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WO2008099863A1 - Semi-conducteur, dispositif à semi-conducteur et dispositif de circuit à transistor complémentaire - Google Patents

Semi-conducteur, dispositif à semi-conducteur et dispositif de circuit à transistor complémentaire Download PDF

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Publication number
WO2008099863A1
WO2008099863A1 PCT/JP2008/052391 JP2008052391W WO2008099863A1 WO 2008099863 A1 WO2008099863 A1 WO 2008099863A1 JP 2008052391 W JP2008052391 W JP 2008052391W WO 2008099863 A1 WO2008099863 A1 WO 2008099863A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
electrode
transistor circuit
complementary transistor
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/052391
Other languages
English (en)
Japanese (ja)
Inventor
Koki Yano
Hajime Nakanotani
Chihaya Adachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyushu University NUC
Idemitsu Kosan Co Ltd
Original Assignee
Kyushu University NUC
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/806,995 external-priority patent/US8129714B2/en
Application filed by Kyushu University NUC, Idemitsu Kosan Co Ltd filed Critical Kyushu University NUC
Priority to JP2008558109A priority Critical patent/JP5551366B2/ja
Publication of WO2008099863A1 publication Critical patent/WO2008099863A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)

Abstract

La présente invention porte sur un dispositif à semi-conducteur comprenant un semi-conducteur (1), une première électrode (2), une couche isolante (3) formée entre le semi-conducteur (1) et la première électrode (2), une seconde électrode (4) qui est en contact avec le semi-conducteur (1) tout en étant espacée de la première électrode (2), et une troisième électrode (5) qui est en contact avec le semi-conducteur (1) tout en étant espacée de la première électrode (2) et de la seconde électrode (4). Le semi-conducteur (1) comprend une couche semi-conductrice organique (10) et une couche semi-conductrice oxyde (11).
PCT/JP2008/052391 2007-02-16 2008-02-14 Semi-conducteur, dispositif à semi-conducteur et dispositif de circuit à transistor complémentaire Ceased WO2008099863A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008558109A JP5551366B2 (ja) 2007-02-16 2008-02-14 半導体，半導体装置及び相補型トランジスタ回路装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-036580 2007-02-16
JP2007036580 2007-02-16
US11/806,995 US8129714B2 (en) 2007-02-16 2007-06-05 Semiconductor, semiconductor device, complementary transistor circuit device
US11/806,995 2007-06-05

Publications (1)

Publication Number Publication Date
WO2008099863A1 true WO2008099863A1 (fr) 2008-08-21

Family

ID=39690090

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052391 Ceased WO2008099863A1 (fr) 2007-02-16 2008-02-14 Semi-conducteur, dispositif à semi-conducteur et dispositif de circuit à transistor complémentaire

Country Status (1)

Country Link
WO (1) WO2008099863A1 (fr)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009028453A1 (fr) * 2007-08-31 2009-03-05 Konica Minolta Holdings, Inc. Transistor à couches minces
JP2009218562A (ja) * 2008-03-07 2009-09-24 Samsung Electronics Co Ltd トランジスタ及びその製造方法
JP2010114184A (ja) * 2008-11-05 2010-05-20 Univ Of Yamanashi アンバイポーラ型有機電界効果トランジスタ
WO2010119952A1 (fr) * 2009-04-17 2010-10-21 株式会社ブリヂストン Transistor à film mince et son procédé de fabrication
WO2011062048A1 (fr) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor à couches minces
JP2011146694A (ja) * 2009-12-18 2011-07-28 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
JP2011192929A (ja) * 2010-03-16 2011-09-29 Ricoh Co Ltd 半導体位置検出器および光センサー
JP2013115111A (ja) * 2011-11-25 2013-06-10 Hitachi Ltd 酸化物半導体装置およびその製造方法
JP2013128097A (ja) * 2011-12-16 2013-06-27 Industrial Technology Research Institute 両極性トランジスタデバイス構造およびその製造方法
JP2013191850A (ja) * 2007-03-20 2013-09-26 Idemitsu Kosan Co Ltd スパッタリングターゲット、酸化物半導体膜及び半導体デバイス
KR101372734B1 (ko) 2012-02-15 2014-03-13 연세대학교 산학협력단 액상공정을 이용한 박막 트랜지스터 및 그 제조방법
JP2015062248A (ja) * 2009-11-28 2015-04-02 株式会社半導体エネルギー研究所 半導体装置
JP2015164203A (ja) * 2009-10-05 2015-09-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2017195417A (ja) * 2009-12-04 2017-10-26 株式会社半導体エネルギー研究所 電子機器
KR101820703B1 (ko) 2016-07-29 2018-03-08 엘지디스플레이 주식회사 박막 트랜지스터, 그의 제조 방법, 및 그를 포함한 표시장치
JP2018061047A (ja) * 2010-09-13 2018-04-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2019220716A (ja) * 2009-10-30 2019-12-26 株式会社半導体エネルギー研究所 半導体装置
JP2020017743A (ja) * 2010-02-05 2020-01-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN111416040A (zh) * 2020-03-11 2020-07-14 深圳大学 一种双极性薄膜晶体管及其制备方法
JP2020188277A (ja) * 2009-10-16 2020-11-19 株式会社半導体エネルギー研究所 半導体装置
JP2021044559A (ja) * 2010-03-05 2021-03-18 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188165A (ja) * 1982-04-28 1983-11-02 Nec Corp 半導体装置
JPH08228034A (ja) * 1994-12-09 1996-09-03 At & T Corp 有機薄膜トランジスタ装置
JPH09199732A (ja) * 1996-01-16 1997-07-31 Lucent Technol Inc トランジスタからなる製品
JP2006502597A (ja) * 2002-05-21 2006-01-19 ザ・ステート・オブ・オレゴン・アクティング・バイ・アンド・スルー・ザ・ステート・ボード・オブ・ハイヤー・エデュケーション・オン・ビハーフ・オブ・オレゴン・ステート・ユニバーシティ トランジスタ構造及びその製作方法
JP2006165532A (ja) * 2004-11-10 2006-06-22 Canon Inc 非晶質酸化物を利用した半導体デバイス

