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WO2009072525A1 - 半導体装置用ボンディングワイヤ - Google Patents

半導体装置用ボンディングワイヤ Download PDF

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Publication number
WO2009072525A1
WO2009072525A1 PCT/JP2008/071969 JP2008071969W WO2009072525A1 WO 2009072525 A1 WO2009072525 A1 WO 2009072525A1 JP 2008071969 W JP2008071969 W JP 2008071969W WO 2009072525 A1 WO2009072525 A1 WO 2009072525A1
Authority
WO
WIPO (PCT)
Prior art keywords
bonding wire
loop
core
semiconductor devices
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/071969
Other languages
English (en)
French (fr)
Inventor
Tomohiro Uno
Keiichi Kimura
Takashi Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Micrometal Corp
Nippon Steel Chemical and Materials Co Ltd
Original Assignee
Nippon Steel Materials Co Ltd
Nippon Micrometal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Materials Co Ltd, Nippon Micrometal Corp filed Critical Nippon Steel Materials Co Ltd
Priority to JP2009544692A priority Critical patent/JP5073759B2/ja
Priority to KR1020097026397A priority patent/KR101055957B1/ko
Priority to US12/669,612 priority patent/US8389860B2/en
Priority to CN2008801120319A priority patent/CN101828255B/zh
Publication of WO2009072525A1 publication Critical patent/WO2009072525A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/01—Alloys based on copper with aluminium as the next major constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4557—Plural coating layers
    • H01L2224/45572—Two-layer stack coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45683—Rhenium (Re) as principal constituent
    • H10W72/015—
    • H10W72/01515—
    • H10W72/01551—
    • H10W72/01565—
    • H10W72/075—
    • H10W72/07511—
    • H10W72/07521—
    • H10W72/07532—
    • H10W72/07533—
    • H10W72/07541—
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    • H10W72/521—
    • H10W72/522—
    • H10W72/523—
    • H10W72/536—
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    • H10W72/952—
    • H10W74/00—
    • H10W90/756—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)
  • Powder Metallurgy (AREA)

Abstract

本発明は、ネック部の損傷を低減でき、また、ループの直線性、ループ高さの安定性、ボンディングワイヤの接合形状の安定化に優れている、低ループ化、細線化、狭ピッチ化、三次元実装等の半導体実装技術にも適応する、高機能のボンディングワイヤを提供することを目的とする。 導電性金属からなる芯材と、該芯材の上に芯材とは異なる面心立方晶の金属を主成分とする表皮層を有するボンディングワイヤであって、前記表皮層の表面における長手方向の結晶方位の内&<100>の占める割合が50%以上であることを特徴とする半導体装置用ボンディングワイヤである。
PCT/JP2008/071969 2007-12-03 2008-12-03 半導体装置用ボンディングワイヤ Ceased WO2009072525A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009544692A JP5073759B2 (ja) 2007-12-03 2008-12-03 半導体装置用ボンディングワイヤ
KR1020097026397A KR101055957B1 (ko) 2007-12-03 2008-12-03 반도체 장치용 본딩 와이어
US12/669,612 US8389860B2 (en) 2007-12-03 2008-12-03 Bonding wire for semiconductor devices
CN2008801120319A CN101828255B (zh) 2007-12-03 2008-12-03 半导体装置用接合线

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007312239 2007-12-03
JP2007-312239 2007-12-03

Publications (1)

Publication Number Publication Date
WO2009072525A1 true WO2009072525A1 (ja) 2009-06-11

Family

ID=40717704

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071969 Ceased WO2009072525A1 (ja) 2007-12-03 2008-12-03 半導体装置用ボンディングワイヤ

Country Status (5)

