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WO2014059598A1 - 一种oled显示屏及其制造方法 - Google Patents

一种oled显示屏及其制造方法 Download PDF

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Publication number
WO2014059598A1
WO2014059598A1 PCT/CN2012/083024 CN2012083024W WO2014059598A1 WO 2014059598 A1 WO2014059598 A1 WO 2014059598A1 CN 2012083024 W CN2012083024 W CN 2012083024W WO 2014059598 A1 WO2014059598 A1 WO 2014059598A1
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WO
WIPO (PCT)
Prior art keywords
layer
substrate
oled
metal lead
via hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2012/083024
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English (en)
French (fr)
Inventor
魏鹏
余晓军
刘自鸿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Royole Technologies Co Ltd
Original Assignee
Shenzhen Royole Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Shenzhen Royole Technologies Co Ltd filed Critical Shenzhen Royole Technologies Co Ltd
Priority to PCT/CN2012/083024 priority Critical patent/WO2014059598A1/zh
Priority to CN201280001473.2A priority patent/CN104041186A/zh
Publication of WO2014059598A1 publication Critical patent/WO2014059598A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • H10K59/1275—Electrical connections of the two substrates

Definitions

  • the present invention belongs to the field of display technologies, and in particular, to an OLED display screen and a method of fabricating the same.
  • OLED Organic electroluminescence
  • TFT Thin Film Transistor
  • the aperture ratio is low, so that high-density, high-resolution, high-brightness display is difficult to achieve; at the same time, a low aperture ratio makes the OLED The operating current of the device is increased, which greatly reduces the lifetime of the luminescent pixel. If OLED The use of a top-emitting structure requires the preparation of transparent or translucent electrodes, thereby increasing the complexity and difficulty of the preparation process and reducing the yield of production.
  • OLED display screen in the prior art, which respectively prepares an OLED light emitting substrate and a TFT driving substrate, in an OLED a light-emitting substrate is provided with a contact partition wall, and a cathode on the light-emitting substrate is taken out by contacting the partition wall, and the cathode on the light-emitting substrate and the TFT are The source (or drain) electrode on the driving substrate is taken out, and the alignment driving is realized by the manner in which the metal hard contact is connected in the opposite direction.
  • This docking technology has the following disadvantages: First, the technology is a direct hard contact of metal, for large screen, high resolution The OLED display makes it difficult to directly and hardly contact the light-emitting unit and the driving unit of all the pixels.
  • the alignment accuracy is difficult to control, the assembly is difficult, and the yield is reduced.
  • the technology Need to be in A large-area contact partition wall is prepared on the OLED substrate to realize the docking of the light-emitting substrate and the driving substrate, thereby sacrificing a large-area light-emitting area, and the high aperture ratio of the display screen cannot be realized, LG
  • the company adopts the above technology, and its aperture ratio is only 50 ⁇ 60%.
  • the long-term stability through direct hard contact of metal is poor. Due to the difference in expansion coefficient of different materials, after a long time temperature change, the contact between the light-emitting substrate and the drive substrate is easily desorbed, causing pixel failure, thereby affecting the display. The service life. Therefore, it is necessary to provide a new assembly scheme to overcome the above problems.
  • the object of the present invention is to provide an OLED
  • the display is designed to increase the aperture ratio, reduce assembly difficulty, and improve the stability of long-term use.
  • the present invention is achieved by an OLED display comprising an OLED substrate and a TFT driving substrate,
  • the OLED substrate includes a transparent substrate, an anode layer, an organic material layer and a cathode layer which are sequentially laminated; the cathode layer and the TFT A source or a drain of the driving substrate is respectively taken out through the first metal wiring layer and the second metal wiring layer, and the first metal wiring layer and the second metal wiring layer are aligned by a conductive film.
  • Another object of the present invention is to provide a method of fabricating an OLED display comprising the steps of:
  • an OLED substrate including a laminated transparent substrate, an anode layer, an organic material layer, and a cathode layer, and in the OLED a first metal lead layer is disposed on the substrate, and the first metal lead layer is electrically connected to the cathode layer;
  • TFT driving substrate including a gate, a source, and a drain
  • second metal lead layer is disposed on the driving substrate, and the second metal wiring layer is electrically connected to the source or the drain;
  • the invention is assembled by a separate OLED substrate and a TFT driving substrate, and the TFT driving circuit and the OLED are assembled.
  • the illuminating pixels need not be disposed on the same substrate, so that the effective area of the illuminating pixels is increased, and a relatively complicated TFT driving circuit can be prepared without affecting the OLED pixel area, and the OLED is greatly improved.
  • the aperture ratio is displayed.
  • the OLED substrate and the TFT driving substrate are assembled and docked, and the bottom light emitting display with high aperture ratio is realized, thereby avoiding the fabrication of the top emitting OLED.
  • the process brought by the substrate is complicated and the yield is low; most importantly, the conductive film is used to dock the OLED substrate and the TFT driving substrate, thereby avoiding the use of the contact partition, thereby increasing the OLED.
