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WO2009028660A1 - 有機薄膜トランジスタ及び有機薄膜発光トランジスタ - Google Patents

有機薄膜トランジスタ及び有機薄膜発光トランジスタ Download PDF

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Publication number
WO2009028660A1
WO2009028660A1 PCT/JP2008/065525 JP2008065525W WO2009028660A1 WO 2009028660 A1 WO2009028660 A1 WO 2009028660A1 JP 2008065525 W JP2008065525 W JP 2008065525W WO 2009028660 A1 WO2009028660 A1 WO 2009028660A1
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WIPO (PCT)
Prior art keywords
thin film
organic thin
electrode
transistor
film transistor
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Ceased
Application number
PCT/JP2008/065525
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English (en)
French (fr)
Inventor
Ichiro Tanaka
Hideji Osuga
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Idemitsu Kosan Co Ltd
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Idemitsu Kosan Co Ltd
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Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to US12/675,474 priority Critical patent/US8154014B2/en
Priority to CN200880100062A priority patent/CN101790791A/zh
Priority to EP08828445A priority patent/EP2197033A4/en
Publication of WO2009028660A1 publication Critical patent/WO2009028660A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

　本発明は、大気中の安定性に優れ、かつ動作速度が大きい有機薄膜トランジスタの提供を目的とする。 　本発明に係る有機薄膜トランジスタは、基板上に、ゲート電極、ソース電極及びドレイン電極の３端子と、ソース電極及びドレイン電極とゲート電極との間を絶縁する絶縁体層と、有機半導体層とが設けられていて、ゲート電極に印加された電圧によりソース－ドレイン間電流を制御する有機薄膜トランジスタにおいて、有機半導体層の結晶性を制御する結晶性化合物から成膜される結晶性制御層を備え、該結晶性制御層上に、複素環基を有する化合物又はキノン構造を有する化合物を含んでなる有機半導体層が成膜されていることを特徴とする。また、本発明に係る有機薄膜発光トランジスタは、前記有機薄膜トランジスタのソース電極とドレイン電極のうち、いずれか一方が正孔注入性電極で構成され、残りの電極が電子注入性電極で構成されたことを特徴とする。
PCT/JP2008/065525 2007-08-30 2008-08-29 有機薄膜トランジスタ及び有機薄膜発光トランジスタ Ceased WO2009028660A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/675,474 US8154014B2 (en) 2007-08-30 2008-08-29 Organic thin film transistor and organic thin film light-emitting transistor
CN200880100062A CN101790791A (zh) 2007-08-30 2008-08-29 有机薄膜晶体管及有机薄膜发光晶体管
EP08828445A EP2197033A4 (en) 2007-08-30 2008-08-29 ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT TRANSISTOR

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007223575A JP5148211B2 (ja) 2007-08-30 2007-08-30 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
JP2007-223575 2007-08-30

Publications (1)

Publication Number Publication Date
WO2009028660A1 true WO2009028660A1 (ja) 2009-03-05

Family

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PCT/JP2008/065525 Ceased WO2009028660A1 (ja) 2007-08-30 2008-08-29 有機薄膜トランジスタ及び有機薄膜発光トランジスタ

Country Status (7)

Country Link
US (1) US8154014B2 (ja)
EP (1) EP2197033A4 (ja)
JP (1) JP5148211B2 (ja)
KR (1) KR20100066457A (ja)
CN (1) CN101790791A (ja)
TW (1) TW200924199A (ja)
WO (1) WO2009028660A1 (ja)

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CN102329413A (zh) * 2010-07-12 2012-01-25 海洋王照明科技股份有限公司 含苯唑并二噻吩-萘四羧酸二酰亚胺共轭聚合物及其制备方法和应用
US8154014B2 (en) 2007-08-30 2012-04-10 Idemitsu Kosan, Co., Ltd. Organic thin film transistor and organic thin film light-emitting transistor
US20130037843A1 (en) * 2010-02-12 2013-02-14 Takeshi Yamao Light emitting transistor
US8669586B2 (en) 2009-10-22 2014-03-11 Lg Innotek Co., Ltd. Light emitting device, light emitting device package, and lighting system

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CN104241330B (zh) * 2014-09-05 2017-05-03 京东方科技集团股份有限公司 有机发光二极管显示装置及其制作方法
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CN104341605B (zh) 2014-09-26 2017-03-01 京东方科技集团股份有限公司 一种各向异性有机薄膜及其制备方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8154014B2 (en) 2007-08-30 2012-04-10 Idemitsu Kosan, Co., Ltd. Organic thin film transistor and organic thin film light-emitting transistor
US8669586B2 (en) 2009-10-22 2014-03-11 Lg Innotek Co., Ltd. Light emitting device, light emitting device package, and lighting system
US20130037843A1 (en) * 2010-02-12 2013-02-14 Takeshi Yamao Light emitting transistor
CN102329413A (zh) * 2010-07-12 2012-01-25 海洋王照明科技股份有限公司 含苯唑并二噻吩-萘四羧酸二酰亚胺共轭聚合物及其制备方法和应用

Also Published As

Publication number Publication date
TW200924199A (en) 2009-06-01
US8154014B2 (en) 2012-04-10
JP2009059751A (ja) 2009-03-19
EP2197033A1 (en) 2010-06-16
JP5148211B2 (ja) 2013-02-20
CN101790791A (zh) 2010-07-28
EP2197033A4 (en) 2011-12-28
US20100244000A1 (en) 2010-09-30
KR20100066457A (ko) 2010-06-17

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