Country Link
US (1) US8389860B2 (ja)
JP (1) JP5073759B2 (ja)
KR (1) KR101055957B1 (ja)
CN (1) CN101828255B (ja)
WO (1) WO2009072525A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010150814A1 (ja) * 2009-06-24 2010-12-29 新日鉄マテリアルズ株式会社 半導体用銅合金ボンディングワイヤ
JP2011033600A (ja) * 2009-08-06 2011-02-17 Kobe Steel Ltd 鋼板成形品の耐遅れ破壊性の評価方法
JP5985127B1 (ja) * 2015-06-15 2016-09-06 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
WO2016203899A1 (ja) * 2015-06-15 2016-12-22 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
JP2016225610A (ja) * 2015-05-26 2016-12-28 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
JP2017005256A (ja) * 2015-06-15 2017-01-05 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
JP2017045924A (ja) * 2015-08-28 2017-03-02 田中電子工業株式会社 銅合金ボンディングワイヤ
US10468370B2 (en) 2015-07-23 2019-11-05 Nippon Micrometal Corporation Bonding wire for semiconductor device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY147804A (en) 2007-07-24 2013-01-21 Nippon Steel & Sumikin Mat Co Bonding wire for semiconductor device
US8742258B2 (en) * 2009-07-30 2014-06-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor
JP5325201B2 (ja) * 2010-12-27 2013-10-23 田中貴金属工業株式会社 イリジウム含有合金からなる金属線材
US8692118B2 (en) * 2011-06-24 2014-04-08 Tessera, Inc. Reliable wire structure and method
DE102013000057B4 (de) * 2012-01-02 2016-11-24 Wire Technology Co., Ltd. Legierungsdraht und verfahren zur herstellung desselben
US20130319726A1 (en) * 2012-05-30 2013-12-05 Freescale Semiconductor, Inc Multi-core wire
EP2703116B1 (en) * 2012-09-04 2017-03-22 Heraeus Deutschland GmbH & Co. KG Method for manufacturing a silver alloy wire for bonding applications
US20160078980A1 (en) * 2013-05-03 2016-03-17 Heraeus Materials Singapore Pte., Ltd. Copper bond wire and method of making the same
US9773612B2 (en) 2013-10-30 2017-09-26 The Board Of Trustees Of The Leland Stanford Junior University Integrated magnetic devices with multi-axial magnetic anisotropy
JP6254841B2 (ja) * 2013-12-17 2017-12-27 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
MY162021A (en) * 2014-03-31 2017-05-31 Nippon Micrometal Corp Bonding wire for semiconductor device use and method of production of same
WO2015152191A1 (ja) * 2014-03-31 2015-10-08 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ及びその製造方法
SG11201601519YA (en) * 2014-07-10 2016-04-28 Nippon Steel & Sumikin Mat Co Bonding wire for semiconductor device
JP6467281B2 (ja) * 2015-04-30 2019-02-13 日鉄マイクロメタル株式会社 ボンディングワイヤのボール形成方法
TWI550639B (zh) * 2015-05-26 2016-09-21 日鐵住金新材料股份有限公司 Connecting wires for semiconductor devices
EP3147938B1 (en) * 2015-07-23 2024-06-12 Nippon Micrometal Corporation Bonding wire for semiconductor device
SG10201508104TA (en) * 2015-09-29 2017-04-27 Heraeus Materials Singapore Pte Ltd Alloyed silver wire
CN112513284A (zh) 2018-04-18 2021-03-16 美题隆公司 生物传感器用电极

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948948A (ja) * 1982-08-14 1984-03-21 デメトロン・ゲゼルシヤフト・フユ−ル・エレクトロニク−ヴエルクシユトツフエ・ミツト・ベシユレンクテル・ハフツング 半導体構造素子中の半導体結晶と接続部位とをボンデイングするための金又は金合金線材
WO2002023618A1 (en) * 2000-09-18 2002-03-21 Nippon Steel Corporation Bonding wire for semiconductor and method of manufacturing the bonding wire
JP2004031469A (ja) * 2002-06-24 2004-01-29 Nippon Steel Corp 半導体装置用金ボンディングワイヤ及びその製造方法
JP2004228541A (ja) * 2002-04-05 2004-08-12 Nippon Steel Corp 半導体装置用金ボンディングワイヤおよびその製造法
JP2006190763A (ja) * 2005-01-05 2006-07-20 Nippon Steel Corp 半導体装置用ボンディングワイヤ
JP2006216929A (ja) * 2005-01-05 2006-08-17 Nippon Steel Corp 半導体装置用ボンディングワイヤ
JP2007012776A (ja) * 2005-06-29 2007-01-18 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
JP2007123597A (ja) * 2005-10-28 2007-05-17 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6297360A (ja) 1985-10-24 1987-05-06 Mitsubishi Metal Corp 半導体装置のボンデイングワイヤ用表面被覆高純度銅極細線
JP2813434B2 (ja) 1990-07-20 1998-10-22 田中電子工業株式会社 半導体素子用ボンディング線
JPH0479236A (ja) 1990-07-20 1992-03-12 Tanaka Denshi Kogyo Kk 半導体素子用ボンディング線
JPH0479240A (ja) 1990-07-20 1992-03-12 Tanaka Denshi Kogyo Kk 半導体素子用ボンディング線
JP3567003B2 (ja) * 1994-12-19 2004-09-15 株式会社日立製作所 タリウム系超電導線
JP3481392B2 (ja) * 1996-06-13 2003-12-22 古河電気工業株式会社 電子部品リード部材及びその製造方法
US6337307B1 (en) * 1998-07-30 2002-01-08 Sumitomo Electric Industries, Ltd. Oxide superconducting conductor with intermediate layer having aligned crystal orientation
JP2004064033A (ja) 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー
US7390370B2 (en) * 2002-04-05 2008-06-24 Nippon Steel Corporation Gold bonding wires for semiconductor devices and method of producing the wires

