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WO2009028453A1 - Transistor à couches minces - Google Patents

Transistor à couches minces Download PDF

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Publication number
WO2009028453A1
WO2009028453A1 PCT/JP2008/065099 JP2008065099W WO2009028453A1 WO 2009028453 A1 WO2009028453 A1 WO 2009028453A1 JP 2008065099 W JP2008065099 W JP 2008065099W WO 2009028453 A1 WO2009028453 A1 WO 2009028453A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
layer composed
active layer
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065099
Other languages
English (en)
Japanese (ja)
Inventor
Katsura Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP2009530106A priority Critical patent/JPWO2009028453A1/ja
Publication of WO2009028453A1 publication Critical patent/WO2009028453A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions

Landscapes

  • Thin Film Transistor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

L'invention porte sur un transistor à couches minces ayant un rapport passant/bloqué élevé avec un élément de transistor à couches minces (TFT) stabilisé, à savoir, une mobilité améliorée et un faible courant bloqué, et un rendement de production amélioré. Le transistor à couches minces comporte une première couche active constituée par un métal-oxyde-semi-conducteur, et une deuxième couche active constituée par un semi-conducteur organique. Le transistor à couches minces est configuré par stratification des première et deuxième couches actives.
PCT/JP2008/065099 2007-08-31 2008-08-25 Transistor à couches minces Ceased WO2009028453A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009530106A JPWO2009028453A1 (ja) 2007-08-31 2008-08-25 薄膜トランジスタ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007225516 2007-08-31
JP2007-225516 2007-08-31

Publications (1)

Publication Number Publication Date
WO2009028453A1 true WO2009028453A1 (fr) 2009-03-05

Family

ID=40387173

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065099 Ceased WO2009028453A1 (fr) 2007-08-31 2008-08-25 Transistor à couches minces

Country Status (2)

Country Link
JP (1) JPWO2009028453A1 (fr)
WO (1) WO2009028453A1 (fr)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102290440A (zh) * 2010-06-21 2011-12-21 财团法人工业技术研究院 晶体管及其制造方法
CN103268918A (zh) * 2012-06-29 2013-08-28 上海天马微电子有限公司 双极性薄膜晶体管及其制造方法
JP2014517524A (ja) * 2011-06-01 2014-07-17 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング ハイブリッド両極性ｔｆｔ
JP2014154734A (ja) * 2013-02-08 2014-08-25 Kochi Univ Of Technology オゾン支援による高品質均質金属酸化物薄膜作製技術、及び、該薄膜作製技術による酸化物薄膜トランジスタ、及び、その製造方法
US8928046B2 (en) 2010-04-16 2015-01-06 Industrial Technology Research Institute Transistor and method of fabricating the same
KR101509115B1 (ko) 2011-03-09 2015-04-07 삼성디스플레이 주식회사 박막 트랜지스터의 반도체층용 산화물, 상기 산화물을 구비한 박막 트랜지스터의 반도체층 및 박막 트랜지스터
US9142682B2 (en) 2012-09-05 2015-09-22 Samsung Display Co., Ltd. Thin film transistor and manufacturing method thereof
WO2017110953A1 (fr) * 2015-12-24 2017-06-29 株式会社Flosfia Procédé de formation de film
JP2017157856A (ja) * 2011-07-08 2017-09-07 株式会社半導体エネルギー研究所 半導体装置
JP2018136552A (ja) * 2012-08-28 2018-08-30 株式会社半導体エネルギー研究所 表示装置
JP2018139316A (ja) * 2012-11-28 2018-09-06 株式会社半導体エネルギー研究所 半導体装置
JP2019087766A (ja) * 2009-03-06 2019-06-06 株式会社半導体エネルギー研究所 半導体装置
JP2020102636A (ja) * 2009-07-17 2020-07-02 株式会社半導体エネルギー研究所 表示装置
WO2020162130A1 (fr) * 2019-02-04 2020-08-13 富士フイルム株式会社 Procédé de formation de film semi-conducteur organique
JP2024147583A (ja) * 2010-04-28 2024-10-16 株式会社半導体エネルギー研究所 液晶表示装置

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08228034A (ja) * 1994-12-09 1996-09-03 At & T Corp 有機薄膜トランジスタ装置
JPH09199732A (ja) * 1996-01-16 1997-07-31 Lucent Technol Inc トランジスタからなる製品
JP2002319682A (ja) * 2002-01-04 2002-10-31 Japan Science & Technology Corp トランジスタ及び半導体装置
WO2003016599A1 (fr) * 2001-08-09 2003-02-27 Asahi Kasei Kabushiki Kaisha Element a semi-conducteur organique
JP2004006686A (ja) * 2002-03-26 2004-01-08 Sanyo Electric Co Ltd ＺｎＯ半導体層の形成方法、半導体素子の製造方法及び半導体素子
JP2004256532A (ja) * 2003-02-05 2004-09-16 Asahi Kasei Corp ポリアセン化合物及びその合成方法
JP2004327857A (ja) * 2003-04-25 2004-11-18 Pioneer Electronic Corp 有機トランジスタの製造方法および有機トランジスタ
JP2005032774A (ja) * 2003-07-07 2005-02-03 Seiko Epson Corp 有機薄膜トランジスタ及びその製造方法
JP2005158765A (ja) * 2003-11-20 2005-06-16 Canon Inc 電界効果型有機トランジスタおよびその製造方法
JP2006080172A (ja) * 2004-09-08 2006-03-23 Casio Comput Co Ltd 酸化亜鉛膜のパターニング方法
JP2006269469A (ja) * 2005-03-22 2006-10-05 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
WO2008099863A1 (fr) * 2007-02-16 2008-08-21 Idemitsu Kosan Co., Ltd. Semi-conducteur, dispositif à semi-conducteur et dispositif de circuit à transistor complémentaire

