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WO2008090651A1 - 圧電共振子及び圧電フィルタ - Google Patents

圧電共振子及び圧電フィルタ Download PDF

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Publication number
WO2008090651A1
WO2008090651A1 PCT/JP2007/070662 JP2007070662W WO2008090651A1 WO 2008090651 A1 WO2008090651 A1 WO 2008090651A1 JP 2007070662 W JP2007070662 W JP 2007070662W WO 2008090651 A1 WO2008090651 A1 WO 2008090651A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
piezoelectric
section
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/070662
Other languages
English (en)
French (fr)
Inventor
Keiichi Umeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2008554962A priority Critical patent/JP5018788B2/ja
Priority to DE112007002969.2T priority patent/DE112007002969B4/de
Publication of WO2008090651A1 publication Critical patent/WO2008090651A1/ja
Priority to US12/495,889 priority patent/US7924120B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

　放熱性を向上すると同時に、不要振動による発熱を防ぐことができる、圧電共振子及び圧電フィルタを提供する。 　圧電共振子１０は、基板２１と、薄膜部とを備える。薄膜部は、基板１２に支持される第１の薄膜部Ｓと基板１２から離れて音響的に分離されている第２の薄膜部Ｒ，Ｌ，Ｗとを含み、第２の薄膜部Ｒ，Ｌ，Ｗは圧電膜１７の両主面にそれぞれ第１及び第２の電極１６，１８が配置され、膜厚方向に透視したときに第２の薄膜部Ｒ，Ｌ，Ｗにおいて第１及び第２の電極１６，１８が重なり合っている部分に振動部２４が形成されている。薄膜部は、振動部２４の外周の一部を形成する第１又は第２の電極の少なくとも一方１８の周縁１８ａ，１８ｂ，１８ｃに接し又は重なり、かつ、膜厚方向に透視したときに周縁１８ａ，１８ｂ，１８ｃから第１の薄膜部Ｓまで延在する放熱膜２０を有する。
PCT/JP2007/070662 2007-01-24 2007-10-23 圧電共振子及び圧電フィルタ Ceased WO2008090651A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008554962A JP5018788B2 (ja) 2007-01-24 2007-10-23 圧電共振子及び圧電フィルタ
DE112007002969.2T DE112007002969B4 (de) 2007-01-24 2007-10-23 Piezoelektrischer Resonator und piezoelektrisches Filter
US12/495,889 US7924120B2 (en) 2007-01-24 2009-07-01 Piezoelectric resonator and piezoelectric filter having a heat-radiating film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-013846 2007-01-24
JP2007013846 2007-01-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/495,889 Continuation US7924120B2 (en) 2007-01-24 2009-07-01 Piezoelectric resonator and piezoelectric filter having a heat-radiating film

Publications (1)

Publication Number Publication Date
WO2008090651A1 true WO2008090651A1 (ja) 2008-07-31

Family

ID=39644229

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/070662 Ceased WO2008090651A1 (ja) 2007-01-24 2007-10-23 圧電共振子及び圧電フィルタ

Country Status (4)

Country Link
US (1) US7924120B2 (ja)
JP (1) JP5018788B2 (ja)
DE (1) DE112007002969B4 (ja)
WO (1) WO2008090651A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110298564A1 (en) * 2009-02-20 2011-12-08 Kazuki Iwashita Thin-Film Piezoelectric Resonator and Thin-Film Piezoelectric Filter Using the Same
JP2014209728A (ja) * 2013-03-29 2014-11-06 セイコーエプソン株式会社 超音波トランスデューサー装置およびプローブ並びに電子機器および超音波画像装置
WO2017051681A1 (ja) * 2015-09-24 2017-03-30 ミツミ電機株式会社 圧電素子及びその製造方法、圧電アクチュエータ
JP2017536049A (ja) * 2014-11-25 2017-11-30 スナップトラック・インコーポレーテッド 自己発熱が低減されたｂａｗ共振器、共振器を備える高周波フィルタ、高周波フィルタを備えるデュプレクサ、及びその製造方法
JP2018037906A (ja) * 2016-08-31 2018-03-08 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ。
JP2023179626A (ja) * 2018-09-24 2023-12-19 スカイワークス グローバル プライベート リミテッド バルク弾性波デバイスにおける多層隆起フレーム
US12278611B2 (en) 2020-09-18 2025-04-15 Skyworks Global Pte. Ltd. Multi-gradient raised frame in bulk acoustic wave device

