置などの電気機器は、制御素子などの他の部品と電気的に接続した状態で用いられる。ここで用いられる接続方法の一つに、ボンディングワイヤ(以下、ワイヤと記載)を用いるものがある。 Electrical devices such as light-emitting devices are used in a state where they are electrically connected to other components such as control elements. One of the connection methods used here uses a bonding wire (hereinafter referred to as a wire).

 例えば特許文献1には、有機EL(Electroluminescence)パネルと、駆動IC(Integrated Circuit)とをワイヤで接続することが開示されている。特許文献1において、駆動ICは、有機ELパネルの封止樹脂の上に配置されている。 For example, Patent Document 1 discloses connecting an organic EL (Electroluminescence) panel and a driving IC (Integrated Circuit) with a wire. In Patent Document 1, the driving IC is disposed on the sealing resin of the organic EL panel.

国際公開第2010/106637号International Publication No. 2010/106637

 基板上に導体を設ける場合、この導体を保護するために被覆体を設けることがある。一方、被覆体を設けると、この導体を他の導体に電気的に接続することが難しくなる。 When providing a conductor on the substrate, a cover may be provided to protect this conductor. On the other hand, when a covering is provided, it is difficult to electrically connect this conductor to another conductor.

 本発明が解決しようとする課題としては、基板上の導体を被覆体で覆った場合において、この導体を他の導体に電気的に接続することが一例として挙げられる。 As a problem to be solved by the present invention, for example, when a conductor on a substrate is covered with a covering, the conductor is electrically connected to another conductor.

 請求項1に記載の発明は、基板と、ワイヤとを備え、
 前記基板には、導体、当該導体を覆う被覆体があり、
 前記ワイヤが前記被覆体の開口を通過して前記導体に接続することを特徴とするワイヤの接続構造である。
The invention according to claim 1 includes a substrate and a wire,
The substrate has a conductor and a covering covering the conductor,
The wire connection structure is characterized in that the wire passes through the opening of the covering and is connected to the conductor.

 請求項9に記載の発明は、基板、前記基板上に形成された導体、及び前記導体を覆う被覆体を有する機能部品と、
 前記機能部品に接続するワイヤと、
を備え、
 前記ワイヤは、前記被覆体に設けられた開口を通過して前記導体に接続していることを特徴とする電気機器である。
The invention according to claim 9 is a functional component having a substrate, a conductor formed on the substrate, and a covering covering the conductor;
A wire connected to the functional component;
With
The wire is an electrical device that is connected to the conductor through an opening provided in the covering.

 上述した目的、およびその他の目的、特徴および利点は、以下に述べる好適な実施の形態、およびそれに付随する以下の図面によってさらに明らかになる。 The above-described object and other objects, features, and advantages will be further clarified by a preferred embodiment described below and the following drawings attached thereto.

(a)は実施形態1に係るワイヤの接続構造を示す平面図であり、(b)は(a)のA-A断面図である。(A) is a top view which shows the connection structure of the wire which concerns on Embodiment 1, (b) is AA sectional drawing of (a). (a)は実施形態2に係るワイヤの接続構造を示す平面図であり、(b)は(a)のA-A断面図である。(A) is a top view which shows the connection structure of the wire which concerns on Embodiment 2, (b) is AA sectional drawing of (a). 実施例1に係る電気機器が有する発光装置の構成を示す平面図である。FIG. 3 is a plan view illustrating a configuration of a light-emitting device included in the electric apparatus according to Example 1. 図3のA-A断面図である。FIG. 4 is a cross-sectional view taken along line AA in FIG. 3. 図3のC-C断面図である。FIG. 4 is a sectional view taken along the line CC of FIG. 3. 図3のB-B断面図である。FIG. 4 is a sectional view taken along line BB in FIG. 3. 図3の変形例を示す図である。It is a figure which shows the modification of FIG. 発光装置と電気部品の接続構造を示す図である。It is a figure which shows the connection structure of a light-emitting device and an electrical component. 実施例2に係る電気機器の構成を示す図である。FIG. 6 is a diagram illustrating a configuration of an electrical device according to a second embodiment. 実施例3に係る電気機器の構成を示す図である。FIG. 6 is a diagram illustrating a configuration of an electrical device according to a third embodiment. 実施例4に係る電気機器の構成を示す平面図である。FIG. 6 is a plan view illustrating a configuration of an electric device according to a fourth embodiment. 電気機器の斜視図である。It is a perspective view of an electric equipment. 実施例5に係る電気機器の構成を示す断面図である。FIG. 9 is a cross-sectional view illustrating a configuration of an electric device according to a fifth embodiment.

 以下、本発明の実施の形態について、図面を用いて説明する。尚、すべての図面において、同様な構成要素には同様の符号を付し、適宜説明を省略する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

(実施形態1)
 図1(a)は、実施形態1に係るワイヤの接続構造を示す平面図であり、図1(b)は、図1(a)のA-A断面図である。実施形態において、基板100のうち少なくとも第1面は、絶縁物により形成されている。そしてこの第1面には、導体20が形成されている。導体20は、封止膜210(被覆体)によって覆われている。封止膜210は、例えば酸化アルミニウム膜である。そして封止膜210には、開口212が形成されている。開口212は、平面視で導体20の一部(例えば一端)の上に位置している。そして、導体20には、ワイヤ30が接続している。ワイヤ30は、一端32が開口212を通過することにより、導体20に接続している。ワイヤ30は、例えば銅で形成されているが、他の金属(例えばAu)で形成されていても良い。
(Embodiment 1)
FIG. 1A is a plan view showing a wire connection structure according to the first embodiment, and FIG. 1B is a cross-sectional view taken along the line AA in FIG. In the embodiment, at least the first surface of the substrate 100 is formed of an insulator. A conductor 20 is formed on the first surface. The conductor 20 is covered with a sealing film 210 (covering body). The sealing film 210 is, for example, an aluminum oxide film. An opening 212 is formed in the sealing film 210. The opening 212 is located on a part (for example, one end) of the conductor 20 in a plan view. A wire 30 is connected to the conductor 20. The wire 30 is connected to the conductor 20 by having one end 32 passing through the opening 212. The wire 30 is made of, for example, copper, but may be made of another metal (for example, Au).

 図1(a)に示す例において、導体20は配線となっている。導体20の形状(外形)は、短手方向と長手方向を有する。短手方向は導体20の幅方向であり、長手方向は導体20の長さ方向に対応する。開口212は、導体20を幅方向(図1(a)におけるY方向)に横切っている。具体的には、開口212は線状になっており、導体20と交わっており、交差点を有している。開口212の長さは、導体20の幅よりも長い。そしてワイヤ30の一端32は、開口212の幅方向(図1(a)におけるX方向)においては、開口212を覆っている。すなわち、開口212の幅方向におけるワイヤ30の一端32(一方の端部ともいう)の大きさは、開口212の幅より大きい。また、導体20の幅方向においては、ワイヤの一端は導体20を覆っている。なお、導体20の表層が凹んでいる、又は抉れていることで、開口212の一部を構成していても構わない。 In the example shown in FIG. 1A, the conductor 20 is a wiring. The shape (outer shape) of the conductor 20 has a short side direction and a long side direction. The short direction is the width direction of the conductor 20, and the long direction corresponds to the length direction of the conductor 20. The opening 212 crosses the conductor 20 in the width direction (Y direction in FIG. 1A). Specifically, the opening 212 is linear, intersects with the conductor 20, and has an intersection. The length of the opening 212 is longer than the width of the conductor 20. The one end 32 of the wire 30 covers the opening 212 in the width direction of the opening 212 (X direction in FIG. 1A). That is, the size of one end 32 (also referred to as one end portion) of the wire 30 in the width direction of the opening 212 is larger than the width of the opening 212. In the width direction of the conductor 20, one end of the wire covers the conductor 20. Note that a part of the opening 212 may be configured by the surface layer of the conductor 20 being recessed or bent.