  • the effective area of the illuminating pixel improves the display aperture ratio; and can effectively improve the effective contact between the OLED illuminating pixel and the TFT driving circuit, and overcomes the alignment caused by the metal hard contact in the prior art.
  • the difficulty is difficult to control, the assembly is difficult, and the stability of the docking is poor, so that the service life of the display is longer; in addition, the use of the conductive film to dock the substrate is also beneficial to the production of the flexible display.
  • FIG. 1 is a first structural schematic view of an OLED display screen of the present invention
  • FIG. 2 is a first structural schematic view of an OLED substrate in an OLED display of the present invention.
  • FIG. 3 is a schematic view showing a second structure of an OLED substrate in an OLED display screen of the present invention.
  • FIG. 4 is a first schematic structural view of a TFT driving substrate in the OLED display of the present invention.
  • FIG. 5 is a schematic view showing a second structure of a TFT driving substrate in the OLED display panel of the present invention.
  • FIG. 6 is a second schematic structural view of an OLED display screen of the present invention.
  • FIG. 7 is a third structural schematic view of an OLED display screen of the present invention.
  • FIG. 8 is a fourth structural schematic view of an OLED display screen of the present invention.
  • FIG. 9 is a fifth structural schematic view of an OLED display screen of the present invention.
  • Figure 10 is a flow chart showing the fabrication of the OLED display of the present invention.
  • FIG. 1 shows an OLED provided by an embodiment of the present invention.
  • the OLED display screen provided in this embodiment includes an OLED substrate 1 and a TFT driving substrate 2 , and an OLED substrate 1 comprising a transparent substrate 11 , an anode layer 12 , an organic material layer 13 and a cathode layer 14 which are sequentially laminated, and a buffer layer may be further disposed between the transparent substrate 11 and the anode layer 12 15 , buffering and protecting the anode layer 12 , the organic material layer 13 and the cathode layer 14 .
  • the TFT driving substrate 2 is provided with a driving circuit including at least a gate electrode 21 and a source electrode 22 And drain 23 .
  • the OLED substrate 1 is provided with a first metal lead layer 3, and the first metal lead layer 3 is electrically connected to the cathode layer 14, and the cathode layer 14 is taken out.
  • TFT A second metal lead layer 4 is disposed on the driving substrate 2, and the second metal wiring layer 4 is electrically connected to the source 22 or the drain 23 of the TFT driving substrate 2 to connect the source 22 or the drain 23 Lead out.
  • the first metal wiring layer 3 and the second metal wiring layer 4 are aligned by a conductive film 5 (preferably an anisotropic conductive film) to complete the OLED substrate 1 and the TFT driving substrate 2 Assembly to get an OLED display.
  • the present invention separately provides a metal wiring layer on the OLED substrate 1 and the TFT driving substrate 2, and is provided with a metal wiring layer.
  • the OLED substrate 1 and the TFT driving substrate 2 are docked by the conductive adhesive film 5, and have the following advantages:
  • the display screen is composed of a separate OLED substrate 1 and a separate TFT drive substrate 2, TFT
  • the driving circuit is not on the same substrate as the OLED illuminating pixel, so that the effective area of the illuminating pixel is increased, and a relatively complicated TFT driving circuit can be prepared without affecting the OLED pixel area, and the OLED pixel area is greatly improved.
  • OLED display aperture ratio the aperture ratio can be increased to 90%;
  • the conductive film 5 is used to interface the OLED substrate 1 with the TFT driving substrate 2 , avoiding the use of the contact partition wall, thereby increasing the effective area of the OLED illuminating pixel, further improving the display aperture ratio; and, using the conductive adhesive film 5 to dock the substrate, can effectively improve the OLED Effective contact between the illuminating pixel and the TFT driving circuit overcomes the alignment caused by the hard contact of the metal in the prior art The difficulty is difficult to control, the assembly is difficult, and the stability of the docking is poor, so that the service life of the display is longer; in addition, the use of the conductive film to dock the substrate is also beneficial to the production of the flexible display.
  • the illumination type of the OLED substrate 1 may be RGB independent pixel illumination or white light OLED. If the color filter is used for illumination, if the RGB independent pixel is used directly, there is no need to set the color filter. When it is desired to provide a color filter, it is preferably disposed between the transparent substrate and the buffer layer.
  • the first metal wiring layer 3 and the cathode layer 14 Electrical connections can be made directly or indirectly.
  • the first metal wiring layer 3 can be directly applied to the surface of the cathode layer 14 and the cathode layer 14
  • the electrical connection can be made directly, or it can be integrated with the cathode layer 14.
  • a first package and a buffer layer 16 may be disposed on the surface of the cathode layer 14. And opening at least one first via hole 17 therein, then filling the first via hole 17 with a conductive medium, and forming a first metal lead layer on the surface of the first package and the buffer layer 16 Wherein, the conductive medium and the material of the first metal wiring layer 3 may be the same. Specifically, the first metal lead layer 3 can be made to fill the first via hole 17 with the metal material, thereby completing the first via hole 17 at the same time. The filling and fabrication of the first metal lead layer 3.