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948948A (ja) * 1982-08-14 1984-03-21 デメトロン・ゲゼルシヤフト・フユ−ル・エレクトロニク−ヴエルクシユトツフエ・ミツト・ベシユレンクテル・ハフツング 半導体構造素子中の半導体結晶と接続部位とをボンデイングするための金又は金合金線材
WO2002023618A1 (en) * 2000-09-18 2002-03-21 Nippon Steel Corporation Bonding wire for semiconductor and method of manufacturing the bonding wire
JP2004228541A (ja) * 2002-04-05 2004-08-12 Nippon Steel Corp 半導体装置用金ボンディングワイヤおよびその製造法
JP2004031469A (ja) * 2002-06-24 2004-01-29 Nippon Steel Corp 半導体装置用金ボンディングワイヤ及びその製造方法
JP2006190763A (ja) * 2005-01-05 2006-07-20 Nippon Steel Corp 半導体装置用ボンディングワイヤ
JP2006216929A (ja) * 2005-01-05 2006-08-17 Nippon Steel Corp 半導体装置用ボンディングワイヤ
JP2007012776A (ja) * 2005-06-29 2007-01-18 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
JP2007123597A (ja) * 2005-10-28 2007-05-17 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010150814A1 (ja) * 2009-06-24 2010-12-29 新日鉄マテリアルズ株式会社 半導体用銅合金ボンディングワイヤ
JP4866490B2 (ja) * 2009-06-24 2012-02-01 新日鉄マテリアルズ株式会社 半導体用銅合金ボンディングワイヤ
KR20120031005A (ko) * 2009-06-24 2012-03-29 신닛테츠 마테리알즈 가부시키가이샤 반도체용 구리 합금 본딩 와이어
JP2012074706A (ja) * 2009-06-24 2012-04-12 Nippon Steel Materials Co Ltd 半導体用銅合金ボンディングワイヤ
JP2012084878A (ja) * 2009-06-24 2012-04-26 Nippon Steel Materials Co Ltd 半導体用銅合金ボンディングワイヤ
CN102459668A (zh) * 2009-06-24 2012-05-16 新日铁高新材料株式会社 半导体用铜合金接合线
EP2447380A4 (en) * 2009-06-24 2012-12-05 Nippon Steel Materials Co Ltd CONNECTING WIRE FROM A COPPER ALLOY FOR SEMICONDUCTORS
US9427830B2 (en) 2009-06-24 2016-08-30 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor
KR101704839B1 (ko) 2009-06-24 2017-02-08 신닛테츠스미킹 마테리알즈 가부시키가이샤 반도체용 구리 합금 본딩 와이어
CN106119595A (zh) * 2009-06-24 2016-11-16 新日铁住金高新材料株式会社 半导体用铜合金接合线
JP2011033600A (ja) * 2009-08-06 2011-02-17 Kobe Steel Ltd 鋼板成形品の耐遅れ破壊性の評価方法
JP2016225610A (ja) * 2015-05-26 2016-12-28 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
US10672733B2 (en) 2015-05-26 2020-06-02 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device
US10236272B2 (en) 2015-05-26 2019-03-19 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device
US10497663B2 (en) 2015-05-26 2019-12-03 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device
JP2017005256A (ja) * 2015-06-15 2017-01-05 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
JP5985127B1 (ja) * 2015-06-15 2016-09-06 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
US10737356B2 (en) 2015-06-15 2020-08-11 Nippon Micrometal Corporation Bonding wire for semiconductor device
CN107962313A (zh) * 2015-06-15 2018-04-27 日铁住金新材料股份有限公司 半导体装置用接合线
JP2018078297A (ja) * 2015-06-15 2018-05-17 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
US10137534B2 (en) 2015-06-15 2018-11-27 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10414002B2 (en) 2015-06-15 2019-09-17 Nippon Micrometal Corporation Bonding wire for semiconductor device
WO2016203899A1 (ja) * 2015-06-15 2016-12-22 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
US10610976B2 (en) 2015-06-15 2020-04-07 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10468370B2 (en) 2015-07-23 2019-11-05 Nippon Micrometal Corporation Bonding wire for semiconductor device
JP2017045924A (ja) * 2015-08-28 2017-03-02 田中電子工業株式会社 銅合金ボンディングワイヤ

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JP5073759B2 (ja) 2012-11-14
CN101828255B (zh) 2011-11-09
KR20100013329A (ko) 2010-02-09
US8389860B2 (en) 2013-03-05
KR101055957B1 (ko) 2011-08-09
JPWO2009072525A1 (ja) 2011-04-28
US20110011619A1 (en) 2011-01-20

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