 本実施形態によれば、導体20は封止膜210によって保護されている。そして、封止膜210には開口212が設けられているため、ワイヤ30の一端32を導体20に接続することができる。 According to this embodiment, the conductor 20 is protected by the sealing film 210. Since the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20.

 また、導体20が有機EL素子などの水分に弱い素子に接続していた場合、開口212を設けると、水分が導体20を伝ってこの素子に伝達する可能性がある。これに対して本実施形態では、ワイヤ30の一端32は、開口212を覆っている。このため、封止膜210に開口212を設けても、封止膜210に開口212が設けられたことで、封止膜210による有機EL素子に対する封止能力が低下することを抑制できる。 Further, when the conductor 20 is connected to a moisture-sensitive element such as an organic EL element, if the opening 212 is provided, moisture may be transmitted to the element through the conductor 20. On the other hand, in this embodiment, one end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it is possible to suppress the sealing ability of the sealing film 210 against the organic EL element from being reduced due to the opening 212 being provided in the sealing film 210.

 また、開口212は、導体20を幅方向(図1(a)におけるY方向)に横切っている。このため、治具を封止膜210に当接させた状態で動かすことにより、開口212を形成することができる。この場合、開口212の形成を容易に行える。 The opening 212 crosses the conductor 20 in the width direction (Y direction in FIG. 1A). For this reason, the opening 212 can be formed by moving the jig while being in contact with the sealing film 210. In this case, the opening 212 can be easily formed.

(実施形態2)
 図2(a)は、実施形態2に係るワイヤの接続構造を示す平面図である。本実施形態は、開口212の幅が小さく、開口212の全体がワイヤ30の一端32によって覆われている点を除いて、実施形態1に係るワイヤの接続構造と同様である。この図の例では、開口212は、ワイヤ30が封止膜210を貫通したことで形成された場合を示している。ワイヤ30を導体20に接続する際、超音波等によりワイヤ30の一方の端部を微小振動させて封止膜210に亀裂を入れるか或いは突き破る。この時、封止膜210には開口212が形成される。また、ワイヤ30の接続の際に、容易に封止膜210に亀裂を形成又は突き破れるよう、封止膜210のうち導体20の接続箇所の上にある部分を他の部分より薄くしていても構わない。また、本実施形態に限らず実施形態1や後述する実施例における被覆体についても、同様に被覆体の一部分を他の部分より薄く形成しておいても構わない。
(Embodiment 2)
FIG. 2A is a plan view showing a wire connection structure according to the second embodiment. The present embodiment is the same as the wire connection structure according to the first embodiment, except that the width of the opening 212 is small and the entire opening 212 is covered by the one end 32 of the wire 30. In the example of this figure, the opening 212 shows a case where the wire 30 is formed by penetrating the sealing film 210. When connecting the wire 30 to the conductor 20, one end of the wire 30 is minutely vibrated by ultrasonic waves or the like to crack or break through the sealing film 210. At this time, an opening 212 is formed in the sealing film 210. Further, when the wire 30 is connected, the portion of the sealing film 210 above the connection portion of the conductor 20 is made thinner than the other portions so that the sealing film 210 is easily cracked or pierced. It doesn't matter. Further, not only in the present embodiment but also in the covering body in Embodiment 1 and the examples described later, a part of the covering body may be formed thinner than the other parts.

 図2(b)は、図2(a)のA-A断面図である。本図に示す例において、ワイヤ30の一端32の外周縁は、封止膜210のうち開口212の外周縁より外側に位置しており、開口部212の外周縁若しくはその外側にある封止膜210の上に配置されている。そして封止膜210のうちワイヤ30の一端32の下に位置する部分には、皺となった封止膜210の一部又は凹凸を有する封止膜210の一部がある。すなわち、封止膜210のこの部分の表面粗さは、封止膜210の他の部分の表面粗さよりも大きい。これは、ワイヤ30の一端32を導体20に接続する際に、ワイヤ30の一端32が封止膜210の一部を基板100の外周縁に押しやることで開口212が形成されるが、この押しやられた封止膜210の一部により皺や凹凸が形成されるためである。この際、封止膜210の一部が破片となって開口212内に取り残されることもある。なお、実施形態1においても、このような構造になることもある。 FIG. 2B is a cross-sectional view taken along the line AA in FIG. In the example shown in this figure, the outer peripheral edge of one end 32 of the wire 30 is located outside the outer peripheral edge of the opening 212 in the sealing film 210, and the sealing film on the outer peripheral edge of the opening 212 or outside thereof. It is arranged on 210. A part of the sealing film 210 located below the one end 32 of the wire 30 includes a part of the sealing film 210 that is a ridge or a part of the sealing film 210 having unevenness. That is, the surface roughness of this part of the sealing film 210 is larger than the surface roughness of the other part of the sealing film 210. This is because when the one end 32 of the wire 30 is connected to the conductor 20, the one end 32 of the wire 30 pushes a part of the sealing film 210 to the outer peripheral edge of the substrate 100, but the opening 212 is formed. This is because wrinkles and irregularities are formed by a part of the sealing film 210 that has been removed. At this time, a part of the sealing film 210 may be broken and left in the opening 212. In the first embodiment, such a structure may be used.

 本実施形態によっても、封止膜210には開口212が設けられているため、ワイヤ30の一端32を導体20に接続することができる。また、ワイヤ30の一端32は、開口212の全体を覆っている。このため、封止膜210に開口212を設けても、封止膜210の封止能力が低下することをさらに抑制できる。 Also in this embodiment, since the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20. One end 32 of the wire 30 covers the entire opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can further suppress that the sealing capability of the sealing film 210 falls.

 なお、上記した実施形態1,2において、導体20がAlなどの金属材料により形成されている場合、封止膜210は導体20の表層に形成された酸化膜(例えば酸化アルミニウムなどの酸化膜、自然に形成された酸化膜など)であってもよい。この場合において、開口212は、酸化膜に形成されることになる。 In the first and second embodiments described above, when the conductor 20 is formed of a metal material such as Al, the sealing film 210 is an oxide film formed on the surface layer of the conductor 20 (for example, an oxide film such as aluminum oxide, It may be a naturally formed oxide film or the like. In this case, the opening 212 is formed in the oxide film.

(実施例1)
 図3は、実施例1に係る電気機器が有する発光装置10(機能部品)の構成を示す平面図である。図4は図3のA-A断面図であり、図5は図3のC-C断面図であり、図6は図3のB-B断面図である。本実施例に係る電気機器は、発光装置10及び電気部品70(図8に図示)を有している。
(Example 1)
FIG. 3 is a plan view illustrating a configuration of the light emitting device 10 (functional component) included in the electric apparatus according to the first embodiment. 4 is a cross-sectional view taken along line AA in FIG. 3, FIG. 5 is a cross-sectional view taken along line CC in FIG. 3, and FIG. 6 is a cross-sectional view taken along line BB in FIG. The electric apparatus according to the present embodiment includes a light emitting device 10 and an electric component 70 (shown in FIG. 8).

 発光装置10は、例えばディスプレイや照明装置である。発光装置10が照明装置である場合、発光装置10は第1電極110、有機層140、及び第2電極150を有することで演色性を実現するものであっても良い。照明装置としての発光装置10は、後述する構造物としての隔壁170を形成せずに、第1電極110、有機層140、及び第2電極150が一面に形成されていてもよい。なお、以下の説明では、発光装置10がディスプレイである場合を例示している。 The light emitting device 10 is, for example, a display or a lighting device. When the light emitting device 10 is a lighting device, the light emitting device 10 may include the first electrode 110, the organic layer 140, and the second electrode 150 to realize color rendering. In the light emitting device 10 as the lighting device, the first electrode 110, the organic layer 140, and the second electrode 150 may be formed on one surface without forming the partition wall 170 as a structure to be described later. In addition, in the following description, the case where the light-emitting device 10 is a display is illustrated.

