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WO2008099528A1 - Dispositif d'affichage et procédé de fabrication du dispositif d'affichage - Google Patents

Dispositif d'affichage et procédé de fabrication du dispositif d'affichage Download PDF

Info

Publication number
WO2008099528A1
WO2008099528A1 PCT/JP2007/068472 JP2007068472W WO2008099528A1 WO 2008099528 A1 WO2008099528 A1 WO 2008099528A1 JP 2007068472 W JP2007068472 W JP 2007068472W WO 2008099528 A1 WO2008099528 A1 WO 2008099528A1
Authority
WO
WIPO (PCT)
Prior art keywords
display device
electrode
semiconductor film
gate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/068472
Other languages
English (en)
Japanese (ja)
Inventor
Ichirou Oki
Kimihiko Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of WO2008099528A1 publication Critical patent/WO2008099528A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

L'invention concerne un dispositif d'affichage qui comporte un substrat (41) ; une électrode de grille (63) formée sur le substrat (41) ; un film isolant de grille (66) formé sur l'électrode de grille (63) ; un film semi-conducteur (67) formé sur le film isolant de grille (66), comportant une région de canal (67a) ; une électrode de source (63) connectée à une extrémité du film semi-conducteur (67), et une électrode de drain (64), qui est connectée à l'autre extrémité du film semi-conducteur (67) et est connectée à l'électrode de source (63) par le fait qu'elle a la région de canal (67) entre elles. L'électrode de source (63) et l'électrode de drain (64) sont formées sur le substrat (41) pour recouvrir l'électrode de grille (65), le film isolant de grille (66) et le film semi-conducteur (67), avec des espaces (71, 72) formés entre les électrodes et l'électrode de grille (65).
PCT/JP2007/068472 2007-02-13 2007-09-24 Dispositif d'affichage et procédé de fabrication du dispositif d'affichage Ceased WO2008099528A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-032439 2007-02-13
JP2007032439 2007-02-13

Publications (1)

Publication Number Publication Date
WO2008099528A1 true WO2008099528A1 (fr) 2008-08-21

Family

ID=39689785

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/068472 Ceased WO2008099528A1 (fr) 2007-02-13 2007-09-24 Dispositif d'affichage et procédé de fabrication du dispositif d'affichage

Country Status (1)

Country Link
WO (1) WO2008099528A1 (fr)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009072451A1 (fr) * 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Procédé de fabrication d'un transistor en couche mince et procédé de fabrication d'un dispositif d'affichage
WO2009107686A1 (fr) * 2008-02-27 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Dispositif d'affichage à cristaux liquides et son procédé de fabrication, et dispositif électronique
JP2009276758A (ja) * 2008-04-17 2009-11-26 Semiconductor Energy Lab Co Ltd 発光装置及びその作製方法
US7749820B2 (en) 2008-03-07 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US7790483B2 (en) 2008-06-17 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof, and display device and manufacturing method thereof
JP2010212677A (ja) * 2009-02-16 2010-09-24 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法及び表示装置の作製方法
JP2010251733A (ja) * 2009-03-26 2010-11-04 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及び表示装置の作製方法
US7883943B2 (en) 2008-03-11 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8035107B2 (en) 2008-02-26 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
WO2011160937A1 (fr) * 2010-06-21 2011-12-29 Imec Procédé de fabrication de transistors à couches minces et circuits à transistors
US8101442B2 (en) 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
US8143170B2 (en) 2009-02-13 2012-03-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8202769B2 (en) 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8207026B2 (en) 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
CN110462842A (zh) * 2017-04-07 2019-11-15 夏普株式会社 Tft基板、具备tft基板的扫描天线以及tft基板的制造方法
TWI755747B (zh) * 2009-10-16 2022-02-21 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61185724A (ja) * 1985-02-13 1986-08-19 Sharp Corp 薄膜トランジスタの製造方法
JPH03161938A (ja) * 1989-11-20 1991-07-11 Seiko Instr Inc 薄膜トランジスタの製造方法
JPH04188770A (ja) * 1990-11-22 1992-07-07 Casio Comput Co Ltd 薄膜トランジスタ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61185724A (ja) * 1985-02-13 1986-08-19 Sharp Corp 薄膜トランジスタの製造方法
JPH03161938A (ja) * 1989-11-20 1991-07-11 Seiko Instr Inc 薄膜トランジスタの製造方法
JPH04188770A (ja) * 1990-11-22 1992-07-07 Casio Comput Co Ltd 薄膜トランジスタ

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2232561A4 (fr) * 2007-12-03 2015-05-06 Semiconductor Energy Lab Procédé de fabrication d'un transistor en couche mince et procédé de fabrication d'un dispositif d'affichage
WO2009072451A1 (fr) * 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Procédé de fabrication d'un transistor en couche mince et procédé de fabrication d'un dispositif d'affichage
US7993991B2 (en) 2007-12-03 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
US8035107B2 (en) 2008-02-26 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8901561B2 (en) 2008-02-26 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8361820B2 (en) 2008-02-27 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a liquid crystal display device
JP2014160849A (ja) * 2008-02-27 2014-09-04 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ
US8049221B2 (en) 2008-02-27 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2009107686A1 (fr) * 2008-02-27 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Dispositif d'affichage à cristaux liquides et son procédé de fabrication, et dispositif électronique
US8101442B2 (en) 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
US7749820B2 (en) 2008-03-07 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US8278662B2 (en) 2008-03-07 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US7883943B2 (en) 2008-03-11 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
JP2009276758A (ja) * 2008-04-17 2009-11-26 Semiconductor Energy Lab Co Ltd 発光装置及びその作製方法
US7790483B2 (en) 2008-06-17 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof, and display device and manufacturing method thereof
US8207026B2 (en) 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
US8143170B2 (en) 2009-02-13 2012-03-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2010212677A (ja) * 2009-02-16 2010-09-24 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法及び表示装置の作製方法
JP2014238580A (ja) * 2009-02-16 2014-12-18 株式会社半導体エネルギー研究所 表示装置
US8709836B2 (en) 2009-02-16 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US7989234B2 (en) 2009-02-16 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8202769B2 (en) 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8441051B2 (en) 2009-03-11 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2010251733A (ja) * 2009-03-26 2010-11-04 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及び表示装置の作製方法
US8372700B2 (en) 2009-03-26 2013-02-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor
TWI755747B (zh) * 2009-10-16 2022-02-21 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
US11837461B2 (en) 2009-10-16 2023-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US12389631B2 (en) 2009-10-16 2025-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011160937A1 (fr) * 2010-06-21 2011-12-29 Imec Procédé de fabrication de transistors à couches minces et circuits à transistors
CN110462842A (zh) * 2017-04-07 2019-11-15 夏普株式会社 Tft基板、具备tft基板的扫描天线以及tft基板的制造方法
CN110462842B (zh) * 2017-04-07 2022-05-17 夏普株式会社 Tft基板、具备tft基板的扫描天线以及tft基板的制造方法

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