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US8291559B2 (en) * 2009-02-24 2012-10-23 Epcos Ag Process for adapting resonance frequency of a BAW resonator
US8283999B2 (en) * 2010-02-23 2012-10-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator structures comprising a single material acoustic coupling layer comprising inhomogeneous acoustic property
US8830012B2 (en) * 2010-09-07 2014-09-09 Wei Pang Composite bulk acoustic wave resonator
US9911836B2 (en) 2011-02-25 2018-03-06 Qorvo Us, Inc. Vertical ballast technology for power HBT device
US9897512B2 (en) * 2011-04-15 2018-02-20 Qorvo Us, Inc. Laminate variables measured electrically
JP5394451B2 (ja) * 2011-07-26 2014-01-22 株式会社アドバンテスト アクチュエータの製造方法、スイッチ装置、伝送路切替装置、および試験装置
KR101959204B1 (ko) * 2013-01-09 2019-07-04 삼성전자주식회사 무선 주파수 필터 및 무선 주파수 필터의 제조방법
DE102015120341A1 (de) * 2015-11-24 2017-05-24 Snaptrack, Inc. Bauelement mit Wärmeableitung
US10778180B2 (en) * 2015-12-10 2020-09-15 Qorvo Us, Inc. Bulk acoustic wave resonator with a modified outside stack portion
US10396755B2 (en) * 2016-02-17 2019-08-27 Samsung Electro-Mechanics Co., Ltd. Resonator having frame and method of manufacturing the same
DE102017129160B3 (de) * 2017-12-07 2019-01-31 RF360 Europe GmbH Elektroakustisches Resonatorbauelement und Verfahren zu dessen Herstellung
CN111193490B (zh) * 2018-11-14 2025-05-13 天津大学 散热结构、带散热结构的体声波谐振器、滤波器和电子设备
CN111342797B (zh) * 2018-12-18 2025-10-17 天津大学 压电滤波器及具有其的电子设备
KR102712626B1 (ko) 2019-06-14 2024-10-02 삼성전기주식회사 체적 음향 공진기
CN111342792B (zh) * 2020-02-19 2021-05-25 见闻录(浙江)半导体有限公司 一种具有电磁屏蔽结构的固态装配谐振器及制作工艺

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07260660A (ja) * 1994-03-26 1995-10-13 Kinseki Ltd センサ用圧電振動子の周波数調整方法
JP2001502136A (ja) * 1996-10-10 2001-02-13 ノキア モービル フォーンズ リミテッド 薄膜バルク音波共振子（ｆｂａｒ）をウェーハ上で同調させる方法
JP2002237738A (ja) * 2000-12-06 2002-08-23 Murata Mfg Co Ltd 圧電共振子、圧電フィルタおよびデュプレクサ
JP2003204239A (ja) * 2001-10-26 2003-07-18 Fujitsu Ltd 圧電薄膜共振子、フィルタ、および圧電薄膜共振子の製造方法
JP2004221622A (ja) * 2002-01-08 2004-08-05 Murata Mfg Co Ltd 圧電共振子、圧電フィルタ、デュプレクサ、通信装置および圧電共振子の製造方法
WO2006027873A1 (ja) * 2004-09-10 2006-03-16 Murata Manufacturing Co., Ltd. 圧電薄膜共振子

