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WO2008126473A1 - 圧電薄膜フィルタ - Google Patents

圧電薄膜フィルタ Download PDF

Info

Publication number
WO2008126473A1
WO2008126473A1 PCT/JP2008/052770 JP2008052770W WO2008126473A1 WO 2008126473 A1 WO2008126473 A1 WO 2008126473A1 JP 2008052770 W JP2008052770 W JP 2008052770W WO 2008126473 A1 WO2008126473 A1 WO 2008126473A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
piezoelectric thin
film filter
resonator
suppressed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/052770
Other languages
English (en)
French (fr)
Inventor
Keiichi Umeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2009508952A priority Critical patent/JP5013227B2/ja
Publication of WO2008126473A1 publication Critical patent/WO2008126473A1/ja
Priority to US12/547,633 priority patent/US8610516B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/0023—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns, or networks having balanced input and output
    • H03H9/0095—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns, or networks having balanced input and output using bulk acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/0211—Means for compensation or elimination of undesirable effects of reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

　挿入損失や肩のキレの劣化を抑えるとともに、通過帯域内のリップルを抑制することができる圧電薄膜フィルタを提供する。 　第１及び第２の振動部２０ｓ；２０ｐは、基板１２の一方主面１２ａに沿って一対の電極１５ｓ，１７ｓ；１５ｐ，１７ｐの間に圧電薄膜１６が配置され、基板１２から音響的に分離されている。第１の共振子Ｓ１は、厚み方向から見たときに、第１の振動部２０ｓの外周の全長の半分以上を形成する一方の電極１７ｓに接して外側に、付加膜２２が配置されている。第２の共振子Ｐ１は、厚み方向から見たときに、第２の振動部２０ｐの外形が多角形であり、該多角形の各辺が他のいずれの辺とも非平行である。
PCT/JP2008/052770 2007-04-11 2008-02-19 圧電薄膜フィルタ Ceased WO2008126473A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009508952A JP5013227B2 (ja) 2007-04-11 2008-02-19 圧電薄膜フィルタ
US12/547,633 US8610516B2 (en) 2007-04-11 2009-08-26 Piezoelectric thin-film filter

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007103531 2007-04-11
JP2007-103531 2007-04-11

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/547,633 Continuation US8610516B2 (en) 2007-04-11 2009-08-26 Piezoelectric thin-film filter

Publications (1)

Publication Number Publication Date
WO2008126473A1 true WO2008126473A1 (ja) 2008-10-23

Family

ID=39863630

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052770 Ceased WO2008126473A1 (ja) 2007-04-11 2008-02-19 圧電薄膜フィルタ

Country Status (3)

Country Link
US (1) US8610516B2 (ja)
JP (1) JP5013227B2 (ja)
WO (1) WO2008126473A1 (ja)

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WO2010061496A1 (ja) * 2008-11-25 2010-06-03 株式会社村田製作所 弾性波フィルタ装置
WO2011086986A1 (ja) * 2010-01-14 2011-07-21 太陽誘電株式会社 弾性波デバイス、フィルタ、通信モジュール、通信装置
JP2015012397A (ja) * 2013-06-27 2015-01-19 太陽誘電株式会社 分波器
US8941450B2 (en) 2009-09-28 2015-01-27 Taiyo Yuden Co., Ltd. Acoustic wave device having a frequency control film
WO2017026257A1 (ja) * 2015-08-07 2017-02-16 株式会社Ｐｉｅｚｏ Ｓｔｕｄｉｏ 圧電薄膜素子の製造方法
JP2020191637A (ja) * 2019-05-23 2020-11-26 スカイワークス グローバル プライベート リミテッド 散乱側面を備えた陥凹フレームを含む薄膜バルク弾性共振器
JP2021536720A (ja) * 2018-09-07 2021-12-27 ヴェーテーテー・テクニカル・リサーチ・センター・オブ・フィンランド・リミテッド 弾性波共振器の周波数応答を調整するための負荷をかけられた共振器
US11979140B2 (en) 2018-09-12 2024-05-07 Skyworks Global Pte. Ltd. Recess frame structure for reduction of spurious signals in a bulk acoustic wave resonator
US12334908B2 (en) 2021-12-10 2025-06-17 Skyworks Solutions, Inc. Bulk acoustic wave filters for improving noise factor
US12483223B2 (en) 2021-06-03 2025-11-25 Skyworks Global Pte. Ltd. Radio frequency acoustic device with laterally distributed reflectors
US12483225B2 (en) 2021-05-14 2025-11-25 Skyworks Global Pte. Ltd. Bulk acoustic wave resonator with oxide raised frame

