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WO2009013938A1 - 圧電共振子及び圧電フィルタ装置 - Google Patents

圧電共振子及び圧電フィルタ装置 Download PDF

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Publication number
WO2009013938A1
WO2009013938A1 PCT/JP2008/060131 JP2008060131W WO2009013938A1 WO 2009013938 A1 WO2009013938 A1 WO 2009013938A1 JP 2008060131 W JP2008060131 W JP 2008060131W WO 2009013938 A1 WO2009013938 A1 WO 2009013938A1
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WO
WIPO (PCT)
Prior art keywords
piezoelectric
electrode
thin film
acoustic impedance
laminated body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/060131
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English (en)
French (fr)
Inventor
Keiichi Umeda
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Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2009524416A priority Critical patent/JPWO2009013938A1/ja
Publication of WO2009013938A1 publication Critical patent/WO2009013938A1/ja
Priority to US12/683,092 priority patent/US20100134210A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/105—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

　圧電薄膜の面方向に沿う不要振動によるスプリアスがなく、挿入損失の増大を図り得る圧電フィルタ装置を得る。 　相対的に音響インピーダンスが低い材料からなる第１の音響インピーダンス層５ａ～５ｃと、相対的に音響インピーダンスが高い材料からなる第２の音響インピーダンス層５ｄ，５ｅとを有する音響反射層５と、前記音響反射層５上に設けられた薄膜積層体６とを備え、薄膜積層体６が、圧電薄膜９と、第１の電極１０と、第１の電極１０よりも大きな第２の電極１１とを有し、第２の電極１１が前記音響反射層５上に形成されており、圧電振動部の外側の領域の少なくとも一部において、前記第１の電極１０の周囲に設けられた質量付加膜１４をさらに備え、前記第２の電極１１が、平面視した際に、圧電振動部を超えて質量付加膜１４が設けられている領域に至るように形成されている、圧電共振子３。
PCT/JP2008/060131 2007-07-20 2008-06-02 圧電共振子及び圧電フィルタ装置 Ceased WO2009013938A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009524416A JPWO2009013938A1 (ja) 2007-07-20 2008-06-02 圧電共振子及び圧電フィルタ装置
US12/683,092 US20100134210A1 (en) 2007-07-20 2010-01-06 Piezoelectric Resonator and Piezoelectric Filter Device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-189901 2007-07-20
JP2007189901 2007-07-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/683,092 Continuation US20100134210A1 (en) 2007-07-20 2010-01-06 Piezoelectric Resonator and Piezoelectric Filter Device

Publications (1)

Publication Number Publication Date
WO2009013938A1 true WO2009013938A1 (ja) 2009-01-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060131 Ceased WO2009013938A1 (ja) 2007-07-20 2008-06-02 圧電共振子及び圧電フィルタ装置

Country Status (3)

Country Link
US (1) US20100134210A1 (ja)
JP (1) JPWO2009013938A1 (ja)
WO (1) WO2009013938A1 (ja)

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US20110298564A1 (en) * 2009-02-20 2011-12-08 Kazuki Iwashita Thin-Film Piezoelectric Resonator and Thin-Film Piezoelectric Filter Using the Same
US20120182090A1 (en) * 2011-01-19 2012-07-19 Wei Pang Acoustic wave resonator
JP2014176095A (ja) * 2013-03-12 2014-09-22 Triquint Semiconductor Inc 強固に固定されたバルク弾性波共振器における境界リングモード抑制
EP2306641B1 (fr) * 2009-10-01 2017-03-29 STmicroelectronics SA Procédé de fabrication de résonateur BAW à facteur de qualité élevé
JP2018037906A (ja) * 2016-08-31 2018-03-08 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ。
JP2019092096A (ja) * 2017-11-16 2019-06-13 太陽誘電株式会社 弾性波デバイスおよびその製造方法、フィルタ並びにマルチプレクサ
JP2019193168A (ja) * 2018-04-26 2019-10-31 サムソン エレクトロ−メカニックス カンパニーリミテッド． バルク音響共振器及びその製造方法
US10715099B2 (en) 2016-10-28 2020-07-14 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator and method for manufacturing the same
JP2020202564A (ja) * 2019-06-12 2020-12-17 ツー−シックス デラウェア インコーポレイテッドＩＩ−ＶＩ Ｄｅｌａｗａｒｅ，Ｉｎｃ． 電極画定された非サスペンデッド音響共振器
WO2021112214A1 (ja) * 2019-12-06 2021-06-10 株式会社村田製作所 弾性波装置
US11133791B2 (en) 2015-05-13 2021-09-28 Qorvo Us, Inc. Spurious mode suppression in bulk acoustic wave resonator
JP2021532659A (ja) * 2018-08-01 2021-11-25 アールエフ３６０・ヨーロップ・ゲーエムベーハー 改良された上部電極接続部を有するｂａｗ共振器
JP2024533671A (ja) * 2021-10-15 2024-09-12 ウーハン イエンシー マイクロ コンポーネンツ カンパニーリミテッド バルク弾性波共振構造およびその製造方法、弾性波デバイス