  • the conductive medium is in contact with the cathode layer 14, and the indirect electrical connection between the cathode layer 14 and the first metal wiring layer 3 is achieved, and the cathode layer 14 is further Lead out. Since the first package and the buffer layer 16 are disposed on the surface of the cathode layer 14, the protection effect on the OLED light-emitting structure is enhanced, which is advantageous for enhancing the stability of the OLED substrate.
  • the TFT driving substrate 2 may include a supporting substrate 24 provided on the supporting substrate 24.
  • the TFT unit (including the gate electrode 21, the source electrode 22, and the drain electrode 23) is provided with a second package and a buffer layer 25 on the support substrate 24 for protecting the TFT unit.
  • the second metal wiring layer 4 is electrically connected to the source 22 or the drain 23 .
  • at least one second via hole 26 and a second via hole 26 are opened from the second package and the buffer layer 25 to the source 22 or the drain 23 .
  • the conductive metal is filled in, and the second metal wiring layer 4 is disposed on the surface of the second package and the buffer layer 25.
  • the conductive medium and the second metal wiring layer 4 may be made of the same material.
  • the second metal lead layer 4 passes through the second via hole
  • the conductive medium in 26 contacts source 22 or drain 23, which in turn leads source 22 or drain 23.
  • the TFT unit may specifically adopt a bottom gate (the gate 21 is close to the support substrate 24) or a top gate (the gate 21). Far from the support substrate 24, the source 22 and the drain 23 are close to the support substrate 24) structure.
  • the TFT unit is the gate electrode 21 and the semiconductor layer from the support substrate 24 in this order. 27, the insulating layer 28, the source 22 and the drain 23, at this time, the second via hole 26 penetrates the second package and the buffer layer 25, as shown in FIG.
  • the TFT unit self-supporting substrate 24 is the source 22 and the drain 23, the semiconductor layer 27, the insulating layer 28, and the gate 21, and the second via hole 26 penetrates the second package and the buffer layer 25 and the insulating layer 28 , as shown in Figure 4.
  • the embodiment further provides a structural diagram of several OLED display screens:
  • Figure 1 is a first structural diagram of an OLED display in which the cathode layer 14 of the OLED substrate is directly connected to the first metal wiring layer. 3 phase contact, the TFT unit adopts a bottom gate structure, and the second metal wiring layer 4 is electrically connected to the drain 23 of the TFT unit through the second via hole 26, the first metal wiring layer 3 and the second metal wiring layer 4 Through the alignment of the anisotropic conductive film 5, the alignment assembly of the OLED substrate and the TFT driving substrate is realized.
  • Figure 6 shows the second structure of the OLED display. Unlike the structure shown in Figure 1, the TFT is The unit uses a top gate structure.
  • FIG. 7 is a third structural diagram of an OLED display in which a cathode layer 14 of an OLED substrate passes through a first via hole 17 Electrically connected to the first metal lead layer 3, the TFT unit adopts a top gate structure, and the second metal wiring layer 4 is still electrically connected to the drain 23 of the TFT unit through the second via hole 26, the first metal wiring layer 3 is aligned with the second metal lead layer 4 through the anisotropic conductive film 5.
  • Figure 8 shows the fourth structure of the OLED display. Unlike the structure shown in Figure 7, the TFT is The unit uses a bottom gate structure.
  • Figure 9 shows the fifth structure of the OLED display. Unlike the structure shown in Figure 7, the transparent substrate 11 and the buffer layer. A color filter 18 is provided between the 15th.
  • the present invention is not limited to the above five structures as long as it passes through the first metal wiring layer 3
  • the second metal lead layer 4 respectively extracts the cathode layer 14 of the OLED substrate 1 and the drain 22 or the source 23 of the TFT driving substrate 2, and is connected by a conductive film 5 OLED displays are all within the scope of the present invention.
  • the following provides a method for fabricating the OLED display panel of the present invention. Referring to FIG. 8, the method mainly includes the following steps:
  • step S101 an OLED substrate including a transparent substrate, an anode layer, an organic material layer, and a cathode layer disposed in a stack is fabricated, and A first metal wiring layer is disposed on the OLED substrate, and the first metal wiring layer is electrically connected to the cathode layer.
  • step S101 it can be implemented by the following methods:
  • a transparent substrate is selected, and an anode layer, an organic material layer and a cathode layer are sequentially laminated on the transparent substrate;
  • the first metal wiring layer is directly disposed on the surface of the cathode layer, and the first metal wiring layer and the cathode layer are directly electrically connected. It is also possible to integrally form the first metal wiring layer and the cathode layer.
  • a buffer layer is formed on the transparent substrate before the anode layer, the organic material layer and the cathode layer are formed, and then the anode layer is disposed on the buffer layer, and the anode layer is
  • the light-emitting unit composed of the organic material layer and the cathode layer serves as an effective buffering and protection function.
  • the OLED substrate is white OLED At this time, it is also necessary to provide a color filter film before the anode layer is disposed, and the color filter film is preferably disposed between the buffer layer and the anode layer.
