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WO2014059598A1 - Écran oled et son procédé de fabrication - Google Patents

Écran oled et son procédé de fabrication Download PDF

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Publication number
WO2014059598A1
WO2014059598A1 PCT/CN2012/083024 CN2012083024W WO2014059598A1 WO 2014059598 A1 WO2014059598 A1 WO 2014059598A1 CN 2012083024 W CN2012083024 W CN 2012083024W WO 2014059598 A1 WO2014059598 A1 WO 2014059598A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
substrate
oled
metal lead
via hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2012/083024
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English (en)
Chinese (zh)
Inventor
魏鹏
余晓军
刘自鸿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Royole Technologies Co Ltd
Original Assignee
Shenzhen Royole Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Royole Technologies Co Ltd filed Critical Shenzhen Royole Technologies Co Ltd
Priority to PCT/CN2012/083024 priority Critical patent/WO2014059598A1/fr
Priority to CN201280001473.2A priority patent/CN104041186A/zh
Publication of WO2014059598A1 publication Critical patent/WO2014059598A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • H10K59/1275—Electrical connections of the two substrates

Definitions

  • the present invention belongs to the field of display technologies, and in particular, to an OLED display screen and a method of fabricating the same.
  • OLED Organic electroluminescence
  • TFT Thin Film Transistor
  • the aperture ratio is low, so that high-density, high-resolution, high-brightness display is difficult to achieve; at the same time, a low aperture ratio makes the OLED The operating current of the device is increased, which greatly reduces the lifetime of the luminescent pixel. If OLED The use of a top-emitting structure requires the preparation of transparent or translucent electrodes, thereby increasing the complexity and difficulty of the preparation process and reducing the yield of production.
  • OLED display screen in the prior art, which respectively prepares an OLED light emitting substrate and a TFT driving substrate, in an OLED a light-emitting substrate is provided with a contact partition wall, and a cathode on the light-emitting substrate is taken out by contacting the partition wall, and the cathode on the light-emitting substrate and the TFT are The source (or drain) electrode on the driving substrate is taken out, and the alignment driving is realized by the manner in which the metal hard contact is connected in the opposite direction.
  • This docking technology has the following disadvantages: First, the technology is a direct hard contact of metal, for large screen, high resolution The OLED display makes it difficult to directly and hardly contact the light-emitting unit and the driving unit of all the pixels.
  • the alignment accuracy is difficult to control, the assembly is difficult, and the yield is reduced.
  • the technology Need to be in A large-area contact partition wall is prepared on the OLED substrate to realize the docking of the light-emitting substrate and the driving substrate, thereby sacrificing a large-area light-emitting area, and the high aperture ratio of the display screen cannot be realized, LG
  • the company adopts the above technology, and its aperture ratio is only 50 ⁇ 60%.
  • the long-term stability through direct hard contact of metal is poor. Due to the difference in expansion coefficient of different materials, after a long time temperature change, the contact between the light-emitting substrate and the drive substrate is easily desorbed, causing pixel failure, thereby affecting the display. The service life. Therefore, it is necessary to provide a new assembly scheme to overcome the above problems.
  • the object of the present invention is to provide an OLED
  • the display is designed to increase the aperture ratio, reduce assembly difficulty, and improve the stability of long-term use.
  • the present invention is achieved by an OLED display comprising an OLED substrate and a TFT driving substrate,
  • the OLED substrate includes a transparent substrate, an anode layer, an organic material layer and a cathode layer which are sequentially laminated; the cathode layer and the TFT A source or a drain of the driving substrate is respectively taken out through the first metal wiring layer and the second metal wiring layer, and the first metal wiring layer and the second metal wiring layer are aligned by a conductive film.
  • Another object of the present invention is to provide a method of fabricating an OLED display comprising the steps of:
  • an OLED substrate including a laminated transparent substrate, an anode layer, an organic material layer, and a cathode layer, and in the OLED a first metal lead layer is disposed on the substrate, and the first metal lead layer is electrically connected to the cathode layer;
  • TFT driving substrate including a gate, a source, and a drain
  • second metal lead layer is disposed on the driving substrate, and the second metal wiring layer is electrically connected to the source or the drain;
  • the invention is assembled by a separate OLED substrate and a TFT driving substrate, and the TFT driving circuit and the OLED are assembled.
  • the illuminating pixels need not be disposed on the same substrate, so that the effective area of the illuminating pixels is increased, and a relatively complicated TFT driving circuit can be prepared without affecting the OLED pixel area, and the OLED is greatly improved.