 発光装置10は、基板100、第1電極110(下部電極)、有機EL素子、絶縁層120、複数の第1開口122、複数の第2開口124、複数の引出配線130、有機層140、第2電極150(上部電極)、複数の引出配線160、及び複数の隔壁170を有している。絶縁層120、隔壁170は、基板の上に形成される構造物の一例である。そして、有機EL素子は、有機層140を第1電極110及び第2電極150で挟んだ積層物で構成される。この有機EL素子は、複数の隔壁170の間に位置している。すなわち有機EL素子及び引出配線160は、基板100の第1面側に位置している。そして、有機EL素子によって発光部が構成されている。 The light emitting device 10 includes a substrate 100, a first electrode 110 (lower electrode), an organic EL element, an insulating layer 120, a plurality of first openings 122, a plurality of second openings 124, a plurality of lead wires 130, an organic layer 140, a first layer. It has two electrodes 150 (upper electrode), a plurality of lead wires 160, and a plurality of partition walls 170. The insulating layer 120 and the partition 170 are an example of a structure formed over a substrate. The organic EL element is composed of a laminate in which the organic layer 140 is sandwiched between the first electrode 110 and the second electrode 150. This organic EL element is located between the plurality of partition walls 170. That is, the organic EL element and the lead wiring 160 are located on the first surface side of the substrate 100. And the light emission part is comprised by the organic EL element.

 基板100は、例えばガラスや樹脂材料で形成されているが、他の材料によって形成されていても良い。基板100は、可撓性を有していても良い。 The substrate 100 is formed of, for example, glass or a resin material, but may be formed of other materials. The substrate 100 may have flexibility.

 第1電極110は、基板100の第1面側に形成され、第1方向(図3におけるY方向)にライン状に延在している。第1電極110は、例えばITO(Indium Thin Oxide)やIZO(インジウム亜鉛酸化物)などの無機材料、またはポリチオフェン誘導体などの導電性高分子によって形成された透明電極である。また、第1電極110は導体(第1の導体)の一部として形成されている。第1電極110は、光が透過する程度に薄い金属薄膜であっても良い。そして第1電極110の端部は、引出配線130に接続している。図示の例では、第1の導体は、第1電極110と引出配線130を積層した層となっている。 The first electrode 110 is formed on the first surface side of the substrate 100 and extends in a line shape in the first direction (Y direction in FIG. 3). The first electrode 110 is a transparent electrode made of an inorganic material such as ITO (Indium Thin Oxide) or IZO (indium zinc oxide), or a conductive polymer such as a polythiophene derivative. The first electrode 110 is formed as a part of the conductor (first conductor). The first electrode 110 may be a metal thin film that is thin enough to transmit light. The end of the first electrode 110 is connected to the lead wiring 130. In the illustrated example, the first conductor is a layer in which the first electrode 110 and the lead wiring 130 are stacked.

 引出配線130は、第1電極110と駆動ICなどの電気部品を含む外部とを接続する配線である。引出配線130は、例えば、酸化導電材料であるITO、IZO、Al、Cr、又はAgなどの金属材料又は合金で構成される金属配線であるが、金属以外の導電性材料によって形成された配線であっても良い。また、引出配線130は複数の層が積まれた積層構造を備えていても良い。この場合、引出配線の1つの層が第1の導体で構成されており、第1電極110と引出配線130の1つの層が第1の導体で連続して形成されていても構わない。例えば引出配線130は、NiとMoの合金層、MoとNbの合金層、Al層、及びNiとMoの合金層をこの順に積層した構成を有していても良い。また引出配線130は、NiとNbの合金層、AlとNdの合金層、及びMoとNbの合金層をこの順に積層した構成を有していても良い。 The lead wiring 130 is a wiring that connects the first electrode 110 and the outside including electric components such as a driving IC. The lead wire 130 is a metal wire made of a metal material or an alloy such as ITO, IZO, Al, Cr, or Ag, which is an oxidized conductive material, but is a wire formed of a conductive material other than metal. There may be. Further, the lead wiring 130 may have a laminated structure in which a plurality of layers are stacked. In this case, one layer of the lead wiring may be formed of the first conductor, and one layer of the first electrode 110 and the lead wiring 130 may be continuously formed of the first conductor. For example, the lead-out wiring 130 may have a configuration in which an alloy layer of Ni and Mo, an alloy layer of Mo and Nb, an Al layer, and an alloy layer of Ni and Mo are stacked in this order. The lead-out wiring 130 may have a configuration in which an alloy layer of Ni and Nb, an alloy layer of Al and Nd, and an alloy layer of Mo and Nb are stacked in this order.

 図3に示す例では、基板100の上には、引出配線132及び引出配線130の順で形成されている。引出配線132は、第1電極110と同種の材料によって形成されている。本図に示す例では、引出配線130,132は引出配線130に最も近い第1開口122の近傍まで形成されている。図示の例では、第1電極110が絶縁層120で覆われているが、第1電極110に電気的に接続される引出配線130及び引出配線132の少なくとも一部が絶縁層120で覆われていても構わない。 In the example shown in FIG. 3, the lead wiring 132 and the lead wiring 130 are formed in this order on the substrate 100. The lead-out wiring 132 is formed of the same material as that of the first electrode 110. In the example shown in the drawing, the lead wires 130 and 132 are formed up to the vicinity of the first opening 122 closest to the lead wire 130. In the illustrated example, the first electrode 110 is covered with the insulating layer 120, but at least a part of the lead wiring 130 and the lead wiring 132 electrically connected to the first electrode 110 is covered with the insulating layer 120. It doesn't matter.

 絶縁層120は、図3~図6に示すように、複数の第1電極110上及びその間の領域に形成されている。絶縁層120は、ポリイミド系樹脂などの感光性の樹脂であり、露光及び現像されることによって、所望のパターンに形成されている。絶縁層120としては、例えば、ポジ型の感光性樹脂が用いられる。なお、絶縁層120はポリイミド系樹脂以外の樹脂、例えばエポキシ系樹脂やアクリル系樹脂であっても良い。 The insulating layer 120 is formed on and between the plurality of first electrodes 110 as shown in FIGS. The insulating layer 120 is a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed. As the insulating layer 120, for example, a positive photosensitive resin is used. The insulating layer 120 may be a resin other than a polyimide resin, for example, an epoxy resin or an acrylic resin.

 絶縁層120には、複数の第1開口122及び複数の第2開口124が形成されている。第1開口122は、平面視で第1電極110と第2電極150となる第2の導体152の交点に位置している。なお、第2の導体152のうち第1開口122内に位置する部分が第2電極150となる。複数の第1開口122は、所定の間隔を空けて設けられている。そして、複数の第1開口122は、第1電極110が延在する方向に並んでいる。また、複数の第1開口122は、第2の導体152の延在方向にも並んでいる。このため、複数の第1開口122はマトリクスを構成するように配置されていることになる。 A plurality of first openings 122 and a plurality of second openings 124 are formed in the insulating layer 120. The first opening 122 is located at the intersection of the second conductor 152 that becomes the first electrode 110 and the second electrode 150 in plan view. A portion of the second conductor 152 located in the first opening 122 serves as the second electrode 150. The plurality of first openings 122 are provided at predetermined intervals. The plurality of first openings 122 are arranged in the direction in which the first electrode 110 extends. The plurality of first openings 122 are also arranged in the extending direction of the second conductor 152. For this reason, the plurality of first openings 122 are arranged to form a matrix.

 第2開口124は、平面視で複数の第2の導体152のそれぞれの一端に位置している。また第2開口124は、第1開口122が構成するマトリクスの一辺に沿って配置されている。そしてこの一辺に沿う方向(例えば図3におけるY方向)で見た場合、第2開口124は、第1電極110に沿う方向において、所定の間隔で配置されている。第2開口124からは、引出配線160又は引出配線160の一部分が露出している。 The second opening 124 is located at one end of each of the plurality of second conductors 152 in plan view. The second openings 124 are arranged along one side of the matrix formed by the first openings 122. When viewed in a direction along one side (for example, the Y direction in FIG. 3), the second openings 124 are arranged at a predetermined interval in the direction along the first electrode 110. The lead wiring 160 or a part of the lead wiring 160 is exposed from the second opening 124.