  • step S101 the following method can be implemented:
  • a transparent substrate is selected, and an anode layer, an organic material layer and a cathode layer are sequentially laminated on the transparent substrate;
  • a first package and a buffer layer with a first via hole are disposed on the surface of the cathode layer;
  • the first via hole is filled with the conductive medium, and the first metal lead layer is disposed on the surface of the first package and the buffer layer, so that the first metal lead layer passes through the conductive medium and the cathode in the first via hole.
  • the layers are in contact.
  • a metal material may be disposed on the surface of the first package and the buffer layer to fill the first via hole, and a first metal lead layer is formed on the surface of the first package and the buffer layer to facilitate fabrication.
  • the first metal lead layer and the OLED The cathode layer of the substrate is indirectly electrically connected through the first via hole, and on the one hand, the electrical connection between the first metal lead layer and the cathode layer is ensured, and on the other hand, the protection effect on the OLED substrate can be enhanced.
  • a TFT driving substrate including a gate, a source, and a drain is fabricated, and is in the TFT a second metal lead layer is disposed on the driving substrate, and the second metal wiring layer is electrically connected to the source or the drain;
  • step S102 can be implemented as follows:
  • a support substrate is selected, and a TFT unit including a gate, a source, and a drain is prepared on the support substrate, in the TFT Preparing a second package and a buffer layer outside the unit;
  • a second via hole is opened from the second package and the buffer layer to the source or the drain;
  • the second via hole is filled with a conductive medium, and a second metal lead layer is disposed on the surface of the second package and the buffer layer, so that the second metal lead layer passes through the conductive medium and the source in the second via hole
  • the pole or drain is electrically connected.
  • This step can also be achieved by laying a metal material on the surface of the second package and the buffer layer, filling the metal material with the second via hole and simultaneously forming the second metal wiring layer.
  • the source or the drain of the TFT driving substrate can be taken out through the second metal wiring layer for the OLED