  • the aperture ratio is displayed.
  • the OLED substrate and the TFT driving substrate are assembled and docked, and the bottom light emitting display with high aperture ratio is realized, thereby avoiding the fabrication of the top emitting OLED.
  • the process brought by the substrate is complicated and the yield is low; most importantly, the conductive film is used to dock the OLED substrate and the TFT driving substrate, thereby avoiding the use of the contact partition, thereby increasing the OLED.
  • the effective area of the illuminating pixel improves the display aperture ratio; and can effectively improve the effective contact between the OLED illuminating pixel and the TFT driving circuit, and overcomes the alignment caused by the metal hard contact in the prior art.
  • the difficulty is difficult to control, the assembly is difficult, and the stability of the docking is poor, so that the service life of the display is longer; in addition, the use of the conductive film to dock the substrate is also beneficial to the production of the flexible display.
  • FIG. 1 is a first structural schematic view of an OLED display screen of the present invention
  • FIG. 2 is a first structural schematic view of an OLED substrate in an OLED display of the present invention.
  • FIG. 3 is a schematic view showing a second structure of an OLED substrate in an OLED display screen of the present invention.
  • FIG. 4 is a first schematic structural view of a TFT driving substrate in the OLED display of the present invention.
  • FIG. 5 is a schematic view showing a second structure of a TFT driving substrate in the OLED display panel of the present invention.
  • FIG. 6 is a second schematic structural view of an OLED display screen of the present invention.
  • FIG. 7 is a third structural schematic view of an OLED display screen of the present invention.
  • FIG. 8 is a fourth structural schematic view of an OLED display screen of the present invention.
  • FIG. 9 is a fifth structural schematic view of an OLED display screen of the present invention.
  • Figure 10 is a flow chart showing the fabrication of the OLED display of the present invention.
  • FIG. 1 shows an OLED provided by an embodiment of the present invention.
  • the OLED display screen provided in this embodiment includes an OLED substrate 1 and a TFT driving substrate 2 , and an OLED substrate 1 comprising a transparent substrate 11 , an anode layer 12 , an organic material layer 13 and a cathode layer 14 which are sequentially laminated, and a buffer layer may be further disposed between the transparent substrate 11 and the anode layer 12 15 , buffering and protecting the anode layer 12 , the organic material layer 13 and the cathode layer 14 .
  • the TFT driving substrate 2 is provided with a driving circuit including at least a gate electrode 21 and a source electrode 22 And drain 23 .
  • the OLED substrate 1 is provided with a first metal lead layer 3, and the first metal lead layer 3 is electrically connected to the cathode layer 14, and the cathode layer 14 is taken out.
  • TFT A second metal lead layer 4 is disposed on the driving substrate 2, and the second metal wiring layer 4 is electrically connected to the source 22 or the drain 23 of the TFT driving substrate 2 to connect the source 22 or the drain 23 Lead out.
  • the first metal wiring layer 3 and the second metal wiring layer 4 are aligned by a conductive film 5 (preferably an anisotropic conductive film) to complete the OLED substrate 1 and the TFT driving substrate 2 Assembly to get an OLED display.
  • the present invention separately provides a metal wiring layer on the OLED substrate 1 and the TFT driving substrate 2, and is provided with a metal wiring layer.
  • the OLED substrate 1 and the TFT driving substrate 2 are docked by the conductive adhesive film 5, and have the following advantages:
  • the display screen is composed of a separate OLED substrate 1 and a separate TFT drive substrate 2, TFT
  • the driving circuit is not on the same substrate as the OLED illuminating pixel, so that the effective area of the illuminating pixel is increased, and a relatively complicated TFT driving circuit can be prepared without affecting the OLED pixel area, and the OLED pixel area is greatly improved.
  • OLED display aperture ratio the aperture ratio can be increased to 90%;
  • the conductive film 5 is used to interface the OLED substrate 1 with the TFT driving substrate 2 , avoiding the use of the contact partition wall, thereby increasing the effective area of the OLED illuminating pixel, further improving the display aperture ratio; and, using the conductive adhesive film 5 to dock the substrate, can effectively improve the OLED Effective contact between the illuminating pixel and the TFT driving circuit overcomes the alignment caused by the hard contact of the metal in the prior art The difficulty is difficult to control, the assembly is difficult, and the stability of the docking is poor, so that the service life of the display is longer; in addition, the use of the conductive film to dock the substrate is also beneficial to the production of the flexible display.
  • the illumination type of the OLED substrate 1 may be RGB independent pixel illumination or white light OLED. If the color filter is used for illumination, if the RGB independent pixel is used directly, there is no need to set the color filter. When it is desired to provide a color filter, it is preferably disposed between the transparent substrate and the buffer layer.