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JP2003168953A (ja) * 2001-09-20 2003-06-13 Murata Mfg Co Ltd 圧電共振子、これを用いた圧電フィルタ、デュプレクサ、通信装置
US6906451B2 (en) 2002-01-08 2005-06-14 Murata Manufacturing Co., Ltd. Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator
JP3879643B2 (ja) 2002-09-25 2007-02-14 株式会社村田製作所 圧電共振子、圧電フィルタ、通信装置
US7522018B2 (en) * 2002-12-13 2009-04-21 Nxp B.V. Electro-acoustic resonator with a top electrode layer thinner than a bottom electrode layer
US7164222B2 (en) * 2003-06-26 2007-01-16 Intel Corporation Film bulk acoustic resonator (FBAR) with high thermal conductivity
KR101323447B1 (ko) * 2003-10-06 2013-10-29 트리퀸트 세미컨덕터 인코퍼레이티드 사다리형 필터, 무선 주파수 대역 통과 필터, 무선 주파수 수신기 및 송신기 장치, 무선 주파수 수신기 장치 및 무선 주파수 송신기 장치
ATE535055T1 (de) * 2005-02-21 2011-12-15 Murata Manufacturing Co Piezoelektrischer dünnfilmresonator
JP4849445B2 (ja) * 2006-03-06 2012-01-11 学校法人同志社 薄膜共振器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07260660A (ja) * 1994-03-26 1995-10-13 Kinseki Ltd センサ用圧電振動子の周波数調整方法
JP2001502136A (ja) * 1996-10-10 2001-02-13 ノキア モービル フォーンズ リミテッド 薄膜バルク音波共振子（ｆｂａｒ）をウェーハ上で同調させる方法
JP2002237738A (ja) * 2000-12-06 2002-08-23 Murata Mfg Co Ltd 圧電共振子、圧電フィルタおよびデュプレクサ
JP2003204239A (ja) * 2001-10-26 2003-07-18 Fujitsu Ltd 圧電薄膜共振子、フィルタ、および圧電薄膜共振子の製造方法
JP2004221622A (ja) * 2002-01-08 2004-08-05 Murata Mfg Co Ltd 圧電共振子、圧電フィルタ、デュプレクサ、通信装置および圧電共振子の製造方法
WO2006027873A1 (ja) * 2004-09-10 2006-03-16 Murata Manufacturing Co., Ltd. 圧電薄膜共振子

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8854156B2 (en) * 2009-02-20 2014-10-07 Ube Industries, Ltd. Thin-film piezoelectric resonator and thin-film piezoelectric filter using the same
US20110298564A1 (en) * 2009-02-20 2011-12-08 Kazuki Iwashita Thin-Film Piezoelectric Resonator and Thin-Film Piezoelectric Filter Using the Same
JP2014209728A (ja) * 2013-03-29 2014-11-06 セイコーエプソン株式会社 超音波トランスデューサー装置およびプローブ並びに電子機器および超音波画像装置
JP2017536049A (ja) * 2014-11-25 2017-11-30 スナップトラック・インコーポレーテッド 自己発熱が低減されたｂａｗ共振器、共振器を備える高周波フィルタ、高周波フィルタを備えるデュプレクサ、及びその製造方法
EP3340325A4 (en) * 2015-09-24 2018-10-10 Mitsumi Electric Co., Ltd. Piezoelectric element, method for producing same and piezoelectric actuator
WO2017051681A1 (ja) * 2015-09-24 2017-03-30 ミツミ電機株式会社 圧電素子及びその製造方法、圧電アクチュエータ
JP2018037906A (ja) * 2016-08-31 2018-03-08 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ。
JP2023179626A (ja) * 2018-09-24 2023-12-19 スカイワークス グローバル プライベート リミテッド バルク弾性波デバイスにおける多層隆起フレーム
JP7618760B2 (ja) 2018-09-24 2025-01-21 スカイワークス グローバル プライベート リミテッド バルク弾性波デバイスにおける多層隆起フレーム
JP2025066737A (ja) * 2018-09-24 2025-04-23 スカイワークス グローバル プライベート リミテッド マルチプレクサ、無線通信デバイス及びバルク弾性波デバイス
US12341486B2 (en) 2018-09-24 2025-06-24 Skyworks Global Pte. Ltd. Multi-layer raised frame in bulk acoustic wave device
US12278611B2 (en) 2020-09-18 2025-04-15 Skyworks Global Pte. Ltd. Multi-gradient raised frame in bulk acoustic wave device
US12283937B2 (en) 2020-09-18 2025-04-22 Skyworks Global Pte. Ltd. Bulk acoustic wave device with multi-gradient raised frame

Also Published As

Publication number Publication date
US7924120B2 (en) 2011-04-12
DE112007002969T5 (de) 2009-09-24
DE112007002969B4 (de) 2017-12-21
JPWO2008090651A1 (ja) 2010-05-13
JP5018788B2 (ja) 2012-09-05
US20090261922A1 (en) 2009-10-22

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