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WO2009044892A1 - Film électroconducteur transparent à base d'oxyde d'indium et procédé de production du film électroconducteur transparent à base d'oxyde d'indium - Google Patents

Film électroconducteur transparent à base d'oxyde d'indium et procédé de production du film électroconducteur transparent à base d'oxyde d'indium Download PDF

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Publication number
WO2009044892A1
WO2009044892A1 PCT/JP2008/068101 JP2008068101W WO2009044892A1 WO 2009044892 A1 WO2009044892 A1 WO 2009044892A1 JP 2008068101 W JP2008068101 W JP 2008068101W WO 2009044892 A1 WO2009044892 A1 WO 2009044892A1
Authority
WO
WIPO (PCT)
Prior art keywords
indium oxide
transparent electroconductive
electroconductive film
film
based transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/068101
Other languages
English (en)
Japanese (ja)
Inventor
Seiichiro Takahashi
Norihiko Miyashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Kinzoku Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Priority to JP2008550298A priority Critical patent/JPWO2009044892A1/ja
Publication of WO2009044892A1 publication Critical patent/WO2009044892A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Conductive Materials (AREA)

Abstract

L'invention concerne un film électroconducteur transparent à base d'oxyde d'indium et un procédé de production du film électroconducteur transparent à base d'oxyde d'indium. Le film d'oxyde d'indium-oxyde d'étain est utilisé en tant que film électronconducteur transparent, par exemple, dans des dispositifs d'affichage à cristaux liquides. Cependant, un film amorphe ne peut pas être formé à partir du film d'oxyde d'indium-oxyde d'étain sans difficultés. En outre, un film électroconducteur transparent constitué d'oxyde d'indium-oxyde de zinc est connu en tant que film amorphe. Ledit film, cependant, souffre de problèmes tels qu'une faible transparence. Les problèmes susmentionnés peuvent être résolus par un film électroconducteur transparent à base d'oxyde d'indium, formé à l'aide d'une cible de pulvérisation comprenant un aggloméré d'oxyde contenant de l'oxyde d'indium et de l'étain et contenant en outre de l'yttrium, la proportion du rapport molaire de l'étain sur une mole d'indium relativement au rapport molaire X de l'yttrium sur une mole d'indium est supérieure à (-2,5 x 10-2Ln(X) - 5,8 x 10-2) et inférieure à (-1,0 x 10-1Ln(X) - 5,0 x 10-2).
PCT/JP2008/068101 2007-10-03 2008-10-03 Film électroconducteur transparent à base d'oxyde d'indium et procédé de production du film électroconducteur transparent à base d'oxyde d'indium Ceased WO2009044892A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008550298A JPWO2009044892A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007260436 2007-10-03
JP2007-260436 2007-10-03

Publications (1)

Publication Number Publication Date
WO2009044892A1 true WO2009044892A1 (fr) 2009-04-09

Family

ID=40526308

Family Applications (6)

Application Number Title Priority Date Filing Date
PCT/JP2008/068102 Ceased WO2009044893A1 (fr) 2007-10-03 2008-10-03 Film conducteur transparent d'oxyde d'indium et procédé de production
PCT/JP2008/068100 Ceased WO2009044891A1 (fr) 2007-10-03 2008-10-03 Film électronconducteur transparent à base d'oxyde d'indium et procédé de production du film électronconducteur transparent à base d'oxyde d'indium
PCT/JP2008/068099 Ceased WO2009044890A1 (fr) 2007-10-03 2008-10-03 Cible d'oxyde d'indium
PCT/JP2008/068097 Ceased WO2009044888A1 (fr) 2007-10-03 2008-10-03 Cible d'oxyde d'indium
PCT/JP2008/068101 Ceased WO2009044892A1 (fr) 2007-10-03 2008-10-03 Film électroconducteur transparent à base d'oxyde d'indium et procédé de production du film électroconducteur transparent à base d'oxyde d'indium
PCT/JP2008/068098 Ceased WO2009044889A1 (fr) 2007-10-03 2008-10-03 Cible d'oxyde d'indium

Family Applications Before (4)

Application Number Title Priority Date Filing Date
PCT/JP2008/068102 Ceased WO2009044893A1 (fr) 2007-10-03 2008-10-03 Film conducteur transparent d'oxyde d'indium et procédé de production
PCT/JP2008/068100 Ceased WO2009044891A1 (fr) 2007-10-03 2008-10-03 Film électronconducteur transparent à base d'oxyde d'indium et procédé de production du film électronconducteur transparent à base d'oxyde d'indium
PCT/JP2008/068099 Ceased WO2009044890A1 (fr) 2007-10-03 2008-10-03 Cible d'oxyde d'indium
PCT/JP2008/068097 Ceased WO2009044888A1 (fr) 2007-10-03 2008-10-03 Cible d'oxyde d'indium

