[go: up one dir, main page]

WO2009072498A1 - 半導体装置用ボンディングワイヤ - Google Patents

半導体装置用ボンディングワイヤ Download PDF

Info

Publication number
WO2009072498A1
WO2009072498A1 PCT/JP2008/071899 JP2008071899W WO2009072498A1 WO 2009072498 A1 WO2009072498 A1 WO 2009072498A1 JP 2008071899 W JP2008071899 W JP 2008071899W WO 2009072498 A1 WO2009072498 A1 WO 2009072498A1
Authority
WO
WIPO (PCT)
Prior art keywords
bonding wire
wire
core
semiconductor devices
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/071899
Other languages
English (en)
French (fr)
Inventor
Tomohiro Uno
Keiichi Kimura
Takashi Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Micrometal Corp
Nippon Steel Chemical and Materials Co Ltd
Original Assignee
Nippon Steel Materials Co Ltd
Nippon Micrometal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40717676&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2009072498(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nippon Steel Materials Co Ltd, Nippon Micrometal Corp filed Critical Nippon Steel Materials Co Ltd
Priority to KR1020107024696A priority Critical patent/KR101383401B1/ko
Priority to CN200880024022.4A priority patent/CN101689519B/zh
Priority to US12/669,662 priority patent/US8299356B2/en
Priority to KR1020117017997A priority patent/KR101100564B1/ko
Priority to EP08858289.5A priority patent/EP2200076B1/en
Priority to TW097146887A priority patent/TWI533381B/zh
Priority to TW100127912A priority patent/TW201207971A/zh
Publication of WO2009072498A1 publication Critical patent/WO2009072498A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/02Alloys based on gold
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/30Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/30Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006Ag as the principal constituent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/30Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013Au as the principal constituent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/30Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302Cu as the principal constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/04Alloys based on a platinum group metal
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/06Alloys based on silver
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • H10W72/01515
    • H10W72/01551
    • H10W72/01565
    • H10W72/07141
    • H10W72/075
    • H10W72/07502
    • H10W72/07511
    • H10W72/07531
    • H10W72/07533
    • H10W72/07541
    • H10W72/07552
    • H10W72/07555
    • H10W72/521
    • H10W72/522
    • H10W72/523
    • H10W72/551
    • H10W72/552
    • H10W72/5522
    • H10W72/5525
    • H10W72/555
    • H10W72/59
    • H10W72/952
    • H10W74/00
    • H10W90/754
    • H10W90/756

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)

Abstract

本発明は、ワイヤの表面性状、ループの直線性、ループ高さの安定性、ワイヤの接合形状の安定化に優れている、細線化、狭ピッチ化、ロングスパン化、三次元実装等の半導体実装技術にも適応する、高機能のボンディングワイヤを提供することを目的とする。 導電性金属からなる芯材と、該芯材の上に芯材とは異なる面心立方晶の金属を主成分とする表皮層を有する半導体装置用ボンディングワイヤであって、前記表皮層の表面における長手方向の結晶方位のうち&<100>の占める割合が50%以上であることを特徴とする半導体装置用ボンディングワイヤである。
PCT/JP2008/071899 2007-12-03 2008-12-02 半導体装置用ボンディングワイヤ Ceased WO2009072498A1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020107024696A KR101383401B1 (ko) 2007-12-03 2008-12-02 반도체 장치용 본딩 와이어
CN200880024022.4A CN101689519B (zh) 2007-12-03 2008-12-02 半导体装置用接合引线
US12/669,662 US8299356B2 (en) 2007-12-03 2008-12-02 Bonding wire for semiconductor devices
KR1020117017997A KR101100564B1 (ko) 2007-12-03 2008-12-02 반도체 장치용 본딩 와이어
EP08858289.5A EP2200076B1 (en) 2007-12-03 2008-12-02 Bonding wire for semiconductor devices
TW097146887A TWI533381B (zh) 2007-12-03 2008-12-03 Connection of semiconductor devices
TW100127912A TW201207971A (en) 2007-12-03 2008-12-03 Bonding wire for semiconductor devices

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-312238 2007-12-03
JP2007312238 2007-12-03
JP2008295178A JP4617375B2 (ja) 2007-12-03 2008-11-19 半導体装置用ボンディングワイヤ
JP2008-295178 2008-11-19

Publications (1)

Publication Number Publication Date
WO2009072498A1 true WO2009072498A1 (ja) 2009-06-11