 なお、第1開口122を有する絶縁層120と、第2開口124を有する絶縁層120は同一の材料で形成してもよいし、異なる材料で形成してもよい。また、第1開口122を有する絶縁層120に対して基板100の外周部側に、第2開口124を有する絶縁層120を形成してもよい。また、第1開口122を有する絶縁層120と第2開口124を有する絶縁層120は連続する層であってもよく、分離した層(分断している層)であってよい。 Note that the insulating layer 120 having the first opening 122 and the insulating layer 120 having the second opening 124 may be formed of the same material or different materials. Alternatively, the insulating layer 120 having the second opening 124 may be formed on the outer peripheral side of the substrate 100 with respect to the insulating layer 120 having the first opening 122. The insulating layer 120 having the first opening 122 and the insulating layer 120 having the second opening 124 may be continuous layers or separated layers (separated layers).

 第1開口122と重なる領域には、有機層140が形成されている。有機層140は、例えば、正孔輸送層、発光層、及び電子輸送層を積層したものである。なお、以下の説明において、一部の有機層とは、例えば、正孔輸送層、発光層、電子輸送層、後述する正孔注入層、又は電子注入層を指す。正孔輸送層は第1電極110に接しており、電子輸送層は第2電極150に接している。このようにして、有機層140は第1電極110と第2電極150の間で挟持されている。 In the region overlapping with the first opening 122, an organic layer 140 is formed. The organic layer 140 is formed by stacking, for example, a hole transport layer, a light emitting layer, and an electron transport layer. In the following description, a part of the organic layer refers to, for example, a hole transport layer, a light emitting layer, an electron transport layer, a hole injection layer described later, or an electron injection layer. The hole transport layer is in contact with the first electrode 110, and the electron transport layer is in contact with the second electrode 150. In this way, the organic layer 140 is sandwiched between the first electrode 110 and the second electrode 150.

 なお、第1電極110と正孔輸送層との間には正孔注入層が形成されても良いし、第2電極150と電子輸送層との間には電子注入層が形成されてもよい。また、上記した各層の全てが必要ということではない。例えば電子輸送層内でホールと電子の再結合が生じている場合、電子輸送層が発光層の機能を兼ねているため、発光層は不要となる。また、これら第1電極110、正孔注入層、正孔輸送層、電子輸送層、電子注入層、及び第2電極150となる第2の導体152のうち、少なくとも1つは、インクジェット法などの塗布法を用いて形成されていても良い。また、有機層140と第2電極150との間には、LiFなどの無機材料で構成される電子注入層を設けても構わない。 A hole injection layer may be formed between the first electrode 110 and the hole transport layer, or an electron injection layer may be formed between the second electrode 150 and the electron transport layer. . Also, not all of the above layers are necessary. For example, when recombination of holes and electrons occurs in the electron transport layer, the light-emitting layer is unnecessary because the electron transport layer also functions as the light-emitting layer. In addition, at least one of the first electrode 110, the hole injection layer, the hole transport layer, the electron transport layer, the electron injection layer, and the second conductor 152 to be the second electrode 150 is an inkjet method or the like. It may be formed using a coating method. Further, an electron injection layer made of an inorganic material such as LiF may be provided between the organic layer 140 and the second electrode 150.

 なお、図4及び図5に示す例では、有機層140を構成する各層は、いずれも第1開口122の外側まではみ出している場合を示している。そして図5に示すように、有機層140を構成する各層は、隔壁170が延在する方向において、隣り合う第1開口122の間にも連続して形成されていてもよいし、連続して形成していなくてもよい。ただし、図6に示すように、有機層140は、第2開口124には形成されていない。 In the example shown in FIG. 4 and FIG. 5, each layer constituting the organic layer 140 is shown to protrude to the outside of the first opening 122. And as shown in FIG. 5, each layer which comprises the organic layer 140 may be continuously formed between the adjacent 1st opening 122 in the direction where the partition 170 is extended, or continuously. It may not be formed. However, as shown in FIG. 6, the organic layer 140 is not formed in the second opening 124.

 上記したように、有機層140は、第1電極110及び第2電極150に挟持されている。第2電極150は、図3~図6に示すように、有機層140より上に形成され、第1方向と交わる第2方向(図3におけるX方向)に延在している。第2電極150は、有機層140に電気的に接続している。例えば第2電極150は、有機層140上に形成されていても良いし、有機層140の上に形成された導電層の上に形成されていても良い。第2電極150となる第2の導体152は、例えばAgやAlなどの金属材料で形成された金属層、IZOなどの酸化導電材料で形成された層である。発光装置10は、互いに平行な複数の第2の導体152を有している。一つの第2の導体152は、複数の第1開口122上を通過する方向に形成されている。また、第2の導体152は引出配線160に接続している。図示の例では、第2の導体152の端部が第2開口124上に位置することにより、第2開口124において第2の導体152と引出配線160は接続している。 As described above, the organic layer 140 is sandwiched between the first electrode 110 and the second electrode 150. As shown in FIGS. 3 to 6, the second electrode 150 is formed above the organic layer 140 and extends in a second direction (X direction in FIG. 3) intersecting the first direction. The second electrode 150 is electrically connected to the organic layer 140. For example, the second electrode 150 may be formed on the organic layer 140 or may be formed on a conductive layer formed on the organic layer 140. The second conductor 152 serving as the second electrode 150 is a metal layer formed of a metal material such as Ag or Al, or a layer formed of an oxidized conductive material such as IZO. The light emitting device 10 includes a plurality of second conductors 152 that are parallel to each other. One second conductor 152 is formed in a direction passing over the plurality of first openings 122. The second conductor 152 is connected to the lead wiring 160. In the illustrated example, the end portion of the second conductor 152 is positioned on the second opening 124, whereby the second conductor 152 and the lead-out wiring 160 are connected in the second opening 124.

 図3の例では、引出配線160の下には引出配線162が形成されている。図3に示す例では、引出配線162の幅は、引出配線160の幅に対して大きいが、小さくてもよい。引出配線160,162は、基板100の第1面側のうち第1電極110及び引出配線130、132が形成されていない領域に形成されている。引出配線160は、例えば引出配線130と同時に形成されてもよいし、引出配線130とは別工程で形成されてもよい。同様に、引出配線162は、例えば引出配線132と同時に形成してもよいし、引出配線132とは別工程で形成されてもよい。 In the example of FIG. 3, a lead wire 162 is formed under the lead wire 160. In the example shown in FIG. 3, the width of the lead wiring 162 is larger than the width of the lead wiring 160, but may be small. The lead wires 160 and 162 are formed in a region where the first electrode 110 and the lead wires 130 and 132 are not formed on the first surface side of the substrate 100. The lead wiring 160 may be formed simultaneously with the lead wiring 130, for example, or may be formed in a separate process from the lead wiring 130. Similarly, the lead wiring 162 may be formed simultaneously with the lead wiring 132, for example, or may be formed in a separate process from the lead wiring 132.

 引出配線162は、第1電極110を構成する材料と同種の又は異なる材料で形成されている。ここで同種の材料の例としては、第1電極110が酸化導電材料であるITOで形成されている場合、第1電極110を構成するITOと同一又は異なる組成のITO、又はIZOなどの酸化導電材が挙げられる。また異なる材料の例として、Al等の金属材料などが挙げられる。 The lead-out wiring 162 is formed of the same or different material as the material constituting the first electrode 110. Here, as an example of the same type of material, when the first electrode 110 is formed of ITO, which is an oxidized conductive material, an oxide conductive material such as ITO having the same or different composition as the ITO constituting the first electrode 110, or IZO. Materials. Examples of different materials include metal materials such as Al.