  • the cathode layer of the substrate is electrically connected.
  • step S103 a conductive paste film is provided on the surface of the first metal wiring layer and/or the second metal wiring layer.
  • the material of the conductive film is preferably an anisotropic conductive paste.
  • an anisotropic conductive paste may be disposed on the surface of any one of the first metal wiring layer and the second metal wiring layer, as long as the two metal wiring layers can be butted together, of course, the first and the A conductive adhesive film is disposed on both of the metal lead layers.
  • step S104 the first metal lead layer and the second metal lead layer are butted through the conductive adhesive film to complete the OLED substrate and the TFT.
  • the alignment of the drive substrate is assembled.
  • step S104 the OLED substrate and the cathode layer and the TFT The electrical connection between the source or the drain of the drive substrate is achieved, that is, the assembly of the OLED display screen is completed.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Description

一种OLED显示屏及其制造方法 技术领域
本发明属于显示技术领域，特别涉及一种 OLED 显示屏及其制造方法。
背景技术
OLED （有机电致发光）显示因其主动发光、超薄、低电压、快速响应、高亮度、宽视角等优点，已成为一种新兴的显示技术，多款大屏幕、高清 OLED 显示屏产品已经进入平面显示市场。由于 OLED 需要电流驱动，因此每个子像素对应的 TFT （薄膜晶体管）电路都需要两个以上的 TFT 元件和存储电容器。由于常用的 OLED 为底发光器件，开口率很低，因此使得高密度、高分辨率、高亮度显示较难实现；同时，低开口率使 OLED 器件工作电流增大，大幅度的降低了发光像素的寿命。若 OLED 采用顶发光结构，则需要制备透明或半透明电极，从而增大制备工艺的复杂程度和难度，降低了生产良品率。
现有技术中存在一种 OLED 显示屏，其分别制备 OLED 发光基板和 TFT 驱动基板，在 OLED 发光基板上设置接触隔壁，通过接触隔壁将发光基板上的阴极引出，并使发光基板上的阴极与将 TFT 驱动基板上源（或漏）电极引出，通过这种金属硬接触对位相连的方式实现对位驱动。这种对接技术存在以下缺点：第一、该技术为金属直接硬接触，对于大屏幕、高分辨率的 OLED 显示屏，使所有像素对应的发光单元和驱动单元一一紧密、低电阻的直接硬接触非常困难，对位精度很难控制，组装难度较大，也使良品率下降；第二、该技术需要在 OLED 基板上制备较大面积的接触隔壁来实现发光基板和驱动基板的对接，因而牺牲了大面积的发光区域，无法实现显示屏高开口率， LG 公司采用上述技术，其开口率仅有 50~60% ；第三、通过金属直接硬接触的长期稳定性较差，由于不同材料的膨胀系数差异，长时间温度变化后，发光基板和驱动基板间的接触容易脱附而引起像素失效，进而影响显示屏的使用寿命。因此，有必要提供一种新的组装方案，以克服上述问题。
 技术问题
本发明的目的 在于提供一种 OLED 显示屏，旨在提高其开口率、降低组装难度，并改善其长期使用的稳定性。
技术解决方案
本发明是这样实现的， 一种 OLED 显示屏，包括 OLED 基板及 TFT 驱动基板，所述 OLED 基板包括依次叠层设置的透明基板、阳极层、有机材料层及阴极层；所述阴极层和所述 TFT 驱动基板的源极或漏极分别通过第一金属引线层和第二金属引线层引出，且所述第一金属引线层和 第二金属引线层通过导电胶膜对位连接。
本发明的另一目的 在于提供 一种制作 OLED 显示屏的方法，包括下述步骤：
制作包括叠层设置的透明基板、阳极层、有机材料层及阴极层的 OLED 基板，并在所述 OLED 基板上设置第一金属引线层，并使所述第一金属引线层与所述阴极层电连接；
制作包括栅极、源极和漏极的 TFT 驱动基板，并在所述 TFT 驱动基板上设置第二金属引线层，并使所述第二金属引线层与所述源极或漏极电连接；
在所述第一金属引线层和 / 或第二金属引线层的表面设置导电胶膜；
将所述第一金属引线层和第二金属引线层通过所述导电胶膜对接，完成所述 OLED 基板和 TFT 驱动基板的对位组装。
 有益效果