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WO2016147986A1 (ja) * 2015-03-16 2016-09-22 株式会社村田製作所 弾性波装置及びその製造方法
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US10608611B2 (en) * 2016-03-10 2020-03-31 Qorvo Us, Inc. Bulk acoustic wave resonator with electrically isolated border ring
JP2017229194A (ja) * 2016-06-24 2017-12-28 セイコーエプソン株式会社 Ｍｅｍｓデバイス、圧電アクチュエーター、及び、超音波モーター
US10038422B2 (en) * 2016-08-25 2018-07-31 Qualcomm Incorporated Single-chip multi-frequency film bulk acoustic-wave resonators
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Publication number Priority date Publication date Assignee Title
US20110298564A1 (en) * 2009-02-20 2011-12-08 Kazuki Iwashita Thin-Film Piezoelectric Resonator and Thin-Film Piezoelectric Filter Using the Same
US8854156B2 (en) * 2009-02-20 2014-10-07 Ube Industries, Ltd. Thin-film piezoelectric resonator and thin-film piezoelectric filter using the same
EP2306641B1 (fr) * 2009-10-01 2017-03-29 STmicroelectronics SA Procédé de fabrication de résonateur BAW à facteur de qualité élevé
US20120182090A1 (en) * 2011-01-19 2012-07-19 Wei Pang Acoustic wave resonator
US8791776B2 (en) * 2011-01-19 2014-07-29 Wei Pang Acoustic wave resonator having a gasket
JP2014176095A (ja) * 2013-03-12 2014-09-22 Triquint Semiconductor Inc 強固に固定されたバルク弾性波共振器における境界リングモード抑制
US11133791B2 (en) 2015-05-13 2021-09-28 Qorvo Us, Inc. Spurious mode suppression in bulk acoustic wave resonator
JP2018037906A (ja) * 2016-08-31 2018-03-08 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ。
US10715099B2 (en) 2016-10-28 2020-07-14 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator and method for manufacturing the same
JP2019092096A (ja) * 2017-11-16 2019-06-13 太陽誘電株式会社 弾性波デバイスおよびその製造方法、フィルタ並びにマルチプレクサ
JP7037336B2 (ja) 2017-11-16 2022-03-16 太陽誘電株式会社 弾性波デバイスおよびその製造方法、フィルタ並びにマルチプレクサ
JP2019193168A (ja) * 2018-04-26 2019-10-31 サムソン エレクトロ−メカニックス カンパニーリミテッド． バルク音響共振器及びその製造方法
JP2021532659A (ja) * 2018-08-01 2021-11-25 アールエフ３６０・ヨーロップ・ゲーエムベーハー 改良された上部電極接続部を有するｂａｗ共振器
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JP2020202564A (ja) * 2019-06-12 2020-12-17 ツー−シックス デラウェア インコーポレイテッドＩＩ−ＶＩ Ｄｅｌａｗａｒｅ，Ｉｎｃ． 電極画定された非サスペンデッド音響共振器
WO2021112214A1 (ja) * 2019-12-06 2021-06-10 株式会社村田製作所 弾性波装置
US12395149B2 (en) 2019-12-06 2025-08-19 Murata Manufacturing Co., Ltd. Acoustic wave device
JP2024533671A (ja) * 2021-10-15 2024-09-12 ウーハン イエンシー マイクロ コンポーネンツ カンパニーリミテッド バルク弾性波共振構造およびその製造方法、弾性波デバイス
JP7662899B2 (ja) 2021-10-15 2025-04-15 ウーハン イエンシー マイクロ コンポーネンツ カンパニーリミテッド バルク弾性波共振構造およびその製造方法、弾性波デバイス

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