[go: up one dir, main page]

WO2013111542A9 - 窒化物半導体発光装置 - Google Patents

窒化物半導体発光装置 Download PDF

Info

Publication number
WO2013111542A9
WO2013111542A9 PCT/JP2013/000204 JP2013000204W WO2013111542A9 WO 2013111542 A9 WO2013111542 A9 WO 2013111542A9 JP 2013000204 W JP2013000204 W JP 2013000204W WO 2013111542 A9 WO2013111542 A9 WO 2013111542A9
Authority
WO
WIPO (PCT)
Prior art keywords
nitride semiconductor
light
semiconductor light
emitting device
translucent member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/000204
Other languages
English (en)
French (fr)
Other versions
WO2013111542A1 (ja
Inventor
彰 井上
正樹 藤金
俊哉 横川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to CN201380001192.1A priority Critical patent/CN103503182A/zh
Publication of WO2013111542A1 publication Critical patent/WO2013111542A1/ja
Publication of WO2013111542A9 publication Critical patent/WO2013111542A9/ja
Priority to US14/060,146 priority patent/US8896001B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
    • H10W72/07554—
    • H10W72/20—
    • H10W72/547—
    • H10W72/884—
    • H10W74/00—
    • H10W90/724—

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

　本願に開示された窒化物半導体発光装置は、偏光光を出射し、非極性面または半極性面を成長面に有する活性層を有する窒化物半導体発光チップと、前記活性層からの光を透過する透光性カバーと、を備えた窒化物半導体発光装置であって、前記透光性カバーは、前記窒化物半導体発光チップの側方の領域のうち、前記偏光光の偏光方向に垂直な方向に配置された第１の透光性部材と、前記窒化物半導体発光チップの上方の領域に配置された第２の透光性部材とを有し、前記第１の透光性部材における光の拡散透過率は、前記第２の透光性部材における光の拡散透過率よりも高い。
PCT/JP2013/000204 2012-01-23 2013-01-17 窒化物半導体発光装置 Ceased WO2013111542A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201380001192.1A CN103503182A (zh) 2012-01-23 2013-01-17 氮化物半导体发光装置
US14/060,146 US8896001B2 (en) 2012-01-23 2013-10-22 Nitride semiconductor light emitting device

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2012010950 2012-01-23
JP2012-010950 2012-01-23
JP2012012247 2012-01-24
JP2012-012247 2012-01-24
JP2012030166 2012-02-15
JP2012-030166 2012-02-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/060,146 Continuation US8896001B2 (en) 2012-01-23 2013-10-22 Nitride semiconductor light emitting device

Publications (2)

Publication Number Publication Date
WO2013111542A1 WO2013111542A1 (ja) 2013-08-01
WO2013111542A9 true WO2013111542A9 (ja) 2013-10-17

Family

ID=48873276

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/000204 Ceased WO2013111542A1 (ja) 2012-01-23 2013-01-17 窒化物半導体発光装置

Country Status (4)

Country Link
US (1) US8896001B2 (ja)
JP (1) JPWO2013111542A1 (ja)
CN (1) CN103503182A (ja)
WO (1) WO2013111542A1 (ja)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015182207A1 (ja) * 2014-05-30 2015-12-03 三菱化学株式会社 エピタキシャルウエハ、半導体発光素子、発光装置及びエピタキシャルウエハの製造方法
DE102014112883A1 (de) * 2014-09-08 2016-03-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
JP6484982B2 (ja) 2014-09-30 2019-03-20 日亜化学工業株式会社 発光装置の製造方法
US20170025589A1 (en) * 2015-07-22 2017-01-26 Epistar Corporation Light emitting structure and method for manufacturing the same
JP6649726B2 (ja) * 2015-09-11 2020-02-19 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 半導体発光装置およびその製造方法
CN107046091B (zh) * 2016-02-05 2020-03-06 行家光电股份有限公司 具光形调整结构的发光装置及其制造方法
US10797209B2 (en) 2016-02-05 2020-10-06 Maven Optronics Co., Ltd. Light emitting device with beam shaping structure and manufacturing method of the same
JP6776855B2 (ja) * 2016-12-06 2020-10-28 日亜化学工業株式会社 発光装置
KR102831200B1 (ko) * 2017-02-02 2025-07-10 서울반도체 주식회사 발광 다이오드 패키지
JP7111939B2 (ja) * 2017-04-28 2022-08-03 日亜化学工業株式会社 発光装置及びその製造方法
JP7403944B2 (ja) * 2018-05-30 2023-12-25 シーシーエス株式会社 Ｌｅｄ発光装置
JP6897640B2 (ja) * 2018-08-02 2021-07-07 日亜化学工業株式会社 発光装置の製造方法
US11171268B2 (en) * 2018-09-26 2021-11-09 Nichia Corporation Light emitting device and method of manufacturing the same
JP7360003B2 (ja) * 2018-09-26 2023-10-12 日亜化学工業株式会社 発光装置およびその製造方法
JP6798535B2 (ja) * 2018-09-28 2020-12-09 日亜化学工業株式会社 発光装置
CN109491139A (zh) * 2018-10-31 2019-03-19 武汉华星光电技术有限公司 背光源的制作方法
JP6852726B2 (ja) 2018-12-17 2021-03-31 日亜化学工業株式会社 発光装置と発光装置の製造方法
US11762190B2 (en) 2019-04-19 2023-09-19 Materion Precision Optics (Shanghai) Limited High temperature resistant reflective layer for wavelength conversion devices
JP2021082655A (ja) * 2019-11-15 2021-05-27 日亜化学工業株式会社 発光装置および発光装置の製造方法
KR102825814B1 (ko) * 2019-11-22 2025-06-27 삼성전자주식회사 발광다이오드 패키지