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US7791434B2 (en) * 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
US9243316B2 (en) * 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US8673121B2 (en) 2010-01-22 2014-03-18 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric materials with opposite C-axis orientations
US9679765B2 (en) 2010-01-22 2017-06-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating rare-earth doped piezoelectric material with various amounts of dopants and a selected C-axis orientation
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US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
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US9490418B2 (en) 2011-03-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US8350445B1 (en) 2011-06-16 2013-01-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer and bridge
US9577603B2 (en) * 2011-09-14 2017-02-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Solidly mounted acoustic resonator having multiple lateral features
CN104321965B (zh) * 2012-05-22 2017-04-12 株式会社村田制作所 体波谐振器
US10340885B2 (en) 2014-05-08 2019-07-02 Avago Technologies International Sales Pte. Limited Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes
DE102014117238B4 (de) * 2014-11-25 2017-11-02 Snaptrack, Inc. BAW-Resonator mit verringerter Eigenerwärmung, HF-Filter mit BAW-Resonator, Duplexer mit HF-Filter und Verfahren zur Herstellung
KR101973422B1 (ko) 2014-12-05 2019-04-29 삼성전기주식회사 벌크 탄성파 공진기
KR20160068298A (ko) 2014-12-05 2016-06-15 삼성전기주식회사 벌크 탄성파 필터
US10778180B2 (en) * 2015-12-10 2020-09-15 Qorvo Us, Inc. Bulk acoustic wave resonator with a modified outside stack portion
KR102642910B1 (ko) * 2016-05-18 2024-03-04 삼성전기주식회사 음향 공진기 및 그 제조 방법
US10833646B2 (en) * 2016-10-12 2020-11-10 Samsung Electro-Mechanics Co., Ltd. Bulk-acoustic wave resonator and method for manufacturing the same
TWI632772B (zh) * 2016-10-17 2018-08-11 穩懋半導體股份有限公司 具有質量調整結構之體聲波共振器及其應用於體聲波濾波器
CN108023563B (zh) * 2016-11-01 2021-03-26 稳懋半导体股份有限公司 具质量调整结构的体声波共振器及其应用于体声波滤波器
CN111371429B (zh) * 2018-12-26 2022-07-12 中芯集成电路（宁波）有限公司上海分公司 控制电路与声波滤波器的集成方法和集成结构
JP7259872B2 (ja) * 2019-01-31 2023-04-18 株式会社村田製作所 弾性波装置
CN111010099B (zh) * 2019-03-02 2024-08-20 天津大学 带凹陷结构和凸结构的体声波谐振器、滤波器及电子设备
US11601113B2 (en) * 2019-05-24 2023-03-07 Skyworks Global Pte. Ltd. Bulk acoustic wave/film bulk acoustic wave resonator and filter for wide bandwidth applications
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KR20210126966A (ko) 2020-04-13 2021-10-21 삼성전기주식회사 체적 음향 공진기
IT202100013004A1 (it) * 2021-05-19 2022-11-19 Spectron Microsystems S R L Dispositivo risonatore
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Cited By (20)

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US8106725B2 (en) 2008-11-25 2012-01-31 Murata Manufacturing Co., Ltd. Acoustic wave filter device
JP5018894B2 (ja) * 2008-11-25 2012-09-05 株式会社村田製作所 弾性波フィルタ装置
WO2010061496A1 (ja) * 2008-11-25 2010-06-03 株式会社村田製作所 弾性波フィルタ装置
US8941450B2 (en) 2009-09-28 2015-01-27 Taiyo Yuden Co., Ltd. Acoustic wave device having a frequency control film
WO2011086986A1 (ja) * 2010-01-14 2011-07-21 太陽誘電株式会社 弾性波デバイス、フィルタ、通信モジュール、通信装置
JP5750052B2 (ja) * 2010-01-14 2015-07-15 太陽誘電株式会社 弾性波デバイス、フィルタ、通信モジュール、通信装置
US9722575B2 (en) 2013-06-27 2017-08-01 Taiyo Yuden Co., Ltd. Duplexer
JP2015012397A (ja) * 2013-06-27 2015-01-19 太陽誘電株式会社 分波器
US10771032B2 (en) 2015-08-07 2020-09-08 Piezo Studio Inc. Method for manufacturing piezoelectric thin-film element
JPWO2017026257A1 (ja) * 2015-08-07 2018-05-31 株式会社Ｐｉｅｚｏ Ｓｔｕｄｉｏ 圧電薄膜素子の製造方法
WO2017026257A1 (ja) * 2015-08-07 2017-02-16 株式会社Ｐｉｅｚｏ Ｓｔｕｄｉｏ 圧電薄膜素子の製造方法
JP2021536720A (ja) * 2018-09-07 2021-12-27 ヴェーテーテー・テクニカル・リサーチ・センター・オブ・フィンランド・リミテッド 弾性波共振器の周波数応答を調整するための負荷をかけられた共振器
JP7636327B2 (ja) 2018-09-07 2025-02-26 ヴェーテーテー・テクニカル・リサーチ・センター・オブ・フィンランド・リミテッド 弾性波共振器の周波数応答を調整するための負荷をかけられた共振器
US12341491B2 (en) 2018-09-07 2025-06-24 Teknologian Tutkimuskeskus Vtt Oy Loaded resonators for adjusting frequency response of acoustic wave resonators
US11979140B2 (en) 2018-09-12 2024-05-07 Skyworks Global Pte. Ltd. Recess frame structure for reduction of spurious signals in a bulk acoustic wave resonator
JP2020191637A (ja) * 2019-05-23 2020-11-26 スカイワークス グローバル プライベート リミテッド 散乱側面を備えた陥凹フレームを含む薄膜バルク弾性共振器
JP7529439B2 (ja) 2019-05-23 2024-08-06 スカイワークス グローバル プライベート リミテッド 薄膜バルク弾性共振器、電子機器モジュール、電子デバイス及び無線周波数フィルタ
US12483225B2 (en) 2021-05-14 2025-11-25 Skyworks Global Pte. Ltd. Bulk acoustic wave resonator with oxide raised frame
US12483223B2 (en) 2021-06-03 2025-11-25 Skyworks Global Pte. Ltd. Radio frequency acoustic device with laterally distributed reflectors
US12334908B2 (en) 2021-12-10 2025-06-17 Skyworks Solutions, Inc. Bulk acoustic wave filters for improving noise factor

Also Published As

Publication number Publication date
JP5013227B2 (ja) 2012-08-29
US20100013573A1 (en) 2010-01-21
JPWO2008126473A1 (ja) 2010-07-22
US8610516B2 (en) 2013-12-17

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