本发明由独立的 OLED 基板与 TFT 驱动基板对接组装， TFT 驱动电路与 OLED 发光像素不需设在同一基板上，使发光像素的有效区域面积增大，并且可以制备较复杂的 TFT 驱动电路而不影响 OLED 像素面积，大幅度的提高了 OLED 显示开口率；另一方面， OLED 基板与 TFT 驱动基板为组装对接，实现了高开口率的底发光显示，避免了制作顶发光 OLED 基板带来的工艺复杂和良品率低等问题；最重要的是，使用导电胶膜对接 OLED 基板与 TFT 驱动基板，避免了接触隔壁的使用，从而增大了 OLED 发光像素的有效面积，提高了显示开口率；并且可以有效的提高 OLED 发光像素和 TFT 驱动电路间的有效接触，克服了现有技术中金属硬接触导致的对位 精度难以控制、组装难度大，及对接稳定性差的问题，使显示屏的使用寿命更长；另外，采用导电胶膜对接基板，还有利于柔性显示屏的制作。
附图说明
图 1 是本发明 OLED 显示屏的第一种结构示意图；
图 2 是本发明 OLED 显示屏中 OLED 基板的第一种结构示意图；
图 3 是本发明 OLED 显示屏中 OLED 基板的第二种结构示意图；
图 4 是本发明 OLED 显示屏中 TFT 驱动基板的第一种结构示意图；
图 5 是本发明 OLED 显示屏中 TFT 驱动基板的第二种结构示意图；
图 6 是本发明 OLED 显示屏的第二种结构示意图；
图 7 是本发明 OLED 显示屏的第三种结构示意图；
图 8 是本发明 OLED 显示屏的第四种结构示意图；
图 9 是本发明 OLED 显示屏的第五种结构示意图；
图 10 是本发明 OLED 显示屏的制作流程图。
 本发明的实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
以下通过具体实施例对本发明进行更加详细的说明。
图 1 示出了本发明实施例提供的 OLED 显示屏的第一种结构示意图，为了便于说明，仅示出了与本实施例相关的部分。
本实施例提供的 OLED 显示屏包括 OLED 基板 1 及 TFT 驱动基板 2 ， OLED 基板 1 包括依次叠层设置的透明基板 11 、阳极层 12 、有机材料层 13 及阴极层 14 ，在透明基板 11 和阳极层 12 之间还可以进一步设置一缓冲层 15 ，对阳极层 12 、有机材料层 13 及阴极层 14 起到缓冲及保护作用。 TFT 驱动基板 2 设有驱动电路，其至少包括栅极 21 、源极 22 和漏极 23 。其中， OLED 基板 1 上设有第一金属引线层 3 ，该第一金属引线层 3 与阴极层 14 进行电连接，将阴极层 14 引出。 TFT 驱动基板 2 上设有第二金属引线层 4 ，并且第二金属引线层 4 与 TFT 驱动基板 2 的源极 22 或漏极 23 进行电连接，将源极 22 或漏极 23 引出。第一金属引线层 3 和 第二金属引线层 4 通过导电胶膜 5 （优选各向异性导电胶膜）对位连接，完成 OLED 基板 1 和 TFT 驱动基板 2 的组装，获得 OLED 显示屏。
本发明分别在 OLED 基板 1 和 TFT 驱动基板 2 上设置一层金属引线层，并将设有金属引线层的 OLED 基板 1 和 TFT 驱动基板 2 通过导电胶膜 5 实现对接，具有以下优点：
首先，该显示屏由独立的 OLED 基板 1 和独立的 TFT 驱动基板 2 对接组成， TFT 驱动电路与 OLED 发光像素不在同一基板上，使发光像素的有效区域面积增大，并且可以制备较复杂的 TFT 驱动电路而不影响 OLED 像素面积，大幅度的提高了 OLED 显示开口率，开口率可提高到 90% ；
其次，由于 OLED 基板 1 与 TFT 驱动基板 2 为组装对接，实现了高开口率的底发光显示，避免了制作顶发光 OLED 基板带来的工艺复杂和良品率低等问题；
更重要的是，使用导电胶膜 5 对接 OLED 基板 1 与 TFT 驱动基板 2 ，避免了接触隔壁的使用，从而增大了 OLED 发光像素的有效面积，进一步提高了显示开口率；并且，使用导电胶膜 5 对接基板，可以有效的提高 OLED 发光像素和 TFT 驱动电路间的有效接触，克服了现有技术中金属硬接触导致的对位 精度难以控制、组装难度大，及对接稳定性差的问题，使显示屏的使用寿命更长；另外，采用导电胶膜对接基板，还有利于柔性显示屏的制作。
在本实施例中， OLED 基板 1 的发光类型可以是 RGB 独立像素发光，也可以是白光 OLED 配合彩色滤膜发光，若直接采用 RGB 独立像素发光，则不需设置彩色滤膜。当需要设置彩色滤膜时，其优选设置于透明基板与缓冲层之间。
在本实施例中，第一金属引线层 3 与阴极层 14 之间可以直接或间接进行电连接。作为本实施例的一种实现方式，如图 2 ，第一金属引线层 3 可直接敷设于阴极层 14 的表面，与阴极层 14 直接进行电连接，也可同与阴极层 14 为一体结构。
作为本实施例的另一种实现方式，如图 3 ，可以在阴极层 14 的表面设置第一封装及缓冲层 16 ，并在其中开设至少一个第一导通孔 17 ，然后在第一导通孔 17 中填充导电介质，并在第一封装及缓冲层 16 的表面形成第一金属引线层 3 ，其中，导电介质与第一金属引线层 3 的材料可以相同。具体可以在制作第一金属引线层 3 时使金属材料充满第一导通孔 17 ，进而同时完成第一导通孔 17 的填充和第一金属引线层 3 的制作。导电介质与阴极层 14 相接触，实现了阴极层 14 与第一金属引线层 3 的间接电连接，进而将阴极层 14 引出。由于在阴极层 14 的表面设置了第一封装及缓冲层 16 ，加强了对 OLED 发光结构的保护作用，有利于增强 OLED 基板的稳定性。
进一步参考附图 4 ， TFT 驱动基板 2 可以包括一支撑基板 24 ，在支撑基板 24 上设有 TFT 单元（包括栅极 21 、源极 22 、漏极 23 ），在支撑基板 24 上设置有第二封装及缓冲层 25 ，用于保护 TFT 单元。为了使第二金属引线层 4 和源极 22 或漏极 23 电连接，本实施例自第二封装及缓冲层 25 向源极 22 或漏极 23 开设了至少一个第二导通孔 26 ，第二导通孔 26 中填充有导电介质，第二金属引线层 4 即设置于第二封装及缓冲层 25 的表面，导电介质与第二金属引线层 4 可采用相同材料。第二金属引线层 4 通过第二导通孔 26 中的导电介质与源极 22 或漏极 23 相接触，进而将源极 22 或漏极 23 引出。