 引出配線160の一端側(発光部側)の一部分は、絶縁層120に覆われており、かつ第2開口124にて露出している。そして第2開口124において、第2の導体152は引出配線160に接続している。また、引出配線160の他端側(基板の外周部側)の一部分は、絶縁層120の外側に引き出されている。すなわち、引出配線160の他端側は、絶縁層120から露出している。 A part of one end side (light emitting part side) of the lead wiring 160 is covered with the insulating layer 120 and exposed through the second opening 124. In the second opening 124, the second conductor 152 is connected to the lead wiring 160. A part of the other end side (outer peripheral side of the substrate) of the lead wiring 160 is drawn to the outside of the insulating layer 120. That is, the other end side of the lead wiring 160 is exposed from the insulating layer 120.

 隣り合う第2の導体152の間には、隔壁170が形成されている。隔壁170は、第2の導体152と平行すなわち第2方向に延在している。隔壁170の下地は、例えば絶縁層120である。隔壁170は、例えばポリイミド系樹脂などの感光性の樹脂であり、露光及び現像されることによって、所望のパターンに形成されている。隔壁170は、例えばネガ型の感光性樹脂を用いて形成される。なお、隔壁170はポリイミド系樹脂以外の樹脂、例えばエポキシ系樹脂やアクリル系樹脂、二酸化珪素等の無機材料で構成されていても良い。 A partition wall 170 is formed between the adjacent second conductors 152. The partition wall 170 extends in parallel with the second conductor 152, that is, in the second direction. The base of the partition wall 170 is, for example, the insulating layer 120. The partition 170 is, for example, a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed. The partition wall 170 is formed using, for example, a negative photosensitive resin. The partition wall 170 may be made of a resin other than a polyimide resin, for example, an inorganic material such as an epoxy resin, an acrylic resin, or silicon dioxide.

 隔壁170は、断面が台形の上下を逆にした形状(逆台形)になっている。すなわち隔壁170の上面の幅は、隔壁170の下面の幅よりも大きい。このため、隔壁170を第2の導体152(第2電極150)より前に形成しておくことで、蒸着法やスパッタリング法を用いて、基板100の第1面s側に第2の導体152を一面に形成することで、複数の第2電極150を一括で形成することができる。一面に形成した第2の導体152は、隔壁170により分断されるため、複数の第2の導体152が有機層140の上に設けられることになる。第2の導体152が分断される位置は、例えば、隔壁170の下地である絶縁層120上、又は隔壁170の側面などが挙げられる。そして隔壁170の延在方向を変えることにより、第2の導体152をストライプ形状、ドット形状、アイコン状、曲線などの自由な形状にパターニングできる。なお、隔壁170の上には、第2の導体152が形成されている。 The partition wall 170 has a trapezoidal cross-sectional shape (reverse trapezoid). That is, the width of the upper surface of the partition wall 170 is larger than the width of the lower surface of the partition wall 170. Therefore, by forming the partition wall 170 in front of the second conductor 152 (second electrode 150), the second conductor 152 is formed on the first surface s side of the substrate 100 using a vapor deposition method or a sputtering method. The plurality of second electrodes 150 can be formed in a lump by forming them on one surface. Since the second conductor 152 formed on one surface is divided by the partition wall 170, a plurality of second conductors 152 are provided on the organic layer 140. The position at which the second conductor 152 is divided includes, for example, the insulating layer 120 that is the base of the partition 170, the side surface of the partition 170, or the like. Then, by changing the extending direction of the partition wall 170, the second conductor 152 can be patterned into a free shape such as a stripe shape, a dot shape, an icon shape, or a curve. Note that a second conductor 152 is formed on the partition wall 170.

 また、有機層140を塗布材料で構成する場合、複数の第1開口122に塗布材料を塗布することで有機層140は形成される。塗布材料を複数の第1開口122に塗布した際、隔壁170は、隔壁170の両側にある第1開口122に塗布された塗布材料が互いに繋がって、隔壁170の一方の側にある第1開口122から他方の側にある第1開口122にかけて、有機層140が連続して形成されることを防止する機能を有していても構わない。この場合、隔壁170は、有機層140より前に形成されている。 Further, when the organic layer 140 is made of a coating material, the organic layer 140 is formed by applying the coating material to the plurality of first openings 122. When the coating material is applied to the plurality of first openings 122, the partition 170 is connected to the first openings 122 on both sides of the partition 170, and the first opening on one side of the partition 170 is connected to each other. It may have a function of preventing the organic layer 140 from being continuously formed from 122 to the first opening 122 on the other side. In this case, the partition wall 170 is formed before the organic layer 140.

 第2の導体152より上には、封止膜210が形成されている。封止膜210は、例えば酸化アルミニウム膜であり、例えばALD(Atomic Layer Deposition)法を用いて形成されている。本図に示す例では、第2の導体152の上に封止膜210が形成されているが、第2の導体152と封止膜210の間に他の膜が存在していても良い。封止膜210の膜厚は、例えば10nm以上30nm以下である。ALD法により成膜された膜は段差被覆性が高い。ここで、段差被覆性とは、段差がある部分における膜厚の均一性のことをいう。段差被覆性が高いとは、段差がある部分においても膜厚の均一性が高いことであり、段差被覆性が低いとは、段差がある部分において膜厚の均一性が低いことである。封止膜210は、図3に示すように、絶縁層120、引出配線160、及び引出配線130を覆っている。なお、封止膜210は、ALD法以外の成膜法、例えばCVD法を用いて形成されても良い。 A sealing film 210 is formed above the second conductor 152. The sealing film 210 is an aluminum oxide film, for example, and is formed using, for example, an ALD (Atomic Layer Deposition) method. In the example shown in this figure, the sealing film 210 is formed on the second conductor 152, but another film may exist between the second conductor 152 and the sealing film 210. The film thickness of the sealing film 210 is, for example, not less than 10 nm and not more than 30 nm. A film formed by the ALD method has high step coverage. Here, the step coverage means the uniformity of the film thickness in a portion where there is a step. High step coverage means that film thickness uniformity is high even in a stepped portion, and low step coverage means that film thickness uniformity is low in a stepped portion. As shown in FIG. 3, the sealing film 210 covers the insulating layer 120, the extraction wiring 160, and the extraction wiring 130. Note that the sealing film 210 may be formed using a film formation method other than the ALD method, for example, a CVD method.

 引出配線130及び引出配線160は、実施形態における導体20に対応している。そして図8に示すように、引出配線130及び引出配線160は、ワイヤ30を介して電気部品70、例えば制御ICに接続している。ワイヤ30は、封止膜210に設けられた開口212を通過することにより、互いに異なる引出配線130(又は引出配線160)に接続している。 The lead wire 130 and the lead wire 160 correspond to the conductor 20 in the embodiment. As shown in FIG. 8, the lead wiring 130 and the lead wiring 160 are connected to the electrical component 70, for example, the control IC via the wire 30. The wire 30 passes through the opening 212 provided in the sealing film 210 and is connected to different lead wires 130 (or lead wires 160).

 また、開口212はワイヤ30を引出配線130及び引出配線160に接続する際に形成されていても構わない。上述したように、ワイヤ30を引出配線130及び引出配線160に接続する際、超音波等によりワイヤ30の一方の端部を微小振動させて封止膜210に亀裂を入れるか或いは突き破る。この時、封止膜210には開口212が形成される。 The opening 212 may be formed when the wire 30 is connected to the lead wiring 130 and the lead wiring 160. As described above, when the wire 30 is connected to the lead-out wiring 130 and the lead-out wiring 160, one end portion of the wire 30 is microvibrated by ultrasonic waves or the like to crack or break through the sealing film 210. At this time, an opening 212 is formed in the sealing film 210.