Family

ID=40717676

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071899 Ceased WO2009072498A1 (ja) 2007-12-03 2008-12-02 半導体装置用ボンディングワイヤ

Country Status (8)

Country Link
US (1) US8299356B2 (ja)
EP (1) EP2200076B1 (ja)
JP (1) JP4617375B2 (ja)
KR (3) KR101030384B1 (ja)
CN (1) CN101689519B (ja)
MY (1) MY159518A (ja)
TW (2) TW201207971A (ja)
WO (1) WO2009072498A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011033600A (ja) * 2009-08-06 2011-02-17 Kobe Steel Ltd 鋼板成形品の耐遅れ破壊性の評価方法
EP2447380A4 (en) * 2009-06-24 2012-12-05 Nippon Steel Materials Co Ltd CONNECTING WIRE FROM A COPPER ALLOY FOR SEMICONDUCTORS

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5222339B2 (ja) * 2007-12-03 2013-06-26 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
MY147995A (en) 2008-01-25 2013-02-28 Nippon Steel & Sumikin Mat Co Bonding wire semiconductor device
CN105023902B (zh) * 2009-07-30 2018-01-30 新日铁住金高新材料株式会社 半导体用接合线
WO2011129256A1 (ja) * 2010-04-14 2011-10-20 タツタ電線株式会社 ボンディングワイヤ
JP5393614B2 (ja) * 2010-08-03 2014-01-22 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
KR101426791B1 (ko) * 2011-07-19 2014-08-05 삼성전자주식회사 입력 제스처를 감지하여 선택받은 기호를 입력하는 전자 장치 및 방법
KR101251011B1 (ko) * 2011-08-23 2013-04-05 엠케이전자 주식회사 구리계 본딩 와이어 및 이를 포함하는 반도체 패키지
JP5786042B2 (ja) * 2012-01-25 2015-09-30 日鉄住金マイクロメタル株式会社 ボンディングワイヤ及びその製造方法
KR101366688B1 (ko) * 2012-04-30 2014-02-25 엠케이전자 주식회사 구리계 본딩 와이어 및 이를 포함하는 반도체 패키지
KR101503462B1 (ko) * 2012-09-05 2015-03-18 엠케이전자 주식회사 반도체 장치용 본딩 와이어 및 그의 제조 방법
CN105518165B (zh) * 2013-09-06 2017-08-18 古河电气工业株式会社 铜合金线材及其制造方法
MY162021A (en) * 2014-03-31 2017-05-31 Nippon Micrometal Corp Bonding wire for semiconductor device use and method of production of same
SG11201509513SA (en) * 2014-03-31 2015-12-30 Nippon Micrometal Corp Bonding wire for semiconductor device use and method of production of same
WO2015163297A1 (ja) 2014-04-21 2015-10-29 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
US10032741B2 (en) 2015-02-26 2018-07-24 Nippon Micrometal Corporation Bonding wire for semiconductor device
WO2016203659A1 (ja) 2015-06-15 2016-12-22 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
US10468370B2 (en) 2015-07-23 2019-11-05 Nippon Micrometal Corporation Bonding wire for semiconductor device
MY162884A (en) * 2015-08-12 2017-07-20 Nippon Micrometal Corp Bonding wire for semiconductor device
JP6410692B2 (ja) * 2015-08-28 2018-10-24 田中電子工業株式会社 銅合金ボンディングワイヤ
JP6354744B2 (ja) 2015-12-21 2018-07-11 トヨタ自動車株式会社 銅線の接合方法
KR102167481B1 (ko) * 2017-08-09 2020-10-19 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 반도체 장치용 Cu 합금 본딩 와이어
US10991672B2 (en) * 2017-08-09 2021-04-27 Nippon Steel Chemical & Material Co., Ltd. Cu alloy bonding wire for semiconductor device
CN111886685B (zh) * 2018-09-21 2021-10-08 日铁化学材料株式会社 半导体装置用Cu合金接合线
PH12021552178A1 (en) * 2019-03-12 2022-08-08 Tanaka Electronics Ind Palladium-coated copper bonding wire, manufacturing method of palladium-coated copper bonding wire, wire bonding structure using the same, semiconductor device and manufacturing method thereof
EP3940757A4 (en) * 2019-03-13 2023-06-21 Nippon Micrometal Corporation ALUMINUM CONNECTING WIRE
WO2020184654A1 (ja) * 2019-03-13 2020-09-17 日鉄マイクロメタル株式会社 ボンディングワイヤ
JP7236953B2 (ja) * 2019-08-05 2023-03-10 東京エレクトロン株式会社 成膜装置および成膜方法
CN114686719B (zh) * 2022-03-28 2023-04-28 重庆材料研究院有限公司 一种高强度金丝材料及制备方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948948A (ja) * 1982-08-14 1984-03-21 デメトロン・ゲゼルシヤフト・フユ−ル・エレクトロニク−ヴエルクシユトツフエ・ミツト・ベシユレンクテル・ハフツング 半導体構造素子中の半導体結晶と接続部位とをボンデイングするための金又は金合金線材