  • the first metal wiring layer 3 and the cathode layer 14 Electrical connections can be made directly or indirectly.
  • the first metal wiring layer 3 can be directly applied to the surface of the cathode layer 14 and the cathode layer 14
  • the electrical connection can be made directly, or it can be integrated with the cathode layer 14.
  • a first package and a buffer layer 16 may be disposed on the surface of the cathode layer 14. And opening at least one first via hole 17 therein, then filling the first via hole 17 with a conductive medium, and forming a first metal lead layer on the surface of the first package and the buffer layer 16 Wherein, the conductive medium and the material of the first metal wiring layer 3 may be the same. Specifically, the first metal lead layer 3 can be made to fill the first via hole 17 with the metal material, thereby completing the first via hole 17 at the same time. The filling and fabrication of the first metal lead layer 3.
  • the conductive medium is in contact with the cathode layer 14, and the indirect electrical connection between the cathode layer 14 and the first metal wiring layer 3 is achieved, and the cathode layer 14 is further Lead out. Since the first package and the buffer layer 16 are disposed on the surface of the cathode layer 14, the protection effect on the OLED light-emitting structure is enhanced, which is advantageous for enhancing the stability of the OLED substrate.
  • the TFT driving substrate 2 may include a supporting substrate 24 provided on the supporting substrate 24.
  • the TFT unit (including the gate electrode 21, the source electrode 22, and the drain electrode 23) is provided with a second package and a buffer layer 25 on the support substrate 24 for protecting the TFT unit.
  • the second metal wiring layer 4 is electrically connected to the source 22 or the drain 23 .
  • at least one second via hole 26 and a second via hole 26 are opened from the second package and the buffer layer 25 to the source 22 or the drain 23 .
  • the conductive metal is filled in, and the second metal wiring layer 4 is disposed on the surface of the second package and the buffer layer 25.
  • the conductive medium and the second metal wiring layer 4 may be made of the same material.
  • the second metal lead layer 4 passes through the second via hole
  • the conductive medium in 26 contacts source 22 or drain 23, which in turn leads source 22 or drain 23.
  • the TFT unit may specifically adopt a bottom gate (the gate 21 is close to the support substrate 24) or a top gate (the gate 21). Far from the support substrate 24, the source 22 and the drain 23 are close to the support substrate 24) structure.
  • the TFT unit is the gate electrode 21 and the semiconductor layer from the support substrate 24 in this order. 27, the insulating layer 28, the source 22 and the drain 23, at this time, the second via hole 26 penetrates the second package and the buffer layer 25, as shown in FIG.
  • the TFT unit self-supporting substrate 24 is the source 22 and the drain 23, the semiconductor layer 27, the insulating layer 28, and the gate 21, and the second via hole 26 penetrates the second package and the buffer layer 25 and the insulating layer 28 , as shown in Figure 4.
  • the embodiment further provides a structural diagram of several OLED display screens:
  • Figure 1 is a first structural diagram of an OLED display in which the cathode layer 14 of the OLED substrate is directly connected to the first metal wiring layer. 3 phase contact, the TFT unit adopts a bottom gate structure, and the second metal wiring layer 4 is electrically connected to the drain 23 of the TFT unit through the second via hole 26, the first metal wiring layer 3 and the second metal wiring layer 4 Through the alignment of the anisotropic conductive film 5, the alignment assembly of the OLED substrate and the TFT driving substrate is realized.
  • Figure 6 shows the second structure of the OLED display. Unlike the structure shown in Figure 1, the TFT is The unit uses a top gate structure.
  • FIG. 7 is a third structural diagram of an OLED display in which a cathode layer 14 of an OLED substrate passes through a first via hole 17 Electrically connected to the first metal lead layer 3, the TFT unit adopts a top gate structure, and the second metal wiring layer 4 is still electrically connected to the drain 23 of the TFT unit through the second via hole 26, the first metal wiring layer 3 is aligned with the second metal lead layer 4 through the anisotropic conductive film 5.
  • Figure 8 shows the fourth structure of the OLED display. Unlike the structure shown in Figure 7, the TFT is The unit uses a bottom gate structure.
  • Figure 9 shows the fifth structure of the OLED display. Unlike the structure shown in Figure 7, the transparent substrate 11 and the buffer layer. A color filter 18 is provided between the 15th.
  • the present invention is not limited to the above five structures as long as it passes through the first metal wiring layer 3
  • the second metal lead layer 4 respectively extracts the cathode layer 14 of the OLED substrate 1 and the drain 22 or the source 23 of the TFT driving substrate 2, and is connected by a conductive film 5 OLED displays are all within the scope of the present invention.
  • the following provides a method for fabricating the OLED display panel of the present invention. Referring to FIG. 8, the method mainly includes the following steps:
