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WO2009041254A1 - 有機薄膜トランジスタ - Google Patents

有機薄膜トランジスタ Download PDF

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Publication number
WO2009041254A1
WO2009041254A1 PCT/JP2008/066248 JP2008066248W WO2009041254A1 WO 2009041254 A1 WO2009041254 A1 WO 2009041254A1 JP 2008066248 W JP2008066248 W JP 2008066248W WO 2009041254 A1 WO2009041254 A1 WO 2009041254A1
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WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
organic thin
organic
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/066248
Other languages
English (en)
French (fr)
Inventor
Hiroaki Nakamura
Yuki Nakano
Masatoshi Saito
Hirofumi Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007249132A external-priority patent/JP2009081265A/ja
Priority claimed from JP2008196278A external-priority patent/JP5180723B2/ja
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to US12/679,634 priority Critical patent/US8525156B2/en
Priority to EP08833663A priority patent/EP2194582A4/en
Priority to CN200880108574A priority patent/CN101809749A/zh
Publication of WO2009041254A1 publication Critical patent/WO2009041254A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
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    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G2261/10—Definition of the polymer structure
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    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
    • C08G2261/316—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain bridged by heteroatoms, e.g. N, P, Si or B
    • C08G2261/3162—Arylamines
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/70—Post-treatment
    • C08G2261/76—Post-treatment crosslinking
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/90—Applications
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    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)

Abstract

　少なくとも基板上にゲート電極、ソース電極及びドレイン電極の３端子、絶縁体層並びに有機半導体層が設けられ、ソース－ドレイン間電流をゲート電極に電圧を印加することによって制御する有機薄膜トランジスタであって、有機半導体層と絶縁体層の間に、イオン化ポテンシャルが５．８ｅＶ未満である非晶質有機化合物を含むチャネル制御層を有する有機薄膜トランジスタは、高温保存した場合でも電界効果移動度の安定性に優れ、かつ応答速度が大きい。
PCT/JP2008/066248 2007-09-26 2008-09-09 有機薄膜トランジスタ Ceased WO2009041254A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/679,634 US8525156B2 (en) 2007-09-26 2008-09-09 Organic thin film transistor having an amorphous channel control layer with specified inozation potential
EP08833663A EP2194582A4 (en) 2007-09-26 2008-09-09 ORGANIC THIN-LAYER TRANSISTOR
CN200880108574A CN101809749A (zh) 2007-09-26 2008-09-09 有机薄膜晶体管

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007249132A JP2009081265A (ja) 2007-09-26 2007-09-26 有機薄膜トランジスタ
JP2007-249132 2007-09-26
JP2008196278A JP5180723B2 (ja) 2008-07-30 2008-07-30 有機薄膜トランジスタ
JP2008-196278 2008-07-30

Publications (1)

Publication Number Publication Date
WO2009041254A1 true WO2009041254A1 (ja) 2009-04-02

Family

ID=40511143

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066248 Ceased WO2009041254A1 (ja) 2007-09-26 2008-09-09 有機薄膜トランジスタ

Country Status (6)

Country Link
US (1) US8525156B2 (ja)
EP (1) EP2194582A4 (ja)
KR (1) KR20100057074A (ja)
CN (1) CN101809749A (ja)
TW (1) TW200933944A (ja)
WO (1) WO2009041254A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8525156B2 (en) 2007-09-26 2013-09-03 Idemitsu Kosan Co., Ltd. Organic thin film transistor having an amorphous channel control layer with specified inozation potential
JP2013536570A (ja) * 2010-07-02 2013-09-19 プレックストロニクス インコーポレーティッド 正孔輸送組成物ならびに関連するデバイスおよび方法（ｉ）
CN104183761A (zh) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 倒置有机电致发光器件及其制备方法
US20230024193A1 (en) * 2020-02-26 2023-01-26 The University Of Tokyo Transistor-type sensor

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JP5309532B2 (ja) * 2007-11-08 2013-10-09 サンケン電気株式会社 窒化物系化合物半導体装置
GB2456298A (en) 2008-01-07 2009-07-15 Anthony Ian Newman Electroluminescent materials comprising oxidation resistant fluorenes
CN102329414B (zh) * 2010-07-12 2012-10-10 海洋王照明科技股份有限公司 含环戊二烯二噻吩-萘四羧酸二酰亚胺共轭聚合物及其制备方法和应用
DE102010031979B4 (de) * 2010-07-22 2014-10-30 Novaled Ag Halbleiterbauelement, Verfahren zu dessen Herstellung, Verwendung des Halbleiterbauelementes und Inverter mit zwei Halbleiterbauelementen
EP2657960A1 (en) * 2010-12-22 2013-10-30 Mitsubishi Chemical Corporation Field-effect transistor, process for producing the same, and electronic device including the same
ITMI20102406A1 (it) * 2010-12-27 2012-06-28 E T C Srl Una piattaforma comprendente un transistor organico ad effetto di campo per applicazioni mediche e biologiche
WO2012090891A1 (ja) * 2010-12-27 2012-07-05 パナソニック株式会社 電界効果トランジスタおよびその製造方法
KR102008034B1 (ko) * 2011-07-11 2019-08-06 메르크 파텐트 게엠베하 유기 전계발광 소자용 화합물
WO2013149678A1 (en) 2012-04-05 2013-10-10 Novaled Ag Organic field effect transistor and method for producing the same
GB201208115D0 (en) * 2012-05-09 2012-06-20 Lomox Ltd Oilgomeric organic light emitting diode (OLED) materrials containing multiple crosslinking functions
US9082983B1 (en) * 2012-05-16 2015-07-14 The United States Of America As Represented By The Secretary Of The Navy Solution processable thin-film transistors
TWI493765B (zh) * 2012-08-07 2015-07-21 E Ink Holdings Inc 有機半導體元件及其製作方法
WO2014102625A1 (en) * 2012-12-24 2014-07-03 Indian Institute Of Technology Kanpur Thin film transistor with a current-induced channel
CN105051906B (zh) * 2013-03-15 2018-12-07 应用材料公司 用于tft的金属氧化物半导体的缓冲层
EP2790238B1 (en) 2013-04-10 2018-08-22 Novaled GmbH Organic field effect transistor and method for production
US9472396B2 (en) * 2014-04-15 2016-10-18 University Of Central Florida Research Foundation, Inc. Plasma treated semiconductor dichalcogenide materials and devices therefrom
GB201411621D0 (en) * 2014-06-30 2014-08-13 Cambridge Display Tech Ltd Organic transistor
TWI560781B (en) * 2014-09-10 2016-12-01 Au Optronics Corp Method for fabricating thin film transistor and apparatus thereof
JP6816101B2 (ja) * 2016-03-01 2021-01-20 パイオニア株式会社 発光装置の製造方法
CN108878650B (zh) * 2017-05-10 2021-12-03 元太科技工业股份有限公司 有机薄膜晶体管
US20220045274A1 (en) * 2020-08-06 2022-02-10 Facebook Technologies Llc Ofets having organic semiconductor layer with high carrier mobility and in situ isolation
KR102540663B1 (ko) * 2021-04-29 2023-06-12 이화여자대학교 산학협력단 병솔 고분자를 포함하는 트랜지스터 게이트절연층용 고분자 박막 및 이를 포함하는 유기전계효과트랜지스터
CN114420844A (zh) * 2022-01-19 2022-04-29 南京邮电大学 聚合物驻极体有机场效应晶体管存储器在生物突触模拟中的应用
CN115207205B (zh) * 2022-07-27 2023-04-25 广东工业大学 一种薄膜振动装置及其制备方法、应用其的清洗装置

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