进一步的，上述 TFT 单元具体可采用底栅极（栅极 21 靠近支撑基板 24 ）或顶栅极（栅极 21 远离支撑基板 24 ，源极 22 和漏极 23 靠近支撑基板 24 ）结构。当采用底栅极结构时， TFT 单元自支撑基板 24 起依次为栅极 21 、半导体层 27 、绝缘层 28 、源极 22 和漏极 23 ，此时第二导通孔 26 贯穿第二封装及缓冲层 25 ，如图 5 。若采用顶栅极结构， TFT 单元自支撑基板 24 起依次为源极 22 和漏极 23 、半导体层 27 、绝缘层 28 、栅极 21 ，此时第二导通孔 26 贯穿第二封装及缓冲层 25 和绝缘层 28 ，如图 4 。
根据以上内容，本实施例进一步提供几种 OLED 显示屏的结构图：
图 1 为 OLED 显示屏的第一种结构图，其中， OLED 基板的阴极层 14 直接与第一金属引线层 3 相接触， TFT 单元采用底栅极结构，第二金属引线层 4 通过第二导通孔 26 与 TFT 单元的漏极 23 电连接，第一金属引线层 3 与第二金属引线层 4 通过各向异性导电胶膜 5 对位贴合，实现 OLED 基板与 TFT 驱动基板的对位组装。
图 6 为 OLED 显示屏的第二种结构图，与图 1 所示结构不同的是， TFT 单元采用顶栅极结构。
图 7 为 OLED 显示屏的第三种结构图，其中， OLED 基板的阴极层 14 通过第一导通孔 17 与第一金属引线层 3 电连接， TFT 单元采用顶栅极结构，第二金属引线层 4 仍通过第二导通孔 26 与 TFT 单元的漏极 23 电连接，第一金属引线层 3 与第二金属引线层 4 通过各向异性导电胶膜 5 对位贴合。
图 8 为 OLED 显示屏的第四种结构图，与图 7 所示结构不同的是， TFT 单元采用底栅极结构。
图 9 为 OLED 显示屏的第五种结构图，与图 7 所示结构不同的是，在透明基板 11 与缓冲层 15 之间设有彩色滤膜 18 。
以上仅提供本发明的五种具体结构，但本发明不仅限于上述五种结构，只要通过第一金属引线层 3 和第二金属引线层 4 分别将 OLED 基板 1 的阴极层 14 和 TFT 驱动基板 2 的漏极 22 或源极 23 引出，并通过导电胶膜 5 对位连接的 OLED 显示屏，均在本发明的保护范围内。
以下提供制作本发明所述 OLED 显示屏的方法，参考附图 8 ，该方法主要包括下述步骤：
在步骤 S101 中，制作包括叠层设置的透明基板、阳极层、有机材料层及阴极层的 OLED 基板，并在 OLED 基板上设置第一金属引线层，并使第一金属引线层与阴极层电连接。
作为步骤 S101 的第一种实现方式，可以通过下述方法实现：
第一步，选取一透明基板，在透明基板上依次叠层设置阳极层、有机材料层、阴极层；
第二步，在阴极层的表面直接设置第一金属引线层，使第一金属引线层与阴极层直接进行电连接。也可以使第一金属引线层与阴极层一体成型。
进一步的，在上述第一步中，优选在制作阳极层、有机材料层和阴极层之前先在透明基板之上制作一缓冲层，然后将阳极层设置于缓冲层之上，对由阳极层、有机材料层和阴极层组成的发光单元起到有效的缓冲、保护作用。
进一步的，当该 OLED 基板采用白光 OLED 时，还需在设置阳极层之前先设置彩色滤膜，该彩色滤膜优选设于缓冲层与阳极层之间。
作为步骤 S101 的第二种实现方式，可以通过下述方法实现：
第一步，选取一透明基板，在透明基板上依次叠层设置阳极层、有机材料层、阴极层；
第二步，在阴极层的表面设置带有第一导通孔的第一封装及缓冲层；
第三步，向第一导通孔中填充导电介质，同时在第一封装及缓冲层的表面设置第一金属引线层，使第一金属引线层通过第一导通孔中的导电介质与阴极层相接触。
在该步骤中，具体可以在第一封装及缓冲层的表面敷设金属材料，使金属材料充满第一导通孔，同时在第一封装及缓冲层的表面形成第一金属引线层，以方便制作。
在第二种实现方式中，也可在 OLED 基板中设置缓冲层和彩色滤膜，其具体位置同上所述，不再赘述。
在第二种实现方式中，第一金属引线层与 OLED 基板的阴极层通过第一导通孔进行间接电连接，一方面保证第一金属引线层与阴极层的电性连接，另一方面也可以增强对 OLED 基板的保护作用。
在步骤 S102 中，制作包括栅极、源极和漏极的 TFT 驱动基板，并在 TFT 驱动基板上设置第二金属引线层，并使第二金属引线层与源极或漏极电连接；
具体的，步骤 S102 可以这样实现：
第一步，选取一支撑基板，在支撑基板上制备包括有栅极、源极和漏极的 TFT 单元，在 TFT 单元之外制备第二封装及缓冲层；
第二步，自第二封装及缓冲层向源极或漏极开设第二导通孔；
第三步，向第二导通孔中填充导电介质，并在第二封装及缓冲层的表面设置第二金属引线层，使第二金属引线层通过第二导通孔中的导电介质与源极或漏极电连接。
该步骤也可以通过在第二封装及缓冲层的表面敷设金属材料，使金属材料充满第二导通孔并同时形成第二金属引线层的方式实现。
通过上述方法，可通过第二金属引线层将 TFT 驱动基板的源极或漏极引出，用于和 OLED 基板的阴极层进行电连接。
在步骤 S103 中，在第一金属引线层和 / 或第二金属引线层的表面设置导电胶膜。
在此步骤中，导电胶膜的材料优选各向异性导电胶。并且，可以在第一金属引线层和第二金属引线层中任一个的表面设置各向异性导电胶，只要能够将两层金属引线层对接起来即可，当然，也不排除在第一、第二金属引线层上均设置导电胶膜。
在步骤 S104 中，将第一金属引线层和第二金属引线层通过导电胶膜对接，完成 OLED 基板和 TFT 驱动基板的对位组装。