  • step S101 an OLED substrate including a transparent substrate, an anode layer, an organic material layer, and a cathode layer disposed in a stack is fabricated, and A first metal wiring layer is disposed on the OLED substrate, and the first metal wiring layer is electrically connected to the cathode layer.
  • step S101 it can be implemented by the following methods:
  • a transparent substrate is selected, and an anode layer, an organic material layer and a cathode layer are sequentially laminated on the transparent substrate;
  • the first metal wiring layer is directly disposed on the surface of the cathode layer, and the first metal wiring layer and the cathode layer are directly electrically connected. It is also possible to integrally form the first metal wiring layer and the cathode layer.
  • a buffer layer is formed on the transparent substrate before the anode layer, the organic material layer and the cathode layer are formed, and then the anode layer is disposed on the buffer layer, and the anode layer is
  • the light-emitting unit composed of the organic material layer and the cathode layer serves as an effective buffering and protection function.
  • the OLED substrate is white OLED At this time, it is also necessary to provide a color filter film before the anode layer is disposed, and the color filter film is preferably disposed between the buffer layer and the anode layer.
  • step S101 the following method can be implemented:
  • a transparent substrate is selected, and an anode layer, an organic material layer and a cathode layer are sequentially laminated on the transparent substrate;
  • a first package and a buffer layer with a first via hole are disposed on the surface of the cathode layer;
  • the first via hole is filled with the conductive medium, and the first metal lead layer is disposed on the surface of the first package and the buffer layer, so that the first metal lead layer passes through the conductive medium and the cathode in the first via hole.
  • the layers are in contact.
  • a metal material may be disposed on the surface of the first package and the buffer layer to fill the first via hole, and a first metal lead layer is formed on the surface of the first package and the buffer layer to facilitate fabrication.
  • the first metal lead layer and the OLED The cathode layer of the substrate is indirectly electrically connected through the first via hole, and on the one hand, the electrical connection between the first metal lead layer and the cathode layer is ensured, and on the other hand, the protection effect on the OLED substrate can be enhanced.
  • a TFT driving substrate including a gate, a source, and a drain is fabricated, and is in the TFT a second metal lead layer is disposed on the driving substrate, and the second metal wiring layer is electrically connected to the source or the drain;
  • step S102 can be implemented as follows:
  • a support substrate is selected, and a TFT unit including a gate, a source, and a drain is prepared on the support substrate, in the TFT Preparing a second package and a buffer layer outside the unit;
  • a second via hole is opened from the second package and the buffer layer to the source or the drain;
  • the second via hole is filled with a conductive medium, and a second metal lead layer is disposed on the surface of the second package and the buffer layer, so that the second metal lead layer passes through the conductive medium and the source in the second via hole
  • the pole or drain is electrically connected.
  • This step can also be achieved by laying a metal material on the surface of the second package and the buffer layer, filling the metal material with the second via hole and simultaneously forming the second metal wiring layer.
  • the source or the drain of the TFT driving substrate can be taken out through the second metal wiring layer for the OLED
  • the cathode layer of the substrate is electrically connected.
  • step S103 a conductive paste film is provided on the surface of the first metal wiring layer and/or the second metal wiring layer.
  • the material of the conductive film is preferably an anisotropic conductive paste.
  • an anisotropic conductive paste may be disposed on the surface of any one of the first metal wiring layer and the second metal wiring layer, as long as the two metal wiring layers can be butted together, of course, the first and the A conductive adhesive film is disposed on both of the metal lead layers.
  • step S104 the first metal lead layer and the second metal lead layer are butted through the conductive adhesive film to complete the OLED substrate and the TFT.
  • the alignment of the drive substrate is assembled.
  • step S104 the OLED substrate and the cathode layer and the TFT The electrical connection between the source or the drain of the drive substrate is achieved, that is, the assembly of the OLED display screen is completed.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
PCT/CN2012/083024 2012-10-16 2012-10-16 Écran oled et son procédé de fabrication Ceased WO2014059598A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/CN2012/083024 WO2014059598A1 (fr) 2012-10-16 2012-10-16 Écran oled et son procédé de fabrication
CN201280001473.2A CN104041186A (zh) 2012-10-16 2012-10-16 一种oled显示屏及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2012/083024 WO2014059598A1 (fr) 2012-10-16 2012-10-16 Écran oled et son procédé de fabrication