 また、ワイヤ30の接続によって、容易に封止膜210に亀裂を形成又は突き破れるよう、封止膜210のうち、引出配線130、160のワイヤ30との接続箇所の上にある部分を他の部分より薄く形成おいても構わない。封止膜210のうち薄く形成された部分は全てが開口212内に位置していても構わないし、一部が開口212外に位置していても構わない。封止膜210に亀裂等を生じさせてワイヤ30が封止膜210を通過できれば、封止膜210の厚さ及びその分布は特に限定はされない。 Further, in order to easily form or break a crack in the sealing film 210 by the connection of the wire 30, a part of the sealing film 210 that is on the connection portion with the wire 30 of the lead-out wirings 130 and 160 is replaced with another part. It may be formed thinner than the portion. All the thinly formed portions of the sealing film 210 may be located in the opening 212, or a part may be located outside the opening 212. As long as a crack or the like is generated in the sealing film 210 and the wire 30 can pass through the sealing film 210, the thickness and distribution of the sealing film 210 are not particularly limited.

 本図に示す例において、基板100は正方形、長方形、矩形等の多角形を有している。なお、この多角形は、角が丸い形も含む。そして引出配線130,132の端部(一部)、並びに引出配線160,162の端部(一部)は、基板100の一辺に沿って複数並列に配置されている。このため、一つの開口212の内側には、引出配線130,132の端部、及び引出配線160,162の端部の少なくとも一方が、複数並列に位置している。また、開口212において、引出配線130,132の端部、並びに引出配線160,162の端部は封止膜210に対して露出しているか、又は現れている。 In the example shown in the figure, the substrate 100 has a polygonal shape such as a square, a rectangle, or a rectangle. This polygon includes a shape with rounded corners. A plurality of end portions (part) of the lead wires 130 and 132 and end portions (part) of the lead wires 160 and 162 are arranged in parallel along one side of the substrate 100. Therefore, at least one of the end portions of the lead wires 130 and 132 and the end portions of the lead wires 160 and 162 is positioned in parallel inside one opening 212. In the opening 212, the end portions of the lead wirings 130 and 132 and the end portions of the lead wirings 160 and 162 are exposed or appear with respect to the sealing film 210.

 ただし、図7に示すように、開口212は、引出配線130,132の端部及び引出配線160,162の端部のそれぞれに対して個別に設けられていても良い。この場合、隣り合うワイヤ30の一端32が互いに短絡することを抑制できる。 However, as shown in FIG. 7, the opening 212 may be provided individually for each of the end portions of the lead wires 130 and 132 and the end portions of the lead wires 160 and 162. In this case, it can suppress that the one end 32 of the adjacent wire 30 mutually short-circuits.

 そして、図3及び図7に示すように、第1電極110に接続すべきワイヤ30は、開口212を通過して引出配線130に接続しており、第2電極150に接続すべきワイヤ30は、開口212を介して引出配線160に接続している。 3 and 7, the wire 30 to be connected to the first electrode 110 is connected to the lead wire 130 through the opening 212, and the wire 30 to be connected to the second electrode 150 is The lead wire 160 is connected to the lead wire 160 through the opening 212.

 次に、発光装置10の製造方法について説明する。まず基板100上に第1電極110となる導電層を形成し、この導電層をエッチング(例えばドライエッチング又はウェットエッチング)などを利用し、選択的に除去する。これにより、基板100上には、第1電極110、引出配線132,162が形成される。 Next, a method for manufacturing the light emitting device 10 will be described. First, a conductive layer to be the first electrode 110 is formed on the substrate 100, and this conductive layer is selectively removed using etching (for example, dry etching or wet etching). As a result, the first electrode 110 and the lead wires 132 and 162 are formed on the substrate 100.

 次いで、基板100上、第1電極110上、及び引出配線162上に、引出配線130,160となる導電層を形成し、この導電層をエッチング(例えばドライエッチング又はウェットエッチング)などを利用し、選択的に除去する。これにより、引出配線130,160が形成される。 Next, a conductive layer to be the lead wirings 130 and 160 is formed on the substrate 100, the first electrode 110, and the lead wiring 162, and the conductive layer is etched (for example, dry etching or wet etching). Selectively remove. Thereby, the lead wires 130 and 160 are formed.

 次いで、基板100上、第1電極110上、及び引出配線130,160上に絶縁層を形成し、この絶縁層をエッチング(例えばドライエッチング又はウェットエッチング)などを利用し、選択的に除去する。これにより、絶縁層120、第1開口122、及び第2開口124が形成される。例えば絶縁層120がポリイミドで形成されている場合、絶縁層120には加熱処理が行われる。これにより、絶縁層120のイミド化が進む。 Next, an insulating layer is formed on the substrate 100, the first electrode 110, and the lead wires 130 and 160, and this insulating layer is selectively removed using etching (for example, dry etching or wet etching). Thereby, the insulating layer 120, the first opening 122, and the second opening 124 are formed. For example, when the insulating layer 120 is formed of polyimide, the insulating layer 120 is subjected to heat treatment. Thereby, imidation of the insulating layer 120 proceeds.

 次いで、絶縁層120上に隔壁170となる絶縁膜を形成し、この絶縁膜をエッチング(例えばドライエッチング又はウェットエッチング)など利用し、選択的に除去する。これにより、隔壁170が形成される。隔壁170が感光性の絶縁膜で形成される場合、露光及び現像時の条件を調節することにより、隔壁170の断面形状を逆台形にすることができる。 Next, an insulating film to be the partition wall 170 is formed on the insulating layer 120, and this insulating film is selectively removed using etching (for example, dry etching or wet etching). Thereby, the partition 170 is formed. In the case where the partition 170 is formed using a photosensitive insulating film, the cross-sectional shape of the partition 170 can be changed to an inverted trapezoid by adjusting the conditions during exposure and development.

 隔壁170がネガ型レジストである場合、このネガ型レジストは、露光光源から照射光が照射された部分が硬化する。そして、このネガ型レジストのうち未硬化部分を現像液で溶解除去することにより、隔壁170が形成される。 When the partition wall 170 is a negative resist, the portion of the negative resist irradiated with the irradiation light from the exposure light source is cured. The partition 170 is formed by dissolving and removing the uncured portion of the negative resist with a developer.

 次いで、第1開口122内に有機層となる各層を順に形成する。これらの層のうち少なくとも正孔注入層は、例えばスプレー塗布、ディスペンサー塗布、インクジェット、又は印刷などの塗布法を用いて形成される。この場合、第1開口122内に塗布材料が入り込み、この塗布材料が乾燥することにより、上記した各層が形成される。塗布法で用いられる塗布材料としては、高分子材料、高分子材料中に低分子材料を含んだものなどが適している。塗布材料としては、例えば、ポリアルキルチオフェン誘導体、ポリアニリン誘導体、トリフェニルアミン、無機化合物のゾルゲル膜、ルイス酸を含む有機化合物膜、導電性高分子などを利用することができる。なお、有機層140のうち残りの層(例えば電子輸送層)は、蒸着法により形成される。ただしこれらの層も、上記した塗布法のいずれかを用いて形成されても良い。 Next, each layer to be an organic layer is sequentially formed in the first opening 122. Among these layers, at least the hole injection layer is formed using a coating method such as spray coating, dispenser coating, inkjet, or printing. In this case, the coating material enters the first opening 122, and the coating material is dried, whereby the above-described layers are formed. As a coating material used in the coating method, a polymer material, a polymer material containing a low-molecular material, or the like is suitable. As the coating material, for example, a polyalkylthiophene derivative, a polyaniline derivative, triphenylamine, a sol-gel film of an inorganic compound, an organic compound film containing a Lewis acid, a conductive polymer, or the like can be used. The remaining layers (for example, electron transport layers) of the organic layer 140 are formed by a vapor deposition method. However, these layers may also be formed using any of the above-described coating methods.

 次いで、有機層140上に第2電極150を、例えば蒸着法やスパッタリング法を用いて形成する。 Next, the second electrode 150 is formed on the organic layer 140 by using, for example, a vapor deposition method or a sputtering method.

 なお、有機層140以外の層、例えば第1電極110、絶縁層120、引出配線130、引出配線160、第2電極150、及び隔壁170の少なくとも一つも、上記した塗布法のいずれかを用いて形成されても良い。 Note that at least one of the layers other than the organic layer 140, for example, the first electrode 110, the insulating layer 120, the lead-out wiring 130, the lead-out wiring 160, the second electrode 150, and the partition wall 170 is also formed using any of the above-described coating methods. It may be formed.