通过步骤 S104 ， OLED 基板和阴极层和 TFT 驱动基板的源极或漏极之间实现了电连接，即完成了 OLED 显示屏的组装。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (13)

  1. 一种 OLED 显示屏，其特征在于，包括 OLED 基板及 TFT 驱动基板，所述 OLED 基板包括依次叠层设置的透明基板、阳极层、有机材料层及阴极层；所述阴极层和所述 TFT 驱动基板的源极或漏极分别通过第一金属引线层和第二金属引线层引出，且所述第一金属引线层和 第二金属引线层通过导电胶膜对位连接。
  2. 如权利要求 1 所述的 OLED 显示屏，其特征在于，所述导电胶膜为各向异性导电胶膜。
  3. 如权利要求 1 所述的 OLED 显示屏，其特征在于，所述阳极层与所述透明基板之间设有缓冲层。
  4. 如权利要求 1 、 2 或 3 所述的 OLED 显示屏，其特征在于，所述第一金属引线层直接附着于所述阴极层的表面或与所述阴极层为一体结构。
  5. 如权利要求 1 、 2 或 3 所述的 OLED 显示屏，其特征在于，所述阴极层与所述第一金属引线层之间设有第一封装及缓冲层，所述第一封装及缓冲层设有填充有导电介质的第一导通孔，所述第一金属引线层通过所述第一导通孔中的导电介质与所述阴极层电连接。
  6. 如权利要求 1 、 2 或 3 所述的 OLED 显示屏，其特征在于，所述 TFT 驱动基板包括支撑基板、设置于所述支撑基板上的包括有栅极、源极和漏极的 TFT 单元，以及设于所述 TFT 单元之外的第二封装及缓冲层；
    自所述第二封装及缓冲层到所述源极或漏极之间开设有第二导通孔，且所述第二导通孔中填充有导电介质；
    所述第二金属引线层设置于所述第二封装及缓冲层的表面，通过所述第二导通孔中的导电介质与所述源极或漏极电连接。
  7. 一种制作 OLED 显示屏的方法，其特征在于，包括下述步骤：
    制作包括叠层设置的透明基板、阳极层、有机材料层及阴极层的 OLED 基板，并在所述 OLED 基板上设置第一金属引线层，并使所述第一金属引线层与所述阴极层电连接；
    制作包括栅极、源极和漏极的 TFT 驱动基板，并在所述 TFT 驱动基板上设置第二金属引线层，并使所述第二金属引线层与所述源极或漏极电连接；
    在所述第一金属引线层和 / 或第二金属引线层的表面设置导电胶膜；
    将所述第一金属引线层和第二金属引线层通过所述导电胶膜对接，完成所述 OLED 基板和 TFT 驱动基板的对位组装。
  8. 如权利要求 7 所述的方法，其特征在于，所述制作包括叠层设置的透明基板、阳极层、有机材料层及阴极层的 OLED 基板，并在所述 OLED 基板上设置第一金属引线层，并使所述第一金属引线层与所述阴极层电连接的步骤具体为：
    选取一透明基板，在所述透明基板上依次叠层设置阳极层、有机材料层、阴极层；
    在所述阴极层的表面直接设置第一金属引线层，使所述第一金属引线层与所述阴极层电连接。
  9. 如权利要求 7 所述的方法，其特征在于，所述制作包括叠层设置的透明基板、阳极层、有机材料层及阴极层的 OLED 基板，并在所述 OLED 基板上设置第一金属引线层，并使所述第一金属引线层与所述阴极层电连接的步骤具体为：
    选取一透明基板，在所述透明基板上依次叠层设置阳极层、有机材料层、阴极层；
    在所述阴极层的表面设置带有第一导通孔的第一封装及缓冲层；
    在所述第一导通孔中填充导电介质并在所述第一封装及缓冲层的表面设置第一金属引线层，使所述第一金属引线层通过所述第一导通孔中的导电介质与所述阴极层电连接。
  10. 如权利要求 9 所述的方法，其特征在于，所述的在所述第一导通孔中填充导电介质并在所述第一封装及缓冲层的表面设置第一金属引线层，使所述第一金属引线层通过所述第一导通孔中的导电介质与所述阴极层电连接的步骤具体为：
    在所述第一封装及缓冲层的表面敷设金属材料，使所述金属材料充满所述第一导通孔，同时在所述第一封装及缓冲层的表面形成第一金属引线层，使所述第一金属引线层通过所述第一导通孔中的金属材料与所述阴极层电连接。
  11. 如权利要求 8 、 9 或 10 所述的方法，其特征在于，在所述选取一透明基板，在所述透明基板上依次叠层设置阳极层、有机材料层、阴极层的步骤中，于所述的在所述透明基板上依次叠层设置阳极层、有机材料层、阴极层之前，还包括在所述透明基板的表面设置缓冲层的步骤，使所述阳极层设于所述缓冲层之上。
  12. 如权利要求 8 、 9 或 10 所述的方法，其特征在于，所述制作包括栅极、源极和漏极的 TFT 驱动基板，并在所述 TFT 驱动基板上设置第二金属引线层，并使所述第二金属引线层与所述源极或漏极电连接的步骤具体为：
    选取一支撑基板，在所述支撑基板上制备包括有栅极、源极和漏极的 TFT 单元，并在所述 TFT 单元之外制备第二封装及缓冲层；
    自所述第二封装及缓冲层向所述源极或漏极开设第二导通孔；
    向所述第二导通孔中填充导电介质并在所述第二封装及缓冲层的表面设置第二金属引线层，使所述第二金属引线层通过所述第二导通孔中的导电介质与所述源极或漏极电连接。
  13. 如权利要求 12 所述的方法，其特征在于，所述的向所述第二导通孔中填充导电介质并在所述第二封装及缓冲层的表面设置第二金属引线层，使所述第二金属引线层通过所述第二导通孔中的导电介质与所述源极或漏极电连接的步骤具体为：
    在所述第二封装及缓冲层的表面敷设金属材料，使所述金属材料充满所述第二导通孔，同时在所述第二封装及缓冲层的表面形成第二金属引线层，使所述第二金属引线层通过第二导通孔中的金属材料与所述源极或漏极电连接。
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