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08228034A (ja) * 1994-12-09 1996-09-03 At & T Corp 有機薄膜トランジスタ装置
JPH09199732A (ja) * 1996-01-16 1997-07-31 Lucent Technol Inc トランジスタからなる製品
WO2003016599A1 (fr) * 2001-08-09 2003-02-27 Asahi Kasei Kabushiki Kaisha Element a semi-conducteur organique
JP2002319682A (ja) * 2002-01-04 2002-10-31 Japan Science & Technology Corp トランジスタ及び半導体装置
JP2004006686A (ja) * 2002-03-26 2004-01-08 Sanyo Electric Co Ltd ＺｎＯ半導体層の形成方法、半導体素子の製造方法及び半導体素子
JP2004256532A (ja) * 2003-02-05 2004-09-16 Asahi Kasei Corp ポリアセン化合物及びその合成方法
JP2004327857A (ja) * 2003-04-25 2004-11-18 Pioneer Electronic Corp 有機トランジスタの製造方法および有機トランジスタ
JP2005032774A (ja) * 2003-07-07 2005-02-03 Seiko Epson Corp 有機薄膜トランジスタ及びその製造方法
JP2005158765A (ja) * 2003-11-20 2005-06-16 Canon Inc 電界効果型有機トランジスタおよびその製造方法
JP2006080172A (ja) * 2004-09-08 2006-03-23 Casio Comput Co Ltd 酸化亜鉛膜のパターニング方法
JP2006269469A (ja) * 2005-03-22 2006-10-05 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
WO2008099863A1 (fr) * 2007-02-16 2008-08-21 Idemitsu Kosan Co., Ltd. Semi-conducteur, dispositif à semi-conducteur et dispositif de circuit à transistor complémentaire

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019087766A (ja) * 2009-03-06 2019-06-06 株式会社半導体エネルギー研究所 半導体装置
US11715801B2 (en) 2009-03-06 2023-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11309430B2 (en) 2009-03-06 2022-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10700213B2 (en) 2009-03-06 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2020102636A (ja) * 2009-07-17 2020-07-02 株式会社半導体エネルギー研究所 表示装置
US8928046B2 (en) 2010-04-16 2015-01-06 Industrial Technology Research Institute Transistor and method of fabricating the same
JP2024147583A (ja) * 2010-04-28 2024-10-16 株式会社半導体エネルギー研究所 液晶表示装置
CN102290440A (zh) * 2010-06-21 2011-12-21 财团法人工业技术研究院 晶体管及其制造方法
KR101509115B1 (ko) 2011-03-09 2015-04-07 삼성디스플레이 주식회사 박막 트랜지스터의 반도체층용 산화물, 상기 산화물을 구비한 박막 트랜지스터의 반도체층 및 박막 트랜지스터
JP2014517524A (ja) * 2011-06-01 2014-07-17 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング ハイブリッド両極性ｔｆｔ
US11011652B2 (en) 2011-07-08 2021-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11588058B2 (en) 2011-07-08 2023-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10658522B2 (en) 2011-07-08 2020-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10043918B2 (en) 2011-07-08 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2017157856A (ja) * 2011-07-08 2017-09-07 株式会社半導体エネルギー研究所 半導体装置
US12132121B2 (en) 2011-07-08 2024-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103268918A (zh) * 2012-06-29 2013-08-28 上海天马微电子有限公司 双极性薄膜晶体管及其制造方法
JP2018136552A (ja) * 2012-08-28 2018-08-30 株式会社半導体エネルギー研究所 表示装置
US10317736B2 (en) 2012-08-28 2019-06-11 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9142682B2 (en) 2012-09-05 2015-09-22 Samsung Display Co., Ltd. Thin film transistor and manufacturing method thereof
JP2018139316A (ja) * 2012-11-28 2018-09-06 株式会社半導体エネルギー研究所 半導体装置
JP2014154734A (ja) * 2013-02-08 2014-08-25 Kochi Univ Of Technology オゾン支援による高品質均質金属酸化物薄膜作製技術、及び、該薄膜作製技術による酸化物薄膜トランジスタ、及び、その製造方法
WO2017110953A1 (fr) * 2015-12-24 2017-06-29 株式会社Flosfia Procédé de formation de film
JP7223041B2 (ja) 2019-02-04 2023-02-15 富士フイルム株式会社 有機半導体膜の成膜方法
JPWO2020162130A1 (ja) * 2019-02-04 2021-12-23 富士フイルム株式会社 有機半導体膜の成膜方法
WO2020162130A1 (fr) * 2019-02-04 2020-08-13 富士フイルム株式会社 Procédé de formation de film semi-conducteur organique
US12207536B2 (en) 2019-02-04 2025-01-21 Fujifilm Corporation Film forming method for organic semiconductor film

Also Published As

Publication number Publication date
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