 次いで、封止膜210を、上述した方法を用いて形成する。その後、封止膜210上にレジストパターンを形成し、このレジストパターンをマスクとして封止膜210を選択的にエッチング(例えばドライエッチング又はウェットエッチング)する。これにより、封止膜210には開口212が形成される。なお、開口212は、治具を封止膜210に当接させた状態で動かすことにより、形成されても良い。なお、封止膜210の一部分を他の部分より薄く形成する場合には、封止膜210のエッチング時間を短くして開口する前にエッチングを止めればよい。 Next, the sealing film 210 is formed using the method described above. Thereafter, a resist pattern is formed on the sealing film 210, and the sealing film 210 is selectively etched (for example, dry etching or wet etching) using the resist pattern as a mask. Thereby, an opening 212 is formed in the sealing film 210. Note that the opening 212 may be formed by moving the jig in contact with the sealing film 210. Note that in the case where a part of the sealing film 210 is formed thinner than the other part, the etching time of the sealing film 210 may be shortened and etching may be stopped before opening.

 その後、複数の引出配線130及び複数の引出配線160のそれぞれに、ワイヤ30を接続する。 Thereafter, the wire 30 is connected to each of the plurality of lead wires 130 and the plurality of lead wires 160.

 本実施例によっても、封止膜210には開口212が設けられているため、ワイヤ30の一端32を導体20に接続することができる。また、ワイヤ30の一端32は、開口212を覆っている。このため、封止膜210に開口212を設けても、封止膜210の封止能力が低下することを抑制できる。 Also in this embodiment, since the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20. One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.

 また、フレキシブル基板を用いて発光装置10と電気部品70とを接続する場合と比較して、発光装置10の縁のうち発光領域とならない部分の幅を狭くすることができる。 Moreover, compared with the case where the light-emitting device 10 and the electrical component 70 are connected using a flexible substrate, the width | variety of the part which does not become a light emission area among the edges of the light-emitting device 10 can be narrowed.

(実施例2)
 図9は、実施例2に係る電気機器の構成を示す図である。本実施例に係る電気機器は、以下の点を除いて実施例1に係る電気機器と同様の構成である。なお、本図において、引出配線130,132、引出配線160,162、及び封止膜210の図示は省略している。
(Example 2)
FIG. 9 is a diagram illustrating the configuration of the electrical device according to the second embodiment. The electrical device according to the present embodiment has the same configuration as the electrical device according to the first embodiment except for the following points. In the drawing, the drawing of the lead wires 130 and 132, the lead wires 160 and 162, and the sealing film 210 is omitted.

 まず、発光装置10は、封止樹脂層300を有している。封止樹脂層300は、例えば金型を用いて形成されている。そして封止樹脂層300の上には回路基板75が形成されている。回路基板75は、制御ICを有している。そして発光装置10の引出配線130,160は、ワイヤ30を介して回路基板75に接続している。 First, the light emitting device 10 has a sealing resin layer 300. The sealing resin layer 300 is formed using, for example, a mold. A circuit board 75 is formed on the sealing resin layer 300. The circuit board 75 has a control IC. The lead wires 130 and 160 of the light emitting device 10 are connected to the circuit board 75 via the wires 30.

 本実施例によっても、封止膜210には開口212が設けられているため、ワイヤ30の一端32を導体20に接続することができる。また、ワイヤ30の一端32は、開口212を覆っている。このため、封止膜210に開口212を設けても、封止膜210の封止能力が低下することを抑制できる。 Also in this embodiment, since the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20. One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.

(実施例3)
 図10は、実施例3に係る電気機器の構成を示す図である。本実施例に係る電気機器は、封止樹脂層300の代わりに封止板102を用いている点を除いて、実施例2に係る電気機器と同様の構成である。
(Example 3)
FIG. 10 is a diagram illustrating the configuration of the electrical device according to the third embodiment. The electrical device according to the present embodiment has the same configuration as the electrical device according to the second embodiment, except that the sealing plate 102 is used instead of the sealing resin layer 300.

 詳細には、封止板102の上には複数の電気部品70、例えば半導体パッケージが設けられている。そして封止板102の上には、導体20が設けられている。本実施例において、導体20は配線であり、電気部品70に接続している。そしてワイヤ30の一端32は引出配線130(又は引出配線160)に接続しており、ワイヤ30の他端は封止板102上の導体20に接続している。第1の導体20とワイヤ30の接続も、実施形態と同様の方法により確認できる。 Specifically, a plurality of electrical components 70 such as a semiconductor package are provided on the sealing plate 102. A conductor 20 is provided on the sealing plate 102. In this embodiment, the conductor 20 is a wiring and is connected to the electrical component 70. One end 32 of the wire 30 is connected to the lead wiring 130 (or the lead wiring 160), and the other end of the wire 30 is connected to the conductor 20 on the sealing plate 102. The connection between the first conductor 20 and the wire 30 can also be confirmed by the same method as in the embodiment.

 本実施例によっても、封止膜210には開口212が設けられているため、ワイヤ30の一端32を導体20に接続することができる。また、ワイヤ30の一端32は、開口212を覆っている。このため、封止膜210に開口212を設けても、封止膜210の封止能力が低下することを抑制できる。 Also in this embodiment, since the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20. One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.

(実施例4)
 図11は、実施例4に係る電気機器の構成を示す平面図である。図12は、この電気機器の斜視図である。本実施例に係る電気機器は、複数の発光装置10をマトリクス状に並べた構成を有している。隣接する発光装置10の隙間はなるべく狭くなっている。そして、発光装置10は、実施例2,3のいずれかに示した構成を有している。このため、発光装置10の縁のうち発光領域とならない部分の幅は狭くなっており、その結果、複数の発光装置10を同時に発光させても、発光装置10の境界は目立ちにくい。このため、複数の発光装置10を用いて一つの画像を表示することができる。
Example 4
FIG. 11 is a plan view illustrating the configuration of the electrical device according to the fourth embodiment. FIG. 12 is a perspective view of the electrical apparatus. The electric apparatus according to the present embodiment has a configuration in which a plurality of light emitting devices 10 are arranged in a matrix. The gap between adjacent light emitting devices 10 is as narrow as possible. The light emitting device 10 has the configuration shown in any one of the second and third embodiments. For this reason, the width | variety of the part which does not become a light emission area | region among the edges of the light-emitting device 10 is narrow, As a result, even if it makes several light-emitting devices 10 light-emit simultaneously, the boundary of the light-emitting device 10 is not conspicuous. For this reason, one image can be displayed using the plurality of light emitting devices 10.

 そして、マトリクス状に配置された発光装置10の近くには、外部接続部60が設けられている。外部接続部60は、電気機器を外部に接続する部分である。そして外部接続部60と、外部接続部60の隣に位置する発光装置10は、ワイヤ30を介して互いに接続している。また、複数の発光装置10のそれぞれは、その隣に位置する発光装置10と、ワイヤ30を介して電気的に接続している。このため、複数の発光装置10のうち外部接続部60の隣に位置しない発光装置10は、他の発光装置10を介して外部接続部60に電気的に接続することができる。 The external connection unit 60 is provided near the light emitting devices 10 arranged in a matrix. The external connection unit 60 is a part for connecting an electrical device to the outside. The external connection unit 60 and the light emitting device 10 located next to the external connection unit 60 are connected to each other through the wire 30. In addition, each of the plurality of light emitting devices 10 is electrically connected to the light emitting device 10 located adjacent thereto via a wire 30. Therefore, the light emitting device 10 that is not located next to the external connection unit 60 among the plurality of light emitting devices 10 can be electrically connected to the external connection unit 60 via the other light emitting devices 10.

 本実施例によっても、封止膜210には開口212が設けられているため、ワイヤ30の一端32を導体20に接続することができる。また、ワイヤ30の一端32は、開口212を覆っている。このため、封止膜210に開口212を設けても、封止膜210の封止能力が低下することを抑制できる。 Also in this embodiment, since the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20. One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.