WO2002023618A1 (en) * 2000-09-18 2002-03-21 Nippon Steel Corporation Bonding wire for semiconductor and method of manufacturing the bonding wire
JP2004031469A (ja) * 2002-06-24 2004-01-29 Nippon Steel Corp 半導体装置用金ボンディングワイヤ及びその製造方法
JP2004064033A (ja) 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー
JP2004228541A (ja) * 2002-04-05 2004-08-12 Nippon Steel Corp 半導体装置用金ボンディングワイヤおよびその製造法
JP2006190763A (ja) * 2005-01-05 2006-07-20 Nippon Steel Corp 半導体装置用ボンディングワイヤ
JP2006216929A (ja) * 2005-01-05 2006-08-17 Nippon Steel Corp 半導体装置用ボンディングワイヤ
JP2007012776A (ja) 2005-06-29 2007-01-18 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
JP2007123597A (ja) * 2005-10-28 2007-05-17 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6297360A (ja) 1985-10-24 1987-05-06 Mitsubishi Metal Corp 半導体装置のボンデイングワイヤ用表面被覆高純度銅極細線
JP2813434B2 (ja) 1990-07-20 1998-10-22 田中電子工業株式会社 半導体素子用ボンディング線
JPH0479240A (ja) 1990-07-20 1992-03-12 Tanaka Denshi Kogyo Kk 半導体素子用ボンディング線
US5364706A (en) * 1990-07-20 1994-11-15 Tanaka Denshi Kogyo Kabushiki Kaisha Clad bonding wire for semiconductor device
JPH0479236A (ja) 1990-07-20 1992-03-12 Tanaka Denshi Kogyo Kk 半導体素子用ボンディング線
JP3481392B2 (ja) * 1996-06-13 2003-12-22 古河電気工業株式会社 電子部品リード部材及びその製造方法
JP3640925B2 (ja) * 1999-10-16 2005-04-20 シーエム・エレクトロン・カンパニー・リミテッド 半導体用回路線とその製造及び成形方法
JP3494175B2 (ja) * 2001-02-19 2004-02-03 住友金属鉱山株式会社 ボンディングワイヤ及びその製造方法
TW200414453A (en) 2002-03-26 2004-08-01 Sumitomo Electric Wintec Inc Bonding wire and IC device using the bonding wire
US7390370B2 (en) * 2002-04-05 2008-06-24 Nippon Steel Corporation Gold bonding wires for semiconductor devices and method of producing the wires
JP2004014884A (ja) * 2002-06-07 2004-01-15 Sumitomo Electric Wintec Inc ボンディングワイヤー
JP3716391B2 (ja) * 2003-03-18 2005-11-16 株式会社野毛電気工業 バンプ形成用パラジウム被覆ワイヤ
EP1677345A1 (en) 2003-10-20 2006-07-05 Sumitomo Electric Industries, Ltd. Bonding wire and integrated circuit device using the same
JP2005268771A (ja) * 2004-02-20 2005-09-29 Nippon Steel Corp 半導体装置用金ボンディングワイヤ及びその接続方法
JP4158928B2 (ja) * 2004-09-02 2008-10-01 古河電気工業株式会社 ボンディングワイヤー及びその製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948948A (ja) * 1982-08-14 1984-03-21 デメトロン・ゲゼルシヤフト・フユ−ル・エレクトロニク−ヴエルクシユトツフエ・ミツト・ベシユレンクテル・ハフツング 半導体構造素子中の半導体結晶と接続部位とをボンデイングするための金又は金合金線材
WO2002023618A1 (en) * 2000-09-18 2002-03-21 Nippon Steel Corporation Bonding wire for semiconductor and method of manufacturing the bonding wire
JP2004064033A (ja) 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー
JP2004228541A (ja) * 2002-04-05 2004-08-12 Nippon Steel Corp 半導体装置用金ボンディングワイヤおよびその製造法
JP2004031469A (ja) * 2002-06-24 2004-01-29 Nippon Steel Corp 半導体装置用金ボンディングワイヤ及びその製造方法
JP2006190763A (ja) * 2005-01-05 2006-07-20 Nippon Steel Corp 半導体装置用ボンディングワイヤ
JP2006216929A (ja) * 2005-01-05 2006-08-17 Nippon Steel Corp 半導体装置用ボンディングワイヤ
JP2007012776A (ja) 2005-06-29 2007-01-18 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
JP2007123597A (ja) * 2005-10-28 2007-05-17 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2200076A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2447380A4 (en) * 2009-06-24 2012-12-05 Nippon Steel Materials Co Ltd CONNECTING WIRE FROM A COPPER ALLOY FOR SEMICONDUCTORS
US9427830B2 (en) 2009-06-24 2016-08-30 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor
JP2011033600A (ja) * 2009-08-06 2011-02-17 Kobe Steel Ltd 鋼板成形品の耐遅れ破壊性の評価方法