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068098 Ceased WO2009044889A1 (fr) 2007-10-03 2008-10-03 Cible d'oxyde d'indium

Country Status (4)

Country Link
JP (6) JP5237827B2 (fr)
KR (6) KR20100063137A (fr)
TW (6) TWI430956B (fr)
WO (6) WO2009044893A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013139380A (ja) * 2011-12-07 2013-07-18 Tosoh Corp 複合酸化物焼結体及び酸化物透明導電膜

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JP2011037679A (ja) * 2009-08-13 2011-02-24 Tosoh Corp 複合酸化物焼結体、スパッタリングターゲット、複合酸化物非晶質膜及びその製造方法、並びに、複合酸化物結晶質膜及びその製造方法
KR20170005149A (ko) * 2009-11-19 2017-01-11 가부시키가이샤 아루박 투명 도전막의 제조 방법, 스퍼터링 장치 및 스퍼터링 타겟
CN102191465A (zh) * 2010-03-18 2011-09-21 中国科学院福建物质结构研究所 一种铟掺杂氧化锌靶材及透明导电膜的制备方法
KR101198786B1 (ko) 2010-06-30 2012-11-07 현대자동차주식회사 가변 압축비 장치
JP5367660B2 (ja) * 2010-08-31 2013-12-11 Ｊｘ日鉱日石金属株式会社 酸化物焼結体及び酸化物半導体薄膜
JP5367659B2 (ja) * 2010-08-31 2013-12-11 Ｊｘ日鉱日石金属株式会社 酸化物焼結体及び酸化物半導体薄膜
JP5817327B2 (ja) 2010-09-29 2015-11-18 東ソー株式会社 酸化物焼結体、その製造方法、それを用いて得られる酸化物透明導電膜及び太陽電池
US8932518B2 (en) 2012-02-29 2015-01-13 General Electric Company Mold and facecoat compositions
JP5996227B2 (ja) * 2012-03-26 2016-09-21 学校法人 龍谷大学 酸化物膜及びその製造方法
US9511417B2 (en) 2013-11-26 2016-12-06 General Electric Company Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys
WO2025159034A1 (fr) * 2024-01-25 2025-07-31 ソニーグループ株式会社 Film hydrophile, film antireflet, caméra et procédé de formation de film

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JPH0570942A (ja) * 1991-09-11 1993-03-23 Mitsubishi Materials Corp スパツタリングによる透明導電性薄膜形成用高密度焼結ターゲツト材
WO1994018138A1 (fr) * 1993-02-11 1994-08-18 Vesuvius Crucible Company, Inc. Procede de fabrication d'un corps fritte a l'oxyde d'indium/oxyde d'etain et element produit a partir de ce corps
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013139380A (ja) * 2011-12-07 2013-07-18 Tosoh Corp 複合酸化物焼結体及び酸化物透明導電膜

Also Published As

Publication number Publication date
TWI461365B (zh) 2014-11-21
KR20100071089A (ko) 2010-06-28
JPWO2009044888A1 (ja) 2011-02-10
TWI430956B (zh) 2014-03-21
WO2009044888A1 (fr) 2009-04-09
JPWO2009044890A1 (ja) 2011-02-10
TW200927658A (en) 2009-07-01
JPWO2009044889A1 (ja) 2011-02-10
KR101200386B1 (ko) 2012-11-12
KR20100063135A (ko) 2010-06-10
KR20100063136A (ko) 2010-06-10
JPWO2009044893A1 (ja) 2011-02-10
JP5464319B2 (ja) 2014-04-09
JPWO2009044892A1 (ja) 2011-02-10
JPWO2009044891A1 (ja) 2011-02-10
WO2009044889A1 (fr) 2009-04-09
TW200926207A (en) 2009-06-16
TW200927657A (en) 2009-07-01
JP5237827B2 (ja) 2013-07-17
TW200923115A (en) 2009-06-01
WO2009044893A1 (fr) 2009-04-09
KR20100071090A (ko) 2010-06-28
WO2009044891A1 (fr) 2009-04-09
KR20100063137A (ko) 2010-06-10
KR20100067118A (ko) 2010-06-18
TW200926209A (en) 2009-06-16
TW200926208A (en) 2009-06-16
WO2009044890A1 (fr) 2009-04-09

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