Publications (1)

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WO2014059598A1 true WO2014059598A1 (fr) 2014-04-24

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WO (1) WO2014059598A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576952B (zh) * 2014-12-30 2017-02-22 北京维信诺光电技术有限公司 可以随意裁切的oled光源及其裁切方法
KR102741708B1 (ko) * 2020-12-31 2024-12-12 엘지디스플레이 주식회사 터치 디스플레이 장치
CN113066759A (zh) * 2021-03-02 2021-07-02 Tcl华星光电技术有限公司 驱动走线的制作方法、显示面板及显示面板的制作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1330414A (zh) * 2000-06-22 2002-01-09 株式会社半导体能源研究所 显示装置
CN1454034A (zh) * 2002-04-25 2003-11-05 Lg.菲利浦Lcd株式会社 有机电致发光显示装置及其制造方法
CN1455629A (zh) * 2002-05-03 2003-11-12 Lg.菲利浦Lcd株式会社 有机电致发光显示器件及其制造方法
CN1460295A (zh) * 2001-01-31 2003-12-03 精工爱普生株式会社 显示装置
CN2698003Y (zh) * 2004-02-16 2005-05-04 黄锡珉 薄膜晶体管有源矩阵有机发光顶上发光器件
CN101202299A (zh) * 2006-12-13 2008-06-18 Lg.菲利浦Lcd株式会社 有机发光二极管显示器件及其制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102522429A (zh) * 2011-12-28 2012-06-27 华南理工大学 一种基于金属氧化物的薄膜晶体管及其制备方法和应用

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1330414A (zh) * 2000-06-22 2002-01-09 株式会社半导体能源研究所 显示装置
CN1460295A (zh) * 2001-01-31 2003-12-03 精工爱普生株式会社 显示装置
CN1454034A (zh) * 2002-04-25 2003-11-05 Lg.菲利浦Lcd株式会社 有机电致发光显示装置及其制造方法
CN1455629A (zh) * 2002-05-03 2003-11-12 Lg.菲利浦Lcd株式会社 有机电致发光显示器件及其制造方法
CN2698003Y (zh) * 2004-02-16 2005-05-04 黄锡珉 薄膜晶体管有源矩阵有机发光顶上发光器件
CN101202299A (zh) * 2006-12-13 2008-06-18 Lg.菲利浦Lcd株式会社 有机发光二极管显示器件及其制造方法

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