Also Published As

Publication number Publication date
MY159518A (en) 2017-01-13
KR20110098010A (ko) 2011-08-31
US20100294532A1 (en) 2010-11-25
US8299356B2 (en) 2012-10-30
TW201207971A (en) 2012-02-16
TWI533381B (zh) 2016-05-11
KR20100013328A (ko) 2010-02-09
EP2200076B1 (en) 2016-09-28
TW200937546A (en) 2009-09-01
KR20100134719A (ko) 2010-12-23
TWI364806B (ja) 2012-05-21
KR101030384B1 (ko) 2011-04-20
EP2200076A4 (en) 2012-06-06
KR101383401B1 (ko) 2014-04-08
KR101100564B1 (ko) 2011-12-29
CN101689519A (zh) 2010-03-31
CN101689519B (zh) 2015-05-06
EP2200076A1 (en) 2010-06-23
JP4617375B2 (ja) 2011-01-26
JP2009158931A (ja) 2009-07-16

Similar Documents

Publication Publication Date Title
WO2009072498A1 (ja) 半導体装置用ボンディングワイヤ
WO2009072525A1 (ja) 半導体装置用ボンディングワイヤ
EP1703558A3 (en) Wiring board with embedded semiconductor chip, embedded reinforcing member and method of manufacturing the same
JP2007053331A5 (ja)
EP2816589A3 (en) Die substrate with reinforcement structure
SG144126A1 (en) Wafer level package with die receiving through-hole and method of the same
EP3633723A3 (en) Semiconductor device
WO2010008209A3 (ko) 수직구조 반도체 발광소자 제조용 지지기판 및 이를 이용한 수직구조 반도체 발광소자
SG144119A1 (en) Rf module package
EP1519411A3 (en) Semiconductor device and method for fabricating the same
EP1871153A3 (en) Wiring substrate and manufacturing method thereof, and semiconductor apparatus
TW200629446A (en) Flexible wiring substrate, semiconductor device and electronic device using flexible wiring substrate, and fabricating method of flexible wiring substrate
JP2008520111A5 (ja)
WO2009025961A3 (en) Semiconductor component and method of manufacture
EP2325871A3 (en) Semiconductor device and method of manufacturing the same
EP1662566A3 (en) Semiconductor device and method of fabricating the same
TWI566356B (zh) 封裝結構及其製造方法
TW200618285A (en) Methods for forming semiconductor wires and resulting devices
WO2009026509A3 (en) Semiconductor package having buss-less substrate
PH12020500219A1 (en) Cu alloy bonding wire for semiconductor device
SG170803A1 (en) Integrated circuit package system including die having relieved active region
EP1739740A3 (en) Power semiconductor
WO2008123869A3 (en) Millimeter-long nanowires
TW200614474A (en) A manufacturing method of a semiconductor device
DE602005015103D1 (de) Verbindungsstruktur zur Befestigung eines Halbleiterchips auf einem Metallsubstrat, Halbleiterchip und elektronisches Bauelement mit der Verbindungsstruktur, und Verfahren zur Herstellung der Verbindungsstruktur

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880024022.4

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08858289

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20097026296

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12010500365

Country of ref document: PH

WWE Wipo information: entry into national phase

Ref document number: PI 2010000596

Country of ref document: MY

REEP Request for entry into the european phase

Ref document number: 2008858289

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2008858289

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12669662

Country of ref document: US