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4093943B2 (ja) 2003-09-30 2008-06-04 三洋電機株式会社 発光素子およびその製造方法
US7408201B2 (en) 2004-03-19 2008-08-05 Philips Lumileds Lighting Company, Llc Polarized semiconductor light emitting device
JP4547569B2 (ja) * 2004-08-31 2010-09-22 スタンレー電気株式会社 表面実装型ｌｅｄ
JP2006237500A (ja) * 2005-02-28 2006-09-07 Toyoda Gosei Co Ltd 発光装置
KR20100131500A (ko) * 2005-09-22 2010-12-15 미쓰비시 가가꾸 가부시키가이샤 반도체 발광 디바이스용 부재 및 그 제조 방법, 및 그것을 이용한 반도체 발광 디바이스
JP2007194401A (ja) * 2006-01-19 2007-08-02 Showa Denko Kk 化合物半導体発光素子を用いたｌｅｄパッケージ
JP2007227791A (ja) * 2006-02-24 2007-09-06 Nichia Chem Ind Ltd 発光装置の製造方法および発光装置
JP4749201B2 (ja) 2006-03-31 2011-08-17 三井化学株式会社 半導体発光素子封止用組成物
JP5564162B2 (ja) * 2006-09-29 2014-07-30 フューチャー ライト リミテッド ライアビリティ カンパニー 発光ダイオード装置
JP2008218511A (ja) 2007-02-28 2008-09-18 Toyoda Gosei Co Ltd 半導体発光装置及びその製造方法
JP2008305971A (ja) * 2007-06-07 2008-12-18 Rohm Co Ltd 発光素子
JP2008305941A (ja) * 2007-06-07 2008-12-18 Pioneer Electronic Corp 発光ダイオードのドライバ回路及び発光ダイオードの異常検出方法等
JP2009123803A (ja) * 2007-11-13 2009-06-04 Sanyo Electric Co Ltd 発光ダイオード装置
CN102165611B (zh) 2008-09-25 2014-04-23 皇家飞利浦电子股份有限公司 有涂层的发光器件及其涂覆方法
JP5650885B2 (ja) * 2008-12-27 2015-01-07 日亜化学工業株式会社 波長変換焼結体及びこれを用いた発光装置、並びに波長変換焼結体の製造方法
JP5689225B2 (ja) * 2009-03-31 2015-03-25 日亜化学工業株式会社 発光装置
JP5332921B2 (ja) 2009-06-05 2013-11-06 三菱化学株式会社 半導体発光装置、照明装置、及び画像表示装置
JP2011192598A (ja) 2010-03-16 2011-09-29 Stanley Electric Co Ltd 白色ｌｅｄ光源モジュール
JP5468517B2 (ja) 2010-10-19 2014-04-09 パナソニック株式会社 半導体発光デバイス

Also Published As

Publication number Publication date
CN103503182A (zh) 2014-01-08
WO2013111542A1 (ja) 2013-08-01
US8896001B2 (en) 2014-11-25
US20140048821A1 (en) 2014-02-20
JPWO2013111542A1 (ja) 2015-05-11

Similar Documents

Publication Publication Date Title
WO2013111542A9 (ja) 窒化物半導体発光装置
WO2014167455A3 (en) Top emitting semiconductor light emitting device
EP2752894A3 (en) Semiconductor light-emitting device and light source device including the same
USD718725S1 (en) LED package with encapsulant
EP2372791A3 (en) Light emitting diode
EP4243094A3 (en) Light emitting diode
WO2011089069A3 (de) Leuchtvorrichtung
EP2731156A3 (en) Organic light emitting diode display
EP2355175A3 (en) Light emitting device, method of manufacturing the same, light emitting device package and lighting system
EP2657992A3 (en) Light emitting device and light emitting device package
GB2522816A (en) Light emitting device reflective bank structure
WO2012164437A3 (en) Light emitting device bonded to a support substrate
EP2595205A3 (en) Light emitting diode device
WO2013025402A3 (en) Two part flexible light emitting semiconductor device
EP2355190A3 (en) Passivated light emitting device
EP2696379A3 (en) Light emitting device
EP2365546A3 (en) Light emitting device and light emitting device package
PH12015502664A1 (en) Daylight redirecting glazing laminates
TW201130176A (en) Package system
IN2012DE00204A (ja)
EP2610933A3 (en) Molded package for light emitting device
WO2013083528A3 (de) Halbleiterleuchte
WO2015124531A3 (de) Laserdiodenchip mit beschichteter laserfacette
WO2014017871A3 (ko) 반도체 발광소자
WO2009126010A3 (ko) 발광 소자

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2013529493

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13740882

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13740882

Country of ref document: EP

Kind code of ref document: A1