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188165A (ja) * 1982-04-28 1983-11-02 Nec Corp 半導体装置
JPH08228034A (ja) * 1994-12-09 1996-09-03 At & T Corp 有機薄膜トランジスタ装置
JPH09199732A (ja) * 1996-01-16 1997-07-31 Lucent Technol Inc トランジスタからなる製品
JP2006502597A (ja) * 2002-05-21 2006-01-19 ザ・ステート・オブ・オレゴン・アクティング・バイ・アンド・スルー・ザ・ステート・ボード・オブ・ハイヤー・エデュケーション・オン・ビハーフ・オブ・オレゴン・ステート・ユニバーシティ トランジスタ構造及びその製作方法
JP2006165532A (ja) * 2004-11-10 2006-06-22 Canon Inc 非晶質酸化物を利用した半導体デバイス

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013191850A (ja) * 2007-03-20 2013-09-26 Idemitsu Kosan Co Ltd スパッタリングターゲット、酸化物半導体膜及び半導体デバイス
WO2009028453A1 (fr) * 2007-08-31 2009-03-05 Konica Minolta Holdings, Inc. Transistor à couches minces
JP2009218562A (ja) * 2008-03-07 2009-09-24 Samsung Electronics Co Ltd トランジスタ及びその製造方法
JP2010114184A (ja) * 2008-11-05 2010-05-20 Univ Of Yamanashi アンバイポーラ型有機電界効果トランジスタ
WO2010119952A1 (fr) * 2009-04-17 2010-10-21 株式会社ブリヂストン Transistor à film mince et son procédé de fabrication
CN102460712A (zh) * 2009-04-17 2012-05-16 株式会社普利司通 薄膜晶体管以及薄膜晶体管的制造方法
JP2015164203A (ja) * 2009-10-05 2015-09-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9754784B2 (en) 2009-10-05 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device
US9627198B2 (en) 2009-10-05 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film semiconductor device
JP7072613B2 (ja) 2009-10-16 2022-05-20 株式会社半導体エネルギー研究所 半導体装置
JP2020188277A (ja) * 2009-10-16 2020-11-19 株式会社半導体エネルギー研究所 半導体装置
JP2019220716A (ja) * 2009-10-30 2019-12-26 株式会社半導体エネルギー研究所 半導体装置
WO2011062048A1 (fr) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor à couches minces
US8963149B2 (en) 2009-11-20 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8766250B2 (en) 2009-11-20 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US9306075B2 (en) 2009-11-20 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US9368640B2 (en) 2009-11-28 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with stacked oxide semiconductor films
JP2015062248A (ja) * 2009-11-28 2015-04-02 株式会社半導体エネルギー研究所 半導体装置
JP2017195417A (ja) * 2009-12-04 2017-10-26 株式会社半導体エネルギー研究所 電子機器
US9378980B2 (en) 2009-12-18 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9728651B2 (en) 2009-12-18 2017-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2011146694A (ja) * 2009-12-18 2011-07-28 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
US9240488B2 (en) 2009-12-18 2016-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10453964B2 (en) 2009-12-18 2019-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2020017743A (ja) * 2010-02-05 2020-01-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP7101739B2 (ja) 2010-03-05 2022-07-15 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法及びトランジスタの作製方法
JP2021044559A (ja) * 2010-03-05 2021-03-18 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
JP2011192929A (ja) * 2010-03-16 2011-09-29 Ricoh Co Ltd 半導体位置検出器および光センサー
JP2018061047A (ja) * 2010-09-13 2018-04-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10586869B2 (en) 2010-09-13 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013115111A (ja) * 2011-11-25 2013-06-10 Hitachi Ltd 酸化物半導体装置およびその製造方法
JP2013128097A (ja) * 2011-12-16 2013-06-27 Industrial Technology Research Institute 両極性トランジスタデバイス構造およびその製造方法
KR101372734B1 (ko) 2012-02-15 2014-03-13 연세대학교 산학협력단 액상공정을 이용한 박막 트랜지스터 및 그 제조방법
KR101820703B1 (ko) 2016-07-29 2018-03-08 엘지디스플레이 주식회사 박막 트랜지스터, 그의 제조 방법, 및 그를 포함한 표시장치
CN111416040A (zh) * 2020-03-11 2020-07-14 深圳大学 一种双极性薄膜晶体管及其制备方法
CN111416040B (zh) * 2020-03-11 2023-11-14 深圳大学 一种双极性薄膜晶体管及其制备方法

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