 さらに、発光装置10の縁のうち発光領域とならない部分の幅を狭くすることができるため、複数の発光装置10を同時に発光させても、発光装置10の境界は目立ちにくい。従って、複数の発光装置10を用いて一つの画像を表示することができる。 Furthermore, since the width of the portion of the edge of the light emitting device 10 that does not become the light emitting region can be narrowed, even if a plurality of light emitting devices 10 emit light simultaneously, the boundaries of the light emitting devices 10 are not noticeable. Therefore, one image can be displayed using the plurality of light emitting devices 10.

(実施例5)
 図13は、実施例5に係る電気機器の構成を示す断面図である。本実施例に係る電気機器は、液晶表示部を有している。この液晶表示部は、透明基板54と透明基板56の間に液晶層52を設け、さらに液晶層52を封止層57で封止したものである。本実施例においては、導体20に形成された酸化膜、又は導体20を保護する保護膜(被覆膜)に開口212が設けられているため、ワイヤ30の一端32を導体20に接続することができる。また、ワイヤ30の一端32は、開口212を覆っている。このため、酸化膜又は保護膜に開口212を設けても、導体20の導電率が上昇するなどの物性が低下することを抑制できる。上述した酸化膜は導体20がAlなどの金属材料で形成されている場合には、酸化アルミニウム等の金属酸化膜である。上述した保護膜はNi、Mo、Nb等の無機材料で形成される。保護膜の例として、NiとMoの材料で形成された単一層、MoとNiで形成された単一層、NiとNbの材料で形成された単一層、MoとNbの材料で形成された単一層、又はこれらの単一層のうち2以上の層を積層した積層体であっても構わない。保護膜として機能させてもよく、導体20を覆うなどの他の機能を備えていても構わない。なお、酸化膜、保護膜及び開口212の図示は省略している。
(Example 5)
FIG. 13 is a cross-sectional view illustrating the configuration of the electrical device according to the fifth embodiment. The electric apparatus according to the present embodiment has a liquid crystal display unit. In the liquid crystal display unit, a liquid crystal layer 52 is provided between a transparent substrate 54 and a transparent substrate 56, and the liquid crystal layer 52 is sealed with a sealing layer 57. In this embodiment, since the opening 212 is provided in the oxide film formed on the conductor 20 or the protective film (coating film) that protects the conductor 20, one end 32 of the wire 30 is connected to the conductor 20. Can do. One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the oxide film or the protective film, the physical properties such as the increase in the conductivity of the conductor 20 can be suppressed. The oxide film described above is a metal oxide film such as aluminum oxide when the conductor 20 is formed of a metal material such as Al. The protective film described above is formed of an inorganic material such as Ni, Mo, or Nb. Examples of protective films include a single layer made of Ni and Mo material, a single layer made of Mo and Ni, a single layer made of Ni and Nb material, and a single layer made of Mo and Nb material. It may be a single layer or a laminate in which two or more of these single layers are laminated. You may make it function as a protective film and may provide other functions, such as covering the conductor 20. FIG. The illustration of the oxide film, protective film, and opening 212 is omitted.

 透明基板54の上には、電気部品70が実装されている。電気部品70は、液晶表示部の制御ICである。電気部品70は、透明基板54上に設けられた配線(導体20)に接続している。そして第1の導体20の端部は、ワイヤ30を介して外部接続端子72に接続している。電気部品70及びワイヤ30は、封止樹脂58によって封止されている。そして平面視において、外部接続端子72の端部は、封止樹脂58の外に位置している。 An electrical component 70 is mounted on the transparent substrate 54. The electrical component 70 is a control IC for the liquid crystal display unit. The electrical component 70 is connected to a wiring (conductor 20) provided on the transparent substrate 54. The end portion of the first conductor 20 is connected to the external connection terminal 72 through the wire 30. The electrical component 70 and the wire 30 are sealed with a sealing resin 58. In plan view, the end of the external connection terminal 72 is located outside the sealing resin 58.

 本実施例においても、封止膜210には開口212が設けられているため、ワイヤ30の一端32を導体20に接続することができる。また、ワイヤ30の一端32は、開口212を覆っている。このため、封止膜210に開口212を設けても、封止膜210の封止能力が低下することを抑制できる。 Also in this embodiment, since the opening 212 is provided in the sealing film 210, the one end 32 of the wire 30 can be connected to the conductor 20. One end 32 of the wire 30 covers the opening 212. For this reason, even if the opening 212 is provided in the sealing film 210, it can suppress that the sealing capability of the sealing film 210 falls.

 以上、図面を参照して実施形態及び実施例について述べたが、これらは本発明の例示であり、上記以外の様々な構成を採用することもできる。また、各実施形態に記載された各技術的事項を、他の実施形態に記載された技術的事項と組み合わせても構わなく、これら組み合わせについても本願の発明とする。 As mentioned above, although embodiment and the Example were described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable. In addition, each technical matter described in each embodiment may be combined with a technical matter described in another embodiment, and these combinations are also the invention of the present application.

Claims (10)

 基板と、ワイヤとを備え、
 前記基板には、導体、当該導体を覆う被覆体があり、
 前記ワイヤが前記被覆体の開口を通過して前記導体に接続することを特徴とするワイヤの接続構造。
A substrate and a wire,
The substrate has a conductor and a covering covering the conductor,
The wire connection structure, wherein the wire passes through the opening of the covering and connects to the conductor.
 前記導体側にある前記ワイヤの端部は、前記被覆体の開口を覆っていることを特徴とする請求項1に記載のワイヤの接続構造。 The wire connection structure according to claim 1, wherein an end portion of the wire on the conductor side covers an opening of the covering body.  前記導体側にある前記ワイヤの端部は、前記被覆体の開口全体を覆っていることを特徴とする請求項2に記載のワイヤの接続構造。 3. The wire connection structure according to claim 2, wherein an end of the wire on the conductor side covers the entire opening of the covering.  前記被覆体の開口は線状であることを特徴とする請求項3に記載のワイヤの接続構造。 The wire connection structure according to claim 3, wherein the opening of the covering is linear.  前記開口の周囲に位置する前記被覆体は、皺又は凹凸があることを特徴とする請求項4に記載のワイヤの接続構造。 5. The wire connection structure according to claim 4, wherein the covering located around the opening has a ridge or an unevenness.  前記基板の上には複数の前記導体が並列に配置されており、
 前記複数の導体のそれぞれに互いに異なる前記ワイヤが接続していることを特徴とする請求項5に記載のワイヤの接続構造。
A plurality of the conductors are arranged in parallel on the substrate,
6. The wire connection structure according to claim 5, wherein the different wires are connected to each of the plurality of conductors.
 前記導体は、前記基板に形成された有機EL素子に接続していることを特徴とする請求項6に記載のワイヤの接続構造。 The wire connection structure according to claim 6, wherein the conductor is connected to an organic EL element formed on the substrate.  前記導体は、前記ワイヤを介して電気部品に接続されていることを特徴とする請求項7に記載のワイヤの接続構造。 The wire connection structure according to claim 7, wherein the conductor is connected to an electrical component via the wire.  前記被覆体は封止膜であることを特徴とする請求項8に記載のワイヤの接続構造。 9. The wire connection structure according to claim 8, wherein the covering is a sealing film.  基板、前記基板上に形成された導体、及び前記導体を覆う被覆体を有する機能部品と、
 前記機能部品に接続するワイヤと、
を備え、
 前記ワイヤは、前記被覆体に設けられた開口を通過して前記導体に接続していることを特徴とする電気機器。
A functional component having a substrate, a conductor formed on the substrate, and a covering covering the conductor;
A wire connected to the functional component;
With
The electric device is characterized in that the wire is connected to the conductor through an opening provided in the covering.
PCT/JP2013/059827 2013-04-01 2013-04-01 Wire connection structure and electrical device Ceased WO2014162387A1 (en)

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